JPH10289895A - Substrate treating method and device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To effectively remove water and a treatment residue after a water cleaning treatment. SOLUTION: A substrate treatment device 10 is constructed such that a treatment liquid (chemical or deionized water) is overflown from a treatment vessel 14 disposed in a sealed chamber 12 while the treatment liquid is supplied to the treatment vessel 14 and a surface treatment is applied to a wafer W by immersing the wafer W in the treatment liquid in the treatment vessel 14. A plurality of different kinds of treatment are applied to the substrate by supplying different kinds of treatment liquids to the treatment vessel 14 in sequence. The water cleaning treatment with deionized water constitutes the final treatment. When this treatment is finished, while stopping the supply of deionized water, IPA (2-propanol) vapor is supplied to the sealed chamber 12 for a given time so as to form a liquid layer of IPA on the surface of deionized water. While stopping the supply of IPA vapor, the substrate W is taken out from the treatment vessel 14 thus forming an IPA film on the surface of the substrate W.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for treating a substrate such as a semiconductor substrate or a glass substrate for liquid crystal, and more particularly, to a substrate treatment wherein a substrate is immersed in a treatment tank and subjected to a water washing treatment. The present invention relates to a method and an apparatus.

[0002]

2. Description of the Related Art Conventionally, in the production of substrates such as a semiconductor substrate and a liquid crystal glass substrate, a substrate is immersed in a chemical solution or pure water (collectively referred to as a "treatment solution") stored in a treatment tank. A method and an apparatus for subjecting a substrate to a chemical solution treatment or a water washing treatment by sequentially replacing the treatment liquid therein with a different treatment liquid are generally known.

As one type of this type of substrate processing apparatus, for example, there is an apparatus described in Japanese Patent Application Laid-Open No. Hei 7-130699. In this substrate processing apparatus, a processing bath is placed in a closed chamber, and after completion of a water washing process, 2-propanol (isopropyl alcohol: referred to as “IPA”) vapor is blown into the chamber while lifting the substrate from the processing bath. This removes water and processing residues attached to the substrate. According to this apparatus, when the substrate is taken out of the processing tank, the IPA vapor condenses on the substrate surface, and the water attached to the substrate surface evaporates due to the heat of condensation, and the IPA film formed on the substrate surface by condensation Thereby, the wettability of the substrate surface is enhanced, and the processing residue is peeled and removed.

[0004]

However, in the above-mentioned conventional apparatus, IPA vapor is supplied into the closed chamber while the substrate is taken out of the processing tank, so that water and processing residues on the substrate surface are spread over the entire surface of the substrate. It is difficult to remove well.

[0005] That is, in order to remove water and processing residues adhering to the substrate surface, it is important to condense the IPA vapor as uniformly as possible over the entire surface of the substrate. When the IPA vapor is blown into the closed chamber, a flow of the IPA vapor is generated in the closed chamber, and the condensed portion of the IPA vapor is unevenly distributed on the substrate surface due to the influence of the air flow, or the amount of the condensed gas becomes uneven. May be. And, for example, I
If the PA vapor is not partially condensed, or if the amount of the condensed IPA vapor is small, water and processing residues are partially left on the substrate surface, which is dried as it is to lower the quality of the substrate, or It may cause particles to be generated in the process.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a substrate processing method and apparatus capable of satisfactorily removing water and processing residues after a water washing process over the entire substrate surface. I have.

[0007]

In order to solve the above-mentioned problems, a substrate processing method according to the present invention is directed to a substrate processing method in which a substrate is immersed in a processing tank accommodated in a closed chamber to perform a water washing process on the substrate. In the method, while the substrate is immersed in the processing tank storing water, the organic solvent is supplied into the closed chamber, the supply of the organic solvent into the closed chamber is stopped, and the supply of the organic solvent is stopped. In this state, the substrate is lifted from the processing tank (claim 1).

According to this method, after supplying the organic solvent into the closed chamber, the supply of the organic solvent into the closed chamber is stopped and the substrate is pulled up from the processing layer. The substrate is set in an organic solvent atmosphere, and the substrate is pulled up without drying when passing through the gas-liquid interface. As a result, a liquid film of the organic solvent is formed over the entire surface of the substrate, thereby improving the wettability of the substrate. Therefore, water and processing residues adhering to the surface of the substrate, in particular, hydrophobic processing residues that are difficult to be removed by the water washing treatment, are effectively removed.

Further, according to the substrate processing method of the present invention, an organic solvent or an inert gas is supplied into the closed chamber after the substrate is lifted from the processing tank (claim 2).

According to this method, since the organic solvent or the inert gas is supplied to the substrate after the substrate is pulled out of the processing tank, the watermark is reduced and the drying efficiency of the substrate is improved.

Further, in the substrate processing method of the present invention, the pressure in the closed chamber is reduced after lifting the substrate from the processing tank.

According to this method, the substrate is exposed to a reduced pressure after the substrate is lifted from the processing bath, so that the drying efficiency of the substrate is further improved.

Further, the substrate processing apparatus of the present invention has a processing tank for storing water, a closed chamber for accommodating the processing tank,
Organic solvent supply means for supplying an organic solvent into the closed chamber, handling means for lifting the substrate from the processing tank, and an organic solvent supplied to the closed chamber by the organic solvent supply means while the substrate is immersed in the processing tank. After the supply of the solvent, the supply of the organic solvent is stopped, and the control unit is configured to pull up the substrate from the processing tank by the handling unit in a state where the supply of the organic solvent is stopped. ).

[0014] According to this apparatus, after the organic solvent supply means supplies the organic solvent into the closed chamber with the substrate immersed in the processing tank, the supply of the organic solvent is stopped, and the supply of the organic solvent is stopped. In this state, since the handling means lifts the substrate from the processing tank, the inside of the closed chamber is in a state of a low-efficiency organic solvent atmosphere, and the substrate is lifted without drying when passing through the gas-liquid interface. As a result, a liquid film of the organic solvent is formed over the entire surface of the substrate, thereby improving the wettability of the substrate. Therefore, water and processing residues adhering to the surface of the substrate, in particular, hydrophobic processing residues that are difficult to be removed by the water washing treatment, are effectively removed.

Further, in the substrate processing apparatus according to the present invention, the control means causes the organic solvent to be supplied into the closed chamber by the organic solvent supply means after the substrate is lifted from the processing tank. 5).

According to this apparatus, since the organic solvent is supplied to the substrate by the organic solvent supply means after the substrate is pulled out of the processing tank, the water mark is reduced and the drying efficiency of the substrate is improved.

Further, the substrate processing apparatus of the present invention further comprises an inert gas supply means for supplying an inert gas into the closed chamber, wherein the control means removes the substrate from the processing tank after the substrate is lifted from the processing tank. An inert gas is supplied into the closed chamber by an active gas supply means (claim 6).

According to this apparatus, since the inert gas is supplied to the substrate by the inert gas supply means after the substrate is lifted from the processing tank, the water mark is reduced and the drying efficiency of the substrate is improved.

Further, the substrate processing apparatus of the present invention further comprises a decompression means for decompressing the inside of the closed chamber, wherein the control means lifts the substrate from the processing tank, and then controls the inside of the closed chamber by the decompression means. The pressure is reduced (claim 7).

According to this apparatus, after the substrate is lifted from the processing tank, the inside of the closed chamber is depressurized by the decompression means and the substrate is exposed to the depressurized state, so that the drying efficiency of the substrate is further improved.

[0021]

Embodiments of the present invention will be described with reference to the drawings.

FIG. 1 schematically shows an example of a substrate processing apparatus according to the present invention. The substrate processing apparatus 10 shown in FIG.
Is a so-called one-bath type substrate processing apparatus in which a substrate such as a semiconductor wafer is immersed in a processing liquid to perform surface treatment while various chemical solutions and pure water are sequentially stored in a single processing tank.

As shown in FIG. 1, the substrate processing apparatus 10 comprises:
It has a closed chamber 12, a processing tank 14 for storing a processing liquid in the closed chamber 12, an organic solvent vapor supply system, a decompression system for evacuating the chamber, and a supply and discharge of the processing liquid. It has a configuration with a system.

An opening 16 is formed in the upper part of the closed chamber 12, and a door 18 for opening and closing the opening 16 is slidably provided. It is designed to be put in and out of the closed chamber 12.

The processing tank 14 has an upper opening and is formed in a rectangular box shape having a liquid receiving portion 14a around the processing tank 14. The whole of the processing tank 14 is made of, for example, PTFE (polytetrafluoroethylene), PVDF (hydrofluoric acid). Vinylidene chloride)
It is made of a resin material having excellent erosion resistance.

The treatment tank 14 is connected with a water supply pipe 20 and a drainage pipe 21 which constitute a treatment liquid supply / drainage system. The water supply pipe 20 has an upstream end connected to a pure water supply source (not shown), and a downstream end connected to the bottom of the treatment tank 14 and communicates with the inside of the treatment tank 14. The valve 22, the mixing valve 24 and the three-way valve 26 are interposed in order from the upstream side.

The mixing valve 24 has a chemical supply pipe 2
8a to 28d are connected to each other,
a to 28d are connected to supply sources (not shown) of different types of chemical solutions, respectively,
Opening / closing valves 30a to 30d are provided respectively.
That is, by opening one of the open / close valves 30a to 30d in a state where the open / close valve 22 of the water supply pipe 20 is opened, one type of chemical solution is mixed with the pure water supplied through the water supply pipe 20. Then, the pure water is supplied to the processing tank 14 while all the open / close valves 30a to 30d are closed. Thereby, the water supply pipe 20 is shared as a supply path for pure water and each chemical solution.

The drain pipe 21 has an upstream end on the processing tank 14.
, While the downstream end is connected to a waste liquid tank (not shown). In addition, the drain pipe 21 includes
A branch pipe 21a is provided on the way.
Are connected to the three-way valve 26 of the water supply pipe 20. That is, for example, when it is necessary to discharge all the processing liquid in the processing tank 14 while introducing the liquid overflowing from the processing tank 14 to the liquid receiving section 14a into the waste liquid tank via the drain pipe 21, the three-way valve is used. 26, the water pipe 2
The processing liquid in the processing tank 14 is introduced into the waste liquid tank via the 0, three-way valve 26, the branch pipe 21a, and the drain pipe 21.

As a supply system for the organic solvent vapor, a vapor supply pipe 32 is provided. The upstream end of the steam supply pipe 32 is connected to a supply source of nitrogen gas, while the downstream end of the steam supply pipe 32 is connected to the closed chamber 12 and communicates with the inside thereof.
In between, a bypass passage 36 is provided via a pair of three-way valves 34a and 34b, and a vapor generator 38 of an organic solvent is provided in the bypass passage 36. In response to the switching of each of the three-way valves 34a and 34b, the supply system of the organic solvent vapor is switched so as to be switched between a state in which nitrogen gas is introduced into the closed chamber 12 via the bypass passage 36 and a state in which the gas is shut off. Is configured.

The steam generator 38 is configured to generate a vapor of an alcohol-based organic solvent, in this embodiment, an IPA vapor. As described above, nitrogen gas is supplied to the closed chamber 12 through the bypass passage 36. By being introduced, IPA vapor is introduced into the closed chamber 12 using this nitrogen gas as a carrier gas.

A decompression tube 40 is provided as a decompression system for evacuating the closed chamber 12. This decompression tube 4
0, the upstream end is connected to the closed chamber 12 and communicates with the inside thereof, while the downstream end is connected to, for example, a water-sealed vacuum pump 44.
An exhaust pipe 47 having a filter (not shown) is connected to the three-way valve 46. Then, in response to the switching of the three-way valve 46, the closed chamber 12 is connected to the vacuum pump 44 to depressurize the inside thereof,
The state can be switched to a state in which the inside of the closed chamber 12 is opened to the atmosphere through the air.

In the closed chamber 12, a handling means 48 (shown in FIG. 2) for holding a plurality of substrates W is provided.
The substrate W is immersed in the processing liquid in the processing bath 14 as shown by a solid line in FIG. The substrate W is taken out of the processing liquid by raising 48 from this position.

On the outside of the upper part of the closed chamber 12,
A transfer mechanism for transferring the substrate W to and from the handling means 48 is provided movably, and the substrate W is transferred between the transfer mechanism and the handling means 48 through the opening 16. Thereby, the substrate W is put into and taken out of the substrate processing apparatus 10.

By the way, the substrate processing apparatus 10 is provided with a controller 50 as shown in FIG. 2, which includes valves for a supply system of an organic solvent vapor, a decompression system, and a supply and discharge system of a processing liquid, a handling means 48 and The transfer mechanism and the like are electrically connected to the controller 50. The controller 50 is provided with a main control unit 52, a drive control unit 54 and a valve control unit 56, and a handling unit 48 for the drive control unit 54 and an organic solvent vapor for the valve control unit 56. Each valve such as a supply system is connected to each other.

When the substrate processing apparatus 10 operates,
By controlling the handling unit 48 via the drive control unit 54 and the valves such as the organic solvent vapor supply system via the valve control unit 56 by the main control unit 52, respectively, The processing operation of the substrate W is performed.

Next, the processing operation of the substrate W by the substrate processing apparatus 10 will be described with reference to the flowchart of FIG.

First, the opening 16 of the closed chamber 12 is opened with the handling means 48 set at the rising end position, and a plurality of substrates W transferred above the closed chamber 12 are collectively moved by the transfer mechanism. Then, the opening 16 is closed by being delivered to the handling means 48. At this time, the inside of the closed chamber 12 is set to the atmospheric pressure, and the supply of the IPA vapor is not performed. The processing tank 14 is supplied with pure water and overflows to the liquid receiving portion 14a, whereby an upward flow of pure water is formed in the processing tank 14.

When the opening 16 of the closed chamber 12 is closed, the handling means 48 is moved to the lower end position, and the substrate W is immersed in pure water in the processing bath 14 at a time. Then, by arranging the substrate W in such an upward flow of pure water, the substrate W is subjected to a water washing process (steps S1 and S2).

After the substrate W has been subjected to the water washing process for a certain period of time, the chemical is supplied to the processing tank 14 by opening one of the open / close valves 30a to 30da of the chemical supply pipes 28a to 28d. The substrate W is subjected to a chemical treatment. Also at this time, the chemical is continuously supplied to the processing tank 14 and overflows to the liquid receiving portion 14a.
Thereby, the processing residue is led out of the processing tank 14. Thereafter, the opening / closing valves 30a to 30d are sequentially and selectively opened, so that different chemicals are supplied into the processing tank 14, whereby a plurality of types of chemicals are sequentially processed on the substrate W (step). S3, 4).

When all the chemical treatments have been completed, pure water is again supplied to the treatment tank 14 and the substrate W is subjected to a water washing treatment. Is stopped (steps S5 and S6).

Then, by switching the three-way valves 34a and 34b in the organic solvent vapor supply system, IPA vapor is introduced into the closed chamber 12 for a certain period of time (steps S7 and S8). By introducing the IPA vapor in this manner, the space inside the closed chamber 12 is filled with the IPA vapor, and the IPA vapor dissolves in the pure water in the processing tank 14, and a substantially uniform liquid layer of the IPA is formed on the surface of the pure water. It is formed. Note that the introduction time of the IPA vapor varies depending on the number of the substrates W and the like, but in the present embodiment, the introduction time is about 10 minutes.

When the introduction of the IPA vapor is stopped, the substrate W is taken out of the processing bath 14 by moving the handling means 48 to the rising end position (step S9). At this time, since the liquid layer of IPA is formed on the surface of the pure water in the processing tank 14 as described above, the substrate W is taken out through such a liquid layer of IPA, so that the substrate is washed with water. For example, hydrophobic processing residues that have not been removed are effectively removed. Further, as the substrate W is taken out, a uniform IPA liquid film is formed over the entire surface of the substrate W, thereby increasing the wettability of the substrate surface.
It flows down into the processing tank 14 together with A. Therefore, processing tank 1
Due to these effects, the water after the water rinsing process and the processing residues are favorably removed over the entire surface of the substrate W taken out of the substrate 4.

When the substrate W is taken out of the processing tank 14,
In the processing liquid supply / discharge system, the three-way valve 26 is switched so that the pure water in the processing tank 14 is rapidly drained, and the three-way valves 34a and 34b are switched again to close the closed chamber 12.
IPA vapor is introduced for a certain period of time (step S
10, 11). Thus, the IPA vapor is supplied to the closed chamber 1
The IPA vapor is condensed on the substrate surface by being introduced into the substrate 2, and pure water contained in the IPA liquid film on the substrate surface is evaporated by the heat of condensation. Then, the watermark is reduced, and the drying efficiency of the substrate is improved. In this case, the introduction of the IPA vapor is performed for about 5 minutes in this embodiment.

Next, the three-way valve 46 of the pressure reducing system is switched, the closed chamber 12 is connected to the vacuum pump 44, and the pressure in the closed chamber 12 is reduced (step S12). Thereby, the IPA on the substrate surface is evaporated and the substrate W is dried.

When the pressure in the closed chamber 12 is reduced for a certain period of time, the open / close valve 46 is switched to open the closed chamber 12 to the atmosphere (step S1).
3) The opening 16 is opened, and the substrate W is collectively carried out of the closed chamber 12 by the transfer device. Thus, the processing operation of the substrate W by the substrate processing apparatus 10 ends.

According to the substrate processing apparatus 10 described above,
After the final rinsing treatment with pure water is completed, the treatment tank 14
By supplying IPA vapor into the inside, a liquid layer of IPA is formed on the surface of the pure water, and the substrate W is taken out through the liquid layer to remove water and processing residues on the substrate surface as described above. The IP while removing the substrate from pure water
A vapor is blown into a closed chamber, thereby condensing IPA vapor on the substrate surface to remove water and processing residues. In comparison with a conventional apparatus of this type, water and processing residues adhering to the substrate are spread over the entire substrate surface. It can be removed well.

That is, in the conventional apparatus, the introduction of IPA vapor into the closed chamber 12
An air stream of PA vapor is generated. As a result, the position of condensation of IPA on the substrate surface is deviated due to the influence of the air current, and
There is a possibility that the effect of A to remove processing residues and the like may not be exerted uniformly over the entire substrate. In contrast, the substrate processing apparatus 1
According to No. 0, the IPA liquid film is formed uniformly over the entire surface of the substrate W by taking out the substrate W from the processing bath 14 via the IPA liquid layer formed on the surface of the pure water.
The effect of removing the processing residue by PA is exerted almost uniformly over the entire substrate. Therefore, the water and the processing residue attached to the substrate W are more reliably removed, and the water and the processing residue of the rinsing process can be satisfactorily removed over the entire substrate surface.

Although the substrate processing apparatus 10 of the present embodiment and the conventional apparatus have a common configuration in that IPA vapor is supplied into a closed chamber, processing residues adhering to the substrate surface are reduced to a certain level. The time required to remove the processing residues attached to the substrate surface, specifically, the time required to reduce the processing residue adhering to the substrate surface to 30 or less, is 15 minutes in the conventional apparatus, but is different in the apparatus of the present embodiment. It has been experimentally confirmed that the process can be performed in 5 minutes, and the effect of removing the processing residue can be greatly enhanced. As a result, the processing residue can be efficiently removed as a result. As a result, the consumption of IPA can be reduced to less than half that of the conventional apparatus.

The substrate processing apparatus 10 for processing a plurality of substrates W collectively has the following features. That is, when processing a plurality of substrates collectively, in the conventional apparatus, depending on the position of the substrate, the effect of removing the processing residue and the like by the IPA may not be exerted uniformly between the substrates due to the influence of the air flow. However, according to the substrate processing apparatus 10, all the substrates W have I
Since the PA liquid film can be formed uniformly,
The effect of removing processing residues and the like by PA is exerted almost uniformly between the substrates. Therefore, there is an advantage that the quality of the substrate W can be made uniform.

The substrate processing apparatus 10 of the above embodiment
Is an example of the substrate processing apparatus according to the present invention, and its specific configuration and control (operation) can be appropriately changed without departing from the gist of the present invention.

For example, in the substrate processing apparatus 10, after a final rinsing process with pure water, IPA vapor is introduced into the closed chamber 12, and the vapor is dissolved in the pure water to form a liquid layer of IPA. However, it is also possible to use the supply / discharge system of the processing liquid or to separately supply a dedicated supply system to flow the IPA directly into the processing tank 14. However, according to the above embodiment, there is an advantage that a uniform IPA liquid layer can be easily formed on the surface of pure water. In addition, since the inside of the closed chamber 12 is filled with the IPA vapor, when the substrate W is taken out, the IP
Since the A vapor condenses on the substrate surface and the pure water contained in the IPA liquid film on the substrate surface evaporates, there is an advantage that the water on the substrate surface can be effectively removed.

In this embodiment, the substrate W is placed in the processing tank 1.
4, the pure water in the processing tank 14 is rapidly drained. However, the draining timing does not necessarily need to be immediately after the substrate W is taken out of the processing tank 14.
Drainage may be performed at an appropriate timing after the substrate W is lifted. At this time, it is not always necessary to drain the pure water rapidly, but if it is drained quickly, the processing residues floating in the liquid are less likely to adhere to the wall surface of the processing tank 14,
There is an advantage that the residue of the processing residue in the processing tank 14 can be reduced. Instead of discharging the pure water as described above, pure water may be continuously supplied to the processing tank 14 to overflow into the liquid receiving portion 14a, thereby discharging the processing residue in the liquid.

In the above embodiment, IPA is used as the organic solvent. However, the type of the organic solvent to be used may be appropriately selected according to the type of the substrate to be produced. To form a liquid layer on the water surface of the processing bath 14 and, when the substrate W is taken out of the processing bath 14, form a liquid film on the substrate surface to remove water or processing residues on the substrate surface. Any organic solvent may be used as long as it has a function of contributing to removal.

[0054]

As described above, according to the processing method of the present invention, after supplying the organic solvent into the closed chamber,
Since the supply of the organic solvent into the closed chamber is stopped and the substrate is pulled up from the processing layer, the substrate is pulled up without drying when passing through the gas-liquid interface, and a liquid film of the organic solvent is formed over the entire substrate surface, This enhances the wettability of the substrate. As a result, it is possible to effectively remove water and processing residues adhered to the surface of the substrate, particularly, hydrophobic processing residues that are difficult to be removed by the water washing treatment (claim 1).

Further, according to the substrate processing method of the present invention, since the organic solvent or the inert gas is supplied to the substrate after the substrate is lifted from the processing tank, the watermark can be reduced and the drying efficiency of the substrate can be improved. (Claim 2).

Further, according to the substrate processing method of the present invention, the substrate is exposed to a reduced pressure state after the substrate is lifted from the processing tank, so that the drying efficiency of the substrate can be further improved. .

Further, according to the substrate processing apparatus of the present invention, after the organic solvent supply means supplies the organic solvent into the closed chamber while the substrate is immersed in the processing tank, the supply of the organic solvent is stopped. In a state in which the supply of the solvent is stopped, the handling means lifts the substrate from the processing tank, so that the substrate is pulled up without drying when passing through the gas-liquid interface, and a liquid film of the organic solvent is formed over the entire substrate surface, This enhances the wettability of the substrate. As a result, it is possible to effectively remove water and processing residues attached to the surface of the substrate, particularly, hydrophobic processing residues that are difficult to be removed by the water washing treatment.

Further, in the substrate processing apparatus of the present invention, since the organic solvent is supplied to the substrate by the organic solvent supply means after the substrate is pulled up from the processing tank, the water mark can be reduced and the drying efficiency of the substrate can be improved. (Claim 5).

Further, in the substrate processing apparatus of the present invention, since the inert gas is supplied to the substrate by the inert gas supply means after the substrate is lifted from the processing tank, the water mark can be reduced and the drying efficiency of the substrate can be reduced. It can be improved (claim 6).

Further, in the substrate processing apparatus of the present invention, after the substrate of the present invention is lifted from the processing tank, the inside of the closed chamber is depressurized by the decompression means, and the substrate is exposed to the depressurized state. It can be further improved (claim 7).

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram illustrating an example of a substrate processing apparatus according to the present invention.

FIG. 2 is a block diagram illustrating a control system of the substrate processing apparatus.

FIG. 3 is a flowchart illustrating an example of a substrate processing operation in the substrate processing apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Substrate processing apparatus 12 Sealed chamber 14 Processing tank 20 Water supply pipe 21 Drain pipe 21a Branch pipe 28a-28d Chemical supply pipe 30a-30d Open / close valve 32 Steam supply pipe 40 Decompression pipe 44 Vacuum pump 47 Exhaust pipe 48 Handling means 50 Controller 52 Main Control means 54 Drive control means 56 Valve control means W Substrate

Claims (7)

[Claims] 1. A substrate processing method for immersing a substrate in a processing tank accommodated in a closed chamber and performing a washing process on the substrate, wherein the substrate is immersed in the processing tank storing water. A method of processing a substrate, comprising: supplying an organic solvent into a chamber; stopping the supply of the organic solvent into the closed chamber; and stopping the supply of the organic solvent, lifting the substrate from the processing bath. 2. The substrate processing method according to claim 1, wherein an organic solvent or an inert gas is supplied into the closed chamber after lifting the substrate from the processing tank. 3. The substrate processing method according to claim 1, wherein the pressure in the closed chamber is reduced after lifting the substrate from the processing tank. 4. A processing tank for storing water, a closed chamber containing the processing tank, an organic solvent supply unit for supplying an organic solvent into the closed chamber, and a handling unit for lifting a substrate from the processing tank. In a state where the substrate is immersed in the processing bath, the organic solvent is supplied into the closed chamber by the organic solvent supply unit, and then the supply of the organic solvent is stopped. Control means for lifting the substrate from the processing tank by means. 5. The substrate processing apparatus according to claim 4, wherein the control means causes the organic solvent to be supplied into the closed chamber by the organic solvent supply means after lifting the substrate from the processing tank. Substrate processing apparatus. 6. The substrate processing apparatus according to claim 4, further comprising: an inert gas supply unit configured to supply an inert gas into the closed chamber, wherein the control unit lifts the substrate from the processing tank. And supplying an inert gas into the closed chamber by the inert gas supply means. 7. The substrate processing apparatus according to claim 4, further comprising a pressure reducing unit configured to reduce the pressure in the closed chamber, wherein the control unit lifts the substrate from the processing tank, A substrate processing apparatus, wherein the pressure inside the closed chamber is reduced by a pressure reducing means.