JPH1031392A - Method for inspecting surface of photoreceptor base material - Google Patents
Method for inspecting surface of photoreceptor base materialInfo
- Publication number
- JPH1031392A JPH1031392A JP18721896A JP18721896A JPH1031392A JP H1031392 A JPH1031392 A JP H1031392A JP 18721896 A JP18721896 A JP 18721896A JP 18721896 A JP18721896 A JP 18721896A JP H1031392 A JPH1031392 A JP H1031392A
- Authority
- JP
- Japan
- Prior art keywords
- base material
- drum
- defect
- substrate
- photoreceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 108091008695 photoreceptors Proteins 0.000 title claims abstract description 19
- 239000000463 material Substances 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims description 12
- 230000007547 defect Effects 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims description 31
- 238000006243 chemical reaction Methods 0.000 abstract description 16
- 238000007689 inspection Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 241000519995 Stachys sylvatica Species 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Landscapes
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Discharging, Photosensitive Material Shape In Electrophotography (AREA)
- Photoreceptors In Electrophotography (AREA)
- Cleaning In Electrography (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、電子写真感光体用
のドラム状感光体基材の表面検査方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for inspecting the surface of a drum-shaped photosensitive member substrate for an electrophotographic photosensitive member.
【0002】[0002]
【従来の技術】電子写真方式の複写機、プリンター等に
使用される感光体は、アルミニウム等の導電性基材上
に、感光層が被覆されている。その感光体の製造過程に
おいて、感光層を被覆する前の基材表面に、数μm以上
の大きさの突起、凹みおよび傷等の欠陥があると、感光
層に欠陥が生じ、白抜け黒点等の画像品質の低下を招く
ことになる。2. Description of the Related Art A photosensitive member used in an electrophotographic copying machine, printer, or the like has a photosensitive layer coated on a conductive base material such as aluminum. In the manufacturing process of the photoreceptor, if the surface of the base material before coating the photosensitive layer has defects such as protrusions, dents and scratches having a size of several μm or more, defects occur in the photosensitive layer and white spots and black spots. Image quality is deteriorated.
【0003】従来、感光体の表面検査方法については、
感光体表面を照明し、その表面反射光をCCDカメラに
より検出し、画像処理を行う方法が提案されている(特
開昭61−7406号公報)。また、レーザ光をポリゴ
ンミラーにより感光体ドラムの軸方向に光走査し、欠陥
からの散乱光を検出する方式が提案されている(特開昭
60−86405号公報)。Conventionally, a method for inspecting the surface of a photoreceptor has been described.
There has been proposed a method of illuminating the surface of a photoreceptor, detecting the light reflected from the surface with a CCD camera, and performing image processing (Japanese Patent Laid-Open No. 61-7406). Further, a method has been proposed in which laser light is optically scanned in the axial direction of a photosensitive drum by a polygon mirror to detect scattered light from defects (Japanese Patent Application Laid-Open No. 60-86405).
【0004】[0004]
【発明が解決しようとする課題】しかしながら、上記の
方法は、いずれも感光層が被覆された後の感光体の表面
検査に適用されるものであって、それらの方法による検
出可能な欠陥の大きさは数10μm以上であり、数μm
の大きさからの微小な欠陥の検出が必要な感光体基材表
面の検査には適用できないという問題があった。However, all of the above methods are applied to the surface inspection of the photoreceptor after the photosensitive layer is coated, and the size of the defect which can be detected by those methods is increased. Is several tens μm or more, and several μm
However, there is a problem that the method cannot be applied to the inspection of the surface of the photoreceptor base material which requires the detection of a minute defect from the size.
【0005】本発明は、上記従来の技術における問題点
を解消することを目的とするものであって、本発明の目
的は、感光体基材表面の微小な欠陥を精度よく検出する
ことが可能な表面検査方法を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems in the prior art, and an object of the present invention is to detect minute defects on the surface of a photoreceptor substrate with high accuracy. It is to provide a simple surface inspection method.
【0006】[0006]
【課題を解決するための手段】本発明の上記目的を達成
するため、本発明者は鋭意研究を重ねた結果、ドラム状
の感光体基材の表面に、ドラム中心軸に沿って斜め方向
からレーザ光をスポット照射し、表面からの散乱光を検
出することにより、微小な欠陥の確認が可能なことを知
見し、本発明を完成するに至った。Means for Solving the Problems In order to achieve the above object of the present invention, as a result of intensive studies, the present inventor has found that the surface of a drum-shaped photoreceptor substrate is obliquely arranged along the center axis of the drum. The present inventors have found that minute defects can be confirmed by irradiating a laser beam with a spot and detecting scattered light from the surface, and have completed the present invention.
【0007】すなわち、本発明の感光体基材の表面検出
方法は、ドラム状の感光体基材の表面に、感光体基材の
中心軸に沿って斜め方向からレーザ光をスポット照射
し、感光体基材を回転させながらレーザ光を感光体基材
の軸方向に移動させることにより、感光体基材の表面全
体を走査して、該表面上の欠陥から発する散乱光を検出
することを特徴とする。That is, in the method for detecting the surface of a photoreceptor substrate according to the present invention, the surface of a drum-shaped photoreceptor substrate is spot-irradiated with a laser beam in an oblique direction along the central axis of the photoreceptor substrate. By moving the laser beam in the axial direction of the photoconductor substrate while rotating the body substrate, the entire surface of the photoconductor substrate is scanned, and scattered light emitted from defects on the surface is detected. And
【0008】[0008]
【発明の実施の形態】本発明において、スポット照射の
ためには、半導体レーザまたはHe−Neレーザ等のガ
スレーザが好ましく使用され、スポット径は100μm
以下のものが好ましく使用される。DESCRIPTION OF THE PREFERRED EMBODIMENTS In the present invention, a semiconductor laser or a gas laser such as a He-Ne laser is preferably used for spot irradiation, and the spot diameter is 100 μm.
The following are preferably used:
【0009】感光体基材表面に、斜め方向からレーザ光
をスポット照射し、その表面を走査する際に、表面に欠
陥が存在すると、照射光は欠陥により散乱する。したが
って、その散乱光をレーザ光の正反射位置から外れた位
置に設置した光電変換手段により検出すれば、基材表面
に存在する欠陥を検出することができる。微小な欠陥を
精度よく検出するためには、レーザ光の入射角度が走査
により変化しないことが重要である。そのためには、ド
ラム状の感光体基材の表面に斜め方向からレーザ光を照
射し、感光体基材を回転しながらその軸方向に移動し
て、基材表面全体を走査すればよい。When a laser beam is spot-irradiated on the surface of the photoreceptor substrate from an oblique direction, and the surface is scanned, if a defect is present on the surface, the irradiation light is scattered by the defect. Therefore, if the scattered light is detected by the photoelectric conversion means provided at a position deviated from the regular reflection position of the laser light, a defect existing on the surface of the base material can be detected. In order to accurately detect minute defects, it is important that the incident angle of the laser beam does not change due to scanning. For this purpose, the surface of the drum-shaped photoconductor substrate may be irradiated with laser light from an oblique direction, and the photoconductor substrate may be moved in the axial direction while rotating, thereby scanning the entire surface of the substrate.
【0010】また、欠陥の大きさは、光電変換手段によ
り検出される光電変換信号と相関関係があるので、あら
かじめ設定した信号レベルと比較し、より大きな信号の
みを検出するようにすれば目的とする大きさ以上の欠陥
を検出することができる。Further, since the size of the defect has a correlation with the photoelectric conversion signal detected by the photoelectric conversion means, it is necessary to compare the signal level with a preset signal level and detect only a larger signal. It is possible to detect a defect having a size larger than the size of the defect.
【0011】[0011]
【実施例】以下、本発明の実施例を図面によって詳細に
説明する。図1は、本発明を実施するための装置の一例
である。図中、1はドラム状の感光体基材(以下、「ド
ラム基材」と略記する。)であって、モータ2により回
転する。3はレーザ光をドラム表面にスポット照射する
ためのレーザ光源であって、この図の実施例において
は、先端に集光レンズを設けた市販の半導体レーザコリ
メータが使用される。4は散乱光を検出するための光電
変換素子であり、この図の実施例においては、フォトマ
ルが使用される。レーザ光源3および光電変換素子4は
移動ステージ5によりドラム基材の中心軸方向に移動で
きるように構成されている。また、6はデータ処理部で
ある。Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is an example of an apparatus for implementing the present invention. In FIG. 1, reference numeral 1 denotes a drum-shaped photoconductor substrate (hereinafter abbreviated as “drum substrate”), which is rotated by a motor 2. Reference numeral 3 denotes a laser light source for irradiating a laser beam with a spot on the drum surface. In the embodiment shown in this figure, a commercially available semiconductor laser collimator having a condenser lens at the tip is used. Reference numeral 4 denotes a photoelectric conversion element for detecting scattered light, and a photomultiplier is used in the embodiment shown in FIG. The laser light source 3 and the photoelectric conversion element 4 are configured to be movable in the central axis direction of the drum substrate by the moving stage 5. Reference numeral 6 denotes a data processing unit.
【0012】図2は図1におけるレーザ光源3と光電変
換素子4の位置関係を示した説明図である。レーザ光源
3は、ドラム基材の中心軸に対する角度(α)が小さい
ほど、より小さな欠陥の検出が可能となるため、αが0
°から60°まで、特に、0°から30°までになるよ
うに設けるのが好ましい。また、光電変換素子4は、ド
ラムの中心軸に対する角度(β)が、レーザ光の正反射
光の光路から外れた位置に設置されるが、特にレーザ光
の正反射光の光路から90°までの範囲、すなわちα<
β≦90°になるように設けるのが好ましい。FIG. 2 is an explanatory diagram showing the positional relationship between the laser light source 3 and the photoelectric conversion element 4 in FIG. The laser light source 3 can detect a smaller defect as the angle (α) with respect to the center axis of the drum substrate becomes smaller.
It is preferable that the angle is from 0 ° to 60 °, particularly from 0 ° to 30 °. Further, the photoelectric conversion element 4 is installed at a position where the angle (β) with respect to the center axis of the drum deviates from the optical path of the regular reflection light of the laser light, and particularly, up to 90 ° from the optical path of the regular reflection light of the laser light. , That is, α <
It is preferable to provide them so that β ≦ 90 °.
【0013】また、ドラム基材上のレーザ光のスポット
径は、半導体レーザコリメータの先端の集光レンズによ
り調整されるが、スポット径が小さいほど、より小さな
欠陥の検出が可能となるため、スポット径は100μm
以下、特に50μm以下であることが好ましい。The spot diameter of the laser beam on the drum substrate is adjusted by the condenser lens at the tip of the semiconductor laser collimator. The smaller the spot diameter, the smaller the defect can be detected. Diameter is 100 μm
The thickness is preferably 50 μm or less.
【0014】上記構成を有する表面検査装置によってド
ラム基材の検査を行う場合は、ドラム基材1を回転モー
タ2により一定周速で回転させながら、レーザ光源3お
よび光電変換素子4を移動ステージ5により一定速度で
ドラム基材の軸方向に移動させる。ドラム基材1が1回
転する間に移動ステージ5が移動する距離は、レーザ光
のスポット径より小さくなるように、好ましくはスポッ
ト径の半分の大きさ以下になるようにして、基材表面の
全ての位置を均一に走査する。この間に光電変換素子4
からの電気信号をデータ処理部5により記録する。ドラ
ム基材上に欠陥がある場合は、欠陥からの散乱光により
光電変換素子4の電気信号が増加するため、この信号変
化により欠陥を検出することが可能となる。In the case of inspecting the drum substrate by the surface inspection apparatus having the above configuration, the laser light source 3 and the photoelectric conversion element 4 are moved while the drum substrate 1 is rotated at a constant peripheral speed by the rotary motor 2. To move the drum substrate in the axial direction at a constant speed. The moving distance of the moving stage 5 during one rotation of the drum substrate 1 is set to be smaller than the spot diameter of the laser beam, preferably equal to or smaller than half the spot diameter. Scan all positions uniformly. During this time, the photoelectric conversion element 4
Are recorded by the data processing unit 5. When there is a defect on the drum substrate, the electric signal of the photoelectric conversion element 4 increases due to the scattered light from the defect, so that the defect can be detected based on this signal change.
【0015】また、図3は、欠陥の大きさと、欠陥から
の散乱光による光電変換素子の電気信号の大きさ(散乱
光強度)との関係を示すグラフである。なお、図3のグ
ラフは、レーザ光および光電変換素子の設置角度をそれ
ぞれα=20°およびβ=75°に設定し、さらにドラ
ム基材上のレーザ光のスポット径が30μmである条件
の下で作成したものである。FIG. 3 is a graph showing the relationship between the size of a defect and the size (scattered light intensity) of an electric signal of the photoelectric conversion element due to light scattered from the defect. Note that the graph of FIG. 3 shows that the setting angles of the laser beam and the photoelectric conversion element are set to α = 20 ° and β = 75 °, respectively, and that the laser beam spot diameter on the drum substrate is 30 μm. It was created in.
【0016】図3から分かるように、光電変換素子の電
気信号の大きさは、欠陥の大きさと相関関係がある。ま
た、検出可能な欠陥の大きさは、信号のS/N比からみ
て、2μm以上であった。したがって、本発明によれ
ば、あらかじめ設定した信号レベルと比較し、欠陥の大
きさを特定することができる。したがって、検出レベル
を特定の大きさに設定して、許容できない大きさ(例え
ば5μm以上)の信号変化を検出するようにすれば、許
容できない大きさの欠陥の数を正確に測定することが可
能である。As can be seen from FIG. 3, the magnitude of the electric signal of the photoelectric conversion element has a correlation with the magnitude of the defect. Further, the size of the detectable defect was 2 μm or more in view of the S / N ratio of the signal. Therefore, according to the present invention, the size of the defect can be specified by comparing the signal level with a preset signal level. Therefore, by setting the detection level to a specific size and detecting a signal change of an unacceptable size (for example, 5 μm or more), the number of defects of an unacceptable size can be accurately measured. It is.
【0017】なお、本発明は、ドラム状の感光体基材を
測定対象とするものであるが、感光体基材以外にも、ド
ラム状のものであれば、如何なるものに対しても適用可
能である。The present invention is intended to measure a drum-shaped photoreceptor substrate, but can be applied to any drum-shaped substrate other than the photoreceptor substrate. It is.
【0018】[0018]
【発明の効果】本発明は、上記の構成を有するから、ド
ラム状の基材の表面に存在する数μm程度の微小な欠陥
が精度よく検出できる。また、あらかじめ信号レベルを
設定しておけば、所定の大きさの欠陥のみを正確に検出
することも可能である。According to the present invention, since it has the above structure, a minute defect of about several μm existing on the surface of the drum-shaped substrate can be detected with high accuracy. If the signal level is set in advance, it is possible to accurately detect only a defect having a predetermined size.
【図1】 本発明を実施するための装置の概略の構成を
示す図である。FIG. 1 is a diagram showing a schematic configuration of an apparatus for carrying out the present invention.
【図2】 図1中のレーザ光源と光電変換素子の位置関
係を説明する図である。FIG. 2 is a diagram illustrating a positional relationship between a laser light source and a photoelectric conversion element in FIG.
【図3】 欠陥の大きさと、散乱光強度との関係を示す
グラフである。FIG. 3 is a graph showing the relationship between the size of a defect and the intensity of scattered light.
1…ドラム状の感光体基材(ドラム基材)、2…回転モ
ータ、3…レーザ光源、4…光電変換素子、5…移動ス
テージ、6…データ処理部。DESCRIPTION OF SYMBOLS 1 ... Drum-shaped photoreceptor base material (drum base material) 2 ... Rotation motor 3 ... Laser light source 4 ... Photoelectric conversion element 5 ... Moving stage 6 ... Data processing part.
Claims (2)
基材の中心軸に沿って斜め方向からレーザ光をスポット
照射し、感光体基材を回転させながらレーザ光を感光体
基材の軸方向に移動させることにより、感光体基材の表
面全体を走査して、該表面上の欠陥から発する散乱光を
検出することを特徴とするドラム状の感光体基材の表面
検査方法。1. A laser beam spot irradiation is performed on a surface of a drum-shaped photoreceptor base material obliquely along a central axis of the photoreceptor base material, and the laser light is irradiated while rotating the photoreceptor base material. A method for inspecting the surface of a drum-shaped photoconductor substrate, comprising scanning the entire surface of the photoconductor substrate by moving the material in the axial direction, and detecting scattered light generated from defects on the surface. .
ルと比較して、欠陥の大きさを特定することを特徴とす
る請求項1記載の感光体基材の表面検査方法。2. The method for inspecting the surface of a photoconductor substrate according to claim 1, wherein the size of the defect is specified by comparing the detected amount of scattered light with a preset level.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18721896A JPH1031392A (en) | 1996-07-17 | 1996-07-17 | Method for inspecting surface of photoreceptor base material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18721896A JPH1031392A (en) | 1996-07-17 | 1996-07-17 | Method for inspecting surface of photoreceptor base material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1031392A true JPH1031392A (en) | 1998-02-03 |
Family
ID=16202146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18721896A Pending JPH1031392A (en) | 1996-07-17 | 1996-07-17 | Method for inspecting surface of photoreceptor base material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1031392A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007155974A (en) * | 2005-12-02 | 2007-06-21 | Ricoh Co Ltd | Method for measuring micro area potential of photoconductor and measuring apparatus for micro area potential of photoconductor |
| CN118706847A (en) * | 2024-08-27 | 2024-09-27 | 厦门软件职业技术学院 | A workpiece appearance detection method and detection equipment based on visual detection |
-
1996
- 1996-07-17 JP JP18721896A patent/JPH1031392A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007155974A (en) * | 2005-12-02 | 2007-06-21 | Ricoh Co Ltd | Method for measuring micro area potential of photoconductor and measuring apparatus for micro area potential of photoconductor |
| CN118706847A (en) * | 2024-08-27 | 2024-09-27 | 厦门软件职业技术学院 | A workpiece appearance detection method and detection equipment based on visual detection |
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