JPH1046340A - Film forming method and film forming apparatus - Google Patents
Film forming method and film forming apparatusInfo
- Publication number
- JPH1046340A JPH1046340A JP20220296A JP20220296A JPH1046340A JP H1046340 A JPH1046340 A JP H1046340A JP 20220296 A JP20220296 A JP 20220296A JP 20220296 A JP20220296 A JP 20220296A JP H1046340 A JPH1046340 A JP H1046340A
- Authority
- JP
- Japan
- Prior art keywords
- shaped
- donut
- disk
- bracket
- center
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
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Abstract
(57)【要約】
【課題】 CDなどのドーナツ状円盤型基体の表面に被
膜を形成するに際し、被膜境界部にぼけ等の発生がない
スパッタリングなどによる成膜方法および成膜装置を提
供することを目的とする。
【解決手段】 減圧装置に接続したチャンバー51内で
ドーナツ状円盤型基体11の表面に金属材料を飛散させ
てドーナツ状の金属被膜2を形成する成膜方法におい
て、円盤型基体11の中央部13および周縁部14を表
裏両面から押圧保持して被膜材料を被着する成膜方法お
よび成膜装置である。
PROBLEM TO BE SOLVED: To provide a film-forming method and a film-forming apparatus by sputtering or the like in which a film boundary is not generated at the time of forming a film on a surface of a donut-shaped disc-shaped substrate such as a CD. With the goal. SOLUTION: In a film forming method in which a metal material is scattered on a surface of a donut-shaped disk-shaped substrate 11 in a chamber 51 connected to a decompression device to form a donut-shaped metal film 2, a central portion 13 of the disk-shaped substrate 11 is provided. And a film forming method and a film forming apparatus for applying a film material by pressing and holding the peripheral portion 14 from both sides.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、コンパクトディス
クなどのドーナツ状円盤型基体の表面にアルミニウム等
の被膜をスパッタリングなどで形成する成膜方法および
その装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for forming a film of aluminum or the like on the surface of a donut-shaped disk-shaped substrate such as a compact disk by sputtering or the like.
【0002】[0002]
【従来の技術】最近、デジタル化された音声信号や画像
情報を大量に記録するのに、広く使用されているコンパ
クトディスク(以下、CDと称する。)やデジタルビデ
オディスク(以下、DVDと称する。)は、ポリカーボ
ネイト等の透明な合成樹脂板製のドーナツ状円盤型基体
の表面にたとえばスパッタリング等などにより光反射率
の高いアルミニウム等の薄膜を形成したものからなる。2. Description of the Related Art Recently, compact discs (hereinafter referred to as CDs) and digital video discs (hereinafter referred to as DVDs) which are widely used for recording a large amount of digitized audio signals and image information. ) Is formed by forming a thin film of aluminum or the like having a high light reflectivity on a surface of a donut-shaped disk-shaped base made of a transparent synthetic resin plate such as polycarbonate by sputtering or the like.
【0003】そして、たとえばCDは、この基体表面の
アルミニウム等の膜に、情報を「1」、「0」からなる
デジタル信号に変えたビットと称する小さな孔を開けて
記録させてあり、これにレーザ光を当て反射波の有無
(孔の有無) を検出して、記録情報を読み出すようにし
ている。In a CD, for example, a small hole called a bit in which information is converted into a digital signal consisting of "1" and "0" is formed in a film of aluminum or the like on the surface of the substrate and recorded. The recorded information is read out by detecting the presence or absence of a reflected wave (the presence or absence of a hole) by applying a laser beam.
【0004】そして、現在の12cm型のCD1は、図
4に示すように円盤型基体11の外径が120mm、厚
さ1.2mm、中心部の孔12径が15mm、透明部が
基体11の中心から約20mmの間に、アルミニウム等
の被膜2が基体11の中心から約20mm〜約59mm
の孔12周辺の内端側13および外端側(周縁部)14
を除く間に形成してある。As shown in FIG. 4, the current 12 cm CD1 has a disc-shaped base 11 having an outer diameter of 120 mm, a thickness of 1.2 mm, a central hole 12 having a diameter of 15 mm, and a transparent portion formed of the base 11. Between about 20 mm from the center, the coating 2 of aluminum or the like is about 20 mm to about 59 mm from the center of the base 11.
Inner side 13 and outer end side (peripheral portion) 14 around hole 12
Are formed during the removal.
【0005】従来、このドーナツ状円盤型基体の表面に
たとえばスパッタリングにより被膜を形成するのは図5
に示すような設備を用い行なわれていた。チャンバー等
の真空室内のホルダー64の段部63上に載置して移送
されてきた円盤型基体11は、その状態のままスパッタ
ーを行うと全面に被膜2が形成されてしまうので、マス
キングをして作業が行われている。Conventionally, a film is formed on the surface of this toroidal disk-shaped substrate by, for example, sputtering, as shown in FIG.
The equipment was used as shown in the figure. If the disk-shaped substrate 11 placed and transferred on the stepped portion 63 of the holder 64 in a vacuum chamber such as a chamber is sputtered in this state, the coating 2 is formed on the entire surface, so that masking is performed. Work is being done.
【0006】すなわち、ホルダー64の内部には進退自
在に挿通して、センターブラケット81が配設されてい
る。このセンターブラケット81は、シャフト83の先
端にコイル状ばね85を介して弾性的に軸方向へ自由度
を有して取着され、先端がドーナツ状円盤型基体11の
孔内に容易に挿入されるようテーパー状の先頭部87が
形成されている。また、シャフト83の下端にはシリン
ダ装置84が連結してある。また、上方にはスパッター
源となるマグネトロンスパッタリング装置(図示しな
い。)、先端が円状のセンターマスク71およびリング
状のアウターマスク73が配設されている。That is, a center bracket 81 is disposed inside the holder 64 so as to be able to freely advance and retreat. The center bracket 81 is elastically attached to the distal end of the shaft 83 via a coil spring 85 with a degree of freedom in the axial direction, and the distal end is easily inserted into the hole of the donut-shaped disk-shaped base 11. A tapered head portion 87 is formed in such a manner. A cylinder device 84 is connected to a lower end of the shaft 83. Further, a magnetron sputtering device (not shown) serving as a sputtering source, a center mask 71 having a circular tip and an outer mask 73 having a ring shape are provided above.
【0007】そして、スパッター作業は、シリンダ装置
84を作動してシャフト83を上昇させると、センター
ブラケット81先端の先頭部87が円盤型基体11の中
央孔12内に侵入する。この先頭部87はテーパー状で
あるため中心の孔12内に容易に侵入し、円盤型基体1
1が平坦部に達したところで円盤型基体11はホルダー
64の段部63から押し上げられる。さらに押し上げが
すすむと、円盤型基体11の中央部がセンターマスク7
1の当接部72に当たるとともに円盤型基体11の周縁
部14もアウターマスク73の当接部74に当たる。こ
のとき、円盤型基体11は弾性変形してその反力により
円盤型基体11の周縁部14がアウターマスク73に確
実に押し当てられる。[0007] In the sputtering operation, when the cylinder device 84 is operated to raise the shaft 83, the leading portion 87 at the tip of the center bracket 81 enters the center hole 12 of the disk-shaped base 11. Since this head portion 87 is tapered, it easily penetrates into the center hole 12 and the
When 1 reaches the flat portion, the disk-shaped base 11 is pushed up from the step 63 of the holder 64. When the disc is further pushed up, the center of the disc-shaped base 11 is moved to the center mask 7.
The peripheral portion 14 of the disc-shaped base 11 also contacts the contact portion 74 of the outer mask 73 as well as the contact portion 72. At this time, the disk-shaped base 11 is elastically deformed, and the peripheral portion 14 of the disk-shaped base 11 is reliably pressed against the outer mask 73 by the reaction force.
【0008】そして、この状態でチャンバー内が所定の
真空度に達したら、マグネトロンスパッター装置を作動
してアルミニウムの微粒子を放出させ、円盤型基体11
の表面にアルミニウム被膜2を形成する。この被膜2の
形成が終了したら、シリンダ装置84を作動してシャフ
ト83を下降させると、円盤型基体11を保持している
インナーブラケット81が下降し、途中のホルダー64
部を通過のとき円盤型基体11の周縁部14が段部63
に引っ掛かって、円盤型基体11はこの段部63上に載
置される。In this state, when the inside of the chamber reaches a predetermined degree of vacuum, the magnetron sputtering device is operated to discharge aluminum fine particles, and the disk-shaped substrate 11
An aluminum coating 2 is formed on the surface of. When the formation of the coating 2 is completed, when the cylinder device 84 is operated to lower the shaft 83, the inner bracket 81 holding the disk-shaped base 11 is lowered and the holder 64 in the middle is lowered.
When passing through the portion, the peripheral portion 14 of the disc-shaped base 11
, The disc-shaped base 11 is placed on the step 63.
【0009】この後、チャンバー内に窒素等を封入して
ホルダー64から円盤型基体11を取り出すことによっ
て作業は終了する。Thereafter, the work is completed by filling the chamber with nitrogen or the like and taking out the disk-shaped substrate 11 from the holder 64.
【0010】しかし、このような装置によるスパッター
作業では、形成された被膜2に欠陥の生じることがあっ
た。これは、円盤型基体11の種類、材質、厚さなどに
よるもののほか、同一の部品でもばらつきがあり、上記
作業においてセンターブラケット81の押し上げ時に、
円盤型基体11の周縁部14に加わるアウターマスク7
3の押圧力が変わったり、被着される被膜材料によって
も円盤型基体11にかかる応力が変わるため、円盤型基
体11とセンターマスク71やアウターマスク73との
間に隙間を生じ被膜材料が入り込むことがあった。(な
お、図5はこの円盤型基体11が変形した状態を誇張し
て示してある。) この被膜の非形成部への被着は、境界部が不明確で被膜
がはみでるぼけ等の発生があり、特性的にも外観的にも
改善の必要があった。また、円盤型基体11がそり等湾
曲するときおよび湾曲から元に戻るときに外縁部14を
擦っていくので、この外縁部14付近には傷の発生があ
った。However, in the sputtering operation using such an apparatus, the formed coating film 2 may have defects. This depends on the type, material, thickness, and the like of the disc-shaped base 11, and there is also variation in the same part.
Outer mask 7 applied to peripheral portion 14 of disk-shaped base 11
Since the stress applied to the disk-shaped substrate 11 also changes depending on the pressing force of No. 3 and the applied coating material, a gap is formed between the disk-shaped substrate 11 and the center mask 71 or the outer mask 73, and the coating material enters. There was something. (Note that FIG. 5 is an exaggerated view of the deformed state of the disk-shaped substrate 11.) When the coating is applied to the non-formed portion, the boundary is unclear, and the coating may be blurred. There was a need for improvement in both characteristics and appearance. Further, the outer edge portion 14 is rubbed when the disk-shaped substrate 11 bends, for example, due to warping, and returns to the original state, so that there is a flaw near the outer edge portion 14.
【0011】[0011]
【発明が解決しようとする課題】本発明はこのような事
情に鑑みなされたもので、CDなどのドーナツ状円盤型
基体の表面に被膜を形成するに際し、被膜境界部にぼけ
等の発生がないスパッタリングなどによる成膜方法およ
び成膜装置を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of such circumstances, and when forming a film on the surface of a donut-shaped disk-shaped substrate such as a CD, there is no occurrence of blurring or the like at the boundary of the film. It is an object to provide a film forming method and a film forming apparatus by sputtering or the like.
【0012】[0012]
【課題を解決するための手段】本発明の請求項1に記載
の成膜方法は、減圧装置に接続したチャンバー内でドー
ナツ状円盤型基体の表面に被膜材料を飛散させてドーナ
ツ状の被膜を形成する成膜方法において、円盤型基体の
中央部および周縁部を表裏両面から押圧保持して被膜材
料を被着させることを特徴とする。According to a first aspect of the present invention, there is provided a film forming method, wherein a coating material is scattered on the surface of a donut-shaped disk-shaped substrate in a chamber connected to a decompression device to form a donut-shaped coating. In the method of forming a film, the central portion and the peripheral portion of the disk-shaped substrate are pressed and held from both front and back surfaces to apply the coating material.
【0013】円盤型基体は中央部および周縁部を表裏両
面からほぼ一直線の状態で保持された状態で被膜が形成
されるので、被膜形成の境界部を明確にだすことができ
る。また、円盤型基体にそり等の変形が発生しないので
基体の周縁部がずれることがなく擦り傷の発生もない。[0013] Since the film is formed in a state where the center portion and the peripheral portion of the disc-shaped substrate are held substantially straight from both the front and back surfaces, the boundary of the film formation can be clearly defined. Further, since no deformation such as warpage occurs in the disk-shaped base, the peripheral edge of the base does not shift and no abrasion occurs.
【0014】本発明の請求項2に記載の成膜方法は、減
圧装置に接続したチャンバー内のホルダーにドーナツ状
円盤型基体の周縁部を保持させる工程と、このホルダー
内を上昇させたセンターブラケットの先端部をドーナツ
状円盤型基体の孔内に挿入してこの円盤型基体をセンタ
ーブラケット上に載置させるとともに、このセンターブ
ラケットのシャフトに設けたアウターブラケットを円盤
型基体の周縁部に当接させる工程と、上記ブラケットを
上昇させてドーナツ状円盤型基体上面の中央部をセンタ
ーマスクに、また、周縁部をアウターマスクに当接させ
る工程と、排気した上記チャンバー内において被膜材料
を飛散させてドーナツ状円盤型基体の上面に被膜を形成
する工程と、上記両ブラケットを下降させてドーナツ状
円盤型基体上面をマスクから外す工程と、さらに、両ブ
ラケットを下降してドーナツ状円盤型基体をブラケット
から離しホルダー上に載置する工程と、上記ホルダー上
に載置されたドーナツ状円盤型基体を取り出す工程とを
具備していることを特徴とする。According to a second aspect of the present invention, there is provided a film forming method comprising: a step of holding a peripheral portion of a donut-shaped disc-shaped base in a holder in a chamber connected to a decompression device; and a center bracket raised in the holder. Is inserted into the hole of the donut-shaped disc-shaped base, and the disc-shaped base is placed on the center bracket, and the outer bracket provided on the shaft of the center bracket abuts on the periphery of the disc-shaped base. Raising the bracket, raising the bracket to contact the center portion of the upper surface of the donut-shaped disc-shaped base with the center mask, and contacting the peripheral portion with the outer mask, and scattering the coating material in the evacuated chamber. A step of forming a coating on the upper surface of the donut-shaped disk-shaped substrate, and lowering both brackets to remove the upper surface of the donut-shaped disk-shaped substrate. Removing the donut from the disc, further lowering the two brackets, separating the donut-shaped disc-shaped base from the bracket and mounting the donut-shaped disc-shaped base on the holder, and removing the donut-shaped disc-shaped base placed on the holder. It is characterized by having.
【0015】上記請求項1に記載したと同様な作用を奏
する。An operation similar to that of the first aspect is achieved.
【0016】本発明の請求項3に記載の成膜装置は、減
圧装置に接続したチャンバーと、このチャンバー内に設
けられたドーナツ状円盤型基体を保持するホルダーと、
このホルダー内に進退自在に挿通され、先端部がドーナ
ツ状円盤型基体の孔内に挿入されるとともに円盤型基体
を保持するセンターブラケットと、このセンターブラケ
ットのシャフトに設けられた、ドーナツ状円盤型基体の
端縁部に当接するアウターブラケットと、上記センター
ブラケットおよびアウターブラケットを上記シャフトに
弾性的に支持するばね部材と、上記センターブラケット
に対応して設けられたドーナツ状円盤型基体の中央部を
覆うセンターマスクと、上記アウターブラケットに対応
して設けられたドーナツ状円盤型基体の周縁部を覆うア
ウターマスクと、上記センターマスクおよびアウターマ
スクの配設側に設けられた被膜材料を飛散させる装置と
を具備していることを特徴とする。According to a third aspect of the present invention, there is provided a film forming apparatus comprising: a chamber connected to a decompression device; a holder provided in the chamber for holding a donut-shaped disk-shaped substrate;
A center bracket which is inserted into the holder so as to be able to advance and retreat and whose tip is inserted into a hole of the donut-shaped disc-shaped base and which holds the disc-shaped base, and a donut-shaped disc type provided on a shaft of the center bracket An outer bracket that abuts an edge of the base, a spring member that elastically supports the center bracket and the outer bracket on the shaft, and a center part of a donut-shaped disk-shaped base provided corresponding to the center bracket. A center mask for covering, an outer mask for covering a peripheral portion of the donut-shaped disk-shaped base provided corresponding to the outer bracket, and a device for scattering a coating material provided on the side where the center mask and the outer mask are provided. It is characterized by having.
【0017】上記請求項1に記載したと同様な作用を奏
する。According to the first aspect of the present invention, the same operation as described above is achieved.
【0018】本発明の請求項4に記載の成膜装置は、ホ
ルダーの内周径はドーナツ状円盤型基体の外径より大き
く、内周縁部に複数個の突出した凸部が形成され、ま
た、アウターブラケットの外周径はドーナツ状円盤型基
体の外径より大きく、周縁部に複数個の凹部が形成され
ていて、両者の凹凸部が合致して互いに接触することな
く挿通できることを特徴とする。According to a fourth aspect of the present invention, there is provided the film forming apparatus, wherein the inner peripheral diameter of the holder is larger than the outer diameter of the donut-shaped disk-shaped base, and a plurality of protruding convex portions are formed on the inner peripheral edge. The outer diameter of the outer bracket is larger than the outer diameter of the donut-shaped disk-shaped base, and a plurality of concave portions are formed in the peripheral portion, so that the concave and convex portions of the two coincide and can be inserted without contacting each other. .
【0019】同軸に中心が設けられたホルダーおよびア
ウターブラケットが、円盤型基体を保持して接触や衝突
をすることなく入り違いできる。The holder and the outer bracket whose center is provided coaxially can be interchanged without contact or collision while holding the disc-shaped base.
【0020】本発明の請求項5に記載の成膜装置は、セ
ンターブラケットおよびアウターブラケットは、それぞ
れ独立して作用するばね部材を備えていることを特徴と
する。A film forming apparatus according to a fifth aspect of the present invention is characterized in that the center bracket and the outer bracket each include a spring member that acts independently.
【0021】同軸に中心が設けられた両ブラケットは、
円盤型基体の厚さ等にばらつきがあったり品種が変わり
厚さが異なったりしてもばね部材が伸縮して円盤型基体
をほぼ一直線の状態で保持することができ、上記請求項
1に記載と同様な作用を奏する。[0021] Both brackets having their centers provided coaxially,
The spring member expands and contracts even if the thickness and the like of the disk-shaped base vary or the product type changes and the thickness differs, and the disk-shaped base can be held substantially in a straight line. It has the same function as.
【0022】[0022]
【発明の実施の形態】以下、本発明の実施の形態を図面
を参照して説明する。図1はCDの製造工程であるスパ
ッタリングによる成膜装置の一例を示す説明図、図2は
図1の要部を拡大して示す正面断面図である。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is an explanatory view showing an example of a film forming apparatus by sputtering which is a manufacturing process of a CD, and FIG. 2 is an enlarged front sectional view showing a main part of FIG.
【0023】図1において3はCD1のドーナツ状円盤
型基体11を載置搬送するベルトコンベヤー、4はトラ
ンスファー装置で、上下動(矢印)可能な回転軸41
に、この回転軸41を中央にして相対方向に伸びる後述
するチャンバー51の窓孔52を塞ぐ円盤状のブラケッ
ト42,42が取付けられ、各ブラケット42,42の
下面には真空ポンプなどの減圧装置(図示しない。)に
接続されたゴムパッド43,43が設けられている。な
お、このゴムパッド43,43の先端部は円盤型基体1
1中心の孔12より外周辺で被膜2が形成されない内端
側13に位置するのが、被膜2を傷付けることないので
好ましい。In FIG. 1, reference numeral 3 denotes a belt conveyor for placing and transporting the donut-shaped disk-shaped substrate 11 of the CD 1, and 4 denotes a transfer device, which is a rotating shaft 41 which can move up and down (arrows).
Disc-shaped brackets 42 and 42 are mounted on the lower surface of each of the brackets 42 and 42, which cover window holes 52 of a chamber 51, which will be described later. (Not shown) are provided. In addition, the tip portions of the rubber pads 43, 43
It is preferable to be located on the inner end side 13 where the coating 2 is not formed on the outer periphery than the center hole 12 because the coating 2 is not damaged.
【0024】また、5はスパッタリング装置で、上方に
スパッタするドーナツ状円盤型基体11より大径の円形
窓孔52,53が設けられたチャンバー51を備え、こ
のチャンバー51内には回転軸61を中央にして相対方
向に伸びるブラケット62,62が取付けられ、各ブラ
ケット62,62には円盤型基体11の周縁部14を載
置して保持する段部63を備えたリング状のホルダー6
4,64が設けられている。また、54は窓孔53に連
接したスパッターが行われる成膜室で、上記チャンバー
51と成膜室54とで真空室を構成している。A sputtering apparatus 5 includes a chamber 51 provided with circular window holes 52, 53 having a diameter larger than that of the donut-shaped disk-shaped base 11 for sputtering. A rotating shaft 61 is provided in the chamber 51. Brackets 62, 62 extending in relative directions at the center are attached, and each bracket 62, 62 has a ring-shaped holder 6 having a stepped portion 63 on which the peripheral portion 14 of the disk-shaped base 11 is placed and held.
4,64 are provided. Reference numeral 54 denotes a film forming chamber connected to the window hole 53 for performing sputtering, and the chamber 51 and the film forming chamber 54 constitute a vacuum chamber.
【0025】この成膜室54内にはマグネトロンスパッ
タリング装置7および円盤型基体11の中央部を覆うセ
ンターマスク71が設けられている。また、72はセン
ターマスク71先端の円盤型基体11の中央孔12近傍
との当接部である。また、73は窓孔53の内周に設け
られたアウターマスク、74は円盤型基体11の周縁部
14との当接部、55は真空ポンプなどの減圧装置(図
示しない。)に接続された排気通路、95等の黒点は気
密保持用のパッキングである。In the film forming chamber 54, a center mask 71 for covering the center of the magnetron sputtering apparatus 7 and the disk-shaped substrate 11 is provided. Reference numeral 72 denotes a contact portion of the tip of the center mask 71 with the vicinity of the center hole 12 of the disc-shaped base 11. Reference numeral 73 denotes an outer mask provided on the inner periphery of the window hole 53, reference numeral 74 denotes a contact portion with the peripheral portion 14 of the disk-shaped base 11, and reference numeral 55 denotes a decompression device (not shown) such as a vacuum pump. The black spots in the exhaust passage 95 and the like are packing for maintaining airtightness.
【0026】また、8はプッシャーで、ドーナツ状円盤
型基体11の中心の孔12に挿通して、この円盤型基体
11を保持するセンターブラケット81および円盤型基
体11の周縁部14を載置して保持するアウターブラケ
ット82がシャフト83に固定してある。また、成膜室
54側下方のチャンバー51の底壁には電磁作動または
気体圧作動して上記シャフト83を上下動させるシリン
ダ装置84が気密取着されている。なお、このシャフト
83は回転しない。Reference numeral 8 denotes a pusher, which is inserted through the center hole 12 of the donut-shaped disc-shaped base 11 and places the center bracket 81 holding the disc-shaped base 11 and the peripheral portion 14 of the disc-shaped base 11. An outer bracket 82 is fixed to the shaft 83. A cylinder device 84 for moving the shaft 83 up and down by electromagnetic operation or gas pressure operation is hermetically attached to the bottom wall of the chamber 51 below the film forming chamber 54. The shaft 83 does not rotate.
【0027】また、本発明の主要部を構成する部分を図
2および図3を参照してさらに説明する。図2中図1と
同一部分には同一の符号を付してその説明は省略する。Further, a part constituting a main part of the present invention will be further described with reference to FIGS. In FIG. 2, the same parts as those in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted.
【0028】上記シリンダ装置84に連接したシャフト
83先端にねじなどで固定されたセンターブラケット8
1および中間部にストッパー88aで固定された後側の
アウターブラケット82は、このシャフト83に対しそ
れぞれコイル状のばね部材85,86が嵌合してあって
弾性的に軸方向へ自由度を有して取着されている。図2
中、87はセンターブラケット81のテーパー状をなす
先頭部、88bはアウターブラケット82のコイル状ば
ね86のストッパー、89はアウターブラケット82先
端の円盤型基体11の周縁部14との当接部である。A center bracket 8 fixed to the tip of a shaft 83 connected to the cylinder device 84 with a screw or the like.
The outer bracket 82 on the rear side, which is fixed to the first and middle portions with a stopper 88a, has coil-shaped spring members 85 and 86 fitted to the shaft 83, respectively, and has elastic flexibility in the axial direction. It is attached. FIG.
Reference numeral 87 denotes a tapered leading portion of the center bracket 81, 88 b denotes a stopper of the coil spring 86 of the outer bracket 82, and 89 denotes a contact portion of the tip of the outer bracket 82 with the peripheral portion 14 of the disk-shaped base 11. .
【0029】また、図3(a)は、ドーナツ状円盤型基
体11の保持部がリング状をなすホルダー64の上面図
であって、その内周径は円盤型基体11の外径より大き
く、内周縁部に複数個の突出した段部63,63,…が
形成されている。また、図3(b)は、アウターブラケ
ット82の上面図であって、その外周径は円盤型基体1
1の外径より大きく、周縁部に複数個の凹部90,9
0,…が形成されている。そして、両者の関係はホルダ
ー64の内側にアウターブラケット82が入った二重の
状態になるが、それぞれの外周部は凹凸部65,90が
合致して互いに接触することなく隙間を挿通できる。FIG. 3A is a top view of a holder 64 in which the holding portion of the donut-shaped disk-shaped base 11 has a ring shape. The inner diameter of the holder 64 is larger than the outer diameter of the disk-shaped base 11. A plurality of projecting steps 63, 63, ... are formed on the inner peripheral edge. FIG. 3B is a top view of the outer bracket 82, the outer diameter of which is a disc-shaped base 1.
1 and a plurality of recesses 90, 9 on the peripheral edge.
0,... Are formed. Then, the relationship between the two is a double state in which the outer bracket 82 is inserted inside the holder 64, but the outer peripheral portions of the outer portions 82 and the concave and convex portions 65 and 90 match each other, so that the gap can be inserted without contacting each other.
【0030】そして、このスパッタリング装置5におけ
るスパッター作業は次のようにして行われる。The sputtering operation in the sputtering apparatus 5 is performed as follows.
【0031】ベルトコンベヤー3で搬送されてきたドー
ナツ状円盤型基体11は、下降してきたトランスファー
装置4の円盤状のブラケット42に設けられているゴム
パッド43,43によって吸引する。(真空ポンプなど
の減圧装置は図示されていない。) そして、トランスファー装置4の回転軸41を上昇さ
せ、たとえば図1の仮想線の位置まで来たら回転軸41
を180度回転し、つぎに、回転軸41を下降して、円
盤状のブラケット42をスパッタリング装置5のチャン
バー51の円形窓孔52上に移動させる。この状態は円
盤状のブラケット42がチャンバー51の円形窓孔52
を閉塞するとともに、チャンバー51内のリング状のホ
ルダー64上に円盤型基体11を位置させることにな
る。そして、ゴムパッド43,43の吸引を解くと(吸
引ラインに窒素等を封入)円盤型基体11はホルダー6
4の段部63上に載置される。The donut-shaped disk-shaped substrate 11 conveyed by the belt conveyor 3 is sucked by the rubber pads 43 provided on the disk-shaped bracket 42 of the transfer device 4 which has been lowered. (A depressurizing device such as a vacuum pump is not shown.) Then, the rotating shaft 41 of the transfer device 4 is raised, and for example, when the rotating shaft 41 comes to a position indicated by a virtual line in FIG.
Is rotated by 180 degrees, and then the rotating shaft 41 is lowered to move the disk-shaped bracket 42 onto the circular window hole 52 of the chamber 51 of the sputtering apparatus 5. In this state, the disc-shaped bracket 42 is
Is closed, and the disk-shaped base 11 is positioned on the ring-shaped holder 64 in the chamber 51. Then, when the suction of the rubber pads 43, 43 is released (nitrogen or the like is sealed in the suction line), the disc-shaped base 11 is
4 is placed on the step 63.
【0032】つぎに、チャンバー51内の回転軸61を
180度回転して、円盤型基体11の載ったホルダー6
4を成膜室54と対面する位置に移動する。なお、上記
ブラケット42により円形窓孔52を閉塞した後、チャ
ンバー51内および成膜室54内は排気通路55を通じ
排気し減圧させる。ついで、シリンダ装置84を動作し
てシャフト83を上昇させると、シャフト83先端のセ
ンターブラケット81のテーパー状の先頭部87がホル
ダー64上のドーナツ状円盤型基体11の中央部の孔1
2内に侵入していくとともに後ろ側のアウターブラケッ
ト82も上昇して、先端の当接部89が円盤型基体11
の周縁部14と当接し、両ブラケット81,82が共働
して円盤型基体11をホルダー64上から押し上げる。Next, the rotating shaft 61 in the chamber 51 is rotated by 180 degrees, and the holder 6 on which the disc-shaped base 11 is placed is placed.
4 is moved to a position facing the film forming chamber 54. After the circular window 52 is closed by the bracket 42, the inside of the chamber 51 and the inside of the film forming chamber 54 are exhausted through an exhaust passage 55 to reduce the pressure. Next, when the shaft device 83 is moved up by operating the cylinder device 84, the tapered head portion 87 of the center bracket 81 at the tip of the shaft 83 makes the hole 1 at the center portion of the donut-shaped disk-shaped base 11 on the holder 64.
2 and the outer bracket 82 on the rear side also rises, and the abutting portion 89 at the front end is
And the brackets 81 and 82 cooperate to push up the disc-shaped base 11 from above the holder 64.
【0033】そして、この両ブラケット81,82によ
って中心の孔12および周縁部14に接して押し上げ保
持された円盤型基体11は、反対面の中央部が上方にあ
るセンターマスク71の当接部72に、また、周縁部1
4がアウターマスク73の当接部74に押し付けられ
る。すなわち、円盤型基体11はその中央部および周縁
部14が両側面から挟み押圧され湾曲することなく水平
状態に保持される。このとき、両ブラケット81,82
はそれぞれ独立したばね部材85,86を介し設けられ
ているので、それぞれの押圧力を吸収して水平に保持さ
せることができる。The disc-shaped base 11 pushed up and held by the brackets 81 and 82 in contact with the center hole 12 and the peripheral edge portion 14 has a contact portion 72 of a center mask 71 having a central portion on the opposite surface located above. And the periphery 1
4 is pressed against the contact portion 74 of the outer mask 73. That is, the disc-shaped base 11 is held in a horizontal state without being curved by the central portion and the peripheral portion 14 being pinched and pressed from both side surfaces. At this time, both brackets 81, 82
Are provided via independent spring members 85 and 86, respectively, so that the respective pressing forces can be absorbed and held horizontally.
【0034】この状態でチャンバー51内および成膜室
54内の排気がすすみ所定の真空度に達したら、マグネ
トロンスパッタリング装置7を作動して被膜材料である
アルミニウムをスパッターさせる。このスパッターによ
り飛散したアルミニウム粒子は、主として円盤型基体1
1の表面、センターマスク71の外表面やアウターマス
ク73の表面に被着され、これらに所定膜厚のアルミニ
ウム被膜2が形成できる。When the exhaust in the chamber 51 and the film forming chamber 54 reaches a predetermined degree of vacuum in this state, the magnetron sputtering device 7 is operated to sputter aluminum as a coating material. The aluminum particles scattered by this sputtering are mainly
1, the outer surface of the center mask 71 and the surface of the outer mask 73, and an aluminum film 2 having a predetermined thickness can be formed thereon.
【0035】このスパッタリングが終了したら、シリン
ダ装置84を動作してシャフト83を下降させると、円
盤型基体11を保持しているインナーブラケット81お
よびアウターブラケット82も下降し、途中のホルダー
64部を通過のとき円盤型基体11の周縁部14が段部
63に引っ掛かって、円盤型基体11はこの段部63上
に載置される。When the sputtering is completed, the cylinder device 84 is operated to lower the shaft 83, and the inner bracket 81 and the outer bracket 82 holding the disk-shaped base 11 are also lowered, and pass through the holder 64 partway. At this time, the peripheral portion 14 of the disc-shaped base 11 is hooked on the step 63, and the disc-shaped base 11 is placed on the step 63.
【0036】そして、回転軸61を180度回転して、
円盤型基体11の載ったホルダー64を図1において右
方に移動するとともに排気を止め排気通路55を通じて
チャンバー51内に窒素などを封入する。このチャンバ
ー51内が大気圧状態になったら、チャンバー51の円
形窓孔52上にあるブラケット42のゴムパッド43,
43を真空系につなぎホルダー64上にある円盤型基体
11を吸引させる。Then, the rotation shaft 61 is rotated by 180 degrees,
The holder 64 on which the disk-shaped base 11 is placed is moved rightward in FIG. 1, the exhaust is stopped, and nitrogen or the like is sealed in the chamber 51 through the exhaust passage 55. When the inside of the chamber 51 reaches the atmospheric pressure state, the rubber pad 43 of the bracket 42 on the circular window hole 52 of the chamber 51,
43 is connected to a vacuum system, and the disk-shaped substrate 11 on the holder 64 is sucked.
【0037】つぎに、トランスファー装置4の回転軸4
1を上昇させ、たとえば図1の仮想線の位置まで来たら
回転軸41を180度回転し、ここでゴムパッド43,
43の真空状態を大気圧に切替えると円盤型基体11の
保持が解かれ、アルミニウム被膜2を形成した円盤型基
体11を取出すことができる。Next, the rotating shaft 4 of the transfer device 4
1 and, for example, when it reaches the position indicated by the imaginary line in FIG. 1, the rotation shaft 41 is rotated by 180 degrees.
When the vacuum state of 43 is changed to the atmospheric pressure, the holding of the disc-shaped base 11 is released, and the disc-shaped base 11 on which the aluminum coating 2 is formed can be taken out.
【0038】なお、この後トランスファー装置4を下降
させてコンベヤー3上の新たな円盤型基体11をゴムパ
ッド43,43で吸引して、スパッタリング装置5に送
り上述した作業を繰り返し行う。After that, the transfer device 4 is lowered, a new disk-shaped substrate 11 on the conveyor 3 is sucked by the rubber pads 43, 43, sent to the sputtering device 5, and the above-described operation is repeated.
【0039】上述した装置および方法でスパッタリング
が行われたドーナツ状円盤型基体11は、その中央部お
よび周縁部14が両側面からマスク71,72等で挟み
押圧されて、そり等の湾曲することなく水平状態に保持
された状態でスパッターされるので、被膜2形成の境界
部が明確になり、被膜2がはみでるぼけ等の発生がない
とともに基体1の湾曲がないので擦り傷の発生もなく、
特性的にも外観的にも向上したCD1を作り出すことが
できた。The doughnut-shaped disk-shaped substrate 11, which has been sputtered by the above-described apparatus and method, has its central portion and its peripheral portion 14 sandwiched and pressed by masks 71, 72, etc., from both side surfaces, so that it is curved, such as warped. Sputtering is performed in a state where the coating 2 is formed in a horizontal state, and the boundary of the formation of the coating 2 becomes clear.
CD1 with improved characteristics and appearance could be produced.
【0040】上記のセンターブラケット81、アウター
ブラケット82、センターマスク71およびアウターマ
スク73を用いてアルミニウム被膜2を形成した図4に
示すCD1は、中央部の被膜非形成部の直径Dが40m
m、周縁部14の端面からの被膜非形成部幅Wが1mm
で、境界がはっきりしていて被膜2にぼけ等の発生は見
られなかった。The CD 1 shown in FIG. 4 in which the aluminum coating 2 is formed using the center bracket 81, the outer bracket 82, the center mask 71 and the outer mask 73 shown in FIG.
m, the width W of the non-coated portion from the end face of the peripheral portion 14 is 1 mm
The boundary was clear and no blurring or the like was observed in the coating 2.
【0041】なお、本発明は上記実施の形態に限らな
い。たとえば、被膜形成の対象物はCDに限らず、LD
(レーザーディスク)、DVD(デジタルビデオディス
ク)、MD(ミニディスク)やMO(マグネットオプチ
カル)などの製造にも適用が可能である。The present invention is not limited to the above embodiment. For example, the object of film formation is not limited to CD,
(Laser disk), DVD (digital video disk), MD (mini disk), MO (magnet optical), and the like.
【0042】また、上記実施の形態では被膜の形成をス
パッタリングによる場合について述べたが、スパッタリ
ングに限らず、真空中で被膜形成を行なう真空蒸着やイ
オンプレーティングによる方法や装置を適用することが
できる。その他、装置各部の詳細構成も実施の形態に記
載したものに限らない。また、作業は円盤型基体を水平
に保持して被膜の形成を上方より行ったが、上方からに
限らず下方からでもよく、さらに、円盤型基体を垂直に
保持して被膜の形成を行ってもよい。In the above embodiment, the case where the film is formed by sputtering has been described. However, the present invention is not limited to sputtering, and a method and apparatus by vacuum deposition or ion plating for forming a film in a vacuum can be applied. . In addition, the detailed configuration of each unit of the apparatus is not limited to that described in the embodiment. In addition, the work was performed from above by holding the disc-shaped base horizontally, but may be performed not only from above but also from below, and further, by holding the disc-shaped base vertically and forming the coating. Is also good.
【0043】さらに、被膜材料もアルミニウム(Al)
のほか金(Au)、銀(Ag)、銅(Cu)、ケイ素
(Si)などの被膜形成を行うことができる。Further, the coating material is aluminum (Al).
In addition, a film of gold (Au), silver (Ag), copper (Cu), silicon (Si), or the like can be formed.
【0044】[0044]
【発明の効果】本発明の請求項1ないし請求項3の発明
によれば、円盤型基体を中央部および外端部で真直に保
持して均一な被膜を所定範囲に精度高く形成できる。ま
た、基体を弾性的に保持しているので基体の厚さや被膜
形成材料が変わっても真直な保持が可能であり、円盤型
基体がそり等湾曲したり湾曲から元に戻る過程で起こる
擦り傷の発生を防止できる。According to the first to third aspects of the present invention, the disk-shaped substrate can be held straight at the center and the outer end, and a uniform coating can be formed in a predetermined range with high accuracy. In addition, since the base is held elastically, it can be held straight even if the thickness of the base or the film-forming material changes, and there is no abrasion that occurs when the disk-shaped base curves or returns from the curve. Occurrence can be prevented.
【0045】また、本発明の請求項4の発明によれば、
簡単な構成で円盤型基体の移し変えが容易に行える。According to the invention of claim 4 of the present invention,
The transfer of the disk-shaped substrate can be easily performed with a simple configuration.
【0046】さらに、本発明の請求項5の発明によれ
ば、簡単な構成で円盤型基体の真直度を高めることがで
き、装置コストを低減できる。Further, according to the fifth aspect of the present invention, the straightness of the disk-shaped base can be increased with a simple structure, and the cost of the apparatus can be reduced.
【0047】さらに、本発明の請求項6の発明によれ
ば、CD(基体の厚さ1.2mm)やDVD(基体の厚
さ0.6mm)を、装置の切り替えなく、また、あって
も簡単な調整で容易に行わせることができる。Further, according to the invention of claim 6 of the present invention, a CD (substrate thickness 1.2 mm) or a DVD (substrate thickness 0.6 mm) can be used without switching the apparatus. It can be easily performed with a simple adjustment.
【図1】本発明のスパッタリング装置の実施の形態を示
す説明図である。FIG. 1 is an explanatory view showing an embodiment of a sputtering apparatus of the present invention.
【図2】本発明の要部を拡大して示す一部断面正面図で
ある。FIG. 2 is an enlarged partial cross-sectional front view showing a main part of the present invention.
【図3】本発明の要部を上面から見た説明図で、(a)
はホルダー、(b)はアウターマスクを示す。FIG. 3 is an explanatory view of a main part of the present invention as viewed from above, and FIG.
Indicates a holder, and (b) indicates an outer mask.
【図4】コンパクトディスク(CD)の正面図である。FIG. 4 is a front view of a compact disc (CD).
【図5】従来のスパッタリング装置の一部を示す一部断
面正面図である。FIG. 5 is a partially sectional front view showing a part of a conventional sputtering apparatus.
1:コンパクトディスク(CD) 11:ドーナツ状円盤型基体 12:中心の孔 14:周縁部 2:被膜 5:スパッタリング装置 51:チャンバー 54:成膜室 63:段部 64:ホルダー 71:センターマスク 73:アウターマスク 81:センターブラケット 83:シャフト 84:シリンダ装置 1: compact disk (CD) 11: donut-shaped disc-shaped substrate 12: center hole 14: peripheral portion 2: coating film 5: sputtering device 51: chamber 54: film forming chamber 63: step portion 64: holder 71: center mask 73 : Outer mask 81 : Center bracket 83 : Shaft 84 : Cylinder device
Claims (5)
ナツ状円盤型基体の表面に被膜材料を飛散させてドーナ
ツ状の被膜を形成する成膜方法において、円盤型基体の
中央部および周縁部を表裏両面から押圧保持して被膜材
料を被着させることを特徴とする成膜方法。1. A film forming method for forming a donut-shaped film by scattering a film material on the surface of a donut-shaped disk-shaped substrate in a chamber connected to a decompression device, wherein a center portion and a peripheral portion of the disk-shaped substrate are front and back. A film forming method, wherein a film material is applied by pressing and holding from both sides.
ダーにドーナツ状円盤型基体の周縁部を保持させる工程
と;このホルダー内を上昇させたセンターブラケットの
先端部をドーナツ状円盤型基体の孔内に挿入してこの円
盤型基体をセンターブラケット上に載置させるととも
に、このセンターブラケットのシャフトに設けたアウタ
ーブラケットを円盤型基体の周縁部に当接させる工程
と;上記ブラケットを上昇させてドーナツ状円盤型基体
上面の中央部をセンターマスクに、また、周縁部をアウ
ターマスクに当接させる工程と;排気した上記チャンバ
ー内において被膜材料を飛散させてドーナツ状円盤型基
体の上面に被膜を形成する工程と;上記両ブラケットを
下降させてドーナツ状円盤型基体上面をマスクから外す
工程と;さらに、両ブラケットを下降してドーナツ状円
盤型基体をブラケットから離しホルダー上に載置する工
程と;上記ホルダー上に載置されたドーナツ状円盤型基
体を取り出す工程;とを具備していることを特徴とする
成膜方法。2. A step of holding a peripheral portion of the donut-shaped disc-shaped base by a holder in a chamber connected to the pressure reducing device; and a step of moving the tip of the center bracket raised inside the holder into a hole of the donut-shaped disc-shaped base. And placing the disc-shaped base on the center bracket, and contacting the outer bracket provided on the shaft of the center bracket with the periphery of the disc-shaped base; raising the bracket to a donut shape Contacting the center of the upper surface of the disk-shaped substrate with the center mask and the peripheral portion of the disk-shaped substrate against the outer mask; and forming a coating on the upper surface of the donut-shaped disk-shaped substrate by scattering the coating material in the evacuated chamber. Lowering the two brackets to remove the upper surface of the donut-shaped disc-shaped base from the mask; A step of moving the donut-shaped disk-shaped base body down from the bracket by lowering the bracket and mounting the same on a holder; and a step of taking out the donut-shaped disk-shaped base body mounted on the holder. Film forming method.
チャンバー内に設けられたドーナツ状円盤型基体を保持
するホルダーと;このホルダー内に進退自在に挿通さ
れ、先端部がドーナツ状円盤型基体の孔内に挿入される
とともに円盤型基体を保持するセンターブラケットと;
このセンターブラケットのシャフトに設けられた、ドー
ナツ状円盤型基体の端縁部に当接するアウターブラケッ
トと;上記センターブラケットおよびアウターブラケッ
トを上記シャフトに弾性的に支持するばね部材と;上記
センターブラケットに対応して設けられたドーナツ状円
盤型基体の中央部を覆うセンターマスクと;上記アウタ
ーブラケットに対応して設けられたドーナツ状円盤型基
体の周縁部を覆うアウターマスクと;上記センターマス
クおよびアウターマスクの配設側に設けられた被膜材料
を飛散させる装置と;を具備していることを特徴とする
成膜装置。3. A chamber connected to a decompression device; a holder provided in the chamber for holding a donut-shaped disc-shaped base; and a tip of a donut-shaped disc-shaped base inserted into the holder so as to be able to advance and retreat. A center bracket inserted into the hole and holding the disc-shaped base;
An outer bracket provided on a shaft of the center bracket and in contact with an edge of a donut-shaped disc-shaped base; a spring member for elastically supporting the center bracket and the outer bracket on the shaft; A center mask that covers a central portion of the donut-shaped disk-shaped substrate provided as described above; an outer mask that covers a peripheral portion of the donut-shaped disk-shaped substrate provided corresponding to the outer bracket; and the center mask and the outer mask. And a device provided on the disposition side for scattering the coating material.
型基体の外径より大きく、内周縁部に複数個の突出した
凸部が形成され、また、アウターブラケットの外周径は
ドーナツ状円盤型基体の外径より大きく、周縁部に複数
個の凹部が形成されていて、両者の凹凸部が合致して互
いに接触することなく挿通できることを特徴とする請求
項3に記載の成膜装置。4. The inner diameter of the holder is larger than the outer diameter of the donut-shaped disk-shaped base, a plurality of protruding protrusions are formed on the inner peripheral edge, and the outer diameter of the outer bracket is a donut-shaped disk. 4. The film forming apparatus according to claim 3, wherein a plurality of recesses are formed in a peripheral portion of the substrate, the recesses being larger than an outer diameter of the base, and the two concave and convex portions can be inserted without contacting each other.
ブラケットは、それぞれ独立して作用するばね部材を備
えていることを特徴とする請求項3に記載の成膜装置。5. The film forming apparatus according to claim 3, wherein each of the center bracket and the outer bracket includes a spring member that operates independently.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20220296A JP3466387B2 (en) | 1996-07-31 | 1996-07-31 | Film forming method and film forming apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20220296A JP3466387B2 (en) | 1996-07-31 | 1996-07-31 | Film forming method and film forming apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1046340A true JPH1046340A (en) | 1998-02-17 |
| JP3466387B2 JP3466387B2 (en) | 2003-11-10 |
Family
ID=16453663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20220296A Expired - Fee Related JP3466387B2 (en) | 1996-07-31 | 1996-07-31 | Film forming method and film forming apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3466387B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150012501A (en) * | 2013-07-25 | 2015-02-04 | 삼성디스플레이 주식회사 | Sputtering apparatus and method for forming thin film using the same |
| CN106893996A (en) * | 2017-04-18 | 2017-06-27 | 东旭科技集团有限公司 | The voltage biasing structure and its clamping device of vertical use in magnetron sputtering coating |
| CN115354280A (en) * | 2022-09-19 | 2022-11-18 | 陕西理工大学 | Film coating jig for semiconductor chip |
-
1996
- 1996-07-31 JP JP20220296A patent/JP3466387B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150012501A (en) * | 2013-07-25 | 2015-02-04 | 삼성디스플레이 주식회사 | Sputtering apparatus and method for forming thin film using the same |
| CN106893996A (en) * | 2017-04-18 | 2017-06-27 | 东旭科技集团有限公司 | The voltage biasing structure and its clamping device of vertical use in magnetron sputtering coating |
| CN106893996B (en) * | 2017-04-18 | 2019-03-15 | 东旭科技集团有限公司 | Bias voltage structure for vertical magnetron sputtering coating and its clamping device |
| CN115354280A (en) * | 2022-09-19 | 2022-11-18 | 陕西理工大学 | Film coating jig for semiconductor chip |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3466387B2 (en) | 2003-11-10 |
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