JPH10501741A - ウエハー上に制御された粒子付着を施すための方法と装置 - Google Patents
ウエハー上に制御された粒子付着を施すための方法と装置Info
- Publication number
- JPH10501741A JPH10501741A JP8502554A JP50255496A JPH10501741A JP H10501741 A JPH10501741 A JP H10501741A JP 8502554 A JP8502554 A JP 8502554A JP 50255496 A JP50255496 A JP 50255496A JP H10501741 A JPH10501741 A JP H10501741A
- Authority
- JP
- Japan
- Prior art keywords
- particles
- chamber
- wafer
- aerosol
- deposition chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
- B05B12/02—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling time, or sequence, of delivery
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
- B05D1/12—Applying particulate materials
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Electrostatic Spraying Apparatus (AREA)
- Coating Apparatus (AREA)
- Formation Of Insulating Films (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1. ウエハー上に向けられた付着チャンバー中への清浄ガス流れを供給・保 持して、付着チャンバーから望ましくない粒子をパージする工程; 供給源からの粒子を含有したガス流れを、付着チャンバー中のウエハー上に 、供給源からの所望数の粒子をウエハー上に付着させる時間にわたって供給し、 次いで供給源からの粒子を含有したガス流れを供給停止する工程;および 供給源からの粒子を含有したガス流れを供給停止した後、付着チャンバーか らウエハーを取り出す前に、チャンバー中への清浄ガス流れの供給をある選定し た時間にわたって保持する工程; を含む、付着チャンバー中のウエハー上に供給源からの粒子を付着させる方法。 2. 粒子の導入を制御するための、付着チャンバー中に導入される供給源か らの粒子をカウントする工程を含む、請求の範囲第1項に記載の方法。 3. 供給源からの粒子が静電荷を搬送し、付着チャンバー中において帯電粒 子を付着させるために電場が使用される、請求の範囲第1項に記載の方法。 4. 前記方法の工程中、付着チャンバー中への全ガス流れを実質的に一定の 容量に制御する工程を含む、請求の範囲第1項に記載の方法。 5. エーロゾル流れを清浄ガス流れに加える工程;およびエーロゾル流れを 加えた後のチャンバー中への全ガス流れを制御して、付着チャンバー中へのガス 流れの容量を、エーロゾル流れを加える前のチャンバー中へのガス流れの容量と 実質的に同じ容量に保持する工程;を含む、請求の範囲第1項に記載の方法。 6. 供給源からの粒子を含んだガス流れを受け入れる粒子選別器を組み込み 、供給源からの粒子を、付着チャンバー中に導入する前に選別する工程を含む、 請求の範囲第1項に記載の方法。 7. 前記選別工程が、2種のガス、すなわち清浄ガス流れで構成されたガス と粒子を含んだ流れで構成されたガスの薄層状流れを生成させる静電選別器を使 用すること、および粒子に静電荷を付与して、粒子を、粒子を含んだ流れから清 浄ガス流れを通して付着チャンバー中に移動させることを含む、請求の範囲第6 項に記載の方法。 8. 内部容積、入口開口、チャンバーからの排出出口、およびウエハーを入 口から出口に向かう流れ通路中に支持するための、チャンバー中の支持体、を有 する付着チャンバー; 前記入口に連結された清浄ガス流れの供給源; 既知コンシステンシーの粒子を含んだエーロゾル流れを付着チャンバー中に 導入するよう連結されたエーロゾル発生器;および 付着チャンバー中へのエーロゾルの導入を制御し、エーロゾル導入の前後に 清浄ガス流れを保持するための制御装置; を含む、ウエハー上に材料を付着させるための装置。 9. 前記制御装置が、アトマイザー中への圧縮空気の流れを制御するための 、および引き続きアトマイザーから、前記入口への清浄ガス流れを搬送している ライン中へのエーロゾルの排出を制御するための弁を含む、請求の範囲第8項に 記載の装置。 10. 清浄ガス流れとエーロゾル流れの両方に連結された、付着チャンバーに 流入する粒子を制御するための静電スイッチを含む、請求の範囲第8項に記載の 装置。 11. 前記清浄ガス流れが前記電極に沿って移動するときに、前記清浄ガス流 れを取り囲む薄層状のエーロゾル流れを供給するためのバッフル、および一方の 端部と反対側の端部にて円筒状ハウジングに連結された、付着チャンバーに対す る開口を含み、このとき清浄ガス流れとエーロゾル流れが円筒状ハウジングに導 入され、円筒状ハウジング中において、清浄ガス流れを横切ってエーロゾル流れ からの粒子の通過を引き起こすよう、電極に電圧が加えられる、請求の範囲第8 項に記載の装置。 12. 電極によって引きつけられた粒子だけの流入を可能にし、そして付着チ ャンバー中への排出を可能にするための、前記入口に対する円筒状ハウジング開 口に設けられた制御スリットを含む、請求の範囲第11項に記載の装置。 13. 付着チャンバーに流入する粒子の付着に影響を及ぼすよう電場を供給す るための電源を含み、このとき前記電源は付着チャンバー中の金属電極に連結さ れている、請求の範囲第8項に記載の装置。 14. 清浄ガス流れを付着チャンバー中に供給して、付着チャンバーから望ま しくない粒子をパージする工程; 清浄ガス流れを保持しながら、ウエハーをチャンバー中に導入する工程; ウエハーを導入した後に、供給源からの所望数の粒子がウエハーに付着する まで、供給源からの粒子を含んだガス流れを付着チャンバーに供給し、次いで供 給源からの粒子を含んだガス流れを供給停止する工程;および 供給源からの粒子を含有したガス流れを供給停止した後、付着チャンバーか らウエハーを取り出す前に、チャンバー中への清浄ガス流れの供給をある選定し た時間にわたって保持する工程; を含む、付着チャンバー中において供給源からの粒子を付着させる方法。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/263,128 | 1994-06-21 | ||
| US08/263,128 US5534309A (en) | 1994-06-21 | 1994-06-21 | Method and apparatus for depositing particles on surfaces |
| PCT/US1995/007790 WO1995035167A1 (en) | 1994-06-21 | 1995-06-19 | Method and apparatus for controlled particle deposition on wafers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10501741A true JPH10501741A (ja) | 1998-02-17 |
| JP3947217B2 JP3947217B2 (ja) | 2007-07-18 |
Family
ID=23000492
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50255496A Expired - Lifetime JP3947217B2 (ja) | 1994-06-21 | 1995-06-19 | ウエハー上に制御された粒子付着を施すための方法と装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5534309A (ja) |
| EP (1) | EP0766604B1 (ja) |
| JP (1) | JP3947217B2 (ja) |
| KR (1) | KR100359886B1 (ja) |
| DE (1) | DE69528266T2 (ja) |
| WO (1) | WO1995035167A1 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2025515338A (ja) * | 2022-04-29 | 2025-05-14 | ユニサース・リミテッド | 複数の液体からどれがウエハ表面に粒子状不純物を堆積させる危険性が最も高いかを判定する方法 |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6110531A (en) * | 1991-02-25 | 2000-08-29 | Symetrix Corporation | Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition |
| US5858099A (en) | 1996-04-09 | 1999-01-12 | Sarnoff Corporation | Electrostatic chucks and a particle deposition apparatus therefor |
| US5846595A (en) * | 1996-04-09 | 1998-12-08 | Sarnoff Corporation | Method of making pharmaceutical using electrostatic chuck |
| US6116184A (en) * | 1996-05-21 | 2000-09-12 | Symetrix Corporation | Method and apparatus for misted liquid source deposition of thin film with reduced mist particle size |
| WO1997044818A1 (en) * | 1996-05-21 | 1997-11-27 | Symetrix Corporation | Method and apparatus for misted liquid source deposition of thin films with increased yield |
| US6544599B1 (en) * | 1996-07-31 | 2003-04-08 | Univ Arkansas | Process and apparatus for applying charged particles to a substrate, process for forming a layer on a substrate, products made therefrom |
| US5916640A (en) | 1996-09-06 | 1999-06-29 | Msp Corporation | Method and apparatus for controlled particle deposition on surfaces |
| DE19737363C1 (de) * | 1997-08-27 | 1999-03-11 | Siemens Ag | Kalibrierwafer |
| US6003526A (en) * | 1997-09-12 | 1999-12-21 | Taiwan Semiconductor Manufacturing Company, Ltd | In-sit chamber cleaning method |
| US6149774A (en) | 1998-06-10 | 2000-11-21 | Delsys Pharmaceutical Corporation | AC waveforms biasing for bead manipulating chucks |
| US6063194A (en) * | 1998-06-10 | 2000-05-16 | Delsys Pharmaceutical Corporation | Dry powder deposition apparatus |
| US6923979B2 (en) * | 1999-04-27 | 2005-08-02 | Microdose Technologies, Inc. | Method for depositing particles onto a substrate using an alternating electric field |
| US7515264B2 (en) * | 1999-06-15 | 2009-04-07 | Tokyo Electron Limited | Particle-measuring system and particle-measuring method |
| WO2001084238A1 (en) * | 2000-05-04 | 2001-11-08 | Btg International Limited | Nanostructures |
| US7145653B1 (en) | 2000-06-09 | 2006-12-05 | Advanced Micro Devices, Inc. | In situ particle monitoring for defect reduction |
| TW471010B (en) | 2000-09-28 | 2002-01-01 | Applied Materials Inc | Wafer cleaning equipment |
| US6607597B2 (en) | 2001-01-30 | 2003-08-19 | Msp Corporation | Method and apparatus for deposition of particles on surfaces |
| US6746539B2 (en) * | 2001-01-30 | 2004-06-08 | Msp Corporation | Scanning deposition head for depositing particles on a wafer |
| US7371467B2 (en) | 2002-01-08 | 2008-05-13 | Applied Materials, Inc. | Process chamber component having electroplated yttrium containing coating |
| US7008206B2 (en) * | 2002-06-24 | 2006-03-07 | 3D Systems, Inc. | Ventilation and cooling in selective deposition modeling |
| US7317521B2 (en) * | 2003-09-18 | 2008-01-08 | Micron Technology, Inc. | Particle detection method |
| US7882799B2 (en) * | 2004-10-18 | 2011-02-08 | Msp Corporation | Method and apparatus for generating charged particles for deposition on a surface |
| KR100661391B1 (ko) | 2005-07-15 | 2006-12-27 | 주식회사 실트론 | 표준 웨이퍼 제조용 파티클 증착장치 |
| DE102008047955A1 (de) * | 2008-09-18 | 2010-04-01 | Otto Hauser | Verfahren und Vorrichtung zur Erzeugung von Halbleiterschichten |
| JP5398234B2 (ja) * | 2008-11-13 | 2014-01-29 | 東京エレクトロン株式会社 | 異物検出方法、装置及び記憶媒体 |
| DE102013005010B4 (de) * | 2013-03-22 | 2016-03-31 | Helmholtz Zentrum München Deutsches Forschungszentrum Für Gesundheit Und Umwelt (Gmbh) | Vorrichtung und Verfahren zur Benetzung einer Probe mit einem Aerosol |
| DE102013113169A1 (de) * | 2013-11-28 | 2015-05-28 | Karlsruher Institut für Technologie | Vorrichtung und Verfahren zur Herstellung von Partikelschichten und deren Verwendung |
| JP6112130B2 (ja) * | 2015-03-25 | 2017-04-12 | トヨタ自動車株式会社 | 静電ノズル、吐出装置及び半導体モジュールの製造方法 |
| KR20180061136A (ko) * | 2015-06-19 | 2018-06-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 적층 제조에서의 파우더의 선택적 퇴적 |
| US20160368056A1 (en) * | 2015-06-19 | 2016-12-22 | Bharath Swaminathan | Additive manufacturing with electrostatic compaction |
| CN109671655B (zh) * | 2018-12-27 | 2023-09-05 | 广东晶科电子股份有限公司 | 一种led荧光粉沉降控制装置及方法 |
| JP7517277B2 (ja) * | 2021-07-14 | 2024-07-17 | トヨタ自動車株式会社 | 電極製造装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3707672A1 (de) * | 1987-03-10 | 1988-09-22 | Sitesa Sa | Epitaxieanlage |
| US4928537A (en) * | 1988-12-06 | 1990-05-29 | Regents Of The University Of Minnesota | System for airborne particle measurement in a vacuum |
| US5194297A (en) * | 1992-03-04 | 1993-03-16 | Vlsi Standards, Inc. | System and method for accurately depositing particles on a surface |
| US5306345A (en) * | 1992-08-25 | 1994-04-26 | Particle Solutions | Deposition chamber for deposition of particles on semiconductor wafers |
-
1994
- 1994-06-21 US US08/263,128 patent/US5534309A/en not_active Expired - Lifetime
-
1995
- 1995-06-19 WO PCT/US1995/007790 patent/WO1995035167A1/en not_active Ceased
- 1995-06-19 JP JP50255496A patent/JP3947217B2/ja not_active Expired - Lifetime
- 1995-06-19 EP EP95923984A patent/EP0766604B1/en not_active Expired - Lifetime
- 1995-06-19 DE DE69528266T patent/DE69528266T2/de not_active Expired - Lifetime
- 1995-06-19 KR KR1019960706847A patent/KR100359886B1/ko not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2025515338A (ja) * | 2022-04-29 | 2025-05-14 | ユニサース・リミテッド | 複数の液体からどれがウエハ表面に粒子状不純物を堆積させる危険性が最も高いかを判定する方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE69528266T2 (de) | 2003-06-05 |
| JP3947217B2 (ja) | 2007-07-18 |
| KR970703204A (ko) | 1997-07-03 |
| WO1995035167A1 (en) | 1995-12-28 |
| EP0766604A1 (en) | 1997-04-09 |
| US5534309A (en) | 1996-07-09 |
| DE69528266D1 (de) | 2002-10-24 |
| KR100359886B1 (ko) | 2002-12-18 |
| EP0766604B1 (en) | 2002-09-18 |
| EP0766604A4 (en) | 1999-06-23 |
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