JPH1056044A - Wafer ID reader and method of manufacturing semiconductor integrated circuit device using the same - Google Patents

Abstract

(57) [Summary] [PROBLEMS] To read a wafer ID at high speed and with high accuracy. SOLUTION: A side surface 1a of a semiconductor wafer 1 has a wafer ID.
A wafer cassette 2 for accommodating a semiconductor wafer 1 on which a wafer is formed, an ID detection unit 3 for reading the wafer ID of the semiconductor wafer 1 contained in the wafer cassette 2 without taking it out of the wafer cassette 2, and a detection by the ID detection unit 3 A recognition unit 4 for recognizing the semiconductor wafer 1 on which processing such as inspection is performed based on the result; a cassette elevator 5 supporting the wafer cassette 2; an elevator drive motor 6 for moving the cassette elevator 5 up and down; The control unit 7 controls the driving, and reads the wafer ID of the semiconductor wafer 1 stored in the wafer cassette 2 without taking it out of the wafer cassette 2.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing technique, and more particularly, to a wafer manufacturing method formed on a side surface of a semiconductor wafer.
The present invention relates to a wafer ID reader for detecting D and a method of manufacturing a semiconductor integrated circuit device using the same.

[0002]

2. Description of the Related Art The technology described below studies the present invention,
Upon completion, they were examined by the inventor, and the outline is as follows.

In a semiconductor manufacturing process, it is essential to find out the cause of a defect early and feed it back to a process and a semiconductor manufacturing apparatus in order to maintain or improve the yield.

[0004] To this end, it is important to find a defect by a semiconductor inspection apparatus and analyze the inspection data. For example, defects or foreign matters such as electrical shorts and disconnections generated in the process are automatically inspected by a visual inspection apparatus using image processing or a foreign substance inspection apparatus using dark field illumination by laser light.

Inspections are performed at the end of each of the main processes. In order to determine, for example, in which process the number of foreign particles is large, it is necessary to compare the increase in the number of foreign particles in each process. Good. However, in order to make this determination, it is necessary to always inspect the same semiconductor wafer as a monitor wafer in each process inspection.

For this purpose, it is necessary to recognize whether the semiconductor wafer is a monitor wafer before the inspection and selectively inspect the semiconductor wafer. Here, the recognition of the semiconductor wafer is performed by an ID recognition device by visual observation or image processing using a wafer ID drawn on the wafer surface.

Thereafter, the wafer ID is manually or automatically input to the semiconductor inspection apparatus, and is sent to an analysis system for analyzing the cause of the defect together with data on the coordinates and size of the defect / contamination.

Here, the wafer ID drawn on the wafer surface
An example of a semiconductor inspection device that recognizes the following will be described.

First, a wafer cassette, which is a wafer supporting portion for supporting a semiconductor wafer, is mounted on an elevator for raising and lowering the elevator, and the elevator is driven vertically by an elevator drive motor. Further, the transfer arm moves or rotates in the left / right and up / down directions, takes out the semiconductor wafer from the wafer cassette, and moves it to the pre-alignment stage.

Thereafter, the pre-alignment stage rotates, and an orientation flat (hereinafter, abbreviated as an orientation flat) of the semiconductor wafer is detected by an orientation flat detector. Further, the pre-alignment stage stops its rotation at a position where the wafer ID drawn near the orientation flat or on the side of the wafer opposite to the orientation flat enters the field of view of the imaging camera.

As a result, the imaging camera captures the image of the wafer ID, and the recognition unit recognizes the wafer ID.
Further, the information of the recognized wafer ID is sent to the semiconductor inspection device. The semiconductor inspection apparatus performs an appearance inspection and a foreign substance inspection of the semiconductor wafer in each step of the semiconductor manufacturing, and transfers the number of defects and its position information to the analysis apparatus together with the information of the wafer ID.

Next, an analysis method in the analysis device will be described.

First, the analysis apparatus searches for defect coordinate data of a predetermined process A and defect coordinate data of a predetermined process B on the same semiconductor wafer by the wafer ID (here, the process B is performed after the process A). Step), for example, as disclosed in
As disclosed in Japanese Patent No. 44054, a defect whose defect coordinates match each other within a predetermined allowable range between the respective steps is obtained, and further, these defects are deleted, so that a defect newly generated in the step B is determined. Defect coordinate data can be obtained.

By this processing, the analysis apparatus provides the map showing the defect coordinate data of the defect newly generated in the step B, and the breakdown of the number of defects newly generated in each step and the number of defects in the previous step. Display a bar graph that indicates

As a result, workers involved in semiconductor manufacturing
Looking at these displays, you can quickly identify defective processes,
Give feedback to the process.

[0016]

However, in the above technique, the wafer ID of the semiconductor wafer to be inspected is
In order to identify the semiconductor wafer, it is necessary to take out the semiconductor wafer from the wafer cassette and position the semiconductor wafer so that the wafer ID is within the field of view of the imaging camera.

For example, when only the same semiconductor wafer is selected and inspected for tracking the change in the number of defects between processes, the semiconductor wafer is taken out of the wafer cassette and subjected to recognition processing. The operation of returning the semiconductor wafer to the cassette must be repeated until the semiconductor wafer having the wafer ID to be inspected is taken out.

Since the order of the positions of the semiconductor wafers in the wafer cassette changes each time the semiconductor wafer is processed by the semiconductor manufacturing apparatus, it is necessary to confirm the wafer ID.

However, the above-described operation of confirming the wafer ID takes time, and the wafer ID is determined by the imaging camera.
Therefore, a mechanism for moving the semiconductor wafer to a position where can be confirmed and a drive control unit thereof are required.

As a result, there is a problem that the inspection throughput is reduced, and when the recognition is performed by using the device dedicated to the wafer ID recognition, the device cost and the floor space of the device are increased.

Furthermore, since the wafer ID is drawn on the surface of the wafer, the contrast of the wafer ID on the base becomes lower as the film ID and the etching process are performed.

In order to convert a specific region of the semiconductor wafer formed of silicon (Si) into a semiconductor, a process of implanting elements such as phosphorus and boron as ions into the semiconductor wafer is performed. The angle is a predetermined angle with respect to the crystal direction of silicon. As a result, it is necessary to place the semiconductor wafer at a predetermined angle during ion implantation.

Therefore, in order to indicate the crystal direction of the semiconductor wafer, an orientation flat formed by cutting out an arc in a direction corresponding to the crystal direction of the circular semiconductor wafer is provided.

The orientation flat is used to determine the direction in which shots are arranged in the exposure apparatus. The orientation flat is determined by rotating the semiconductor wafer prior to exposure and detecting the orientation flat to determine the support direction of the semiconductor wafer during exposure. I do.

However, in the vicinity of such a notch (orientation flat), the thickness of the insulating film or the wiring film cannot be formed as specified, and there is a high probability that a defective semiconductor chip is formed. Is a problem.

An object of the present invention is to provide a wafer ID reading device for reading a wafer ID with high speed and high accuracy, and a method of manufacturing a semiconductor integrated circuit device using the same.

It is another object of the present invention to provide a wafer ID reader which improves the yield of semiconductor chips and a method of manufacturing a semiconductor integrated circuit device using the same.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0029]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, a wafer ID reading device according to the present invention comprises a wafer support for supporting the semiconductor wafer having a wafer ID formed on a side surface of the semiconductor wafer, and a semiconductor support supported by the wafer support. I to read the wafer ID without moving it from
A D detection unit; and a recognition unit that recognizes a semiconductor wafer on which predetermined processing such as inspection is performed based on a detection result of the ID detection unit.

In the method of manufacturing a semiconductor integrated circuit device according to the present invention, a step of forming a wafer ID on a side surface of a semiconductor wafer, a step of reading the wafer ID of the semiconductor wafer having the wafer ID formed on the side surface, And a step of recognizing a semiconductor wafer to be subjected to a predetermined process by reading the data.

Thus, when reading the wafer ID of a semiconductor wafer supported by a wafer support such as a wafer cassette, the wafer ID can be read without moving the semiconductor wafer from the wafer support.

That is, when finding a semiconductor wafer to be subjected to a predetermined process, the semiconductor wafer is once taken out from a wafer support portion such as a wafer cassette, and after reading the wafer ID, the semiconductor wafer is returned to the wafer support portion, and the semiconductor device to be processed is determined. There is no need to repeat this operation until a semiconductor wafer is found.

As a result, the reading / recognition of the wafer ID of the semiconductor wafer supported by the wafer supporting portion can be speeded up, so that when processing such as inspection is performed on the semiconductor wafer, the throughput of the processing is increased. Can be improved.

In the method of manufacturing a semiconductor integrated circuit device according to the present invention, a group of a plurality of wafer IDs including a plurality of the wafer IDs is formed by being dispersed on the side surface of the semiconductor wafer.

Further, in the method of manufacturing a semiconductor integrated circuit device according to the present invention, the wafer ID may include a wafer number ID representing a number of the semiconductor wafer and a plurality of wafer IDs.
, And three types of wafer IDs: a section ID for dividing the plurality of wafer ID groups for each wafer ID group, and a crystal direction ID indicating a crystal direction of the semiconductor wafer.

[0037]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 is a conceptual diagram showing an embodiment of the structure of a wafer ID reading device according to the present invention. FIG. 2 is a diagram showing the structure of a semiconductor wafer on which a wafer ID to be read by the wafer ID reading device of the present invention is formed. 3A and 3B are diagrams illustrating an example of an embodiment, in which FIG. 3A is a perspective view, FIG. 3B is a plan view, FIG. 3C is an enlarged partial side view, and FIG. 4 is an enlarged partial perspective view showing an example of the present invention. FIG. 4 is a conceptual diagram showing an example of an embodiment of a structure of an ID forming apparatus for forming a wafer ID on the semiconductor wafer shown in FIG. 2, and FIG. 5 is a semiconductor wafer shown in FIG. FIG. 6 is a perspective view showing an example of an embodiment of a method for forming an orientation flat in FIG. 6, FIG. 6 is a flowchart showing an example of an embodiment of a semiconductor manufacturing process using a wafer ID reader according to the present invention, and FIG. Is a diagram showing an example of an embodiment of a defect data in the manufacturing method of the light of a semiconductor integrated circuit device, which is (a) the defect data coordinate map, (b) the defect data bar.

Note that the wafer ID reading apparatus of the present embodiment (see FIGS. 1 and 3) uses the wafer ID formed on the side surface 1a of the semiconductor wafer 1 as shown in FIG. ) Is read while stored.

In this embodiment, a case where the wafer ID is represented by a diffraction grating will be described.

The structure of the wafer ID reading device is as follows. A wafer cassette 2 which is a wafer support for accommodating and supporting the semiconductor wafer 1 having the wafer ID formed on the side surface 1a of the semiconductor wafer 1; An ID detector 3 for reading the supported semiconductor wafer 1 without taking out (moving) the semiconductor wafer 1 from the wafer cassette 2 and a semiconductor for performing a predetermined process such as an inspection based on a detection result of the ID detector 3 Recognition unit 4 for recognizing wafer 1
And a cassette elevator 5 supporting the wafer cassette 2
And an elevator drive motor 6 for raising and lowering the cassette elevator 5, and a control unit 7 for controlling the drive of the elevator drive motor 6.

Further, the basic configuration of the ID detection unit 3 is as follows: a semiconductor laser 3a as a light source for irradiating the wafer ID with laser light 3d (illumination light);
It comprises a number ID detector 3b (diffraction light detection means) and a section ID detector 3c (diffraction light detection means) for detecting a diffracted light 3e which is a reflected light formed by irradiating D.

Incidentally, the semiconductor laser 3a may be a light emitting diode or the like.

Further, in the present embodiment, FIG.
As shown in (c), the wafer ID is a wafer number ID10 representing the number of the semiconductor wafer 1 and a plurality of wafer ID groups 12 composed of a plurality of the wafer IDs.
Two types of wafers I and a section ID 11 for each D group 12
The case where D is provided will be described.

Here, the wafer number ID10 (wafer I
D) is like a “name” given to the semiconductor wafer 1 and represents, for example, the product or lot number.

A plurality of wafer numbers ID10 are formed over the entire periphery of the side surface 1a of the semiconductor wafer 1.

The section ID 11 (wafer ID) is formed at the forefront or last part of the wafer ID group 12 including a plurality of wafer numbers ID10.

That is, the wafer ID group 12 includes a wafer number ID10 and a section ID11.

Here, the semiconductor wafer 1 shown in FIG.
, One wafer ID group 12 has one section ID
11 and seven wafer number ID10 representing "1" and six wafer number ID10a representing "0".

In the present embodiment, a plurality of wafer ID groups 12 are dispersedly formed on the side surface 1 a of the semiconductor wafer 1.

That is, in the present embodiment, FIG.
As shown in (b), the side surface 1a of one semiconductor wafer 1
, 16 wafer ID groups 12 are dispersedly formed.

Note that two different types of wafer IDs (in this embodiment, wafer number ID10 and section ID1)
For 1), the wafer ID is formed by changing the pitch of the diffraction grating for each type.

That is, in the present embodiment, FIG.
As shown in (c), the diffraction grating of section ID11 is formed with a smaller pitch than the diffraction grating of wafer number ID10, thereby classifying the type of wafer ID.

Here, a method of forming the semiconductor wafer 1 shown in FIG. 2 and a method of forming a wafer ID on the side surface 1a of the semiconductor wafer 1 will be described with reference to FIGS.

In the present embodiment, when the orientation flat 1b shown in FIG. 5 is not formed on the semiconductor wafer 1 (the crystal orientation ID 17 instead of the orientation flat 1b (see FIG. 9).
Is formed), but the method of forming the semiconductor wafer 1 will be described including the case of forming the orientation flat 1b.

First, in the semiconductor manufacturing process shown in FIG. 6, a single crystal growth 30 of silicon (Si) is performed.
A silicon ingot 1c as shown in FIG.

Here, as shown in FIG. 5 (a), an ingot 1c of silicon (Si) is placed on the rotating stage 8a of the ID forming apparatus 8 shown in FIG. 4, and an X-ray 9 is applied to the surface of the ingot 1c. Is irradiated.

Thus, the crystal direction of silicon is examined using X-ray diffraction.

When forming the orientation flat 1b, the orientation flat 1b is cut in a predetermined direction and at a predetermined position in the state of the ingot 1c, as shown in FIG. 5B.

Further, the ingot 1c shown in FIG.
In FIG. 6, a crystal cutting 31 shown in FIG. 6 is performed, and thereafter, a polishing 32 is performed to perform a wafer formation 33 for forming each silicon semiconductor wafer 1.

Subsequently, a predetermined diffraction grating is formed on the side surface 1a of the semiconductor wafer 1 using the ID forming apparatus 8 shown in FIG.

It should be noted that the ID forming device 8 is provided with a side surface 1 of the semiconductor wafer 1 by, for example, a YAG laser.
The diffraction grating is formed by irradiating the laser beam 8a to the laser beam a. The diffraction grating may be formed by machining using, for example, a diamond needle. Further, an ion beam may be used instead of the laser beam 8b.

Here, the configuration of the ID forming apparatus 8 will be described. The rotary stage 8 a supporting the semiconductor wafer 1 is described.
A rotary stage drive motor 8c for driving the rotary stage 8a to rotate, a rotary stage lifting motor 8d for raising and lowering the rotary stage drive motor 8c, and a laser beam 8b
Beam optical system 8 having a laser beam source emitting light
e and a controller 8f for controlling the laser beam optical system 8e, the rotary stage drive motor 8c and the rotary stage elevating motor 8d.

First, the semiconductor wafer 1 is placed on the rotating stage 8a.
Place on.

Further, the control section 8f controls ON / OFF of the laser beam optical system 8e and drive control of the rotary stage drive motor 8c and the rotary stage up / down motor 8d.

Thereafter, the laser beam 8b is emitted from the laser beam optical system 8e by the control unit 8f, and is incident on a predetermined portion of the side surface 1a of the semiconductor wafer 1.

At this time, the control unit 8f rotates or moves the rotary stage 8a up and down, and controls the writing position (formation position) of the diffraction grating and the pitch of the diffraction grating to place the diffraction grating on the side surface 1a of the semiconductor wafer 1. Write (form).

In this embodiment, the diffraction grating serving as a wafer ID to be written on the semiconductor wafer 1 replaces the wafer ID with alphanumeric information “1” and “0” in this embodiment.
For example, "1" is written (formed) on the side surface 1a of the semiconductor wafer 1 as having a diffraction grating and "0" as not having a diffraction grating.

Next, the principle of reading a wafer ID formed on the side surface 1a of the semiconductor wafer 1 according to the present embodiment will be described with reference to FIGS.

First, the wafer ID is illuminated by a highly directional light source such as a semiconductor laser 3a.

Here, assuming that the incident angle from the semiconductor laser 3a to the wafer ID represented by the diffraction grating is θin,
The diffraction angle θout of the first-order diffracted light 3e is obtained by the following equation: θout = sin ⁻¹ (λ / p + sinθin) (1) Where p is the diffraction grating pitch, λ
Indicates the wavelength of the semiconductor laser 3a.

The number ID detector 3b, which is a diffracted light detecting means for detecting the diffracted light 3e, is arranged on an extension of the diffraction angle θout and in the direction of the arrangement of the diffraction gratings representing the wafer ID (the direction of the semiconductor wafer 1). In the circumferential direction). Here, the number ID detector 3b and the section ID detector 3c
Includes, for example, a one-dimensional CCD composed of a plurality of pixels.
(Charge Coupled Device) may be used.

Further, as for the semiconductor laser 3a, a plurality of semiconductor lasers 3a may be arranged in the direction of the arrangement of the diffraction gratings (the circumferential direction of the semiconductor wafer 1) as the wafer ID. Emitted laser light 3d
By using a spherical lens 3f and a cylindrical lens 3g as shown in FIG. 3, a slit may be formed in the circumferential direction of the semiconductor wafer 1 to be incident on a wafer ID composed of a plurality of diffraction gratings.

As a result, the number ID detector 3b corresponding to the diffraction grating forming portion 1d (see FIG. 2C) where the diffraction grating is formed on the side surface 1a of the semiconductor wafer 1 and the section I
The D detector 3c detects the diffracted light 3e, and corresponds to the number ID detector 3b and the section ID detector 3 corresponding to the diffraction grating non-formed portion 1e where the diffraction grating is not formed (see FIG. 2C).
“c” does not detect the diffracted light 3e.

Further, the recognizing unit 4 includes a number ID detector 3b.
Alternatively, a predetermined threshold value is provided for the light intensity detected by the section ID detector 3c, and when a light intensity exceeding this threshold value is detected, it is recognized that there is a diffraction grating, that is, information of "1". Otherwise, it is read as "0" information. As described above, the recognition unit 4 recognizes the wafer ID based on the arrangement of the “1” or “0” information detected by the plurality of number ID detectors 3b or section ID detectors 3c.

In the plurality of wafer ID groups 12,
The start position of the wafer number ID10 can be recognized by detecting the section ID11.

For example, the number of the diffraction gratings in the section ID 11 is set to the wafer number I so that the pitch of the diffraction grating in the section ID 11 is smaller than the pitch of the diffraction grating in the wafer number ID 10.
If the number of diffraction gratings of D10 is 1.5 times, which is not an integral multiple,
Since the diffraction angle θout is also about 1.5 times according to the expression (1), the section ID detector 3c is arranged on an extension of the diffraction angle θout, and whether the light intensity exceeds the threshold value by the recognition unit 4 is determined. Is determined, it is possible to recognize whether or not it is the start position of the wafer number ID10.

The wafer ID group 12 is assigned to the semiconductor wafer 1
At the outer circumference of 360 degrees, for example, at intervals of 22.5 degrees,
(See FIG. 2B), at least one wafer ID group 12 can be formed without rotating the semiconductor wafer 1 while the semiconductor wafer 1 is housed in the wafer cassette 2. Loading / unloading port 2a of wafer cassette 2
Can appear.

Thus, the wafer ID can be recognized while the semiconductor wafer 1 is stored in the wafer cassette 2.

Next, a method of manufacturing the semiconductor integrated circuit device according to the present embodiment will be described with reference to FIGS.

In the method of manufacturing the semiconductor integrated circuit device, various processes (steps) as shown in FIG. 6, such as film formation 34, ion implantation 35, and exposure, are performed on the semiconductor wafer 1 shown in FIG. 36, etching 37 and wafer inspection 3
Semiconductor Integrated Circuit Device 13 Formed by Repeating Step 9
(See FIG. 7), which uses the wafer ID reader.

Here, in the present embodiment, wafer inspection 39 is included in the main steps of the semiconductor manufacturing process shown in FIG.
The case where the wafer ID reader is used will be described below.

First, using the ID forming apparatus 8 shown in FIG. 4, as shown in FIG. 2, a wafer number ID10 (wafer ID) comprising a diffraction grating is formed on the entire circumference of the side surface 1a of the semiconductor wafer 1.
And a section ID 11 (wafer ID).

In the present embodiment, the outer periphery of the semiconductor wafer 1 is divided at, for example, 22.5 degrees, and includes a plurality of wafer numbers ID10 and one section ID11.
The wafer ID group 12 is formed.

As a result, the side surface 1a of the semiconductor wafer 1
It is divided into a diffraction grating forming portion 1d and a diffraction grating non-forming portion 1e.

Here, the wafer number ID as shown in FIG.
A diffraction grating forming portion 1d on which a wafer ID such as 10 or a section ID 11 is formed represents, for example, information "1", and a diffraction grating non-forming portion 1e on which no wafer ID is formed.
Represents information of “0”.

Thereafter, through various processes, the wafer inspection 3
Perform Step 9.

Here, the plurality of semiconductor wafers 1 having the wafer number ID 10 and the section ID 11 formed on the side surface 1 a are supported by the wafer cassette 2 serving as a wafer supporting portion (accommodated in the wafer cassette 2).

That is, in the wafer ID reading apparatus shown in FIG. 1, the wafer cassette 2 containing the semiconductor wafer 1 on which the wafer ID group 12 composed of the diffraction grating is formed on the side surface 1a is placed on the cassette elevator 5.

Subsequently, the elevator drive motor 6 is driven by the control unit 7 and the side surface 1a of each semiconductor wafer 1 is
Of the cassette elevator 5 is moved up and down to a position where is irradiated by the laser beam 3d from the semiconductor laser 3a.

Thereafter, each semiconductor wafer 1 housed and supported by the wafer cassette 2 serving as a wafer support is read out without taking out (moving) the semiconductor wafer 1 from the wafer cassette 2.

That is, the ID of the wafer ID reading device
From the semiconductor laser 3a in the detection unit 3 to the semiconductor wafer 1
Is irradiated with a laser beam 3d to the side surface 1a of the wafer ID.
The wafer number ID 10 and the section ID 11 in the group 12 are read.

Since the wafer ID group 12 is formed every 22.5 degrees with respect to the outer periphery of the semiconductor wafer 1,
At least one wafer ID group 12 is illuminated by the laser beam 3d at the loading / unloading port 2a of the wafer cassette 2.

Therefore, no matter what direction the semiconductor wafer 1 is stored in the wafer cassette 2, the semiconductor wafer 1 is not rotated, that is, the semiconductor wafer 1 is kept mounted in the wafer cassette 2. Can irradiate the laser beam 3d to the wafer ID group 12.

Here, the laser beam 3d is applied to the wafer ID group 1
When the incident light enters the wafer number ID10 or the section ID11 constituting the second at an angle θin, the diffraction angle θout is obtained by the equation (1).
Diffracted by

That is, as shown in FIG. 3, a laser beam 3d emitted from a semiconductor laser 3a is converted into a parallel light beam 3h by a spherical lens 3f, and further, the laser beam 3d is narrowed down into a slit by a cylindrical lens 3g.
Simultaneously illuminates a plurality of wafer IDs such as a wafer number ID10 and a section ID11.

A plurality of semiconductor lasers 3a may be provided over the entire outer periphery of the semiconductor wafer 1.

Also, the pitch p of the diffraction grating of section ID11
The number of diffraction gratings of section ID11 is set to 1.5 times or 2.5 times that is not an integral multiple of the number of diffraction gratings of wafer number ID10 so that i becomes smaller than the pitch p of the diffraction grating of wafer number ID10.

The diffraction angle θouti at this time is obtained by the following equation: θouti = sin ⁻¹ (λ / pi + sinθin) Here, pi indicates the pitch of the diffraction grating of section ID11, and λ indicates the wavelength of the semiconductor laser 3a.

That is, in the direction of the diffraction angle θouti,
The D detector 3c is installed.

The pitch p of the diffraction grating of section ID11
Assuming that i is an integral multiple of the pitch p of the diffraction grating of the wafer number ID10, the angle of the second- or higher-order diffraction angle θout generated by the diffraction grating of the wafer number ID10 is equal to the division ID1.
1 is substantially equal to the diffraction angle θouti generated by the first diffraction grating.
It becomes difficult to distinguish the diffraction grating of No. 1 from the diffraction grating of wafer number ID10.

Therefore, the pitch pi of the diffraction grating of the section ID 11 is not an integral multiple of the pitch p of the diffraction grating of the wafer number ID 10, for example, 1.5 times or 2.5 times.

Thereafter, the section ID detector 3c and the number I
The light intensity detected by the D detector 3b is sent to the recognition unit 4.

Further, the recognizing unit 4 compares the detected value with a preset threshold value, and if the detected value exceeds the threshold value, the presence of a diffraction grating, that is, information of "1". It recognizes and reads the number of the semiconductor wafer 1 when the wafer number is ID10, and reads the start of the wafer number ID10 when it is the section ID11.

As a result, in the recognition unit 4, the section ID
It recognizes whether the semiconductor wafer 1 detected by the detector 3c and the number ID detector 3b is a semiconductor wafer 1 to be subjected to a predetermined inspection.

Further, the predetermined inspection is performed on the semiconductor wafer 1 recognized as the inspection target.

The information on the recognized wafer ID of each semiconductor wafer 1 is sent to the semiconductor inspection apparatus 14 shown in FIG.

Thus, the semiconductor inspection apparatus 14 performs an appearance inspection of the semiconductor wafer 1 and an inspection for the presence / absence of foreign matter in each step of semiconductor manufacturing.

Further, as a result of the inspection by the semiconductor inspection apparatus 14, for example, the number of defects 16 and the defects 16 shown in FIG.
Is transferred to the analyzer 15 shown in FIG. 1 together with the wafer ID information of the semiconductor wafer 1.

In the analysis device 15, the wafer I
D indicates a predetermined process A in the same semiconductor wafer 1
And the defect coordinate data 15b of the predetermined process B (here, the process B is a process after the process A), and the defect whose defect coordinates match within a predetermined allowable range between the processes is searched. 16 and furthermore, those defects 16
Is deleted, the defect 1 newly generated in the process B is removed.
No. 6 defect coordinate data 15c is obtained.

By this processing, the analysis device 15 provides the map showing the defect coordinate data 15c of the defect 16 newly generated in the process B, the number of the defect 16 newly generated in each process, and the number of the defect 16 in the previous process. A bar graph 15d (see FIG. 7 (b)) showing the breakdown of the above is displayed.

As a result, workers involved in semiconductor manufacturing
By looking at these displays, a process having many defects 16 is quickly specified, and feedback is provided for each process.

According to the wafer ID reader of this embodiment and the method of manufacturing a semiconductor integrated circuit device using the same, the following operation and effect can be obtained.

That is, the wafer number ID10 and the section ID11, which are the wafer ID, are provided on the side surface 1a of the semiconductor wafer 1.
By reading the wafer ID of the semiconductor wafer 1 accommodated and supported by the wafer cassette 2 without reading (moving) the semiconductor wafer 1 from the wafer cassette 2 as it is, Can be.

That is, when finding the semiconductor wafer 1 to be processed, the semiconductor wafer 1 is once taken out from the wafer cassette 2 and the wafer ID is read, and then the semiconductor wafer 1 is returned to the wafer cassette 2 and the semiconductor wafer 1 to be processed is obtained. There is no need to repeat this operation until a 1 is found.

As a result, the speed of reading and recognizing the wafer ID of the semiconductor wafer 1 housed and supported in the wafer cassette 2 can be increased.
When the inspection is performed at a high speed, the throughput of the inspection can be improved.

A plurality of wafer ID groups 12 each consisting of a plurality of wafer numbers ID10 and one section ID 11 are dispersed on the side surface 1a of the semiconductor wafer 1 (for example, every 22.5 degrees).
By forming the wafer ID, the wafer ID can be read from any position on the outer peripheral portion of the semiconductor wafer 1.

Therefore, not only is the semiconductor wafer 1 not taken out of the wafer cassette 2 but also the wafer cassette 2
There is no need to change (e.g., rotate) the direction of the wafer ID, so that the reading and recognition of the wafer ID of the semiconductor wafer 1 can be sped up.

Further, since the wafer ID is formed on the side surface 1a of the semiconductor wafer 1, even if the semiconductor wafer 1 undergoes processing such as film formation 34 or etching 37, the side surface 1a Can be detected.

As a result, the contrast of the wafer ID does not change even if the processing on the semiconductor wafer 1 proceeds, so that erroneous recognition of the wafer ID can be prevented.

As a result, the recognition of the wafer ID can be performed with high accuracy.

Since the wafer ID reading device has the ID detecting section 3 for detecting the wafer ID on the side surface 1a of the semiconductor wafer 1 housed and supported in the wafer cassette 2, the semiconductor wafer 1 can be read by the imaging camera.
A mechanism for moving D to a position where it can be confirmed and a drive control unit for driving the mechanism are not required, and the structure of the wafer ID reading device can be simplified.

As a result, the size of the wafer ID reader can be reduced.

As a result, it is possible to prevent an increase in apparatus cost and apparatus floor area of the wafer ID reading apparatus.

Furthermore, a plurality of types of wafer IDs can be formed relatively easily by expressing the wafer ID by a diffraction grating and changing the pitch of the diffraction grating for each type of wafer ID. .

By irradiating the side surface 1a of the semiconductor wafer 1 with the laser beam 8b to form a diffraction grating,
Even on the side surface 1a of the semiconductor wafer 1, the wafer I
D can be formed.

Although the invention made by the inventor has been specifically described based on the embodiments of the present invention, the present invention is not limited to the embodiments of the present invention, and does not depart from the gist of the invention. It is needless to say that various changes can be made.

For example, in the above-described embodiment, a case has been described in which there are two types of wafer IDs formed on the side surface 1a of the semiconductor wafer 1. However, the number of types of wafer IDs may be other than two. .

Here, the wafer ID reading apparatus of another embodiment shown in FIGS. 8 and 9 has three types of wafer IDs.
This is for reading the wafer ID when the is formed.

The semiconductor wafer 1 shown in FIG. 9 has, as its wafer ID, a wafer number ID 10 representing the number of the semiconductor wafer 1 and a plurality of wafer ID groups 12 each composed of a plurality of the wafer IDs. There are provided three types of wafer IDs, a section ID 11 that divides every 12 and a crystal direction ID 17 that indicates the crystal direction of the semiconductor wafer 1, and the crystal direction ID 17 replaces the orientation flat 1b (see FIG. 5). .

In other words, also in the semiconductor wafer 1 (see FIGS. 2A to 2C) described in the above embodiment, the orientation direction ID 17 representing the crystal direction is formed so that the orientation flat 1b can be formed. No need to form.

The crystal direction ID 17 is the orientation flat 1b.
Semiconductor wafer 1 as a substitute for
Only one is formed for the side surface 1a.

Here, a method of recognizing the crystal direction ID 17 will be described with reference to FIGS.

When recognizing the crystal direction ID 17, the recognition is performed using a wafer ID reader shown in FIG.

First, a wafer number ID is provided at a position corresponding to the crystal direction of the side surface 1a of the semiconductor wafer 1 made of silicon.
A pitch different from that of the diffraction grating of section 10 and section ID 11;
For example, a diffraction grating having a crystal direction ID17 is formed at a pitch of 2.5 times.

Further, on the rotary table 18 serving as a wafer support, the wafer number ID10 and the section ID1 are provided on the side surface 1a.
The semiconductor wafer 1 on which the crystal direction 1 and the crystal direction ID17 are formed is placed.

Next, (1) described in the above embodiment
Diffraction angle θou corresponding to this pitch obtained by the formula
The crystal direction ID detector 3i is arranged in the direction of t.

Thereafter, the rotary table 18 is rotated by the control unit 7 and the semiconductor laser 3a emits laser light 3d. The laser beam 3d is converted into a parallel light beam 3h by a collimator lens 3j, and is further narrowed down into a spot by a condenser lens 3k to irradiate a diffraction grating of a crystal direction ID17 which is a wafer ID.

The rotary table 18 is rotated by the drive of a rotary table drive motor 19. Here, when the diffraction grating of the crystal direction ID17 passes through the laser light 3d, a diffraction light 3e is generated, and the crystal direction ID detector 3i detects the diffraction light 3e.

Further, the recognizing unit 4 measures, for example, the angle of the crystal direction from the origin of the turntable 18 and, based on this angle, places the semiconductor wafer 1 on a stage (support) of a semiconductor manufacturing apparatus such as the exposure apparatus 21. Determine the angle when placing.

Here, the control section 7 controls the transfer arm 20 so as to be at the angle, and transfers the semiconductor wafer 1 to the stage of the exposure apparatus 21.

In detecting the crystal direction ID 17, it is not always necessary to use a wafer ID reader provided with a rotary table 18, and a number of crystal direction ID detectors 3 i and a number of semiconductor lasers 3 are provided around the rotary table 18.
By setting a, it is also possible to recognize the crystal direction ID 17 without rotating the turntable 18 and without moving the semiconductor wafer 1 from the turntable 18 as the wafer support.

Further, using the wafer ID reading device (see FIG. 1) described in the above embodiment,
It is also possible to read 7.

Here, the wafer ID reading device shown in FIG. 8 may be incorporated in a semiconductor manufacturing device (for example, exposure device 21 or the like) which needs to detect the crystal direction.

Note that, as shown in FIG.
A crystal direction ID17 representing a crystal direction as a wafer ID
The need for providing the orientation flat 1b (see FIG. 5) is eliminated, so that the thickness of the insulating film and the wiring film can be formed uniformly over the entire surface of the semiconductor wafer 1.

As a result, the semiconductor integrated circuit device 13 (FIG. 7)
) Can be reduced, and the yield of the semiconductor chips can be improved.

Further, in the above-described embodiment, the case of the wafer inspection 39 has been described as the predetermined processing to be performed on the semiconductor wafer 1, but the processing is not limited to the inspection. It may be processing.

The method of manufacturing the semiconductor integrated circuit device 13 in this case includes a step of forming a wafer ID on the side surface 1a of the semiconductor wafer 1, a step of reading the wafer ID of the semiconductor wafer 1 having the wafer ID formed on the side surface 1a, The wafer I
The method includes a step of recognizing the semiconductor wafer 1 that performs a predetermined process by reading D.

The wafer I described in the above embodiment is
The D-reading device is mounted on the wafer cassette 2 (see FIG. 1).
A plurality of diffracted light detecting means and a plurality of light sources may be provided.

According to this, the cassette elevator 5, the elevator drive motor 6, the control section 7, and the like shown in FIG. 1 can be eliminated, and the structure of the wafer ID reading device can be simplified.

In the above-described embodiment and the other embodiments, the case where the wafer ID is represented by a diffraction grating has been described. However, the wafer ID is not limited to the diffraction grating, and may be represented by a bar code or the like. It may be.

[0152]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

(1). Wafer ID on side of semiconductor wafer
Is formed, when reading the wafer ID of the semiconductor wafer supported by the wafer support unit, the wafer ID can be read as it is without moving the semiconductor wafer from the wafer support unit. Thereby, the reading and recognition of the wafer ID of the semiconductor wafer supported by the wafer support portion can be speeded up. As a result, when processing such as inspection is performed on the semiconductor wafer, the processing throughput can be improved. .

(2). By forming a plurality of wafer ID groups dispersedly on the side of the semiconductor wafer, the wafer ID
Can be read from any position on the outer peripheral portion of the semiconductor wafer. Therefore, not only does not take out the semiconductor wafer from the wafer support portion, but also it is not necessary to rotate the wafer support portion, so that the reading and recognition of the wafer ID of the semiconductor wafer can be speeded up.

(3). Since the wafer ID is formed on the side surface of the semiconductor wafer, the wafer ID formed on the side surface of the semiconductor wafer can be detected irrespective of a change in the base even if the semiconductor wafer undergoes processing such as film formation or etching. . As a result, the contrast of the wafer ID does not change even when the processing on the semiconductor wafer proceeds, so that erroneous recognition of the wafer ID can be prevented. As a result, the wafer ID
Can be recognized with high accuracy.

(4). A mechanism for moving a semiconductor wafer to a position where a wafer ID can be confirmed by an imaging camera by the wafer ID reading device having an ID detection unit for detecting a wafer ID on a side surface of the semiconductor wafer supported by the wafer support unit. And a drive control unit is not required, and the structure of the wafer ID reading device can be simplified. This makes it possible to downsize the wafer ID reading device. As a result, it is possible to prevent an increase in apparatus cost and apparatus floor area required for the wafer ID reading apparatus.

(5). By providing a crystal direction ID representing the crystal direction of the semiconductor wafer as the wafer ID, it is not necessary to provide an orientation flat, so that the thickness of the insulating film and the wiring film can be formed uniformly over the entire surface of the semiconductor wafer. it can. As a result, the probability of failure when a semiconductor chip is formed can be reduced, and the yield of semiconductor chips can be improved.

[Brief description of the drawings]

FIG. 1 is a configuration conceptual diagram showing an example of an embodiment of a structure of a wafer ID reading device according to the present invention.

FIGS. 2A, 2B, and 2C are diagrams showing an example of an embodiment of a structure of a semiconductor wafer on which a wafer ID to be read by a wafer ID reading device of the present invention is formed;
(A) is a perspective view, (b) is a plan view, and (c) is an enlarged partial side view.

FIG. 3 is an enlarged partial perspective view showing an example of an embodiment of the structure of the wafer ID reading device according to the present invention.

FIG. 4 is a configuration conceptual diagram showing an example of an embodiment of a structure of an ID forming apparatus for forming a wafer ID on the semiconductor wafer shown in FIG. 2;

FIGS. 5A, 5B, and 5C are perspective views showing an example of an embodiment of a method for forming an orientation flat in the semiconductor wafer shown in FIG. 2;

FIG. 6 is a flowchart showing an example of an embodiment of a semiconductor manufacturing process in which the wafer ID reader according to the present invention is used.

FIGS. 7A and 7B are diagrams showing an example of an embodiment of defect data in a method of manufacturing a semiconductor integrated circuit device according to the present invention, wherein FIG. 7A is a defect data coordinate map, and FIG. Is a defect data bar graph.

FIG. 8 is a conceptual diagram showing the structure of a wafer ID reading device according to another embodiment of the present invention.

FIG. 9 is an enlarged partial perspective view showing the structure of a wafer ID reading device according to another embodiment of the present invention.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 semiconductor wafer 1a side surface 1b orientation flat 1c ingot 1d diffraction grating forming portion 1e diffraction grating non-forming portion 2 wafer cassette (wafer supporting portion) 2a carry-in / out port 3 ID detecting portion 3a semiconductor laser (light source) 3b number ID detector (diffraction light detection Means) 3c Section ID detector (diffraction light detection means) 3d Laser light (illumination light) 3e Diffracted light 3f Spherical lens 3g Cylindrical lens 3h Parallel light flux 3i Crystal direction ID detector (diffraction light detection means) 3j Collimator lens 3k Focusing Lens 4 Recognition unit 5 Cassette elevator 6 Elevator drive motor 7 Control unit 8 ID forming device 8a Rotary stage 8b Laser beam 8c Rotary stage drive motor 8d Rotary stage elevating motor 8e Laser beam optical system 8f Control unit 9 X-ray 10 Wafer number ID ( Wafer ID 10a Wafer number ID (wafer ID) 11 Section ID (wafer ID) 12 Wafer ID group 13 Semiconductor integrated circuit device 14 Semiconductor inspection device 15 Analyzer 15a Defect coordinate data 15b Defect coordinate data 15c Defect coordinate data 15d Bar graph 16 Defect 17 Crystal direction ID (wafer ID) 18 Rotary table (wafer support) 19 Rotary table drive motor 20 Transfer arm 21 Exposure device (Semiconductor manufacturing device) 30 Single crystal growth 31 Crystal cutting 32 Polishing 33 Wafer formation 34 Film formation 35 Ion implantation 36 Exposure 37 Etching 39 Wafer inspection

Claims (9)

[Claims] 1. A wafer support for supporting a semiconductor wafer having a wafer ID formed on a side surface of the semiconductor wafer, and a wafer ID supported by the wafer support without moving the semiconductor wafer supported by the wafer support. And a recognition unit for recognizing a semiconductor wafer on which predetermined processing such as inspection is performed based on a detection result of the ID detection unit. 2. The wafer ID reading device according to claim 1, wherein the wafer ID is represented by a diffraction grating,
The ID detection unit has a light source that irradiates the wafer ID with illumination light, and a diffracted light detection unit that detects diffracted light that is reflected light formed by irradiating the wafer ID with the illumination light. A wafer ID reading device characterized by the above-mentioned. 3. A method of manufacturing a semiconductor integrated circuit device using the wafer ID reader according to claim 1, wherein a wafer ID is formed on a side surface of the semiconductor wafer, and a semiconductor having the wafer ID formed on the side surface. A method for manufacturing a semiconductor integrated circuit device, comprising: a step of reading the wafer ID of a wafer; and a step of recognizing a semiconductor wafer on which predetermined processing is performed by reading the wafer ID. 4. A method of manufacturing a semiconductor integrated circuit device using the wafer ID reading device according to claim 1, wherein a semiconductor device has a wafer ID formed on a side surface of the semiconductor wafer. A step of supporting a wafer by a wafer support; a step of reading a wafer ID of the semiconductor wafer supported by the wafer support without moving the wafer from the wafer support; and performing a predetermined inspection by reading the wafer ID. A method for manufacturing a semiconductor integrated circuit device, comprising: a step of recognizing a semiconductor wafer; and a step of performing the predetermined inspection on a semiconductor wafer recognized as an inspection target. 5. The method for manufacturing a semiconductor integrated circuit device according to claim 3, wherein a plurality of wafer ID groups including a plurality of said wafer IDs are dispersed and formed on a side surface of said semiconductor wafer. Of manufacturing a semiconductor integrated circuit device. 6. The method for manufacturing a semiconductor integrated circuit device according to claim 3, wherein the wafer ID is:
Two types of wafer IDs: a wafer number ID indicating the number of the semiconductor wafer, and a section ID for dividing a plurality of wafer ID groups each including a plurality of the wafer IDs for each wafer ID group.
And a method of manufacturing a semiconductor integrated circuit device. 7. The method for manufacturing a semiconductor integrated circuit device according to claim 3, wherein the wafer ID is a wafer number ID representing a number of the semiconductor wafer.
Three types of wafers I, a section ID for dividing a plurality of wafer ID groups each composed of a plurality of the wafer IDs for each wafer ID group, and a crystal direction ID representing a crystal direction of the semiconductor wafer.
D. A method for manufacturing a semiconductor integrated circuit device, comprising: 8. The method for manufacturing a semiconductor integrated circuit device according to claim 3, wherein said wafer ID is
Is represented by a diffraction grating, and a wafer ID is formed by changing a pitch of the diffraction grating for each type of wafer ID. 9. The method for manufacturing a semiconductor integrated circuit device according to claim 3, wherein the wafer ID is represented by a diffraction grating, and a side surface of the semiconductor wafer is irradiated with a laser beam. Forming the diffraction grating as described above.