JPH1064907A - 電気的固体装置及びその製造方法 - Google Patents

電気的固体装置及びその製造方法

Info

Publication number
JPH1064907A
JPH1064907A JP8229444A JP22944496A JPH1064907A JP H1064907 A JPH1064907 A JP H1064907A JP 8229444 A JP8229444 A JP 8229444A JP 22944496 A JP22944496 A JP 22944496A JP H1064907 A JPH1064907 A JP H1064907A
Authority
JP
Japan
Prior art keywords
thin film
film
conductive thin
alcu
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8229444A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1064907A5 (2
Inventor
Hiroshi Toyoda
啓 豊田
Junichi Wada
純一 和田
Masahiko Hasunuma
正彦 蓮沼
Hisafumi Kaneko
尚史 金子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP8229444A priority Critical patent/JPH1064907A/ja
Priority to US08/909,733 priority patent/US6054770A/en
Priority to KR1019970038258A priority patent/KR100320774B1/ko
Publication of JPH1064907A publication Critical patent/JPH1064907A/ja
Publication of JPH1064907A5 publication Critical patent/JPH1064907A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP8229444A 1996-08-13 1996-08-13 電気的固体装置及びその製造方法 Pending JPH1064907A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8229444A JPH1064907A (ja) 1996-08-13 1996-08-13 電気的固体装置及びその製造方法
US08/909,733 US6054770A (en) 1996-08-13 1997-08-12 Electric solid state device and method for manufacturing the device
KR1019970038258A KR100320774B1 (ko) 1996-08-13 1997-08-12 전기적고체장치및그장치의제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8229444A JPH1064907A (ja) 1996-08-13 1996-08-13 電気的固体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPH1064907A true JPH1064907A (ja) 1998-03-06
JPH1064907A5 JPH1064907A5 (2) 2004-08-26

Family

ID=16892314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8229444A Pending JPH1064907A (ja) 1996-08-13 1996-08-13 電気的固体装置及びその製造方法

Country Status (3)

Country Link
US (1) US6054770A (2)
JP (1) JPH1064907A (2)
KR (1) KR100320774B1 (2)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007214480A (ja) * 2006-02-13 2007-08-23 Showa Denko Kk ＧａＮ系半導体発光素子およびその製造方法
JP2007234865A (ja) * 2006-03-01 2007-09-13 Showa Denko Kk ＧａＮ系半導体発光素子およびその製造方法
KR100883041B1 (ko) * 2002-11-08 2009-02-09 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조 방법
WO2009128575A1 (en) * 2008-04-17 2009-10-22 University Of Ulsan Foundation For Industry Cooperation Low temperature polycrystalline growth
JP2013514662A (ja) * 2009-12-16 2013-04-25 ナショナル セミコンダクター コーポレーション ガリウム窒化物又は他の窒化物ベースのパワーデバイスのためのゲルマニウムを含む低オーミックコンタクト
US10170494B2 (en) 2015-08-25 2019-01-01 Toshiba Memory Corporation Semiconductor device and method for manufacturing the same
JP2019181723A (ja) * 2018-04-04 2019-10-24 キヤノン株式会社 液体吐出ヘッド用基板及びその製造方法、並びに液体吐出ヘッド

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11340228A (ja) * 1998-05-28 1999-12-10 Fujitsu Ltd Ａｌ合金配線を有する半導体装置
US10047430B2 (en) 1999-10-08 2018-08-14 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US8696875B2 (en) * 1999-10-08 2014-04-15 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
JP3408527B2 (ja) * 2000-10-26 2003-05-19 松下電器産業株式会社 半導体装置の製造方法
US7504006B2 (en) * 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
US6800938B2 (en) * 2002-08-08 2004-10-05 International Business Machines Corporation Semiconductor device having amorphous barrier layer for copper metallurgy
US6762501B1 (en) * 2003-04-14 2004-07-13 Texas Instruments Incorporated Low stress integrated circuit copper interconnect structures
US7323805B2 (en) * 2004-01-28 2008-01-29 Kabushiki Kaisha Toshiba Piezoelectric thin film device and method for manufacturing the same
US7227266B2 (en) 2004-11-09 2007-06-05 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure to reduce stress induced voiding effect
JP2008227274A (ja) * 2007-03-14 2008-09-25 Nec Electronics Corp 半導体装置の製造方法
CN108962921B (zh) * 2017-05-18 2021-03-16 中芯国际集成电路制造(上海)有限公司 半导体装置及其制造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3743894A (en) * 1972-06-01 1973-07-03 Motorola Inc Electromigration resistant semiconductor contacts and the method of producing same
JPH0779136B2 (ja) * 1986-06-06 1995-08-23 株式会社日立製作所 半導体装置
JPS63316456A (ja) * 1987-06-19 1988-12-23 Hitachi Ltd 半導体装置およびその製造方法
JP2680468B2 (ja) * 1989-07-01 1997-11-19 株式会社東芝 半導体装置および半導体装置の製造方法
US4970176A (en) * 1989-09-29 1990-11-13 Motorola, Inc. Multiple step metallization process
JP2937613B2 (ja) * 1991-07-16 1999-08-23 日本電気株式会社 薄膜配線およびその製造方法
JP3033331B2 (ja) * 1992-02-10 2000-04-17 日本電気株式会社 薄膜配線の製造方法
JP3332456B2 (ja) * 1992-03-24 2002-10-07 株式会社東芝 半導体装置の製造方法及び半導体装置
JPH06268083A (ja) * 1993-03-11 1994-09-22 Sony Corp 半導体装置の配線
US5705429A (en) * 1993-10-04 1998-01-06 Yamaha Corporation Method of manufacturing aluminum wiring at a substrate temperature from 100 to 150 degrees celsius
JP3277098B2 (ja) * 1994-07-26 2002-04-22 株式会社東芝 半導体装置の製造方法
JPH0878659A (ja) * 1994-09-02 1996-03-22 Sanyo Electric Co Ltd 半導体デバイス及びその製造方法
US5580823A (en) * 1994-12-15 1996-12-03 Motorola, Inc. Process for fabricating a collimated metal layer and contact structure in a semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100883041B1 (ko) * 2002-11-08 2009-02-09 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조 방법
JP2007214480A (ja) * 2006-02-13 2007-08-23 Showa Denko Kk ＧａＮ系半導体発光素子およびその製造方法
JP2007234865A (ja) * 2006-03-01 2007-09-13 Showa Denko Kk ＧａＮ系半導体発光素子およびその製造方法
WO2009128575A1 (en) * 2008-04-17 2009-10-22 University Of Ulsan Foundation For Industry Cooperation Low temperature polycrystalline growth
JP2013514662A (ja) * 2009-12-16 2013-04-25 ナショナル セミコンダクター コーポレーション ガリウム窒化物又は他の窒化物ベースのパワーデバイスのためのゲルマニウムを含む低オーミックコンタクト
US10170494B2 (en) 2015-08-25 2019-01-01 Toshiba Memory Corporation Semiconductor device and method for manufacturing the same
JP2019181723A (ja) * 2018-04-04 2019-10-24 キヤノン株式会社 液体吐出ヘッド用基板及びその製造方法、並びに液体吐出ヘッド

Also Published As

Publication number Publication date
KR19980018584A (ko) 1998-06-05
KR100320774B1 (ko) 2002-06-20
US6054770A (en) 2000-04-25

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