JPH1072253A - Method for producing high-density ITO sintered body, high-density ITO sintered body, and ITO sputter target using the same - Google Patents

Method for producing high-density ITO sintered body, high-density ITO sintered body, and ITO sputter target using the same

Info

Publication number
JPH1072253A
JPH1072253A JP9140002A JP14000297A JPH1072253A JP H1072253 A JPH1072253 A JP H1072253A JP 9140002 A JP9140002 A JP 9140002A JP 14000297 A JP14000297 A JP 14000297A JP H1072253 A JPH1072253 A JP H1072253A
Authority
JP
Japan
Prior art keywords
powder
indium
tin oxide
tin
density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP9140002A
Other languages
Japanese (ja)
Inventor
Akira Hasegawa
彰 長谷川
Shinji Fujiwara
進治 藤原
Kunio Saegusa
邦夫 三枝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Priority to JP9140002A priority Critical patent/JPH1072253A/en
Publication of JPH1072253A publication Critical patent/JPH1072253A/en
Withdrawn legal-status Critical Current

Links

Landscapes

  • Compositions Of Oxide Ceramics (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

(57)【要約】 【課題】インジウムと錫と酸素からなる粉末を成形して
焼結させるITOスパッタタ−ゲットの製造方法におい
て、スパッタタ−ゲットとしての特性に優れ、工業的に
有用な焼結密度の高い緻密なITO焼結体、及びそれを
原料として得られるITOスパッタターゲットを提供す
る。 【解決手段】インジウムと錫と酸素からなる粉末を成形
して焼結させる酸化インジウム−酸化錫焼結体の製造方
法において、酸化インジウム−酸化錫粉末の密度とBE
T比表面積から求めたBET比表面積径が0.05μm
を超え1μm以下の粉末を成形、又は酸化インジウム及
び/又は酸化錫の粉末のそれぞれのBET比表面積径が
0.05μmを超え1μm以下の粉末を混合して成形し
て、1450゜C以上1650゜C以下の範囲で焼結する酸
化インジウム−酸化錫焼結体の製造方法、及び該製造方
法により製造される酸化インジウム−酸化錫焼結体、並
びにそれを原料として得られるITOスパッタターゲッ
ト。
(57) Abstract: A method for producing an ITO sputter target, which comprises molding and sintering a powder comprising indium, tin and oxygen, has excellent sputter target characteristics and is industrially useful in sintering density. And a dense ITO sintered body, and an ITO sputter target obtained using the same as a raw material. A method for producing an indium oxide-tin oxide sintered body for molding and sintering a powder composed of indium, tin, and oxygen, wherein the density of the indium oxide-tin oxide powder and the BE
BET specific surface area diameter determined from T specific surface area is 0.05 μm
And a powder having a BET specific surface area of more than 0.05 μm and 1 μm or less of indium oxide and / or tin oxide powder is mixed to form a powder of 1450 ° C. or more and 1650 ° C. A method for producing an indium oxide-tin oxide sintered body sintered in the range of C or less, an indium oxide-tin oxide sintered body produced by the production method, and an ITO sputter target obtained using the same as a raw material.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、高密度の酸化イン
ジウム−酸化錫焼結体の製造方法に関する。
The present invention relates to a method for producing a high-density indium oxide-tin oxide sintered body.

【0002】[0002]

【従来の技術】酸化インジウム−酸化錫(Indium
−Tin−Oxide、以下、ITOと略すことがあ
る)薄膜は、高い導電性と優れた透光性を有することか
ら、液晶ディスプレ−用の透明導電性膜として利用され
ている。
2. Description of the Related Art Indium oxide-tin oxide (Indium oxide)
A thin film is used as a transparent conductive film for a liquid crystal display because it has high conductivity and excellent translucency.

【0003】ITO薄膜を形成させる方法としては、I
TO粉末を基材に塗布する方法や、酸化物原料粉末を成
形、焼結して得たITO焼結体タ−ゲットのスパッタリ
ング法によって、基材面にITO膜を形成させる方法な
どが挙げらる。ITO粉末を基材に塗布する方法は、ス
パッタリング法に較べて、膜質や性能がやや劣る。
[0003] As a method of forming an ITO thin film, I
Examples include a method of applying a TO powder to a base material, and a method of forming an ITO film on a base material surface by a sputtering method of an ITO sintered body target obtained by molding and sintering an oxide raw material powder. You. The method of applying the ITO powder to the base material is somewhat inferior in film quality and performance as compared with the sputtering method.

【0004】また、ITO焼結体ターゲットを用いたス
パッタリング法によるITO薄膜の製造方法では、ノジ
ュールとよばれるITOタ−ゲット表面の黒化現象が起
こるので、スパッタを止めてITOタ−ゲットを取り出
し、ノジュールを削り取るクリーニングと呼ばれる作業
が必要なため、生産性が落ちるという問題があった。I
TO焼結体ターゲットを用いたスパッタリング法におけ
るノジュールの発生は、密度の低いITOターゲットで
起こり易く、高密度のITOターゲットを用いるとノジ
ュールの発生が抑えられ、クリーニングの工程が省け、
生産性が向上する。
In the method of manufacturing an ITO thin film by sputtering using an ITO sintered body target, a blackening phenomenon of the ITO target surface called nodule occurs. Therefore, the sputtering is stopped and the ITO target is taken out. However, there is a problem in that productivity is reduced because an operation called cleaning for scraping the nodules is required. I
The generation of nodules in a sputtering method using a TO sintered body target is likely to occur in a low-density ITO target, and the use of a high-density ITO target suppresses the generation of nodules, thereby eliminating the cleaning step,
Productivity is improved.

【0005】低密度のITOターゲットは、スパッタを
続けるうちに抵抗が高くなり、スパッタ効率が落ちると
いう問題があり、また、低密度のITOターゲットで
は、パーティクルと呼ばれるゴミが、スパッタ装置内で
発生し、ITO膜用の基板上に付着し、成膜したITO
膜の特性を悪くしたり、微細なITO膜のパターンを断
線させるというような問題もあった。さらに、低密度の
ITOターゲットは、それ自体の抵抗値が高く、このた
めスパッタの生産性が低く、スパッタ中に供給電力を高
めると異常放電が起き、スパッタを安定して行えない等
の問題もある。
[0005] The low-density ITO target has a problem that the resistance increases as sputtering continues and the sputter efficiency decreases. In addition, the low-density ITO target generates dust called particles in the sputtering apparatus. ITO deposited and deposited on a substrate for ITO film
There were also problems such as deteriorating the characteristics of the film and breaking the pattern of the fine ITO film. Furthermore, the low-density ITO target has a high resistance value itself, which results in low spatter productivity. If the supply power is increased during sputtering, abnormal discharge occurs and the sputtering cannot be performed stably. is there.

【0006】これ迄に焼結温度を高めて、焼結密度を上
げ、高密度のITOターゲットを得る方法が知られてい
るが、焼結温度を高めると焼結時の収縮が大きくなり、
焼結体の反りや割れが起こりやすくなり、製品の歩留ま
りが悪くなったりする。また、高温で焼結を行うと、焼
結体の組織が粗大化し、結晶粒径が大きくなりすぎ、I
TOスパッタターゲットの強度が落ち、割れ易くなった
り、スパッタが不安定になりITO膜の膜質も悪くなる
という問題がある。
It has been known to raise the sintering temperature to increase the sintering density and obtain a high-density ITO target. However, when the sintering temperature is increased, the shrinkage during sintering increases.
Warpage and cracking of the sintered body are likely to occur, and the yield of the product is deteriorated. Further, when sintering is performed at a high temperature, the structure of the sintered body becomes coarse and the crystal grain size becomes too large.
There is a problem that the strength of the TO sputter target is reduced, the cracks are easily broken, and the spatter becomes unstable and the quality of the ITO film is deteriorated.

【0007】高密度のITO焼結体を得る方法として
は、ホットプレス法や熱間静水圧プレス(hot is
ostatic press 以下、HIPと略す)法
を用い、加圧下で焼結を行い、高密度のITO焼結体を
得ることも行われているが、ホットプレス法やHIP法
では、温度を高くすることが出来ないために、酸化錫が
十分固溶出来ず、ITOターゲットの抵抗値を下げら
ず、不均一なITOターゲットしか得られていなかっ
た。また、ホットプレス法やHIP法を用いると、高価
な設備を必要とするため、製品の価格が高くなるという
問題がある。
As a method for obtaining a high-density ITO sintered body, a hot pressing method or a hot isostatic pressing (hot is
sintering is performed under pressure to obtain a high-density ITO sintered body. However, in the hot pressing method and the HIP method, the temperature is increased. Therefore, tin oxide could not be dissolved sufficiently, the resistance value of the ITO target did not decrease, and only a non-uniform ITO target was obtained. In addition, when the hot press method or the HIP method is used, expensive equipment is required, so that there is a problem that the price of the product increases.

【0008】また、ホットプレス法やHIP法を用いず
に、加圧した酸素ガス雰囲気中でITO焼結体を焼結す
る方法が考案されている(特開平3−207858号公
報)が、加圧した酸素ガス雰囲気中で焼結するために
は、圧力に耐えられる特殊な装置を必要とし高価な設備
を必要とするため、製品の価格が高くなるという問題が
ある。さらに高圧の酸素ガス雰囲気の安全性などの問題
がある。
A method of sintering an ITO sintered body in a pressurized oxygen gas atmosphere without using a hot press method or a HIP method has been devised (JP-A-3-207858). In order to perform sintering in a pressurized oxygen gas atmosphere, a special device that can withstand the pressure is required, and expensive equipment is required. Therefore, there is a problem that the price of the product increases. Further, there is a problem such as safety in a high-pressure oxygen gas atmosphere.

【0009】その他、粒径の大きい酸化錫粉末を微粒な
酸化インジウム粉末に混合する方法も提案されている
(特開平6−183732号公報)が、粒径が大きくな
ると拡散が十分に起こらず、不均一になる可能性があ
る。
In addition, a method has been proposed in which tin oxide powder having a large particle size is mixed with fine indium oxide powder (Japanese Patent Application Laid-Open No. 6-183732). However, when the particle size is large, diffusion does not sufficiently occur. May be uneven.

【0010】[0010]

【発明が解決しようとする課題】本発明の目的は、イン
ジウムと錫と酸素からなる粉末を成形し焼結させるIT
Oスパッタリングターゲットの製造方法において、スパ
ッタターゲットとしての特性が優れ、工業的に有用なも
のである焼結密度の高い緻密なITO焼結体を提供する
ことにある。
SUMMARY OF THE INVENTION It is an object of the present invention to provide a method for forming and sintering a powder comprising indium, tin and oxygen.
An object of the present invention is to provide a dense ITO sintered body having a high sintering density, which has excellent characteristics as a sputter target and is industrially useful in a method for manufacturing an O sputtering target.

【0011】[0011]

【課題を解決するための手段】本発明者等は、上記の課
題を解決すべく、鋭意検討した結果、酸化インジウム−
酸化錫粉末の密度とBET比表面積から求めた換算粒径
(BET径)が特定された粉末を成形し、特定の温度範
囲で焼結した場合に、高密度のITO焼結体が取得でき
ることを見出し、本発明を完成するに至った。すなわ
ち、本発明は、下記の(1)〜(7)を提供する。イン
ジウムと錫と酸素からなる粉末を成形して焼結させる酸
化インジウム−酸化錫焼結体の製造方法において、
Means for Solving the Problems The present inventors have conducted intensive studies in order to solve the above-mentioned problems, and as a result, have found that indium oxide-
When a powder having a converted particle diameter (BET diameter) determined from the density of the tin oxide powder and the BET specific surface area is formed and sintered in a specific temperature range, it is possible to obtain a high-density ITO sintered body. As a result, the present invention has been completed. That is, the present invention provides the following (1) to (7). In a method for producing a sintered body of indium oxide-tin oxide, in which a powder comprising indium, tin and oxygen is molded and sintered,

【0012】(1−i)酸化インジウム−酸化錫粉末の
密度とBET比表面積から求めた換算粒径(BET径)
が0.05μmを超え1μm以下の粉末を成形し、145
0゜C以上1650゜C以下の範囲で焼結することを特徴と
する酸化インジウム−酸化錫焼結体の製造方法
(1-i) Converted particle diameter (BET diameter) determined from the density of the indium oxide-tin oxide powder and the BET specific surface area
Is more than 0.05 μm and less than 1 μm
A method for producing an indium oxide-tin oxide sintered body, characterized by sintering in the range of 0 ° C or more and 1650 ° C or less.

【0013】(1−ii)インジウムと錫と酸素からなる
粉末を成形して焼結させる酸化インジウム−酸化錫焼結
体の製造方法において、酸化インジウム粉末の密度とB
ET比表面積から求めた換算粒径(BET径)が0.0
5μmを超え1μm以下の酸化インジウム粉末と、酸化錫
粉末の密度とBET比表面積から求めた換算粒径(BE
T径)が0.05μmを超え1μm以下の酸化錫粉末とを
混合して成形し、1450゜C以上1650゜C以下の範囲
で焼結することを特徴とする酸化インジウム−酸化錫焼
結体の製造方法
(1-ii) A method for producing a sintered body of indium oxide-tin oxide, in which a powder comprising indium, tin and oxygen is formed and sintered, the density of indium oxide powder and B
The converted particle diameter (BET diameter) determined from the ET specific surface area is 0.0
The converted particle diameter (BE) determined from the density of the indium oxide powder of more than 5 μm and 1 μm or less and the tin oxide powder and the BET specific surface area
Indium oxide-tin oxide sintered body characterized by mixing and molding tin oxide powder having a T diameter of more than 0.05 μm and not more than 1 μm and sintering in the range of 1450 ° C. to 1650 ° C. Manufacturing method

【0014】(1−iii)インジウムと錫と酸素からな
る粉末を成形して焼結させる酸化インジウム−酸化錫焼
結体の製造方法において、酸化インジウム−酸化錫粉末
の密度とBET比表面積から求めた換算粒径(BET
径)が0.05μmを超え1μm以下の酸化インジウム−
酸化錫粉末と酸化インジウム錫粉末の密度とBET比表
面積から求めた換算粒径(BET径)が0.05μmを
超え1μm以下の酸化錫粉末とを混合して成形し、14
50゜C以上1650゜C以下の範囲で焼結することを特徴
とする酸化インジウム−酸化錫焼結体の製造方法
(1-iii) In a method for producing an indium oxide-tin oxide sintered body in which a powder comprising indium, tin and oxygen is molded and sintered, the powder is obtained from the density of the indium oxide-tin oxide powder and the BET specific surface area. Converted particle size (BET
Indium oxide having a diameter of more than 0.05 μm and 1 μm or less
A tin oxide powder having a converted particle diameter (BET diameter) calculated from the density of the tin oxide powder and the indium tin oxide powder and the BET specific surface area (BET diameter) of more than 0.05 μm and 1 μm or less is mixed and molded.
A method for producing an indium oxide-tin oxide sintered body characterized in that sintering is performed at a temperature of 50 ° C. or more and 1650 ° C. or less.

【0015】(1−iv)酸化インジウム−酸化錫粉末の
密度とBET比表面積から求めた換算粒径(BET径)
が0.05μmを超え1μm以下の酸化インジウム−酸化
錫粉末と、酸化インジウム粉末の密度とBET比表面積
から求めた換算粒径(BET径)が0.05μmを超え
1μm以下の酸化インジウム粉末とを混合して成形し、
1450゜C以上1650゜C以下の範囲で焼結することを
特徴とする酸化インジウム−酸化錫焼結体の製造方法
(1-iv) Converted particle diameter (BET diameter) determined from the density of the indium oxide-tin oxide powder and the BET specific surface area
Indium oxide-tin oxide powder having a particle size exceeding 0.05 μm and 1 μm or less, and indium oxide powder having a converted particle size (BET diameter) determined from the density of the indium oxide powder and the BET specific surface area exceeding 0.05 μm and 1 μm or less. Mix and mold,
A method for producing an indium oxide-tin oxide sintered body, comprising sintering in the range of 1450 ° C or more and 1650 ° C or less.

【0016】(2)インジウム塩と錫塩の混合水溶液を
アルカリ性水溶液と反応させ、得られた沈澱を焼成し
て、酸化インジウム−酸化錫粉末の密度とBET比表面
積から求めた換算粒径(BET径)が0.05μmを超
え1μm以下の粉末を得、該粉末を成形し、1450゜C
以上1650゜C以下の範囲で焼結することを特徴とする
酸化インジウム−酸化錫焼結体の製造方法
(2) A mixed aqueous solution of an indium salt and a tin salt is reacted with an alkaline aqueous solution, and the obtained precipitate is calcined to obtain a reduced particle diameter (BET) determined from the density of the indium oxide-tin oxide powder and the BET specific surface area. Powder having a diameter of more than 0.05 μm and 1 μm or less is obtained.
A method for producing an indium oxide-tin oxide sintered body characterized by sintering at a temperature of 1650 ° C. or less.

【0017】(3)インジウム塩の水溶液と錫塩の水溶
液を、それぞれアルカリ性水溶液と反応させ、得られた
それぞれの沈澱を焼成して、酸化インジウム粉末の密度
とBET比表面積から求めた換算粒径(BET径)が
0.05μmを超え1μm以下の酸化インジウム粉末と、
酸化錫粉末の密度とBET比表面積から求めた換算粒径
(BET径)が0.05μmを超え1μm以下の酸化錫粉
末とを得、それぞれの粉末を混合して成形し、1450
゜C以上1650゜C以下の範囲で焼結することを特徴とす
る酸化インジウム−酸化錫焼結体の製造方法
(3) An aqueous solution of an indium salt and an aqueous solution of a tin salt are each reacted with an alkaline aqueous solution, and each of the resulting precipitates is calcined to obtain a converted particle diameter determined from the density of the indium oxide powder and the BET specific surface area. An indium oxide powder having a (BET diameter) of more than 0.05 μm and 1 μm or less;
A tin oxide powder having a converted particle diameter (BET diameter) calculated from the density of the tin oxide powder and the BET specific surface area of more than 0.05 μm and not more than 1 μm was obtained, and the respective powders were mixed and molded.
A method for producing an indium oxide-tin oxide sintered body characterized by sintering in the range of ゜ C to 1650 ° C.

【0018】(4)インジウム塩と錫塩の混合水溶液と
錫塩の水溶液を、それぞれアルカリ性水溶液と反応さ
せ、得られたそれぞれの沈澱を焼成して、酸化インジウ
ム−酸化錫粉末の密度とBET比表面積から求めた換算
粒径(BET径)が0.05μmを超え1μm以下の酸化
インジウム−酸化錫粉末と、酸化錫粉末の密度とBET
比表面積から求めた換算粒径(BET径)が0.05μ
mを超え1μm以下の酸化錫粉末とを得、それぞれの粉末
を混合して成形し、1450゜C以上1650゜C以下の範
囲で焼結することを特徴とする酸化インジウム−酸化錫
焼結体の製造方法
(4) A mixed aqueous solution of an indium salt and a tin salt and an aqueous solution of a tin salt are respectively reacted with an alkaline aqueous solution, and each of the resulting precipitates is fired to obtain the density of the indium oxide-tin oxide powder and the BET ratio. Indium oxide-tin oxide powder having a converted particle diameter (BET diameter) determined from the surface area of more than 0.05 μm and 1 μm or less, the density of the tin oxide powder and the BET
The converted particle diameter (BET diameter) determined from the specific surface area is 0.05μ
Indium oxide-tin oxide sintered body characterized in that tin oxide powder having a particle size exceeding 1 m and not more than 1 μm is obtained, the respective powders are mixed, molded and sintered in the range of 1450 ° C. to 1650 ° C. Manufacturing method

【0019】(5)インジウム塩と錫塩の混合水溶液と
インジウム塩の水溶液を、それぞれアルカリ性水溶液と
反応させ、得られたそれぞれの沈澱を焼成して、酸化イ
ンジウム−酸化錫粉末の密度とBET比表面積から求め
た換算粒径(BET径)が0.05μmを超え1μm以下
の酸化インジウム−酸化錫粉末と、酸化インジウム粉末
の密度とBET比表面積から求めた換算粒径(BET
径)が0.05μmを超え1μm以下の酸化インジウム粉
末とを得、それぞれの粉末を混合して成形し、1450
゜C以上1650゜C以下の範囲で焼結することを特徴とす
る酸化インジウム−酸化錫焼結体の製造方法
(5) A mixed aqueous solution of an indium salt and a tin salt and an aqueous solution of an indium salt are reacted with an alkaline aqueous solution, respectively, and each of the resulting precipitates is fired to obtain the density of the indium oxide-tin oxide powder and the BET ratio. Indium oxide-tin oxide powder having a converted particle diameter (BET diameter) determined from the surface area of more than 0.05 μm and 1 μm or less, and a converted particle diameter (BET diameter) determined from the density of the indium oxide powder and the BET specific surface area
Indium oxide powder having a diameter of more than 0.05 μm and 1 μm or less is obtained, and the respective powders are mixed and molded.
A method for producing an indium oxide-tin oxide sintered body characterized by sintering in the range of ゜ C to 1650 ° C.

【0020】(6)(1)〜(5)の方法により製造さ
れることを特徴とする酸化インジウム−酸化錫焼結体の
製造方法 (7)(1)〜(6)の方法により製造される酸化イン
ジウム−酸化錫焼結体を原料として得られるITOスパ
ッタターゲット。以下に本発明について詳しく説明す
る。
(6) A method for producing an indium oxide-tin oxide sintered body characterized by being produced by the method of (1) to (5). (7) A method of producing an indium oxide-tin oxide sintered body by the method of (1) to (6). An ITO sputter target obtained by using an indium-tin oxide sintered body as a raw material. Hereinafter, the present invention will be described in detail.

【0021】[0021]

【発明の実施の形態】本発明に用いるインジウム塩とし
ては、塩化インジウム、硝酸インジウム、硫酸インジウ
ム、酢酸インジウム、蓚酸インジウム、フッ化インジウ
ム、臭化インジウム等が挙げられ、また、錫塩として
は、塩化第二錫、硝酸第二錫、硫酸第二錫、酢酸第二
錫、蓚酸第二錫、フッ化第二錫、臭化第二錫、塩化第一
錫、硝酸第一錫、硫酸第一錫、酢酸第一錫、蓚酸第一
錫、フッ化第一錫、臭化第一錫が挙げられ、さらに、ア
ルカリ性水溶液としては、アンモニア水、炭酸アンモニ
ウム水溶液、尿素水溶液、水酸化ナトリウム水溶液、水
酸化カリウム水溶液、水酸化ルビジウム水溶液、水酸化
バリウム水溶液等が挙げられる。
BEST MODE FOR CARRYING OUT THE INVENTION Indium salts used in the present invention include indium chloride, indium nitrate, indium sulfate, indium acetate, indium oxalate, indium fluoride, indium bromide, and the like. Stannic chloride, stannic nitrate, stannic sulfate, stannic acetate, stannic oxalate, stannic fluoride, stannic bromide, stannous chloride, stannous nitrate, stannous sulfate Tin, stannous acetate, stannous oxalate, stannous fluoride, stannous bromide. Further, as the alkaline aqueous solution, ammonia water, ammonium carbonate aqueous solution, urea aqueous solution, sodium hydroxide aqueous solution, water An aqueous solution of potassium oxide, an aqueous solution of rubidium hydroxide, an aqueous solution of barium hydroxide and the like can be given.

【0022】本発明において用いる、酸化インジウム−
酸化錫粉末、酸化インジウム粉末又は酸化錫粉末は、例
えば、次の方法により製造される。すなわち、まず、そ
れぞれ、インジウム塩と錫塩の水溶液、インジウム塩の
水溶液および錫塩の水溶液と、アルカリ性水溶液を反応
させ、インジウム及び/又は錫を含む沈澱を得、得られ
た沈殿を固液分離する。固液分離の方法とは特に限定さ
れず、デカンテーション、遠心分離、濾過等が挙げられ
る。濾過の方法としては、吸引濾過、フィルタープレス
等の方法が挙げられる。
Indium oxide used in the present invention
The tin oxide powder, indium oxide powder or tin oxide powder is produced, for example, by the following method. That is, first, an aqueous solution of an indium salt and a tin salt, an aqueous solution of an indium salt and an aqueous solution of a tin salt are reacted with an alkaline aqueous solution to obtain a precipitate containing indium and / or tin, and the obtained precipitate is subjected to solid-liquid separation. I do. The method of solid-liquid separation is not particularly limited, and examples include decantation, centrifugation, and filtration. Examples of the method of filtration include methods such as suction filtration and filter press.

【0023】固液分離した各沈澱は焼成するにあたり、
インジウム及び/又は錫がアルカリ性水溶液と反応して
生成した塩化アンモニウム、硝酸アンモニウム等のアン
モニウム塩、塩化ナトリウム、硝酸ナトリウム等のアル
カリ金属塩等の塩類を含んでいるので、焼成前に該沈殿
と共に生成した塩類を溶かす、水または水溶液または溶
媒で該沈澱を洗浄することが好ましい。本発明に用いる
生成した塩類を溶かす水若しくは水溶液または溶媒とし
ては、水、アンモニア水、メタノール、エタノール等の
アルコール類等が挙げられる。次いで、洗浄したインジ
ウム及び/又は錫を含む沈澱を乾燥する。乾燥方法とし
ては、加熱による通常の乾燥法、真空乾燥、凍結乾燥等
が挙げられる。
Each of the solid-liquid separated precipitates is fired,
Since indium and / or tin contains salts such as ammonium salts such as ammonium chloride and ammonium nitrate, and alkali metal salts such as sodium chloride and sodium nitrate formed by reacting with an alkaline aqueous solution, they are formed together with the precipitate before firing. Preferably, the precipitate is washed with water or an aqueous solution or solvent that dissolves the salts. Examples of the water or aqueous solution or solvent for dissolving the generated salts used in the present invention include water, aqueous ammonia, alcohols such as methanol and ethanol, and the like. Next, the precipitate containing the washed indium and / or tin is dried. Examples of the drying method include a normal drying method by heating, vacuum drying, freeze drying and the like.

【0024】上記方法で得られたインジウム及び/又は
錫を含む沈澱の乾燥物を焼成することによって酸化イン
ジウム−酸化錫粉末、酸化インジウム粉末又は酸化錫粉
末とする。各焼成温度は600〜1300℃の範囲が好
ましい。焼成温度が600℃未満では、結晶化が十分で
なかったり、インジウム及び/又は錫を含む沈澱に付着
した塩化アンモニウム等の塩の分解が不十分であったり
する。また焼成温度が1300℃を越える場合には、一
次粒子が結晶成長し一部が凝集して、焼結性が良好なそ
れぞれの酸化インジウム−酸化錫粉末、酸化インジウム
粉末又は酸化錫粉末が得られない場合がある。
The dried precipitate containing indium and / or tin obtained by the above method is calcined to obtain an indium oxide-tin oxide powder, an indium oxide powder or a tin oxide powder. Each firing temperature is preferably in the range of 600 to 1300 ° C. When the calcination temperature is lower than 600 ° C., crystallization is not sufficient, and decomposition of salts such as ammonium chloride attached to the precipitate containing indium and / or tin is insufficient. When the sintering temperature exceeds 1300 ° C., primary particles are crystal-grown and a part of the particles is aggregated to obtain respective indium oxide-tin oxide powder, indium oxide powder or tin oxide powder having good sinterability. May not be.

【0025】各焼成の雰囲気ガスとしては、空気、酸素
ガス、窒素ガス、ハロゲン化水素ガス、ハロゲンガス、
又はこれらの混合物が挙げられ、ハロゲン化水素ガスと
しては、塩化水素、臭化水素、ヨウ化水素、フッ化水素
等が挙げられ、ハロゲンガスとしては、塩素、臭素、ヨ
ウ素、フッ素等が挙げられる。ハロゲン化水素ガス又は
ハロゲンガスを含有する雰囲気下で焼成することが好ま
しく、粒子の形状が良好な凝集性が弱く、分散性に優れ
たそれぞれの酸化インジウム−酸化錫粉末、酸化インジ
ウム粉末又は酸化錫粉末を得ることができる。
The atmosphere gas for each firing is air, oxygen gas, nitrogen gas, hydrogen halide gas, halogen gas,
Or a mixture thereof.Examples of the hydrogen halide gas include hydrogen chloride, hydrogen bromide, hydrogen iodide, and hydrogen fluoride.Examples of the halogen gas include chlorine, bromine, iodine, and fluorine. . It is preferable to calcinate in an atmosphere containing a hydrogen halide gas or a halogen gas, the particle shape is good, the cohesion is weak, and the indium oxide-tin oxide powder, the indium oxide powder, or the tin oxide is excellent in dispersibility. A powder can be obtained.

【0026】ハロゲン化水素ガス又はハロゲンガスを含
有する雰囲気下で焼成する場合、雰囲気ガスの全体積に
対してハロゲン化水素ガス又はハロゲンガスを1体積%
以上、好ましくは5体積%、より好ましくは10体積%
以上含有する雰囲気ガス中にて焼成する。ハロゲン化水
素ガス又はハロゲンガスの希釈ガスとしてはアルゴン等
の不活性ガス、窒素あるいは空気またはこれらの混合ガ
スを用いることができる。
When firing in an atmosphere containing a hydrogen halide gas or a halogen gas, 1% by volume of the hydrogen halide gas or the halogen gas is used based on the total volume of the atmosphere gas.
Above, preferably 5% by volume, more preferably 10% by volume
It is fired in the atmosphere gas contained above. As a hydrogen halide gas or a diluent gas for the halogen gas, an inert gas such as argon, nitrogen, air, or a mixed gas thereof can be used.

【0027】各焼成における雰囲気ガスの圧力は特に限
定されず、工業的に用いられる範囲において任意に選ぶ
ことができる。適切な焼成の時間は雰囲気ガスの濃度や
焼成の温度にも依存するので必ずしも限定されないが、
好ましくは1分以上、より好ましくは10分以上であ
る。雰囲気ガスの供給源や供給方法は特に限定されな
い。原料であるインジウム及び/又は錫を含む原料が存
在する反応系に上記の雰囲気ガスを導入することができ
れば良い。
The pressure of the atmosphere gas in each firing is not particularly limited, and can be arbitrarily selected within a range used industrially. The appropriate baking time is not necessarily limited because it depends on the concentration of the atmosphere gas and the baking temperature.
Preferably it is 1 minute or more, more preferably 10 minutes or more. The supply source and supply method of the atmospheric gas are not particularly limited. It is sufficient that the above-mentioned atmospheric gas can be introduced into a reaction system in which a raw material containing indium and / or tin as a raw material exists.

【0028】焼成装置は必ずしも限定されず、所謂、焼
成炉を用いることができる。特に、ハロゲン化水素ガス
又はハロゲンガスを用いる場合、焼成炉はハロゲン化水
素ガス又はハロゲンガスに腐食されない材質で構成され
ていることが好ましい。さらに雰囲気を調製できる構造
を備えていることが望ましい。また、ハロゲン化水素ガ
ス又はハロゲンガスという腐食性ガスを用いるので、焼
成炉は気密性があることが望ましい。
The firing apparatus is not necessarily limited, and a so-called firing furnace can be used. In particular, when a hydrogen halide gas or a halogen gas is used, the firing furnace is preferably made of a material that is not corroded by the hydrogen halide gas or the halogen gas. Further, it is desirable to have a structure capable of adjusting the atmosphere. Further, since a corrosive gas such as a hydrogen halide gas or a halogen gas is used, it is desirable that the firing furnace has airtightness.

【0029】工業的には連続方法で焼成することが好ま
しく、例えば、トンネル炉等を用いることができる。腐
食性ガス雰囲気中での焼成の場合、焼成工程で用いられ
る装置、坩堝やボ−トは、アルミナ性、石英性、耐酸レ
ンガあるいはグラファイト製であることが好ましい。
From the industrial viewpoint, it is preferable to perform calcination by a continuous method. For example, a tunnel furnace or the like can be used. In the case of firing in a corrosive gas atmosphere, the apparatus, crucible and boat used in the firing step are preferably made of alumina, quartz, acid-resistant brick or graphite.

【0030】上記の製造方法により0.5μm以下程度
の微細な一次粒子からなる酸化インジウム−酸化錫粉
末、酸化インジウム粉末又は酸化錫粉末を取得すること
ができる。しかし、各粉末の凝集粒子径は、酸化インジ
ウム−酸化錫粉末、酸化インジウム粉末又は酸化錫粉末
を得ることができる。インジウム及び/又は錫を含む沈
殿を析出させる条件によっては1μm以上となり、例え
ば相対密度が90%を越えるような高密度のITO焼結
体が得られない場合もあるが、このような各粉末中の一
次粒子同士の凝集は弱く、軽度の解砕、例えばボ−ルミ
ルやジェットミル程度の解砕によって、容易に平均凝集
粒子径が1μm以下となり、高密度のITO焼結体が得
られるITO粉末が製造できる。
According to the above-mentioned production method, an indium oxide-tin oxide powder, an indium oxide powder or a tin oxide powder composed of fine primary particles of about 0.5 μm or less can be obtained. However, the aggregate particle diameter of each powder can be obtained as indium oxide-tin oxide powder, indium oxide powder or tin oxide powder. Depending on the conditions for depositing a precipitate containing indium and / or tin, the thickness may be 1 μm or more. For example, a high-density ITO sintered body having a relative density exceeding 90% may not be obtained. Agglomeration between primary particles is weak, and the average agglomeration particle diameter can be easily reduced to 1 μm or less by light pulverization, for example, pulverization using a ball mill or a jet mill. Can be manufactured.

【0031】また、焼成の際の雰囲気ガスとして、特に
ハロゲン化水素又はハロゲンガスを用いた場合、焼成後
の酸化インジウム−酸化錫粉末、酸化インジウム粉末又
は酸化錫粉末には塩素分が残存している場合があるが、
ハロゲン分が残存している場合があるが、このようなハ
ロゲン分は焼成後の各粉末の水洗や空気中等での再焼成
等により除去することができる。
When hydrogen halide or a halogen gas is used as the atmosphere gas during the firing, chlorine remains in the indium oxide-tin oxide powder, indium oxide powder or tin oxide powder after firing. May be
Halogen components may remain, but such halogen components can be removed by washing each powder after calcination with water or re-calcination in air or the like.

【0032】本発明においての酸化インジウム−酸化錫
焼結体中の酸化錫の含量は、1〜50重量%であり、通
常のITO薄膜に用いる場合、2〜20重量%である。
また、酸化インジウム−酸化錫粉末、酸化インジウム粉
末又は酸化錫粉末の各混合割合は、上記の酸化インジウ
ム−酸化錫焼結体の酸化錫の含量となるように任意に選
択することができる。
In the present invention, the content of tin oxide in the indium oxide-tin oxide sintered body is 1 to 50% by weight, and when used for a normal ITO thin film, 2 to 20% by weight.
The mixing ratio of the indium oxide-tin oxide powder, the indium oxide powder, or the tin oxide powder can be arbitrarily selected so as to be the tin oxide content of the indium oxide-tin oxide sintered body.

【0033】次に、ITO粉末、すなわち、酸化インジ
ウム−酸化錫粉末、酸化インジウム粉末と酸化錫粉末と
の混合粉末、酸化インジウム−酸化錫粉末と酸化錫粉末
との混合粉末、又は酸化インジウム−酸化錫粉末と酸化
インジウム粉末との混合粉末を焼結してITO焼結体を
製造する。酸化インジウム−酸化錫粉末、酸化インジウ
ム粉末又は酸化錫粉末の各々の粉末は、BET比表面積
と各粉末密度から求めた各換算粒径(BET径)が0.
05μmより大きく、1μm以下、好ましくは0.1μm
より大きく(を超え)、0.5μm以下のものを使用す
る。これにより相対密度が90%以上、好ましくは95
%以上の高密度のITO焼結体を得ることが可能とな
る。各々、 BET比表面積から求めた各換算粒径(B
ET径)が0.05μm以下である場合、粉末の凝集が
大きくなり、成形圧を上げても成形体密度が上がらなく
なり、低い成形体密度から焼結により高い密度に変化す
るので、収縮が大きくなり、焼結体に亀裂が生じたり、
場合によっては、焼結体が割れたりする。特に大型の焼
結体を得ようとする場合には、収縮の度合いが大きく、
焼結体は割れ易くなる。さらに粉末の凝集が大きいと1
軸加圧成形で成形するとき、圧力が全体にかかりづらく
成形体が層状に割れたりする。また、成形体の粉末のつ
まり方も均一になりづらく、焼結時に焼結体が反ったり
しやすくなる。
Next, ITO powder, ie, indium oxide-tin oxide powder, mixed powder of indium oxide powder and tin oxide powder, mixed powder of indium oxide-tin oxide powder and tin oxide powder, or indium oxide-oxide A mixed powder of tin powder and indium oxide powder is sintered to produce an ITO sintered body. Each of the indium oxide-tin oxide powder, the indium oxide powder and the tin oxide powder has a converted particle diameter (BET diameter) of 0. 0 determined from the BET specific surface area and each powder density.
More than 05μm, 1μm or less, preferably 0.1μm
Use larger (exceeding) 0.5 μm or less. Thereby, the relative density is 90% or more, preferably 95%.
% Or more of a high-density ITO sintered body can be obtained. Each converted particle size (B) determined from the BET specific surface area
When the (ET diameter) is 0.05 μm or less, the agglomeration of the powder becomes large, the compact density does not increase even when the compaction pressure is increased, and the compact density changes from a low compact density to a high density by sintering. Cracks in the sintered body,
In some cases, the sintered body cracks. Especially when trying to obtain a large sintered body, the degree of shrinkage is large,
The sintered body is easily broken. Furthermore, if the agglomeration of the powder is large,
When molding by axial pressure molding, pressure is hardly applied to the whole, and the molded body is cracked in layers. In addition, the powder of the molded body is hardly uniform, and the sintered body is likely to warp during sintering.

【0034】また、BET比表面積から求めた換算粒径
(BET径)が5μmを超えると、焼結は原料粉末粒子
の表面エネルギーを駆動力として起こるので十分な焼結
の駆動力が得られず、焼結が十分に起こらず、高密度な
焼結体を得ることは出来なくなる。高密度な焼結体を得
るためには、0.5μm以下の粉末を用いることが好ま
しい。
If the converted particle diameter (BET diameter) determined from the BET specific surface area exceeds 5 μm, sintering occurs with the driving force of the surface energy of the raw material powder particles, so that a sufficient driving force for sintering cannot be obtained. In addition, sintering does not sufficiently occur, and a high-density sintered body cannot be obtained. In order to obtain a high-density sintered body, it is preferable to use a powder of 0.5 μm or less.

【0035】次いで、上記の各粉末を成形し、板状、円
盤状等の特定の形を付与してから焼結を行う。成形方法
は特に限定されず、1軸加圧成形、冷間静水圧加圧法
(cold isostatic pressing、
CIP)、スリップキャスティング(泥漿鋳込み)成
形、フィルタープレス成形法、押出し成形法、射出成形
法等が挙げられる。上記成形法を単独で用いてもよく、
または上記成形法を組み合わせて用いてもよい。
Next, each of the above-mentioned powders is molded, given a specific shape such as a plate shape or a disk shape, and then sintered. The molding method is not particularly limited, and is uniaxial pressure molding, cold isostatic pressing, or cold isostatic pressing.
CIP), slip casting (slurry casting) molding, filter press molding, extrusion molding, injection molding, and the like. The above molding method may be used alone,
Alternatively, the above molding methods may be used in combination.

【0036】焼結の温度は1450゜C〜1650℃の範
囲が好ましい。焼結温度が1450゜C未満では、焼結密
度が十分上がらず、また、酸化インジウム中への酸化錫
の固溶も十分ではなく、抵抗値も低くならない。
The sintering temperature is preferably in the range of 1450 ° C. to 1650 ° C. If the sintering temperature is lower than 1450 ° C., the sintering density is not sufficiently increased, the solid solution of tin oxide in indium oxide is not sufficient, and the resistance value is not reduced.

【0037】焼結温度が1650℃を超えると、結晶粒
子の成長が起こりやすく、ITOスパッタターゲットの
強度が下がるという問題点がある。温度が高いとITO
成形体を置く材質に高融点で、ITOと反応性が少ない
特別な材料を選ばなければならなくなる。高い温度で焼
結できる電気炉は、特殊な構造をしており、電気炉のコ
ストが高くなる。また、高い温度で焼結させると電気炉
のいたみが激しく、電気炉運転のランニングコストも高
くなる。
If the sintering temperature exceeds 1650 ° C., there is a problem that crystal grains are likely to grow and the strength of the ITO sputter target is lowered. If the temperature is high, ITO
A special material having a high melting point and low reactivity with ITO must be selected as a material for placing the molded body. An electric furnace that can be sintered at a high temperature has a special structure, which increases the cost of the electric furnace. Further, when sintering at a high temperature, the electric furnace is severely damaged, and the running cost of operating the electric furnace also increases.

【0038】焼結雰囲気としては1気圧の酸素ガス含有
雰囲気中で行うことが好ましい。酸素ガスを含まない雰
囲気中、例えば窒素ガス中やアルゴンガス雰囲気中で高
温で焼結させると、ITOにとっては還元性雰囲気であ
り、酸化物の金属と酸素ガスへの解離が起こる。1気圧
の空気中など酸素ガスを含有する雰囲気中で焼結するこ
とが好ましい。さらに好ましくは、酸素ガスが100%
である酸素ガス雰囲気中で焼結する。圧力が1気圧より
大きい加圧した酸素ガス雰囲気で焼結する方法も提案さ
れているが、加圧酸素ガス雰囲気で焼結を行うには、加
圧に耐えられる特殊な焼結炉や装置を必要とし、コスト
が高くなる。また、高温の加圧酸素ガス雰囲気は安全性
の問題などがある。
The sintering is preferably performed in an atmosphere containing 1 atm of oxygen gas. If sintering is performed at a high temperature in an atmosphere containing no oxygen gas, for example, a nitrogen gas or an argon gas atmosphere, it is a reducing atmosphere for ITO, and dissociation of the oxide into metal and oxygen gas occurs. The sintering is preferably performed in an atmosphere containing oxygen gas, such as in air at 1 atm. More preferably, oxygen gas is 100%
In an oxygen gas atmosphere. A method of sintering in a pressurized oxygen gas atmosphere in which the pressure is greater than 1 atm has also been proposed, but in order to perform sintering in a pressurized oxygen gas atmosphere, a special sintering furnace or apparatus capable of withstanding the pressurization is required. Need and cost is high. Also, a high-temperature pressurized oxygen gas atmosphere has a problem of safety and the like.

【0039】本発明のITO焼結体の製造方法によれ
ば、焼結体の相対密度が90%以上、好ましくは95%
以上の高密度のITO焼結体が得られ、さらに、焼結を
行う雰囲気としては、好ましくは、例えば、空気のよう
な常圧の酸素ガスを含有する雰囲気中、さらに好ましく
は、純粋の酸素雰囲気中で行う。純酸素雰囲気とは酸素
ガスおよび不可避の不純物ガスを含む雰囲気にことを示
すものである。焼結を空気中や酸素ガス含有雰囲気下で
行うと97%以上、酸素中では98.5%以上の高密度
のITO焼結体が得られる。本発明の焼結体をスパッタ
リングターゲットとして用いた場合、ノジュールの低
減、スパッタリング効率の向上、パーティクルの減少、
異常放電の減少、成膜されたITO膜の高品質化などが
期待できる。
According to the method for producing an ITO sintered body of the present invention, the relative density of the sintered body is 90% or more, preferably 95%
The above-described high-density ITO sintered body is obtained, and the sintering is preferably performed, for example, in an atmosphere containing normal-pressure oxygen gas such as air, and more preferably in pure oxygen. Perform in an atmosphere. The pure oxygen atmosphere means an atmosphere containing an oxygen gas and an unavoidable impurity gas. When sintering is performed in air or in an atmosphere containing oxygen gas, a high-density ITO sintered body of 97% or more and 98.5% or more in oxygen can be obtained. When the sintered body of the present invention is used as a sputtering target, reduction of nodules, improvement of sputtering efficiency, reduction of particles,
It can be expected that abnormal discharge is reduced and the quality of the formed ITO film is improved.

【0040】本発明のITO焼結体を、研削、研磨して
インジウムはんだで、銅製バッキングプレートにボンデ
ィングする等の通常のITOターゲットを製造する方法
により液晶ディスプレー(LCD)用等の透明導電膜を
作製するためのスパッターターゲットが得られる。
A transparent conductive film for a liquid crystal display (LCD) or the like is manufactured by a method of manufacturing a normal ITO target such as grinding and polishing the ITO sintered body of the present invention and bonding it to a copper backing plate with indium solder. A sputter target for fabrication is obtained.

【0041】[0041]

【実施例】次に本発明を実施例によりさらに詳しく説明
するが、本発明はこれらの実施例に限定されるものでは
ない。
EXAMPLES Next, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples.

【0042】なお、本発明における各種測定は次のよう
にして行った。 1.焼結に使用したITO粉末のBET比表面積の測定 フロ−ソ−ブII、2300型(マイクロメリティクス
社製)を用いてBET比表面積を測定した。
Various measurements in the present invention were performed as follows. 1. Measurement of BET Specific Surface Area of ITO Powder Used for Sintering The BET specific surface area was measured using Flowsorb II, Model 2300 (manufactured by Micromeritics).

【0043】また、次式によってBET比表面積径(D
BET)を算出した。 DBET(μm)=6/(S*ρ) S=BET比表面積(m2/g) ρ=ITO粉末の密度(g/cm3) BET比表面積径(D BET)を求めるための粉末密
度は次式により7.16g/cm3とした。酸化インジ
ウムの密度7.18g/cm3と酸化錫の密度6.95
g/cm3と酸化錫の含量10wt%から次式により計
算した。
Also, the BET specific surface area diameter (D
BET) was calculated. DBET (μm) = 6 / (S * ρ) S = BET specific surface area (m 2 / g) ρ = density of ITO powder (g / cm 3 ) Powder density for obtaining BET specific surface area diameter (DBET) is as follows. It was 7.16 g / cm 3 according to the following equation. Density of indium oxide 7.18 g / cm 3 and density of tin oxide 6.95
It was calculated from the following formula based on g / cm 3 and tin oxide content of 10 wt%.

【0044】2.焼結後のITO焼結体の密度の測定 ITO焼結体のかさ密度は、JIS Z 8807−1
976およびJISR 2205-1992の測定法に
準じてアルキメデス法(浮力法)で求めた。相対密度を
出すための真密度はBET比表面積径(DBET)のとこ
ろで使用した粉末密度7.16g/cm3を用いた。
2. Measurement of Density of ITO Sintered Body After Sintering The bulk density of the ITO sintered body is determined according to JIS Z8807-1.
It was determined by the Archimedes method (buoyancy method) according to the measuring method of 976 and JISR 2205-1992. As a true density for obtaining a relative density, a powder density of 7.16 g / cm 3 used at a BET specific surface area diameter (DBET) was used.

【0045】実施例1 酸化物として計算した重量比〔SnO2/(In23
SnO2)〕が10%となるように混合した塩化イン
ジウムと塩化錫の混合水溶液に25%アンモニア水を滴
下して反応させた沈澱を固液分離した後、水で充分洗浄
を行い、110℃にて乾燥し、該乾燥物を1000℃か
ら空気で希釈した20体積%の塩化水素ガスを流しなが
ら、1200℃で30分間焼成した後に水洗してITO
粉末を得た。得られたITO粉末は、BET比表面積が
3.7m2/gでBET比表面積径が0.23μmであ
った。
Example 1 A weight ratio calculated as an oxide [SnO 2 / (In 2 O 3 +
[SnO 2 )] was added dropwise to a mixed aqueous solution of indium chloride and tin chloride at a concentration of 10%, and 25% aqueous ammonia was added dropwise. The precipitate was reacted and solid-liquid separated. Baked at 1200 ° C. for 30 minutes while flowing a 20% by volume hydrogen chloride gas diluted with air from 1000 ° C., and then washed with water.
A powder was obtained. The obtained ITO powder had a BET specific surface area of 3.7 m 2 / g and a BET specific surface area diameter of 0.23 μm.

【0046】該ITO粉末を、100kg/cm2
て一軸加圧成形後、3ton/cm2の圧力にてCIP
加圧をおこなった。得られた成形体を電気炉に入れ、電
気炉内を真空ポンプで0.2torrまで減圧し、酸素
ガス雰囲気に置換した。常圧になってからは、酸素ガス
を2l/分の流量でフローしながら焼結を行った。昇温
速度10゜C/分、1600℃、常圧の酸素ガス雰囲気中
にて10時間焼結してITO焼結体を得た。得られた焼
結体は、焼結体密度7.10g/cm3 で、相対密度
99.1%にまで緻密化した。
After the ITO powder was uniaxially pressed at 100 kg / cm 2 , CIP was applied at a pressure of 3 ton / cm 2 .
Pressurization was performed. The obtained compact was placed in an electric furnace, and the pressure in the electric furnace was reduced to 0.2 torr by a vacuum pump, and the atmosphere was replaced with an oxygen gas atmosphere. After reaching normal pressure, sintering was performed while flowing oxygen gas at a flow rate of 2 l / min. Sintering was performed for 10 hours in an oxygen gas atmosphere at 1600 ° C. and a normal pressure at a heating rate of 10 ° C./min to obtain an ITO sintered body. The obtained sintered body was densified to a sintered body density of 7.10 g / cm 3 and a relative density of 99.1%.

【0047】実施例2 実施例1と同様の方法で得られたITO成形体を電気炉
の入れ、焼結雰囲気を酸素中から空気中に変えた以外は
実施例1と同様の方法で焼結させた。得られた焼結体
は、焼結体密度6.98g/cm3 で、相対密度9
7.5%にまで緻密化した。
Example 2 An ITO molded body obtained by the same method as in Example 1 was placed in an electric furnace and sintered in the same manner as in Example 1 except that the sintering atmosphere was changed from oxygen to air. I let it. The obtained sintered body had a sintered body density of 6.98 g / cm 3 and a relative density of 9
Densified to 7.5%.

【0048】比較例1 実施例1と同様の方法で得られたITO成形体を電気炉
の入れ、焼結温度を1400゜Cに変えた以外は実施例1
と同様の方法で焼結させた。得られた焼結体は、焼結体
密度6.17g/cm3 で、相対密度86.2%しか
密度が上がっていなかった。
Comparative Example 1 An ITO molded body obtained in the same manner as in Example 1 was placed in an electric furnace, and the sintering temperature was changed to 1400 ° C.
Sintering was performed in the same manner as described above. The obtained sintered body had a sintered body density of 6.17 g / cm 3 and a relative density of only 86.2%.

【0049】比較例2 BET比表面積が0.1m2/gでBET比表面積径が
8.4μmである市販のITO粉末を、1000kg/
cm2 にて一軸加圧成形後、3ton/cm2の圧力に
てCIP加圧をおこなった。得られた成形体を実施例1
と同様の方法で焼結させた。得られた焼結体は、焼結体
密度4.86g/cm3 で、相対密度67.8%しか
密度が上がっていなかった。
Comparative Example 2 A commercially available ITO powder having a BET specific surface area of 0.1 m 2 / g and a BET specific surface area diameter of 8.4 μm was prepared at 1000 kg /
After uniaxial press molding at cm 2, and subjected to CIP pressing at a pressure of 3 ton / cm 2. Example 1
Sintering was performed in the same manner as described above. The resulting sintered body had a sintered body density of 4.86 g / cm 3 and a relative density of only 67.8%.

【0050】実施例3 金属インジウム(純度99.99%)57.40gを6
規定塩酸水溶液に溶解後、イオン交換水にて希釈して1
Lとしたインジウム塩水溶液から200mlと、金属錫
(純度99.99%)6.21gを濃塩酸水溶液に溶解
して100mlとした錫塩水溶液から21mlを採取し
混合して、インジウム塩と錫塩の混合水溶液221ml
を調整した。該インジウム塩と錫塩の混合水溶液中のイ
ンジウムと錫濃度は、それぞれ、In=51.95g/
lおよびSn=5.91g/lである。該インジウム塩
と錫塩の混合水溶液中と12.5%アンモニア水を、
pH=4.5に調整したイオン交換水400mlを入れ
て60℃に保持した1Lビ−カ−中に撹拌しながら、反
応中のpHを4.5に維持するように、35分かけて同
時に供給した。反応開始から2分間は、pH=3.0〜
5.2の範囲の変動が見られたが、それ以降は、pH=
4.4〜4.6の範囲に維持して反応させインジウムと
錫を含む沈殿を生成させた。反応終了後、60℃にて3
0分撹拌の後に、60℃にて6時間静置し、更に室温に
て14時間静置して沈澱を熟成した。熟成後の沈殿の沈
降容積は、理論的に得られるITO1g当たり3.5c
cであった。次に、吸引濾過(内径約76mmのブフナ
ー型ロート(ニッカトー社製、濾過ろーと ブフナー
型)、定量濾紙(アドバンテック東洋社製、定量濾紙N
o.5C)、アスピレーター(ヤマト科学社製、HAN
DY ASPIRATOR)使用)にて沈殿を採取し、
イオン交換水約120mlにて10回洗浄した。濾過お
よび洗浄に要した時間は1時間であり、濾過性に優れ、
操作は非常に容易であった。また、この沈殿を110℃
にて乾燥したところ、乾燥物は容易に解砕できた。次
に、該乾燥物を、アルミナ製のボ−トに充填した。焼成
は石英製炉芯管(直径58mm、長さ1200mm)を
用いた管状炉(株式会社モトヤマ製、MS電気炉)で行
った。昇温速度は900℃までは10℃/分、1100
℃までは5℃/分とした。雰囲気ガスとしては、室温か
ら1000℃までは空気のみを流し、1000℃から2
0体積%の塩化水素ガス(空気希釈)を流しながら、1
100℃で30分間焼成した後に、空気のみを流して冷
却し、水洗、乾燥してITO粉末を得た。塩化水素ガス
は鶴見ソ−ダ(株)製のボンベ塩化水素(純度99.9
%)を用いた。得られたITO粉末は、酸化錫含有量が
9.9重量%、BET比表面積が8.2m2 /gでB
ET比表面積径が0.10μm、累積粒度分布の50%
径が0.33μmであった。また、該ITO粉末を走査
型電子顕微鏡(日本電子株式会社製:JSM−T220
型)で観察したところ、一次粒子径が約0.1μmで、一
次粒子同士の凝集が弱いITO粉末であった。得られた
ITO粉末を直径10mmの円板状に成形して、160
0℃にて10時間焼結した結果、焼結体密度7.09g
/cm3 で、相対密度の99.1%にまで緻密化した
ITO焼結体が得られた。
Example 3 57.40 g of metal indium (99.99% purity) was added to 6
Dissolve in normal hydrochloric acid aqueous solution and dilute with ion exchange water
200 ml of an indium salt aqueous solution prepared as L and 6.21 g of metallic tin (purity: 99.99%) dissolved in a concentrated hydrochloric acid aqueous solution to obtain 100 ml of a tin salt aqueous solution, and 21 ml were collected and mixed. 221 ml of a mixed aqueous solution of
Was adjusted. The indium and tin concentrations in the mixed aqueous solution of the indium salt and the tin salt were respectively In = 51.95 g /
1 and Sn = 5.91 g / l. In a mixed aqueous solution of the indium salt and the tin salt and 12.5% ammonia water,
While stirring 400 ml of ion-exchanged water adjusted to pH = 4.5 and keeping it at 1 ° C. in a 1 L beaker maintained at 60 ° C., simultaneously maintain the pH during the reaction at 4.5 while taking 35 minutes. Supplied. For 2 minutes from the start of the reaction, pH = 3.0 to 3.0
Variations in the range of 5.2 were seen, after which pH =
The reaction was maintained at a range of 4.4 to 4.6 to produce a precipitate containing indium and tin. After the reaction is completed,
After stirring for 0 minutes, the mixture was left standing at 60 ° C. for 6 hours, and further left still at room temperature for 14 hours to mature the precipitate. The sedimentation volume of the sediment after aging is 3.5 c / g of theoretically obtained ITO.
c. Next, suction filtration (Buchner type funnel with an inner diameter of about 76 mm (manufactured by Nikkato Co., Ltd., filtration filter and Buchner type)), quantitative filter paper (manufactured by Advantech Toyo, quantitative filter paper N
o. 5C), aspirator (HAN, manufactured by Yamato Scientific Co., Ltd.)
DY ASPIRATOR)), collect the precipitate,
Washing was performed 10 times with about 120 ml of ion-exchanged water. The time required for filtration and washing is 1 hour, excellent in filterability,
The operation was very easy. In addition, this precipitate is kept at 110 ° C.
The dried product was easily crushed. Next, the dried product was filled in an alumina boat. The firing was performed in a tubular furnace (MS electric furnace, manufactured by Motoyama Co., Ltd.) using a quartz furnace core tube (diameter 58 mm, length 1200 mm). The heating rate is 10 ° C./min up to 900 ° C., 1100
Up to 5 ° C / min. As the atmosphere gas, only air is allowed to flow from room temperature to 1000 ° C., and from 1000 ° C. to 2 ° C.
While flowing 0% by volume of hydrogen chloride gas (air dilution), 1
After baking at 100 ° C. for 30 minutes, the mixture was cooled by flowing only air, washed with water and dried to obtain ITO powder. Hydrogen chloride gas was a cylinder hydrogen chloride (purity 99.9) manufactured by Tsurumi Soda Co., Ltd.
%). The obtained ITO powder had a tin oxide content of 9.9% by weight, a BET specific surface area of 8.2 m 2 / g and a B
ET specific surface area diameter 0.10μm, 50% of cumulative particle size distribution
The diameter was 0.33 μm. Further, the ITO powder was subjected to a scanning electron microscope (JSM-T220 manufactured by JEOL Ltd.).
Observation by a mold) revealed that the ITO powder had a primary particle diameter of about 0.1 μm and weak aggregation of the primary particles. The obtained ITO powder was formed into a disk having a diameter of 10 mm,
As a result of sintering at 0 ° C. for 10 hours, the sintered body density was 7.09 g.
/ Cm 3 , an ITO sintered body densified to 99.1% of the relative density was obtained.

【0051】実施例4 実施例3で得られた、酸化錫含有量が9.9重量%、B
ET比表面積径が0.1μm、累積粒度分布の50%径
が0.33μmのITO粉末を、直径10mmの円板状
に成形して、1500℃にて10時間焼結した結果、焼
結体密度7.06g/cm3 で、相対密度の98.5
%にまで緻密化したITO焼結体が得られた。
Example 4 The tin oxide content obtained in Example 3 was 9.9% by weight, B
As a result of molding an ITO powder having an ET specific surface area diameter of 0.1 μm and a 50% diameter of a cumulative particle size distribution of 0.33 μm into a disk having a diameter of 10 mm and sintering at 1500 ° C. for 10 hours, a sintered body was obtained. With a density of 7.06 g / cm 3 and a relative density of 98.5
% Was obtained.

【0052】実施例5 金属インジウム57.40gを濃塩酸水溶液に溶解して
120mLとしたインジウム塩水溶液から106ml
と、金属スズ5.81gを濃塩酸水溶液に溶解して93
mlとした錫塩水溶液から90mlを採取し混合して、
インジウム塩と錫塩の混合水溶液196mlを調整し
た。該インジウム塩と錫塩の混合水溶液中のインジウム
と錫濃度は、それぞれ、In=258.69g/lおよ
びSn=28.68g/lである。該インジウム塩と錫
塩の混合水溶液中と12.5%アンモニア水を、 pH
=4.5に調整したイオン交換水400mlを入れて6
0℃に保持した1Lビ−カ−中に撹拌しながら、反応中
のpHを4.5に維持するように、69分かけて同時に
供給した。反応開始から2分間は、pH=3.1〜5.
4の範囲の変動が見られたが、それ以降はpH=4.4
〜4.6の範囲に維持して反応させインジウムと錫を含
む沈殿を生成させた。反応終了後、60℃にて30分撹
拌の後に、60℃にて6時間静置し、更に室温にて14
時間静置して沈澱を熟成した。熟成後の沈殿の沈降容積
は、理論的に得られるITO1g当たり1.3ccであ
った。次に、吸引濾過(内径135mmのブフナー型ロ
ート、定量濾紙No.5C、アスピレーター使用)にて
沈殿を採取し、イオン交換水約120mlにて10回洗
浄した。濾過および洗浄に要した時間は1時間であり、
濾過性に優れ、操作は非常に容易であった。また、この
沈殿を110℃にて乾燥したところ、乾燥物は容易に解
砕できた。次に、該乾燥物を、アルミナ製のボ−トに充
填した。焼成は石英製炉芯管(直径58mm、長さ12
00mm)を用いた管状炉(株式会社モトヤマ製、MS
電気炉)で行った。昇温速度は900℃までは10℃/
分、1100℃までは5℃/分とした。雰囲気ガスとし
ては、室温から1000℃までは空気のみを流し、10
00℃から20体積%の塩化水素ガス(空気希釈)を流
しながら、1100℃で30分間焼成した後に、空気の
みを流して冷却し、水洗、乾燥してITO粉末を得た。
塩化水素ガスは鶴見ソ−ダ(株)製のボンベ塩化水素
(純度99.9%)を用いた。得られたITO粉末は、
酸化錫含有量が10.5重量%、BET比表面積が6.
1m2/gでBET比表面積径が0.14μmで、累積
粒度分布の50%径が1.1μmであり、該ITO粉末
を走査型電子顕微鏡で観察したところ、一次粒子径が約
0.1μmで、かつ一次粒子同士の凝集が弱い粉末であっ
た。また、該粉末を乾式解砕処理することによって、B
ET比表面積が8.7m2/gでBET比表面積径が
0.10μm、累積粒度分布の50%径が0.39μm
のITO粉末となった。得られた解砕後のITO粉末
を、直径10mmの円板状に成形して、1600℃にて
10時間焼結した結果、焼結体密度7.06g/cm3
で、相対密度の98.6%にまで緻密化したITO焼
結体が得られた。
Example 5 57.40 g of metal indium was dissolved in a concentrated hydrochloric acid aqueous solution to make 120 mL, and 106 ml of an indium salt aqueous solution was dissolved.
And 5.81 g of metal tin dissolved in a concentrated hydrochloric acid aqueous solution to obtain 93
90 ml from the aqueous tin salt solution was mixed and mixed.
196 ml of a mixed aqueous solution of an indium salt and a tin salt was prepared. The indium and tin concentrations in the mixed aqueous solution of the indium salt and the tin salt are In = 258.69 g / l and Sn = 28.68 g / l, respectively. The mixed aqueous solution of the indium salt and the tin salt and 12.5% ammonia water were adjusted to pH
= 400 ml of ion exchange water adjusted to 4.5
While stirring in a 1 L beaker maintained at 0 ° C., the mixture was fed simultaneously over 69 minutes so as to maintain the pH during the reaction at 4.5. For 2 minutes from the start of the reaction, pH = 3.1-5.
4, but thereafter pH = 4.4.
The reaction was maintained at a range of ~ 4.6 to produce a precipitate containing indium and tin. After the completion of the reaction, the mixture was stirred at 60 ° C. for 30 minutes, left at 60 ° C. for 6 hours, and further stirred at room temperature for 14 hours.
The precipitate was aged by allowing to stand for a period of time. The sedimentation volume of the precipitate after aging was 1.3 cc / g of theoretically obtained ITO. Next, the precipitate was collected by suction filtration (Buchner-type funnel having an inner diameter of 135 mm, quantitative filter paper No. 5C, using an aspirator), and washed 10 times with about 120 ml of ion-exchanged water. The time required for filtration and washing is 1 hour,
The filterability was excellent, and the operation was very easy. When this precipitate was dried at 110 ° C., the dried product could be easily broken. Next, the dried product was filled in an alumina boat. Firing is performed using a quartz furnace core tube (diameter 58 mm, length 12
00 mm) (MS manufactured by Motoyama Corporation, MS)
(Electric furnace). The heating rate is 10 ° C / 900 ° C.
Min., Up to 1100 ° C., at 5 ° C./min. As atmosphere gas, only air is allowed to flow from room temperature to 1000 ° C.
After baking at 1100 ° C. for 30 minutes while flowing hydrogen chloride gas (diluted with air) from 00 ° C. to 20% by volume, the mixture was cooled by flowing only air, washed with water and dried to obtain ITO powder.
As the hydrogen chloride gas, a cylinder hydrogen chloride (purity: 99.9%) manufactured by Tsurumi Soda Co., Ltd. was used. The obtained ITO powder is
5. A tin oxide content of 10.5% by weight and a BET specific surface area of 6.
At 1 m 2 / g, the BET specific surface area diameter was 0.14 μm, and the 50% diameter of the cumulative particle size distribution was 1.1 μm. When the ITO powder was observed with a scanning electron microscope, the primary particle diameter was about 0.1 μm. The powder was a powder having weak primary particles. By subjecting the powder to dry crushing, B
The ET specific surface area is 8.7 m 2 / g, the BET specific surface area diameter is 0.10 μm, and the 50% diameter of the cumulative particle size distribution is 0.39 μm.
Of ITO powder. The obtained crushed ITO powder was formed into a disk having a diameter of 10 mm and sintered at 1600 ° C. for 10 hours. As a result, the sintered body density was 7.06 g / cm 3.
Thus, an ITO sintered body densified to 98.6% of the relative density was obtained.

【0053】実施例6 金属インジウム252.60gを濃塩酸水溶液に溶解し
て680mLとしたインジウム塩水溶液と、金属スズ5
3.95gを濃塩酸水溶液に溶解して230mlとした
錫塩水溶液から117mlを採取し混合後、濃アンモニ
ア水を63ml添加して、インジウム塩と錫塩の混合水
溶液860mlを調整した。該インジウム塩と錫塩の混
合水溶液中のインジウムと錫濃度は、それぞれ、In=
293.72g/lおよびSn=31.91g/lであ
る。該インジウム塩と錫塩の混合水溶液中と12.5%
アンモニア水を、 pH=5.0に調整したイオン交換
水2000mlを入れて60℃に保持した5Lビ−カ−
中に撹拌しながら、 pHを5.0に維持するように、
84分かけて同時に供給した。反応中のpH変動は、反
応開始から2分間は、pH=3.6〜5.5の範囲の変
動が見られたが、それ以降は、pH=4.8〜5.2の
範囲に維持して反応させインジウムと錫を含む沈殿を生
成させた。反応終了後、60℃にて30分撹拌の後に、
60℃にて6時間静置し、更に室温にて14時間静置し
て沈澱を熟成した。熟成後の沈殿の沈降容積は、理論的
に得られるITO1g当たり1.1ccであった。次
に、熟成後の沈澱を含む懸濁液を再度撹拌しながら、濃
アンモニア水を添加してpH=8.5に調整した後に、
吸引濾過(内径195mmのブフナー型ロート、定量濾
紙No.5C、アスピレーター使用)にて沈殿を採取
し、イオン交換水にアンモニア水を添加してpH=10
に調整したアンモニア水約2Lにて5回洗浄した。濾過
および洗浄に要した時間は25分であり、濾過性に優
れ、操作は非常に容易であった。また、この沈殿を11
0℃にて乾燥したところ、乾燥物は容易に解砕できた。
次に、該乾燥物を、石英製のボ−トに充填した。充填量
は360g、充填深さは10mm程度とした。焼成は石
英製炉芯管(直径160mm、長さ1600mm)を挿
入した高温箱型電気炉(モリサワ理工株式会社製)で行
った。昇温速度は、1100℃までは5℃/分とした。
雰囲気ガスとしては、室温から1000℃までは空気の
みを流し、1000℃から20体積%の塩化水素ガス
(空気希釈)を流しながら、1100℃で40分間焼成
した後に、空気のみを流して冷却し、水洗、乾燥してI
TO粉末を得た。塩化水素ガスは鶴見ソ−ダ(株)製の
ボンベ塩化水素(純度99.9%)を用いた。得られた
ITO粉末は、BET比表面積が3.3m2/gでBE
T比表面積径が0.25μmで、累積粒度分布の50%
径が2.6μmで、該ITO粉末を走査型電子顕微鏡で
観察したところ、一次粒子径約0.1〜0.2μmで、
一次粒子同士の凝集が弱い粉末であった。また、該粉末
を湿式解砕処理することによって、BET比表面積が
5.1m2/gでBET比表面積径が0.16μm、累
積粒度分布の50%径が0.48μmのITO粉末とな
った。また、該ITO粉末の塩素含有量は0.05%以
下であった。得られた、解砕後のITO粉末を、直径9
0mmの円板状に成形して、1600℃にて10時間焼
結した結果、焼結体密度7.15g/cm3 で、相対
密度の99.8%にまで緻密化したITO焼結体が得ら
れた。
Example 6 An indium salt aqueous solution prepared by dissolving 252.60 g of metal indium in a concentrated hydrochloric acid aqueous solution to make 680 mL, and metal tin 5
3.95 g was dissolved in a concentrated hydrochloric acid aqueous solution, and 117 ml was collected from a 230 ml tin salt aqueous solution. After mixing and mixing, 63 ml of concentrated ammonia water was added to prepare 860 ml of a mixed aqueous solution of an indium salt and a tin salt. The indium and tin concentrations in the mixed aqueous solution of the indium salt and the tin salt were In =
293.72 g / l and Sn = 31.91 g / l. 12.5% in the mixed aqueous solution of the indium salt and the tin salt
A 5 L beaker containing 2000 ml of ion-exchanged water adjusted to pH = 5.0 with ammonia water and maintained at 60 ° C.
While stirring, so as to maintain the pH at 5.0,
The feed was simultaneous over 84 minutes. During the reaction, the pH fluctuated in the range of pH = 3.6 to 5.5 for 2 minutes from the start of the reaction, but was maintained in the range of pH = 4.8 to 5.2 thereafter. To form a precipitate containing indium and tin. After completion of the reaction, after stirring at 60 ° C. for 30 minutes,
The mixture was allowed to stand at 60 ° C. for 6 hours and then at room temperature for 14 hours to mature the precipitate. The sedimentation volume of the precipitate after aging was 1.1 cc / g of theoretically obtained ITO. Next, while the suspension containing the precipitate after aging was stirred again, concentrated aqueous ammonia was added to adjust the pH to 8.5, and then
The precipitate was collected by suction filtration (Buchner-type funnel with an inner diameter of 195 mm, quantitative filter paper No. 5C, using an aspirator), and ammonia water was added to ion-exchanged water to obtain a pH of 10
Washed 5 times with about 2 L of aqueous ammonia adjusted to. The time required for filtration and washing was 25 minutes, the filterability was excellent, and the operation was very easy. In addition, this precipitate
When dried at 0 ° C., the dried product could be easily crushed.
Next, the dried product was filled in a quartz boat. The filling amount was 360 g, and the filling depth was about 10 mm. The firing was performed in a high-temperature box-type electric furnace (manufactured by Morisawa Riko Co., Ltd.) into which a quartz furnace core tube (diameter 160 mm, length 1600 mm) was inserted. The heating rate was 5 ° C./min up to 1100 ° C.
As the atmosphere gas, only air is flowed from room temperature to 1000 ° C., and calcined at 1100 ° C. for 40 minutes while flowing hydrogen chloride gas (diluted with air) from 1000 ° C. to 20% by volume. , Washed with water, dried and I
TO powder was obtained. As the hydrogen chloride gas, a cylinder hydrogen chloride (purity: 99.9%) manufactured by Tsurumi Soda Co., Ltd. was used. The obtained ITO powder has a BET specific surface area of 3.3 m 2 / g and a BE
T specific surface area diameter 0.25μm, 50% of cumulative particle size distribution
When the diameter was 2.6 μm and the ITO powder was observed with a scanning electron microscope, the primary particle diameter was about 0.1 to 0.2 μm.
It was a powder in which aggregation of the primary particles was weak. In addition, the powder was subjected to wet pulverization to give an ITO powder having a BET specific surface area of 5.1 m 2 / g, a BET specific surface area of 0.16 μm, and a 50% diameter of the cumulative particle size distribution of 0.48 μm. . Further, the chlorine content of the ITO powder was 0.05% or less. The obtained crushed ITO powder was crushed to a diameter of 9%.
As a result of forming into a 0 mm disk shape and sintering at 1600 ° C. for 10 hours, an ITO sintered body having a sintered body density of 7.15 g / cm 3 and a density of 99.8% of the relative density was obtained. Obtained.

【0054】実施例7 5Lビ−カ−中にpH=5.0に調整したイオン交換水
2000mlを入れて50℃に保持したこと、また、こ
の50℃のイオン交換水を撹拌しながら、実施例6と同
じインジウム塩と錫塩の混合水溶液と12.5%アンモ
ニア水を、反応中のpHを5.0に維持するように、8
1分かけて同時に供給した以外は、実施例6と同様な方
法でITO粉末を得た。反応中のpH変動は、反応開始
から2分間は、pH=3.6〜6.5の範囲の変動が見
られたが、それ以降は、pH=4.8〜5.3の範囲に
維持して反応させインジウムと錫を含む沈殿を生成させ
た。反応終了後、60℃にて30分撹拌の後に、60℃
にて6時間静置し、更に室温にて14時間静置して沈澱
を熟成した。熟成後の沈殿の沈降容積は、理論的に得ら
れるITO1g当たり1.7ccであった。次に、熟成
後の沈澱を含む懸濁液を再度撹拌しながら、濃アンモニ
ア水を添加してpH=8.6に調整した後に、吸引濾過
(内径195mmのブフナー型ロート、定量濾紙No.
5C、アスピレーター使用)にて沈殿を採取し、イオン
交換水にアンモニア水を添加してpH=10に調整した
アンモニア水約2Lにて5回洗浄した。濾過および洗浄
に要した時間は30分であり、濾過性に優れ、操作は非
常に容易であった。また、この沈殿を110℃にて乾燥
したところ、乾燥物は容易に解砕できた。次に、該乾燥
物を 実施例5の焼成方法により焼成後、水洗、乾燥し
て得られたITO粉末は、BET比表面積が3.2m2
/gでBET比表面積径が0.26μmで、累積粒度分
布の50%径が2.8μmで、該ITO粉末を走査型電
子顕微鏡で観察したところ、一次粒子径が0.1〜0.
2μmで、一次粒子同士の凝集が弱い粉末であった。ま
た、該ITO粉末を湿式解砕処理することによって、B
ET比表面積が5.1m2 /gでBET比表面積径が
0.16μm、累積粒度分布の50%径が0.52μm
のITO粉末となった。得られた、解砕後のITO粉末
を、直径20mmの円板状に成形して、1600℃にて
10時間焼結した結果、焼結体密度7.15g/cm3
で、相対密度の99.8%にまで緻密化したITO焼
結体が得られた。
Example 7 2000 ml of ion-exchanged water adjusted to pH = 5.0 was placed in a 5 L beaker and kept at 50 ° C. The stirring was carried out while stirring the 50 ° C. ion-exchanged water. The same mixed aqueous solution of indium salt and tin salt as in Example 6 and 12.5% aqueous ammonia were mixed with each other so that the pH during the reaction was maintained at 5.0.
An ITO powder was obtained in the same manner as in Example 6, except that the powder was simultaneously supplied over 1 minute. As for the pH fluctuation during the reaction, a fluctuation in the range of pH = 3.6 to 6.5 was observed for 2 minutes from the start of the reaction, but thereafter, the pH was maintained in the range of 4.8 to 5.3. To form a precipitate containing indium and tin. After completion of the reaction, the mixture was stirred at 60 ° C for 30 minutes, and then stirred at 60 ° C.
For 6 hours, and further left at room temperature for 14 hours to mature the precipitate. The sedimentation volume of the precipitate after aging was 1.7 cc / g of theoretically obtained ITO. Next, while the suspension containing the precipitate after aging was stirred again, concentrated ammonia water was added to adjust the pH to 8.6, followed by suction filtration (Buchner type funnel having an inner diameter of 195 mm, quantitative filter paper No. 1).
The precipitate was collected with 5C, using an aspirator), and washed five times with about 2 L of aqueous ammonia adjusted to pH = 10 by adding aqueous ammonia to ion-exchanged water. The time required for filtration and washing was 30 minutes, the filterability was excellent, and the operation was very easy. When this precipitate was dried at 110 ° C., the dried product could be easily broken. Next, the dried product was fired by the firing method of Example 5, washed with water and dried to obtain an ITO powder having a BET specific surface area of 3.2 m 2.
/ G, the BET specific surface area diameter was 0.26 μm, the 50% diameter of the cumulative particle size distribution was 2.8 μm, and the ITO powder was observed with a scanning electron microscope.
The powder was 2 μm in which the primary particles were weakly aggregated. In addition, by subjecting the ITO powder to a wet crushing treatment,
The ET specific surface area is 5.1 m 2 / g, the BET specific surface area diameter is 0.16 μm, and the 50% diameter of the cumulative particle size distribution is 0.52 μm.
Of ITO powder. The obtained crushed ITO powder was formed into a disc having a diameter of 20 mm, and sintered at 1600 ° C. for 10 hours. As a result, the sintered body density was 7.15 g / cm 3.
Thus, an ITO sintered body densified to 99.8% of the relative density was obtained.

【0055】比較例3 実施例4で得た、酸化錫含有量が10.5重量%、BE
T比表面積が6.1m 2/gでBET比表面積径が0.
14μmで、累積粒度分布の50%径が1.1μmの、
乾式解砕処理を行わなかったITO粉末を直径10mm
の円板状に成形して、1600℃にて10時間焼結した
結果、焼結体密度6.34g/cm3で、相対密度の8
8.5%にまでしか緻密化しなかった。
Comparative Example 3 The tin oxide content obtained in Example 4 was 10.5% by weight, BE
T specific surface area is 6.1m Two/ G and the BET specific surface area diameter is 0.
14 μm, 50% diameter of the cumulative particle size distribution is 1.1 μm,
10 mm diameter ITO powder that has not been subjected to dry crushing
And sintered at 1600 ° C for 10 hours
As a result, the sintered body density was 6.34 g / cm.ThreeAnd the relative density of 8
It densified only to 8.5%.

【0056】比較例4 実施例7と同様な方法で得た沈澱を吸引濾過後、2重量
%の塩化アンモニウム水溶液約2lにて3回洗浄した。
濾過および洗浄に要した時間は23分であり、濾過性に
優れ、操作は非常に容易であった。また、この沈殿を1
10℃にて乾燥したところ、乾燥物は容易に解砕でき
た。次に、塩化アンモニウムが付着した該乾燥物を、実
施例3の焼成方法により、1000℃から20体積%の
塩化水素ガス(空気希釈)を流しながら、1100℃で
30分間焼成した後に、水洗、乾燥してITO粉末を得
た。得られたITO粉末は、BET比表面積が3.8m
2/gでBET比表面積径が0.22μmで、累積粒度
分布の50%径が1.2μmで、該ITO粉末を走査型
電子顕微鏡で観察したところ、一次粒子径が0.1〜
0.2μmで一次粒子同士の凝集が弱いITO粉末であ
った。次に、該ITO粉末を乾式解砕処理することによ
って、BET比表面積が7.4m2 /gでBET比表
面積径が0.11μm、累積粒度分布の50%径が0.
43μmのITO粉末となった。また、該ITO粉末の
塩素含有量は0.28%であった。乾式解砕を行った上
記ITO粉末を直径20mmの円板状に成形して、16
00℃にて10時間焼結した結果、焼結体密度6.06
g/cm3 で、相対密度の84.7%にまでしか緻密
化しなかった。以上の結果を下記の表1に纏める。
Comparative Example 4 The precipitate obtained in the same manner as in Example 7 was filtered by suction and washed three times with about 2 l of a 2% by weight aqueous solution of ammonium chloride.
The time required for filtration and washing was 23 minutes, the filterability was excellent, and the operation was very easy. In addition, this precipitate
When dried at 10 ° C., the dried product could be easily crushed. Next, the dried product to which ammonium chloride was adhered was calcined at 1100 ° C. for 30 minutes by flowing the hydrogen chloride gas (diluted with air) at 1000 ° C. to 20% by the calcining method of Example 3, and then washed with water. Drying gave an ITO powder. The obtained ITO powder has a BET specific surface area of 3.8 m.
2 / g, the BET specific surface area was 0.22 μm, the 50% diameter of the cumulative particle size distribution was 1.2 μm, and the ITO powder was observed with a scanning electron microscope.
It was an ITO powder with a primary particle size of 0.2 μm and weak aggregation of primary particles. Next, the ITO powder was subjected to dry pulverization treatment to have a BET specific surface area of 7.4 m 2 / g, a BET specific surface area of 0.11 μm, and a 50% diameter of the cumulative particle size distribution of 0.1%.
It became 43 μm ITO powder. Further, the chlorine content of the ITO powder was 0.28%. The dry crushed ITO powder was formed into a disc having a diameter of 20 mm,
As a result of sintering at 00 ° C. for 10 hours, the sintered body density was 6.06.
At g / cm 3 , densification was only up to 84.7% of the relative density. The above results are summarized in Table 1 below.

【0057】[0057]

【表1】 BET径(μm) 温度 雰囲気 焼結体密度 相対密度 実施例1 0.23 1600゜C 酸素中 7.10 99.1 実施例2 0.23 1600゜C 空気中 6.98 97.5 比較例1 0.23 1400゜C 酸素中 6.17 86.2 比較例2 8.4 1600゜C 酸素中 4.86 67.8 実施例3 0.10 1600゜C 酸素中 7.09 99.1 実施例4 0.10 1500゜C 酸素中 7.06 98.5 実施例5 0.10 1600゜C 酸素中 7.06 98.6 実施例6 0.16 1600゜C 酸素中 7.15 99.8 実施例7 0.16 1600゜C 酸素中 7.15 99.8 比較例3 0.14 1600゜C 酸素中 6.34 88.5 比較例4 0.11 1600゜C 酸素中 6.06 84.7Table 1 BET diameter (μm) Temperature Atmosphere Sintered body density Relative density Example 1 0.23 1600 ° C In oxygen 7.10 99.1 Example 2 0.23 1600 ° C In air 6.98 97. 5 Comparative Example 1 0.23 1400 ° C in oxygen 6.17 86.2 Comparative Example 2 8.4 1600 ° C In oxygen 4.86 67.8 Example 3 0.10 1600 ° C in oxygen 7.09999 0.1 Example 4 0.10 1500 ° C in oxygen 7.06 98.5 Example 5 0.10 1600 ° C in oxygen 7.06 98.6 Example 6 0.16 1600 ° C in oxygen 7.15 99.8 Example 7 0.16 1600 ° C in oxygen 7.15 99.8 Comparative Example 3 0.14 1600 ° C in oxygen 6.34 88.5 Comparative Example 4 0.11 1600 ° C in oxygen 6. 06 84.7

【0058】[0058]

【発明の効果】本発明のITO焼結体の製造方法によれ
ば、焼結密度の高い緻密なITO焼結体を容易に得るこ
とができ、本発明方法で得られる高密度ITO焼結体は
ITOスパッタターゲットとしての優れた特性を有し、
工業的に有用なものである。
According to the method for manufacturing an ITO sintered body of the present invention, a dense ITO sintered body having a high sintering density can be easily obtained, and the high-density ITO sintered body obtained by the method of the present invention can be obtained. Has excellent properties as an ITO sputter target,
It is industrially useful.

Claims (17)

【特許請求の範囲】[Claims] 【請求項1】インジウムと錫と酸素からなる粉末を成形
して焼結させる酸化インジウム−酸化錫焼結体の製造方
法において、酸化インジウム−酸化錫粉末の密度とBE
T比表面積から求めた換算粒径(BET径)が0.05
μmを超え1μm以下の粉末を成形し、1450゜C以上
1650゜C以下の範囲で焼結することを特徴とする酸化
インジウム−酸化錫焼結体の製造方法。
1. A method for producing a sintered body of indium oxide-tin oxide, which comprises molding and sintering a powder composed of indium, tin and oxygen.
The converted particle diameter (BET diameter) determined from the T specific surface area is 0.05
A method for producing a sintered body of indium oxide-tin oxide, characterized in that powder having a size of more than 1 μm and less than 1 μm is formed and sintered in a range of 1450 ° C. or more and 1650 ° C. or less.
【請求項2】インジウムと錫と酸素からなる粉末を成形
して焼結させる酸化インジウム−酸化錫焼結体の製造方
法において、酸化インジウム粉末の密度とBET比表面
積から求めた換算粒径(BET径)が0.05μmを超
え1μm以下の酸化インジウム粉末と、酸化錫粉末の密
度とBET比表面積から求めた換算粒径(BET径)が
0.05μmを超え1μm以下の酸化錫粉末とを混合し
て成形し、1450゜C以上1650゜C以下の範囲で焼結
することを特徴とする酸化インジウム−酸化錫焼結体の
製造方法。
2. A method for producing a sintered body of indium oxide-tin oxide, which comprises molding and sintering a powder comprising indium, tin and oxygen, wherein a converted particle diameter (BET) determined from the density of the indium oxide powder and the BET specific surface area is used. Indium oxide powder having a diameter of more than 0.05 μm and not more than 1 μm, and tin oxide powder having a converted particle diameter (BET diameter) of more than 0.05 μm and not more than 1 μm obtained from the density of the tin oxide powder and the BET specific surface area. A method for producing an indium oxide-tin oxide sintered body, characterized in that the indium oxide-tin oxide sintered body is sintered at a temperature of 1450 ° C. or more and 1650 ° C. or less.
【請求項3】インジウムと錫と酸素からなる粉末を成形
して焼結させる酸化インジウム−酸化錫焼結体の製造方
法において、酸化インジウム−酸化錫粉末の密度とBE
T比表面積から求めた換算粒径(BET径)が0.05
μmを超え1μm以下の酸化インジウム−酸化錫粉末
と、酸化錫粉末の密度とBET比表面積から求めた換算
粒径(BET径)が0.05μmを超え1μm以下の酸
化錫粉末とを混合して成形し、1450゜C以上1650
゜C以下の範囲で焼結することを特徴とする酸化インジウ
ム−酸化錫焼結体の製造方法。
3. A method for producing an indium oxide-tin oxide sintered body, which comprises molding and sintering a powder comprising indium, tin and oxygen, wherein the density of the indium oxide-tin oxide powder and the BE
The converted particle diameter (BET diameter) determined from the T specific surface area is 0.05
A mixture of indium oxide-tin oxide powder having a particle size of more than 1 μm and less than 1 μm, and tin oxide powder having a converted particle size (BET diameter) obtained from the density of the tin oxide powder and the BET specific surface area of more than 0.05 μm and not more than 1 μm. Molded, 1450 ° C or more, 1650
A method for producing an indium oxide-tin oxide sintered body, characterized by sintering in a range of ゜ C or less.
【請求項4】インジウムと錫と酸素からなる粉末を成形
して焼結させる酸化インジウム−酸化錫焼結体の製造方
法において、酸化インジウム−酸化錫粉末の密度とBE
T比表面積から求めた換算粒径(BET径)が0.05
μmを超え1μm以下の酸化インジウム−酸化錫粉末
と、酸化インジウム粉末の密度とBET比表面積から求
めた換算粒径(BET径)が0.05μmを超え1μm
以下の酸化インジウム粉末とを混合して成形し、145
0゜C以上1650゜C以下の範囲で焼結することを特徴と
する酸化インジウム−酸化錫焼結体の製造方法。
4. A method for producing an indium oxide-tin oxide sintered body, which comprises molding and sintering a powder comprising indium, tin and oxygen, wherein the density of the indium oxide-tin oxide powder and the BE
The converted particle diameter (BET diameter) determined from the T specific surface area is 0.05
an indium oxide-tin oxide powder having a particle size of more than 1 μm and not more than 1 μm, and a converted particle size (BET diameter) obtained from the density of the indium oxide powder and the BET specific surface area of more than 0.05 μm and 1 μm
The following indium oxide powder was mixed and molded to form 145.
A method for producing a sintered body of indium oxide-tin oxide, characterized by sintering in the range of 0 ° C to 1650 ° C.
【請求項5】インジウム塩と錫塩の混合水溶液をアルカ
リ性水溶液と反応させ、得られた沈澱を焼成して、酸化
インジウム−酸化錫粉末の密度とBET比表面積から求
めた換算粒径(BET径)が0.05μmを超え1μm
以下の粉末を得、該粉末を成形し、1450゜C以上16
50゜C以下の範囲で焼結することを特徴とする酸化イン
ジウム−酸化錫焼結体の製造方法。
5. A mixed aqueous solution of an indium salt and a tin salt is reacted with an alkaline aqueous solution, and the obtained precipitate is calcined to obtain a reduced particle diameter (BET diameter) determined from the density of the indium oxide-tin oxide powder and the BET specific surface area. ) Exceeds 0.05 μm and 1 μm
The following powder was obtained, and the powder was molded.
A method for producing an indium oxide-tin oxide sintered body, comprising sintering at a temperature of 50 ° C. or less.
【請求項6】インジウム塩の水溶液と錫塩の水溶液を、
それぞれアルカリ性水溶液と反応させ、得られたそれぞ
れの沈澱を焼成して、酸化インジウム粉末の密度とBE
T比表面積から求めた換算粒径(BET径)が0.05
μmを超え1μm以下の酸化インジウム粉末と、酸化錫
粉末の密度とBET比表面積から求めた換算粒径(BE
T径)が0.05μmを超え1μm以下の酸化錫粉末と
を得、それぞれの粉末を混合して成形し、1450゜C以
上1650゜C以下の範囲で焼結することを特徴とする酸
化インジウム−酸化錫焼結体の製造方法。
6. An aqueous solution of an indium salt and an aqueous solution of a tin salt,
Each of the precipitates was reacted with an alkaline aqueous solution, and the resulting precipitates were calcined to obtain the density of the indium oxide powder and BE.
The converted particle diameter (BET diameter) determined from the T specific surface area is 0.05
The converted particle diameter (BE) obtained from the density and the BET specific surface area of the indium oxide powder having a particle size exceeding 1 μm and 1 μm or less and the tin oxide powder.
A tin oxide powder having a T diameter of more than 0.05 μm and not more than 1 μm, mixing and molding the respective powders, and sintering in the range of 1450 ° C. or more and 1650 ° C. or less. -A method for producing a tin oxide sintered body.
【請求項7】インジウム塩と錫塩の混合水溶液と錫塩の
水溶液を、それぞれアルカリ性水溶液と反応させ、得ら
れたそれぞれの沈澱を焼成して、酸化インジウム−酸化
錫粉末の密度とBET比表面積から求めた換算粒径(B
ET径)が0.05μmを超え1μm以下の酸化インジ
ウム−酸化錫粉末と、酸化錫粉末の密度とBET比表面
積から求めた換算粒径(BET径)が0.05μmを超
え1μm以下の酸化錫粉末とを得、それぞれの粉末を混
合して成形し、1450゜C以上1650゜C以下の範囲で
焼結することを特徴とする酸化インジウム−酸化錫焼結
体の製造方法。
7. A mixed aqueous solution of an indium salt and a tin salt and an aqueous solution of a tin salt are respectively reacted with an alkaline aqueous solution, and each of the resulting precipitates is calcined to obtain the density of the indium oxide-tin oxide powder and the BET specific surface area. Particle size (B
An indium oxide-tin oxide powder having an ET diameter of more than 0.05 μm and 1 μm or less; and a tin oxide having a converted particle diameter (BET diameter) of more than 0.05 μm and 1 μm or less obtained from the density of the tin oxide powder and the BET specific surface area. A method for producing an indium oxide-tin oxide sintered body, characterized in that powders are obtained, the respective powders are mixed, molded, and sintered in a range of 1450 ° C to 1650 ° C.
【請求項8】インジウム塩と錫塩の混合水溶液とインジ
ウム塩の水溶液を、それぞれアルカリ性水溶液と反応さ
せ、得られたそれぞれの沈澱を焼成して、酸化インジウ
ム−酸化錫粉末の密度とBET比表面積から求めた換算
粒径(BET径)が0.05μmを超え1μm以下の酸
化インジウム−酸化錫粉末と、酸化インジウム粉末の密
度とBET比表面積から求めた換算粒径(BET径)が
0.05μmを超え1μm以下の酸化インジウム粉末と
を得、それぞれの粉末を混合して成形し、1450゜C以
上1650゜C以下の範囲で焼結することを特徴とする酸
化インジウム−酸化錫焼結体の製造方法。
8. A mixed aqueous solution of an indium salt and a tin salt and an aqueous solution of an indium salt are respectively reacted with an alkaline aqueous solution, and each of the resulting precipitates is calcined to obtain the density of the indium oxide-tin oxide powder and the BET specific surface area. Indium oxide-tin oxide powder having a converted particle diameter (BET diameter) of more than 0.05 μm and 1 μm or less, and a converted particle diameter (BET diameter) determined from the density of the indium oxide powder and the BET specific surface area of 0.05 μm And an indium oxide powder having a particle size of not more than 1 μm and obtained by mixing and molding the respective powders and sintering in a range of 1450 ° C. or more and 1650 ° C. or less. Production method.
【請求項9】沈澱を焼成する前に、沈澱と共に生成した
塩類を溶かす水若しくは水溶液又は溶媒で沈澱を洗浄す
る請求項5乃至8記載の製造方法。
9. The process according to claim 5, wherein before the calcination of the precipitate, the precipitate is washed with water, an aqueous solution or a solvent in which salts formed with the precipitate are dissolved.
【請求項10】酸化インジウム−酸化錫粉末の密度とB
ET比表面積から求めた換算粒径(BET径)が0.1
μmを超え0.5μmの粉末である請求項1又は5記載
の製造方法。
10. The density of indium oxide-tin oxide powder and B
The converted particle diameter (BET diameter) obtained from the ET specific surface area is 0.1
The method according to claim 1 or 5, wherein the powder is a powder having a particle size exceeding 0.5 µm.
【請求項11】酸化インジウム粉末の密度とBET比表
面積から求めた換算粒径(BET径)が0.1μmを超
え0.5μm以下の粉末である酸化インジウム粉末と、
酸化錫粉末の密度とBET比表面積から求めた換算粒径
(BET径)が0.1μmを超え0.5μm以下の酸化
錫粉末とを混合する請求項2又は6記載の製造方法。
11. An indium oxide powder having a converted particle diameter (BET diameter) determined from the density of the indium oxide powder and the BET specific surface area of more than 0.1 μm and not more than 0.5 μm;
7. The method according to claim 2, wherein a tin oxide powder having a converted particle diameter (BET diameter) determined from the density of the tin oxide powder and the BET specific surface area of more than 0.1 μm and not more than 0.5 μm is mixed.
【請求項12】酸化インジウム−酸化錫粉末の密度とB
ET比表面積から求めた換算粒径(BET径)が0.1
μmを超え0.5μm以下である酸化インジウム−酸化
錫粉末と、酸化錫粉末の密度とBET比表面積から求め
た換算粒径(BET径)が0.1μmを超え0.5μm以
下の酸化錫粉末とを混合する請求項3又は7記載の製造
方法。
12. The density of indium oxide-tin oxide powder and B
The converted particle diameter (BET diameter) obtained from the ET specific surface area is 0.1
indium oxide-tin oxide powder having a particle diameter of more than 0.5 μm and less than 0.5 μm, and tin oxide powder having a converted particle diameter (BET diameter) calculated from the density of the tin oxide powder and the BET specific surface area of more than 0.1 μm and not more than 0.5 μm The production method according to claim 3 or 7, wherein is mixed.
【請求項13】酸化インジウム−酸化錫粉末の密度とB
ET比表面積から求めた換算粒径(BET径)が0.1
μmを超え0.5μm以下である酸化インジウム−酸化錫
粉末と、酸化インジウム粉末の密度とBET比表面積か
ら求めた換算粒径(BET径)が0.1μmを超え0.
5μm以下の酸化インジウム粉末とを混合する請求項4
又は8記載の製造方法。
13. The density of indium oxide-tin oxide powder and B
The converted particle diameter (BET diameter) obtained from the ET specific surface area is 0.1
The indium oxide-tin oxide powder having a particle size of more than 0.5 μm and less than 0.5 μm, and the converted particle size (BET diameter) obtained from the density and the BET specific surface area of the indium oxide powder is more than 0.1 μm and 0.1 μm.
5. A mixture with an indium oxide powder having a size of 5 μm or less.
Or the manufacturing method of 8.
【請求項14】沈澱の焼成をハロゲン化水素ガス又はハ
ロゲンガスを1体積%以上含有雰囲気下で行う請求項5
乃至9記載の製造方法。
14. The calcination of the precipitate is carried out in an atmosphere containing 1% by volume or more of hydrogen halide gas or halogen gas.
10. The production method according to any one of claims 9 to 9.
【請求項15】焼結を酸素ガス含有雰囲気下で行う請求
項1乃至14記載の製造方法。
15. The method according to claim 1, wherein the sintering is performed in an atmosphere containing oxygen gas.
【請求項16】請求項1乃至15に記載の方法により製
造されることを特徴とする酸化インジウム−酸化錫焼結
体。
16. An indium oxide-tin oxide sintered body produced by the method according to claim 1. Description:
【請求項17】請求項1乃至15に記載の方法により製
造される酸化インジウム−酸化錫焼結体を原料として得
られるITOスパッタターゲット。
17. An ITO sputter target obtained by using an indium oxide-tin oxide sintered body produced by the method according to claim 1 as a raw material.
JP9140002A 1996-05-30 1997-05-29 Method for producing high-density ITO sintered body, high-density ITO sintered body, and ITO sputter target using the same Withdrawn JPH1072253A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9140002A JPH1072253A (en) 1996-05-30 1997-05-29 Method for producing high-density ITO sintered body, high-density ITO sintered body, and ITO sputter target using the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP13658996 1996-05-30
JP8-136589 1996-05-30
JP9140002A JPH1072253A (en) 1996-05-30 1997-05-29 Method for producing high-density ITO sintered body, high-density ITO sintered body, and ITO sputter target using the same

Publications (1)

Publication Number Publication Date
JPH1072253A true JPH1072253A (en) 1998-03-17

Family

ID=26470117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9140002A Withdrawn JPH1072253A (en) 1996-05-30 1997-05-29 Method for producing high-density ITO sintered body, high-density ITO sintered body, and ITO sputter target using the same

Country Status (1)

Country Link
JP (1) JPH1072253A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001261336A (en) * 2000-03-22 2001-09-26 Fuji Titan Kogyo Kk Tin-containing indium oxide fine particle powder and method for producing the same
US6421623B1 (en) * 1998-06-10 2002-07-16 Canon Kabushiki Kaisha Method for inspecting the liquid discharge condition of liquid jet head, and apparatus for inspecting liquid discharge condition
US6500225B2 (en) 1998-12-03 2002-12-31 Sumitomo Chemical Company, Limited Method for producing high density indium-tin-oxide sintered body
KR100474845B1 (en) * 2002-03-22 2005-03-09 삼성코닝 주식회사 Tin oxide powder, manufacturing method thereof, and manufacturing method of high density indium tin oxide target using the same
US7799312B2 (en) 2002-03-22 2010-09-21 Samsung Corning Precision Glass Co., Ltd. Method for manufacturing high-density indium tin oxide target, methods for preparing tin oxide powder and indium oxide powder used therefor
JP2013533391A (en) * 2010-08-06 2013-08-22 シニト(シェンジェン) オプトエレクトリカル アドヴァンスト マテリアルズ カンパニー リミテッド Method for producing high-density indium tin oxide (ITO) sputtering target
JP2015511575A (en) * 2012-03-28 2015-04-20 廈門納諾泰克科技有限公司 Nanotin-containing metal oxide particles and dispersion, production method and application thereof
CN113735565A (en) * 2021-08-30 2021-12-03 深圳市众诚达应用材料科技有限公司 Low-tin-content ITO sputtering target material, preparation method and thin-film solar cell

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6421623B1 (en) * 1998-06-10 2002-07-16 Canon Kabushiki Kaisha Method for inspecting the liquid discharge condition of liquid jet head, and apparatus for inspecting liquid discharge condition
US6500225B2 (en) 1998-12-03 2002-12-31 Sumitomo Chemical Company, Limited Method for producing high density indium-tin-oxide sintered body
JP2001261336A (en) * 2000-03-22 2001-09-26 Fuji Titan Kogyo Kk Tin-containing indium oxide fine particle powder and method for producing the same
KR100474845B1 (en) * 2002-03-22 2005-03-09 삼성코닝 주식회사 Tin oxide powder, manufacturing method thereof, and manufacturing method of high density indium tin oxide target using the same
US7799312B2 (en) 2002-03-22 2010-09-21 Samsung Corning Precision Glass Co., Ltd. Method for manufacturing high-density indium tin oxide target, methods for preparing tin oxide powder and indium oxide powder used therefor
JP2013533391A (en) * 2010-08-06 2013-08-22 シニト(シェンジェン) オプトエレクトリカル アドヴァンスト マテリアルズ カンパニー リミテッド Method for producing high-density indium tin oxide (ITO) sputtering target
JP2015511575A (en) * 2012-03-28 2015-04-20 廈門納諾泰克科技有限公司 Nanotin-containing metal oxide particles and dispersion, production method and application thereof
CN113735565A (en) * 2021-08-30 2021-12-03 深圳市众诚达应用材料科技有限公司 Low-tin-content ITO sputtering target material, preparation method and thin-film solar cell

Similar Documents

Publication Publication Date Title
KR102154947B1 (en) MXene particulate material, manufacturing method of the particulate material, and secondary battery
JP5016993B2 (en) Magnesium oxide particle aggregate and method for producing the same
CN100484879C (en) Manufacturing method of perovskite barium titanate powder
KR100482912B1 (en) Indium oxide-tin oxide powder, preparation method thereof and preparation method of indium oxide-tin oxide sintered body
CN103796956B (en) The manufacture method of barium titanium oxalate and the manufacture method of barium titanate
US4534956A (en) Molten salt synthesis of barium and/or strontium titanate powder
CN1498287A (en) Inert electrode materials in the form of nanocrystalline powders
US7115219B2 (en) Method of producing Indium Tin Oxide powder
US4487755A (en) Preparation of large crystal sized barium and/or strontium titanate powder
JPH1072253A (en) Method for producing high-density ITO sintered body, high-density ITO sintered body, and ITO sputter target using the same
CN101360805A (en) Phosphor raw material and method for producing alloy for phosphor raw material
JP3608316B2 (en) Indium oxide-tin oxide powder and method for producing the same
JPH1179746A (en) Perovskite composite oxide and its production
JP3972380B2 (en) Method for producing α-alumina
JP4253907B2 (en) Method for producing indium oxide-tin oxide powder
CN102432454A (en) Barium titanyl oxalate particles, method for producing same, and method for producing barium titanate
JP2004123523A (en) Method for producing indium oxide-tin oxide powder
JP4701480B2 (en) Tin oxide powder and method for producing tin oxide powder
CN104016316A (en) Method for continuously preparing aluminum nitride powder and equipment thereof
JP2004315268A (en) Conductive oxide sintered body, method for producing the same, and obtained sputtering target
JP2004284952A (en) Indium oxide-tin oxide powder
JPH0668935B2 (en) Oxide sintered body, method for producing the same, and target using the same
JPWO2013051576A1 (en) Conductive mayenite compound sintered body, sputtering target, and method for producing conductive mayenite compound sintered body
WO2019000671A1 (en) Composite ceramic and preparation method therefor
JPH069218A (en) Production of solid solution of barium strontium titanate

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040414

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20061121

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20061128

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20061207