JPH1073604A - Spin polarized scanning microscope and its measuring method - Google Patents
Spin polarized scanning microscope and its measuring methodInfo
- Publication number
- JPH1073604A JPH1073604A JP22858996A JP22858996A JPH1073604A JP H1073604 A JPH1073604 A JP H1073604A JP 22858996 A JP22858996 A JP 22858996A JP 22858996 A JP22858996 A JP 22858996A JP H1073604 A JPH1073604 A JP H1073604A
- Authority
- JP
- Japan
- Prior art keywords
- probe
- sample
- circularly polarized
- polarized light
- movement stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
(57)【要約】
【課題】微動ステージで試料を走査した場合に試料面の
凹凸によらず磁化の程度を検知する。
【解決手段】光照射装置と探針20との間の光路中にシ
ャッタが配置され、コントローラは、(1)シャッタを
開にし円偏光を右円偏光と左円偏光とに交互に切換え、
この円偏光を探針20に照射させた状態で、微動ステー
ジを駆動して探針20を相対的に試料10上で1ライン
往方向へ走査させ、(2)シャッタを閉にした状態で、
微動ステージを駆動して探針20を相対的に同一ライン
上を復方向へ走査させ、(1)及び(2)での走査中に
試料上の各検出位置について、探針と試料との間に流れ
るトンネル電流が設定値になるように微動ステージの試
料面法線方向駆動量を調節したときの該駆動量を検出
し、右円偏光のときに(1)で得た該駆動量と左円偏光
のときに(1)で得た該駆動量との差を、磁化状態量と
して算出する。シャッタを備えずに(2)で直線偏光又
は無偏光を探針に照射させてもよい。
(57) [Summary] [PROBLEMS] To detect the degree of magnetization regardless of unevenness of a sample surface when a sample is scanned by a fine movement stage. A shutter is disposed in an optical path between a light irradiation device and a probe, and a controller opens the shutter and alternately switches circularly polarized light between right circularly polarized light and left circularly polarized light;
With the circularly polarized light applied to the probe 20, the fine movement stage is driven to relatively scan the probe 20 in the forward direction by one line on the sample 10. (2) With the shutter closed,
The fine movement stage is driven to cause the probe 20 to relatively scan on the same line in the backward direction. During each of the scans (1) and (2), the position between the probe and the sample is determined for each detection position on the sample. The amount of drive when the drive amount of the fine movement stage in the normal direction of the sample surface is adjusted such that the tunnel current flowing through the sample becomes the set value is detected. The difference from the drive amount obtained in (1) for circularly polarized light is calculated as the magnetization state amount. The probe may be irradiated with linearly polarized light or non-polarized light without using the shutter in (2).
Description
【0001】[0001]
【発明の属する技術分野】本発明は、スピン偏極走査型
顕微鏡及びその測定方法に関する。The present invention relates to a spin-polarized scanning microscope and a measuring method therefor.
【0002】[0002]
【従来の技術】スピン偏極走査型顕微鏡によれば、原子
オーダーの空間分解能でハードディスクなどの磁気記録
媒体を評価することが可能である。スピン偏極走査型顕
微鏡では、半導体の探針を磁化膜試料に接近して対向配
置し、両者間に電圧を印加しておき、円偏光を探針に入
射させると、励起されたスピン偏極電子が探針内部で生
成され、これがトンネル効果により試料へ注入される。
その量、すなわち探針と試料との間に流れる電流は、試
料に注入された電子の平均的なスピン方向(スピン偏極
方向)と、注入点での試料内電子の平均的なスピン方向
とに依存する。2. Description of the Related Art According to a spin-polarized scanning microscope, it is possible to evaluate a magnetic recording medium such as a hard disk with a spatial resolution of the order of atoms. In a spin-polarized scanning microscope, a semiconductor probe is arranged in close proximity to a magnetized film sample, a voltage is applied between the two, and circularly polarized light is incident on the probe. Electrons are generated inside the probe and are injected into the sample by the tunnel effect.
The amount, ie, the current flowing between the probe and the sample, depends on the average spin direction (spin polarization direction) of the electrons injected into the sample and the average spin direction of the electrons in the sample at the injection point. Depends on.
【0003】励起された電子のスピン偏極方向は入射円
偏光の進行方向又はその逆方向であるので、磁化膜試料
の磁化状態を検知する場合、試料がその面内の方向に磁
化されているときには、探針の軸方向に進行する円偏光
が探針に入射され(特開平6−160501号公報)、
試料がその面の法線方向に磁化されているときには、探
針の軸方向に直角な方向へ進行する円偏光が探針に入射
される(特開昭62−139240号公報)。The direction of spin polarization of excited electrons is the traveling direction of incident circularly polarized light or the opposite direction. Therefore, when detecting the magnetization state of a magnetized film sample, the sample is magnetized in the in-plane direction. Sometimes, circularly polarized light traveling in the axial direction of the probe is incident on the probe (Japanese Patent Application Laid-Open No. 6-160501).
When the sample is magnetized in the normal direction of the surface, circularly polarized light traveling in a direction perpendicular to the axial direction of the probe is incident on the probe (Japanese Patent Application Laid-Open No. Sho 62-139240).
【0004】探針内で励起された電子のスピン偏極方向
は右円偏光と左円偏光とで互いに逆になるので、従来で
は、右円偏光のときに流れる電流と左円偏光のときに流
れる電流との差により試料の磁化状態を検知していた。
また、ピエゾ素子で駆動される微動ステージ上に試料を
搭載し、試料の磁区像を得ていた。[0004] Since the spin polarization directions of electrons excited in the probe are opposite to each other for right circularly polarized light and left circularly polarized light, conventionally, current flowing when right circularly polarized light and current when left circularly polarized light are used. The magnetization state of the sample was detected based on the difference from the flowing current.
Further, a sample is mounted on a fine movement stage driven by a piezo element, and a magnetic domain image of the sample is obtained.
【0005】[0005]
【発明が解決しようとする課題】探針と試料との間に流
れる電流がトンネル効果によるものであるので、両者の
間隔が1〜3オングストローム変化すると、この電流が
約1桁変化する。このため、微動ステージで試料を走査
した場合に、上記電流の差が試料表面の原子オーダーの
凹凸に大きく依存し、上記従来法では磁化の程度が不明
となり、磁化方向のみしか検知することができなかっ
た。Since the current flowing between the probe and the sample is due to the tunnel effect, if the distance between them changes by 1 to 3 angstroms, this current changes by about one digit. For this reason, when the sample is scanned by the fine movement stage, the difference between the currents largely depends on the irregularities of the atomic order on the surface of the sample, and the degree of magnetization is unknown in the conventional method, and only the magnetization direction can be detected. Did not.
【0006】本発明の目的は、このような問題点に鑑
み、微動ステージで試料を走査した場合に試料面の凹凸
によらず磁化の程度を検知することが可能なスピン偏極
走査型顕微鏡及びその測定方法を提供することにある。SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to provide a spin-polarized scanning microscope capable of detecting the degree of magnetization irrespective of unevenness of a sample surface when scanning the sample with a fine movement stage. It is to provide a measuring method.
【0007】[0007]
【課題を解決するための手段及びその作用効果】第1発
明では、円偏光の入射により励起されたスピン偏極電子
が内部で生成される半導体で形成され、試料に接近して
対向配置された探針と、該探針と該試料との間に電圧を
印加し、該探針と該試料との間に流れる電流を検出する
電流検出回路と、該探針に円偏光を照射させる円偏光照
射装置と、該試料に対し該探針を相対的に微動させる微
動ステージと、を有するスピン偏極走査型顕微鏡におい
て、該円偏光照射装置と該探針との間の光路中に配置さ
れ、該円偏光を通過させ又は遮光するシャッタと、制御
手段と、磁化状態検知手段と、を有し、該制御手段は、
(1)該シャッタを閉にした状態で、該微動ステージを
駆動して該探針を相対的に試料上で1ライン走査させ、
(2)該シャッタを開にし該円偏光を該探針に照射させ
た状態で、該微動ステージを駆動して該探針を相対的に
該1ラインと同一ライン上で走査させ、該磁化状態検知
手段は、該(1)及び(2)での走査中に、該微動ステ
ージの試料面法線方向駆動量を調節し、実質的に該駆動
量又は該電流を検出値として読み取り、同一走査点での
検出値に基づいて磁化状態量を算出する。According to the first aspect of the present invention, the spin-polarized electrons excited by the incidence of the circularly polarized light are formed of a semiconductor internally generated, and are arranged in close proximity to the sample. A probe, a current detection circuit that applies a voltage between the probe and the sample, and detects a current flowing between the probe and the sample, and circularly polarized light that irradiates the probe with circularly polarized light. Irradiation device, a fine movement stage to finely move the probe relative to the sample, in a spin-polarized scanning microscope having a circularly polarized light irradiation device and disposed in the optical path between the probe, A shutter that passes or shields the circularly polarized light, a control unit, and a magnetization state detection unit, and the control unit includes:
(1) With the shutter closed, drive the fine movement stage to cause the probe to relatively scan one line on the sample,
(2) In a state where the shutter is opened and the circularly polarized light is applied to the probe, the fine movement stage is driven to relatively scan the probe on the same line as the one line, and the magnetization state is obtained. During the scanning in (1) and (2), the detecting means adjusts the driving amount of the fine movement stage in the normal direction of the sample surface, reads the driving amount or the current as a detection value, and performs the same scanning. The amount of magnetization state is calculated based on the detected value at the point.
【0008】この第1発明によれば、(1)及び(2)
での走査中に、微動ステージの試料面法線方向駆動量が
調節され、実質的に該駆動量又は上記電流が検出値とし
て読み取られ、同一走査点での検出値に基づいて磁化状
態量が算出されるので、微動ステージで試料を走査した
場合に、試料面の凹凸によらず磁化の程度を検知するこ
とが可能となるという効果を奏する。According to the first invention, (1) and (2)
During the scanning in, the drive amount of the fine movement stage in the normal direction to the sample surface is adjusted, and the drive amount or the current is read as a detection value, and the magnetization state amount is determined based on the detection value at the same scanning point. Since it is calculated, when the sample is scanned by the fine movement stage, it is possible to detect the degree of magnetization regardless of the unevenness of the sample surface.
【0009】また、(1)でシャッタを開にして1ライ
ン走査し(2)でシャッタを閉にして同一ラインを走査
しているので、一回の走査中に各検出点でシャッタ開閉
を行う場合よりも、シャッタ開閉時の振動が探針等に伝
達して原子スケールでの磁化状態検知が不正確になるの
を防止することができる。第2発明では、円偏光の入射
により励起されたスピン偏極電子が内部で生成される半
導体で形成され、試料に接近して対向配置された探針
と、該探針と該試料との間に電圧を印加し、該探針と該
試料との間に流れる電流を検出する電流検出回路と、出
力光の偏光状態が可変であり、該出力光を該探針に照射
させる光照射装置と、該試料に対し該探針を相対的に微
動させる微動ステージと、を有するスピン偏極走査型顕
微鏡において、制御手段と、磁化状態検知手段と、を有
し、該制御手段は、(1)該出力光を無偏光又は直線偏
光にさせ、該出力光を該探針に照射させた状態で、該微
動ステージを駆動して該探針を相対的に試料上で1ライ
ン走査させ、(2)該出力光を円偏光にさせ、該出力光
を該探針に照射させた状態で、該微動ステージを駆動し
て該探針を相対的に該1ラインと同一ライン上で走査さ
せ、該磁化状態検知手段は、該(1)及び(2)での走
査中に、該微動ステージの試料面法線方向駆動量を調節
し、実質的に該駆動量又は該電流を検出値として読み取
り、同一走査点での検出値に基づいて磁化状態量を算出
する。Further, since one line is scanned by opening the shutter in (1) and the same line is scanned by closing the shutter in (2), the shutter is opened and closed at each detection point during one scan. As compared with the case, it is possible to prevent the vibration at the time of opening and closing the shutter from being transmitted to the probe or the like, thereby preventing the magnetization state detection on the atomic scale from being inaccurate. According to the second invention, a spin-polarized electron excited by the incidence of circularly polarized light is formed of a semiconductor internally generated, and a probe arranged close to and opposed to the sample, and a probe is disposed between the probe and the sample. A current detection circuit that applies a voltage to the probe and detects a current flowing between the probe and the sample, and a light irradiation device that has a variable polarization state of output light and irradiates the probe with the output light. And a fine movement stage for finely moving the probe with respect to the sample, wherein the control means and the magnetization state detecting means are provided, wherein the control means comprises: While the output light is unpolarized or linearly polarized and the output light is irradiated to the probe, the fine movement stage is driven to relatively scan the probe by one line on the sample, (2 The fine movement stage in a state where the output light is circularly polarized and the output light is irradiated on the probe; When the probe is driven, the probe is relatively scanned on the same line as the one line, and the magnetization state detecting means performs normal scanning on the sample surface of the fine movement stage during the scanning in (1) and (2). The direction drive amount is adjusted, the drive amount or the current is read as a detection value, and the magnetization state amount is calculated based on the detection value at the same scanning point.
【0010】この第2発明によれば上記第1発明と同様
に、(1)及び(2)での走査中に、微動ステージの試
料面法線方向駆動量が調節され、実質的に該駆動量又は
上記電流が検出値として読み取られ、同一走査点での検
出値に基づいて磁化状態量が算出されるので、微動ステ
ージで試料を走査した場合に、試料面の凹凸によらず磁
化の程度を検知することが可能となるという効果を奏す
る。According to the second aspect, similarly to the first aspect, during the scanning in (1) and (2), the driving amount of the fine movement stage in the normal direction of the sample surface is adjusted, and the driving is substantially performed. The amount or the current is read as a detection value, and the magnetization state amount is calculated based on the detection value at the same scanning point. Therefore, when the sample is scanned by the fine movement stage, the degree of magnetization is independent of the unevenness of the sample surface. Is detected.
【0011】また、走査中ではシャッタの開閉を行わず
に探針に光を常時照射しているので、照射オン/オフで
探針が温度変動して熱膨張が変化するのを防止すること
ができ、さらに、シャッタ開閉の振動が探針等に伝達す
るのが防止され、原子スケールでの磁化状態検知がより
正確になるという効果を奏する。第1又は第2の発明の
第1態様では、上記磁化状態検知手段は、上記電流が一
定の設定値になるように上記微動ステージの試料面法線
方向駆動量を調節したときの該駆動量を上記検出値とす
る。Further, since light is constantly radiated to the probe during scanning without opening and closing the shutter, it is possible to prevent the temperature of the probe from fluctuating due to the irradiation on / off and to prevent the thermal expansion from changing. Further, it is possible to prevent the vibration of the opening and closing of the shutter from being transmitted to the probe or the like, thereby providing an effect that the detection of the magnetization state on the atomic scale becomes more accurate. In the first aspect of the first or second aspect of the present invention, the magnetization state detecting means is configured to adjust the drive amount when the drive amount of the fine movement stage in the normal direction of the sample surface is adjusted such that the current becomes a constant set value. Is the detected value.
【0012】第1又は第2の発明の第2態様では、上記
制御手段は上記(1)を実行した後に上記(2)を実行
し、上記磁化状態検知手段は、上記(1)での検出値
を、上記電流が一定の設定値になるように上記微動ステ
ージの試料面法線方向駆動量を調節したときの該駆動量
とし、上記(2)での検出値を、該(1)での走査位置
に対応した該駆動量での上記電流とする。[0012] In the second aspect of the first or second aspect of the present invention, the control means executes the above (2) after executing the above (1), and the magnetization state detecting means executes the detection in the above (1). The value is defined as the drive amount when the drive amount of the fine movement stage in the normal direction of the sample surface is adjusted so that the current becomes a constant set value, and the detection value in the above (2) is obtained in the above (1). And the above-mentioned current at the drive amount corresponding to the scanning position.
【0013】第1又は第2の発明の第3態様では、上記
円偏光は右円偏光又は左円偏光の一方のみであり、上記
磁化状態検知手段は、上記試料上の各検出位置につい
て、上記(2)で得た検出値と上記(1)で得た検出値
との差に対応した量を、上記磁化状態量として算出す
る。In the third aspect of the first or second invention, the circularly polarized light is only one of a right circularly polarized light and a left circularly polarized light, and the magnetization state detecting means performs the above-mentioned detection for each detection position on the sample. An amount corresponding to the difference between the detection value obtained in (2) and the detection value obtained in (1) is calculated as the magnetization state amount.
【0014】この第3態様によれば、磁化状態量がこの
ような差で算出されるので、試料面の凹凸によらず磁化
の程度をより正確に検知することができるという効果を
奏する。第1又は第2の発明の第4態様では、上記制御
手段は、上記(2)の各検出位置において、上記出力光
を右円偏光と左円偏光とに切換えさせ、上記磁化状態検
知手段は、上記試料上の各検出位置について、該出力光
が右円偏光のときに上記(2)で得た検出値と上記出力
光が左円偏光のときに上記(1)で得た検出値との差に
対応した量を、磁化状態量として算出する。According to the third aspect, since the magnetization state amount is calculated from such a difference, there is an effect that the degree of magnetization can be detected more accurately regardless of the unevenness of the sample surface. In the fourth aspect of the first or second invention, the control means switches the output light between right circularly polarized light and left circularly polarized light at each of the detection positions in (2), and the magnetization state detecting means For each detection position on the sample, the detection value obtained in the above (2) when the output light is right circularly polarized light and the detection value obtained in the above (1) when the output light is left circularly polarized light Is calculated as a magnetization state quantity.
【0015】この切換は電気的に行われるので、切換時
に機械的振動は生じない。また、磁化状態量がこのよう
な差に対応した量で算出されるので、試料面の凹凸によ
らず磁化の程度をより正確に検知することができるとい
う効果を奏する。第1又は第2の発明の第5態様では、
上記制御手段は、上記(1)と上記(2)を1回行った
後に、(3)上記探針を相対的に上記1ラインと略直角
かつ試料面と略平行な方向へ駆動させ、該(1)〜
(3)を繰り返し行う。Since this switching is performed electrically, no mechanical vibration occurs during the switching. Further, since the magnetization state amount is calculated by an amount corresponding to such a difference, there is an effect that the degree of magnetization can be more accurately detected regardless of the unevenness of the sample surface. In a fifth aspect of the first or second invention,
The control means, after performing the above (1) and (2) once, (3) driving the probe in a direction substantially perpendicular to the one line and substantially parallel to the sample surface, (1)-
(3) is repeated.
【0016】この第5態様によれば、(1)と(2)で
同一ラインが続けて走査されるので、この期間、微動ス
テージはこのラインに直角な方向の駆動が停止してお
り、全領域を一回走査して(1)の処理を実行した後に
全領域を再度走査して(2)の処理を実行する場合より
も、(1)と(2)での同一測定点の位置ずれを低減す
ることができ、結果として、同一走査点での検出値に基
づいて算出される原子スケール磁化状態量をより正確に
測定することができるという効果を奏する。According to the fifth aspect, since the same line is continuously scanned in (1) and (2), the driving of the fine movement stage in the direction perpendicular to this line is stopped during this period. Compared to the case where the area is scanned once and the processing of (1) is executed, and then the entire area is scanned again and the processing of (2) is executed, the positional deviation of the same measurement point in (1) and (2) is reduced. As a result, there is an effect that the atomic scale magnetization state quantity calculated based on the detection value at the same scanning point can be measured more accurately.
【0017】第1又は第2の発明の第6態様では、上記
円偏光照射装置又は上記光照射装置は、上記試料の表面
に略平行又は略垂直な進行方向の円偏光が上記探針に照
射されるように配置されている。この第6態様によれ
ば、試料面に平行又は垂直に磁化された試料の磁化状態
を検知することができる。In the sixth aspect of the first or second invention, the circularly polarized light irradiating device or the light irradiating device irradiates the probe with circularly polarized light having a traveling direction substantially parallel or substantially perpendicular to the surface of the sample. It is arranged to be. According to the sixth aspect, the magnetization state of the sample magnetized parallel or perpendicular to the sample surface can be detected.
【0018】第3発明に係るスピン偏極走査型顕微鏡の
測定方法では、円偏光の入射により励起されたスピン偏
極電子が内部で生成される半導体で形成され、試料に接
近して対向配置された探針と、該探針と該試料との間に
電圧を印加し、該探針と該試料との間に流れる電流を検
出する電流検出回路と、出力光の偏光状態が可変であ
り、該出力光を該探針に照射させる光照射装置と、該試
料に対し該探針を相対的に微動させる微動ステージと、
を備えたスピン偏極走査型顕微鏡を用い、(1)該出力
光を無偏光又は直線偏光にさせ、該出力光を該探針に照
射させた状態で、該微動ステージを駆動して該探針を相
対的に試料上で1ライン走査させ、(2)該出力光を円
偏光にさせ、該出力光を該探針に照射させた状態で、該
微動ステージを駆動して該探針を相対的に該1ラインと
同一ライン上で走査させ、(3)該(1)及び(2)で
の走査中に、該微動ステージの試料面法線方向駆動量を
調節し、実質的に該駆動量又は該電流を検出値として読
み取り、同一走査点での検出値に基づいて磁化状態量を
算出する。In the measurement method of the spin-polarized scanning microscope according to the third invention, the spin-polarized electrons excited by the incidence of the circularly polarized light are formed of a semiconductor generated inside, and are arranged close to and opposed to the sample. A current detection circuit that applies a voltage between the probe and the sample, detects a current flowing between the probe and the sample, and a polarization state of output light is variable; A light irradiation device that irradiates the probe with the output light, a fine movement stage that relatively finely moves the probe with respect to the sample,
Using a spin-polarized scanning microscope equipped with: (1) driving the fine movement stage in a state where the output light is made unpolarized or linearly polarized and the output light is irradiated on the probe; The needle is relatively scanned by one line on the sample, and (2) the output light is circularly polarized, the output light is irradiated on the probe, and the fine movement stage is driven to drive the probe. Relatively scanning on the same line as the one line, and (3) adjusting the amount of driving of the fine movement stage in the normal direction of the sample surface during the scanning in (1) and (2), thereby substantially The driving amount or the current is read as a detection value, and the magnetization state amount is calculated based on the detection value at the same scanning point.
【0019】[0019]
【発明の実施の形態】以下、図面に基づいて本発明の実
施形態を説明する。試料10は、例えばハードディスク
のような磁気記録媒体に用いられる磁化膜であり、微動
ステージ11を介し粗動ステージ12に搭載されてい
る。微動ステージ11は、例えばピエゾ素子に電圧を印
加してこのピエゾ素子を0.1オングストロームの精度
で伸縮させることにより微動させる構成である。粗動ス
テージ12は、パルスモータで粗動させる構成である。
微動ステージ11及び粗動ステージ12は、出力段にド
ライバを備えたコントローラ13により制御される。Embodiments of the present invention will be described below with reference to the drawings. The sample 10 is a magnetized film used for a magnetic recording medium such as a hard disk, for example, and is mounted on a coarse movement stage 12 via a fine movement stage 11. The fine movement stage 11 has a configuration in which, for example, a voltage is applied to a piezo element, and the piezo element is finely moved by expanding and contracting the piezo element with an accuracy of 0.1 angstroms. The coarse movement stage 12 is configured to coarsely move by a pulse motor.
The fine movement stage 11 and the coarse movement stage 12 are controlled by a controller 13 having a driver at the output stage.
【0020】探針20は、試料10に接近して対向配置
されている。探針20は、入射円偏光で励起されたスピ
ン偏極電子が内部で生成されるものであり、例えばGa
Asのような閃亜鉛構造の化合物半導体を劈開し、尖っ
た角を先端としたものである。探針20は、ホルダ21
に保持されて固定されている。試料10と探針20との
間には、トンネル電流を流すための直流電圧源22の電
圧が印加されている。このトンネル電流は、電流検出部
23で検出され且つ電圧に変換され、次いで増幅回路2
4で増幅されてコントローラ13に供給される。The probe 20 is arranged so as to approach the sample 10 and face it. The probe 20 internally generates spin-polarized electrons excited by incident circularly polarized light.
A compound semiconductor having a zinc blend structure, such as As, is cleaved and the sharp corners are used as the tips. The probe 20 includes a holder 21
It is held and fixed. Between the sample 10 and the probe 20, a voltage of a DC voltage source 22 for flowing a tunnel current is applied. This tunnel current is detected by the current detection unit 23 and converted into a voltage.
The signal is amplified at 4 and supplied to the controller 13.
【0021】レーザ30から射出された直線偏光L1
は、ポッケルスセル31、1/4波長板32及びシャッ
タ33を通って探針20に照射される。直線偏光L1の
好ましい波長は探針20の材料で定まり、例えば探針2
0がp型GaAsの場合には830nmの近赤外線が用
いられる。レーザ30から出た直線偏光L2の偏光面
は、ポッケルスセル31の電極に印加された電圧が低レ
ベル(0V)のときと所定の高レベルのときとで互いに
90゜異なり、前者と後者の直線偏光L2をそれぞれ第
1及び第2の直線偏光と称す。直線偏光L2は、1/4
波長板32を通って円偏光L3となる。円偏光L3は、
例えば、直線偏光L2が第1の直線偏光のとき右円偏光
となり、直線偏光L2が第2の直線偏光のとき左円偏光
となる。円偏光L3の進行方向は、探針20の軸に直角
かつ試料10の表面に平行になっている。The linearly polarized light L1 emitted from the laser 30
Is irradiated on the probe 20 through the Pockels cell 31, the quarter-wave plate 32 and the shutter 33. The preferred wavelength of the linearly polarized light L1 is determined by the material of the probe 20, for example, the probe 2
When 0 is p-type GaAs, near infrared rays of 830 nm are used. The polarization plane of the linearly polarized light L2 emitted from the laser 30 differs by 90 ° between when the voltage applied to the electrodes of the Pockels cell 31 is at a low level (0 V) and when it is at a predetermined high level. The polarized light L2 is called first and second linearly polarized light, respectively. The linearly polarized light L2 is 1 /
The light passes through the wave plate 32 and becomes circularly polarized light L3. The circularly polarized light L3 is
For example, when the linearly polarized light L2 is the first linearly polarized light, it becomes right circularly polarized light, and when the linearly polarized light L2 is the second linearly polarized light, it becomes left circularly polarized light. The traveling direction of the circularly polarized light L3 is perpendicular to the axis of the probe 20 and parallel to the surface of the sample 10.
【0022】シャッタ33は機械的に開閉し、その開閉
はコントローラ13で制御される。コンピュータ40の
入出力部はA/D変換器及びD/A変換器を備えてお
り、コンピュータ40には、増幅回路24の出力及びコ
ントローラ13から微動ステージ11への駆動出力が供
給され、さらに、粗動ステージ12、ポッケルスセル3
1及びシャッタ33に対するコントローラ13の制御情
報が供給され、また、試料10上の測定中心の位置座標
が手操作入力装置41から供給される。コンピュータ4
0は、後述のように入力データを処理して、試料10上
の指定された測定中心付近の表面凹凸画像及び磁化状態
の画像を表示装置42に表示させる。The shutter 33 opens and closes mechanically, and its opening and closing are controlled by the controller 13. The input / output unit of the computer 40 includes an A / D converter and a D / A converter. The output of the amplifier circuit 24 and the drive output from the controller 13 to the fine movement stage 11 are supplied to the computer 40. Coarse movement stage 12, Pockels cell 3
The control information of the controller 13 for the shutter 1 and the shutter 33 is supplied, and the position coordinates of the measurement center on the sample 10 are supplied from the manual input device 41. Computer 4
0 processes the input data as described later, and causes the display device 42 to display a surface unevenness image near the designated measurement center on the sample 10 and an image of the magnetization state.
【0023】次に、図1を参照して、探針20に入射す
る円偏光L3が右円偏光である場合の動作を説明する。
この場合、図1(A)において、探針20内の電子e0
が励起され、トンネル効果によりこれが試料10に注入
される。電子e0のスピン偏極方向は、円偏光L3の進
行方向に一致している。トンネル電流に比例した増幅回
路24の出力電圧が、予め設定された一定値V0になる
ように、コントローラ13で微動ステージ11がZ方向
にサーボ制御される。Z方向への微動ステージ駆動電圧
は、微動ステージ11のZ方向位置に対応している。以
下、増幅回路24の出力電圧がV0に安定したときの微
動ステージ駆動電圧を、微動ステージ11の定電流位置
Zと称す。Next, the operation when the circularly polarized light L3 incident on the probe 20 is right circularly polarized light will be described with reference to FIG.
In this case, as shown in FIG.
Is excited and injected into the sample 10 by the tunnel effect. The spin polarization direction of the electron e0 matches the traveling direction of the circularly polarized light L3. The controller 13 servo-controls the fine movement stage 11 in the Z direction so that the output voltage of the amplifier circuit 24 proportional to the tunnel current becomes a preset constant value V0. The fine movement stage drive voltage in the Z direction corresponds to the Z direction position of fine movement stage 11. Hereinafter, the fine movement stage drive voltage when the output voltage of the amplifier circuit 24 is stabilized at V0 is referred to as a constant current position Z of the fine movement stage 11.
【0024】トンネル電流は、そのスピン偏極方向が、
探針20に対応した試料10上の点(測定点)に存在す
る電子e1のスピン偏極方向と一致していると、選択則
により試料10に入る余地が少なくなり、円偏光L3を
探針20に照射しない場合よりもトンネル電流が少なく
なる。トンネル電流のスピン偏極方向が、試料10上の
測定点に存在する電子e2のスピン偏極方向と逆の場合
には、円偏光L3を探針20に照射しない場合よりもト
ンネル電流が多くなる。The tunnel current has a spin polarization direction:
When the spin direction of the electron e1 existing at a point (measurement point) on the sample 10 corresponding to the probe 20 coincides with the spin polarization direction of the electron e1, there is less room to enter the sample 10 by the selection rule, and the circularly polarized light L3 is probed. The tunnel current is smaller than in the case where the light is not irradiated on 20. When the spin polarization direction of the tunnel current is opposite to the spin polarization direction of the electron e2 present at the measurement point on the sample 10, the tunnel current becomes larger than when the probe 20 is not irradiated with the circularly polarized light L3. .
【0025】円偏光L3を探針20に照射しない場合、
微動ステージ11の定電流位置Zは図1(B)中のZN
となる。これに対し、右円偏光を探針20に照射した場
合には、試料10内のスピンが図1(A)に示すように
偏光しているとき、微動ステージ11の定電流位置Zは
図1(B)中のZRのようになる。図2は、探針20に
入射する円偏光L3が左円偏光である場合の動作を、図
1と対応して示す。この場合の微動ステージ11の定電
流位置Zを、図2(B)中にZLとして示す。When the probe 20 is not irradiated with the circularly polarized light L3,
The constant current position Z of fine movement stage 11 is ZN in FIG.
Becomes On the other hand, when the probe 20 is irradiated with right-handed circularly polarized light, when the spin in the sample 10 is polarized as shown in FIG. It becomes like ZR in (B). FIG. 2 shows the operation when the circularly polarized light L3 incident on the probe 20 is the left circularly polarized light, corresponding to FIG. The constant current position Z of fine movement stage 11 in this case is shown as ZL in FIG.
【0026】次に、図3を参照して、試料10に対する
探針20の相対的な走査と、走査中の測定シーケンスと
を説明する。微動ステージ11の試料面内方向駆動量を
0にした状態で、設定された測定中心点Pが探針20の
真下に来るように、粗動ステージ12を駆動する。次
に、測定点が図3(A)に示す線上を走査するように、
微動ステージ11をステップ駆動する。Next, referring to FIG. 3, the relative scanning of the probe 20 with respect to the sample 10 and the measurement sequence during the scanning will be described. The coarse movement stage 12 is driven such that the set measurement center point P is directly below the probe 20 with the fine movement stage 11 in-plane direction drive amount set to 0. Next, as the measurement point scans on the line shown in FIG.
The fine movement stage 11 is step-driven.
【0027】すなわち、測定点をまず走査ライン51上
の開始点Aにする。シャッタ33を開にし、この状態で
図3(B)に示す処理を行う。 (60)コントローラ13は、ポッケルスセル31に印
加する電圧を上記低レベルにして、円偏光L3を右円偏
光にする。 (61)コントローラ13は、増幅回路24の出力電圧
が設定値V0となるように、微動ステージ11のZ方向
駆動をサーボ制御する。コンピュータ40は、コントロ
ーラ13から測定点の座標(X,Y)を受け取り、ま
た、増幅回路24の出力電圧がV0に安定した状態で、
微動ステージ11の駆動電圧を、定電流位置ZRとして
測定する。That is, the measurement point is first set to the start point A on the scan line 51. The shutter 33 is opened, and the process shown in FIG. 3B is performed in this state. (60) The controller 13 sets the voltage applied to the Pockels cell 31 to the low level described above to change the circularly polarized light L3 to right circularly polarized light. (61) The controller 13 servo-controls the Z-direction drive of the fine movement stage 11 so that the output voltage of the amplifier circuit 24 becomes the set value V0. The computer 40 receives the coordinates (X, Y) of the measurement point from the controller 13, and in a state where the output voltage of the amplifier circuit 24 is stabilized at V0,
The drive voltage of fine movement stage 11 is measured as constant current position ZR.
【0028】(62)コントローラ13は、ポッケルス
セル31に印加する電圧を上記高レベルにして、円偏光
L3を左円偏光にする。 (63)コントローラ13は、増幅回路24の出力電圧
が設定値V0となるように、微動ステージ11のZ方向
駆動をサーボ制御する。コンピュータ40は、増幅回路
24の出力電圧がV0に安定した状態で、微動ステージ
11の駆動電圧を、定電流位置ZLとして測定する。(62) The controller 13 sets the voltage applied to the Pockels cell 31 to the high level described above to change the circularly polarized light L3 into left circularly polarized light. (63) The controller 13 servo-controls the Z-direction drive of the fine movement stage 11 so that the output voltage of the amplifier circuit 24 becomes the set value V0. The computer 40 measures the drive voltage of the fine movement stage 11 as the constant current position ZL with the output voltage of the amplifier circuit 24 stabilized at V0.
【0029】(64)コントローラ13は、微動ステー
ジ11を駆動して、測定点をX方向に刻みΔXだけ移動
させる。図1中のX軸は微動ステージ11に固定されて
いる。以上のステップ61〜64の処理を、走査ライン
51に沿って点Bまで繰り返す。(64) The controller 13 drives the fine movement stage 11 to move the measuring point in the X direction by ΔX. The X axis in FIG. 1 is fixed to fine movement stage 11. The above steps 61 to 64 are repeated along the scanning line 51 up to the point B.
【0030】次に、シャッタ33を閉にして図3(C)
に示す処理を行う。 (70)コントローラ13は、増幅回路24の出力電圧
が設定値V0となるように、微動ステージ11のZ方向
駆動をサーボ制御する。コンピュータ40は、コントロ
ーラ13から測定点の座標(X,Y)を受け取り、ま
た、増幅回路24の出力電圧がV0に安定した状態で、
微動ステージ11の駆動電圧を、定電流位置ZNとして
測定する。Next, the shutter 33 is closed, and FIG.
Is performed. (70) The controller 13 servo-controls the Z-direction drive of the fine movement stage 11 so that the output voltage of the amplifier circuit 24 becomes the set value V0. The computer 40 receives the coordinates (X, Y) of the measurement point from the controller 13, and in a state where the output voltage of the amplifier circuit 24 is stabilized at V0,
The drive voltage of fine movement stage 11 is measured as constant current position ZN.
【0031】(71)コントローラ13は、微動ステー
ジ11を駆動して、測定点をX方向に刻み−ΔXだけ移
動させる。以上のステップ71及び72の処理が、走査
ライン51に沿って、点Bから点Aまで繰り返される。
このように、同一走査ラインの往路でシャッタ33を開
にし復路でシャッタ33を閉にしているので、往路のみ
でΔX移動する毎にシャッタ33を開閉する場合より
も、シャッタ開閉時の振動が探針等に伝達して原子スケ
ールでの磁化状態検知が不正確になるのを防止すること
ができる。(71) The controller 13 drives the fine movement stage 11 to move the measurement point in the X direction by -ΔX. The processing of the above steps 71 and 72 is repeated from point B to point A along the scanning line 51.
As described above, since the shutter 33 is opened on the outward path of the same scanning line and the shutter 33 is closed on the return path, the vibration at the time of opening and closing the shutter can be detected more than when the shutter 33 is opened and closed every time ΔX is moved only on the outward path. It is possible to prevent the magnetization state detection on the atomic scale from being inaccurate by being transmitted to a needle or the like.
【0032】また、一走査ライン毎にシャッタ33を開
閉するので、Y方向駆動は往路及び復路で停止してお
り、図3(A)のシャッタ33を開にして全領域を一回
走査した後にシャッタ33を閉にして全領域を再度走査
する場合よりも、シャッタ開のときと閉のときの同一測
定点の位置ずれを低減することができ、結果として、上
記のように差で算出される原子スケールでの磁化状態量
をより正確に測定することができる。Further, since the shutter 33 is opened and closed for each scanning line, the Y-direction driving is stopped on the forward path and the backward path, and after the shutter 33 shown in FIG. Compared with the case where the shutter 33 is closed and the entire area is scanned again, the displacement of the same measurement point when the shutter is opened and when the shutter is closed can be reduced, and as a result, the difference is calculated as described above. The amount of magnetization on the atomic scale can be measured more accurately.
【0033】次に、コントローラ13は測定点をΔYだ
け移動させる。次に、走査ライン52上について以上の
処理が行われる。以下、上記同様の処理が繰り返し行わ
れて、例えば512×512画素の走査が行われる。コ
ンピュータ40は、走査領域内での定電流位置ZN
(X,Y)を凹凸画像として表示装置42に表示させ
る。また、これと同時に、この領域内についてZR
(X,Y)−ZL(X,Y)に比例した値を磁化状態量
として表示装置42に画像表示させる。Next, the controller 13 moves the measuring point by ΔY. Next, the above processing is performed on the scanning line 52. Hereinafter, the same processing as described above is repeatedly performed, for example, scanning of 512 × 512 pixels is performed. The computer 40 controls the constant current position ZN in the scanning area.
(X, Y) is displayed on the display device 42 as an uneven image. At the same time, ZR
A value proportional to (X, Y) -ZL (X, Y) is displayed on the display device 42 as a magnetization state quantity.
【0034】磁化状態量がこのような差で算出されるの
で、試料面の凹凸によらない磁化状態(磁区構造)を検
知することが可能となり、磁化の程度を検知することが
できる。なお、本発明には外にも種々の変形例が含まれ
る。例えば、上記実施形態では試料10の磁化方向が膜
面内の方向である場合を説明したが、本発明はこの磁化
方向が膜面の法線方向である場合にも適用可能であり、
この場合、円偏光L3を探針20の軸に沿って入射させ
る。入射方向は、探針20の上方から下方へ又はその逆
のいずれであってもよい。Since the magnetization state amount is calculated from such a difference, it is possible to detect a magnetization state (magnetic domain structure) independent of the unevenness of the sample surface, and it is possible to detect the degree of magnetization. The present invention also includes various modified examples. For example, in the above embodiment, the case where the magnetization direction of the sample 10 is in the direction of the film surface has been described. However, the present invention is also applicable to the case where the magnetization direction is the normal direction of the film surface.
In this case, the circularly polarized light L3 is incident along the axis of the probe 20. The incident direction may be from above to below the probe 20 or vice versa.
【0035】また、図3(B)のステップ60及び61
を省略し、ZL(X,Y)−ZN(X,Y)に比例した
値を磁化状態量として表示装置42に画像表示させる構
成であってもよい。同様に、図3(B)のステップ62
及び63を省略し、ZR(X,Y)−ZN(X,Y)に
比例した値を磁化状態量として表示装置42に画像表示
させる構成であってもよい。このようにしても、試料面
の凹凸によらない磁化状態を検知することが可能とな
り、磁化の程度を検知することができる。Steps 60 and 61 in FIG.
May be omitted, and a value proportional to ZL (X, Y) -ZN (X, Y) may be displayed as an image on the display device 42 as a magnetization state quantity. Similarly, step 62 in FIG.
And 63 may be omitted, and a value proportional to ZR (X, Y) -ZN (X, Y) may be displayed on the display device 42 as a magnetization state quantity. Even in this case, it is possible to detect the magnetization state without depending on the unevenness of the sample surface, and it is possible to detect the degree of magnetization.
【0036】また、各走査ラインにつき、(a)シャッ
タ33を閉にした状態で図3(C)の処理を先に行って
微動ステージ11の定電流位置ZN(X,Y)を測定
し、これをメモリ等の記憶手段に記憶しておき、(b)
次に、シャッタ33を開にした状態で同一走査ラインを
折り返して走査するときに、微動ステージ11を定電流
位置ZN(X,Y)にし、右円偏光のときの増幅回路2
4の出力電圧ZNR及び左円偏光のときの増幅回路24
の出力電圧ZNLを読み取り、(c)ZNL(X,Y)
−ZNR(X,Y)に比例した値を磁化状態量として検
知する構成であってもよい。このようにしても、試料面
の凹凸によらない磁化状態を検知することが可能とな
り、磁化の程度を検知することができる。For each scanning line, (a) the process of FIG. 3C is performed first with the shutter 33 closed to measure the constant current position ZN (X, Y) of the fine movement stage 11. This is stored in a storage means such as a memory, and (b)
Next, when the same scanning line is turned back and scanned with the shutter 33 opened, the fine movement stage 11 is set to the constant current position ZN (X, Y), and the amplification circuit 2 for right circularly polarized light is set.
Amplifying circuit 24 for output voltage ZNR of 4 and left-handed circularly polarized light
(C) ZNL (X, Y)
A configuration in which a value proportional to −ZNR (X, Y) is detected as the magnetization state amount may be employed. Even in this case, it is possible to detect the magnetization state without depending on the unevenness of the sample surface, and it is possible to detect the degree of magnetization.
【0037】この場合の変形例として、ステップ(b)
で出力電圧ZNR又はZNLの一方のみ読み取り、ステ
ップ(c)でZNR(X,Y)−ZN(X,Y)又はZ
NL(X,Y)−ZN(X,Y)に比例した値を磁化状
態量として検知する構成であってもよい。このようにし
ても、試料面の凹凸によらない磁化状態を検知すること
が可能となり、磁化の程度を検知することができる。As a modification of this case, step (b)
Read only one of the output voltages ZNR or ZNL, and in step (c), ZNR (X, Y) -ZN (X, Y) or Z
A configuration in which a value proportional to NL (X, Y) -ZN (X, Y) is detected as the magnetization state amount may be employed. Even in this case, it is possible to detect the magnetization state without depending on the unevenness of the sample surface, and it is possible to detect the degree of magnetization.
【0038】また、シャッタ33を備えずに、上記ステ
ップ(a)において、光L3が直線偏光になるようにコ
ントローラ13でポッケルスセル31に電圧を印加する
ように構成してもよい。直線偏光は右円偏光と左円偏光
を重ね合わせたものと考えることができるので、これを
探針20に照射しても探針20内でスピン偏極が生ぜ
ず、しかも、走査中にシャッタの開閉を行わずに探針2
0に光を常時照射しているので、照射オン/オフで探針
20が温度変動して熱膨張が変化するのを防止すること
ができ、さらに、シャッタ開閉の振動が探針等に伝達す
るのが防止され、原子スケールでの磁化状態検知がより
正確になるという効果を奏する。ステップ(a)におい
て、光L3を直線偏光にする替わりに無偏光にしてもよ
い。Further, without providing the shutter 33, the controller 13 may apply a voltage to the Pockels cell 31 so that the light L3 becomes linearly polarized light in the step (a). Since the linearly polarized light can be considered to be a superposition of right circularly polarized light and left circularly polarized light, even if the linearly polarized light is irradiated on the probe 20, no spin polarization occurs in the probe 20, and the shutter during scanning is not affected. Probe 2 without opening and closing
Since the light is always radiated to 0, it is possible to prevent the temperature of the probe 20 from fluctuating due to the irradiation on / off and to prevent the thermal expansion from changing. Further, the vibration of opening and closing the shutter is transmitted to the probe and the like. This is effective in that the detection of the magnetization state on the atomic scale becomes more accurate. In step (a), the light L3 may be unpolarized instead of being linearly polarized.
【0039】さらに、探針20を試料10に対し相対的
に走査できればよく、上記実施形態と逆に、試料10を
固定しホルダ21を駆動する構成であってもよい。Furthermore, it is sufficient that the probe 20 can be scanned relative to the sample 10, and a configuration in which the sample 10 is fixed and the holder 21 is driven may be adopted, contrary to the above embodiment.
【図1】右円偏光を探針に照射した場合の動作説明図で
ある。FIG. 1 is an operation explanatory diagram when right circularly polarized light is applied to a probe.
【図2】左円偏光を探針に照射した場合の動作説明図で
ある。FIG. 2 is an explanatory diagram of an operation in a case where a probe is irradiated with left circularly polarized light.
【図3】微動ステージ走査と、走査中の測定シーケンス
とを示す図である。FIG. 3 is a diagram showing fine movement stage scanning and a measurement sequence during scanning.
【図4】本発明の一実施形態に係るスピン偏極走査型顕
微鏡の概略構成図である。FIG. 4 is a schematic configuration diagram of a spin-polarized scanning microscope according to one embodiment of the present invention.
10 試料 11 微動ステージ 12 粗動ステージ 13 コントローラ 20 探針 21 ホルダ 22 直流電圧源 23 電流検出部 24 増幅回路 30 レーザ 31 ポッケルスセル 32 1/4波長板 33 シャッタ 40 コンピュータ REFERENCE SIGNS LIST 10 sample 11 fine movement stage 12 coarse movement stage 13 controller 20 probe 21 holder 22 DC voltage source 23 current detector 24 amplifier circuit 30 laser 31 Pockels cell 32 1/4 wavelength plate 33 shutter 40 computer
Claims (9)
極電子が内部で生成される半導体で形成され、試料に接
近して対向配置された探針と、 該探針と該試料との間に電圧を印加し、該探針と該試料
との間に流れる電流を検出する電流検出回路と、 該探針に円偏光の出力光を照射させる円偏光照射装置
と、 該試料に対し該探針を相対的に微動させる微動ステージ
と、 を有するスピン偏極走査型顕微鏡において、 該円偏光照射装置と該探針との間の光路中に配置され、
該円偏光を通過させ又は遮光するシャッタと、 制御手段と、 磁化状態検知手段と、 を有し、該制御手段は、 (1)該シャッタを閉にした状態で、該微動ステージを
駆動して該探針を相対的に試料上で1ライン走査させ、 (2)該シャッタを開にし該円偏光を該探針に照射させ
た状態で、該微動ステージを駆動して該探針を相対的に
該1ラインと同一ライン上で走査させ、 該磁化状態検知手段は、該(1)及び(2)での走査中
に、該微動ステージの試料面法線方向駆動量を調節し、
実質的に該駆動量又は該電流を検出値として読み取り、
同一走査点での検出値に基づいて磁化状態量を算出す
る、 ことを特徴とするスピン偏極走査型顕微鏡。1. A probe formed of a semiconductor in which spin-polarized electrons excited by the incidence of circularly polarized light are formed inside, and are arranged in close proximity to a sample and between the probe and the sample. A current detection circuit for applying a voltage to the probe to detect a current flowing between the probe and the sample; a circularly polarized light irradiating device for irradiating the probe with circularly polarized output light; A fine-movement stage for relatively finely moving the needle; and a spin-polarized scanning microscope having: a micro-movement stage that is disposed in an optical path between the circularly polarized light irradiation device and the probe;
A shutter for passing or blocking the circularly polarized light; a control unit; and a magnetization state detecting unit. The control unit includes: (1) driving the fine movement stage with the shutter closed; The probe is caused to relatively scan one line on the sample, and (2) the shutter is opened to irradiate the probe with the circularly polarized light, and the fine movement stage is driven to relatively move the probe. The scanning is performed on the same line as the one line, and the magnetization state detecting means adjusts the driving amount of the fine movement stage in the normal direction of the sample surface during the scanning in (1) and (2),
Substantially reading the drive amount or the current as a detection value,
A spin-polarized scanning microscope, wherein a magnetization state quantity is calculated based on a detection value at the same scanning point.
極電子が内部で生成される半導体で形成され、試料に接
近して対向配置された探針と、 該探針と該試料との間に電圧を印加し、該探針と該試料
との間に流れる電流を検出する電流検出回路と、 出力光の偏光状態が可変であり、該出力光を該探針に照
射させる光照射装置と、 該試料に対し該探針を相対的に微動させる微動ステージ
と、 を有するスピン偏極走査型顕微鏡において、 制御手段と、 磁化状態検知手段と、 を有し、該制御手段は、 (1)該出力光を無偏光又は直線偏光にさせ、該出力光
を該探針に照射させた状態で、該微動ステージを駆動し
て該探針を相対的に試料上で1ライン走査させ、 (2)該出力光を円偏光にさせ、該出力光を該探針に照
射させた状態で、該微動ステージを駆動して該探針を相
対的に該1ラインと同一ライン上で走査させ、 該磁化状態検知手段は、該(1)及び(2)での走査中
に、該微動ステージの試料面法線方向駆動量を調節し、
実質的に該駆動量又は該電流を検出値として読み取り、
同一走査点での検出値に基づいて磁化状態量を算出す
る、 ことを特徴とするスピン偏極走査型顕微鏡。2. A probe formed of a semiconductor in which spin-polarized electrons excited by the incidence of circularly polarized light are formed inside, and are arranged in close proximity to a sample, and between the probe and the sample. A current detection circuit that applies a voltage to the probe and detects a current flowing between the probe and the sample; a light irradiation device that has a variable polarization state of output light and irradiates the probe with the output light. And a fine movement stage for finely moving the probe with respect to the sample. A spin-polarized scanning microscope comprising: a control means; and a magnetization state detecting means, wherein the control means comprises: (1) While the output light is unpolarized or linearly polarized and the output light is irradiated on the probe, the fine movement stage is driven to relatively scan the probe by one line on the sample, (2) ) The output light is made to be circularly polarized light, and the output light is irradiated to the probe. And driving the probe to cause the probe to relatively scan on the same line as the one line. The magnetization state detecting means performs the scanning of the fine movement stage during the scanning in (1) and (2). Adjust the surface normal direction drive amount,
Substantially reading the drive amount or the current as a detection value,
A spin-polarized scanning microscope, wherein a magnetization state quantity is calculated based on a detection value at the same scanning point.
定の設定値になるように上記微動ステージの試料面法線
方向駆動量を調節したときの該駆動量を上記検出値とす
る、 ことを特徴とする請求項1又は2記載のスピン偏極走査
型顕微鏡。3. The method according to claim 1, wherein the magnetizing state detecting means adjusts a driving amount of the fine movement stage in a normal direction of the sample surface so that the current has a constant set value, and uses the driving amount as the detection value. The spin-polarized scanning microscope according to claim 1 or 2, wherein:
に上記(2)を実行し、 上記磁化状態検知手段は、上記(1)での検出値を、上
記電流が一定の設定値になるように上記微動ステージの
試料面法線方向駆動量を調節したときの該駆動量とし、
上記(2)での検出値を、該(1)での走査位置に対応
した該駆動量での上記電流とする、 ことを特徴とする請求項1又は2記載のスピン偏極走査
型顕微鏡。4. The control means executes the above (2) after the execution of the above (1), and the magnetization state detecting means changes the detected value in the above (1) to a set value in which the current is constant. The drive amount when adjusting the drive amount in the normal direction of the sample surface of the fine movement stage so that
3. The spin-polarized scanning microscope according to claim 1, wherein the detected value in (2) is the current at the driving amount corresponding to the scanning position in (1).
光又は左円偏光の一方のみであり、 上記磁化状態検知手段は、上記試料上の各検出位置につ
いて、上記(2)で得た検出値と上記(1)で得た検出
値との差に対応した量を、上記磁化状態量として算出す
る、 ことを特徴とする請求項3又は4記載のスピン偏極走査
型顕微鏡。5. The method according to claim 2, wherein the circularly polarized light is only one of right-handed circularly polarized light and left-handed circularly polarized light, and the magnetization state detecting means obtains each of the detection positions on the sample in the above (2). The spin-polarized scanning microscope according to claim 3 or 4, wherein an amount corresponding to a difference between the detected value and the detected value obtained in (1) is calculated as the magnetization state amount.
置において、上記出力光を右円偏光と左円偏光とに切換
えさせ、 上記磁化状態検知手段は、上記試料上の各検出位置につ
いて、該出力光が右円偏光のときに上記(2)で得た検
出値と上記出力光が左円偏光のときに上記(1)で得た
検出値との差に対応した量を、磁化状態量として算出す
る、 ことを特徴とする請求項3又は4記載のスピン偏極走査
型顕微鏡。6. The control means switches the output light between right-handed circularly polarized light and left-handed circularly polarized light at each of the detection positions in (2), and wherein the magnetization state detecting means controls each of the detection positions on the sample. And the amount corresponding to the difference between the detection value obtained in (2) above when the output light is right circularly polarized light and the detection value obtained in above (1) when the output light is left circularly polarized light, The spin-polarized scanning microscope according to claim 3, wherein the calculated value is calculated as a magnetization state quantity.
料面と略平行な方向へ駆動させ、 該(1)〜(3)を繰り返し行うことを特徴とする請求
項1乃至6のいずれか1つに記載のスピン偏極走査型顕
微鏡。7. The control means, after performing the above (1) and the above (2) once, (3) a direction in which the probe is relatively perpendicular to the one line and substantially parallel to the sample surface. The spin-polarized scanning microscope according to any one of claims 1 to 6, wherein (1) to (3) are repeatedly performed.
は、上記試料の表面に略平行又は略垂直な進行方向の円
偏光が上記探針に照射されるように配置されている、 ことを特徴とする請求項1乃至7のいずれか1つに記載
のスピン偏極走査型顕微鏡。8. The circularly polarized light irradiating device or the light irradiating device is arranged such that circularly polarized light having a traveling direction substantially parallel or substantially perpendicular to the surface of the sample is irradiated on the probe. The spin-polarized scanning microscope according to any one of claims 1 to 7, wherein:
極電子が内部で生成される半導体で形成され、試料に接
近して対向配置された探針と、 該探針と該試料との間に電圧を印加し、該探針と該試料
との間に流れる電流を検出する電流検出回路と、 出力光の偏光状態が可変であり、該出力光を該探針に照
射させる光照射装置と、 該試料に対し該探針を相対的に微動させる微動ステージ
と、 を備えたスピン偏極走査型顕微鏡を用い、 (1)該出力光を無偏光又は直線偏光にさせ、該出力光
を該探針に照射させた状態で、該微動ステージを駆動し
て該探針を相対的に試料上で1ライン走査させ、 (2)該出力光を円偏光にさせ、該出力光を該探針に照
射させた状態で、該微動ステージを駆動して該探針を相
対的に該1ラインと同一ライン上で走査させ、 (3)該(1)及び(2)での走査中に、該微動ステー
ジの試料面法線方向駆動量を調節し、実質的に該駆動量
又は該電流を検出値として読み取り、同一走査点での検
出値に基づいて磁化状態量を算出する、 ことを特徴とするスピン偏極走査型顕微鏡の測定方法。9. A probe formed of a semiconductor in which spin-polarized electrons excited by the incidence of circularly polarized light are formed, and are disposed in close proximity to a sample, and between the probe and the sample. A current detection circuit that applies a voltage to the probe and detects a current flowing between the probe and the sample; a light irradiation device that has a variable polarization state of output light and irradiates the probe with the output light. And a fine movement stage for finely moving the probe relative to the sample, using a spin-polarized scanning microscope comprising: (1) making the output light non-polarized or linearly polarized; In a state where the probe is irradiated, the fine movement stage is driven to relatively scan the probe by one line on the sample. (2) The output light is circularly polarized, and the output light is converted to the probe. The fine movement stage is driven and the probe is relatively moved on the same line as the one line in a state where the laser beam is irradiated. (3) During the scanning in (1) and (2), the amount of drive of the fine movement stage in the normal direction to the sample surface is adjusted, and the amount of drive or the current is substantially read as a detection value; A method for measuring a spin-polarized scanning microscope, comprising calculating a magnetization state amount based on a detection value at the same scanning point.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22858996A JPH1073604A (en) | 1996-08-29 | 1996-08-29 | Spin polarized scanning microscope and its measuring method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22858996A JPH1073604A (en) | 1996-08-29 | 1996-08-29 | Spin polarized scanning microscope and its measuring method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1073604A true JPH1073604A (en) | 1998-03-17 |
Family
ID=16878737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22858996A Withdrawn JPH1073604A (en) | 1996-08-29 | 1996-08-29 | Spin polarized scanning microscope and its measuring method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1073604A (en) |
-
1996
- 1996-08-29 JP JP22858996A patent/JPH1073604A/en not_active Withdrawn
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2966189B2 (en) | Scanning probe microscope | |
| KR100366701B1 (en) | Probe of scanning probe microscope having a field effect transistor channel and Fabrication method thereof | |
| EP0497288B1 (en) | Probe scanning system | |
| US8289818B2 (en) | Magneto-optic write-head characterization using the recording medium as a transducer layer | |
| US5155715A (en) | Reproducing apparatus | |
| US20140133284A1 (en) | Magneto-optical detection of a field produced by a sub-resolution magnetic structure | |
| US12535463B2 (en) | Linear array scanning device and control method | |
| US5130554A (en) | Two-dimensional scanning device for detecting position between two relatively movable objects | |
| JPH1073604A (en) | Spin polarized scanning microscope and its measuring method | |
| JP3859588B2 (en) | Scanning probe microscope and measuring method thereof | |
| JP3084468B2 (en) | Scanning probe microscope | |
| JP2000314697A (en) | Spin-polarized scanning tunneling microscope | |
| JPH10206434A (en) | Information detection method and spin-polarized scanning tunneling microscope as device therefor | |
| JP3638764B2 (en) | Spin-polarized scanning microscope and tilt angle adjusting method thereof | |
| JP3630838B2 (en) | Scanning tunneling microscope and magnetization detection method | |
| JP3103217B2 (en) | Scanning probe microscope and method for observing a sample using the same | |
| JP2821511B2 (en) | Tilt adjustment method | |
| JP2006030015A (en) | Magnetic information detector | |
| JPH06281448A (en) | Optical displacement sensor | |
| JP2794191B2 (en) | Displacement amount detecting device and positioning device using the same | |
| JPH05334737A (en) | Tracking method and information processor using the same | |
| JPH02311709A (en) | Encoder | |
| JPH0735827A (en) | Electrooptical measuring apparatus | |
| JPH01259210A (en) | Surface shape measuring instrument | |
| JPH07191046A (en) | Optical fiber probe recording and observation device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20031104 |