JPH1084206A - Support structure for dielectric resonator - Google Patents
Support structure for dielectric resonatorInfo
- Publication number
- JPH1084206A JPH1084206A JP23664296A JP23664296A JPH1084206A JP H1084206 A JPH1084206 A JP H1084206A JP 23664296 A JP23664296 A JP 23664296A JP 23664296 A JP23664296 A JP 23664296A JP H1084206 A JPH1084206 A JP H1084206A
- Authority
- JP
- Japan
- Prior art keywords
- thermal expansion
- dielectric resonator
- support
- coefficient
- stand
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims abstract description 7
- 229910001369 Brass Inorganic materials 0.000 claims abstract description 4
- 239000010951 brass Substances 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Landscapes
- Control Of Motors That Do Not Use Commutators (AREA)
- Non-Reversible Transmitting Devices (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は誘電体共振器の支持
構造に関し、特に熱の影響を受けにくい誘電体共振器の
支持構造に関する。The present invention relates to a support structure for a dielectric resonator, and more particularly to a support structure for a dielectric resonator that is not easily affected by heat.
【0002】[0002]
【従来の技術】従来、この種の誘電体共振器の支持構造
は、誘電体共振器の共振特性を得るために支持台を介し
て、誘電体共振器と筐体を接続している。例えば特開平
4−284706号公報には、低誘電率な素材(例えば
石英ガラス)を用いた支持台で筐体と接続した誘電体共
振器が示されている。2. Description of the Related Art Conventionally, in a dielectric resonator supporting structure of this type, a dielectric resonator and a housing are connected via a support to obtain resonance characteristics of the dielectric resonator. For example, Japanese Patent Application Laid-Open No. 4-284706 discloses a dielectric resonator connected to a housing by a support using a material having a low dielectric constant (for example, quartz glass).
【0003】また、実開平5−4607号公報には、多
孔質アルミナで形成された支持台を用いて誘電体共振器
と筐体を接続する構造が開示されている。Further, Japanese Utility Model Laid-Open No. 5-4607 discloses a structure in which a dielectric resonator and a housing are connected by using a support made of porous alumina.
【0004】[0004]
【発明が解決しようとする課題】上述した従来の技術に
おいては、熱によって支持台に破損が生じている。その
理由は、金属性の筐体を使用しているため、金属の熱膨
張係数と支持台の熱膨張係数の差により、熱ひずみが支
持台に加わるためである。In the prior art described above, the support base is damaged by heat. The reason for this is that since a metal housing is used, thermal strain is applied to the support due to the difference between the coefficient of thermal expansion of the metal and the coefficient of thermal expansion of the support.
【0005】例えば、特開平4−284706号公報の
支持台(石英ガラス)の熱膨張係数は8×10-6、誘電
体共振器の熱膨張係数は4×10-6、筐体をアルミとす
るとその熱膨張係数は23×10-6となる。誘電体共振
器と支持台の熱膨張係数差は小さいのでその間で生じる
ひずみは小さいが、支持台と筐体との熱膨張係数差は大
きく、その間で生じるひずみが大きく、支持台にクラッ
ク等が生じ、破損に到る。図5は従来の誘電体共振器の
支持構造を示す断面図である。誘電体共振器1と筐体5
は支持台2を介して接続されている。図6は図5の支持
構造での温度による各接続間での熱膨張の差を示すグラ
フである。誘電体共振器1と支持台2の熱膨張差は小さ
いが、支持台2と筐体5の熱膨張差が大きいことがわか
る。For example, the support (quartz glass) disclosed in Japanese Patent Laid-Open No. 4-284706 has a coefficient of thermal expansion of 8 × 10 −6, the dielectric resonator has a coefficient of thermal expansion of 4 × 10 −6, and the housing is made of aluminum. Then, the thermal expansion coefficient becomes 23 × 10 −6. Since the difference in thermal expansion coefficient between the dielectric resonator and the support is small, the strain generated between them is small.However, the difference in thermal expansion coefficient between the support and the housing is large, and the strain generated between them is large. Occurs, leading to damage. FIG. 5 is a cross-sectional view showing a conventional dielectric resonator support structure. Dielectric resonator 1 and housing 5
Are connected via the support 2. FIG. 6 is a graph showing the difference in thermal expansion between each connection depending on the temperature in the support structure of FIG. It can be seen that the difference in thermal expansion between the dielectric resonator 1 and the support 2 is small, but the difference in thermal expansion between the support 2 and the housing 5 is large.
【0006】本発明の目的は、上述の欠点を除去し、筐
体と支持台との熱膨張係数の違いにより生じる熱ひずみ
を低減し、支持台の破損、クラック等をなくし信頼性を
向上した誘電体共振器を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to eliminate the above-mentioned disadvantages, reduce the thermal strain caused by the difference in the thermal expansion coefficient between the housing and the support, and eliminate the damage and cracks of the support and improve the reliability. An object of the present invention is to provide a dielectric resonator.
【0007】[0007]
【課題を解決するための手段】上記課題を解決するた
め、本発明の誘電体共振器の支持構造は、誘電体共振器
1を支持する支持台を2つ以上の異なる熱膨張係数を有
する材料で直列に構成し、誘電体共振器1、支持台2,
3、筐体5の熱膨張係数の関係が、 誘電体共振器1<支持台2<支持台3<筐体4 となるよう設定している。In order to solve the above-mentioned problems, a supporting structure for a dielectric resonator according to the present invention comprises a support for supporting the dielectric resonator 1 made of a material having two or more different thermal expansion coefficients. And a dielectric resonator 1, a support 2,
3. The relationship between the coefficients of thermal expansion of the housing 5 is set such that dielectric resonator 1 <support 2 <support 3 <casing 4.
【0008】このような構成においては、誘電体共振
器、複数個の支持台及び筐体の各々を接続する部品の熱
膨張係数差を小さくするよう構成しているため、各々の
接続箇所で生じる熱ひずみは小さくなる。従って熱ひず
みによる接続箇所で生じる破損、クラック等は低減され
る。In such a configuration, since the difference in the coefficient of thermal expansion between the components connecting each of the dielectric resonator, the plurality of support bases, and the housing is made small, it occurs at each connection point. Thermal strain is reduced. Therefore, breakage, cracks, and the like that occur at connection points due to thermal strain are reduced.
【0009】[0009]
【発明の実施の形態】次に本発明の実施の形態について
図面を参照して説明する。Embodiments of the present invention will now be described with reference to the drawings.
【0010】図1は本発明の一実施の形態を示す断面図
である。図1を参照すると、誘電体共振器1は支持台2
と支持台3を介して筐体5と機械的に接続されている。
誘電体共振器1と筐体5の熱膨張係数の関係が誘電体共
振器<筐体の場合、支持台2と3の熱膨張係数の関係
は、誘電体共振器<支持台<支持台<筐体となってい
る。FIG. 1 is a sectional view showing one embodiment of the present invention. Referring to FIG. 1, a dielectric resonator 1 includes a support 2
And mechanically connected to the housing 5 via the support 3.
When the relationship between the thermal expansion coefficients of the dielectric resonator 1 and the housing 5 is dielectric resonator <the case, the relationship between the thermal expansion coefficients of the supporting tables 2 and 3 is as follows: dielectric resonator <supporting table <supporting table < It is a housing.
【0011】次に本発明の一実施例について図面を参照
して詳細に説明する。図1を参照すると誘電体共振器1
は通常セラミック材料で構成されており、熱膨張係数は
例えば4×10-6で非常に小さい。誘電体共振器1を収
納する筐体5は通常アルミで構成され熱膨張係数は23
×10-6程度で誘電体共振器1に比べ小さな値である。
この誘電体共振器1と筐体5の熱膨張差を緩衝するため
誘電体共振器1に接続する支持台2は、例えば、水晶材
を用いると熱膨張係数は12.2×10-6、支持台3は
例えば黄銅を用いると熱膨張係数は17.5×10-6で
あり、各々の接続部分に生じる熱ひずみは小さくなる。Next, an embodiment of the present invention will be described in detail with reference to the drawings. Referring to FIG. 1, dielectric resonator 1
Is usually made of a ceramic material, and has a very low coefficient of thermal expansion, for example, 4.times.10@-6. The housing 5 for housing the dielectric resonator 1 is usually made of aluminum and has a thermal expansion coefficient of 23.
The value is about 10-6, which is smaller than that of the dielectric resonator 1.
The support 2 connected to the dielectric resonator 1 for buffering the thermal expansion difference between the dielectric resonator 1 and the housing 5 is made of, for example, a quartz material and has a thermal expansion coefficient of 12.2 × 10 −6. When the support 3 is made of, for example, brass, the thermal expansion coefficient is 17.5.times.10@-6, and the thermal strain generated at each connection portion is small.
【0012】図2は図1の誘電共振器の支持構造におけ
る各接続部分の熱膨張の差を示したグラフである。各接
続間の熱膨張係数差を小さくしているため従来例(図
6)に比べ、熱膨張の傾斜がゆるやかになっている。FIG. 2 is a graph showing a difference in thermal expansion between connection portions in the support structure of the dielectric resonator shown in FIG. Since the difference in the coefficient of thermal expansion between the connections is reduced, the slope of the thermal expansion is gentler than in the conventional example (FIG. 6).
【0013】次に本発明の第2の実施の形態について図
3および図4を参照して説明する。Next, a second embodiment of the present invention will be described with reference to FIGS.
【0014】図3において、支持台が2つ接続されてお
り、誘電体共振器1を接続する支持台2はアルミナ(熱
膨張係数7×10-6)、支持台3は水晶(熱膨張係数1
2.2×10-6)を用いている。In FIG. 3, two supports are connected, a support 2 connecting the dielectric resonator 1 is alumina (coefficient of thermal expansion 7 × 10 −6), and a support 3 is quartz (coefficient of thermal expansion). 1
2.2.times.10@-6).
【0015】図4において、支持台が3つ接続されてお
り、支持台2はアルミナ、支持台3は水晶、支持台4は
黄銅を用いている。In FIG. 4, three supports are connected, the support 2 uses alumina, the support 3 uses quartz, and the support 4 uses brass.
【0016】[0016]
【発明の効果】以上述べたように、本発明では、誘電体
共振器と筐体との熱膨張係数差を緩衝させるため、支持
台の熱膨張係数を誘電体共振器より大きく、筐体より小
さくしているので、温度による熱ひずみを小さくでき、
支持台の破損を防止できるという効果がある。As described above, according to the present invention, in order to buffer the difference in thermal expansion coefficient between the dielectric resonator and the housing, the support base has a larger thermal expansion coefficient than the dielectric resonator, and has a higher thermal expansion coefficient than the dielectric resonator. Because it is small, thermal strain due to temperature can be reduced,
This has the effect that damage to the support can be prevented.
【図1】本発明の誘電体共振器の支持構造を示す断面
図。FIG. 1 is a sectional view showing a support structure of a dielectric resonator according to the present invention.
【図2】図1の支持構造における各接続間の熱膨張の差
を示すグラフ。FIG. 2 is a graph showing a difference in thermal expansion between each connection in the support structure of FIG. 1;
【図3】本発明の他の実施の形態を示す断面図。FIG. 3 is a cross-sectional view showing another embodiment of the present invention.
【図4】本発明の他の実施の形態を示す断面図。FIG. 4 is a cross-sectional view showing another embodiment of the present invention.
【図5】従来の誘電体共振器の支持構造を示す断面図。FIG. 5 is a cross-sectional view showing a conventional dielectric resonator support structure.
【図6】従来の誘電体共振器の支持構造における各接続
間の熱膨張の差を示すグラフ。FIG. 6 is a graph showing a difference in thermal expansion between connections in a conventional dielectric resonator support structure.
1 誘電体共振器 2〜4 支持台 5 筐体 DESCRIPTION OF SYMBOLS 1 Dielectric resonator 2-4 Support stand 5 Case
Claims (3)
持する支持台と、これらを内装する筐体からなる誘電体
共振器装置において、支持台を2つ以上の異なる熱膨張
係数を有する材料で構成したことを特徴とする誘電体共
振器の支持構造。1. A dielectric resonator device comprising a dielectric resonator, a support for supporting the dielectric resonator, and a housing containing the same, the support having two or more different thermal expansion coefficients. A support structure for a dielectric resonator, wherein the support structure is made of a material having the same.
張係数の関係が誘電体共振器<1つ目の支持台<…<n
個目の支持台<筐体となる請求項1の誘電体共振器の支
持構造。2. The relationship between the coefficient of thermal expansion of the dielectric resonator, the support, and the housing is as follows: dielectric resonator <first support <... <n
2. The support structure for a dielectric resonator according to claim 1, wherein the first support stand <the housing.
び黄銅から構成される請求項2の誘電体共振器の支持構
造。3. The support structure for a dielectric resonator according to claim 2, wherein said at least two supports are made of quartz and brass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8236642A JP2800800B2 (en) | 1996-09-06 | 1996-09-06 | Dielectric resonator support structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8236642A JP2800800B2 (en) | 1996-09-06 | 1996-09-06 | Dielectric resonator support structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1084206A true JPH1084206A (en) | 1998-03-31 |
| JP2800800B2 JP2800800B2 (en) | 1998-09-21 |
Family
ID=17003654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8236642A Expired - Lifetime JP2800800B2 (en) | 1996-09-06 | 1996-09-06 | Dielectric resonator support structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2800800B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020133181A1 (en) * | 2018-12-28 | 2020-07-02 | 华为技术有限公司 | Tm mode filter and manufacturing method therefor |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56145110U (en) * | 1980-03-31 | 1981-11-02 | ||
| JPS59202370A (en) * | 1983-05-02 | 1984-11-16 | 片岡 克己 | Cold heat storage type air conditioner |
| JPS6452307U (en) * | 1987-09-29 | 1989-03-31 | ||
| JPH0519972U (en) * | 1991-08-28 | 1993-03-12 | 日本航空電子工業株式会社 | Device for measuring temperature coefficient of dielectric resonator resonance frequency |
| JPH05110320A (en) * | 1991-10-15 | 1993-04-30 | Murata Mfg Co Ltd | Dielectric resonator device |
| JPH0742202U (en) * | 1993-12-24 | 1995-07-21 | 宇部興産株式会社 | Dielectric resonator device |
| JPH09214216A (en) * | 1996-01-30 | 1997-08-15 | Ngk Spark Plug Co Ltd | Dielectric resonator |
-
1996
- 1996-09-06 JP JP8236642A patent/JP2800800B2/en not_active Expired - Lifetime
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56145110U (en) * | 1980-03-31 | 1981-11-02 | ||
| JPS59202370A (en) * | 1983-05-02 | 1984-11-16 | 片岡 克己 | Cold heat storage type air conditioner |
| JPS6452307U (en) * | 1987-09-29 | 1989-03-31 | ||
| JPH0519972U (en) * | 1991-08-28 | 1993-03-12 | 日本航空電子工業株式会社 | Device for measuring temperature coefficient of dielectric resonator resonance frequency |
| JPH05110320A (en) * | 1991-10-15 | 1993-04-30 | Murata Mfg Co Ltd | Dielectric resonator device |
| JPH0742202U (en) * | 1993-12-24 | 1995-07-21 | 宇部興産株式会社 | Dielectric resonator device |
| JPH09214216A (en) * | 1996-01-30 | 1997-08-15 | Ngk Spark Plug Co Ltd | Dielectric resonator |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020133181A1 (en) * | 2018-12-28 | 2020-07-02 | 华为技术有限公司 | Tm mode filter and manufacturing method therefor |
| JP2022518360A (en) * | 2018-12-28 | 2022-03-15 | 華為技術有限公司 | TM mode filter and manufacturing method of TM mode filter |
| US11990661B2 (en) | 2018-12-28 | 2024-05-21 | Huawei Technologies Co., Ltd. | TM mode filter and method for manufacturing TM mode filter |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2800800B2 (en) | 1998-09-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR960030541A (en) | Surface acoustic wave device | |
| JP2800800B2 (en) | Dielectric resonator support structure | |
| JPH02261210A (en) | Crystal oscillator | |
| JPH07110277A (en) | Silicon pressure sensor | |
| JPH0766670A (en) | Piezoelectric vibrator | |
| JP2553807Y2 (en) | Oscillator | |
| JPH0521355B2 (en) | ||
| JPH06131934A (en) | Insulator | |
| JP2913629B2 (en) | Surface mount type crystal unit | |
| JPS5821201Y2 (en) | Kan'i Kimitsuku Udou Kiyoushinki | |
| JP2001094386A (en) | Crystal oscillator and its manufacturing method | |
| JP2532419Y2 (en) | Dielectric resonator device | |
| JPH0245721A (en) | Absolute pressure type semiconductor pressure sensor | |
| JPH09284013A (en) | Directional coupler | |
| JP2619198B2 (en) | Mounting structure of optical waveguide substrate in optical switch module | |
| JPH0732219B2 (en) | Semiconductor device | |
| JPH0119168Y2 (en) | ||
| JP3309964B2 (en) | Probe card | |
| US5068156A (en) | Semiconductor package | |
| JP2668697B2 (en) | Contour-slip crystal unit | |
| JPH087699Y2 (en) | Surface acoustic wave device | |
| JPS61150405A (en) | Pressure responsive element mounting apparatus | |
| JPH10335619A (en) | Photosensor substrate | |
| JPS60180174A (en) | Manufacture of semiconductor pressure sensor | |
| JPS5834931A (en) | Semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19980609 |