JPH11103028A5 - - Google Patents
Info
- Publication number
- JPH11103028A5 JPH11103028A5 JP1997263495A JP26349597A JPH11103028A5 JP H11103028 A5 JPH11103028 A5 JP H11103028A5 JP 1997263495 A JP1997263495 A JP 1997263495A JP 26349597 A JP26349597 A JP 26349597A JP H11103028 A5 JPH11103028 A5 JP H11103028A5
- Authority
- JP
- Japan
- Prior art keywords
- dummy
- memory cells
- memory cell
- lines
- bit lines
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9263495A JPH11103028A (ja) | 1997-09-29 | 1997-09-29 | 半導体集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9263495A JPH11103028A (ja) | 1997-09-29 | 1997-09-29 | 半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11103028A JPH11103028A (ja) | 1999-04-13 |
| JPH11103028A5 true JPH11103028A5 (cs) | 2005-06-09 |
Family
ID=17390324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9263495A Pending JPH11103028A (ja) | 1997-09-29 | 1997-09-29 | 半導体集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11103028A (cs) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100353553B1 (ko) * | 2000-09-04 | 2002-09-27 | 주식회사 하이닉스반도체 | 반도체장치의 캐패시터 레이아웃 |
| KR100412536B1 (ko) * | 2001-12-04 | 2003-12-31 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
| JP4388274B2 (ja) * | 2002-12-24 | 2009-12-24 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
-
1997
- 1997-09-29 JP JP9263495A patent/JPH11103028A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100186300B1 (ko) | 계층적 워드라인 구조를 갖는 반도체 메모리 소자 | |
| JP2005260014A5 (cs) | ||
| JPH11163299A (ja) | 半導体メモリ | |
| JPH09270468A5 (ja) | 半導体装置及びマイクロプロセッサ | |
| JP2006012337A (ja) | 積層型半導体メモリ装置 | |
| JPS61110459A (ja) | 半導体メモリ | |
| JPH0772991B2 (ja) | 半導体記憶装置 | |
| JP2011014754A (ja) | 半導体集積回路装置 | |
| KR910003663A (ko) | 다이나믹형 반도체메모리장치 | |
| JPS636870A (ja) | 半導体装置 | |
| US7525829B2 (en) | Semiconductor storage device | |
| KR960038971A (ko) | 트리플 포트 반도체 메모리장치 | |
| JPH11103028A5 (cs) | ||
| JP4523681B2 (ja) | 半導体集積回路装置 | |
| JPH02148763A (ja) | 半導体記憶装置 | |
| JP2004119897A5 (cs) | ||
| KR930001738B1 (ko) | 반도체 메모리장치의 워드라인 드라이버 배치방법 | |
| KR940007878A (ko) | 반도체 기억장치 | |
| JPH0834296B2 (ja) | 半導体記憶装置 | |
| JPS61217994A (ja) | 半導体記憶装置 | |
| JPH036596B2 (cs) | ||
| JP3612276B2 (ja) | ダイナミック型半導体記憶装置 | |
| KR940007876A (ko) | 폴디드 비트라인 방식의 디램쎌 어레이 | |
| EP0496406B1 (en) | Semiconductor memory apparatus | |
| JPH07296589A (ja) | 半導体記憶装置 |