JPH11103028A5 - - Google Patents

Info

Publication number
JPH11103028A5
JPH11103028A5 JP1997263495A JP26349597A JPH11103028A5 JP H11103028 A5 JPH11103028 A5 JP H11103028A5 JP 1997263495 A JP1997263495 A JP 1997263495A JP 26349597 A JP26349597 A JP 26349597A JP H11103028 A5 JPH11103028 A5 JP H11103028A5
Authority
JP
Japan
Prior art keywords
dummy
memory cells
memory cell
lines
bit lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997263495A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11103028A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP9263495A priority Critical patent/JPH11103028A/ja
Priority claimed from JP9263495A external-priority patent/JPH11103028A/ja
Publication of JPH11103028A publication Critical patent/JPH11103028A/ja
Publication of JPH11103028A5 publication Critical patent/JPH11103028A5/ja
Pending legal-status Critical Current

Links

JP9263495A 1997-09-29 1997-09-29 半導体集積回路装置 Pending JPH11103028A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9263495A JPH11103028A (ja) 1997-09-29 1997-09-29 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9263495A JPH11103028A (ja) 1997-09-29 1997-09-29 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPH11103028A JPH11103028A (ja) 1999-04-13
JPH11103028A5 true JPH11103028A5 (fr) 2005-06-09

Family

ID=17390324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9263495A Pending JPH11103028A (ja) 1997-09-29 1997-09-29 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPH11103028A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100353553B1 (ko) * 2000-09-04 2002-09-27 주식회사 하이닉스반도체 반도체장치의 캐패시터 레이아웃
KR100412536B1 (ko) * 2001-12-04 2003-12-31 주식회사 하이닉스반도체 반도체 소자의 제조 방법
JP4388274B2 (ja) * 2002-12-24 2009-12-24 株式会社ルネサステクノロジ 半導体記憶装置

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