JPH11111742A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

(57) [Summary] [PROBLEMS] To reduce the size of a package and the manufacturing cost. SOLUTION: A diode 10 provided with a surface mount type resin-sealed package has a first main surface 1 which is a front and a back of a square plate-shaped pellet 11 in which a diode element is formed.
2, the cathode electrode 14 and the anode electrode 1 on the second main surface 13
5, a cathode lead 16 is mechanically and electrically connected to the cathode electrode 14 by a bonding layer 17, and an anode lead 19 is connected to the anode electrode 15 via a bump 18 formed by a wire bonding method. It is connected mechanically and electrically. Cathode side lead 16
A resin sealing body 20 is formed between the anode lead 19 and the anode lead 19 by a potting method so as to seal the pellet 11 with the resin. [Effect] Since the size of the resin-sealed package can be reduced, the mounting density on the printed wiring board can be improved, the number of components and the number of processing steps can be reduced, and the manufacturing cost can be reduced.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technology for manufacturing a semiconductor device, and more particularly to a technology for manufacturing a surface-mounted resin-encapsulated package. Effective technology.

[0002]

2. Description of the Related Art A diode provided with a surface-mount type resin-sealed package is a square plate-shaped semiconductor pellet (hereinafter, referred to as a pellet) in which a diode element is formed.
And an electrode is formed on one main surface of the pellet. The pellet is bonded to a tab on a main surface opposite to the electrode, and a first inner lead is integrally connected to the tab. A first outer lead is integrally connected to the first inner lead. On the side opposite to the first inner lead, a second inner lead integrally connected to the second outer lead is arranged, and the second inner lead is electrically connected to the electrode by a wire. Pellets, tabs, both inner leads and wires are resin-sealed by a resin sealing body, and both outer leads projecting outward from a pair of opposing side surfaces of the resin sealing body are bent into a gull-wing shape. . This resin sealing body
A pair of outer leads bent in a wing shape constitute a surface-mounted resin-sealed package.

[0003] Japanese Patent Application Laid-Open No. 9-7905 discloses an example describing a diode manufacturing technique.

[0004]

In a diode provided with a conventional surface-mounted resin-sealed package, there is a limit in reducing the size of the package and the manufacturing cost.

An object of the present invention is to provide an epoch-making semiconductor device capable of reducing the size of a package and the manufacturing cost.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0007]

The outline of a typical invention among the inventions disclosed in the present application is as follows.

That is, in the semiconductor device, different electrodes are respectively formed on a pair of front and back end faces of the semiconductor pellet, and different leads are mechanically and electrically connected to the two electrodes, respectively. A resin sealing body for resin-sealing the semiconductor pellet is formed between the two leads.

According to the above-described means, the semiconductor pellet is sandwiched between the pair of leads, and the resin sealing body is molded between the two leads. Therefore, the package can be extremely reduced in size, and the number of parts and the number of parts can be reduced. Since the number of processing steps is small, the manufacturing cost can be significantly reduced.

[0010]

1A and 1B show a diode according to an embodiment of the present invention. FIG. 1A is a perspective view and FIG. 1B is a front sectional view. FIG. 2 is a process chart showing a diode manufacturing method according to one embodiment of the present invention. FIG. 3 and subsequent drawings are schematic views showing the respective steps.

In the present embodiment, the semiconductor device according to the present invention is configured as a diode having a surface-mount type resin-sealed package. The diode 10 includes a square-plate-shaped semiconductor pellet (hereinafter, referred to as a pellet) 11 in which a diode element is formed.
A pair of electrodes, a cathode electrode 14 and an anode electrode 15, are formed on the first main surface 12 and the second main surface 13 of the pellet 11, which are the front and back sides, respectively. A cathode-side lead 16 is mechanically and electrically connected to the cathode electrode 14 by a bonding layer 17 formed of a gold-silicon eutectic layer, and an anode-side lead 19 is formed on the anode electrode 15 by wire bonding. 18 and is mechanically and electrically connected. A resin sealing body 20 is formed between the cathode lead 16 and the anode lead 19 by a potting method so as to seal the pellet 11 with the resin.

Next, a method of manufacturing a diode according to an embodiment of the present invention will be described. With this description, the details of the configuration of the diode will be made clear together.

As shown in FIG. 2, a large number of pellets 11 used in a diode manufacturing method are formed on a wafer in a so-called pre-process in a semiconductor device manufacturing process, and are individually cut (diced). ). That is, in a so-called pre-process, a diode element is formed on a wafer for each pellet, and a cathode electrode and an anode electrode are respectively formed on both main surfaces of the wafer. Thereafter, in a dicing step, the wafer is diced for each pellet.

The diced pellet 11 is formed in a cubic shape as shown in FIG. 3, and a first main surface 12 corresponding to the back surface of the wafer has a cathode electrode 14 formed thereon.
Are formed, and an anode electrode 15 is formed on the second main surface 13 corresponding to the front surface side of the wafer. Cathode electrode 1
Reference numeral 4 denotes a gold vapor deposition layer formed by vapor deposition of gold (Au) on the entire back surface of the wafer, and is electrically connected to the cathode side of the diode element (not shown).
The anode electrode 15 is composed of an aluminum wiring formed by patterning each pellet on the wafer, and is electrically connected to the anode side of the diode element (not shown).

In this diode manufacturing method, a cathode-side multiple lead frame and an anode-side multiple lead frame are used, and the cathode-side multiple lead frame and the anode-side multiple lead frame have the same configuration. Therefore, as shown in FIG. 2, they are prepared in the same multiple lead frame preparation step.

As shown in FIG. 3, a multiple lead frame 21 commonly used for a cathode-side multiple lead frame and an anode-side multiple lead frame has a plurality of unit lead frames 22 connected in series. And an outer frame 23 formed in an elongated plate shape. Outer frame 2
3, a plurality of positioning holes 23a are formed at regular intervals in the longitudinal direction, and a plurality of suspension leads 24 are arranged at one long side of the outer frame 23 at regular intervals in the longitudinal direction, and are integrally formed in the perpendicular direction. It is projected. Leads 25 for constituting the cathode-side lead 16 and the anode-side lead 19 are integrally protruded from the tip of each suspension lead 24.
5 is formed in a square flat plate shape whose plane shape is slightly larger than the pellet 11. A gold plating layer 26 is formed on the main surface of the lead 25 on the bonding side.

As shown in FIG. 2, the multiple lead frames manufactured in the multiple lead frame preparation step are supplied to the first lead connection step. In the first lead connection step, as shown in FIG.
Are pellet-bonded on the leads 25 of the multiple lead frame 21.

That is, as shown in FIG. 4, the diced pellets 11 are vacuum-adsorbed and held by a collet 31 of a pellet bonding apparatus, and are pressed onto the leads 25 of the multiple lead frame 21. At this time, since the lead 25 is heated by the heat block 32, the first main surface 12 of the pellet 11 and the lead 2 are heated.
5, a bonding layer 17 made of a gold-silicon eutectic layer is formed. By this pellet bonding, a cathode-side lead 16 is mechanically and electrically connected to the cathode electrode 14 of the pellet 11 via the bonding layer 17.

The assembly of the pellets and the multiple lead frames after the first lead connection step is sent to a bump forming step as shown in FIG. 2, and the anode electrode 15 of each pellet 11 is made of gold (Au). The bumps 18 are formed by a wire bonding method as shown in FIG.

That is, as shown in FIG. 5A, the capillary 4 of the thermocompression bonding wire bonding apparatus is used.
A ball 43 serving as a base of a bump is formed by being heated and melted by a torch at a tip end of the gold wire 42 inserted through the torch in a state where a tail is extended from the tip end by a predetermined length. As shown in FIG. 5B, the ball 43 is pressed by the capillary 41 onto the anode electrode 15 of the pellet 11 of the multiple lead frame 21 supported by the heat block 44 and is thermocompression-bonded. . Next, when the gold wire 42 is pulled up, the gold wire 42
As shown in FIG. 5C, the bumps 18 made of gold are formed on the anode electrodes 15 of the pellets 11 by the balls 43 because they are cut off at the connection portions with 3.

The assembly after the bump formation step is sent to the second lead connection step as shown in FIG. 2, and the anode side lead 19 is connected to the anode electrode 15 of each pellet 11 via the bump 18 as shown in FIG. It is connected mechanically and electrically as shown.

That is, in the second lead connecting step, the multiple lead frames 21 are supplied as the anode-side multiple lead frames as shown in FIG. Each of the pellets 11 is arranged on the assembly so as to be aligned with the bump 18 as shown in FIG. 6A. In this state, FIG.
As shown in (b), when the leads 25 of the anode-side multiple lead frame are pressed by the bonding tool 52 against the bumps 18 while the leads 25 of the cathode-side multiple lead frame are heated by the heat block 51. Since the bumps 18 are thermocompression-bonded to the leads 25 of the anode-side multiple lead frame, the leads 25 as the anode-side leads 19 are mechanically and electrically connected to the anode electrode 15 of the pellet 11 by the bumps 18. become.

The assembly after the second lead connection step is sent to a resin sealing body molding step as shown in FIG. Is formed by a potting method so as to seal the pellet 11 with resin as shown in FIG.

That is, as shown in FIG. 7, a potting resin 61 is provided in a space between the cathode lead 16 and the anode lead 19 by a potting tool 62.
After being injected and cured, the resin sealing body 20 for sealing the pellet 11 with resin is formed so as to surround the outer periphery of the pellet 11.

As shown in FIG. 2, the molded product having undergone the resin sealing body molding step is sent to a lead cutting step, and is cut at a connection portion between the suspension leads 24 and the leads 25 of the multiple lead frame 21. . Thus, the diode 10 shown in FIG. 1 is manufactured.

The diode 10 having the above-described structure manufactured as described above is surface-mounted on a printed wiring board as shown in FIG. That is, the printed wiring board 7
In a state where the cathode-side lead 16 and the anode-side lead 19 are aligned with the pair of lands 72 formed respectively on the first and second lands 1, mechanically and electrically via the respective soldering layers 73 formed by reflow soldering. Connected.

According to the above embodiment, the following effects can be obtained. Since the pellet is sandwiched between the cathode side lead and the anode side lead and the resin sealing body is formed between the cathode side lead and the anode side lead, the size of the resin sealed package can be extremely reduced. The mounting density on the substrate can be improved.

By mechanically and electrically connecting the anode electrode and the anode lead by bumps, the second bonding of the bonding wire can be omitted, so that the number of parts and the number of processing steps can be reduced. In addition, the manufacturing cost can be significantly reduced.

By potting the resin between the cathode side lead and the anode side lead to form a resin sealing body, it is possible to omit a molding die for forming the resin sealing body, thereby significantly increasing the manufacturing cost. Can be reduced.

FIGS. 8A and 8B show a diode according to another embodiment of the present invention, wherein FIG. 8A is a perspective view and FIG. 8B is a front sectional view.

The second embodiment differs from the first embodiment in that the cathode lead 16A and the anode lead 1
9A is that each is bent in an L-shape. According to the second embodiment, since the soldering allowance can be increased, the mounting strength can be increased.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above-described embodiments, and may be variously modified without departing from the gist thereof. Needless to say.

For example, the resin sealing body is not limited to being molded by the potting method, but may be molded by a pressure molding method such as a transistor molding method.

In the above description, the case where the invention made by the present inventor is mainly applied to a diode production technique as a background of the application has been described. However, the present invention is not limited to this. The present invention can be applied to all semiconductor device production technologies such as transistor and IC production technologies.

[0035]

The effects obtained by typical aspects of the invention disclosed in the present application will be briefly described as follows.

By sandwiching a semiconductor pellet between a pair of leads and molding a resin sealing body between the two leads, the package can be extremely reduced, and the number of parts and the number of processing steps are small, so that the manufacturing cost is reduced. It can be significantly reduced.

[Brief description of the drawings]

1A and 1B show a diode according to an embodiment of the present invention, wherein FIG. 1A is a perspective view and FIG. 1B is a front sectional view.

FIG. 2 is a process chart showing a method for manufacturing a diode according to an embodiment of the present invention.

FIG. 3 is an exploded perspective view showing a pellet and a multiple lead frame.

FIGS. 4 (a) and 4 (b) are partially omitted front views each showing a first lead connection step, each part being omitted.

FIGS. 5A, 5B, and 5C are partially cutaway front views each showing a bump formation step, partially omitted.

FIGS. 6 (a) and (b) are front views, each partially omitted and partially cut, showing a second lead connection step.

FIG. 7 is a partially omitted perspective view showing a resin sealing body forming step.

8A and 8B show a diode according to another embodiment of the present invention, wherein FIG. 8A is a perspective view and FIG. 8B is a front sectional view.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 10 ... Diode (semiconductor device), 11 ... Pellet (semiconductor pellet), 12 ... First principal surface, 13 ... Second principal surface, 1
4 ... cathode electrode, 15 ... anode electrode, 16 ... cathode side lead, 17 ... bonding layer, 18 ... bump, 1
9: Anode side lead, 20: Resin sealed body, 21: Multiple lead frame, 22: Unit lead frame, 23: Outer frame, 23a: Positioning hole, 24: Suspended lead, 25: Lead, 26: Gold plating layer , 31 ... collet, 32 ... heat block, 41 ... capillary, 42 ... gold wire, 43 ...
Ball, 44: Heat block, 51: Heat block, 52: Bonding tool, 61: Potting resin, 62: Potting tool, 71: Printed wiring board, 72: Land, 73: Soldering layer.

Claims (10)

[Claims] 1. A semiconductor pellet having different electrodes formed on a pair of front and rear end surfaces, respectively, and mutually different leads mechanically and electrically connected to the two electrodes, respectively. A resin molded body for molding the semiconductor pellet with a resin. 2. The semiconductor device according to claim 1, wherein one of said leads is connected to said electrode by a gold-silicon eutectic layer. 3. The semiconductor device according to claim 1, wherein one of the leads is connected to the electrode via a bump formed by wire bonding. 4. The semiconductor device according to claim 1, wherein said resin sealing body is formed by a potting method. 5. The semiconductor device according to claim 1, wherein said resin sealing body is formed by a transfer molding method. 6. The semiconductor device according to claim 1, wherein said semiconductor pellet is a diode element. 7. A first lead connecting step in which a lead is mechanically and electrically connected to one of a pair of electrodes formed on a pair of front and rear end surfaces of the semiconductor pellet, respectively, and the lead is connected to the semiconductor pellet. A second lead is connected mechanically and electrically to the other of the pair of electrodes.
A method of manufacturing a semiconductor device, comprising: a lead connection step; and a resin sealing body molding step of molding a resin sealing body for resin sealing the semiconductor pellet between the two leads. 8. The method according to claim 7, wherein one of the leads is connected to the electrode by a gold-silicon eutectic layer. 9. The method according to claim 7, wherein one of the leads is connected to the electrode via a bump formed by wire bonding. 10. The resin sealing body is formed by a potting method.
13. The method for manufacturing a semiconductor device according to item 5.