JPH1111943A - Oxide superconductor and its production - Google Patents
Oxide superconductor and its productionInfo
- Publication number
- JPH1111943A JPH1111943A JP9161242A JP16124297A JPH1111943A JP H1111943 A JPH1111943 A JP H1111943A JP 9161242 A JP9161242 A JP 9161242A JP 16124297 A JP16124297 A JP 16124297A JP H1111943 A JPH1111943 A JP H1111943A
- Authority
- JP
- Japan
- Prior art keywords
- oxide superconductor
- compound
- temperature
- phase
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 229910052713 technetium Inorganic materials 0.000 claims abstract description 13
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 10
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 10
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 9
- 229910052689 Holmium Inorganic materials 0.000 claims abstract description 9
- 229910052772 Samarium Inorganic materials 0.000 claims abstract description 9
- 229910052771 Terbium Inorganic materials 0.000 claims abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 9
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 9
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 9
- 229910052692 Dysprosium Inorganic materials 0.000 claims abstract description 8
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 8
- 229910052775 Thulium Inorganic materials 0.000 claims abstract description 8
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract description 8
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 8
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 8
- 229910052738 indium Inorganic materials 0.000 claims abstract description 8
- 229910052742 iron Inorganic materials 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 8
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 8
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 8
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 8
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 8
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 8
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 8
- 229910052691 Erbium Inorganic materials 0.000 claims abstract description 7
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 7
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 7
- 229910052765 Lutetium Inorganic materials 0.000 claims abstract description 7
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 7
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 7
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 7
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 229910052718 tin Inorganic materials 0.000 claims abstract description 7
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 7
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 7
- 229910002480 Cu-O Inorganic materials 0.000 claims abstract description 6
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 6
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 6
- 229910052762 osmium Inorganic materials 0.000 claims abstract description 6
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 6
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 6
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 6
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 5
- 238000002844 melting Methods 0.000 claims abstract description 4
- 230000008018 melting Effects 0.000 claims abstract description 4
- 229910052792 caesium Inorganic materials 0.000 claims abstract description 3
- 150000001875 compounds Chemical class 0.000 claims description 29
- 239000000203 mixture Substances 0.000 claims description 18
- 239000002994 raw material Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 7
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 7
- 241000954177 Bangana ariza Species 0.000 claims description 5
- -1 Z r Inorganic materials 0.000 claims description 5
- 238000010304 firing Methods 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 21
- 239000012071 phase Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 16
- 239000013078 crystal Substances 0.000 description 14
- 239000000843 powder Substances 0.000 description 14
- 239000002245 particle Substances 0.000 description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 238000002425 crystallisation Methods 0.000 description 9
- 230000008025 crystallization Effects 0.000 description 9
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 8
- 229910001882 dioxygen Inorganic materials 0.000 description 8
- 239000011812 mixed powder Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052717 sulfur Inorganic materials 0.000 description 5
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 4
- 244000046052 Phaseolus vulgaris Species 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000001354 calcination Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005303 weighing Methods 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、特に、電流リード、磁
気軸受け、磁気シールド、バルクマグネット等に用いら
れる均一で高い臨界電流密度を示す酸化物超電導体およ
びその製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an oxide superconductor having a uniform and high critical current density used for current leads, magnetic bearings, magnetic shields, bulk magnets, and the like, and a method for producing the same.
【0002】[0002]
【従来の技術】電流リード、磁気軸受け、磁気シール
ド、バルクマグネット等に用いられる均一で高い臨界電
流密度を示す酸化物超電導体の製造方法としては、RE
化合物(REはY,Sm,Eu,Gd,Tb,Dy,H
o,Er,Tm,Yb,Luから選ばれる1種又は2種
以上の希土類元素)、Ba化合物及びCu化合物を含む
原料混合体に、少なくとも該原料混合体の融点より高い
温度領域における焼成工程を含む処理を施してREーB
aーCuーO系酸化物超電導体を製造する方法が知られ
ている(例えば、特公平7ー51463号公報参照)。2. Description of the Related Art An oxide superconductor having a uniform and high critical current density used for a current lead, a magnetic bearing, a magnetic shield, a bulk magnet and the like is manufactured by RE.
Compound (RE is Y, Sm, Eu, Gd, Tb, Dy, H
a raw material mixture containing at least one rare earth element selected from the group consisting of o, Er, Tm, Yb, and Lu), a Ba compound, and a Cu compound; RE-B
A method of producing an a-Cu-O-based oxide superconductor is known (for example, see Japanese Patent Publication No. 7-51463).
【0003】特公平7ー51463号公報に記載の方法
は、RE、Ba、Cuの化合物を所定のモル比で混合し
た原料混合体を、一度溶融させた後、急冷凝固させ、こ
の凝固した原料混合体を微細に粉砕し、再び部分的に液
相を呈する高温領域に加熱してその後徐冷することによ
って、超電導相を成長させる。そしてさらに、酸素雰囲
気中でアニール処理を行なうことにより、比較的高い臨
界電流密度を示す酸化物超電導体を得るようにしたもの
である。The method described in Japanese Patent Publication No. 7-51463 discloses a method in which a raw material mixture in which RE, Ba, and Cu compounds are mixed at a predetermined molar ratio is melted once, rapidly solidified, and then solidified. The superconducting phase is grown by finely pulverizing the mixture, heating the mixture again to a high temperature region which partially exhibits a liquid phase, and then slowly cooling the mixture. Further, by performing an annealing treatment in an oxygen atmosphere, an oxide superconductor having a relatively high critical current density is obtained.
【0004】この手法によって、REーBaーCuーO
系超電導体を作製すると、REBa2 Cu3 O7-X 相中
にRE2 BaCuO5 相が微細に分散した組織となり、
このRE2 BaCuO5 相が磁束をピン止めするピンニ
ングセンターとして働き臨界電流密度を高める効果があ
る。[0004] By this method, RE-Ba-Cu-O
When a system-based superconductor is produced, a structure in which the RE 2 BaCuO 5 phase is finely dispersed in the REBa 2 Cu 3 O 7-X phase is obtained,
The RE 2 BaCuO 5 phase functions as a pinning center for pinning magnetic flux, and has an effect of increasing the critical current density.
【0005】[0005]
【発明が解決しようとする課題】しかしながら、RE2
BaCuO5 相によるピン止め力は磁場の存在によって
弱められてしまうため、このRE2 BaCuO5 相によ
るピン止め点だけでは高磁場において十分な特性が得ら
れなかった。However, the RE 2
Since the pinning force of the BaCuO 5 phase is weakened by the presence of the magnetic field, sufficient characteristics cannot be obtained in a high magnetic field only by the pinning point of the RE 2 BaCuO 5 phase.
【0006】本発明は、上記問題点を解決するためにな
されたものであり、高磁場においてもより高い臨界電流
密度特性を有する酸化物超電導体及びその製造方法を提
供することを目的としている。The present invention has been made to solve the above problems, and has as its object to provide an oxide superconductor having higher critical current density characteristics even in a high magnetic field, and a method for manufacturing the same.
【0007】[0007]
【課題を解決するための手段】上記課題を解決する手段
として、請求項1の発明は、REBa2 Cu3 O7-X 相
(REはY,Sm,Eu,Gd,Tb,Dy,Ho,E
r,Tm,Yb,Luから選ばれる1種又は2種以上の
希土類元素)中にRE2 BaCuO5 相が微細に分散し
た酸化物超電導体において、Mg,Al,Si,Ca,
Sc,Ti,V,Cr,Mn,Fe,Co,Ni,Z
n,Sr,Zr,Nb,Mo,Tc,In,Sn,S
b,Tc,Cs,La,Ce,Pr,Nd,Hf,T
a,W,Biの何れか1種ないし2種以上の元素が0.
05wt%〜1wt%含まれることを特徴とする酸化物
超電導体である。Means for Solving the Problems As means for solving the above problems, the invention of claim 1 relates to a REBa 2 Cu 3 O 7 -X phase (RE is Y, Sm, Eu, Gd, Tb, Dy, Ho, E
In the oxide superconductor in which the RE 2 BaCuO 5 phase is finely dispersed in one or more rare earth elements selected from r, Tm, Yb, and Lu), Mg, Al, Si, Ca,
Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Z
n, Sr, Zr, Nb, Mo, Tc, In, Sn, S
b, Tc, Cs, La, Ce, Pr, Nd, Hf, T
a, W, or Bi is one or more elements of 0.
An oxide superconductor characterized by containing from 05 wt% to 1 wt%.
【0008】請求項2の発明は、請求項1に記載の酸化
物超電導体において、Pt、Pd、Ru、Rh,Ir、
Os、Reの各金属又は各化合物の1種又は2種以上を
0.05〜5wt%(但し、化合物の場合は、その化合
物に含有される前記金属の量で示す)含むことを特徴と
する酸化物超電導体である。According to a second aspect of the present invention, there is provided the oxide superconductor according to the first aspect, wherein Pt, Pd, Ru, Rh, Ir,
One or more of each metal or each compound of Os and Re is contained in an amount of 0.05 to 5 wt% (however, in the case of a compound, it is indicated by the amount of the metal contained in the compound). It is an oxide superconductor.
【0009】請求項3の発明は、請求項1又は2のいず
れかに記載の酸化物超電導体において、Agを1〜30
wt%含むことを特徴とする酸化物超電導体である。According to a third aspect of the present invention, there is provided the oxide superconductor according to the first or second aspect, wherein Ag is 1 to 30.
It is an oxide superconductor characterized by containing wt%.
【0010】請求項3の発明は、RE化合物(REは
Y,Sm,Eu,Gd,Tb,Dy,Ho,Er,T
m,Yb,Luから選ばれる1種又は2種以上の希土類
元素)、Ba化合物及びCu化合物を含む原料混合体
に、少なくとも該原料混合体の融点より高い温度領域に
おける焼成工程を含む処理を施してREーBaーCuー
O系酸化物超電導体を製造する酸化物超電導体の製造方
法において、Mg,Al,Si,Ca,Sc,Ti,
V,Cr,Mn,Fe,Co,Ni,Zn,Sr,Z
r,Nb,Mo,Tc,In,Sn,Sb,Tc,C
s,La,Ce,Pr,Nd,Hf,Ta,W,Biの
何れか1種ないし2種以上の元素を0.05wt%〜1
wt%(但し、化合物の場合は、その化合物に含有され
る前記金属の量で示す)添加することを特徴とする酸化
物超電導体の製造方法である。[0010] The invention of claim 3 is a compound of the present invention, wherein RE is Y, Sm, Eu, Gd, Tb, Dy, Ho, Er, T
A raw material mixture containing one or more rare earth elements selected from m, Yb, and Lu), a Ba compound, and a Cu compound is subjected to a treatment including a firing step at least in a temperature range higher than the melting point of the raw material mixture. In a method for producing an oxide superconductor for producing a RE—Ba—Cu—O-based oxide superconductor, Mg, Al, Si, Ca, Sc, Ti,
V, Cr, Mn, Fe, Co, Ni, Zn, Sr, Z
r, Nb, Mo, Tc, In, Sn, Sb, Tc, C
one or more of s, La, Ce, Pr, Nd, Hf, Ta, W, and Bi in an amount of 0.05 wt% to 1 wt.
wt. (however, in the case of a compound, it is indicated by the amount of the metal contained in the compound).
【0011】請求項5の発明は、請求項4に記載の酸化
物超電導体の製造方法において、前記原料混合体に、さ
らに、Pt、Pd、Ru、Rh、Ir、Os、Reの各
金属又は各化合物の1種又は2種以上を0.05〜5w
t%(但し、化合物の場合は、その化合物に含有される
前記金属の量で示す)添加することを特徴とする酸化物
超電導体の製造方法である。According to a fifth aspect of the present invention, in the method for producing an oxide superconductor according to the fourth aspect, the raw material mixture further includes a metal of Pt, Pd, Ru, Rh, Ir, Os, or Re. One to two or more of each compound is 0.05 to 5 w
The present invention provides a method for producing an oxide superconductor, characterized by adding t% (however, in the case of a compound, the amount is indicated by the amount of the metal contained in the compound).
【0012】請求項6の発明は、請求項4又は5に記載
の酸化物超電導体の製造方法において、前記原料混合体
に、さらに、Agを1〜30wt%添加することを特徴
とする酸化物超電導体の製造方法である。According to a sixth aspect of the present invention, in the method for producing an oxide superconductor according to the fourth or fifth aspect, Ag is further added to the raw material mixture in an amount of 1 to 30 wt%. This is a method for manufacturing a superconductor.
【0013】RE化合物(REはY,Sm,Eu,G
d,Tb,Dy,Ho,Er,Tm,Yb,Luから選
ばれる1種又は2種以上の希土類元素)、Ba化合物及
びCu化合物を含む原料混合体に、少なくとも該原料混
合体の融点より高い温度領域における焼成工程を含む処
理を施してREーBaーCuーO系酸化物超電導体を製
造すると、REBa2 Cu3 O7-X 相中に0.1〜30
μm程度のRE2 BaCuO5 相が微細に分散し、臨界
電流密度を高めることができる。RE compounds (RE is Y, Sm, Eu, G
d, Tb, Dy, Ho, Er, Tm, Yb, Lu, at least one or more rare earth elements), a Ba compound and a Cu compound, at least higher than the melting point of the raw material mixture. When subjected to a treatment comprising a calcination step in the temperature range to produce the RE over Ba over Cu over O-based oxide superconductor, in REBa 2 Cu 3 O 7-X phase 0.1 to 30
The RE 2 BaCuO 5 phase of about μm is finely dispersed, and the critical current density can be increased.
【0014】さらに、前記原料混合体にMg,Al,S
i,Ca,Sc,Ti,V,Cr,Mn,Fe,Co,
Ni,Zn,Sr,Zr,Nb,Mo,Tc,In,S
n,Sb,Te,Cs,La,Ce,Pr,Nd,H
f,Ta,W,Bi,の何れか1種ないし2種以上の元
素を0.05wt%〜1wt%添加すると、これらの元
素が超電導性を示すREBa2 Cu3 O7-X 相中のR
E、BaないしCuサイトに一部置換され、微細且つ部
分的に超電導性が弱い部分ができる。このような部分は
高磁場下において超電導状態から常電導状態になり、新
たなピンニングセンターとして働くことになる。よっ
て、高磁場下においてもこのような新たなピンニングセ
ンターが発生するため、高磁場下においても高い臨界電
流密度が得られる。Further, Mg, Al, S is added to the raw material mixture.
i, Ca, Sc, Ti, V, Cr, Mn, Fe, Co,
Ni, Zn, Sr, Zr, Nb, Mo, Tc, In, S
n, Sb, Te, Cs, La, Ce, Pr, Nd, H
When one or more elements of any one of f, Ta, W, and Bi are added in an amount of 0.05 wt% to 1 wt%, these elements become R in the REBa 2 Cu 3 O 7 -X phase exhibiting superconductivity.
E, Ba, or Cu sites are partially substituted, and fine and partially weak portions of superconductivity are formed. Such a portion changes from a superconducting state to a normal conducting state under a high magnetic field, and functions as a new pinning center. Therefore, such a new pinning center is generated even under a high magnetic field, so that a high critical current density can be obtained even under a high magnetic field.
【0015】この添加量は0.05wt%以下では効果
が薄く、1wt%以上では超電導特性の低い部分が多く
なりすぎるために、全体の特性も劣化させてしまう。If the amount of addition is less than 0.05 wt%, the effect is small, and if it is more than 1 wt%, the portion having low superconductivity is too large, and the overall characteristics are also deteriorated.
【0016】なお、Ptは、超電導体を形成するための
原料混合体を作製する処理を行なう際に、白金坩堝など
から混入することがあるが、これは0.05〜5wt%
の範囲で含まれていても、同様に高特性を示すことが確
認されている。また、Pt、Pd、Ru、Rh、Ir、
Os、Reの金属もしくは化合物粉末を0.05〜5w
t%の範囲で添加しても、同様に高特性を示すことが確
認されている。Pt may be mixed in from a platinum crucible or the like when performing a process for preparing a raw material mixture for forming a superconductor.
It has been confirmed that even when contained within the range, high characteristics are similarly exhibited. Also, Pt, Pd, Ru, Rh, Ir,
Os, Re metal or compound powder 0.05-5w
It has been confirmed that even when added in the range of t%, high characteristics are similarly exhibited.
【0017】さらにAgの金属もしくは化合物粉末を1
〜30wt%添加すると、機械強度、耐水性が向上す
る。Further, a metal or compound powder of Ag is added to 1
Addition of 3030 wt% improves mechanical strength and water resistance.
【0018】[0018]
(実施例1)Y2 O3 、BaCO3 、CuOの各原料粉
末をY:Ba:Cu=18:24:34になるように秤
量した後、BaCO3 、CuOのみを大気中、880℃
で30時間焼成してBaCuO2 とCuOの仮焼粉を得
た(モル比でBaCuO2 :CuO=24:10)。次
に、この仮焼粉をポットミルを使用して粉砕することに
よって平均粒径を約2μmとした後、あらかじめ秤量し
ておいた平均粒径約1μmのY2 O3 と平均粒径約0.
02μmのPt粉末を0.5wt%添加した。次に、こ
うして作製される混合物を必要な数だけ用意し、各々
に、さらなる添加物として、Mg,Al,Si,Ca,
Sc,Ti,V,Cr,Mn,Fe,Co,Ni,Z
n,Sr,Zr,Nb,Mo,Tc,In,Sn,S
b,Te,Cs,La,Ce,Pr,Nd,Hf,T
a,W,Biをそれぞれ0.4wt%添加して混合した
ものをそれぞれ作製した。次に、これらの混合粉をそれ
ぞれ大気中、室温から930℃まで10時間で昇温し、
30時間保持した後、10時間かけて室温まで降温する
ことにより焼成した。この仮焼されたそれぞれの混合粉
をライカイ機により粉砕し、平均粒径を約5μmとし
た。次に、これらそれぞれを外径50mm厚さ20mm
のディスク状にプレス成形して成形体を作製した。(Example 1) After weighing each raw material powder of Y 2 O 3 , BaCO 3 , and CuO so that Y: Ba: Cu = 18: 24: 34, only BaCO 3 and CuO were measured in air at 880 ° C.
For 30 hours to obtain a calcined powder of BaCuO 2 and CuO (molar ratio: BaCuO 2 : CuO = 24: 10). Next, the calcined powder was ground using a pot mill to have an average particle size of about 2 μm, and then Y 2 O 3 having an average particle diameter of about 1 μm and an average particle diameter of about 0.1 μm were weighed in advance.
0.5 wt% of 02 μm Pt powder was added. Next, the required number of the mixture thus prepared is prepared, and each of them is further added with Mg, Al, Si, Ca,
Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Z
n, Sr, Zr, Nb, Mo, Tc, In, Sn, S
b, Te, Cs, La, Ce, Pr, Nd, Hf, T
a, W, and Bi were added and mixed at 0.4 wt%, respectively. Next, these mixed powders were each heated in the air from room temperature to 930 ° C. in 10 hours,
After holding for 30 hours, the temperature was lowered to room temperature over 10 hours, and calcination was performed. Each of the calcined mixed powders was pulverized with a raikai machine to have an average particle size of about 5 μm. Next, each of these was set to an outer diameter of 50 mm and a thickness of 20 mm.
Was pressed into a disk shape to produce a molded body.
【0019】これらそれぞれの成形体をアルミナ基板上
に乗せて、大気中、1130℃で50時間で昇温した
後、30分間保持して半溶融状態にした後、成形体の上
部が低温側となるように上下に5℃/cmの温度勾配が
加わるように成形上の上部温度が約1000℃となるま
で急降温(約10℃/min )し、予め作製しておいたN
dBaCuO系溶融体の種結晶を成長方向がc軸と平行
になるように成形体の上部に接触させ、結晶化が始まる
995℃付近で約60時間温度保持を行なった後、1℃
/hrの速度で900℃まで徐冷し、そこから室温まで
10℃/hで降温することによって結晶化を行なった。
図1は実施例1の焼成温度パターンを示した図である。Each of these compacts was placed on an alumina substrate and heated in the air at 1130 ° C. for 50 hours, and then held for 30 minutes to be in a semi-molten state. The temperature was rapidly lowered (approximately 10 ° C./min) until the upper temperature on molding reached approximately 1000 ° C. so that a temperature gradient of 5 ° C./cm was applied vertically.
The seed crystal of the dBaCuO-based melt is brought into contact with the upper part of the compact so that the growth direction is parallel to the c-axis, and the temperature is maintained at about 995 ° C. for about 60 hours at which crystallization starts, and then 1 ° C.
/ Hr was gradually cooled to 900 ° C., and then cooled to room temperature at 10 ° C./h to perform crystallization.
FIG. 1 is a diagram showing a firing temperature pattern of Example 1.
【0020】結晶化したそれぞれの成形体はガス置換を
行える炉の中に設置される。すなわち、まず、ロータリ
ーポンプで0.1Torrまで炉内を排気した後、酸素ガス
を流し込んで酸素分圧が95%以上である大気圧の雰囲
気にする。その後も0.5L/min の流量で酸素ガスを
炉内に流しながら、室温から450℃まで10時間で昇
温し、450℃から250℃まで200時間かけて徐冷
し、250℃から室温まで10時間で降温させる。Each of the crystallized compacts is placed in a furnace capable of gas replacement. That is, first, the inside of the furnace is evacuated to 0.1 Torr by a rotary pump, and then an oxygen gas is poured into the furnace to obtain an atmosphere at an atmospheric pressure where the oxygen partial pressure is 95% or more. Thereafter, while flowing oxygen gas into the furnace at a flow rate of 0.5 L / min, the temperature was raised from room temperature to 450 ° C. for 10 hours, gradually cooled from 450 ° C. to 250 ° C. over 200 hours, and then cooled from 250 ° C. to room temperature. Let cool in 10 hours.
【0021】得られたそれぞれの材料を切断して断面を
光学顕微鏡で観察したところ、YBa2 Cu3 O7-X 相
中に0.1〜30μmのY2 BaCuO5 相が微細に分
散していた。また、種結晶を反映して材料全体がc軸に
配向し、実質的に単結晶状の材料が得られた。[0021] When a cross section by cutting the respective material obtained was observed with an optical microscope, YBa 2 Cu 3 O 7- X phase 0.1~30μm of Y 2 BaCuO 5 phase in is not finely dispersed Was. In addition, the entire material was oriented along the c-axis reflecting the seed crystal, and a substantially single-crystal material was obtained.
【0022】得られたデイスク状試料から約2×2×
1.5mm程度の単一結晶を切り出し、試料振動型磁力
計によりc軸に平行に磁場を加えて温度77〔K〕にお
いて磁化率の測定を行なった。この磁化率の測定結果か
らBeanモデルを適用して臨界電流密度を求めた。Approximately 2 × 2 ×
A single crystal of about 1.5 mm was cut out, and a magnetic field was applied in parallel to the c-axis by a sample vibration magnetometer to measure the magnetic susceptibility at a temperature of 77 [K]. From the measurement results of the magnetic susceptibility, a critical current density was obtained by applying a Bean model.
【0023】Srを添加した試料と無添加の試料の臨界
電流密度の磁場依存性を図2に示す。 Srを添加した
試料では0〔T〕付近の低磁場では臨界電流密度が低い
が、磁場の増加に対して減衰が少なく、0.2〔T〕以
上では無添加のものより高くなっている。FIG. 2 shows the magnetic field dependence of the critical current density of the sample to which Sr is added and the sample to which Sr is not added. In the sample to which Sr was added, the critical current density was low at a low magnetic field near 0 [T], but the attenuation was small with an increase in the magnetic field, and the value was higher at 0.2 [T] or more than that without the addition.
【0024】またその他の添加元素を添加した試料の外
部磁場1〔T〕における臨界電流密度を図3にそれぞれ
示す。高磁場下においても高い臨界電流密度を示してい
ることがわかる。FIG. 3 shows the critical current densities of the sample to which an additional element was added at an external magnetic field of 1 [T]. It can be seen that a high critical current density is exhibited even under a high magnetic field.
【0025】電流リード、磁気軸受け、磁気シールド、
及びバルクマグネット等の応用の際には試料に実質的に
加わる外部磁場は0.5T以上となる。よって、高磁場
下での臨界電流密度が高められたことで、前記応用技術
の特性値を著しく向上させることが可能となった。Current lead, magnetic bearing, magnetic shield,
In the case of application of a bulk magnet or the like, the external magnetic field substantially applied to the sample is 0.5 T or more. Therefore, the characteristic value of the applied technology can be significantly improved by increasing the critical current density under a high magnetic field.
【0026】(実施例2)Ho2 O3 、BaCO3 、C
uOの各原料粉末をHo:Ba:Cu=18:24:3
4になるように秤量した後、BaCO3 、CuOのみを
大気中、880℃で30時間焼成してBaCuO2 とC
uOの仮焼粉を得た(モル比でBaCuO2 :CuO=
24:10)。次に、この仮焼粉をポットミルを利用し
て粉砕することによって平均粒径を約2μmとした後、
あらかじめ秤量しておいた平均粒径約1μmのHo2 O
3 と平均粒径約0.02μmのPt粉末を0.5wt%
添加した。次に、こうして作製される混合物を必要な数
だけ用意し、各々に、さらなる添加物として、Alを
0.1wt%及びCaを0.3wt%、Srを0.1w
t%及びMgを0.2wt%、Znを0.2wt%及び
Nbを0.3wt%、Inを0.1wt%及びSnを
0.5wt%、Tiを0.3wt%及びLaを0.4w
t%、Ceを0.3wt%及びPr0.3をwt%、N
dを0.1wt%及びBiを0.5wt%、それぞれ添
加して混合したものを作製した。次に、これらの混合粉
をそれぞれ大気中、室温から930℃まで10時間で昇
温し、30時間保持した後、10時間かけて室温まで降
温することにより焼成した。これら仮焼されたそれぞれ
の混合粉をライカイ機により粉砕し、平均粒径を約5μ
mとした。次に、これらをそれぞれ外径50mm厚さ2
0mmのディスク状にプレス成形して成形体を作製し
た。(Example 2) Ho 2 O 3 , BaCO 3 , C
Each raw material powder of uO was prepared using Ho: Ba: Cu = 18: 24: 3.
After weighing so as to be 4, only BaCO 3 and CuO are calcined at 880 ° C. for 30 hours in the air, and BaCuO 2 and C
A calcined powder of uO was obtained (in molar ratio, BaCuO 2 : CuO =
24:10). Next, the calcined powder was pulverized using a pot mill to make the average particle size about 2 μm.
Pre-weighed Ho 2 O with average particle size of about 1 μm
3 and 0.5wt% of Pt powder with average particle size of about 0.02μm
Was added. Next, a required number of the mixtures thus prepared are prepared, and as further additives, 0.1 wt% of Al, 0.3 wt% of Ca, and 0.1 w
0.2% by weight of t% and Mg, 0.2% by weight of Zn and 0.3% by weight of Nb, 0.1% by weight of In and 0.5% by weight of Sn, 0.3% by weight of Ti and 0.4% by weight of La
t%, Ce 0.3 wt%, Pr0.3 wt%, N
0.1 wt% of d and 0.5 wt% of Bi were added to each other and mixed. Next, each of these mixed powders was heated in the air from room temperature to 930 ° C. for 10 hours, held for 30 hours, and then fired by cooling to room temperature over 10 hours. Each of the calcined mixed powders is pulverized by a raikai machine to have an average particle size of about 5 μm.
m. Next, each of them was made to have an outer diameter of 50 mm and a thickness of 2 mm.
A compact was produced by press molding into a 0 mm disk shape.
【0027】こうして作製したそれぞれの成形体をアル
ミナ基板上に乗せて、大気中、1130℃で半溶融状態
にした後、成形体の上部が低温側となるように上下に5
℃/cmの温度勾配が加わるように成形体の上部温度が約
1000℃となるまで急降温(約10℃/min )し、予
め作製しておいたNdBaCuO系溶融体の種結晶を成
長方向がc 軸と平行になるように成形体の上部に接触さ
せ結晶化が始まる995℃付近で約60時間温度保持を
行なった後、1℃/hrの速度で900℃まで徐冷し、
そこから室温まで10℃/hで降温することによって結
晶化を行なった。Each of the compacts thus prepared was placed on an alumina substrate and brought into a semi-molten state at 1130 ° C. in the air, and then vertically moved so that the upper portion of the compact was on the low temperature side.
Then, the temperature of the green body was rapidly lowered (approximately 10 ° C./min) until the upper temperature of the molded body reached approximately 1000 ° C. so that a temperature gradient of approximately 90 ° C./cm was applied. After contacting with the upper part of the compact so as to be parallel to the c-axis and keeping the temperature at around 995 ° C. where crystallization starts for about 60 hours, it is gradually cooled to 900 ° C. at a rate of 1 ° C./hr,
Then, the temperature was lowered to room temperature at 10 ° C./h to perform crystallization.
【0028】これら結晶化した成形体をガス置換を行え
る炉の中に設置した。すなわち、まず、ロータリーボン
プで0.1Torrまで炉内を排気した後、酸素ガスを流し
込んで酸素分圧が95%以上である大気圧の雰囲気にす
る。その後も0.5L/minの流量で酸素ガスを炉内に
流しながら、室温から450℃まで10時間で昇温し、
450℃から250℃まで200時間かけて徐冷し、2
50℃から室温まで10時間で降温させる。These crystallized compacts were placed in a furnace capable of gas replacement. That is, first, the inside of the furnace is evacuated to 0.1 Torr by a rotary pump, and then an oxygen gas is poured into the furnace to obtain an atmosphere at an atmospheric pressure where the oxygen partial pressure is 95% or more. Thereafter, the temperature was raised from room temperature to 450 ° C. for 10 hours while flowing oxygen gas into the furnace at a flow rate of 0.5 L / min.
Slowly cool from 450 ° C to 250 ° C over 200 hours,
The temperature is lowered from 50 ° C. to room temperature in 10 hours.
【0029】こうして得られたそれぞれの材料を切断し
て断面を光学顕微鏡で観察したところ、YBa2 Cu3
O7- X相中に0.1〜30μmのY2 BaCuO5 相が
微細に分散していた。また、種結晶を反映して材料全体
がc軸に配向し、実質的に単結晶状の材料が得られた。Each material obtained in this manner was cut, and its cross section was observed with an optical microscope. As a result, YBa 2 Cu 3
O 7- X phase in the 0.1 to 30 [mu] m Y 2 BaCuO 5 phase were dispersed finely. In addition, the entire material was oriented along the c-axis reflecting the seed crystal, and a substantially single-crystal material was obtained.
【0030】得られたディスク状試料から約2×2×
1.5mm程度の単一結晶を切り出し、試料振動型磁力計
によりc軸に平行に磁場を加えて温度77〔K〕におい
て磁化率の測定を行なった。この磁化率の測定結果から
Beanモデルを適用して臨界電流密度を求めた。Approximately 2 × 2 ×
A single crystal of about 1.5 mm was cut out, and a magnetic field was applied parallel to the c-axis by a sample vibration magnetometer to measure the magnetic susceptibility at a temperature of 77 [K]. From the measurement results of the magnetic susceptibility, a critical current density was obtained by applying a Bean model.
【0031】外部磁場1〔T〕における臨界電流密度を
図4にそれぞれ示す。高磁場下においても高い臨界電流
密度を示していた。FIG. 4 shows the critical current densities at an external magnetic field of 1 [T]. It showed a high critical current density even under a high magnetic field.
【0032】(実施例3)Y2 O3 、BaCO3 、Cu
Oの各原料粉末をY:Ba:Cu=18:24:34に
なるように秤量混合した後、Pt坩堝中で、大気中、1
400℃で30分間溶融して、銅板に流し込み急冷し
た。こうして得られる凝固物を必要な数だけ作製し、各
々に、Mg,Al,Ca,Zn,Sr,Zr,Nb,S
n,Sb,La,Ce,Bi,をそれぞれ0.1wt%
添加し、それぞれをポットミルを使用して粉砕及び混合
することによって平均粒径を約2μmとした。次に、こ
れらを外径50mm厚さ20mmのディスク状にそれぞ
れプレス成形して成形体を作製した。Example 3 Y 2 O 3 , BaCO 3 , Cu
Each raw material powder of O is weighed and mixed so that Y: Ba: Cu = 18: 24: 34, and then put in a Pt crucible in the air.
It was melted at 400 ° C. for 30 minutes, poured into a copper plate and rapidly cooled. A required number of the solidified products thus obtained are prepared, and each of them is made of Mg, Al, Ca, Zn, Sr, Zr, Nb, S
0.1 wt% each of n, Sb, La, Ce, Bi
The mixture was added, and each was ground and mixed using a pot mill to make the average particle size about 2 μm. Next, these were each press-molded into a disk shape having an outer diameter of 50 mm and a thickness of 20 mm to produce a molded body.
【0033】これら成形体をそれぞれアルミナ基板上に
乗せて、大気中、1130℃で半溶融状態にした 後、
成形体の上部が低温側となるように上下に5℃/cmの温
度勾配が加わるように成形体の上部温度が1000℃と
なるまで急降温(約10℃/min )し、予め作製してお
いたNdBaCuO系溶融体の種結晶を成長方向がc軸
と平行になるように成形体の上部に接触させ結晶化が始
まる995℃付近で約60時間温度保持を行なった後、
1℃/hrの速度で900℃まで徐冷し、そこから室温
まで10℃/h で降温することによって結晶化を行なっ
た。Each of these compacts was placed on an alumina substrate and brought into a semi-molten state at 1130 ° C. in the air.
The temperature of the upper part of the molded body is rapidly lowered (about 10 ° C./min) until the upper part temperature of the molded body becomes 1000 ° C. so that a temperature gradient of 5 ° C./cm is applied vertically so that the upper part of the molded body is on the low temperature side. After the seed crystal of the NdBaCuO-based melt placed is brought into contact with the upper part of the compact so that the growth direction is parallel to the c-axis, and the temperature is maintained at about 995 ° C. for about 60 hours, at which crystallization starts,
Crystallization was performed by gradually cooling to 900 ° C. at a rate of 1 ° C./hr and then cooling to room temperature at 10 ° C./hr.
【0034】結晶化した成形体をガス置換が行える炉の
中に設置した。すなわち、まず、ロータリーポンプで
0.1Torrまで炉内を排気した後、酸素ガスを流し込ん
で酸素分圧が95%である大気圧の雰囲気にする。その
後も0.5L/min の流量で酸素ガスを炉内に流しなが
ら、室温から450℃まで10時間で昇温し、450℃
から250℃まで200時間かけて徐冷し、250℃か
ら室温まで10時間で降温させる。The crystallized compact was placed in a furnace capable of gas replacement. That is, first, the inside of the furnace is evacuated to 0.1 Torr by a rotary pump, and then an oxygen gas is poured into the furnace to make an atmosphere having an oxygen partial pressure of 95% at atmospheric pressure. Thereafter, while flowing oxygen gas into the furnace at a flow rate of 0.5 L / min, the temperature was raised from room temperature to 450 ° C. in 10 hours.
From 250 ° C to room temperature in 10 hours.
【0035】得られた材料を切断して断面を光学顕微鏡
で観察したところ、YBa2 Cu3O7- X相中に0.1
〜30μmのY2 BaCuO5 相が微細に分散してた。
また、種結晶を反映して材料全体がc軸に配向し、実質
的に単結晶状の材料が得られた。When the obtained material was cut and its cross section was observed with an optical microscope, it was found that 0.1% was contained in the YBa 2 Cu 3 O 7-X phase.
Y 2 BaCuO 5 phase ~30μm were dispersed finely.
In addition, the entire material was oriented along the c-axis reflecting the seed crystal, and a substantially single-crystal material was obtained.
【0036】得られたディスク状試料から約2×2×
1.5mm程度の単一結晶を切り出し、試料振動型磁力計
によりc軸に平行に磁場を加えて温度77〔K〕におい
て磁化率の測定を行なった。この磁化率の測定結果から
Beanモデルを適用して臨界電流密度を求めた。Approximately 2 × 2 ×
A single crystal of about 1.5 mm was cut out, and a magnetic field was applied parallel to the c-axis by a sample vibration magnetometer to measure the magnetic susceptibility at a temperature of 77 [K]. From the measurement results of the magnetic susceptibility, a critical current density was obtained by applying a Bean model.
【0037】外部磁場1〔T〕における限界電流密度を
図5にそれぞれ示す。高磁場下においても高い臨界電流
密度を示していた。FIG. 5 shows the limiting current density at an external magnetic field of 1 [T]. It showed a high critical current density even under a high magnetic field.
【0038】(比較例1)Y2 O3 、BaCO3 、Cu
Oの各原料粉末をY:Ba:Cu=18:24:34に
なるように秤量した後、BaCO3 、CuOのみを大気
中、880℃で30時間焼成してBaCuO2 とCuO
の仮焼粉を得た(モル比でBaCuO2 :CuO=2
4:10)。次に、この仮焼粉をポットミルを使用して
粉砕することによって平均粒径を約2μmとした後、あ
らかじめ秤量しておいた平均粒径約1μmのY2 O3 と
平均粒径約0.02μmのPt粉末を0.5wt%添加
し混合する。次に、この混合紛を大気中、室温から93
0℃まで10時間で昇温し、30時間保持した後、10
時間かけて室温まで降温することにより焼成した。この
仮焼された混合紛をライカイ機により粉砕し平均粒径を
約5μmとした。次に、これを外径50mm厚さ20mm
のディスク状にプレス成形して成形体を作製した。Comparative Example 1 Y 2 O 3 , BaCO 3 , Cu
After weighing each raw material powder of O so that Y: Ba: Cu = 18: 24: 34, only BaCO 3 and CuO are fired at 880 ° C. for 30 hours in the air to obtain BaCuO 2 and CuO.
(A molar ratio of BaCuO 2 : CuO = 2) was obtained.
4:10). Next, the calcined powder was ground using a pot mill to have an average particle size of about 2 μm, and then Y 2 O 3 having an average particle diameter of about 1 μm and an average particle diameter of about 0.1 μm were weighed in advance. 0.5 wt% of 02 μm Pt powder is added and mixed. Next, the mixed powder was removed from the room temperature to 93
The temperature was raised to 0 ° C. in 10 hours, and maintained for 30 hours.
Calcination was performed by lowering the temperature to room temperature over time. The calcined mixed powder was pulverized with a raikai machine to have an average particle size of about 5 μm. Next, this is 50 mm in outer diameter and 20 mm in thickness.
Was pressed into a disk shape to produce a molded body.
【0039】この成形体をアルミナ基板に乗せて、大気
中、1130℃で半溶融状態にした後、成形体の上部が
低温側となるように上下に5℃/cmの温度勾配が加わる
ように成 形体の上部温度が約1000℃となるまで急
降温(約10℃/min )し、予め作製しておいたNdB
aCuO系溶融体の種結晶を成長方向がc 軸と平行にな
るように成形体の上部に接触させ結晶化が始まる995
℃付近で約60時間温度保持を行なった後、1℃/hr
の速度で900℃まで徐冷し、そこから室温まで10℃
/hで降温することによって結晶化を行なった。After placing the compact on an alumina substrate and making it in a semi-molten state at 1130 ° C. in the air, a temperature gradient of 5 ° C./cm is applied up and down so that the upper portion of the compact is on the low temperature side. The temperature was rapidly lowered (approximately 10 ° C./min) until the upper temperature of the molded body reached approximately 1000 ° C.
The seed crystal of the aCuO-based melt is brought into contact with the upper part of the compact so that the growth direction is parallel to the c-axis, and crystallization starts 995.
After maintaining the temperature at about 60 ° C for about 60 hours, 1 ° C / hr
Slowly cool to 900 ° C at a speed of 10 ° C to room temperature
Crystallization was performed by lowering the temperature at / h.
【0040】結晶化した成形体をガス置換が行える炉の
中に設置した。すなわち、まず、ロータリーポンプで
0.1Torrまで炉内を排気した後、酸素ガスを流し込ん
で酸素分圧が95%以上である大気圧の雰囲気にする。
その後も0.5L/min の流量で酸素ガスを炉内に流し
ながら、室温から450℃まで10時間で昇温し、45
0℃から250℃まで200時間かけて徐冷し、250
℃から室温まで10時間かけて降温させる。The crystallized molded body was placed in a furnace capable of gas replacement. That is, first, the inside of the furnace is evacuated to 0.1 Torr by a rotary pump, and then an oxygen gas is poured into the furnace to obtain an atmosphere at an atmospheric pressure where the oxygen partial pressure is 95% or more.
Thereafter, while flowing oxygen gas at a flow rate of 0.5 L / min into the furnace, the temperature was raised from room temperature to 450 ° C. in 10 hours, and 45 ° C.
Cool slowly from 0 ° C to 250 ° C over 200 hours.
Let the temperature drop from ℃ to room temperature over 10 hours.
【0041】得られた材料を切断して断面を光学顕微鏡
で観察したところ、YBa2 Cu3O7- X相中に0.1
〜30μmのY2 BaCuO5 相が微細に分散してい
た。また、種結晶を反映して材料全体がc軸に配向し、
実質的に単結晶状の材料が得られた。When the obtained material was cut and its cross section was observed with an optical microscope, it was found that the material contained 0.1% in the YBa 2 Cu 3 O 7 -X phase.
Y 2 BaCuO 5 phase ~30μm were dispersed finely. Also, the entire material is oriented along the c-axis reflecting the seed crystal,
A substantially single crystalline material was obtained.
【0042】得られたディスク状試料から約2×2×
1.5mm程度の単一結晶を切り出し、試料振動型磁力計
によりc軸に平行に磁場を加えて温度77〔K〕におい
て磁化率の測定を行なった。この磁化率の測定結果から
Beanモデルを適用して臨界電流密 度を求めた。Approximately 2 × 2 ×
A single crystal of about 1.5 mm was cut out, and a magnetic field was applied parallel to the c-axis by a sample vibration magnetometer to measure the magnetic susceptibility at a temperature of 77 [K]. From the measurement results of the magnetic susceptibility, the critical current density was determined by applying the Bean model.
【0043】臨界電流密度の磁場依存性をSrを添加し
た試料と共に図2に示す。磁場に対して減衰が大きく、
高磁場下においては臨界電流密度が低かった。FIG. 2 shows the magnetic field dependence of the critical current density together with the sample to which Sr was added. The attenuation is large with respect to the magnetic field,
Under high magnetic field, the critical current density was low.
【0044】なお、上述した実施例では、REとして
Y、Hoをそれぞれの例として示したが、REとして
は、Y,Sm,Eu,Gd,Tb,Dy,Ho,Er,
Tm,Yb,Luから選ばれる1種ないし2種以上の元
素を用いても同様な効果が得られることを確認してい
る。In the above-described embodiment, Y and Ho are shown as examples of RE, respectively. However, as RE, Y, Sm, Eu, Gd, Tb, Dy, Ho, Er,
It has been confirmed that similar effects can be obtained by using one or more elements selected from Tm, Yb, and Lu.
【0045】[0045]
【発明の効果】以上詳述したように、本発明は、酸化物
超電導体の製造方法の一つであるいわゆる溶融法を用い
てREーBaーCuーO系超電導体(REはY,Sm,
Eu,Gd,Tb,Dy,Ho,Er,Tm,Yb,L
uから選ばれる1種又は2種以上の希土類元素)を製造
する際に、Mg,Al,Si,Ca,Sc,Ti,V,
Cr,Mn,Fe,Co,Ni,Zn,Sr,Zr,N
b,Mo,Tc,In,Sn,Sb,Te,Cs,L
a,Ce,Pr,Nd,Hf,Ta,W,Bi,の何れ
か1種ないし2種以上の元素を0.05wt%〜1wt
%添加することで、高磁場下でも臨界電流密度を示す酸
化物超電導体の製造を可能としたものである。As described above in detail, the present invention provides an RE-Ba-Cu-O-based superconductor (RE is Y, Sm ,
Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, L
u, one or more rare earth elements selected from the group consisting of Mg, Al, Si, Ca, Sc, Ti, V,
Cr, Mn, Fe, Co, Ni, Zn, Sr, Zr, N
b, Mo, Tc, In, Sn, Sb, Te, Cs, L
a, Ce, Pr, Nd, Hf, Ta, W, Bi, at least one element of 0.05 wt% to 1 wt%
The addition of% makes it possible to produce an oxide superconductor exhibiting a critical current density even under a high magnetic field.
【図1】実施例1の溶融結晶化の温度パターン模式図で
ある。FIG. 1 is a schematic diagram of a temperature pattern of melt crystallization in Example 1.
【図2】実施例1のSrを添加した試料と比較例1で作
製した材料の温度77〔K〕における臨界電流密度の磁
場依存性を測定した結果を示す図である。FIG. 2 is a view showing the results of measuring the magnetic field dependence of the critical current density at a temperature of 77 [K] of the sample to which Sr was added in Example 1 and the material produced in Comparative Example 1.
【図3】実施例1で製造した材料の温度77〔K〕外部
磁場1〔T〕における臨界電流密度を測定した結果を示
す図である。FIG. 3 is a view showing a result of measuring a critical current density of the material manufactured in Example 1 at a temperature of 77 [K] and an external magnetic field of 1 [T].
【図4】実施例2で製造した材料の温度77〔K〕外部
磁場1〔T〕における臨界電流密度を測定した結果を示
す図である。FIG. 4 is a view showing a result of measuring a critical current density of a material manufactured in Example 2 at a temperature of 77 [K] and an external magnetic field of 1 [T].
【図5】実施例3で製造した材料の温度77〔K〕外部
磁場1〔T〕における臨界電流密度を測定した結果を示
す図である。FIG. 5 is a view showing a result of measuring a critical current density of a material manufactured in Example 3 at a temperature of 77 [K] and an external magnetic field of 1 [T].
Claims (6)
Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Y
b,Luから選ばれる1種又は2種以上の希土類元素)
中にRE2 BaCuO5 相が微細に分散した酸化物超電
導体において、Mg,Al,Si,Ca,Sc,Ti,
V,Cr,Mn,Fe,Co,Ni,Zn,Sr,Z
r,Nb,Mo,Tc,In,Sn,Sb,Tc,C
s,La,Ce,Pr,Nd,Hf,Ta,W,Biの
何れか1種ないし2種以上の元素が0.05wt%〜1
wt%含まれることを特徴とする酸化物超電導体。1. The REBa 2 Cu 3 O 7-X phase (RE is Y,
Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Y
b, one or more rare earth elements selected from Lu)
In an oxide superconductor in which an RE 2 BaCuO 5 phase is finely dispersed, Mg, Al, Si, Ca, Sc, Ti,
V, Cr, Mn, Fe, Co, Ni, Zn, Sr, Z
r, Nb, Mo, Tc, In, Sn, Sb, Tc, C
at least one element selected from the group consisting of s, La, Ce, Pr, Nd, Hf, Ta, W, and Bi is 0.05 wt% to 1 wt.
An oxide superconductor characterized in that the oxide superconductor is contained by wt%.
て、Pt、Pd、Ru、Rh,Ir、Os、Reの各金
属又はこれら金属の化合物の1種又は2種以上を0.0
5〜5wt%(但し、化合物の場合は、その化合物に含
有される前記金属の量で示す)含むことを特徴とする酸
化物超電導体。2. The oxide superconductor according to claim 1, wherein one or more of the metals Pt, Pd, Ru, Rh, Ir, Os, and Re, or a compound of these metals, is used in an amount of 0.0%.
An oxide superconductor comprising 5 to 5 wt% (in the case of a compound, the amount is indicated by the amount of the metal contained in the compound).
において、Agを1〜30wt%含むことを特徴とする
酸化物超電導体。3. The oxide superconductor according to claim 1, comprising 1 to 30% by weight of Ag.
d,Tb,Dy,Ho,Er,Tm,Yb,Luから選
ばれる1種又は2種以上の希土類元素)、Ba化合物及
びCu化合物を含む原料混合体に、少なくとも該原料混
合体の融点より高い温度領域における焼成工程を含む処
理を施してREーBaーCuーO系酸化物超電導体を製
造する酸化物超電導体の製造方法において、 Mg,Al,Si,Ca,Sc,Ti,V,Cr,M
n,Fe,Co,Ni,Zn,Sr,Zr,Nb,M
o,Tc,In,Sn,Sb,Tc,Cs,La,C
e,Pr,Nd,Hf,Ta,W,Biの何れか1種な
いし2種以上の元素を0.05wt%〜1wt%(但
し、化合物の場合は、その化合物に含有される前記金属
の量で示す)添加することを特徴とする酸化物超電導体
の製造方法。4. An RE compound (RE is Y, Sm, Eu, G
d, Tb, Dy, Ho, Er, Tm, Yb, Lu, at least one or more rare earth elements), a Ba compound and a Cu compound, at least higher than the melting point of the raw material mixture. A method for producing an RE-Ba-Cu-O-based oxide superconductor by performing a treatment including a firing step in a temperature region, comprising: Mg, Al, Si, Ca, Sc, Ti, V, Cr , M
n, Fe, Co, Ni, Zn, Sr, Zr, Nb, M
o, Tc, In, Sn, Sb, Tc, Cs, La, C
e, Pr, Nd, Hf, Ta, W, and Bi in an amount of 0.05 wt% to 1 wt% (in the case of a compound, the amount of the metal contained in the compound is 0.05 wt% to 1 wt%). A method for producing an oxide superconductor.
方法において、 前記原料混合体に、さらに、Pt、Pd、Ru、Rh、
Ir、Os、Reの各金属又は各化合物の1種又は2種
以上を0.05〜5wt%添加することを特徴とする酸
化物超電導体の製造方法。5. The method for producing an oxide superconductor according to claim 4, wherein the raw material mixture further comprises Pt, Pd, Ru, Rh,
A method for producing an oxide superconductor, comprising adding 0.05 to 5 wt% of one or more of each metal or each compound of Ir, Os, and Re.
の製造方法において、 前記原料混合体に、さらに、Agを1〜30wt%添加
することを特徴とする酸化物超電導体の製造方法。6. The method for manufacturing an oxide superconductor according to claim 4, wherein Ag is further added to the raw material mixture in an amount of 1 to 30% by weight. .
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