JPH11121702A - Thin film material and method for manufacturing the same, and dielectric capacitor and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thin film material suitable for use as a material of a lower electrode of a dielectric capacitor, a method of manufacturing the same, a dielectric capacitor using such a thin film material as a material of a lower electrode, and a method of manufacturing the same. provide. SOLUTION: As a material of a lower electrode of a dielectric capacitor, a composition formula Pd _a (Rh _100-xyz Pt _x Ir _y R) is used.
u _z ) _b O _c (where a, b, c, x, y, and z are compositions expressed in atomic%), and the composition range is 20 ≦ a ≦
70, 10 ≦ b ≦ 40, 15 ≦ c ≦ 60, a + b + c =
100, 0 ≦ x <100, 0 ≦ y <100, 0 ≦ z <1
00, the first made of a material satisfying 0 ≦ x + y + z <100
And a composition formula Ir _p Pt _{q R r} (where p, q, and r are compositions expressed in atomic%) having a composition range of 0 ≦ p ≦ 100 and 0 ≦ q. ≦ 100, 0 ≦ r
≦ 100, a second made of a material with p + q + r = 100
Is used. The thickness t of the second thin film 3 is set to 3 nm ≦ t ≦ 300 nm. A dielectric film 4 is formed on the lower electrode by a CVD method.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film material and a method for manufacturing the same, and a dielectric capacitor and a method for manufacturing the same, and is particularly suitable for application to a ferroelectric nonvolatile memory and other semiconductor memories.

[0002]

2. Description of the Related Art As an electrode material of a dielectric capacitor used for a semiconductor memory, in order to prevent an oxide layer having a high electric resistance value from being formed at an interface between a dielectric film and an electrode,
It has been proposed to use a metal belonging to the platinum group which is hardly oxidized, or a material such as RuO ₂ or LaSrCoO ₃ which maintains conductivity even when oxidized. However, when forming a dielectric film, it is usually necessary to perform a heat treatment at a high temperature of 600 to 800 ° C., and at the time of the heat treatment, a deteriorated layer due to diffusion is formed at an interface between the dielectric film and the electrode. In the case of generated or stacked dielectric capacitor cells,
There has been a problem that the inter-diffusion at the interface between the Si plug electrode and the lower electrode and the oxidation of the surface of the Si plug electrode cause abnormal increase in contact resistance at the interface.

In order to solve this problem, the present applicant has disclosed in Japanese Patent Application No. 9-110830 the composition formula Pd _a (Rh
_{100-xyz Pt x Ir y Ru} z) b O c ( however, a,
b, c, x, y, and z are compositions represented by atomic%)
The composition range is 20 ≦ a ≦ 70, 10 ≦ b ≦ 40, 15
≦ c ≦ 60, a + b + c = 100, 0 ≦ x <100, 0
≦ y <100, 0 ≦ z <100, 0 ≦ x + y + z <10
0 is a material or composition formula Pd _a Rh _b O _c (however, a, b, c are the composition, expressed in atomic%) is represented by a compositional range 20 ≦ a ≦ 70,10 ≦ b ≦ 40 , 15 ≦
It was proposed to use a material in which c ≦ 60 and a + b + c = 100 as the electrode material. If these materials are used for the material of the lower electrode, a thin film having a composition close to the stoichiometric composition of SrBi ₂ Ta ₂ O ₉ (SBT) is formed on the lower electrode by spin coating or sputtering, and this is formed, for example, by 8
An SBT film exhibiting good ferroelectric characteristics can be obtained by performing a heat treatment at 00 ° C. for 1 hour in an oxygen atmosphere. Also, the _{Pd a (Rh 100-xyz Pt} x Ir y Ru z) b O c
Alternatively, Pd _a Rh _b O _c has a higher etching rate by a reactive plasma etching method than Pt or Ir and is excellent in workability, so that a three-dimensional structure capacitor indispensable for a large capacity semiconductor memory is formed. In this case, great advantages can be obtained.

[0004]

By the way, if the chemical vapor deposition (CVD) method can be used to form the dielectric film, high productivity can be obtained and good step coverage can be obtained. ,desirable. However, an SBT film, a Pb (Zr, Ti) O ₃ (PZT) film, or the like is formed on _a Pd _a (Rh _100-xyz Pt _x Ir) by _a CVD method.
When _y Ru _{z) b} O _c film or Pd _a Rh _b O _c deposited on the membrane, only Bi and Pb is poor film give only the abnormally precipitated surface to the surface.

Accordingly, an object of the present invention is to provide a Pd
In the case of forming by _{a (Rh 100-xyz Pt x} Ir y Ru z) b O c film or Pd _a Rh _b O _c chemical vapor deposition dielectric film such as SBT film or PZT film on the membrane, It is an object of the present invention to provide a thin film material capable of obtaining a dielectric film having good surface properties and a method of manufacturing the same, and a dielectric capacitor using such a thin film material as a material of a lower electrode and a method of manufacturing the same.

[0006]

Means for Solving the Problems The present inventor has made intensive studies to solve the above-mentioned problems of the prior art. The outline is described below.

As described above, Pd _a (Rh _100-xyz P
When _{t x Ir y Ru z) b} O c film or Pd _a Rh _b O _c on the membrane and SBT film or PZT film directly deposited by CVD, but only obtained a surface having poor film, the present inventors According to the results of various experiments, Pd _a (Rh
_{100-xyz Pt x Ir y Ru} z) b O c film or Pd _a
Rh _b O _c on the membrane Ir _p Pt _q Ru _r film (where, p,
q and r are compositions expressed in atomic%, 0 ≦ p ≦ 100, 0 ≦ q
≦ 100,0 ≦ r ≦ 100, p + q + r = 100) or Ir _p Pt _q Ru _r O _s film (where, p, q, r, s
Is a composition represented by atomic%, 0 ≦ p ≦ 90, 0 ≦ q ≦ 90,
0 ≦ r ≦ 90, 0 ≦ s ≦ 10, p + q + r + s = 10
0) is provided, and an SBT film or PZT
When a film or the like is formed, a film having good surface properties can be obtained. In addition, these Pd _a (Rh _{100 -xyz} P
Both _{t x Ir y Ru z) b} O c film and Pd _a Rh _b O _c film by depositing by reactive sputtering using oxygen gas, can be obtained of good quality. Therefore, if this laminated film is used as the material of the lower electrode of the dielectric capacitor, the above-described problem of the related art can be solved. Furthermore, these Pd _a (R
_{h 100-xyz Pt x Ir y} Ru z) b O c film, Pd _a R
h _b O _c film, Ir _p Pt _q Ru _r film and Ir _p Pt _q
The Ru _r O _s film can be easily processed by a reactive plasma etching method or the like, which is convenient for the production of a dielectric capacitor, and a stacked dielectric capacitor suitable for miniaturization of a memory cell. Thus, a pedestal-type dielectric capacitor capable of further miniaturizing the size of a memory cell can be realized. The present invention
It was devised based on the above examination.

That is, in order to achieve the above object, a thin film material according to the first invention of the present invention has a composition formula of Pd
_a (Rh _100-xyz Pt _x Ir _y Ru _z ) _b O _c (where a, b, c, x, y, and z are compositions expressed in atomic%), and the composition range is 20 ≦ a ≦ 70, 10 ≦ b ≦ 4
0, 15 ≦ c ≦ 60, a + b + c = 100, 0 ≦ x <1
00, 0 ≦ y <100, 0 ≦ z <100, 0 ≦ x + y +
first a thin film of a first material which is z <100, the first thin film, the composition formula Ir _p Pt _q Ru _r (where
p, q, and r are compositions represented by atomic%), and their composition ranges are 0 ≦ p ≦ 100, 0 ≦ q ≦ 100, 0 ≦ r ≦ 10
0, a second material made of a second material with p + q + r = 100
And a thin film of

[0009] The thin film material according to the second invention of the present invention comprises:
Composition formula _{Pd a (Rh 100-xyz Pt} x Ir y Ru z) b
O _c (where a, b, c, x, y, and z are compositions expressed in atomic%), and the composition range is 20 ≦ a ≦ 70, 1
0 ≦ b ≦ 40, 15 ≦ c ≦ 60, a + b + c = 100,
0 ≦ x <100, 0 ≦ y <100, 0 ≦ z <100, 0
First a thin film consisting ≦ x + y + z <first material 100, the first thin film, the composition formula Ir _p Pt _q Ru _r O
_s (where p, q, r, and s are compositions expressed in atomic%), and the composition range is 0 ≦ p ≦ 90, 0 ≦ q ≦ 90,
0 ≦ r ≦ 90, 0 ≦ s ≦ 10, p + q + r + s = 100
And a second thin film made of a second material.

[0010] The thin film material according to a third aspect of the present invention comprises:
Formula Pd _a Rh _b O _c (however, a, b, c are atomic%
And the composition range is 20 ≦ a ≦ 7.
0, 10 ≦ b ≦ 40, 15 ≦ c ≦ 60, a + b + c = 1
00 first and a thin film made of a first material which is, in the first thin film, the composition formula Ir _p Pt _q Ru _r (however, p, q,
r is a composition expressed in atomic%), and the composition range is 0.
≦ p ≦ 100, 0 ≦ q ≦ 100, 0 ≦ r ≦ 100, p +
and a second thin film made of a second material in which q + r = 100.

[0011] A thin film material according to a fourth aspect of the present invention is:
Formula Pd _a Rh _b O _c (however, a, b, c are atomic%
And the composition range is 20 ≦ a ≦ 7.
0, 10 ≦ b ≦ 40, 15 ≦ c ≦ 60, a + b + c = 1
00 first and a thin film made of a first material which is, in the first thin film, the composition formula _{Ir p Pt q Ru r O s} ( although, p,
q, r, and s are compositions represented by atomic%), and the composition ranges are 0 ≦ p ≦ 90, 0 ≦ q ≦ 90, 0 ≦ r ≦ 90, 0
.Ltoreq.s.ltoreq.10, and a second thin film made of a second material satisfying p + q + r + s = 100.

A fifth aspect of the present invention is directed to the composition formula Pd
_a (Rh _100-xyz Pt _x Ir _y Ru _z ) _b O _c (where a, b, c, x, y, and z are compositions expressed in atomic%), and the composition range is 20 ≦ a ≦ 70, 10 ≦ b ≦ 4
0, 15 ≦ c ≦ 60, a + b + c = 100, 0 ≦ x <1
00, 0 ≦ y <100, 0 ≦ z <100, 0 ≦ x + y +
first a thin film of a first material which is z <100, the first thin film, the composition formula Ir _p Pt _q Ru _r (where
p, q, and r are compositions represented by atomic%), and their composition ranges are 0 ≦ p ≦ 100, 0 ≦ q ≦ 100, 0 ≦ r ≦ 10
0, a second material made of a second material with p + q + r = 100
Wherein the first thin film is formed by a reactive sputtering method using oxygen gas.

A sixth aspect of the present invention is directed to a composition of the present invention comprising a composition formula Pd
_a (Rh _100-xyz Pt _x Ir _y Ru _z ) _b O _c (where a, b, c, x, y, and z are compositions expressed in atomic%), and the composition range is 20 ≦ a ≦ 70, 10 ≦ b ≦ 4
0, 15 ≦ c ≦ 60, a + b + c = 100, 0 ≦ x <1
00, 0 ≦ y <100, 0 ≦ z <100, 0 ≦ x + y +
a first thin film made of a first material in which z <100, and a composition formula Ir _p Pt _{q R UR} O _s on the first thin film (where p, q, r, and s are represented by atomic%. Composition)
The composition range is 0 ≦ p ≦ 90, 0 ≦ q ≦ 90, 0 ≦ r ≦
90, 0 ≦ s ≦ 10 and p + q + r + s = 100. A method of manufacturing a thin film material comprising a second thin film of a second material, wherein the first thin film is formed by a reactive sputtering method using oxygen gas. It is characterized in that it is formed.

A seventh aspect of the present invention provides a composition comprising a composition formula Pd _a R
h _b O _c (where a composition, expressed a, b, c are in atomic%)
And the composition range is 20 ≦ a ≦ 70, 10 ≦ b ≦
40, 15 ≦ c ≦ 60, the first of which is a + b + c = 100
A first thin film made of the material, the first thin film, the composition formula Ir _p Pt _q Ru _r (however, p, q, r composition expressed in atomic%) is represented by a compositional range 0 ≦ p ≦ 100,
0 ≦ q ≦ 100, 0 ≦ r ≦ 100, p + q + r = 100
A method of manufacturing a thin film material comprising a second thin film made of a second material, wherein the first thin film is formed by a reactive sputtering method using oxygen gas. It is.

An eighth aspect of the present invention is directed to _a composition of formula Pd _a R
h _b O _c (where a composition, expressed a, b, c are in atomic%)
And the composition range is 20 ≦ a ≦ 70, 10 ≦ b ≦
40, 15 ≦ c ≦ 60, the first of which is a + b + c = 100
A first thin film made of the material, the first thin film, the composition formula _{Ir p Pt q Ru r O s} ( although, p, q, r, s composition expressed in atomic%) is represented by its Composition range 0 ≦ p ≦
90, 0 ≦ q ≦ 90, 0 ≦ r ≦ 90, 0 ≦ s ≦ 10, p
A method for producing a thin film material comprising: a second thin film of a second material wherein + q + r + s = 100, wherein the first thin film is formed by a reactive sputtering method using oxygen gas. It is assumed that.

According to a ninth aspect of the present invention, there is provided a dielectric capacitor having a composition formula of Pd _a (Rh _100-xyz Pt _x Ir _y R
u _z ) _b O _c (where a, b, c, x, y, and z are compositions expressed in atomic%), and the composition range is 20 ≦ a ≦
70, 10 ≦ b ≦ 40, 15 ≦ c ≦ 60, a + b + c =
100, 0 ≦ x <100, 0 ≦ y <100, 0 ≦ z <1
00, a first thin film made of a first material satisfying 0 ≦ x + y + z <100, and a composition formula Ir _p Pt _q on the first thin film
Ru _r (where p, q, and r are compositions expressed in atomic%), and the composition range is 0 ≦ p ≦ 100, 0 ≦ q ≦ 10
A lower electrode made of a thin film material composed of a second thin film made of a second material satisfying 0, 0 ≦ r ≦ 100, and p + q + r = 100; a dielectric film on the lower electrode; And an upper electrode.

The dielectric capacitor according to a tenth aspect of the invention, the composition formula _{Pd a (Rh 100-xyz Pt} x Ir y
Ru _z ) _b O _c (where a, b, c, x, y, and z are compositions expressed in atomic%), and the composition range is 20 ≦ a
≦ 70, 10 ≦ b ≦ 40, 15 ≦ c ≦ 60, a + b + c
= 100, 0 ≦ x <100, 0 ≦ y <100, 0 ≦ z <
100, a first thin film made of a first material satisfying 0 ≦ x + y + z <100, and a composition formula Ir _p Pt on the first thin film
_q Ru _r O _s (although, p, q, r, s composition expressed in atomic%) is represented by a compositional range 0 ≦ p ≦ 90,0 ≦
q ≦ 90, 0 ≦ r ≦ 90, 0 ≦ s ≦ 10, p + q + r +
It has a lower electrode made of a thin film material made of a second thin film made of a second material with s = 100, a dielectric film on the lower electrode, and an upper electrode on the dielectric film. It is assumed that. 11th dielectric capacitor according to the invention of the present invention, the composition formula Pd _a Rh _b O _c (where
a, b, and c are compositions represented by atomic%), and their composition ranges are 20 ≦ a ≦ 70, 10 ≦ b ≦ 40, and 15 ≦ c ≦ 6.
0, a + b + c = 100
And thin, the first thin film, the composition formula Ir _p Pt _q Ru _r
(Where p, q, and r are compositions expressed in atomic%), and the composition range is 0 ≦ p ≦ 100, 0 ≦ q ≦ 100,
A lower electrode made of a thin film material composed of a second thin film made of a second material satisfying 0 ≦ r ≦ 100 and p + q + r = 100, a dielectric film on the lower electrode, and an upper electrode on the dielectric film And characterized in that:

The dielectric capacitor according to the twelfth aspect of the present invention has a composition formula of Pd _a Rh _b O _c (where a, b,
c is a composition expressed in atomic%), and its composition range is 2
0 ≦ a ≦ 70, 10 ≦ b ≦ 40, 15 ≦ c ≦ 60, a +
b + first and a thin film of a first material c = 100, the first thin film, the composition formula Ir _p Pt _q Ru _r O
_s (where p, q, r, and s are compositions expressed in atomic%), and the composition range is 0 ≦ p ≦ 90, 0 ≦ q ≦ 90,
0 ≦ r ≦ 90, 0 ≦ s ≦ 10, p + q + r + s = 100
A lower electrode made of a thin film material made of a second thin film made of a second material, and a dielectric film on the lower electrode;
And an upper electrode on the dielectric film.

According to a thirteenth aspect of the present invention, a composition formula Pd _a
(Rh _100-xyz Pt _x Ir _y Ru _z ) _b O _c (where a, b, c, x, y, and z are compositions expressed in atomic%), and the composition range is 20 ≦ a ≦ 70. , 10 ≦ b ≦ 4
0, 15 ≦ c ≦ 60, a + b + c = 100, 0 ≦ x <1
00, 0 ≦ y <100, 0 ≦ z <100, 0 ≦ x + y +
first a thin film of a first material which is z <100, the first thin film, the composition formula Ir _p Pt _q Ru _r (where
p, q, and r are compositions represented by atomic%), and their composition ranges are 0 ≦ p ≦ 100, 0 ≦ q ≦ 100, 0 ≦ r ≦ 10
0, a second material made of a second material with p + q + r = 100
A method for manufacturing a dielectric capacitor comprising: a lower electrode made of a thin film material composed of a thin film of: a dielectric film on the lower electrode; and an upper electrode on the dielectric film. It is characterized by being formed by a phase growth method.

According to a fourteenth aspect of the present invention, a composition formula Pd _a
(Rh _100-xyz Pt _x Ir _y Ru _z ) _b O _c (where a, b, c, x, y, and z are compositions expressed in atomic%), and the composition range is 20 ≦ a ≦ 70. , 10 ≦ b ≦ 4
0, 15 ≦ c ≦ 60, a + b + c = 100, 0 ≦ x <1
00, 0 ≦ y <100, 0 ≦ z <100, 0 ≦ x + y +
a first thin film made of a first material in which z <100, and a composition formula Ir _p Pt _{q R UR} O _s on the first thin film (where p, q, r, and s are represented by atomic%. Composition)
The composition range is 0 ≦ p ≦ 90, 0 ≦ q ≦ 90, 0 ≦ r ≦
90, a lower electrode made of a thin film material composed of a second thin film made of a second material satisfying 0 ≦ s ≦ 10 and p + q + r + s = 100, a dielectric film on the lower electrode, and a dielectric film on the dielectric film A method for manufacturing a dielectric capacitor having an upper electrode, wherein a dielectric film is formed by a chemical vapor deposition method.

According to a fifteenth aspect of the present invention, a composition formula Pd _a
Rh _b O _c (where a, b, and c are compositions expressed in atomic%), and the composition range is 20 ≦ a ≦ 70, 10 ≦
first a thin film of a first material which is b ≦ 40,15 ≦ c ≦ 60, a + b + c = 100, the first thin film, the composition formula Ir _p Pt _q Ru _r (however, p, q, r Is atomic%
And the composition range is 0 ≦ p ≦ 10
0, 0 ≦ q ≦ 100, 0 ≦ r ≦ 100, p + q + r = 1
Manufacturing of a dielectric capacitor having a lower electrode made of a thin film material made of a second thin film made of a second material, a dielectric film on the lower electrode, and an upper electrode on the dielectric film A method, wherein the dielectric film is formed by a chemical vapor deposition method.

According to a sixteenth aspect of the present invention, a composition formula Pd _a
Rh _b O _c (where a, b, and c are compositions expressed in atomic%), and the composition range is 20 ≦ a ≦ 70, 10 ≦
first a thin film of a first material which is b ≦ 40,15 ≦ c ≦ 60, a + b + c = 100, the first thin film, the composition formula _{Ir p Pt q Ru r O s} ( although, p, q , R, s
Is a composition represented by atomic%), and the composition range is 0 ≦
p ≦ 90, 0 ≦ q ≦ 90, 0 ≦ r ≦ 90, 0 ≦ s ≦ 1
0, p + q + r + s = 100, a dielectric having a lower electrode made of a thin film material made of a second thin film made of a second material, a dielectric film on the lower electrode, and an upper electrode on the dielectric film. A method for manufacturing a body capacitor, wherein a dielectric film is formed by a chemical vapor deposition method.

In the present invention, the composition formula Pd _a (Rh _100-xyz Pt _x Ir _y R) constituting the first thin film
u _{z) b} O _c or Pd _a Rh _b O composition range of the first material represented by _c is preferably, 30 ≦ a ≦ 60,15 ≦
b ≦ 30, 30 ≦ c ≦ 50, and a + b + c = 100.

In the present invention, the composition formula Ir _p Pt _q R
u _r or Ir _p Pt _q Ru _r O _s second thickness t of the thin film made of a second material represented by the difficult to obtain those 3nm smaller and good quality, strong by a chemical vapor deposition method The effect of suppressing abnormal deposition on the surface during the formation of the dielectric film is too small, and if it is larger than 300 nm, the film thickness becomes unnecessarily large and the formation time becomes too long.
Preferably, 3 nm ≦ t ≦ 300 nm, and more preferably, 10 nm ≦ t ≦ 100 nm.

In the ninth to sixteenth aspects of the present invention,
The dielectric film typically, Bi-based layered perovskite ferroelectric is used, its specific examples, the compositional formula _{Bi x (Sr, Ca, Ba} ) y (Ta,
Nb) ₂ O _z (where 2.50 ≧ x ≧ 1.70, 1.
Ferroelectric material containing 85% or more of a crystal layer represented by 20 ≧ y ≧ 0.60, z = 9 ± d, 1.0 ≧ d ≧ 0 (some Bi)
And an oxide or a composite oxide of Ta or Nb may be contained), or formula _{Bi x Sr y Ta 2 O z} ( where
2.50 ≧ x ≧ 1.70, 1.20 ≧ y ≧ 0.60, z
= 9 ± d, 1.0 ≧ d ≧ 0) 85%
It is a ferroelectric (including a small amount of Bi and Ta or Nb oxides or composite oxides) containing the above. A typical example of the latter is SrBi ₂ Ta ₂ O ₉ . As a material of the dielectric film, a ferroelectric material represented by Pb (Zr, Ti) O ₃ (PZT) may be used. These ferroelectrics are suitable for use as ferroelectric film materials for ferroelectric memories. As a material of the dielectric film, (Ba, Sr) TiO ₃
A high dielectric represented by (BST) can also be used.

When the dielectric capacitor according to the ninth to twelfth aspects of the present invention is used in a semiconductor memory having a memory cell including a transistor and a dielectric capacitor,
When a transistor and a dielectric capacitor are arranged side by side in the vertical direction for high integration, the lower electrode is typically provided on a plug made of Si or W provided on a diffusion layer of the transistor. .

The first aspect of the present invention configured as described above,
According to the thin film material according to the second, third or fourth invention,
Composition formula _{Pd a (Rh 100-xyz Pt} x Ir y Ru z) b
The first first thin film made of a material represented by O _c or Pd _a Rh _b O _c, a second represented by the composition formula Ir _p Pt _q Ru _r or Ir _p Pt _q Ru _r O _s Since the second thin film made of the material is provided, by using this thin film material as the material of the lower electrode of the dielectric capacitor, the SBT film or the PZT film is formed on the lower electrode made of the thin film material by a chemical vapor deposition method. when forming a dielectric film, such as film, the dielectric film composition formula Ir _p Pt _q Ru _r or Ir _p P
t _q Ru _r O from being formed on the second thin film of a second material which is represented by _s, the decomposition deposition process of the raw materials used to form these dielectric film a lower electrode Pt, I
As in the case of forming with r, PtIr, etc., the process proceeds normally, whereby the deposition of constituent elements on the surface of the dielectric film can be suppressed.

According to the fifth aspect of the present invention configured as described above,
According to the method of manufacturing a thin film material according to the sixth, seventh or eighth aspect, the first thin film is formed by a reactive sputtering method using oxygen gas.
Good film quality can be obtained.

The ninth aspect of the present invention configured as described above,
According to the dielectric capacitor of the tenth, eleventh or twelfth aspect, the composition formula Pd _a (Rh _100-xyz Pt _x I
r _y Ru _{z) b} O _c or Pd _a Rh _b O first and the thin film made of a first material expressed by _c, of the first thin film, the composition formula Ir _p Pt _q Ru _r or Ir _p Pt _q Ru _r O _s
Since the lower electrode is made of a thin film material made of a second thin film made of a second material represented by the following formula, when forming a dielectric film on this lower electrode, for example, 600 to 8
When heat treatment is performed at a high temperature of 00 ° C., a deteriorated layer is generated at the interface between the dielectric film and the lower electrode due to diffusion, or in the case of a stacked dielectric capacitor, the interface between the Si plug electrode and the lower electrode is formed. This prevents problems such as an abnormal increase in contact resistance at the interface due to interdiffusion and oxidation of the Si plug electrode surface, and also reduces the dielectric loss when the dielectric film is formed on the lower electrode by chemical vapor deposition. Precipitation of constituent elements on the surface of the body film can be suppressed.

The first embodiment of the present invention configured as described above
According to the method for manufacturing a dielectric capacitor according to the thirteenth, fourteenth, fifteenth or sixteenth aspect, the dielectric film is formed by chemical vapor deposition, so that the dielectric film is formed by spin coating. As compared with the case where the method or the like is used, high productivity can be obtained, and good step coverage can be obtained.

[0031]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 shows a dielectric capacitor according to a first embodiment of the present invention. As shown in FIG. 1, in this dielectric capacitor, Pd is formed on a conductive Si substrate 1.
_A lower electrode composed of a _0.5 Rh _0.3 O _0.2 film 2 and an Ir film 3 thereon, an SBT film 4 as a ferroelectric film, and a Pt film 5 as an upper electrode are sequentially laminated. One example of the thickness of these films is Pd _0.5 Rh _0.3 O _0.2
The film 2 is 200 nm, the Ir film 3 is 25 nm, the SBT film 4 is 200 nm, and the Pt film 5 is 200 nm. This dielectric capacitor is covered with a Ta ₂ O ₅ film 6 as an interlayer insulating film. The thickness of the Ta ₂ O ₅ film 6 is, for example, 50 nm.
It is. Of the Ta ₂ O ₅ film 6, P as the upper electrode
A contact hole 6a is provided in a portion above the t film 5. Then, for example, Al is connected to the Pt film 5 as an upper electrode through the contact hole 6a.
An extraction electrode 7 made of an alloy is provided.

Next, a method of manufacturing the dielectric capacitor according to the first embodiment configured as described above will be described.

First, a Pd _0.5 Rh _0.3 O _0.2 film 2 is formed on a Si substrate 1 by, for example, a reactive sputtering method. As an example of the film forming conditions of the Pd _0.5 Rh _0.3 O _0.2 film 2, a DC magnetron sputtering apparatus is used, and a target in which a plurality of 10 mm × 10 mm square Rh chips are placed on a Pd target having a diameter of 100 mm is used. The sputtering gas used was a mixed gas of argon and oxygen, and their flow rate was 23 SC respectively.
CM and 7SCCM, total pressure is 1.5mTorr,
The input power is DC 0.4 A, 550 V, the film forming temperature is room temperature to 500 ° C., and the film forming speed is 200 nm / 13 minutes.
Next, an Ir film 3 is formed on the Pd _0.5 Rh _0.3 O _0.2 film 2 by, for example, a sputtering method under ordinary conditions.

Next, a thin film having a thickness of, for example, 200 nm containing Bi slightly more than the stoichiometric composition of the finally obtained SBT film 4 is formed on the Ir film 3 by MOCVD. Specifically, the Si substrate 1 formed up to the Ir film 3
Is placed on a susceptor in a reaction chamber (film formation chamber) of an MOCVD apparatus (not shown), and is heated to and maintained at a substrate temperature of 400 to 650 ° C. And Bi ₃ (C ₆ H ₅ ) ₃ , Sr
(DPM) ₂ tetraglyme (DPM = dipivaloyl methanate) and Ta (i-OC ₃ H ₇ )
₄ DPM is prepared by mixing each of the organometallic raw materials at a predetermined composition ratio. The resulting gas is mixed with an argon carrier gas so that their total flow rate is 100%.
Set to 0 SCCM and set the flow rate to 1 just before the reaction chamber.
After mixing with 2,000 SCCM of oxygen gas, the mixed gas is introduced as a source gas into a reaction chamber to form a film. Thus, a thin film containing Bi slightly more than the stoichiometric composition of the finally obtained SBT film 4 is formed. In this case, since this thin film is formed not on the Pd _0.5 Rh _0.3 O _0.2 film 2 but on the Ir film 3, abnormal deposition of the constituent element Bi or the like on the surface of the thin film. Good surface properties and uniformity can be obtained without generation.

Next, the SBT film 4 is obtained by subjecting the thin film thus formed to a heat treatment at, for example, 800 ° C. for 1 hour in an oxygen atmosphere at normal pressure. At this time, both the surface properties and the uniformity of the SBT film 4 are well maintained.

Next, a Pt film 5 is formed on the SBT film 4 by, for example, a sputtering method under ordinary conditions.

Next, heat treatment is performed, for example, at 800 ° C. for 10 minutes in an oxygen atmosphere.

Next, a Pd _0.5 Rh _0.3 O _0.2 film 2, Ir
After patterning the film 3, the SBT film 4 and the Pt film 5 into a shape of a dielectric capacitor by etching, for example,
A Ta ₂ O ₅ film 6 is formed on the entire surface by the VD method.

Next, a predetermined portion of the Ta ₂ O ₅ film 6 above the Pt film 5 is removed by etching to form a contact hole 6a.
To form Next, after an Al alloy film is formed on the entire surface by, for example, a sputtering method, the Al alloy film is patterned into a predetermined shape by etching to form a lead electrode 7.

Through the above steps, the intended dielectric capacitor shown in FIG. 1 is manufactured.

FIG. 2 shows the result of measuring the polarization (P) -voltage (V) hysteresis by applying a voltage between the Si substrate 1 and the extraction electrode 7 of the dielectric capacitor manufactured as described above. . As apparent from FIG. 2, the dielectric polarization value (remanent polarization value) 2P _r = 18.
A value of 5 μC / cm ² and a coercive power of 2E _c = 92 kV / cm were obtained. The values of these 2P _r and 2E _c are good value as a dielectric capacitor using the SBT film 4,
This was obtained by measurement through the Si substrate 1.

FIG. 3 shows that the temperature of the first heat treatment performed to form the SBT film 4 is made equal to the temperature of the second heat treatment performed after the formation of the Pt film 5, and the heat treatment temperatures of 2P _r and 2E _c are set. The result of having measured the dependence is shown. However, the time for the first heat treatment was 1 hour, and the time for the second heat treatment was 10 hours.
Minutes. From FIG 3, 2P _r is a tendency come magnitude higher heat treatment temperatures, 2E _c it can be seen that not much changed by the thermal treatment temperature.

As described above, according to the first embodiment, the lower electrode of the dielectric capacitor is formed of Pd _0.5 Rh _0.3 O
Since the SBT film 4 is formed by the _0.2 film 2 and the Ir film 3 thereon, even if the SBT film 4 is formed by the MOCVD method, the SB electrode having good surface properties and uniformity is formed on the lower electrode.
The T film 4 can be formed, thereby realizing a dielectric capacitor having excellent characteristics. Also, S
Since the MOCVD method can be used to form the BT film 4, the productivity can be increased, and a fine dielectric capacitor can be formed by obtaining good step coverage. An integrated ferroelectric nonvolatile memory can be manufactured.

FIG. 4 shows a dielectric capacitor according to a second embodiment of the present invention. As shown in FIG. 4, in this dielectric capacitor, P
d _0.5 Rh _0.3 O _0.2 film 12 and Pt film 13 thereon
Electrode consisting of: and an SBT film 14 as a ferroelectric film
And a Pt film 15 as an upper electrode are sequentially laminated. One example of the thickness of these films is Pd _0.5 Rh
_{The 0.3} O _0.2 film 12 is 200 nm, and the Pt film 13 is 50 n
m, the SBT film 14 is 200 nm, and the Pt film 15 is 100 n
m. This dielectric capacitor is covered with a Ta ₂ O ₅ film 16 as an interlayer insulating film. This Ta ₂ O ₅ film 1
6 is, for example, 50 nm. This Ta ₂ O ₅ film 1
6, a contact hole 16a is provided in a portion above the Pt film 15 as an upper electrode. Then, Pt as an upper electrode is formed through the contact hole 16a.
An extraction electrode 17 made of, for example, an Al alloy is provided so as to be connected to the film 15.

Next, a description will be given of a method of manufacturing the dielectric capacitor according to the second embodiment configured as described above.

First, a Pd _0.5 Rh _0.3 O _0.2 film 12 is formed on a Si substrate 11 by, for example, a reactive sputtering method. The conditions for forming the Pd _0.5 Rh _0.3 O _0.2 film 12 are the same as in the first embodiment. Next, Pd _0.5 Rh
_A Pt film 13 is formed on the _0.3 O _0.2 film 12 by, for example, a sputtering method under normal conditions.

Next, on the Pt film 13, a thin film having a thickness of, for example, 200 nm containing Bi slightly more than the stoichiometric composition of the finally obtained SBT film 14 is formed by MOCVD. Specifically, the Si substrate 11 formed up to the Pt film 13 is placed on a susceptor in a reaction chamber of a MOCVD apparatus (not shown) and heated to a substrate temperature of 400 to 650 ° C.
Hold. Then, Bi ₃ (C ₆ H ₅ ) ₃ , Sr (DP
M) ₂ tetraglyme, and _{Ta (i-OC 3 H 7} ) 4 D
A mixture of each organometallic raw material of PM at a predetermined composition ratio is vaporized. Then, the resulting gas is mixed with an argon carrier gas so that their total flow rate is 1000 S
Set to CCM and set the flow rate to 100 just before the reaction chamber.
After mixing with 0 SCCM oxygen gas, the mixed gas is introduced into a reaction chamber as a source gas to form a film. As a result, a thin film containing Bi slightly more than the stoichiometric composition of the finally obtained SBT film 14 is formed. in this case,
Since this thin film is formed not on the Pd _0.5 Rh _0.3 O _0.2 film 12 but on the Pt film 13, abnormal deposition such as Bi of a constituent element may occur on the surface of the thin film. And good surface properties and uniformity can be obtained.

Next, the thin film formed as described above is placed, for example, at 800.degree.
The SBT film 14 is obtained by performing a heat treatment for minutes. At this time, both the surface properties and the uniformity of the SBT film 14 are well maintained.

Next, a Pt film 15 is formed on the SBT film 14 by, for example, a sputtering method under ordinary conditions.

Next, a heat treatment is performed, for example, at 800 ° C. for 10 minutes in an oxygen atmosphere.

Next, the Pd _0.5 Rh _0.3 O _0.2 film 12,
After patterning the t film 13, the SBT film 14 and the Pt film 15 into a shape of a dielectric capacitor by etching,
For example, a Ta ₂ O ₅ film 16 is formed on the entire surface by a CVD method.

Next, the Pt film 15 of the Ta ₂ O ₅ film 16
The contact hole 16a is formed by etching away a predetermined portion of the contact hole 16a. Next, after forming an Al alloy film on the entire surface by, for example, a sputtering method, the Al alloy film is patterned into a predetermined shape by etching to form a lead electrode 17.

Through the above steps, the intended dielectric capacitor shown in FIG. 4 is manufactured.

Result of measuring a P-V hysteresis by applying a voltage between the [0055] Si substrate 11 of the above so-produced dielectric capacitor and the extraction electrode 17, the SBT film 14 with 2P _r and 2E _c Good values were obtained for the dielectric capacitors used.

According to the second embodiment, the same advantages as those of the first embodiment can be obtained.

FIG. 5 shows a dielectric capacitor according to a third embodiment of the present invention. As shown in FIG. 5, in this dielectric capacitor, P
d _0.5 Rh _0.3 O _0.2 film 22 and Ir film 23 thereon
Electrode consisting of: and an SBT film 24 as a ferroelectric film
And an Ir film 25 as an upper electrode are sequentially laminated. One example of the thickness of these films is Pd _0.5 Rh
_{The 0.3} O _0.2 film 22 is 200 nm, and the Ir film 23 is 50 n.
m, SBT film 24 is 200 nm, Ir film 25 is 100 n
m. This dielectric capacitor is covered with a Ta ₂ O ₅ film 26 as an interlayer insulating film. This Ta ₂ O ₅ film 2
6 is, for example, 50 nm. This Ta ₂ O ₅ film 2
6, a contact hole 26a is provided in a portion above the Ir film 25 as an upper electrode. Then, Ir as an upper electrode is formed through the contact hole 26a.
An extraction electrode 27 made of, for example, an Al alloy is provided so as to be connected to the film 25.

Next, a method of manufacturing the dielectric capacitor according to the third embodiment having the above-described structure will be described.

First, a Pd _0.5 Rh _0.3 O _0.2 film 22 is formed on a Si substrate 21 by, for example, a reactive sputtering method. The conditions for forming the Pd _0.5 Rh _0.3 O _0.2 film 22 are the same as in the first embodiment. Next, Pd _0.5 Rh
_An Ir film 23 is formed on the _0.3 O _0.2 film 22 by, for example, a sputtering method under ordinary conditions.

Next, a thin film having a thickness of, for example, 200 nm containing Bi slightly more than the stoichiometric composition of the finally obtained SBT film 24 is formed on the Ir film 23 by MOCVD. Specifically, the Si substrate 21 formed up to the Ir film 23 is placed on a susceptor in a reaction chamber of a MOCVD apparatus (not shown) and heated to a substrate temperature of 400 to 650 ° C.
Hold. Then, Bi ₃ (C ₆ H ₅ ) ₃ , Sr (DP
M) ₂ tetraglyme, and _{Ta (i-OC 3 H 7} ) 4 D
A mixture of each organometallic raw material of PM at a predetermined composition ratio is vaporized. Then, the resulting gas is mixed with an argon carrier gas so that their total flow rate is 1000 S
Set to CCM and set the flow rate to 100 just before the reaction chamber.
After mixing with 0 SCCM oxygen gas, the mixed gas is introduced into a reaction chamber as a source gas to form a film. As a result, a thin film containing Bi slightly more than the stoichiometric composition of the finally obtained SBT film 24 is formed. in this case,
Since this thin film is formed not on the Pd _0.5 Rh _0.3 O _0.2 film 22 but on the Ir film 23, abnormal deposition of the constituent element Bi or the like may occur on the surface of the thin film. And good surface properties and uniformity can be obtained.

Next, the SBT film 24 is obtained by subjecting the thin film thus formed to a heat treatment, for example, at 800 ° C. for 1 hour in an oxygen atmosphere at normal pressure. At this time, the surface properties and uniformity of the SBT film 24 are well maintained.

Next, an Ir film 25 is formed on the SBT film 24 by, for example, a sputtering method under ordinary conditions.

Next, heat treatment is performed, for example, at 700 ° C. for 10 minutes in an oxygen atmosphere, for example.

Next, the Pd _0.5 Rh _0.3 O _0.2 film 22, I
After patterning the r film 23, the SBT film 24 and the Ir film 25 into a shape of a dielectric capacitor by etching,
For example, a Ta ₂ O ₅ film 26 is formed on the entire surface by a CVD method.

Next, the Ir film 25 of the Ta ₂ O ₅ film 26
The contact hole 26a is formed by etching and removing a predetermined portion of the contact hole 26a. Next, an Al alloy film is formed on the entire surface by, for example, a sputtering method, and then the Al alloy film is patterned into a predetermined shape by etching to form a lead electrode 27.

Through the above steps, the intended dielectric capacitor shown in FIG. 5 is manufactured.

[0067] The above manner results of measuring a P-V hysteresis by applying a voltage between the Si substrate 21 and the extraction electrode 27 of the manufactured dielectric capacitor, the SBT film 24 with 2P _r and 2E _c Good values were obtained for the dielectric capacitors used.

According to the third embodiment, the same advantages as in the first embodiment can be obtained.

FIG. 6 shows a dielectric capacitor according to a fourth embodiment of the present invention. As shown in FIG. 6, in this dielectric capacitor, P
d _0.5 Rh _0.3 O _0.2 film 32 and Ir _0.5 P thereon
a lower electrode consisting of t _0.5 film 33, the SBT film 34 as a ferroelectric film, and the Ir film 35 as an upper electrode are sequentially stacked. To give an example of the thickness of these films,
Pd _0.5 Rh _0.3 O _0.2 film 32 is 200 nm, Ir _0.5
The Pt _0.5 film 33 is 100 nm, and the SBT film 34 is 200 nm.
The thickness of the m, Ir film 35 is 100 nm. This dielectric capacitor is covered with a Ta ₂ O ₅ film 36 as an interlayer insulating film. The thickness of the Ta ₂ O ₅ film 36 is, for example, 50 nm. Of the Ta ₂ O ₅ film 36, I as the upper electrode
A contact hole 36a is provided in a portion above the r film 35. An extraction electrode 37 made of, for example, an Al alloy is provided so as to be connected to the Ir film 35 as an upper electrode through the contact hole 36a.

Next, a method of manufacturing the dielectric capacitor according to the fourth embodiment having the above-described structure will be described.

First, a Pd _0.5 Rh _0.3 O _0.2 film 32 is formed on a Si substrate 31 by, for example, a reactive sputtering method. The conditions for forming the Pd _0.5 Rh _0.3 O _0.2 film 32 are the same as in the first embodiment. Next, Pd _0.5 Rh
_An Ir _0.5 Pt _0.5 film 33 is formed on the _0.3 O _0.2 film 32 by, for example, a sputtering method under ordinary conditions.

Next, on the Ir _0.5 Pt _0.5 film 33, the MO
The SBT film 34 finally obtained by the CVD method contains Bi slightly in excess of the stoichiometric composition, for example, a film thickness of 200.
A thin film of nm is formed. Specifically, Ir _0.5 Pt _0.5
MOC in which the Si substrate 31 formed up to the film 33 is not shown.
400-65 by installing on the susceptor in the reaction chamber of the VD device
Heat to and hold at 0 ° C. substrate temperature. And Bi
_A mixture of organometallic raw materials of ₃ (C ₆ H ₅ ) ₃ , Sr (DPM) ₂ tetraglyme and Ta (i-OC ₃ H ₇ ) ₄ DPM at a predetermined composition ratio is vaporized. Then, the obtained gas is mixed with an argon carrier gas, and the total flow rate thereof is set to be 1000 SCCM. The mixed gas is mixed with an oxygen gas having a flow rate of 1000 SCCM immediately before the reaction chamber. The film is introduced into the reaction chamber to form a film. As a result, the finally obtained SBT
A thin film containing Bi slightly more than the stoichiometric composition of the film 34 is formed. In this case, this thin film is composed of Pd _0.5 R
Instead of being formed on the h _0.3 O _0.2 film 32, Ir
_{Since the} film is formed on the _0.5 Pt _0.5 film 33, abnormal surface deposition such as Bi of the constituent element does not occur on the surface of the thin film, and good surface properties and uniformity can be obtained.

Next, the SBT film 34 is obtained by subjecting the thin film thus formed to a heat treatment at, for example, 800 ° C. for 1 hour in an oxygen atmosphere at normal pressure. At this time, the surface properties and uniformity of the SBT film 34 are well maintained.

Next, an Ir film 35 is formed on the SBT film 34 by, for example, a sputtering method under ordinary conditions.

Next, a heat treatment is performed, for example, at 700 ° C. for 10 minutes in an oxygen atmosphere, for example.

Next, the Pd _0.5 Rh _0.3 O _0.2 film 32, I
r _0.5 Pt _0.5 film 33, SBT film 34 and Ir film 35
Is patterned into the shape of a dielectric capacitor by etching, and then a Ta ₂ O ₅ film 36 is formed on the entire surface by, for example, a CVD method.

Next, the Ir film 35 of the Ta ₂ O ₅ film 36
The contact hole 36a is formed by etching and removing a predetermined portion of the contact hole 36a. Next, after forming an Al alloy film on the entire surface by, for example, a sputtering method, the Al alloy film is patterned into a predetermined shape by etching to form a lead electrode 37.

Through the above steps, the intended dielectric capacitor shown in FIG. 6 is manufactured.

[0079] The above manner results of measuring a P-V hysteresis by applying a voltage between the extraction electrode 37 and the Si substrate 31 of the manufactured dielectric capacitor, the SBT film 34 with 2P _r and 2E _c Good values were obtained for the dielectric capacitors used.

According to the fourth embodiment, the same advantages as in the first embodiment can be obtained.

FIG. 7 shows a dielectric capacitor according to a fifth embodiment of the present invention. As shown in FIG. 7, in this dielectric capacitor, P
d _0.5 Rh _0.3 O _0.2 film 42 and Ir film 43 thereon
And a PZT film 44 as a ferroelectric film
And an Ir film 45 as an upper electrode are sequentially laminated. One example of the thickness of these films is Pd _0.5 Rh
_{The 0.3} O _0.2 film 42 is 200 nm, and the Ir film 43 is 50 n.
m, PZT film 44 is 200 nm, Ir film 45 is 100 n
m. This dielectric capacitor is covered with a TiO ₂ film 46 as an interlayer insulating film. The thickness of the TiO ₂ film 46 is, for example, 100 nm. A contact hole 46a is provided in a portion of the TiO ₂ film 46 above the Ir film 45 as an upper electrode. Then, the Ir film 4 as an upper electrode is formed through the contact hole 46a.
An extraction electrode 47 made of, for example, an Al alloy is provided so as to be connected to the fifth electrode 5.

Next, a method of manufacturing the dielectric capacitor according to the fifth embodiment having the above-described structure will be described.

First, a Pd _0.5 Rh _0.3 O _0.2 film 42 is formed on a Si substrate 41 by, for example, a reactive sputtering method. The conditions for forming the Pd _0.5 Rh _0.3 O _0.2 film 42 are the same as those in the first embodiment. Next, Pd _0.5 Rh
_An Ir film 43 is formed on the _0.3 O _0.2 film 42 by, for example, a sputtering method under ordinary conditions.

Next, on the Ir film 43, a thin film having a thickness of, for example, 200 nm containing Pb slightly more than the stoichiometric composition of the finally obtained PZT film 44 is formed by MOCVD. Specifically, the Si substrate 41 formed up to the Ir film 43 is placed on a susceptor in a reaction chamber of a MOCVD apparatus (not shown) and heated to a substrate temperature of 400 to 650 ° C.
Hold. And Pb (DPM) ₂ , Zr (DPM)
₂ and _{Ti (O-iC 3 H 7} ) 2 (DPM) total flow rate of each of those organometallic raw materials were mixed in a predetermined composition ratio gas ₂ is mixed with argon carrier gas 1000SCC
M and flow rate 1000S just before the reaction chamber
After mixing with oxygen gas of CCM, this mixed gas is introduced into a reaction chamber as a source gas to form a film. by this,
P is slightly less than the stoichiometric composition of the PZT film 44 finally obtained.
A thin film containing excessive b is formed. In this case, since this thin film is formed not on the Pd _0.5 Rh _0.3 O _0.2 film 42 but on the Ir film 43, abnormal deposition of the constituent element Pb or the like on the surface of the thin film. Good surface properties and uniformity can be obtained without generation.

Next, the thin film formed as described above is subjected to, for example, 650 ° C. for 30 minutes in an oxygen atmosphere at normal pressure.
The PZT film 44 is obtained by performing heat treatment for minutes. At this time, the surface properties and uniformity of the PZT film 44 are well maintained.

Next, an Ir film 45 is formed on the PZT film 44 by, for example, a sputtering method under ordinary conditions.

Next, a heat treatment is performed, for example, at 600 ° C. for 10 minutes in an oxygen atmosphere, for example.

Next, the Pd _0.5 Rh _0.3 O _0.2 film 42, I
After patterning the r film 43, the PZT film 44 and the Ir film 45 into a shape of a dielectric capacitor by etching,
For example, a TiO ₂ film 46 is formed on the entire surface by a CVD method.

Next, a predetermined portion of the TiO ₂ film 46 above the Ir film 45 is removed by etching to remove the contact hole 4.
6a is removed. Next, after an Al alloy film is formed on the entire surface by, for example, a sputtering method, the Al alloy film is patterned into a predetermined shape by etching to form a lead electrode 47.

Through the above steps, the intended dielectric capacitor shown in FIG. 7 is manufactured.

[0091] The above manner results of measuring a P-V hysteresis by applying a voltage between the Si substrate 41 and the extraction electrode 47 of the manufactured dielectric capacitor, the PZT film 44 with 2P _r and 2E _c Good values were obtained for the dielectric capacitors used.

According to the fifth embodiment, the same advantages as in the first embodiment can be obtained.

FIG. 8 shows a dielectric capacitor according to a sixth embodiment of the present invention. As shown in FIG. 8, in this dielectric capacitor, P
d _0.5 Rh _0.3 O _0.2 film 52 and Ir _0.5 R thereon
A lower electrode made of a _u0.5 film 53, a BST film 54 as a ferroelectric film, and a Ru film 55 as an upper electrode are sequentially stacked. To give an example of the thickness of these films,
The Pd _0.5 Rh _0.3 O _0.2 film 52 is 200 nm, Ir _0.5
The Ru _0.5 film 53 is 30 nm, and the BST film 54 is 200 n
The thickness of the m, Ru film 55 is 100 nm. This dielectric capacitor is covered with an SiO ₂ film 56 as an interlayer insulating film. The thickness of the SiO ₂ film 56 is, for example, 200 nm. A contact hole 56a is provided in a portion of the SiO ₂ film 56 above the Ru film 55 as an upper electrode. An extraction electrode 57 made of, for example, an Al alloy is provided so as to be connected to the Ru film 55 as an upper electrode through the contact hole 56a.

Next, a method of manufacturing the dielectric capacitor according to the fifth embodiment configured as described above will be described.

First, a Pd _0.5 Rh _0.3 O _0.2 film 52 is formed on a Si substrate 51 by, for example, a reactive sputtering method. The conditions for forming the Pd _0.5 Rh _0.3 O _0.2 film 52 are the same as those in the first embodiment. Next, Pd _0.5 Rh
_An Ir _0.5 Ru _0.5 film 53 is formed on the _0.3 O _0.2 film 52 by, for example, a sputtering method under ordinary conditions.

Next, on the Ir _0.5 Ru _0.5 film 53, the MO
The BST film 54 having a thickness of, for example, 200 nm is formed by the CVD method.
Is formed. Specifically, the Si substrate 51 formed up to the Ir _0.5 Ru _0.5 film 53 is placed on a susceptor in a reaction chamber of a MOCVD apparatus (not shown), heated to a substrate temperature of 400 to 700 ° C., and held. And Ba (DPM) ₂ ,
Sr (DPM) ₂ and Ti (i-OC ₃ H ₇ ) ₂ (D
Mixed with the oxygen gas flow rate of 1000SCCM the gas mixed with the organic metal source of PM) ₂ in a predetermined composition ratio in the last mixed with argon carrier gas was set such that the total flow rate thereof is 1000SCCM reaction chamber After that, the mixed gas is introduced as a source gas into a reaction chamber to form a film.
Thereby, the BST film 54 is formed. in this case,
Since the BST film 54 is formed not on the Pd _0.5 Rh _0.3 O _0.2 film 52 but on the Ir _0.5 Ru _0.5 film 53, the constituent element Bi or the like is formed on the surface of the BST film 54. No abnormal precipitation occurs, and good surface properties and uniformity can be obtained.

Next, the BST film 54 formed as described above is, for example, 650 mm in an oxygen atmosphere at normal pressure.
Heat treat at 30 ° C. for 30 minutes. At this time, the BST film 54
The surface properties and uniformity are maintained well.

Next, a Ru film 55 is formed on the BST film 54 by, for example, a sputtering method under ordinary conditions.

Next, a heat treatment is performed, for example, at 600 ° C. for 10 minutes in an oxygen atmosphere.

Next, the Pd _0.5 Rh _0.3 O _0.2 film 52, I
r _0.5 Ru _0.5 film 53, BST film 54 and Ru film 55
Is patterned into the shape of a dielectric capacitor by etching, and then an SiO ₂ film 5
6 is formed.

Next, a predetermined portion of the SiO ₂ film 56 above the Ru film 55 is removed by etching to form a contact hole 5.
6a is removed. Next, after an Al alloy film is formed on the entire surface by, for example, a sputtering method, the Al alloy film is patterned into a predetermined shape by etching to form a lead electrode 57.

Through the above steps, the intended dielectric capacitor shown in FIG. 8 is manufactured.

[0103] The above manner results of measuring a P-V hysteresis by applying a voltage between the Si substrate 51 and the extraction electrode 57 of the manufactured dielectric capacitor, the 2P _r and 2E _c with BST film 54 Good values were obtained for the dielectric capacitors used.

According to the sixth embodiment, the same advantages as in the first embodiment can be obtained.

FIG. 9 shows a ferroelectric nonvolatile memory according to the seventh embodiment of the present invention. The ferroelectric nonvolatile memory according to the seventh embodiment uses a stacked dielectric capacitor as a dielectric capacitor forming a memory cell.

As shown in FIG. 9, in the ferroelectric nonvolatile memory according to the seventh embodiment, a field insulating film 62 made of a SiO ₂ film is formed on the surface of a p-type Si substrate 61.
Are selectively provided, thereby performing element isolation. A gate insulating film 63 made of a SiO ₂ film is provided on the surface of the active region surrounded by the field insulating film 62. Reference numeral 64 denotes a gate electrode. Sidewall spacers 65 made of SiO ₂ are provided on the side walls of the gate electrode 64. An n ⁺ -type source region 66 and a drain region 67 are provided in the p-type Si substrate 61 on both sides of the gate electrode 64 in a self-aligned manner with respect to the gate electrode 64. These gate electrode 64, source region 66 and drain region 67
Form an n-channel MOS transistor Q. In this case, the source region 66 and the drain region 67 below the sidewall spacer 65 are provided with, for example, n ⁻ -type low impurity concentration portions 66a and 67a, and the n-channel MOS transistor Q is a so-called LDD ( Lightly Doped Drain) structure.

Reference numeral 68 denotes an interlayer insulating film such as a boron phosphorus silicate glass (BPSG) film. A contact hole 69 is provided in the interlayer insulating film 68 at a predetermined portion above the source region 66, and a polycrystalline Si plug 70 is embedded in the contact hole 69. This polycrystalline Si plug 70 and the interlayer insulating film 6 in the vicinity thereof
So as to extend over the 8, of predetermined shape Pd _a Rh _b O _c
Film 71 and the Ir _p Pt _q Ru _r film 72 are sequentially stacked, these Pd _a Rh _b O _c film 71 and Ir _p
The lower electrode is formed by Pt _q Ru _r film 72.
Here, Pd _a Rh _b O composition range of the _c layer 71 is 20 ≦ a
≦ 70, 10 ≦ b ≦ 40, 15 ≦ c ≦ 60, a + b + c
= A 100, Ir _p Pt _q Ru _r composition range of the film 72 is 0 ≦ p ≦ 100,0 ≦ q ≦ 100,0 ≦ r ≦ 100,
p + q + r = 100. In addition, Ir _p Pt _q Ru _r
The thickness of the film 72 is 3 to 300 nm. Ir _p Pt _q Ru _r film 72 on the example SBT constituting the lower electrode
A ferroelectric film 73 such as a film or a PZT film is laminated, and a Pt film 74 constituting an upper electrode is further laminated thereon. Pd _a Rh _b O _c film 71 and Ir _p P thereon
a lower electrode made of t _q Ru _r film 72, ferroelectric film 73
And an upper electrode made of the Pt film 74 constitute a stacked dielectric capacitor C. The n-channel MOS transistor Q and the dielectric capacitor C constitute one memory cell.

The dielectric capacitor C is made of, for example, Ta ₂ O ₅
It is covered with an interlayer insulating film 75 made of a film. A contact hole 76 is provided in interlayer insulating film 68 and interlayer insulating film 75 in a portion above drain region 67 of n-channel MOS transistor Q. Also, the interlayer insulating film 7
A wiring electrode 77 made of, for example, an Al alloy is provided on 5. This wiring electrode 77 is
Is connected to the drain region 67 of the n-channel MOS transistor Q.

[0109] According to the seventh embodiment, since as a lower electrode of the stacked type dielectric capacitor C by Pd _a Rh _b O _c film 71 and the Ir _p Pt _q Ru _r film 72 thereon MOC as a method of forming the ferroelectric film 73
Even when the VD method is used, the ferroelectric film 73 having good surface properties and uniformity can be formed on the lower electrode, thereby realizing a stacked dielectric capacitor having good characteristics. it can. In addition, since the MOCVD method can be used for forming the ferroelectric film 73, high productivity can be obtained, and fine stack-type dielectric capacitors C can be formed because good step coverage can be obtained. And a highly integrated ferroelectric nonvolatile memory can be realized.

FIG. 10 shows a ferroelectric nonvolatile memory according to the eighth embodiment of the present invention. The ferroelectric nonvolatile memory according to the eighth embodiment uses a pedestal type dielectric capacitor as a dielectric capacitor constituting a memory cell. In FIG. 10, the same or corresponding parts as those in FIG. 9 are denoted by the same reference numerals.

As shown in FIG. 10, in the ferroelectric nonvolatile memory according to the eighth embodiment, Pd _a Rh
_b O _c film 71 is provided on a comparison to thick and narrow the seventh embodiment, the Pd _a Rh _b O Ir so as to cover the upper surface and both side surfaces of the _c layer 71 _p Pt _q Ru _r film 72
Is provided. Furthermore, it is provided the Ir _p Pt _q Ru _r film Pt film 74 of 72 as a ferroelectric film 73 and the upper electrode so as to cover the. The other points are the same as those of the ferroelectric nonvolatile memory according to the seventh embodiment, and the description is omitted.

According to the eighth embodiment, the lower electrode of the pedestal type dielectric capacitor C is formed of Pd _a Rh _b O _c.
Because it constituted by membranes 71 and Ir _p Pt _q Ru _r film 72 thereon, strength MO as a film forming method of the dielectric film 73
Even when the CVD method is used, the ferroelectric film 73 having good surface properties and uniformity can be formed on the lower electrode, thereby realizing a pedestal type dielectric capacitor having good characteristics. it can. In addition, since the MOCVD method can be used for forming the ferroelectric film 73, high productivity can be obtained, and fine pedestal type dielectric capacitors C can be formed because good step coverage can be obtained. Is possible,
A highly integrated ferroelectric nonvolatile memory can be realized.

Although the embodiments of the present invention have been specifically described above, the present invention is not limited to the above embodiments, and various modifications based on the technical concept of the present invention are possible.

For example, the numerical values, structures, organometallic raw materials, materials, processes, and the like described in the first to eighth embodiments are merely examples, and different numerical values, structures, and organic metal materials may be used as necessary. Raw materials, materials, processes, and the like may be used.

[0115]

As described above, according to the first to eighth aspects of the present invention, Pd _a (Rh _100-xyz Pt _x Ir)
_y Ru _{z) b} O _c film or Pd _a Rh _b O _c SB on the membrane
When a dielectric film such as a T film or a PZT film is formed by a chemical vapor deposition method, a dielectric film having good surface properties can be obtained.

[0116] Further, according to the ninth to twelfth invention of the present _{invention, Pd a (Rh 100-xyz} Pt x Ir y Ru z) b
O _c film or Pd _a Rh _b O _c on the membrane, SBT film or PZ
When a dielectric film such as a T film is formed by a chemical vapor deposition method, a dielectric film having good surface properties can be obtained, and a dielectric capacitor having good characteristics can be realized.

[0117] Further, according to the thirteenth to the sixteenth invention of the present _{invention, Pd a (Rh 100-xyz} Pt x Ir y Ru z)
_b O _c film or Pd _a Rh _b O _c on the membrane, SBT film and P
A dielectric film such as a ZT film, while maintaining good surface properties,
It can be formed with high productivity, and good step coverage can be obtained.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a dielectric capacitor according to a first embodiment of the present invention.

FIG. 2 is a schematic diagram showing a result of measuring PV hysteresis of the dielectric capacitor according to the first embodiment of the present invention.

3 is a schematic view showing the results of measurement of the heat treatment temperature dependence of the 2P _r and 2E _c of the dielectric capacitor according to the first embodiment of the present invention.

FIG. 4 is a sectional view showing a dielectric capacitor according to a second embodiment of the present invention.

FIG. 5 is a sectional view showing a dielectric capacitor according to a third embodiment of the present invention.

FIG. 6 is a sectional view showing a dielectric capacitor according to a fourth embodiment of the present invention.

FIG. 7 is a sectional view showing a dielectric capacitor according to a fifth embodiment of the present invention.

FIG. 8 is a sectional view showing a dielectric capacitor according to a sixth embodiment of the present invention.

FIG. 9 is a sectional view showing a ferroelectric nonvolatile memory according to a seventh embodiment;

FIG. 10 is a sectional view showing a ferroelectric nonvolatile memory according to an eighth embodiment of the present invention;

[Explanation of symbols]

1, 11, 21, 31, 41, 51 ... Si substrate,
2, 12, 22, 32, 42, 52 ... Pd _0.5 Rh
_0.3 O _0.2 film, 3, 23, 25, 35, 43, 45 ...
-Ir film, 4, 14, 24, 34 ... SBT film, 5,
13, 15, 74... Pt film, 6, 16, 26, 36
... Ta ₂ O ₅ film, 33 ・ ・ ・ Ir _0.5 Pt _0.5 film,
44 ... PZT film, 46 ... TiO ₂ film, 53 ...
・ Ir _0.5 Ru _0.5 film, 55 ・ ・ ・ Ru film, 56 ・ ・ ・
SiO ₂ film, 71... Pd _a Rh _b O _c film, 72.
· Ir _p Pt _q Ru _r film, 73 ... ferroelectric film

Continued on the front page (51) Int.Cl. ⁶ Identification symbol FI H01L 27/108 H01L 29/78 371 21/8242 21/8247 29/788 29/792 (72) Inventor Chiharu Isobe 6 Kita Shinagawa, Shinagawa-ku, Tokyo 7-35 Chome Sony Corporation (72) Inventor Koji Watanabe 6-7-35 Kita Shinagawa, Shinagawa-ku, Tokyo Inside Sony Corporation

Claims (48)

[Claims] 1. The composition formula Pd _a (Rh _100-xyz Pt _x I
_{r y Ru z) b O c} ( however, a, b, c, x , y, z
Is a composition expressed in atomic%), and its composition range is 20
≦ a ≦ 70, 10 ≦ b ≦ 40, 15 ≦ c ≦ 60, a + b
+ C = 100, 0 ≦ x <100, 0 ≦ y <100, 0 ≦
z <a first thin film made of 100,0 ≦ x + y + z <first material 100, the first thin film, the composition formula Ir _p Pt _q Ru _r (however, p, q, r are atomic% And the composition range is 0 ≦ p ≦ 100, 0 ≦ q ≦ 100, 0 ≦ r ≦
100, a second thin film made of a second material having p + q + r = 100. 2. The composition range of the first material is 30 ≦ a ≦
60, 15 ≦ b ≦ 30, 30 ≦ c ≦ 50, a + b + c =
2. The thin film material according to claim 1, wherein the thickness is 100. 3. The film thickness t of the second thin film is 3 nm ≦ t ≦
2. The thin film material according to claim 1, wherein the thickness is 300 nm. 4. The film thickness t of the second thin film is 10 nm ≦ t.
2. The thin film material according to claim 1, wherein ≤100 nm. 5. The composition formula Pd _a (Rh _100-xyz Pt _x I
_{r y Ru z) b O c} ( however, a, b, c, x , y, z
Is a composition expressed in atomic%), and its composition range is 20
≦ a ≦ 70, 10 ≦ b ≦ 40, 15 ≦ c ≦ 60, a + b
+ C = 100, 0 ≦ x <100, 0 ≦ y <100, 0 ≦
a first thin film made of a first material satisfying z <100 and 0 ≦ x + y + z <100; and a composition formula Ir _p Pt _q Ru _R O on the first thin film.
_s (where p, q, r, and s are compositions expressed in atomic%), and the composition range is 0 ≦ p ≦ 90, 0 ≦ q ≦ 90,
0 ≦ r ≦ 90, 0 ≦ s ≦ 10, p + q + r + s = 100
And a second thin film made of a second material. 6. The composition range of the first material is 30 ≦ a ≦
60, 15 ≦ b ≦ 30, 30 ≦ c ≦ 50, a + b + c =
The thin film material according to claim 5, wherein the thickness is 100. 7. The film thickness t of the second thin film is 3 nm ≦ t ≦
The thin film material according to claim 5, wherein the thickness is 300 nm. 8. The film thickness t of the second thin film is 10 nm ≦ t.
The thin film material according to claim 5, wherein ≤ 100 nm. 9. A composition formula Pd _a Rh _b O _c (where a,
b and c are compositions represented by atomic%), and the composition range is 20 ≦ a ≦ 70, 10 ≦ b ≦ 40, 15 ≦ c ≦ 60,
first a thin film made of a + b + c = 100 a first material, the first thin film, the composition formula Ir _p Pt _q Ru _r (however, p, q, r composition expressed in atomic%) And the composition range is 0 ≦ p ≦ 100, 0 ≦ q ≦ 100, 0 ≦ r ≦
100, a second thin film made of a second material having p + q + r = 100. 10. The composition range of the first material is 30 ≦ a.
≦ 60, 15 ≦ b ≦ 30, 30 ≦ c ≦ 50, a + b + c
The thin film material according to claim 9, wherein = 100. 11. The film thickness t of the second thin film is 3 nm ≦ t.
The thin film material according to claim 9, wherein ≤ 300 nm. 12. The film thickness t of the second thin film is 10 nm ≦
10. The thin film material according to claim 9, wherein t ≦ 100 nm. 13. A composition formula Pd _a Rh _b O _c (provided that:
a, b, and c are compositions represented by atomic%), and their composition ranges are 20 ≦ a ≦ 70, 10 ≦ b ≦ 40, and 15 ≦ c ≦ 6.
0, a + b + c = 100
And thin, of the first thin film, the composition formula Ir _p Pt _q Ru _r O
_s (where p, q, r, and s are compositions expressed in atomic%), and the composition range is 0 ≦ p ≦ 90, 0 ≦ q ≦ 90,
0 ≦ r ≦ 90, 0 ≦ s ≦ 10, p + q + r + s = 100
And a second thin film made of a second material. 14. The composition range of the first material is 30 ≦ a.
≦ 60, 15 ≦ b ≦ 30, 30 ≦ c ≦ 50, a + b + c
14. The thin film material according to claim 13, wherein = 100. 15. The film thickness t of the second thin film is 3 nm ≦ t.
14. The thin film material according to claim 13, wherein ≤300 nm. 16. The film thickness t of the second thin film is 10 nm ≦ 10 nm.
14. The thin film material according to claim 13, wherein t ≦ 100 nm. 17. The composition formula Pd _a (Rh _100-xyz Pt _x
Ir _y Ru _z ) _b O _c (however, a, b, c, x, y,
z is a composition expressed in atomic%), and the composition range is 2
0 ≦ a ≦ 70, 10 ≦ b ≦ 40, 15 ≦ c ≦ 60, a +
b + c = 100, 0 ≦ x <100, 0 ≦ y <100, 0
First a thin film of a first material which is ≦ z <100,0 ≦ x + y + z <100, said first thin film, the composition formula Ir _p Pt _q Ru _r (however, p, q, r are atoms %, And the composition range is 0 ≦ p ≦ 100,
0 ≦ q ≦ 100, 0 ≦ r ≦ 100, p + q + r = 100
A method of manufacturing a thin film material comprising a second thin film made of a second material, wherein the first thin film is formed by a reactive sputtering method using oxygen gas. Manufacturing method of thin film material. 18. The composition formula Pd _a (Rh _100-xyz Pt _x
Ir _y Ru _z ) _b O _c (however, a, b, c, x, y,
z is a composition expressed in atomic%), and the composition range is 2
0 ≦ a ≦ 70, 10 ≦ b ≦ 40, 15 ≦ c ≦ 60, a +
b + c = 100, 0 ≦ x <100, 0 ≦ y <100, 0
First a thin film of a first material which is ≦ z <100,0 ≦ x + y + z <100, the first thin film, the composition formula _{Ir p Pt q Ru r O s} ( although, p, q, r , S is a composition expressed in atomic%), and the composition range is 0 ≦ p ≦
90, 0 ≦ q ≦ 90, 0 ≦ r ≦ 90, 0 ≦ s ≦ 10, p
+ Q + r + s = 100. A method of manufacturing a thin film material comprising a second thin film of a second material, wherein the first thin film is formed by a reactive sputtering method using oxygen gas. Characteristic method of manufacturing thin film material. 19. A composition formula Pd _a Rh _b O _c (provided that:
a, b, and c are compositions represented by atomic%), and their composition ranges are 20 ≦ a ≦ 70, 10 ≦ b ≦ 40, and 15 ≦ c ≦ 6.
0, a + b + c = 100
And the composition formula Ir _p Pt _q R on the first thin film
u _r (however, p, q, r composition expressed in atomic%) is represented by a compositional range 0 ≦ p ≦ 100,0 ≦ q ≦ 10
A method for producing a thin film material comprising: a second thin film of a second material satisfying 0, 0 ≦ r ≦ 100, and p + q + r = 100, wherein the first thin film is formed by a reactive sputtering method using oxygen gas. A method for manufacturing a thin film material, characterized by being formed by: 20. A composition formula Pd _a Rh _b O _c (provided that:
a, b, and c are compositions represented by atomic%), and their composition ranges are 20 ≦ a ≦ 70, 10 ≦ b ≦ 40, and 15 ≦ c ≦ 6.
0, a + b + c = 100
And the composition formula Ir _p Pt _q R on the first thin film
u _r O _s (although, p, q, r, s composition expressed in atomic%) is represented by a compositional range 0 ≦ p ≦ 90,0 ≦ q ≦
90, 0 ≦ r ≦ 90, 0 ≦ s ≦ 10, p + q + r + s =
100. A method for producing a thin film material comprising: a second thin film made of a second material of 100, wherein the first thin film is formed by a reactive sputtering method using oxygen gas. Manufacturing method of thin film material. 21. Composition formula Pd _a (Rh _100-xyz Pt _x
Ir _y Ru _z ) _b O _c (however, a, b, c, x, y,
z is a composition expressed in atomic%), and the composition range is 2
0 ≦ a ≦ 70, 10 ≦ b ≦ 40, 15 ≦ c ≦ 60, a +
b + c = 100, 0 ≦ x <100, 0 ≦ y <100, 0
First a thin film of a first material which is ≦ z <100,0 ≦ x + y + z <100, said first thin film, the composition formula Ir _p Pt _q Ru _r (however, p, q, r are atoms %, And the composition range is 0 ≦ p ≦ 100, 0
A lower electrode made of a thin film material made of a second thin film made of a second material that satisfies ≦ q ≦ 100, 0 ≦ r ≦ 100, and p + q + r = 100; a dielectric film on the lower electrode; A dielectric capacitor having an upper electrode on a dielectric film. 22. The dielectric film according to claim 2, wherein the dielectric film is made of a Bi-based layered structure perovskite ferroelectric.
2. The dielectric capacitor according to 1. 23. The dielectric film, Bi _x (Sr, C
a, Ba) _y (Ta, Nb) ₂ O _z (however, 1.70
≦ x ≦ 2.50, 0.60 ≦ y ≦ 1.20, z = 9 ±
22. The dielectric capacitor according to claim 21, comprising a ferroelectric containing 85% or more of a crystal layer represented by d, 0 ≦ d ≦ 1.0). 24. The dielectric film is made of Pb (Zr, Ti) O.
22. The dielectric capacitor according to claim 21, comprising a ferroelectric material represented by ₃ . 25. The dielectric film is made of (Ba, Sr) TiO.
22. The dielectric capacitor according to claim 21, comprising a high dielectric substance represented by ₃ . 26. The dielectric capacitor according to claim 21, wherein the lower electrode is provided on a plug made of Si or W provided on a diffusion layer of the transistor. 27. A composition formula Pd _a (Rh _100-xyz Pt _x
Ir _y Ru _z ) _b O _c (however, a, b, c, x, y,
z is a composition expressed in atomic%), and the composition range is 2
0 ≦ a ≦ 70, 10 ≦ b ≦ 40, 15 ≦ c ≦ 60, a +
b + c = 100, 0 ≦ x <100, 0 ≦ y <100, 0
First a thin film of a first material which is ≦ z <100,0 ≦ x + y + z <100, the first thin film, the composition formula _{Ir p Pt q Ru r O s} ( although, p, q, r , S is a composition expressed in atomic%), and the composition range is 0 ≦ p ≦
90, 0 ≦ q ≦ 90, 0 ≦ r ≦ 90, 0 ≦ s ≦ 10, p
+ Q + r + s = 100 A lower electrode made of a thin film material made of a second thin film made of a second material, a dielectric film on the lower electrode, and an upper electrode on the dielectric film A dielectric capacitor, characterized in that: 28. The dielectric film according to claim 2, wherein the dielectric film is made of a Bi-based layered structure perovskite ferroelectric.
8. The dielectric capacitor according to 7. 29. The dielectric film, Bi _x (Sr, C
a, Ba) _y (Ta, Nb) ₂ O _z (however, 1.70
≦ x ≦ 2.50, 0.60 ≦ y ≦ 1.20, z = 9 ±
28. The dielectric capacitor according to claim 27, comprising a ferroelectric containing 85% or more of a crystal layer represented by d, 0 ≦ d ≦ 1.0). 30. The dielectric film is made of Pb (Zr, Ti) O.
28. The dielectric capacitor according to claim 27, comprising a ferroelectric material represented by ₃ . 31. The dielectric film is made of (Ba, Sr) TiO.
28. The dielectric capacitor according to claim 27, comprising a high dielectric substance represented by ₃ . 32. The dielectric capacitor according to claim 27, wherein the lower electrode is provided on a plug made of Si or W provided on a diffusion layer of the transistor. 33. A composition formula of Pd _a Rh _b O _c (provided that:
a, b, and c are compositions represented by atomic%), and their composition ranges are 20 ≦ a ≦ 70, 10 ≦ b ≦ 40, and 15 ≦ c ≦ 6.
0, a + b + c = 100
And the composition formula Ir _p Pt _q R on the first thin film
u _r (however, p, q, r composition expressed in atomic%) is represented by a compositional range 0 ≦ p ≦ 100,0 ≦ q ≦ 10
A lower electrode made of a thin film material including a second thin film made of a second material satisfying 0, 0 ≦ r ≦ 100, and p + q + r = 100; a dielectric film on the lower electrode; and the dielectric film A dielectric capacitor having an upper electrode and an upper electrode. 34. The dielectric film according to claim 3, wherein the dielectric film is made of a Bi-based layered structure perovskite ferroelectric.
3. The dielectric capacitor according to item 3. 35. The dielectric film, Bi _x (Sr, C
a, Ba) _y (Ta, Nb) ₂ O _z (however, 1.70
≦ x ≦ 2.50, 0.60 ≦ y ≦ 1.20, z = 9 ±
34. The dielectric capacitor according to claim 33, comprising a ferroelectric containing 85% or more of a crystal layer represented by d, 0 ≦ d ≦ 1.0). 36. The dielectric film is made of Pb (Zr, Ti) O.
34. The dielectric capacitor according to claim 33, comprising a ferroelectric material represented by ₃ . 37. The dielectric film is made of (Ba, Sr) TiO.
34. The dielectric capacitor according to claim 33, comprising a high dielectric substance represented by ₃ . 38. The dielectric capacitor according to claim 33, wherein the lower electrode is provided on a plug made of Si or W provided on a diffusion layer of the transistor. 39. A composition formula of Pd _a Rh _b O _c (provided that:
a, b, and c are compositions represented by atomic%), and their composition ranges are 20 ≦ a ≦ 70, 10 ≦ b ≦ 40, and 15 ≦ c ≦ 6.
0, a + b + c = 100
And the composition formula Ir _p Pt _q R on the first thin film
u _r O _s (although, p, q, r, s composition expressed in atomic%) is represented by a compositional range 0 ≦ p ≦ 90,0 ≦ q ≦
90, 0 ≦ r ≦ 90, 0 ≦ s ≦ 10, p + q + r + s =
100, a lower electrode made of a thin film material made of a second thin film made of a second material, a dielectric film on the lower electrode, and an upper electrode on the dielectric film. Dielectric capacitor. 40. The dielectric film according to claim 3, wherein the dielectric film is made of a Bi-based layered structure perovskite ferroelectric.
10. The dielectric capacitor according to item 9. 41. The dielectric film, Bi _x (Sr, C
a, Ba) _y (Ta, Nb) ₂ O _z (however, 1.70
≦ x ≦ 2.50, 0.60 ≦ y ≦ 1.20, z = 9 ±
40. The dielectric capacitor according to claim 39, comprising a ferroelectric containing 85% or more of a crystal layer represented by d, 0 ≦ d ≦ 1.0. 42. The dielectric film is made of Pb (Zr, Ti) O
40. The dielectric capacitor according to claim 39, comprising a ferroelectric substance represented by ₃ . 43. The dielectric film is made of (Ba, Sr) TiO.
40. The dielectric capacitor according to claim 39, comprising a high dielectric substance represented by ₃ . 44. The dielectric capacitor according to claim 39, wherein the lower electrode is provided on a plug made of Si or W provided on a diffusion layer of the transistor. 45. A composition formula Pd _a (Rh _100-xyz Pt _x
Ir _y Ru _z ) _b O _c (however, a, b, c, x, y,
z is a composition expressed in atomic%), and the composition range is 2
0 ≦ a ≦ 70, 10 ≦ b ≦ 40, 15 ≦ c ≦ 60, a +
b + c = 100, 0 ≦ x <100, 0 ≦ y <100, 0
First a thin film of a first material which is ≦ z <100,0 ≦ x + y + z <100, said first thin film, the composition formula Ir _p Pt _q Ru _r (however, p, q, r are atoms %, And the composition range is 0 ≦ p ≦ 100,
0 ≦ q ≦ 100, 0 ≦ r ≦ 100, p + q + r = 100
A lower electrode made of a thin film material made of a second thin film made of a second material, a dielectric film on the lower electrode, and an upper electrode on the dielectric film. A method of manufacturing a dielectric capacitor, wherein the dielectric film is formed by a chemical vapor deposition method. 46. A composition formula Pd _a (Rh _100-xyz Pt _x
Ir _y Ru _z ) _b O _c (however, a, b, c, x, y,
z is a composition expressed in atomic%), and the composition range is 2
0 ≦ a ≦ 70, 10 ≦ b ≦ 40, 15 ≦ c ≦ 60, a +
b + c = 100, 0 ≦ x <100, 0 ≦ y <100, 0
First a thin film of a first material which is ≦ z <100,0 ≦ x + y + z <100, the first thin film, the composition formula _{Ir p Pt q Ru r O s} ( although, p, q, r , S is a composition expressed in atomic%), and the composition range is 0 ≦ p ≦
90, 0 ≦ q ≦ 90, 0 ≦ r ≦ 90, 0 ≦ s ≦ 10, p
A lower electrode composed of a thin film material composed of a second thin film composed of a second material satisfying + q + r + s = 100; a dielectric film on the lower electrode; and an upper electrode on the dielectric film. A method for manufacturing a dielectric capacitor, wherein the dielectric film is formed by a chemical vapor deposition method. 47. A composition formula of Pd _a Rh _b O _c (provided that:
a, b, and c are compositions represented by atomic%), and their composition ranges are 20 ≦ a ≦ 70, 10 ≦ b ≦ 40, and 15 ≦ c ≦ 6.
0, a + b + c = 100
And the composition formula Ir _p Pt _q R on the first thin film
u _r (however, p, q, r composition expressed in atomic%) is represented by a compositional range 0 ≦ p ≦ 100,0 ≦ q ≦ 10
A lower electrode made of a thin film material including a second thin film made of a second material satisfying 0, 0 ≦ r ≦ 100, and p + q + r = 100; a dielectric film on the lower electrode; and the dielectric film A method for manufacturing a dielectric capacitor having an upper electrode and an upper electrode, wherein the dielectric film is formed by a chemical vapor deposition method. 48. A composition formula of Pd _a Rh _b O _c (provided that:
a, b, and c are compositions represented by atomic%), and their composition ranges are 20 ≦ a ≦ 70, 10 ≦ b ≦ 40, and 15 ≦ c ≦ 6.
0, a + b + c = 100
And the composition formula Ir _p Pt _q R on the first thin film
u _r O _s (although, p, q, r, s composition expressed in atomic%) is represented by a compositional range 0 ≦ p ≦ 90,0 ≦ q ≦
90, 0 ≦ r ≦ 90, 0 ≦ s ≦ 10, p + q + r + s =
A dielectric capacitor comprising: a lower electrode made of a thin film material made of a second thin film made of a second material; a dielectric film on the lower electrode; and an upper electrode on the dielectric film The method of manufacturing a dielectric capacitor, wherein the dielectric film is formed by a chemical vapor deposition method.