JPH11154457A - Card assembly - Google Patents

Abstract

PROBLEM TO BE SOLVED: To produce a mechanism requiring no use of a microelectronics process by arranging a base board and plural electrically conductive stripes to cover the base board, and forming a diamond layer on the base board exposed between it and the electrically conductive stripes. SOLUTION: A diamond layer is desirably a CVD diamond or an amorphous diamond. A cathode composed of a base board 1101 and a metallic wire 1102 is put in an alcohol solution put in a vessel filled with an electrolytic solution such as Al(NO3 )3 and Mg(NO3 )2 . A substance such as Ni, SUS and Pt can be used as an anode. When negative voltage is impressed on the anode, diamond particles 1701 of the nanosize are accumulated on the metallic wire 1102 to become a nucleus of diamond growth. A diamond layer is formed by performing chemical vapor deposition(CVD) of diamond by putting this cathode structure in a vacuum device.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[Cross-reference of related applications] S. Patent application serial number 12179-P058US 'A DISPLA
Y'U. S. Patent application serial number 08 / 706,07
7 'HIGH INTERNATIONAL LAMP' U.S. S. Patent application serial number 86 / 699,11
9 'BACKLIGHTS FOR COLOR L
IQUIDCRYSTAL DISPLAYS '

[0002]

The present invention relates to an electron-emitting device, and more particularly to an electron-emitting cathode component.

[0003]

BACKGROUND OF THE INVENTION Certain diamond films, including nanocrystalline diamond granules and intergrain consisting of a mixture of sp2 and sp3 orbitals, are used in standard microelectronics such as patterning, etching, and photolithography. It has been discovered that after a mechanistic step involving a diamond film using the process, the electron emission is poor or does not emit any electrons. Prior technologies utilizing diamond thin films for electron emission in lamps and flat displays to achieve the desired lamp and display pixel structures require such microelectronic processes. As a result, there is a need for a method of fabricating a mechanism that does not require the use of a microelectronic process on such a diamond thin film and a mechanism for the mechanism.

[0004]

SUMMARY OF THE INVENTION The present invention addresses the foregoing needs by providing a cathode component having a diamond thin film deposited on an electrically conductive stripe on a substrate, wherein the diamond film is not subjected to the microelectronics process. It has the advantage of saving. Diamond is deposited by common methods. The diamond thin film is made of CVD diamond or amorphous diamond having a mixed structure of sp2 and sp3, and is deposited on an electrically conductive substrate. The technical advantages have been described in order to facilitate understanding of the following detailed section, but the features and advantages to be added are described below.

[0005]

DETAILED DESCRIPTION OF THE INVENTION For a better understanding of the present invention first,
I will describe some points such as material and size. But,
It will be apparent that the techniques of the present invention have been obtained without such details. Otherwise, well-known circuits are implemented in block diagram form in order not to obscure the present invention in unnecessary detail.
The details are not necessary to gain an overall understanding of the invention, and since it depends on the individual's skill in the relevant arts, in many respects details such as time considerations have been largely omitted. .

[0006] In the figures, each element is not necessarily drawn to the same scale, and the same numbers are used to indicate corresponding parts in some figures.

In FIG. 1, sputtering, evaporation,
A substrate 100 is depicted having a layer 101 of a conductive material (such as a metal) deposited by a common process, such as vapor deposition. The substrate is made of an insulating material such as glass or ceramics (forsterite or alumina). The conductive material of 101 is Ti, TiW, Cr, M
o, W or a multilayer film of these or other conductive thin films.

Referring now to FIG. 2, 201 is a continuous film of diamond that is deposited on the conductive layer 101 through a shadow mask 202 placed on the substrate using any of the well-known methods. The diamond thin film 201 is made of nanocrystals or microcrystals, and may have any structure of sp2 and sp3. For further information on diamond films, see U.S.A.
S. Patent No. 5,548,185, U.S.A.
S. Patent Application Seri
al No. See 08 / 485,954.

FIG. 4 shows a grid 4 made of a conductive material such as a metal or a material listed as the conductive layer 101.
01 is drawn. The intersection of the grid 401 is covered with a dielectric 402 by a generally known method. SiOx, SixNg, silicon oxynitride, or metal oxide is used as the dielectric or insulator. In this deposition process, a shadow mask may be used.

FIG. 5 shows a sectional structure of the grating and the cathode portion. Here, how the grid 401 is held by the support 501 is also shown. The column 501 is made of a material such as ceramics or glass, and is mechanically attached to the conductive layer 101. Similarly, the grid 401 mechanically contacts the column 501. FIG. 3 shows how the columns 501 are arranged with respect to the substrate 100 and the cathode (diamond) layer.

FIG. 6 shows a sectional view of the shape of a lamp according to the present invention. 6, the anode 600 is combined with the structure depicted in FIG.

The anode 600 may be comprised of one of several well-known anode structures. As an example, the anode 600 includes a glass substrate 602 and a dielectric 603 deposited thereon. Indium tin oxide (I
A (TO) layer 604 is deposited on the dielectric layer 603. Although not shown in the drawing, the fluorescent material 605 is formed by using a shadow mask so that the size of the phosphor layer 605 matches the size of the diamond layer 201 if necessary.
4 is deposited. Further, when a voltage of 5 kV or more is applied, an aluminum layer 6 having a thickness of 500
06 needs to be deposited for the purpose of protecting the phosphor layer 605.

The dielectric layer 603 may be made of one of the dielectric materials described above as the dielectric 402. It is desired that the ITO used has a sheet resistance of 5 to 20 Ω / cm.

The distance from grid 401 to anode 600 is provided by struts 601. Here, the support 601 is made of ceramics or a glass material like the support 501.

In the lamp shown in FIG. 6, the conductive layer 101 is grounded (earthed), and electrons are applied from the diamond layer 201 by applying a DC, AC, or pulse voltage signal to the grid 401 using a voltage source 601. It works by pulling it out. The electrons are extracted from the diamond layer 210, pass through the openings of the grid 401, and accelerate to reach the phosphor layer 605. DC constant voltage is ITO60
4 and ground (earth) or between the phosphor layer 605.

Simulations have shown that the most ideal electron emission occurs when the size of the opening of the grid 401 is about the same as the distance between the grid 401 and the cathode layer 201. Due to the grid technology used for perforated silicon or metal foil, or any conductive material, the grids used here have openings of 1-1000 microns.

The voltage between the anode and the cathode is 5 to 50.
about kV.

A high-intensity lamp as shown in FIG. 6 can be realized even if the electron emission site density is low. This is because, considering the electron optics, the electron beam emitted from the cathode layer 201 diverges through the grid 401. As a result, the anode 600 has uniform illuminance.

Illustrated in FIG. 7 is another embodiment of an anode 600. An embodiment of such another anode is described in U.S. Pat. S. The liquid crystal display (LCD) disclosed in Patent Application Serial No. 08 / 699,119 can be used. Electrons emitted from cathode layer 201 (not shown here) fly toward phosphor layer 700 and strike red phosphor 711 and green phosphor 712 deposited between black matrix coatings 701. . These red, green, and blue (not shown) phosphors emit their own photons toward the liquid crystal sub-pixels 701 to 703, respectively. This is not discussed further here, but U.S. Pat. S. Patent application serial number 08/69
9, 119, which is incorporated herein by reference.

FIG. 8 shows yet another embodiment of an anode that can be used in the field emission lamp disclosed in the present invention. Shown is part of the anode assembly, one sub-pixel 8
1 is a state in which light is emitted by photons generated by the fluorescent substance 82. Light (photons) emitted from the phosphor 82 is dispersed in all directions by the ITO 83 and the substrate 84, and is focused on the sub-pixel 81 by separate or combination of the focus lenses 86 and 87. Note that the phosphor 82 exists between 88 and 89, which are black matrix portions.

FIG. 10 shows a flat panel display, a billboard,
FIG. 3 is a schematic diagram of a lamp arrangement for use with the present invention, or alternatively including other matrix driven displays. The individual lamps 1001 to 1004 may have an anode, a cathode, and a grid, and may be incorporated in the lamp shown in FIG. In FIG. 10, A is the anode,
C represents a cathode and G represents a grid.

Each anode is connected to a 10 kilovolt power supply and has a grid of lamps 1001 and 10
04 is driven by a driver 1011, lamp grids 1002 and 1005 are driven by a driver 1007, and lamp grids 1003 and 1006 are driven by a driver 1008. The cathodes 1001 to 1003 of the lamp are driven by a driver 1009, and the cathodes 1004 to 1006 of the lamp are
010. When turning on a particular lamp, such as lamp 1001, a positive pulse is transmitted from driver 1011 to grid 1001 of the lamp, while a corresponding negative pulse is applied to driver 101.
09 to the cathode 1001 of the lamp. For this reason, electrons are emitted from the cathode 1001 of the lamp to the anode. The lower part of FIG. 10 shows at what timing such pulses should operate to create an image from a particular ramp or pixel.

A depiction of the hardware environment necessary to implement the present invention, that is, a typical hardware configuration of the data processing system 913, is depicted, and includes a central processing unit (C) such as a general macro processor.
PU) 910, and some other devices
FIG. 9 shows a state in which they are connected to each other via the line 2. The system 913 includes a random access memory (RAM) 914 and a read only memory (ROM)
916, disk unit 920 and tape unit 94
Input / output (I / O) adapter 918 for connecting the O.0 to the bus 912, and an interface adapter 922 for connecting other user interface devices such as a keyboard 924, a mouse 926, and a touch screen device to the bus 912. , A communication adapter 934 for connecting the connection system 913 to the data processing network and a display adapter 936 for connecting the connection bus to the display device 928.

A display 938 is an embodiment of the lamp shown in FIG. 6 for a video display. Display 938 may be a flat panel display or a billboard device. The data processing system shown in FIG. 9 can also be used for display technology, which is described below in FIGS. 11-22 (matrix driven display panel structure and method of manufacture).

In FIG. 11, a substrate 1101 is covered with a conductive (metal or the like) thin film 1102, and 1102 is deposited by a well-known technique such as sputtering or vapor deposition. The thickness of the substrate made of ceramic or glass is 1 to 5 mm, and the thickness of the thin film is 0.5 to 1.5 μm.

FIG. 12 shows that a photoresist 1201 is spin-coated on a metal thin film 1102. FIG. 13 shows that a photoresist is patterned on parallel stripes using a mask (not shown). Next, FIG. 14 shows the metal layer 1 between the formed stripes.
3 shows an etching process when etching 101. In FIG. 15, the photoresist 120
1 is removed and only the metal stripe 1102 remains. Here, the width of the metal stripe is about 100 microns, and the interval between the metal stripes is 10 to 20 microns.

FIG. 16 shows a process of selectively depositing diamond particles on the cathode stripe 1102. The cathode composed of the substrate 1101 and the metal wire 1102 is AI
It is put in an organic alcohol solution 1602 put in a 1601 filled with an electrolyte solution such as (NO3) 3, Ma (NO3) 2, La (NO3) 3. Anode 1603
For example, a substance such as nickel, stainless steel, or platinum can be used. The size of the diamond particles is nano-sized and released into the solution 1602. When a negative voltage is applied to the anode by the power supply 1605 and the voltmeter 1604, diamond particles are deposited on the 1102 metal wire and serve as nuclei for the subsequent growth of diamond.

FIG. 17 shows the result of this process. Here, nano-sized diamond particles 1701 are formed by metal wires 1102.
Is deposited on top.

Next, the cathode structure illustrated in FIG. 17 is placed in a vacuum apparatus, and a well-known vapor phase growth (CVD) of diamond is performed. The diamond nucleus growth process initially occurs on diamond particles 1701 and eventually forms a continuous diamond layer 1801 (FIG. 1).
8). As a result of this process, the portion surrounded by the dotted line shows a much higher resistance than the portion of the diamond layer on the metal line 1102. Thereby, crosstalk between the metal wires 1102 can be reduced or eliminated.

FIG. 20 shows that the grid 2000 is manufactured independently of the cathode by the method used in typical semiconductor manufacturing. A natural oxide or another type of dielectric 2002 is deposited on a perforated silicon substrate 2003 by a well-known method. Next, the conductive layer 200
1 (natural oxide or other type of dielectric 2002)
Deposited on layer 2002. Further, the silicon layer 200
3 and another dielectric 2004 is deposited. In general, the width of perforation 2005 is approximately equal to the height of that perforation.

FIG. 22 shows a matrix drive display 22.
01, wherein the anode 600 described above is mechanically attached to the grid 2000 and the cathode of FIG. 18 described above. Note that the height parameter h (the insulator between grid 2000 and diamond 1801) is a positive value greater than or equal to zero. The display 2201 is made by a method similar to that of FIG.

The grid 2000 is interchangeable with the grid 2100 (FIG. 21) and is substantially identical, except that additional layers 2101 and 2102 have been added. Layer 21
01 comprises an added metal layer, while layer 2102 comprises a dielectric. The grid 2100 has the cathode of FIG. 22 connected to the anode, giving the display 2201 a quadrupole structure.

Although the present invention and its advantages have been described in detail, it is easy to imagine that various changes such as substitutions and substitutions can be made without departing from the spirit and scope of the present invention as set forth in the appended claims. Can be

[Brief description of the drawings]

For a more complete understanding of the invention and its advantages, reference is made to the following description in conjunction with the corresponding figures.

FIG. 1. Substrate coated with conductive layer

FIG. 2 Deposition of a diamond layer on a conductive layer

FIG. 3 shows the cathode structure of a lamp according to the invention as seen from above

FIG. 4 Grid

FIG. 5 shows a grid and cathode assembly consistent with the present invention.

FIG. 6 shows a lamp arrangement according to the invention.

FIG. 7 illustrates an alternative anode embodiment consistent with the present invention.

FIG. 8 illustrates another alternative anode embodiment consistent with the present invention.

FIG. 9 shows a data processing system having an arrangement consistent with the present invention.

FIG. 10 is a matrix display for forming a lamp.

FIG. 11-15: Process of forming a cathode stripe on a substrate

FIG. 16: Electrodeposition process of selective diamond particle deposition on cathode stripe

FIG. 17 shows a cathode stripe on which diamond particles have been deposited after the process of FIG.

FIG. 18 shows the deposition of a diamond thin film and the diamond particles of FIG. 17 on a cathode stripe.

FIG. 19 shows a connection to a specific pixel in the display of FIG. 22;

FIG. 20: Grid used in a triode display

FIG. 21: Grid used in quadrupole display

FIG. 22 shows a tripolar display consistent with the present invention.

FIG. 23: Perforations through a grid structure

────────────────────────────────────────────────── ───

[Procedure amendment]

[Submission date] October 26, 1998

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Full text

[Correction method] Change

[Correction contents]

[Document Name] Statement

[Title of the Invention] Cathode assembly

[Claims]

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[Cross-reference of related applications] S. Patent application serial number 12179-P058US'A DISPLAY '
U. S. Patent application serial number 08 / 706,07
7 'HIGH INTERNATIONAL LAMP'U.
S. Patent application serial number 86 / 699,119
'BACKLIGHTS FOR COLOR LIQ
UID CRYSTAL DISPLAYS '

[0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron-emitting device, and more particularly to an electron-emitting cathode assembly.

[0003]

BACKGROUND OF THE INVENTION Certain diamond films, including nanocrystalline diamond granules and intergrain consisting of a mixture of sp2 and sp3 orbitals, are used in standard microelectronics such as patterning, etching, and photolithography. It has been discovered that after a mechanistic step involving a diamond film using the process, the electron emission is poor or does not emit any electrons. Prior technologies utilizing diamond thin films for electron emission in lamps and flat displays to achieve the desired lamp and display pixel structures require such microelectronic processes. As a result, there is a need for a method of fabricating a mechanism that does not require the use of a microelectronic process on such a diamond thin film and a mechanism for the mechanism.

[0004]

SUMMARY OF THE INVENTION The present invention addresses the foregoing needs by a cathode assembly having a diamond thin film deposited on an electrically conductive stripe on a substrate, wherein the diamond film does not go through the microelectronics process. There is an advantage that it can be completed. Diamond is deposited by common methods. The diamond thin film is made of CVD diamond or amorphous diamond having a mixed structure of sp2 and sp3, and is deposited on an electrically conductive substrate. I've described technical advantages to make it easier to understand the details section below,
The features and advantages to be added are described below.

[0005]

DETAILED DESCRIPTION OF THE INVENTION For a better understanding of the present invention first,
I will describe some points such as material and size. But,
It will be apparent that the techniques of the present invention have been obtained without such details. Otherwise, well-known circuits are implemented in block diagram form in order not to obscure the present invention in unnecessary detail.
The details are not necessary to gain an overall understanding of the invention, and since it depends on the individual's skill in the relevant arts, in many respects details such as time considerations have been largely omitted. .

[0006] In the figures, each element is not necessarily drawn to the same scale, and the same numbers are used to indicate corresponding parts in some figures.

In FIG. 1, sputtering, evaporation,
A substrate 100 is depicted having a layer 101 of a conductive material (such as a metal) deposited by a common process, such as vapor deposition. The substrate is made of an insulating material such as glass or ceramics (forsterite or alumina). The conductive material of 101 is Ti TiW, Cr, M
o, W or a multilayer film of these or other conductive thin films.

Referring now to FIG. 2, 201 is a continuous film of diamond that is deposited on the conductive layer 101 through a shadow mask 202 placed on the substrate using any of the well-known methods. The diamond thin film 201 is made of nanocrystals or microcrystals, and may have any structure of sp2 and sp3. For further information on diamond films, see U.S.A.
S. Patent No. 5,548,185, U.S.A.
S. Patent Application Seri
al No. See 08 / 485,954.

FIG. 4 shows a grid 4 made of a conductive material such as a metal or a material listed as the conductive layer 101.
01 is drawn. The intersection of the grid 401 is covered with a dielectric 402 by a generally known method. SiOx, SixNg, silicon oxynitride, or metal oxide is used as the dielectric or insulator. In this deposition process, a shadow mask may be used.

FIG. 5 shows a sectional structure of the grating and the cathode portion. Here, how the grid 401 is held by the support 501 is also shown. The column 501 is made of a material such as ceramics or glass, and is mechanically attached to the conductive layer 101. Similarly, the grid 401 mechanically contacts the column 501. FIG. 3 shows how the columns 501 are arranged with respect to the substrate 100 and the cathode (diamond) layer.

FIG. 6 shows a sectional view of the shape of a lamp according to the present invention. 6, the anode 600 is combined with the structure depicted in FIG.

The anode 600 may be comprised of one of several well-known anode structures. As an example, the anode 600 includes a glass substrate 602 and a dielectric 603 deposited thereon. indium. Tin oxide (I
A (TO) layer 604 is deposited on the dielectric layer 603. Although not shown in the drawing, the fluorescent material 605 is formed by using a shadow mask so that the size of the phosphor layer 605 matches the size of the diamond layer 201 if necessary.
4 is deposited. Further, when a voltage of 5 kV or more is applied, an aluminum layer 6 having a thickness of 500
06 needs to be deposited for the purpose of protecting the phosphor layer 605.

The dielectric layer 603 may be made of one of the dielectric materials described above as the dielectric 402. It is desired that the ITO used has a sheet resistance of 5 to 20 Ω / cm.

The distance from grid 401 to anode 600 is provided by struts 601. Here, the support 601 is made of ceramics or a glass material like the support 501.

In the lamp shown in FIG. 6, the conductive layer 101 is grounded (earthed), and electrons are applied from the diamond layer 201 by applying a DC, AC, or pulse voltage signal to the grid 401 using a voltage source 601. It works by pulling it out. The electrons are extracted from the diamond layer 210, pass through the openings of the grid 401, and accelerate to reach the phosphor layer 605. DC constant voltage is ITO60
4 and ground (earth) or between the phosphor layer 605.

Simulations have shown that the most ideal electron emission occurs when the size of the opening of the grid 401 is about the same as the distance between the grid 401 and the cathode layer 201. Due to the grid technology used for perforated silicon or metal foil, or any conductive material, the grids used here have openings of 1-1000 microns.

The voltage between the anode and the cathode is 5 to 50.
about kV.

A high-intensity lamp as shown in FIG. 6 can be realized even if the electron emission site density is low. This is because, considering the electron optics, the electron beam emitted from the cathode layer 201 diverges through the grid 401. As a result, the anode 600 has uniform illuminance.

Illustrated in FIG. 7 is another embodiment of an anode 600. An embodiment of such another anode is described in U.S. Pat. S. The liquid crystal display (LCD) disclosed in Patent Application Serial No. 08 / 699,119 can be used. Electrons emitted from cathode layer 201 (not shown here) fly toward phosphor layer 700 and strike red phosphor 711 and green phosphor 712 deposited between black matrix coatings 701. . These red, green, and blue (not shown) phosphors emit their own photons toward the liquid crystal sub-pixels 701 to 703, respectively. This is not discussed further here, but U.S. Pat. S. Patent application serial number 08/69
9, 119, which is incorporated herein by reference.

FIG. 8 shows yet another embodiment of an anode that can be used in the field emission lamp disclosed in the present invention. Shown is part of the anode assembly, one sub-pixel 8
1 is a state in which light is emitted by photons generated by the fluorescent substance 82. Light (photons) emitted from the phosphor 82 is dispersed in all directions by the ITO 83 and the substrate 84, and is focused on the sub-pixel 81 by separate or combination of the focus lenses 86 and 87. Note that the phosphor 82 exists between 88 and 89, which are black matrix portions.

FIG. 10 shows a flat panel display, a billboard,
FIG. 3 is a schematic diagram of a lamp arrangement for use with the present invention, or alternatively including other matrix driven displays. The individual lamps 1001 to 1004 may have an anode, a cathode, and a grid, and may be incorporated in the lamp shown in FIG. In FIG. 10, A is the anode,
C represents a cathode and G represents a grid.

Each anode is connected to a 10 kilovolt power supply and has a grid of lamps 1001 and 10
04 is driven by a driver 1011, lamp grids 1002 and 1005 are driven by a driver 1007, and lamp grids 1003 and 1006 are driven by a driver 1008. The cathodes 1001 to 1003 of the lamp are driven by a driver 1009, and the cathodes 1004 to 1006 of the lamp are
010. When turning on a particular lamp, such as lamp 1001, a positive pulse is transmitted from driver 1011 to grid 1001 of the lamp, while a corresponding negative pulse is applied to driver 101.
09 to the cathode 1001 of the lamp. For this reason, electrons are emitted from the cathode 1001 of the lamp to the anode. The lower part of FIG. 10 shows at what timing such pulses should operate to create an image from a particular ramp or pixel.

A depiction of the hardware environment necessary to implement the present invention, that is, a typical hardware configuration of the data processing system 913, is depicted, and includes a central processing unit (C) such as a general macro processor.
PU) 910, and some other devices
FIG. 9 shows a state in which they are connected to each other via the line 2. The system 913 includes a random access memory (RAM) 914 and a read only memory (ROM)
916, disk unit 920 and tape unit 94
0, an input / output (I / O) adapter 918 for connecting to the bus 912; an interface adapter 922 for connecting other user interface devices such as a keyboard 924, a mouse 926, and a touch screen device to the bus 912; A communication adapter 934 for connecting the connection system 913 to the data processing network and a display adapter 936 for connecting the connection bus to the display device 928 are included.

A display 938 is an embodiment of the lamp shown in FIG. 6 for a video display. Display 938 may be a flat panel display or a billboard device. The data processing system shown in FIG. 9 can also be used for display technology, which is described below in FIGS. 11-22 (matrix driven display panel structure and method of manufacture).

In FIG. 11, a substrate 1101 is covered with a conductive (metal or the like) thin film 1102, and 1102 is deposited by a well-known technique such as sputtering or vapor deposition. The thickness of the substrate made of ceramic or glass is 1 to 5 mm, and the thickness of the thin film is 0.5 to 1.5 μm.

FIG. 12 shows that a photoresist 1201 is spin-coated on a metal thin film 1102. FIG. 13 shows that a photoresist is patterned on parallel stripes using a mask (not shown). Next, FIG. 14 shows the metal layer 1 between the formed stripes.
3 shows an etching process when etching 101. In FIG. 15, the photoresist 120
1 is removed and only the metal stripe 1102 remains. Here, the width of the metal stripe is about 100 microns, and the interval between the metal stripes is 10 to 20 microns.

FIG. 16 shows a process of selectively depositing diamond particles on the cathode stripe 1102. The cathode composed of the substrate 1101 and the metal wire 1102 is Al
It is put in an organic alcohol solution 1602 put in a 1601 filled with an electrolyte solution such as (NO3) 3, Ma (NO3) 2, La (NO3) 3. Anode 1603
For example, a substance such as nickel, stainless steel, or platinum can be used. The size of the diamond particles is nano-sized and released into the solution 1602. When a negative voltage is applied to the anode by the power supply 1605 and the voltmeter 1604, diamond particles are deposited on the 1102 metal wire and serve as nuclei for the subsequent growth of diamond.

FIG. 17 shows the result of this process. Here, nano-sized diamond particles 1701 are formed by metal wires 1102.
Is deposited on top.

Next, the cathode structure illustrated in FIG. 17 is placed in a vacuum apparatus, and a well-known vapor phase growth (CVD) of diamond is performed. The diamond nucleus growth process initially occurs on diamond particles 1701 and eventually forms a continuous diamond layer 1801 (FIG. 1).
8). As a result of this process, the portion surrounded by the dotted line shows a much higher resistance than the portion of the diamond layer on the metal line 1102. Thereby, crosstalk between the metal wires 1102 can be reduced or eliminated.

FIG. 20 shows that the grid 2000 is manufactured independently of the cathode by the method used in typical semiconductor manufacturing. A natural oxide or another type of dielectric 2002 is deposited on a perforated silicon substrate 2003 by a well-known method. Next, the conductive layer 200
1 (natural oxide or other type of dielectric 2002)
Deposited on layer 2002. Further, the silicon layer 20
Another dielectric 2004 is deposited underneath 03.
In general, the width of perforation 2005 is approximately equal to the height of that perforation.

FIG. 22 shows a matrix drive display 22.
01, wherein the anode 600 described above is mechanically attached to the grid 2000 and the cathode of FIG. 18 described above. Note that the height parameter h (the insulator between grid 2000 and diamond 1801) is a positive value greater than or equal to zero. The display 2201 is made by a method similar to that of FIG.

The grid 2000 is interchangeable with the grid 2100 (FIG. 21) and is substantially identical, except that additional layers 2101 and 2102 have been added. Layer 21
01 comprises an added metal layer, while layer 2102 comprises a dielectric. The grid 2100 has the cathode of FIG. 22 connected to the anode, giving the display 2201 a quadrupole structure.

Although the present invention and its advantages have been described in detail, it is easy to imagine that various changes such as substitutions and substitutions can be made without departing from the spirit and scope of the present invention as set forth in the appended claims. Can be

BRIEF DESCRIPTION OF THE DRAWINGS For a more complete understanding of the invention and its advantages, reference is made to the following description in conjunction with the corresponding figures.

FIG. 1. Substrate coated with conductive layer

FIG. 2 Deposition of a diamond layer on a conductive layer

FIG. 3 shows the cathode structure of a lamp according to the invention as seen from above

FIG. 4 Grid

FIG. 5 shows a grid and cathode assembly consistent with the present invention.

FIG. 6 shows a lamp arrangement according to the invention.

FIG. 7 illustrates an alternative anode embodiment consistent with the present invention.

FIG. 8 illustrates another alternative anode embodiment consistent with the present invention.

FIG. 9 shows a data processing system having an arrangement consistent with the present invention.

FIG. 10 is a matrix display for forming a lamp.

FIG. 11-15: Process of forming a cathode stripe on a substrate

FIG. 16: Electrodeposition process of selective diamond particle deposition on cathode stripe

FIG. 17 shows a cathode stripe on which diamond particles have been deposited after the process of FIG.

FIG. 18 shows the deposition of a diamond thin film and the diamond particles of FIG. 17 on a cathode stripe.

FIG. 19 shows a connection to a specific pixel in the display of FIG. 22;

FIG. 20: Grid used in a triode display

FIG. 21: Grid used in quadrupole display

FIG. 22 shows a tripolar display consistent with the present invention.

FIG. 23: Perforations through a grid structure

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Christo Bozkov United States Hillsboro, Oregon Northwest 185th Street 2375-401 (72) Inventor Richard Fink United States Austin, Texas Hawkshead 3909 (72) Inventor Narin Kumar United States Buckingham Road, Austin, Texas 11812 (72) Inventor Alexey Tikhonsky Melrose Cove 6205-D, Austin, Texas, United States of America 6205-D Inventor Zvi Yaniv Long Court, Austin, Texas, USA 5810

Claims (11)

[Claims] 1. A cathode component comprising: a substrate; a plurality of electrically conductive stripes coated on a substrate; and a diamond layer coated on the substrate exposed between the electrically conductive stripes. 2. The cathode component according to claim 1, wherein the diamond layer is a CVD diamond. 3. The cathode component according to claim 1, wherein the diamond layer is an amorphous diamond. 4. Fabrication procedure as follows: Substrate Coating a plurality of electrically conductive stripes on a substrate Deposition of diamond on an electrically conductive stripe and a substrate exposed therebetween 5. The fabrication procedure according to claim 4, wherein the diamond layer is a CVD diamond. 6. The fabrication procedure according to claim 4, wherein the diamond layer is an amorphous diamond. 7. The manufacturing procedure according to claim 4, which includes the following forming process: Deposition of an electrically conductive substance on a substrate Coating of an insulator on a layer of an electrically conductive substance Etching of the conductive stripe to match the insulator Removal of the insulator 8. A manufacturing procedure as set forth in claim 7, including the following deposition process: Infiltration of an assembly having a substrate and a plurality of electrically conductive stripes into a container containing an organic solvent and an electrolyte solution. Arrangement of anodes Diamond particles are released into solution Deposition of diamond particles on electrically conductive stripes by applying voltage between assembly and anode Removal of assembly from container Diamond formation process on cathode component 9. The result of the diamond deposition process is a step of performing initial nucleation of diamond on diamond particles on a plurality of electrically conductive stripes, so that a diamond layer between the plurality of electrically conductive stripes is formed on the plurality of electrically conductive stripes. 9. The manufacturing procedure according to claim 8, which exhibits a higher resistance value than the diamond layer. 10. A fabrication procedure as set forth in claim 1 including the following deposition steps: Penetration of an assembly having a substrate and a plurality of electrically conductive stripes into an organic alcohol and electrolyte solution; anode into a container Diffusion of diamond particles into solution; deposition of diamond particles on electrically conductive stripes by applying a voltage between the assembly and the anode; removal of the assembly from the container; formation of diamond on the cathode component. 11. The result of the diamond deposition process is a step of performing initial nucleation of diamond on diamond particles on a plurality of electrically conductive stripes, so that a diamond layer between the plurality of electrically conductive stripes is formed on the plurality of electrically conductive stripes. The production procedure according to claim 10, which exhibits a higher resistance value than the diamond layer of (1). This invention is a US patent application serial number 60/0
29, 922 (Nov. 1, 1996).