JPH11204297A5 - - Google Patents

Info

Publication number
JPH11204297A5
JPH11204297A5 JP1998007991A JP799198A JPH11204297A5 JP H11204297 A5 JPH11204297 A5 JP H11204297A5 JP 1998007991 A JP1998007991 A JP 1998007991A JP 799198 A JP799198 A JP 799198A JP H11204297 A5 JPH11204297 A5 JP H11204297A5
Authority
JP
Japan
Prior art keywords
lower electrode
processing chamber
vacuum processing
magnetic field
pair
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998007991A
Other languages
English (en)
Japanese (ja)
Other versions
JP3973283B2 (ja
JPH11204297A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP00799198A priority Critical patent/JP3973283B2/ja
Priority claimed from JP00799198A external-priority patent/JP3973283B2/ja
Publication of JPH11204297A publication Critical patent/JPH11204297A/ja
Publication of JPH11204297A5 publication Critical patent/JPH11204297A5/ja
Application granted granted Critical
Publication of JP3973283B2 publication Critical patent/JP3973283B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP00799198A 1998-01-19 1998-01-19 プラズマ処理装置及びプラズマ処理方法 Expired - Fee Related JP3973283B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP00799198A JP3973283B2 (ja) 1998-01-19 1998-01-19 プラズマ処理装置及びプラズマ処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP00799198A JP3973283B2 (ja) 1998-01-19 1998-01-19 プラズマ処理装置及びプラズマ処理方法

Publications (3)

Publication Number Publication Date
JPH11204297A JPH11204297A (ja) 1999-07-30
JPH11204297A5 true JPH11204297A5 (da) 2005-06-16
JP3973283B2 JP3973283B2 (ja) 2007-09-12

Family

ID=11680886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP00799198A Expired - Fee Related JP3973283B2 (ja) 1998-01-19 1998-01-19 プラズマ処理装置及びプラズマ処理方法

Country Status (1)

Country Link
JP (1) JP3973283B2 (da)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6451703B1 (en) * 2000-03-10 2002-09-17 Applied Materials, Inc. Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas
US7232766B2 (en) * 2003-03-14 2007-06-19 Lam Research Corporation System and method for surface reduction, passivation, corrosion prevention and activation of copper surface
JP4506318B2 (ja) 2004-07-15 2010-07-21 三菱電機株式会社 表示装置の製造方法および表示装置の製造装置
KR100941070B1 (ko) * 2007-05-10 2010-02-09 세메스 주식회사 플라즈마를 이용하여 기판을 처리하는 장치
US8247315B2 (en) * 2008-03-17 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method for manufacturing semiconductor device
CN103854944A (zh) * 2012-12-04 2014-06-11 上海华虹宏力半导体制造有限公司 刻蚀设备腔体的气体导入结构和气体导入方法
KR101745686B1 (ko) * 2014-07-10 2017-06-12 도쿄엘렉트론가부시키가이샤 기판의 고정밀 에칭을 위한 방법
KR102482734B1 (ko) * 2020-11-13 2022-12-30 충남대학교산학협력단 고주파 펄스 소스 및 저주파 펄스 바이어스를 이용한 플라즈마 극고종횡비 식각 방법
CN114156157B (zh) * 2021-12-01 2024-08-16 大连理工大学 一种等离子体产生装置
CN120977921A (zh) * 2025-10-17 2025-11-18 上海谙邦半导体设备有限公司 一种可控非均匀陶瓷板出气系统及方法

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