JPH11204697A - Substrate mounting mechanism for semiconductor devices - Google Patents

Substrate mounting mechanism for semiconductor devices

Info

Publication number
JPH11204697A
JPH11204697A JP243898A JP243898A JPH11204697A JP H11204697 A JPH11204697 A JP H11204697A JP 243898 A JP243898 A JP 243898A JP 243898 A JP243898 A JP 243898A JP H11204697 A JPH11204697 A JP H11204697A
Authority
JP
Japan
Prior art keywords
interposer
mounting
semiconductor device
semiconductor chip
reinforcing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP243898A
Other languages
Japanese (ja)
Inventor
Yasunori Kono
康憲 河野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP243898A priority Critical patent/JPH11204697A/en
Publication of JPH11204697A publication Critical patent/JPH11204697A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)

Abstract

(57)【要約】 【課題】 補強端子部分のインターポーザの層間剥離を
防止して実装基板との接合強度を向上させることができ
る半導体装置の基板実装機構を提供すること。 【解決手段】 インターポーザ3’の補強端子10が配
置される箇所に、メッキスルーホール15を形成するこ
とにより、この部分のインターポーザ3’の層間を接続
して、実装基板7のねじれや反りなどによって補強端子
10の部分にストレスが生じたとしてもインターポーザ
3’の層間剥離を防止する。これにより、実装基板7と
の接合強度が向上し、半導体装置1’の信頼性が高ま
る。また、新部品導入時等における接合部の剥離試験を
正確に行うことができる。
(57) [Problem] To provide a substrate mounting mechanism of a semiconductor device capable of preventing delamination of an interposer in a reinforcing terminal portion and improving bonding strength with a mounting substrate. SOLUTION: A plating through hole 15 is formed at a position where a reinforcing terminal 10 of an interposer 3 'is arranged, thereby connecting the layers of the interposer 3' at this portion and twisting or warping the mounting board 7 or the like. Even if stress occurs in the reinforcing terminal 10, delamination of the interposer 3 'is prevented. As a result, the bonding strength with the mounting substrate 7 is improved, and the reliability of the semiconductor device 1 'is increased. Further, a peeling test of a joint portion at the time of introduction of a new part or the like can be accurately performed.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、例えばチップ・ス
ケール・パッケージ(CSP)部品に用いて最適な半導
体装置の基板実装機構に関する。
[0001] 1. Field of the Invention [0002] The present invention relates to a substrate mounting mechanism of a semiconductor device which is optimally used for, for example, a chip scale package (CSP) component.

【0002】[0002]

【従来の技術】近年、実装性、実装コストおよび電気特
性に優れた新パッケージとしてBGA(Ball Grid Arra
y )/CSP(Chip Scale Package )が市場に出回り、
主要な半導体パッケージ部品となりつつある。BGA/
CSPは、周囲に足(外部リード)を備えた従来の半導
体パッケージ部品と異なり、実装基板側の腹の部分で要
求される電気的配線を行うもので、実装基板に搭載する
際に多少の位置ずれがあっても半田溶融時にその表面張
力でもって部品を所定の実装位置に合わせるセルフアラ
イメント機能(自動位置合わせ機能)を有している。な
お、CSPはBGAの中でもバンプの配列間隔が狭く、
部品自体を小型化・チップ化したものである。
2. Description of the Related Art In recent years, a BGA (Ball Grid Arra) has been developed as a new package having excellent mountability, mounting cost and electrical characteristics.
y) / CSP (Chip Scale Package) is on the market,
It is becoming a major semiconductor package component. BGA /
Unlike a conventional semiconductor package component having legs (external leads) around the CSP, the CSP performs electrical wiring required at an antinode portion on the mounting board side, and has a certain position when mounted on the mounting board. It has a self-alignment function (automatic alignment function) that adjusts the component to a predetermined mounting position by the surface tension when the solder is melted even if there is a deviation. In addition, CSP has a narrow bump arrangement interval among BGAs,
The parts themselves are downsized and made into chips.

【0003】図2に示すように、元来、BGA/CSP
(以下、半導体装置と呼ぶ)1は、半導体チップ2と、
介装基材としてのインターポーザ3と、これらを一体化
する封止樹脂5とで成り、半導体チップ2はインターポ
ーザ3を介して実装基板7へ実装される。インターポー
ザ3は、セラミック等の無機材料、またはポリイミド等
の有機材料などで成る多層構造であり、半導体チップ2
の保護機能、半導体チップ2と実装基板7との間の熱膨
張率の違いから生ずるストレスを緩和する機能、半導体
チップ2の電極間隔を実装基板7のランド7aの間隔に
拡張配線する機能等を有する。実装基板7のランド部7
aに半田付けされるインターポーザ3の接合部は、半導
体チップ2の電極部とボンディングワイヤ4により電気
的に接続される信号端子9と、インターポーザ3の四隅
に配置される補強端子10とで構成される。この補強端
子10は、実装基板7のねじれや反りにより信号端子9
の半田接合部に作用するストレスを緩和するのを目的と
して設けられたものである。
[0003] As shown in FIG.
(Hereinafter referred to as a semiconductor device) 1 includes a semiconductor chip 2,
The semiconductor chip 2 is mounted on a mounting substrate 7 via the interposer 3, comprising an interposer 3 as an interposer and a sealing resin 5 for integrating them. The interposer 3 has a multilayer structure made of an inorganic material such as ceramic or an organic material such as polyimide.
Protection function, a function of alleviating a stress caused by a difference in thermal expansion coefficient between the semiconductor chip 2 and the mounting substrate 7, a function of extending wiring between the electrodes of the semiconductor chip 2 to a land 7a of the mounting substrate 7, and the like. Have. Land part 7 of mounting substrate 7
The joint portion of the interposer 3 to be soldered to a is composed of a signal terminal 9 electrically connected to the electrode portion of the semiconductor chip 2 by the bonding wire 4 and reinforcing terminals 10 arranged at four corners of the interposer 3. You. The reinforcing terminal 10 is provided with the signal terminal 9 due to the twist or warp of the mounting substrate 7.
It is provided for the purpose of alleviating the stress acting on the solder joints.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、以上の
ように構成される従来技術では、補強端子10が本来の
機能を果たせず、実装基板7との接合強度を向上させる
ことができないという問題がある。これは、使用中、実
装基板7にねじれや反りが生じた時にそのストレスがイ
ンターポーザ3の補強端子10に作用するが、このと
き、図3に示すようにインターポーザ3が層間剥離(破
壊)Fを起こしてしまうからであり、これが原因で補強
端子10が本来の機能を達成できずに上記ストレスが内
方の信号端子9に直接作用してしまう。これにより、半
導体装置1自体の信頼性の低下を招いてしまう結果とな
っている。
However, in the prior art configured as described above, there is a problem that the reinforcing terminal 10 cannot perform its original function and the bonding strength with the mounting substrate 7 cannot be improved. . This is because, during use, when the mounting substrate 7 is twisted or warped, the stress acts on the reinforcing terminals 10 of the interposer 3. At this time, the interposer 3 causes delamination (destruction) F as shown in FIG. For this reason, the stress directly acts on the inner signal terminal 9 because the reinforcing terminal 10 cannot achieve its original function. As a result, the reliability of the semiconductor device 1 itself is reduced.

【0005】また、新機種導入時および新部品登録時
に、これらの機種および部品の評価を行うため、インタ
ーポーザ3の接合部と実装基板7との間の半田接合強度
を測定する剥離試験を行っているのであるが、信号端子
9の部分は適正に剥離される一方で、補強端子10の部
分は上述したインターポーザ3の層間剥離が起こってし
まうので、全体として正しい測定または確認を行うこと
ができないといった問題がある。
In order to evaluate these models and components when introducing new models and registering new components, a peeling test is performed to measure the solder joint strength between the joint of the interposer 3 and the mounting board 7. However, while the signal terminal 9 is properly peeled off, the reinforcing terminal 10 is delaminated in the interposer 3 described above, so that correct measurement or confirmation cannot be performed as a whole. There's a problem.

【0006】本発明は上述の問題に鑑みてなされ、補強
端子部分のインターポーザの層間剥離を防止して実装基
板との接合強度を向上させることができる半導体装置の
基板実装機構を提供することを課題とする。
SUMMARY OF THE INVENTION The present invention has been made in consideration of the above-described problems, and has as its object to provide a substrate mounting mechanism of a semiconductor device capable of preventing delamination of an interposer in a reinforcing terminal portion and improving bonding strength with a mounting substrate. And

【0007】[0007]

【課題を解決するための手段】本発明は、介装基材の補
強端子が配置される箇所にメッキスルーホールを設ける
ことにより、介装基材の層間接続を行うようにしてい
る。これにより、補強端子部分の介装基材の層間剥離が
防止され、補強端子の本来の機能を行わせることができ
る。また、半導体装置の剥離試験を適正に行うことが可
能となる。
According to the present invention, a plated through hole is provided at a place where a reinforcing terminal of the interposed base is arranged, so that interlayer connection of the interposed base is performed. Thereby, delamination of the interposition base material of the reinforcing terminal portion is prevented, and the original function of the reinforcing terminal can be performed. In addition, it becomes possible to appropriately perform a peeling test of the semiconductor device.

【0008】[0008]

【発明の実施の形態】以下、本発明の実施の形態による
半導体装置の基板実装機構について図面を参照して説明
する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A substrate mounting mechanism for a semiconductor device according to an embodiment of the present invention will be described below with reference to the drawings.

【0009】図1は本発明の実施の形態を示しており、
図2と対応する部分については同一の符号を付してい
る。半導体装置1’は、半導体チップ2と、介装基材と
してのインターポーザ3’と、これらを一体化する封止
樹脂5とで成る。半導体チップ2とインターポーザ3’
との間には図示せずとも絶縁体が介在し、半導体チップ
2はインターポーザ3’を介して実装基板7へ実装され
る。インターポーザ3’は本実施の形態ではアラミド繊
維の多層構造で成り、従来と同様、半導体チップ2を保
護する機能、半導体チップ2と実装基板7との間の熱膨
張率の違いによるストレスを緩和する機能、さらに、半
導体チップ2の電極間隔を実装基板7のランド7aの間
隔に拡張配線する機能等を有する。実装基板7のランド
部7aに半田付けされるインターポーザ3’の接合部
は、従来と同様、半導体チップ2の電極部とボンディン
グワイヤ4により電気的に接続される信号端子9と、イ
ンターポーザ3’の四隅に配置される補強端子10とで
構成される。
FIG. 1 shows an embodiment of the present invention.
Parts corresponding to those in FIG. 2 are denoted by the same reference numerals. The semiconductor device 1 'includes a semiconductor chip 2, an interposer 3' as an interposer, and a sealing resin 5 for integrating them. Semiconductor chip 2 and interposer 3 '
Although not shown, an insulator is interposed (not shown), and the semiconductor chip 2 is mounted on the mounting substrate 7 via the interposer 3 '. The interposer 3 ′ has a multilayer structure of aramid fiber in the present embodiment, and functions to protect the semiconductor chip 2 and relieve stress due to a difference in the coefficient of thermal expansion between the semiconductor chip 2 and the mounting board 7, as in the related art. It has a function and a function of extending the wiring between the electrodes of the semiconductor chip 2 to the distance between the lands 7a of the mounting substrate 7, and the like. The junction of the interposer 3 ′ soldered to the land 7 a of the mounting board 7 includes the signal terminal 9 electrically connected to the electrode of the semiconductor chip 2 by the bonding wire 4 and the interposer 3 ′, as in the related art. And reinforcement terminals 10 arranged at four corners.

【0010】そこで、本実施の形態では、インターポー
ザ3’の補強端子10が配置される箇所に、信号端子9
が配置される箇所と同様なメッキスルーホール15を形
成している。このメッキスルーホール15は半導体チッ
プ2とは電気的に絶縁され、いわば、ダミーのスルーホ
ールとして形成されている。また、スルーホールメッキ
は銅である。
Therefore, in the present embodiment, the signal terminal 9 is provided at a position where the reinforcing terminal 10 of the interposer 3 'is disposed.
Are formed in the same plated through hole 15 as the place where. The plated through hole 15 is electrically insulated from the semiconductor chip 2 and is formed as a dummy through hole. The through-hole plating is made of copper.

【0011】このように、インターポーザ3’の補強端
子10が配置される箇所にメッキスルーホール15を形
成することにより、この部分のインターポーザ3’の層
間を銅メッキで接続し、その箇所におけるインターポー
ザ3’の強度を向上させ、実装基板7のねじれや反りに
より補強端子10にストレスが作用したときでも、従来
生じていたインターポーザ3’の層間剥離を防止し、こ
れにより信号端子9の半田接合部に直接ストレスが作用
することを低減している。
As described above, by forming the plated through hole 15 at the position where the reinforcing terminal 10 of the interposer 3 'is arranged, the interlayer of the interposer 3' at this portion is connected by copper plating, and the interposer 3 'at that position is formed. In this case, the interposer 3 ′ is prevented from delaminating even when stress is applied to the reinforcing terminal 10 due to the twisting or warping of the mounting board 7, whereby the solder joint of the signal terminal 9 is formed. It reduces the effects of direct stress.

【0012】したがって、本実施の形態によれば、イン
ターポーザ3’の信号端子9と実装基板7との間の半田
接合強度を高めるという補強端子10の本来の機能を行
わせることができるので、インターポーザ3’と実装基
板7との間の接合強度を従来よりも向上させることがで
きると共に、信号端子9における半田接合部へ作用する
ストレスを軽減して半導体装置1’の信頼性を向上させ
ることができる。
Therefore, according to the present embodiment, the original function of the reinforcing terminal 10 that enhances the solder joint strength between the signal terminal 9 of the interposer 3 'and the mounting board 7 can be performed. It is possible to improve the bonding strength between the 3 ′ and the mounting board 7 as compared with the related art, and to reduce the stress acting on the solder bonding portion of the signal terminal 9 to improve the reliability of the semiconductor device 1 ′. it can.

【0013】また、新機種導入時および新部品登録時に
おいて接合部の剥離試験を行う際にも、補強端子10が
形成される部分のインターポーザ3’の層間剥離の発生
が防止されるので、剥離強度の正しい測定または確認を
行うことができる。
In addition, when a peeling test is performed on a joint portion when a new model is introduced and a new part is registered, delamination of the interposer 3 'at a portion where the reinforcing terminal 10 is formed is prevented. A correct measurement or confirmation of the intensity can be made.

【0014】以上、本発明の実施の形態について説明し
たが、勿論、本発明はこれに限定されることなく、本発
明の技術的思想に基づいて種々の変形が可能である。
Although the embodiment of the present invention has been described above, the present invention is, of course, not limited to this, and various modifications can be made based on the technical concept of the present invention.

【0015】例えば以上の実施の形態では、半導体装置
1’における半導体チップ2は、電極部を上方に向けた
フェイスアップタイプを用いたが、反対に、電極部を下
方(インターポーザ3’側)に向けたフェイスダウンタ
イプの半導体チップについても本発明は適用可能であ
る。なお、この場合、インターポーザ3’との接続は、
フリップチップ的に行われると共に、実装基板7の配線
間隔に拡張されて実装される。また、インターポーザ
3’の材質も適宜変更可能であり、例えば実装基板7の
材質(熱膨張係数)との関係で決定される。
For example, in the above embodiment, the semiconductor chip 2 in the semiconductor device 1 ′ is of a face-up type in which the electrode portion is directed upward. On the contrary, the electrode portion is directed downward (to the interposer 3 ′). The present invention is also applicable to a face-down type semiconductor chip directed to the semiconductor chip. In this case, the connection with the interposer 3 ′
The mounting is performed in a flip-chip manner, while being extended to the wiring interval of the mounting board 7. In addition, the material of the interposer 3 ′ can be changed as appropriate, and is determined by, for example, the relationship with the material (thermal expansion coefficient) of the mounting substrate 7.

【0016】[0016]

【発明の効果】以上述べたように、本発明の半導体装置
の基板実装機構によれば、介装基材の補強端子が配置さ
れる箇所にメッキスルーホールを設けることにより介装
基材の各層を接続するようにしているので、補強端子部
分の介装基材の層間剥離または破壊を防止して補強端子
の本来の機能を行わせることができ、よって、実装基板
との接合強度を向上させて半導体装置の信頼性を高める
ことができる。また、新規部品導入時および新規部品登
録時における接合部の剥離試験を適正に行うことが可能
となる。
As described above, according to the substrate mounting mechanism of the semiconductor device of the present invention, the plated through holes are provided at the positions where the reinforcing terminals of the interposed base are arranged, so that each layer of the interposed base is provided. Is connected, the interlayer can be prevented from delamination or destruction of the interposed base material of the reinforcing terminal portion, and the original function of the reinforcing terminal can be performed, thereby improving the bonding strength with the mounting board. Thus, the reliability of the semiconductor device can be improved. In addition, it becomes possible to appropriately perform a peeling test of a joint portion when introducing a new component and registering a new component.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施の形態を示す要部の断面図であ
る。
FIG. 1 is a sectional view of a main part showing an embodiment of the present invention.

【図2】従来例を示す要部の断面図である。FIG. 2 is a sectional view of a main part showing a conventional example.

【図3】図2の作用を示す側面図である。FIG. 3 is a side view showing the operation of FIG. 2;

【符号の説明】[Explanation of symbols]

1’………半導体装置、2………半導体チップ、3’…
……インターポーザ、4………ボンディングワイヤ、5
………封止樹脂、7………実装基板、9………信号端
子、10………補強端子、12………半田、15………
メッキスルーホール。
1 '... semiconductor device, 2 ... semiconductor chip, 3' ...
…… interposer, 4 …… bonding wire, 5
... sealing resin, 7 ... mounting board, 9 ... signal terminals, 10 ... reinforcing terminals, 12 ... solder, 15 ...
Plating through hole.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 半導体チップを介装基材を介して実装基
板へ実装する半導体装置の基板実装機構であって、前記
介装基材の前記実装基板側の面に、前記半導体チップの
電極部と接続される複数の信号端子と、前記介装基材の
四隅に配置され前記実装基板との接合を補強するための
補強端子とで成る接合部が設けられる半導体装置の基板
実装機構において、 前記介装基材の前記補強端子が配置される箇所に、メッ
キスルーホールを形成したことを特徴とする半導体装置
の基板実装機構。
1. A board mounting mechanism of a semiconductor device for mounting a semiconductor chip on a mounting board via an interposer, wherein an electrode portion of the semiconductor chip is provided on a surface of the interposer which is closer to the mounting board. A plurality of signal terminals connected to the mounting substrate, and a bonding portion comprising reinforcing terminals arranged at four corners of the interposition base material and reinforcing the bonding with the mounting substrate is provided. A substrate mounting mechanism for a semiconductor device, wherein a plated through hole is formed at a position of the interposition base where the reinforcing terminal is arranged.
【請求項2】 前記半導体チップと前記介装基材とは封
止樹脂により一体化されることを特徴とする請求項1に
記載の半導体装置の基板実装機構。
2. The substrate mounting mechanism of a semiconductor device according to claim 1, wherein the semiconductor chip and the interposer are integrated with a sealing resin.
【請求項3】 前記介装基材は多層構造であり、前記半
導体チップの配線間隔を前記実装基板の配線間隔に拡張
する回路が形成されることを特徴とする請求項1に記載
の半導体装置の基板実装機構。
3. The semiconductor device according to claim 1, wherein the interposer has a multilayer structure, and a circuit for extending a wiring interval of the semiconductor chip to a wiring interval of the mounting board is formed. Board mounting mechanism.
【請求項4】 前記補強端子に形成されるメッキスルー
ホールは、前記半導体チップの各電極部と電気的に絶縁
されていることを特徴とする請求項1に記載の半導体装
置の基板実装機構。
4. The board mounting mechanism of a semiconductor device according to claim 1, wherein the plated through hole formed in the reinforcing terminal is electrically insulated from each electrode portion of the semiconductor chip.
JP243898A 1998-01-08 1998-01-08 Substrate mounting mechanism for semiconductor devices Pending JPH11204697A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP243898A JPH11204697A (en) 1998-01-08 1998-01-08 Substrate mounting mechanism for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP243898A JPH11204697A (en) 1998-01-08 1998-01-08 Substrate mounting mechanism for semiconductor devices

Publications (1)

Publication Number Publication Date
JPH11204697A true JPH11204697A (en) 1999-07-30

Family

ID=11529285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP243898A Pending JPH11204697A (en) 1998-01-08 1998-01-08 Substrate mounting mechanism for semiconductor devices

Country Status (1)

Country Link
JP (1) JPH11204697A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011222552A (en) * 2010-04-02 2011-11-04 Denso Corp Surface-mount electronic component and surface-mount electronic component mounting structure
KR101391108B1 (en) * 2012-09-04 2014-04-30 에스티에스반도체통신 주식회사 Method for manufacturing semiconductor chip pakage
US10217701B1 (en) 2017-08-29 2019-02-26 Toshiba Memory Corporation Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011222552A (en) * 2010-04-02 2011-11-04 Denso Corp Surface-mount electronic component and surface-mount electronic component mounting structure
KR101391108B1 (en) * 2012-09-04 2014-04-30 에스티에스반도체통신 주식회사 Method for manufacturing semiconductor chip pakage
US10217701B1 (en) 2017-08-29 2019-02-26 Toshiba Memory Corporation Semiconductor device

Similar Documents

Publication Publication Date Title
US6734557B2 (en) Semiconductor device
US6347037B2 (en) Semiconductor device and method of forming the same
US6037665A (en) Mounting assembly of integrated circuit device and method for production thereof
US6441493B1 (en) Circuit board having interconnection ball lands and ball grid array (BGA) package using the circuit board
JPH11312712A (en) Semiconductor device and manufacturing method thereof
US7081375B2 (en) Semiconductor package having thermal interface material (TIM)
EP0520841A1 (en) Composite flip chip semi-conductor device and method for making and burning-in the same
JP4971243B2 (en) Wiring board
US6201707B1 (en) Wiring substrate used for a resin-sealing type semiconductor device and a resin-sealing type semiconductor device structure using such a wiring substrate
KR970067817A (en) Semiconductor package and manufacturing method thereof
JPH0888245A (en) Semiconductor device
US6787922B2 (en) Semiconductor chip—mounting board
US6448110B1 (en) Method for fabricating a dual-chip package and package formed
JPH1167968A (en) Printed circuit board for ball grid array package, ball grid array package, and manufacturing method thereof
KR20050021905A (en) Package for a semiconductor device
KR100392720B1 (en) Chip scale package in which layout of wiring lines is improved
US20080116588A1 (en) Assembly and Method of Placing the Assembly on an External Board
TWI613771B (en) Semiconductor package
US6710434B1 (en) Window-type semiconductor package and fabrication method thereof
US6472759B1 (en) Ball grid array type semiconductor device
KR20030012994A (en) Tape ball grid array semiconductor chip package having ball land pad which is isolated with adhesive and manufacturing method thereof and multi chip package
KR100192758B1 (en) Method of manufacturing semiconductor package and structure of the same
JP2003249606A (en) Semiconductor device and interposer
JPH10209321A (en) Semiconductor integrated circuit device
JP3132481B2 (en) Circuit device, semiconductor chip, interposer substrate, and method of manufacturing circuit device