JPH11214796A - Heat sink for laser device and method of manufacturing the same - Google Patents
Heat sink for laser device and method of manufacturing the sameInfo
- Publication number
- JPH11214796A JPH11214796A JP10010441A JP1044198A JPH11214796A JP H11214796 A JPH11214796 A JP H11214796A JP 10010441 A JP10010441 A JP 10010441A JP 1044198 A JP1044198 A JP 1044198A JP H11214796 A JPH11214796 A JP H11214796A
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- laser element
- mounting portion
- semiconductor laser
- element mounting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
(57)【要約】
【課題】ヒートシンク本体部を確実に気密性にでき、か
つ、放熱効果を向上でき、しかも、製造を容易にできる
レーザ素子のヒートシンク及びその製造方法を提供する
ことにある。
【解決手段】表面に凹部29が設けられると共に複数の
接続端子貫通孔25a,25bが設けられた板状のヒー
トシンク本体25と、このヒートシンク本体25の凹部
29に一部が埋設されヒートシンク本体25表面より突
出して設けられたレーザ素子取付部23とを具備し、前
記レーザ素子取付部23は、ヒートシンク本体凹部29
の埋設部分の直径がヒートシンク本体25表面より突出
した部分の直径より大きく形成されることを特徴とす
る。
(57) Abstract: An object of the present invention is to provide a heat sink of a laser element and a method of manufacturing the same, which can surely make a heat sink main body airtight, can improve a heat radiation effect, and can be easily manufactured. A heat sink body (25) having a recess (29) on its surface and a plurality of connection terminal through holes (25a, 25b), and a surface of the heat sink body (25) partially embedded in the recess (29) of the heat sink body (25). And a laser element mounting portion 23 that is provided so as to protrude further.
Is characterized in that the diameter of the buried portion is larger than the diameter of the portion protruding from the surface of the heat sink body 25.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、例えばCD、DV
Dの信号ピックアップ等に用いられるレーザ素子が取付
られると共にレーザ素子からの発熱を放熱するレーザ素
子のヒートシンク及びその製造方法に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention
The present invention relates to a heat sink of a laser element to which a laser element used for a signal pickup of D is attached and radiates heat from the laser element, and a method of manufacturing the same.
【0002】[0002]
【従来の技術】従来、CD、DVDの信号ピックアップ
等に用いられる半導体レーザ素子は動作中発熱するた
め、半導体レーザ素子からの発熱を放熱するため、半導
体レーザ素子をヒートシンクに取付けて用いられる。2. Description of the Related Art Conventionally, a semiconductor laser device used for a signal pickup of a CD or a DVD generates heat during operation, and therefore, a semiconductor laser device is attached to a heat sink to radiate heat generated from the semiconductor laser device.
【0003】図6は従来の半導体レーザ素子のヒートシ
ンクを示す斜視図である。図において、1は半導体レー
ザ素子のヒートシンク、2は半導体レーザ素子、3は半
導体レーザ素子取付部、4,5は接続端子、4a,5a
は端子部、6は接地端子、7はヒートシンク本体、8
a,8bは端子貫通孔、9は素子取付部貫通孔、10は
絶縁ガラスである。すなわち、鉄よりなる板状のヒート
シンク本体7には端子貫通孔8a,8bが設けられると
共に素子取付部貫通孔9が設けられる。前記素子取付部
貫通孔9には銅又は銅合金よりなる半導体レーザ素子取
付部3が圧入してろう付けされる。この半導体レーザ素
子取付部3の一部はヒートシンク本体7より突出して設
けられ、このヒートシンク本体7より突出した半導体レ
ーザ素子取付部3は相対向する二つの平坦面が形成され
るように圧縮され、この圧縮された平坦面の一方には半
導体レーザ素子2が取付られる。前記端子貫通孔8a,
8bには接続端子4,5がそれぞれ対応して貫通される
と共に絶縁ガラス10により気密に封着される。前記接
続端子4,5上端には端子部4a,5aがそれぞれ対応
して設けられ、この端子部4a,5aは前記半導体レー
ザ素子2にワイヤボンティングにより接続される。接地
端子6はヒートシンク本体7の下面にろう付け、又は、
抵抗溶接等の方法で取付けられる。FIG. 6 is a perspective view showing a heat sink of a conventional semiconductor laser device. In the figure, 1 is a heat sink of a semiconductor laser device, 2 is a semiconductor laser device, 3 is a mounting portion of a semiconductor laser device, 4, 5 are connection terminals, 4a and 5a.
Is a terminal portion, 6 is a ground terminal, 7 is a heat sink body, 8
Reference numerals a and 8b denote terminal through holes, reference numeral 9 denotes an element mounting portion through hole, and reference numeral 10 denotes insulating glass. That is, the terminal through holes 8a and 8b are provided in the plate-shaped heat sink body 7 made of iron, and the element mounting portion through hole 9 is provided. The semiconductor laser device mounting portion 3 made of copper or a copper alloy is press-fitted into the device mounting portion through hole 9 and brazed. A part of the semiconductor laser device mounting portion 3 is provided so as to protrude from the heat sink body 7, and the semiconductor laser device mounting portion 3 protruding from the heat sink body 7 is compressed so as to form two opposing flat surfaces, The semiconductor laser device 2 is mounted on one of the compressed flat surfaces. The terminal through holes 8a,
The connection terminals 4 and 5 are respectively penetrated through 8b and are hermetically sealed with the insulating glass 10. Terminal portions 4a and 5a are respectively provided at the upper ends of the connection terminals 4 and 5, and the terminal portions 4a and 5a are connected to the semiconductor laser device 2 by wire bonding. The ground terminal 6 is brazed to the lower surface of the heat sink body 7, or
It is attached by a method such as resistance welding.
【0004】[0004]
【発明が解決しようとする課題】ヒートシンク本体7の
材料に鉄を用いることにより、接続端子4,5を端子貫
通孔8a,8bに絶縁ガラス10により良好に封着する
ことができる。しかしながら、鉄の熱伝導率が銅の熱伝
導率より小さいため、半導体レーザ素子取付部3の材料
に銅を用いているが、半導体レーザ素子取付部3はヒー
トシンク本体7の素子取付部貫通孔9に埋設した部分が
ヒートシンク本体7の上面より突出した部分より小さい
ため、十分な放熱効果を得ることができない。また、半
導体レーザ素子取付部3はヒートシンク本体7の素子取
付部貫通孔9に圧入されるため、ヒートシンク本体7に
亀裂が生じる虞があり、気密性に問題があった。By using iron as the material of the heat sink body 7, the connection terminals 4 and 5 can be better sealed to the terminal through holes 8a and 8b with the insulating glass 10. However, since the thermal conductivity of iron is smaller than the thermal conductivity of copper, copper is used as the material of the semiconductor laser device mounting portion 3. Is smaller than the portion protruding from the upper surface of the heat sink body 7, so that a sufficient heat radiation effect cannot be obtained. Further, since the semiconductor laser device mounting portion 3 is press-fitted into the device mounting portion through hole 9 of the heat sink body 7, there is a possibility that the heat sink body 7 may be cracked, and there is a problem in airtightness.
【0005】又、従来は半導体レーザ素子取付部3を単
体で高精度に製造することが困難であり、更に、従来の
半導体レーザ素子取付部3は素子取付部貫通孔9にろう
付けするため、例えば1000℃等の高熱に加熱される
ことにより、半導体レーザ素子取付部3の位置精度が低
下する欠点があった。Conventionally, it is difficult to manufacture the semiconductor laser device mounting portion 3 by itself with high accuracy. Further, since the conventional semiconductor laser device mounting portion 3 is brazed to the device mounting portion through hole 9, For example, when heated to a high temperature such as 1000 ° C., there is a disadvantage that the positional accuracy of the semiconductor laser element mounting portion 3 is reduced.
【0006】本発明は上記の事情に鑑みてなされたもの
で、ヒートシンク本体部を確実に気密性にし得、かつ、
放熱効果を向上し得、しかも、製造を容易にして高精
度、安価にし得るレーザ素子のヒートシンク及びその製
造方法を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and it is possible to surely make a heat sink main body airtight.
An object of the present invention is to provide a heat sink for a laser element and a method for manufacturing the same, which can improve the heat radiation effect, and can be manufactured easily, with high precision and at low cost.
【0007】[0007]
【課題を解決するための手段】上記目的を達成するため
に本発明のレーザ素子のヒートシンクは、表面に凹部が
設けられると共に複数の接続端子貫通孔が設けられた板
状のヒートシンク本体と、このヒートシンク本体の凹部
に一部が埋設されヒートシンク本体表面より突出して設
けられたレーザ素子取付部とを具備し、前記レーザ素子
取付部は、ヒートシンク本体凹部の埋設部分の直径がヒ
ートシンク本体表面より突出した部分の直径より大きく
形成されることを特徴とするものである。In order to achieve the above object, a heat sink of a laser device according to the present invention comprises a plate-shaped heat sink body having a concave portion on the surface and a plurality of connection terminal through holes, and A laser element mounting portion partially embedded in the concave portion of the heat sink main body and provided so as to protrude from the surface of the heat sink main body, wherein the diameter of the embedded portion of the concave portion of the heat sink main body protrudes from the surface of the heat sink main body. It is characterized by being formed larger than the diameter of the part.
【0008】また本発明のレーザ素子のヒートシンク製
造方法は、板状のヒートシンク本体部に凹部を形成する
凹部形成工程と、この凹部形成工程で形成された凹部に
レーザ素子取付部用材料を圧入する圧入工程と、この圧
入工程の後、前記レーザ素子取付部用材料とヒートシン
ク本体部の表面が平坦になるように圧縮する圧縮工程
と、この圧縮工程の後、前記ヒートシンク本体部及びレ
ーザ素子取付部用材料を金型に圧入してヒートシンク本
体部を成型すると共にレーザ素子取付部用材料の一部を
ヒートシンク本体表面より突出する成型工程と、前記ヒ
ートシンク本体に接続端子貫通孔を設ける貫通孔形成工
程とを具備することを特徴とする。In the method for manufacturing a heat sink for a laser element according to the present invention, a concave part forming step of forming a concave part in a plate-shaped heat sink main body part, and a material for a laser element mounting part is pressed into the concave part formed in the concave part forming step. A press-fitting step, a compression step of compressing the material of the laser element mounting portion and the surface of the heat sink main body after the press-fitting step so that the surfaces of the heat sink main body become flat, and after the compression step, the heat sink main body and the laser element mounting portion Forming a heat sink body by press-fitting the material into a mold and projecting a part of the material for the laser element mounting portion from the surface of the heat sink body; and forming a through-hole for providing a connection terminal through-hole in the heat sink body. And characterized in that:
【0009】また本発明のレーザ素子のヒートシンク製
造方法は、板状のヒートシンク本体部に貫通孔を形成す
る貫通孔形成工程と、この貫通孔形成工程で形成された
貫通孔にレーザ素子取付部用材料を圧入する圧入工程
と、この圧入工程の後、前記レーザ素子取付部用材料と
ヒートシンク本体部の表面が平坦になるように圧縮する
圧縮工程と、この圧縮工程の後、前記ヒートシンク本体
部及びレーザ素子取付部用材料を金型に圧入してヒート
シンク本体部を成型すると共にレーザ素子取付部用材料
の一部をヒートシンク本体表面より突出する成型工程
と、前記ヒートシンク本体に接続端子貫通孔を設ける貫
通孔形成工程とを具備することを特徴とする。Further, according to the method for manufacturing a heat sink of a laser element of the present invention, a through hole forming step of forming a through hole in a plate-shaped heat sink main body, and a through hole formed in the through hole forming step for a laser element mounting portion. A press-fitting step of press-fitting the material, and after this press-fitting step, a compression step of compressing the laser element mounting portion material and the surface of the heat sink body so as to be flat, and after the compression step, the heat sink body and A molding step of press-fitting the material for the laser element mounting portion into the mold to form the heat sink body and projecting a part of the material for the laser element mounting portion from the surface of the heat sink body, and providing a connection terminal through hole in the heat sink body. And forming a through hole.
【0010】[0010]
【発明の実施の形態】以下図面を参照して本発明の実施
の形態例を詳細に説明する。図1は本発明の一実施形態
例を示す斜視図である。図において、21は半導体レー
ザ素子のヒートシンク、22は半導体レーザ素子、23
は半導体レーザ素子取付部、23aは半導体レーザ素子
取付部の突出部、23bは半導体レーザ素子取付部の埋
設部、24a,24bは接続端子、25はヒートシンク
本体、25a,25bは端子貫通孔、26は接地端子、
27a,27bは端子部、28a,28bは絶縁ガラ
ス、29は半導体レーザ素子取付部用の凹部ある。すな
わち、鉄よりなる板状のヒートシンク本体25には端子
貫通孔25a,25bが設けられると共に半導体レーザ
素子取付部用の凹部29が設けられる。前記半導体レー
ザ素子取付部用の凹部29には銅又は銅合金よりなる半
導体レーザ素子取付部23が植設される。この場合、前
記レーザ素子取付部23は、半導体レーザ素子取付部用
の凹部29に埋設された埋設部23bの直径がヒートシ
ンク本体25の表面より突出した突出部23aの直径よ
り大きく形成される。前記半導体レーザ素子取付部23
のヒートシンク本体7より突出した側面には半導体レー
ザ素子22が取付られる。前記端子貫通孔25a,25
bには接続端子24a,24bがそれぞれ対応して貫通
されると共に絶縁ガラス28a,28bにより気密に封
着される。前記接続端子24a,24bの上端部には端
子部27a,27bがそれぞれ対応して設けられ、この
端子部27a,27bは前記半導体レーザ素子22にワ
イヤボンティングにより接続される。接地端子26はヒ
ートシンク本体25の下面にろう付け、又は、抵抗溶接
等の方法で取付けられる。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a perspective view showing an embodiment of the present invention. In the figure, 21 is a heat sink of a semiconductor laser device, 22 is a semiconductor laser device, 23
Is a semiconductor laser device mounting portion, 23a is a projection of the semiconductor laser device mounting portion, 23b is a buried portion of the semiconductor laser device mounting portion, 24a and 24b are connection terminals, 25 is a heat sink body, 25a and 25b are terminal through holes, 26 Is the ground terminal,
27a and 27b are terminal portions, 28a and 28b are insulating glass, and 29 is a concave portion for a semiconductor laser element mounting portion. That is, the plate-shaped heat sink body 25 made of iron is provided with the terminal through holes 25a and 25b and the concave portion 29 for the semiconductor laser element mounting portion. A semiconductor laser device mounting portion 23 made of copper or a copper alloy is implanted in the concave portion 29 for the semiconductor laser device mounting portion. In this case, the laser element mounting portion 23 is formed such that the diameter of the embedded portion 23b embedded in the concave portion 29 for the semiconductor laser element mounting portion is larger than the diameter of the protruding portion 23a protruding from the surface of the heat sink body 25. The semiconductor laser element mounting part 23
The semiconductor laser element 22 is attached to a side surface protruding from the heat sink body 7. The terminal through holes 25a, 25
The connection terminals 24a and 24b respectively penetrate through b and are hermetically sealed with insulating glasses 28a and 28b. Terminal portions 27a and 27b are provided at upper ends of the connection terminals 24a and 24b, respectively, and the terminal portions 27a and 27b are connected to the semiconductor laser device 22 by wire bonding. The ground terminal 26 is attached to the lower surface of the heat sink body 25 by a method such as brazing or resistance welding.
【0011】このように、鉄よりなるヒートシンク本体
25の凹部29に銅又は銅合金よりなる半導体レーザ素
子取付部23が植設されるため、ヒートシンク本体25
にクラック等が発生することがなく、ヒートシンク本体
25の気密性を損なうことがなく、気密性を確実にする
ことができる。また、レーザ素子取付部23は、半導体
レーザ素子取付部用の凹部29に埋設された埋設部23
bの直径がヒートシンク本体25の表面より突出した突
出部23aの直径より大きく形成され、放熱効果の良い
銅を多く用いることができるため、放熱効果を向上する
ことができる。なお、ヒートシンク本体25に鉄を用い
ることにより、接続端子24a,24bを端子貫通孔2
5a,25bに絶縁ガラス28a,28bにより気密に
封着する際、良好に封着することができる。As described above, since the semiconductor laser element mounting portion 23 made of copper or copper alloy is implanted in the concave portion 29 of the heat sink body 25 made of iron, the heat sink body 25 is formed.
Cracks and the like do not occur, and the airtightness of the heat sink body 25 is not impaired, so that the airtightness can be ensured. In addition, the laser element mounting portion 23 has a buried portion 23 buried in the concave portion 29 for the semiconductor laser device mounting portion.
The diameter of b is formed larger than the diameter of the protruding portion 23a protruding from the surface of the heat sink body 25, and a large amount of copper having a good heat radiation effect can be used, so that the heat radiation effect can be improved. By using iron for the heat sink body 25, the connection terminals 24a and 24b can be connected to the terminal through-holes 2.
When air-tightly sealing the insulating films 5a and 25b with the insulating glasses 28a and 28b, they can be sealed well.
【0012】図2(a)〜(e),(b′)〜(e′)
及び図3(f)〜(j),(f′)は本発明に係る半導
体レーザ素子のヒートシンク製造方法の一例を示す平面
図((a)〜(j))及び拡大断面図((b′)〜
(f′))である。すなわち、先ず図2(a)の工程に
おいて、細長い鉄板30の両側縁部近傍にそれぞれパイ
ロット穴31及び第1の窓穴32をプレス加工により設
ける。次に図2(b),(b′)の工程において、前記
第1の窓穴32の間に半導体レーザ素子取付部用の凹部
29をプレス加工により設ける。次に図2(c),
(c′)の工程において、前記第1の窓穴32及び凹部
29を挟むようにして第2の窓穴33をプレス加工によ
り設ける。次に図2(d),(d′)の工程において、
前記半導体レーザ素子取付部用の凹部29の内部に半導
体レーザ素子取付部用の銅部材34を圧入する。この場
合、銅部材34は凹部29の内部容積より僅かに少なく
する。次に図2(e),(e′)の工程において、前記
第1の窓穴32及び第2の窓穴33で囲まれた部分の上
面が平坦になるようにプレス加工する。この場合、凹部
29の開口周縁部が銅部材34の上面周縁部に被さるよ
うになり、銅部材34が鉄板30によりカシメられる。
次に図3(f),(f′)の工程において、前記第1の
窓穴32及び第2の窓穴33で囲まれた部分の上面が図
示しない金型に圧入されるようにプレス加工する。この
場合、加工によりヒートシンク本体25が円形に残され
るように周囲が薄くプレス加工され、かつ、銅部材34
の一部がヒートシンク本体25の上面より突出されて半
導体レーザ素子取付部23が形成される。この半導体レ
ーザ素子取付部23は凹部29に埋設された埋設部23
bの直径がヒートシンク本体25の表面より突出した突
出部23aの直径より大きく形成される。次に図3
(g)の工程において、前記ヒートシンク本体25の上
面に半導体レーザ素子取付部23近傍から除々に深くな
るような傾斜凹部35をプレス加工により形成する。次
に図3(h)の工程において、前記ヒートシンク本体2
5に端子貫通孔25a,25bをプレス加工により形成
する。次に図3(i)の工程において、前記ヒートシン
ク本体25の周縁部に切り欠き部36を設けるようにプ
レス加工して所定の形状に形成する。次に図3(j)の
工程において、前記ヒートシンク本体25をプレス加工
により抜き落とす。FIGS. 2 (a) to 2 (e) and 2 (b ') to 2 (e').
3 (f) to 3 (j) and 3 (f ') are plan views ((a) to (j)) and enlarged cross-sectional views ((b') showing an example of a method for manufacturing a heat sink for a semiconductor laser device according to the present invention. ) ~
(F ')). That is, first, in the step of FIG. 2A, a pilot hole 31 and a first window hole 32 are provided near both side edges of the elongated iron plate 30 by press working. Next, in the steps shown in FIGS. 2B and 2B, a recess 29 for mounting a semiconductor laser element is provided between the first window holes 32 by press working. Next, FIG.
In the step (c ′), a second window hole 33 is formed by pressing so as to sandwich the first window hole 32 and the concave portion 29. Next, in the steps of FIGS. 2D and 2D,
A copper member 34 for a semiconductor laser element attachment is press-fitted into the recess 29 for the semiconductor laser element attachment. In this case, the copper member 34 is slightly smaller than the internal volume of the recess 29. Next, in the steps of FIGS. 2E and 2E ', press working is performed so that the upper surface of the portion surrounded by the first window hole 32 and the second window hole 33 becomes flat. In this case, the periphery of the opening of the recess 29 covers the periphery of the upper surface of the copper member 34, and the copper member 34 is caulked by the iron plate 30.
Next, in the steps shown in FIGS. 3F and 3F, press working is performed so that the upper surface of the portion surrounded by the first window hole 32 and the second window hole 33 is pressed into a mold (not shown). I do. In this case, the periphery is thinly pressed so as to leave the heat sink body 25 in a circular shape by processing, and the copper member 34 is pressed.
Are protruded from the upper surface of the heat sink body 25 to form the semiconductor laser element mounting portion 23. The semiconductor laser device mounting portion 23 is a buried portion 23 buried in a concave portion 29.
The diameter b is larger than the diameter of the protruding portion 23 a protruding from the surface of the heat sink body 25. Next, FIG.
In the step (g), an inclined concave portion 35 is formed on the upper surface of the heat sink main body 25 by press working so as to gradually become deeper from the vicinity of the semiconductor laser device mounting portion 23. Next, in the step of FIG.
5, through holes 25a and 25b are formed by press working. Next, in the step of FIG. 3 (i), the heat sink body 25 is formed into a predetermined shape by pressing so as to provide a notch portion 36 at the peripheral edge portion. Next, in the step of FIG. 3 (j), the heat sink body 25 is pulled out by press working.
【0013】図2(a)〜(e),(b″)〜(e″)
及び図3(f)〜(j),(f″)は本発明に係る半導
体レーザ素子のヒートシンク製造方法の他の例を示す平
面図((a)〜(j))及び拡大断面図((b″)〜
(f″))である。すなわち、先ず図2(a)の工程に
おいて、細長い鉄板30の両側縁部近傍にそれぞれパイ
ロット穴31及び第1の窓穴32をプレス加工により設
ける。次に図2(b),(b″)の工程において、前記
第1の窓穴32の間に半導体レーザ素子取付部用の貫通
孔29′をプレス加工により設ける。次に図2(c),
(c″)の工程において、前記第1の窓穴32及び貫通
孔29′を挟むようにして第2の窓穴33をプレス加工
により設ける。次に図2(d),(d″)の工程におい
て、前記半導体レーザ素子取付部用の貫通孔29′の内
部に半導体レーザ素子取付部用の銅部材34′を圧入す
る。この場合、銅部材34′は貫通孔29′の内部容積
より僅かに少なくする。次に図2(e),(e″)の工
程において、前記第1の窓穴32及び第2の窓穴33で
囲まれた部分の上面が平坦になるようにプレス加工す
る。この場合、貫通孔29′の開口周縁部が銅部材3
4′の上面周縁部に被さるようになり、銅部材34′が
鉄板30によりカシメられる。次に図3(f),
(f″)の工程において、前記第1の窓穴32及び第2
の窓穴33で囲まれた部分の上面が図示しない金型に圧
入されるようにプレス加工する。この場合、加工により
ヒートシンク本体25が円形に残されるように周囲が薄
くプレス加工され、かつ、銅部材34′の一部がヒート
シンク本体25の上面より突出されて半導体レーザ素子
取付部23′が形成される。この半導体レーザ素子取付
部23′は貫通孔29′に埋設された埋設部23′bの
直径がヒートシンク本体25の表面より突出した突出部
23′aの直径より大きく形成される。次に図3(g)
の工程において、前記ヒートシンク本体25の上面に半
導体レーザ素子取付部23′近傍から除々に深くなるよ
うな傾斜凹部35をプレス加工により形成する。次に図
3(h)の工程において、前記ヒートシンク本体25に
端子貫通孔25a,25bをプレス加工により形成す
る。次に図3(i)の工程において、前記ヒートシンク
本体25の周縁部に切り欠き部36を設けるようにプレ
ス加工して所定の形状に形成する。次に図3(j)の工
程において、前記ヒートシンク本体25をプレス加工に
より抜き落とす。FIGS. 2 (a) to 2 (e) and 2 (b ") to 2 (e")
3 (f) to 3 (j) and 3 (f ″) are plan views ((a) to (j)) and enlarged sectional views (((a) to (j)) illustrating another example of a method for manufacturing a heat sink for a semiconductor laser device according to the present invention. b ") ~
(F ″)) In other words, first, in the step of FIG. 2A, a pilot hole 31 and a first window hole 32 are formed near both side edges of the elongated iron plate 30 by press working, respectively. In the steps (b) and (b ″), a through hole 29 ′ for a semiconductor laser element mounting portion is provided between the first window holes 32 by press working. Next, FIG.
In the step (c ″), a second window hole 33 is formed by press working so as to sandwich the first window hole 32 and the through hole 29 ′. Next, in the steps of FIGS. Then, a copper member 34 'for the semiconductor laser element mounting portion is press-fitted into the through hole 29' for the semiconductor laser device mounting portion. In this case, the copper member 34 'is slightly smaller than the internal volume of the through hole 29'. 2 (e) and 2 (e ″), press processing is performed so that the upper surface of the portion surrounded by the first window hole 32 and the second window hole 33 becomes flat. The periphery of the opening of the through hole 29 ′ is the copper member 3.
The copper member 34 ′ is swaged by the iron plate 30 so as to cover the periphery of the upper surface of 4 ′. Next, FIG.
In the step (f ″), the first window hole 32 and the second
Is pressed so that the upper surface of the portion surrounded by the window hole 33 is pressed into a mold (not shown). In this case, the periphery is thinly pressed so that the heat sink main body 25 remains circular by processing, and a part of the copper member 34 'is projected from the upper surface of the heat sink main body 25 to form the semiconductor laser element mounting portion 23'. Is done. In the semiconductor laser element mounting portion 23 ', a diameter of a buried portion 23'b buried in the through hole 29' is formed larger than a diameter of a protruding portion 23'a protruding from the surface of the heat sink body 25. Next, FIG.
In the step (3), an inclined concave portion 35 is formed on the upper surface of the heat sink main body 25 by press working so as to gradually become deeper from the vicinity of the semiconductor laser element mounting portion 23 '. Next, in the step of FIG. 3H, terminal through holes 25a and 25b are formed in the heat sink body 25 by press working. Next, in the step of FIG. 3 (i), the heat sink body 25 is formed into a predetermined shape by pressing so as to provide a notch portion 36 at the peripheral edge portion. Next, in the step of FIG. 3 (j), the heat sink body 25 is pulled out by press working.
【0014】このように、本発明に係る半導体レーザ素
子のヒートシンク製造方法ではプレス加工により半導体
レーザ素子取付部23,23′を製造できるため、半導
体レーザ素子取付部23,23′を飛躍的に高精度に製
造することができると共に、製造が容易になり、飛躍的
にコストダウンになる。As described above, in the method for manufacturing a heat sink of a semiconductor laser device according to the present invention, since the semiconductor laser device mounting portions 23 and 23 'can be manufactured by press working, the semiconductor laser device mounting portions 23 and 23' can be dramatically increased. It can be manufactured with high accuracy, and is easy to manufacture, resulting in a dramatic cost reduction.
【0015】図4及び図5はそれぞれ本発明の変形例を
示す平面図である。図中、図1と同一部分に相当する部
分は同一符号を付してその説明を省略する。すなわち、
図4は外周形状が円形の一部に小さな波形部37を有す
る半導体レーザ素子取付部用の凹部291を設けた半導
体レーザ素子のヒートシンク本体251であり、図5は
外周形状が円形の一部に大きな波形部38を有する半導
体レーザ素子取付部用の凹部292を設けた半導体レー
ザ素子のヒートシンク本体252である。このように、
半導体レーザ素子取付部用の凹部に波形部を設けること
により、半導体レーザ素子取付部が回転することがな
く、しかも半導体レーザ素子取付部の密着度もよくな
る。FIGS. 4 and 5 are plan views each showing a modification of the present invention. In the figure, portions corresponding to the same portions as those in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted. That is,
FIG. 4 shows a heat sink body 251 of a semiconductor laser device in which a concave portion 291 for a semiconductor laser device mounting portion having a small waveform portion 37 in a part of a circular outer periphery is provided, and FIG. The heat sink main body 252 of the semiconductor laser device provided with a concave portion 292 for a semiconductor laser device mounting portion having a large waveform portion 38. in this way,
By providing the corrugated portion in the concave portion for the semiconductor laser device mounting portion, the semiconductor laser device mounting portion does not rotate, and the degree of adhesion of the semiconductor laser device mounting portion is improved.
【0016】[0016]
【発明の効果】以上述べたように本発明によれば、ヒー
トシンク本体部を確実に気密性にでき、かつ、放熱効果
を向上でき、しかも、プレス加工により半導体レーザ素
子取付部を製造できるため、半導体レーザ素子取付部を
飛躍的に高精度に製造することができると共に、製造が
容易になり、飛躍的にコストダウンになるレーザ素子の
ヒートシンク及びその製造方法を提供することができ
る。As described above, according to the present invention, the heat sink body can be reliably made airtight, the heat radiation effect can be improved, and the semiconductor laser element mounting portion can be manufactured by press working. It is possible to provide a heat sink for a laser element and a method for manufacturing the same, which can dramatically manufacture the semiconductor laser element mounting portion with high precision, facilitates the manufacture, and dramatically reduces the cost.
【図1】本発明の一実施形態例を示す斜視図である。FIG. 1 is a perspective view showing an embodiment of the present invention.
【図2】本発明に係る半導体レーザ素子のヒートシンク
製造方法例を示す平面図及び拡大断面図である。2A and 2B are a plan view and an enlarged cross-sectional view illustrating an example of a method for manufacturing a heat sink of a semiconductor laser device according to the present invention.
【図3】本発明に係る半導体レーザ素子のヒートシンク
製造方法例を示す平面図及び拡大断面図である。3A and 3B are a plan view and an enlarged cross-sectional view illustrating an example of a method for manufacturing a heat sink of a semiconductor laser device according to the present invention.
【図4】本発明の変形例を示す平面図である。FIG. 4 is a plan view showing a modification of the present invention.
【図5】本発明の変形例を示す平面図である。FIG. 5 is a plan view showing a modification of the present invention.
【図6】従来の半導体レーザ素子のヒートシンクを示す
斜視図である。FIG. 6 is a perspective view showing a heat sink of a conventional semiconductor laser device.
21 半導体レーザ素子のヒートシンク 22 半導体レーザ素子 23 半導体レーザ素子取付部 23a 半導体レーザ素子取付部の突出部 23b 半導体レーザ素子取付部の埋設部 24a,24b 接続端子 25 ヒートシンク本体 25a,25b 端子貫通孔 26 接地端子 27a,27b 端子部 28a,28b 絶縁ガラス 29 半導体レーザ素子取付部用の凹部 DESCRIPTION OF SYMBOLS 21 Heat sink of semiconductor laser element 22 Semiconductor laser element 23 Semiconductor laser element mounting part 23a Projection part of semiconductor laser element mounting part 23b Embedded part of semiconductor laser element mounting part 24a, 24b Connection terminal 25 Heat sink main body 25a, 25b Terminal through hole 26 Ground Terminals 27a, 27b Terminals 28a, 28b Insulating glass 29 Recess for mounting semiconductor laser element
Claims (3)
続端子貫通孔が設けられた板状のヒートシンク本体と、 このヒートシンク本体の凹部に一部が埋設されヒートシ
ンク本体表面より突出して設けられたレーザ素子取付部
とを具備し、 前記レーザ素子取付部は、ヒートシンク本体凹部の埋設
部分の直径がヒートシンク本体表面より突出した部分の
直径より大きく形成されることを特徴とするレーザ素子
のヒートシンク。1. A plate-shaped heat sink body provided with a concave portion on its surface and a plurality of connection terminal through holes, and a laser partially embedded in the concave portion of the heat sink body and provided so as to protrude from the surface of the heat sink main body. A heat sink for the laser device, wherein the laser device mounting portion is formed such that a diameter of a buried portion of the heat sink main body concave portion is larger than a diameter of a portion protruding from the heat sink main body surface.
する凹部形成工程と、 この凹部形成工程で形成された凹部にレーザ素子取付部
用材料を圧入する圧入工程と、 この圧入工程の後、前記レーザ素子取付部用材料とヒー
トシンク本体部の表面が平坦になるように圧縮する圧縮
工程と、 この圧縮工程の後、前記ヒートシンク本体部及びレーザ
素子取付部用材料を金型に圧入してヒートシンク本体部
を成型すると共にレーザ素子取付部用材料の一部をヒー
トシンク本体表面より突出する成型工程と、 前記ヒートシンク本体に接続端子貫通孔を設ける貫通孔
形成工程とを具備することを特徴とするレーザ素子のヒ
ートシンク製造方法。2. A recess forming step of forming a recess in the plate-shaped heat sink main body, a press-fitting step of press-fitting a laser element mounting portion material into the recess formed in the recess forming step, and after the press-fitting step, A compression step of compressing the material of the laser element mounting portion and the surface of the heat sink body so as to be flat; and, after the compression step, press-fitting the material of the heat sink body and the material of the laser element mounting portion into a mold to heat sink. A laser comprising: a molding step of molding a main body part and projecting a part of a material for a laser element mounting part from a surface of a heat sink main body; and a through hole forming step of providing a connection terminal through hole in the heat sink main body. A method for manufacturing a heat sink for an element.
成する貫通孔形成工程と、 この貫通孔形成工程で形成された貫通孔にレーザ素子取
付部用材料を圧入する圧入工程と、 この圧入工程の後、前記レーザ素子取付部用材料とヒー
トシンク本体部の表面が平坦になるように圧縮する圧縮
工程と、 この圧縮工程の後、前記ヒートシンク本体部及びレーザ
素子取付部用材料を金型に圧入してヒートシンク本体部
を成型すると共にレーザ素子取付部用材料の一部をヒー
トシンク本体表面より突出する成型工程と、 前記ヒートシンク本体に接続端子貫通孔を設ける貫通孔
形成工程とを具備することを特徴とするレーザ素子のヒ
ートシンク製造方法。3. A through-hole forming step of forming a through-hole in a plate-shaped heat sink body, a press-in step of press-fitting a laser element mounting material into the through-hole formed in the through-hole forming step, After the step, a compression step of compressing the laser element mounting portion material and the surface of the heat sink body so that the surfaces thereof become flat, and after the compression step, the heat sink body portion and the laser element mounting portion material are molded into a mold. A press-fitting step of molding the heat sink body and projecting a part of the material for the laser element mounting portion from the surface of the heat sink body; and a through hole forming step of providing connection terminal through holes in the heat sink body. A method for manufacturing a heat sink for a laser element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10010441A JPH11214796A (en) | 1998-01-22 | 1998-01-22 | Heat sink for laser device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10010441A JPH11214796A (en) | 1998-01-22 | 1998-01-22 | Heat sink for laser device and method of manufacturing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11214796A true JPH11214796A (en) | 1999-08-06 |
Family
ID=11750253
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10010441A Pending JPH11214796A (en) | 1998-01-22 | 1998-01-22 | Heat sink for laser device and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11214796A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012060044A (en) * | 2010-09-13 | 2012-03-22 | Shinko Electric Ind Co Ltd | Stem for semiconductor package and method for manufacturing stem for semiconductor package |
-
1998
- 1998-01-22 JP JP10010441A patent/JPH11214796A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012060044A (en) * | 2010-09-13 | 2012-03-22 | Shinko Electric Ind Co Ltd | Stem for semiconductor package and method for manufacturing stem for semiconductor package |
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