JPH11220162A - LED array head - Google Patents
LED array headInfo
- Publication number
- JPH11220162A JPH11220162A JP1922498A JP1922498A JPH11220162A JP H11220162 A JPH11220162 A JP H11220162A JP 1922498 A JP1922498 A JP 1922498A JP 1922498 A JP1922498 A JP 1922498A JP H11220162 A JPH11220162 A JP H11220162A
- Authority
- JP
- Japan
- Prior art keywords
- light
- led
- substrate
- light emitting
- shielding film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
- Facsimile Heads (AREA)
- Led Devices (AREA)
Abstract
(57)【要約】
【課題】 突出構造のＬＥＤ発光部の側面からの側面光
を抑制するための金属製の遮光膜を容易に形成できるよ
うにする。
【解決手段】 ＬＥＤ発光部２の側面２ｂ自体を全周に
渡って順メサ形状に形成することで、側面２ｂに対して
金属製の遮光膜４を蒸着法やスパッタリング法などによ
り形成する際に、ヘッド基板１を斜めに傾けたりするこ
となく基板面垂直方向から直接的に推積させて形成する
ことができる。これにより、側面光を抑制するための構
造を容易に製造できる。また、遮光膜４の材料とＬＥＤ
発光部２に対する個別電極５ａの電極材料とが同じであ
れば、両者を同時に形成することもできる。
(57) Abstract: A metal light-shielding film for suppressing side light from the side of an LED light emitting portion having a protruding structure can be easily formed. SOLUTION: When a side surface 2b of an LED light emitting part 2 is formed in a regular mesa shape over the entire circumference, a light shielding film 4 made of metal is formed on the side surface 2b by a vapor deposition method, a sputtering method, or the like. In addition, the head substrate 1 can be formed by being directly deposited from the direction perpendicular to the substrate surface without tilting the head substrate 1 obliquely. Thus, a structure for suppressing side light can be easily manufactured. The material of the light shielding film 4 and the LED
If the electrode material of the individual electrode 5a for the light emitting unit 2 is the same, both can be formed simultaneously.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ＬＥＤアレイプリ
ンタ用の光源に用いられるＬＥＤアレイヘッドに関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an LED array head used as a light source for an LED array printer.
【０００２】[0002]
【従来の技術】電子写真プロセスを利用したプリンタと
して、光源にＬＥＤアレイヘッドを用いたＬＥＤアレイ
プリンタはレーザラスタ方式のレーザプリンタに比べて
振動や熱による光学系の変形に強いという利点を持つ。2. Description of the Related Art As a printer utilizing an electrophotographic process, an LED array printer using an LED array head as a light source has an advantage that it is more resistant to deformation of an optical system due to vibration and heat than a laser raster type laser printer.
【０００３】図４はこのようなＬＥＤアレイプリンタの
基本構成の概略を示すもので、ＬＥＤアレイヘッド１０
０から出射された光を等倍結像光学系１０１を介してド
ラム状の感光体１０２表面に集光させることにより感光
面を露光して静電潜像を形成する構成とされている。FIG. 4 schematically shows the basic structure of such an LED array printer.
The light emitted from 0 is condensed on the surface of a drum-shaped photosensitive member 102 via a 1: 1 imaging optical system 101 to expose the photosensitive surface to form an electrostatic latent image.
【０００４】このようなＬＥＤアレイプリンタに用いら
れるＬＥＤアレイヘッド１００としては、例えば、図５
に示すように、ヘッド基板として安価なシリコン基板１
１０に化合物半導体を成長させることで、シリコン基板
１１０表面に対して突出したＬＥＤ発光部１１１をアレ
イ状に形成するようにしたものが提案されている（例え
ば、特開平９−４５９５５号公報参照）。このようなＬ
ＥＤアレイヘッド１００において、シリコン基板１１０
上の個別電極１１２と共通電極１１３とに対して電気的
に接続された複数の半導体層からなる各ＬＥＤ発光部１
１１からの発光は、紙面表裏方向に取り出され、例え
ば、前述の等倍結像光学系１０１を介して感光体１０２
上に結像される。As an LED array head 100 used in such an LED array printer, for example, FIG.
As shown in the figure, an inexpensive silicon substrate 1 is used as a head substrate.
An LED light emitting portion 111 protruding from the surface of the silicon substrate 110 is formed in an array by growing a compound semiconductor on the surface of the silicon substrate 110 (see, for example, JP-A-9-45555). . Such L
In the ED array head 100, the silicon substrate 110
Each LED light emitting unit 1 composed of a plurality of semiconductor layers electrically connected to the upper individual electrode 112 and the common electrode 113
Light emitted from the light source 11 is extracted in the front and back directions on the paper surface, and, for example, is transferred to the photosensitive member 102 via the above-described 1 × imaging optical system 101.
Imaged on top.
【０００５】この際、シリコン基板１１０から突出形成
されたＬＥＤ発光部１１１にあってその側面から基板面
内方向に対しても側面光として放射されるので、隣接す
るＬＥＤ発光部１１１や個別電極１１２や共通電極１１
３、或いは、個別電極１１２に対するボンディングワイ
ヤ（図示せず）等により反射されて、恰もそれらの各点
が発光点であるかの如く、感光体１０２に向けて望まし
くない雑音成分の発光パターンとして照射されてしま
う。このような雑音成分の発光パターンによる露光を受
けた部分にも潜像が形成され、現像後にはトナー像とし
て紙に転写されるので、出力画像上、線幅ムラなどの画
質劣化を引き起こす一因となる。At this time, since the LED light emitting portion 111 protruding from the silicon substrate 110 is radiated from the side surface also as the side light in the in-plane direction of the substrate, the adjacent LED light emitting portion 111 and the individual electrode 112 are emitted. And common electrode 11
3, or reflected by a bonding wire (not shown) or the like to the individual electrode 112, and irradiates the photosensitive member 102 as a light emission pattern of an undesirable noise component as if each of those points is a light emission point. Will be done. A latent image is also formed on a portion exposed to the light emission pattern of such a noise component, and is transferred to a paper as a toner image after development, which causes image quality deterioration such as line width unevenness on an output image. Becomes
【０００６】このようなことから、突出構造のＬＥＤ発
光部から放射される望ましくない側面光の影響を除去す
る構造として、ＬＥＤ発光部の側面部分に遮光膜を設け
るようにしたものが、例えば、特開平６−２５２４４０
号公報により提案されている。図６によりその構造例を
簡単に説明する。図６は１つのＬＥＤ発光部１１１のみ
を示すもので、シリコン基板１１０上に４層の半導体層
１１４ａ，１１４ｂ，１１４ｃ，１１４ｄを成長積層さ
せることにより突出した形状に形成されており、上面側
に形成した個別電極１１２とシリコン基板１１０下面側
に形成した共通電極１１３との間に電流を流すことによ
りＬＥＤ発光部１１１が発光する。ここで、本来望まれ
る発光光は、ＬＥＤ発光部１１１の上面１１１ａから取
り出される光であるが、ＬＥＤ発光部１１１の側面１１
１ｂも発光するので、保護膜１１５を介して反射膜（遮
光膜）１１６を形成することにより側面光を抑制する、
という構造である。For this reason, as a structure for removing the influence of undesired side light radiated from the LED light-emitting portion having a protruding structure, a structure in which a light-shielding film is provided on the side surface of the LED light-emitting portion has been proposed. JP-A-6-252440
Has been proposed. An example of the structure will be briefly described with reference to FIG. FIG. 6 shows only one LED light emitting portion 111, which is formed in a protruding shape by growing and stacking four semiconductor layers 114a, 114b, 114c, 114d on a silicon substrate 110, and is formed on the upper surface side. When an electric current flows between the formed individual electrode 112 and the common electrode 113 formed on the lower surface side of the silicon substrate 110, the LED light emitting unit 111 emits light. Here, the originally desired emitted light is light extracted from the upper surface 111a of the LED light emitting unit 111,
1b also emits light, so that a reflective film (light-shielding film) 116 is formed via a protective film 115 to suppress side light.
It is a structure called.
【０００７】[0007]
【発明が解決しようとする課題】このような遮光構造に
関して、反射膜１１６が光の一部を透過させる構造の場
合には、透過した光が微弱であっても感光体１０２面上
の露光パターンに悪影響を及ぼすので、反射膜１１６と
しては酸化物のような透明な材料ではなく薄膜であって
も遮光が十分である材料、具体的には、金属材料を用い
る必要がある。With respect to such a light-shielding structure, when the reflection film 116 has a structure that transmits a part of the light, even if the transmitted light is weak, the exposure pattern on the surface of the photoreceptor 102 is reduced. Therefore, it is necessary to use a material that is sufficiently light-shielded even if it is a thin film, specifically a metal material, instead of a transparent material such as an oxide.
【０００８】ここに、金属反射膜を形成する方法として
は、蒸着法やスパッタリング法のように、成膜方向に異
方性を有する手法が普通である。よって、成膜すべきＬ
ＥＤ発光部１１１の側面１１１ｂが垂直であったり逆メ
サ形状のオーバハングがあると（図６の場合も、ＬＥＤ
発光部１１１のアレイ方向の側面形状はくの字状くびれ
形状或いは逆メサ形状となっている）、基板を傾けて推
積させる等の成膜工程を採らざるを得ず、ＬＥＤアレイ
ヘッドの製造工程が複雑化してしまう問題がある。Here, as a method of forming the metal reflection film, a method having anisotropy in a film forming direction, such as a vapor deposition method and a sputtering method, is generally used. Therefore, L to be formed
If the side surface 111b of the ED light emitting unit 111 is vertical or has an overhang in the shape of an inverted mesa (in the case of FIG.
The side surface shape of the light emitting portion 111 in the array direction is a U-shaped constriction shape or an inverted mesa shape), and a film forming process such as tilting and accumulating the substrate has to be adopted, and the LED array head is manufactured. There is a problem that the process becomes complicated.
【０００９】そこで、本発明は、突出構造のＬＥＤ発光
部の側面からの側面光を抑制するための金属製の遮光膜
を容易に形成し得るＬＥＤアレイヘッドを提供すること
を目的とする。Accordingly, an object of the present invention is to provide an LED array head which can easily form a metal light-shielding film for suppressing side light from the side of an LED light emitting portion having a protruding structure.
【００１０】[0010]
【課題を解決するための手段】請求項１記載の発明は、
ヘッド基板から突出させて複数個のＬＥＤ発光部がアレ
イ状に形成され、各ＬＥＤ発光部の側面に対してその側
面から基板面内方向に放射される側面光を遮断させる遮
光膜を設けたＬＥＤアレイヘッドにおいて、金属製の前
記遮光膜が形成される各ＬＥＤ発光部の側面全周が順メ
サ形状に形成されている。従って、ＬＥＤ発光部の側面
自体が全周に渡って順メサ形状に形成されているので、
側面に対して金属製の遮光膜を蒸着法やスパッタリング
法などにより形成する際に、基板を斜めに傾けたりする
ことなく基板面垂直方向から直接的に推積させて形成す
ることができ、側面光を抑制するための構造物の製造が
容易となる。特に、遮光膜の材料とＬＥＤ発光部に対す
る電極材料とが同じ場合には、両者を同時に形成し得る
ことにもなる。According to the first aspect of the present invention,
An LED in which a plurality of LED light-emitting portions are formed in an array so as to protrude from the head substrate, and a light-shielding film is provided on a side surface of each LED light-emitting portion to block side light emitted from the side surface in a substrate inward direction. In the array head, the entire periphery of the side surface of each LED light emitting portion on which the metal light shielding film is formed is formed in a regular mesa shape. Therefore, since the side surface itself of the LED light emitting portion is formed in a forward mesa shape over the entire circumference,
When forming a metal light-shielding film on the side surface by vapor deposition or sputtering, it can be formed by directly depositing the substrate from the vertical direction without tilting the substrate obliquely. Manufacture of a structure for suppressing light is facilitated. In particular, when the material of the light-shielding film is the same as the electrode material for the LED light emitting unit, both can be formed simultaneously.
【００１１】請求項２記載の発明は、ヘッド基板から突
出させて複数個のＬＥＤ発光部がアレイ状に形成され、
各ＬＥＤ発光部の側面に対してその側面から基板面内方
向に放射される側面光を遮断させる遮光膜を設けたＬＥ
Ｄアレイヘッドにおいて、金属製の前記遮光膜が形成さ
れる各ＬＥＤ発光部の側面全周が充填された埋込剤によ
り順メサ形状に形成されている。従って、ＬＥＤ発光部
の側面自体は垂直面や逆メサ形状であっても充填された
埋込剤により全周に渡って順メサ形状に形成されている
ので、側面に対して金属製の遮光膜を蒸着法やスパッタ
リング法などにより形成する際に、基板を斜めに傾けた
りすることなく基板面垂直方向から直接的に推積させて
形成することができ、側面光を抑制するための構造物の
製造が容易となる。特に、遮光膜の材料とＬＥＤ発光部
に対する電極材料とが同じ場合には、両者を同時に形成
し得ることにもなる。According to a second aspect of the present invention, a plurality of LED light emitting portions are formed in an array so as to protrude from the head substrate.
LE provided with a light-shielding film for blocking the side light emitted from the side surface of the LED light emitting portion in the in-plane direction of the substrate from the side surface.
In the D-array head, the entire side surface of each of the LED light-emitting portions on which the metal light-shielding film is formed is formed in a regular mesa shape by the filling agent filled. Therefore, even if the side surface itself of the LED light emitting portion is formed in a regular mesa shape over the entire periphery by the filled embedding agent even if the side surface itself is a vertical surface or an inverted mesa shape, a metal light shielding film is formed on the side surface. When forming by vapor deposition method or sputtering method, it can be formed by directly accumulating from the vertical direction of the substrate surface without tilting the substrate obliquely. Manufacturing becomes easy. In particular, when the material of the light-shielding film is the same as the electrode material for the LED light emitting unit, both can be formed simultaneously.
【００１２】[0012]
【発明の実施の形態】本発明の第一の実施の形態を図１
に基づいて説明する。本実施の形態のＬＥＤアレイヘッ
ドにおいては、ヘッド基板としてＧａＡｓ基板１が用い
られている。このようなＧａＡｓ基板１の表面には半導
体を成長させることにより複数個のＬＥＤ発光部２が突
出構造としてアレイ状に形成されている（紙面、左右方
向がアレイ方向である）。このようなＬＥＤ発光部２の
上面２ａの一部及び側面２ｂ上には絶縁膜として機能す
るＳｉＯ2 膜３が形成され、かつ、ＳｉＯ2 膜３が形成
された側面２ｂ部分には金製の遮光膜４が形成されてい
る。また、上面２ａにてＬＥＤ発光部２の一部に直接接
する部分には金製の個別電極５ａが形成され、ＧａＡｓ
基板１の裏面側には金製の共通電極５ｂが形成されてい
る。個別電極５ａに対してはボンディングパッド及びボ
ンディングワイヤが電気的に接続されている。FIG. 1 shows a first embodiment of the present invention.
It will be described based on. In the LED array head of the present embodiment, a GaAs substrate 1 is used as a head substrate. On the surface of such a GaAs substrate 1, a plurality of LED light emitting portions 2 are formed in an array as a protruding structure by growing a semiconductor (the paper surface, the horizontal direction is the array direction). Such part of the upper surface 2a of the LED light emitting part 2 and is on the side surface 2b is formed SiO 2 film 3 functioning as an insulating film, and, on the side portion 2b of the SiO 2 film 3 is formed gold A light shielding film 4 is formed. In addition, a gold individual electrode 5a is formed on a portion of the upper surface 2a which is in direct contact with a part of the LED light emitting section 2, and the GaAs
A common electrode 5b made of gold is formed on the back side of the substrate 1. A bonding pad and a bonding wire are electrically connected to the individual electrode 5a.
【００１３】このような構成の下、個別電極５ａ・共通
電極５ｂ間に電流を流すと、ＬＥＤ発光部２が発光し、
上面２ａからの発光光が感光体側に向けて放射される。
このとき、側面２ｂからの側面光の放射もあるが、側面
２ｂに対しては金製の遮光膜４が形成されているので反
射遮光され、側面光による悪影響が防止される。Under such a configuration, when a current flows between the individual electrode 5a and the common electrode 5b, the LED light emitting section 2 emits light,
Light emitted from the upper surface 2a is emitted toward the photoconductor.
At this time, side light is emitted from the side surface 2b. However, since the light shielding film 4 made of gold is formed on the side surface 2b, the side surface 2b is reflected and shielded, so that adverse effects due to the side light are prevented.
【００１４】ここに、本実施の形態においては、ＧａＡ
ｓ基板１上に成長形成された矩形状のＬＥＤ発光部２に
対して等方エッチングを施すことにより、その側面２ｂ
が全周に渡って順メサ形状に形成されている（図２
（ａ）参照）。よって、このようなＬＥＤ発光部２の側
面２ｂ上に金製の遮光膜４を成膜形成する際に、ＧａＡ
ｓ基板１面に垂直な方向から直接成膜することができる
ので、基板を斜めに傾けたりする必要はない。即ち、何
れも金製の個別電極５ａと遮光膜４とを図２（ｂ）に示
すように蒸着法とリフトオフ法とによりＬＥＤ発光部２
の上面２ａから側面２ｂ及び基板面上にかけて形成す
る。このとき、ＬＥＤ発光部２の側面２ｂが基板面内方
向全周に渡って順メサ形状に形成されているので、３面
分の遮光膜４に段切れを生じたり影（オーバハング）に
なる部分が生ずることなく良好かつ簡単に成膜すること
ができる。ここに、残りの１面分の側面２ｂの遮光は、
個別電極５ａによりなされる。特に、個別電極５ａと遮
光膜４とを同時に蒸着形成することができるので、製造
方法が一層簡便なものとなる。Here, in the present embodiment, GaAs
By performing isotropic etching on the rectangular LED light-emitting portion 2 grown and formed on the s-substrate 1, its side surface 2b
Are formed in a regular mesa shape over the entire circumference (FIG. 2).
(A)). Therefore, when the gold light shielding film 4 is formed on the side surface 2b of the LED light emitting unit 2, the GaAs
Since the film can be formed directly from a direction perpendicular to the surface of the s substrate 1, there is no need to tilt the substrate obliquely. That is, as shown in FIG. 2B, the individual electrodes 5a and the light-shielding film 4 made of gold are both formed by the LED light emitting unit 2 by the vapor deposition method and the lift-off method.
From the upper surface 2a to the side surface 2b and the substrate surface. At this time, since the side surface 2b of the LED light emitting portion 2 is formed in a forward mesa shape over the entire circumference in the in-plane direction of the substrate, portions of the light-shielding film 4 corresponding to three surfaces may be stepped or shadow (overhang). A good and simple film formation can be achieved without occurrence of the problem. Here, the light shielding of the side surface 2b for the remaining one surface is as follows.
This is performed by the individual electrode 5a. In particular, since the individual electrode 5a and the light-shielding film 4 can be formed by vapor deposition at the same time, the manufacturing method is further simplified.
【００１５】このように、本実施の形態によれば、各Ｌ
ＥＤ発光部２の側面２ｂ自身を順メサ形状に形成したの
で、側面２ｂ部分に対して金製の遮光膜４を形成するに
当り、ＧａＡｓ基板１を傾けたりすることなくＧａＡｓ
基板１面に垂直な方向からの蒸着やスパッタリングによ
り直接成膜形成することができ、側面光を抑制するため
の構造を簡便な製造方法で形成できる。As described above, according to the present embodiment, each L
Since the side surface 2b of the ED light emitting unit 2 is formed in a forward mesa shape, the GaAs substrate 1 is not tilted when forming the gold light shielding film 4 on the side surface 2b.
A film can be formed directly by vapor deposition or sputtering from a direction perpendicular to the surface of the substrate 1, and a structure for suppressing side light can be formed by a simple manufacturing method.
【００１６】本発明の第二の実施の形態を図３に基づい
て説明する。前記実施の形態で示した部分と同一部分は
同一符号を用いて示し、説明も省略する。本実施の形態
のＬＥＤアレイヘッドでは、ＧａＡｓ基板１上に突出形
成された各ＬＥＤ発光部２に対して異方性エッチングを
施すことにより側面形状が形成されている。この場合、
紙面表裏方向には順メサ形状とし個別電極５ａに段切れ
が生じないようにＬＥＤアレイヘッドのアレイ方向を選
択すると（図６に示した従来構造がこれに相当する）、
アレイ方向におけるＬＥＤ発光部２の側面ｃは図３
（ａ）に示すような逆メサ形状（或いは、くの字状くび
れ形状）となる。このような基礎的な構造を前提とし
て、本実施の形態では、ＬＥＤ発光部２を含むＧａＡｓ
基板１の全面にＣＶＤ法により絶縁膜として機能するＳ
ｉＯ2 膜３が形成される（図３（ａ）参照）。このと
き、ＣＶＤ法のケミカルな効果により、逆メサ形状の側
面２ｃであっても全面的にＳｉＯ2 膜３が均等に形成さ
れる。続いて、ＳｉＯ2 膜３の表面にポリイミド６を塗
布することで、逆メサ形状部分に対してはこのポリイミ
ド６を順メサ形状となるように埋め込む（図３（ｂ）参
照）。これにより、ＬＥＤ発光部２の側面２ｃに対応す
る部分はポリイミド６を埋込剤として順メサ形状の側面
６ｃが形成されたと等価となる。この後、ＲＩＥ法でエ
ッチバックすることでＬＥＤ発光部２の上面２ａ上のポ
リイミド６を除去する（図３（ｃ）参照）。この後、何
れも金製の遮光膜４と個別電極５ａとを同時に表面側に
蒸着することにより成膜形成し、最後にＧａＡｓ基板１
の裏面側に共通電極５ｂを成膜形成することにより（図
３（ｄ）参照）、本実施の形態のＬＥＤアレイヘッドが
完成する。このような金製の遮光膜４を形成する際、Ｌ
ＥＤ発光部２の側面２ｃ自身は逆メサ形状であるがこの
部分にポリイミド６が埋め込まれて順メサ形状の側面６
ｃが形成されているので、実質的に前記実施の形態の場
合と同様に、遮光膜４に段切れを生じたり影（オーバハ
ング）になる部分が生ずることなく良好かつ簡単に成膜
することができる。また、本実施の形態の場合も、個別
電極５ａと遮光膜４とを同時に蒸着形成することができ
るので、製造方法が一層簡便なものとなる。A second embodiment of the present invention will be described with reference to FIG. The same parts as those described in the above embodiment are denoted by the same reference numerals, and description thereof will be omitted. In the LED array head of the present embodiment, the side surface shape is formed by performing anisotropic etching on each of the LED light emitting units 2 protrudingly formed on the GaAs substrate 1. in this case,
If the array direction of the LED array head is selected so as to form a forward mesa in the front and back direction of the paper and prevent the individual electrodes 5a from being cut off (the conventional structure shown in FIG. 6 corresponds to this).
The side surface c of the LED light emitting unit 2 in the array direction is shown in FIG.
An inverted mesa shape (or a U-shaped constriction shape) as shown in FIG. On the premise of such a basic structure, in the present embodiment, the GaAs
S functioning as an insulating film on the entire surface of the substrate 1 by CVD.
An iO 2 film 3 is formed (see FIG. 3A). At this time, due to the chemical effect of the CVD method, the SiO 2 film 3 is uniformly formed on the entire surface even on the side surface 2c having the inverted mesa shape. Subsequently, by applying polyimide 6 on the surface of the SiO 2 film 3, the polyimide 6 is buried in a reverse mesa shape portion so as to have a forward mesa shape (see FIG. 3B). Thus, the portion corresponding to the side surface 2c of the LED light emitting unit 2 is equivalent to the formation of the normally mesa-shaped side surface 6c using the polyimide 6 as an embedding agent. Thereafter, the polyimide 6 on the upper surface 2a of the LED light emitting unit 2 is removed by etching back by RIE (see FIG. 3C). Thereafter, a light shielding film 4 made of gold and an individual electrode 5a are simultaneously formed on the surface side by vapor deposition to form a film.
The LED array head of the present embodiment is completed by forming a film of the common electrode 5b on the back surface of the LED (see FIG. 3D). When forming such a gold light shielding film 4, L
The side surface 2c of the ED light emitting portion 2 has an inverted mesa shape.
Since c is formed, it is possible to form the light-shielding film 4 satisfactorily and easily without any step breakage or shadow (overhang) portion, as in the above-described embodiment. it can. Further, also in the case of the present embodiment, the individual electrode 5a and the light shielding film 4 can be simultaneously formed by vapor deposition, so that the manufacturing method is further simplified.
【００１７】このように、本実施の形態によれば、各Ｌ
ＥＤ発光部２の側面２ｃ自身は逆メサ形状であるがポリ
イミド６を埋め込むことで順メサ形状の側面６ｃを形成
しているので、側面６ｃ部分に対して金製の遮光膜４を
形成するに当り、ＧａＡｓ基板１を傾けたりすることな
くＧａＡｓ基板１面に垂直な方向からの蒸着やスパッタ
リングにより直接成膜形成することができ、側面光を抑
制するための構造を簡便な製造方法で形成できる。As described above, according to the present embodiment, each L
Although the side surface 2c of the ED light emitting unit 2 itself has an inverted mesa shape, the side surface 6c of the forward mesa shape is formed by embedding the polyimide 6, so that the gold light shielding film 4 is formed on the side surface 6c portion. It is possible to directly form a film by vapor deposition or sputtering from a direction perpendicular to the surface of the GaAs substrate 1 without tilting the GaAs substrate 1 and to form a structure for suppressing side light by a simple manufacturing method. .
【００１８】なお、本実施の形態は、ＬＥＤ発光部２の
側面２ｃが逆メサ形状に形成されている場合への適用例
として説明したが、垂直面形状の場合にも同様に適用す
ることができる。Although the present embodiment has been described as an example of application to the case where the side surface 2c of the LED light emitting section 2 is formed in an inverted mesa shape, the present embodiment can be similarly applied to the case of a vertical surface shape. it can.
【００１９】[0019]
【発明の効果】請求項１記載の発明によれば、ＬＥＤ発
光部の側面自体を全周に渡って順メサ形状に形成したの
で、側面に対して金属製の遮光膜を蒸着法やスパッタリ
ング法などにより形成する際に、基板を斜めに傾けたり
することなく基板面垂直方向から直接的に推積させて形
成することができ、側面光を抑制するための構造を容易
に製造することができ、さらには、遮光膜の材料とＬＥ
Ｄ発光部に対する電極材料とが同じ場合には、両者を同
時に形成することもできる。According to the first aspect of the present invention, the side surface itself of the LED light emitting portion is formed in a regular mesa shape over the entire circumference, so that a metal light-shielding film is formed on the side surface by vapor deposition or sputtering. When forming by, for example, the substrate can be formed by directly accumulating from the direction perpendicular to the substrate surface without tilting the substrate obliquely, and a structure for suppressing side light can be easily manufactured. Further, the material of the light shielding film and the LE
When the electrode material for the D light emitting unit is the same, both can be formed simultaneously.
【００２０】請求項２記載の発明によれば、ＬＥＤ発光
部の側面自体は垂直面や逆メサ形状であっても充填され
た埋込剤により全周に渡って順メサ形状となるように形
成したので、側面に対して金属製の遮光膜を蒸着法やス
パッタリング法などにより形成する際に、基板を斜めに
傾けたりすることなく基板面垂直方向から直接的に推積
させて形成することができ、側面光を抑制するための構
造を容易に製造することができ、さらには、遮光膜の材
料とＬＥＤ発光部に対する電極材料とが同じ場合には、
両者を同時に形成することもできる。According to the second aspect of the present invention, even if the side surface itself of the LED light emitting portion has a vertical surface or an inverted mesa shape, it is formed so as to have a regular mesa shape over the entire periphery by the filled embedding agent. Therefore, when forming a metal light-shielding film on the side surface by a vapor deposition method, a sputtering method, or the like, it is possible to directly form the substrate from the vertical direction of the substrate surface without tilting the substrate obliquely. It is possible to easily manufacture a structure for suppressing side light, and furthermore, when the material of the light shielding film and the electrode material for the LED light emitting unit are the same,
Both can be formed simultaneously.
【図１】本発明の第一の実施の形態を示す概略断面図で
ある。FIG. 1 is a schematic sectional view showing a first embodiment of the present invention.
【図２】ＬＥＤ発光部、遮光膜及び個別電極の製造工程
を順に示す平面図である。FIG. 2 is a plan view sequentially showing a manufacturing process of an LED light emitting unit, a light shielding film, and an individual electrode.
【図３】本発明の第二の実施の形態のＬＥＤアレイヘッ
ドをその製造工程順に示す概略断面図である。FIG. 3 is a schematic cross-sectional view showing an LED array head according to a second embodiment of the present invention in the order of manufacturing steps.
【図４】一般的なＬＥＤアレイプリンタの基本構成を示
す概略側面図である。FIG. 4 is a schematic side view showing a basic configuration of a general LED array printer.
【図５】従来のＬＥＤアレイヘッドの構成例を示す平面
図である。FIG. 5 is a plan view showing a configuration example of a conventional LED array head.
【図６】従来の遮光膜構造を示す断面図である。FIG. 6 is a cross-sectional view showing a conventional light-shielding film structure.
１ ヘッド基板 ２ ＬＥＤ発光部 ２ｂ 順メサ形状の側面 ４ 遮光膜 ６ 埋込剤 ６ｃ 順メサ形状の側面 DESCRIPTION OF SYMBOLS 1 Head board 2 LED light emitting part 2b Side surface of regular mesa shape 4 Light shielding film 6 Embedding agent 6c Side surface of regular mesa shape
Claims (2)
Ｄ発光部がアレイ状に形成され、各ＬＥＤ発光部の側面
に対してその側面から基板面内方向に放射される側面光
を遮断させる遮光膜を設けたＬＥＤアレイヘッドにおい
て、金属製の前記遮光膜が形成される各ＬＥＤ発光部の
側面全周が順メサ形状に形成されていることを特徴とす
るＬＥＤアレイヘッド。A plurality of LEs projecting from a head substrate;
An LED array head in which a D light-emitting portion is formed in an array and a light-shielding film is provided on a side surface of each LED light-emitting portion for blocking side light emitted from the side surface in an in-plane direction of the substrate. An LED array head, wherein the entire side surface of each LED light emitting portion on which a film is formed is formed in a forward mesa shape.
Ｄ発光部がアレイ状に形成され、各ＬＥＤ発光部の側面
に対してその側面から基板面内方向に放射される側面光
を遮断させる遮光膜を設けたＬＥＤアレイヘッドにおい
て、金属製の前記遮光膜が形成される各ＬＥＤ発光部の
側面全周が充填された埋込剤により順メサ形状に形成さ
れていることを特徴とするＬＥＤアレイヘッド。2. A plurality of LEs protruding from a head substrate.
An LED array head in which a D light-emitting portion is formed in an array and a light-shielding film is provided on a side surface of each LED light-emitting portion for blocking side light emitted from the side surface in an in-plane direction of the substrate. An LED array head, wherein the LED array head is formed in a regular mesa shape with a filling agent filled on the entire side surface of each LED light emitting portion on which a film is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1922498A JPH11220162A (en) | 1998-01-30 | 1998-01-30 | LED array head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1922498A JPH11220162A (en) | 1998-01-30 | 1998-01-30 | LED array head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11220162A true JPH11220162A (en) | 1999-08-10 |
Family
ID=11993412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1922498A Pending JPH11220162A (en) | 1998-01-30 | 1998-01-30 | LED array head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11220162A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002280601A (en) * | 2000-06-08 | 2002-09-27 | Showa Denko Kk | Semiconductor light emitting device |
| KR100565895B1 (en) | 2005-08-25 | 2006-03-31 | 에피밸리 주식회사 | Semiconductor light emitting device |
| JP2006269716A (en) * | 2005-03-24 | 2006-10-05 | Oki Data Corp | Semiconductor composite device, semiconductor composite device manufacturing method, LED head, and image forming apparatus |
| JP2007201121A (en) * | 2006-01-26 | 2007-08-09 | Citizen Electronics Co Ltd | Semiconductor light emitting device and manufacturing method thereof |
| JPWO2005093859A1 (en) * | 2004-03-29 | 2008-02-14 | 三洋電機株式会社 | Light emitting diode array, light emitting diode and printer head |
| JP2008153681A (en) * | 2008-01-23 | 2008-07-03 | Kyocera Corp | LED array |
| JP2010194928A (en) * | 2009-02-26 | 2010-09-09 | Kyocera Corp | Optical printer head, image forming apparatus, and method for driving optical printer head |
| JP2023099914A (en) * | 2022-01-04 | 2023-07-14 | 浜松ホトニクス株式会社 | Light-emitting element and reflective encoder |
-
1998
- 1998-01-30 JP JP1922498A patent/JPH11220162A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002280601A (en) * | 2000-06-08 | 2002-09-27 | Showa Denko Kk | Semiconductor light emitting device |
| JPWO2005093859A1 (en) * | 2004-03-29 | 2008-02-14 | 三洋電機株式会社 | Light emitting diode array, light emitting diode and printer head |
| JP4637097B2 (en) * | 2004-03-29 | 2011-02-23 | 三洋電機株式会社 | Light emitting diode array, light emitting diode and printer head |
| US7915623B2 (en) | 2004-03-29 | 2011-03-29 | Sanyo Electric Co., Ltd. | Light-emitting diode array, light-emitting diode, and printer head |
| JP2006269716A (en) * | 2005-03-24 | 2006-10-05 | Oki Data Corp | Semiconductor composite device, semiconductor composite device manufacturing method, LED head, and image forming apparatus |
| KR100565895B1 (en) | 2005-08-25 | 2006-03-31 | 에피밸리 주식회사 | Semiconductor light emitting device |
| JP2007201121A (en) * | 2006-01-26 | 2007-08-09 | Citizen Electronics Co Ltd | Semiconductor light emitting device and manufacturing method thereof |
| JP2008153681A (en) * | 2008-01-23 | 2008-07-03 | Kyocera Corp | LED array |
| JP2010194928A (en) * | 2009-02-26 | 2010-09-09 | Kyocera Corp | Optical printer head, image forming apparatus, and method for driving optical printer head |
| JP2023099914A (en) * | 2022-01-04 | 2023-07-14 | 浜松ホトニクス株式会社 | Light-emitting element and reflective encoder |
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