JPH1123483A - Semiconductor inspection apparatus and semiconductor inspection method - Google Patents

Abstract

[PROBLEMS] To provide a semiconductor inspection apparatus and a semiconductor inspection method capable of accurately and stably identifying a specific region of an object to be inspected to be inspected. SOLUTION: The epi-illumination 3 for irradiating the semiconductor chip 1 with illumination light, imaging means 6 for imaging the semiconductor chip 1, and one of the epi-illumination 3 and the imaging means 6 are provided to constitute the semiconductor chip 1. A filter means for transmitting a light wavelength region in which a difference in the amount of light reflected by each substance is large; and an image processing means for identifying a region made of a specific substance of the semiconductor chip from a captured image obtained by the imaging means. Was.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor inspection apparatus and a semiconductor inspection method for inspecting the appearance of a semiconductor using an image processing technique.

[0002]

2. Description of the Related Art FIG.
FIG. 1 is a configuration diagram showing a conventional semiconductor inspection device disclosed in Japanese Patent Publication No. 12-No. In the drawing, reference numeral 1 denotes a semiconductor chip to be inspected, 2 denotes oblique illumination using ring illumination or the like for illuminating the semiconductor chip 1 obliquely, 3 denotes epi-illumination for illuminating the semiconductor chip 1 from a vertical direction, Reference numeral 4 denotes a lens for condensing the light of the epi-illumination 3, reference numeral 5 denotes a half mirror for irradiating the illumination light from the epi-illumination 3 to the semiconductor chip 1, and reference numeral 6 denotes the semiconductor chip 1.
Means for obliquely illuminating, epi-illumination 3, and an optical head composed of an imaging means 6, 8 an XYZ stage for positioning the optical head 7 with respect to the semiconductor chip 1, and 9 an imaging means Image processing means 10 for analyzing the captured image taken from 6 is a gold wire bonded to the semiconductor chip 1.

FIG. 15 is a schematic diagram showing the semiconductor chip 1 shown in FIG. In the figure, 11 is a ball formed at the time of bonding, 12 is a pad made of aluminum or the like on an electrode surface, 13 is a stitch, and 14 is a lead.

FIG. 16 is a diagram showing a state in which the wire 10 is bonded to the pad 12. In the figure, 1
1a is a chamfer part, 11b is a collar part, and 15 is a capillary. A wire 1 which is a gold wire in the capillary 15
0 is inserted, and this capillary 15 is
The ball 1 is bonded by pressing against
1 is formed. The ball 11 is further divided into a chamfer portion 11a formed on the inner surface of the capillary tip and a flange portion 11b formed on the capillary tip flat portion.

FIG. 17 is a cross-sectional view of the ball 11, showing how illumination light is reflected. In the figure, A, B, C and D are illumination lights. FIG. 18 is a view showing a captured image when the ball 11 is imaged.

Next, the operation will be described. First of all,
A case in which an image of the ball 11 on the semiconductor chip 1 to be inspected is imaged and inspected will be described. The XYZ stage 8 is used to move the imaging means 6 to the position where the ball 11 exists, and the ball 1 is moved using the oblique illumination 2 and the epi-illumination 3.
1 is illuminated, focused, and the ball 11 is imaged.

At this time, the illumination light applied to the ball 11 is reflected as shown in FIG. First, the illumination light A applied to the chamfer section 11a
Since the surface of a is a mirror surface having an inclination, it is not reflected in the incident direction. Further, the illumination lights B and C applied to the collar portion 11b formed by the capillary tip flat portion are reflected in the incident direction because the surface of the collar portion 11b is flat. The illumination light E applied to the surface of the pad 12 is reflected in the incident direction, similarly to the illumination lights B and C.

Therefore, as shown in FIG. 18, the picked-up images of the ball 11 and the pad 12 become bright on the surface of the pad 12 where the reflected light returns and on the brim portion 11b, and the chamfer where the reflected light does not return. It becomes dark at the portion 11a. An appearance inspection is performed on this image by using the image processing means 9 to calculate the outer dimensions and the center coordinates of the ball 11.

Next, a description will be given of a case where the inspection is performed by imaging the stitch 13 in FIG. FIG.
FIG. 3 is a diagram showing a state in which a wire 10 is bonded to a lead 14. In the figure, 13a is a stitch inclined portion,
13b is a stitch flat portion. A wire 10 that is a gold wire is inserted into the capillary 15, and the capillary 15 is bonded by pressing the capillary 15 against a lead 14, thereby forming a stitch 13. Stitch 13
Are further divided into a stitch inclined portion 13a formed by a capillary tip inclined portion and a stitch flat portion 13b formed by a capillary tip flat portion.

FIG. 20 is a cross-sectional view of the stitch 13, showing the manner in which illumination light is reflected. In the figure, a, b, c, and d are illumination lights. FIG.
FIG. 4 is a diagram showing a captured image when the stitch 13 is captured.

The imaging is performed in the same steps as in the case of the ball 11. At this time, the illumination light applied to the stitch 13 is reflected as shown in FIG. The illumination light a applied to the wire 10 is not reflected in the incident direction because the wire 10 is inclined with respect to the optical axis. Also, stitch 13
Out of the illumination lights b and c, the illumination light b emitted to the stitch slope 13a formed by the tip slope of the capillary 15 is not reflected in the incident direction because of the slope. However, the illumination light c applied to the stitch flat portion 13b formed at the flat end portion of the capillary 15 is reflected in the incident direction because of the flat portion. The illumination light d applied to the lead 14 is similarly reflected in the incident direction.

For this reason, as shown in FIG. 20, the picked-up images of the stitch 13 and the lead 14 become dark at the wire 10 and the stitch slope 13a where the reflected light does not return, and the stitch flat portion where the reflected light returns. 13b and the lead 14 become bright. Appearance inspection such as calculation of the width, length, and center coordinates of the stitch 13 is performed on the image using the image processing means 9.

[0013]

For example, in an apparatus for inspecting a wire bonding state as shown in the above-mentioned conventional example, the whole ball 11 is separated from the pad 12 in order to measure the amount of displacement of the ball 11 with respect to the pad 12. Need to be identified. However, in the conventional example, FIG.
As shown in the photographed image shown in FIG. 1, both the brim portion 11b and the pad 12 are brightened by the reflected light and are difficult to distinguish.
It was difficult to accurately identify and inspect the entirety. Also, in the captured image of the stitch 13 in FIG. 20, the stitch flat portion 13b and the lead 14 are both brightened by the reflected light, so that it is difficult to distinguish them, and it is difficult to accurately identify and inspect the entire stitch 13. Was.

As described above, in the conventional semiconductor inspection apparatus and inspection method, it is difficult to identify a specific region to be extracted, and there is a problem that processing accuracy and stability are poor.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and a semiconductor inspection apparatus and a semiconductor which can accurately and stably identify a specific region from which an object to be inspected is to be extracted. The purpose is to obtain an inspection method.

[0016]

According to the present invention, there is provided a semiconductor inspection apparatus comprising: an inspection object made of a plurality of different substances; an illumination unit for irradiating the inspection object with illumination light; an imaging unit for imaging the inspection object; Filter means, provided in one of the illuminating means and the imaging means, which transmits a light wavelength region in which the difference in the amount of reflected light due to different substances of the inspection object on the light receiving surface of the imaging means is obtained by the imaging means. Image processing means for identifying a region of the inspection object made of a specific substance from the captured image.

The filter means can change a light wavelength range that can be transmitted by using a light modulation element.

Also, an object to be inspected made of a plurality of different substances, illuminating means for irradiating the object with illumination light, first imaging means and second imaging means for imaging the object to be inspected, first imaging The first filter means, which passes through a light wavelength region in which the difference in the amount of reflected light due to different substances of the test object provided on the light-receiving surface of the first imaging means is provided on the first imaging means, and the image is taken by the first imaging means. The image processing apparatus includes an image processing unit that identifies a specific region of the inspection object from a difference between the captured image and the captured image captured by the second imaging unit.

Further, the second image pickup means is a second filter means for transmitting a light wavelength region in which the difference between the amounts of reflected light of different substances of the object to be inspected is reduced on the light receiving surface of the second image pickup means. It is provided with.

In addition, the inspection object is provided on one of an inspection object made of a plurality of different substances, illumination means for irradiating the inspection object with illumination light, imaging means for imaging the inspection object, illumination means and imaging means, The first filter means that transmits in a light wavelength region where the difference in the amount of reflected light due to different substances of the test object increases on the light receiving surface of the imaging means, and the difference in the amount of reflected light due to the different substances of the test object is imaged A second filter unit that transmits a light wavelength region that becomes smaller on a light receiving surface of the unit, a filter switching unit that selects one of the first filter unit and the second filter unit, and a second filter unit that is selected by the filter switching unit. From the difference between the captured image captured via one filter means and the captured image captured via the second filter means selected by the filter switching means, the inspection object Those having an image processing means for identifying a particular area.

The illuminating means is a light source whose spectral distribution is concentrated in the wavelength region of the transmitted light of the filter means.

An inspection object made of a plurality of different substances, first and second illumination means for irradiating the inspection object with illumination light, imaging means for imaging the inspection object, first illumination The first filter means, which passes through a light wavelength region in which the difference in the amount of reflected light due to different substances of the object to be inspected provided on the light-receiving surface of the imaging means is provided, and the image is captured by the illumination light from the first illumination means. The image processing apparatus further includes image processing means for identifying a specific region of the inspection object from a difference between the captured image and a captured image captured by illumination light from the second illumination unit.

Further, the second illuminating means includes second filter means for transmitting a light wavelength region in which the difference in the amount of reflected light between different substances of the inspection object is small.

The first and second illumination means are light sources whose spectral distribution is concentrated in the wavelength region of the transmitted light of the filter means.

Further, the semiconductor inspection method according to the present invention
A step of irradiating an inspection object made of a plurality of different substances with illumination light in a light wavelength region in which a difference in the amount of reflected light by each of the different substances of the inspection object is large, and a step of imaging the inspection object And a step of identifying a region of the inspection object made of a specific substance from the obtained captured image.

A first irradiation step of irradiating the inspection object made of a plurality of different substances with illumination light; a first imaging step of imaging the inspection object with the illumination light from the first irradiation step;
A second irradiation step of irradiating the inspection object with illumination light in a light wavelength region in which the difference in the amount of light reflected by each of the different substances of the inspection object increases, and imaging the inspection object with the illumination light from the second irradiation step And a step of identifying a specific area of the inspection object by calculating a difference between the captured images obtained in the first and second imaging steps.

Further, a first irradiation of irradiating the inspection object made of a plurality of different substances with illumination light in a light wavelength region in which the difference in the amount of light reflected by each of the different substances of the inspection object becomes large. A first imaging step of imaging the inspection object with the illumination light from the first irradiation step, and a second imaging step of irradiating the illumination light in a light wavelength region in which a difference between respective reflected light amounts of different substances of the inspection object is reduced. The second irradiation step, the second imaging step of imaging the inspection object with the illumination light from the second irradiation step, and the inspection object by taking the difference between the captured images obtained in the first and second imaging steps. And identifying a specific region of

[0028]

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiment 1 FIG. FIG. 1 is a configuration diagram showing a semiconductor inspection apparatus according to Embodiment 1 of the present invention. In the drawing, reference numeral 1 denotes a semiconductor chip to be inspected, 3 denotes illumination means, and epi-illumination for illuminating the semiconductor chip 1 from a vertical direction;
Is a lens, 5 is a half mirror, 6 is imaging means such as a CCD camera for imaging the semiconductor chip 1, 9 is image processing means for analyzing a captured image captured by the imaging means 6, and 10 is bonding to the semiconductor chip 1 A gold wire 16 is provided in the epi-illumination 3 and is a filter means for limiting the light wavelength region of the illumination light. 17 is for switching the illumination light area and the imaging area from the epi-illumination 3 to the entire area of the semiconductor chip 1. Of the optical axis deflection switching means.

FIG. 2 is a diagram showing the relationship between the light wavelength and the reflectance of gold, silver and aluminum constituting the semiconductor chip 1 to be inspected. Also, FIG.
FIG. 7 is a diagram illustrating transmission characteristics of a blue filter used for No. 6; FIG. 4 is a diagram showing a captured image of the ball 11 taken by the semiconductor inspection device according to the first embodiment, and FIG. 5 is a diagram showing a captured image of the stitch 13 taken by the semiconductor inspection device according to the first embodiment. .

Next, the operation will be described. The illumination light emitted from the epi-illumination 3 is incident on the optical axis deflection switching means 17 by the half mirror 5 via the filter means 16.
The optical axis deflection switching means 17 can switch the field of view at high speed. The reflected light reflected by the semiconductor chip 1 enters the imaging unit 6 via the optical axis deflection switching unit 17, the half mirror 5, and the lens 4, and the imaging unit 6
Performs imaging of the semiconductor chip 1. The epi-illumination 3 and the optical axis deflection switching means 17 are appropriately controlled by control means (not shown).

Next, the meaning of adding the filter means 16 will be described with reference to an example of imaging and inspection of the ball 11 in the above-mentioned conventional example. Here, the ball 11 is made of gold and the pad 12
Is assumed to use aluminum.

As shown in FIG. 2, it can be seen from the reflectance of aluminum and the reflectance of gold that a large difference occurs in the light wavelength region of 350 to 500 nm. That is, 3
By irradiating the illumination light in the light wavelength region of 50 to 500 nm,
The amount of light reflected by the aluminum surface is large, but the amount of light reflected by the gold surface is small. Therefore, a blue filter transmitting the light wavelength region of 400 nm to 480 nm as shown in FIG. Illumination light D from the pad 12 made of aluminum (see FIG.
The reflected light of 7) is generated as before, but the amount of reflected light of the illumination lights A, B and C (FIG. 17) by the ball 11 made of gold is reduced.

Accordingly, in the conventional example, as shown in FIG. 18, an image in which the flange 11 b and the pad 12 cannot be distinguished from each other is used, and the entire ball 11 including the flange 11 b as shown in FIG. Can be improved to a separate image. As a result, the image processing means 9
Can be easily identified, and highly accurate and stable processing can be performed.

Next, imaging and inspection of the stitch 13 in the above-mentioned conventional example will be described as an example. Here, it is assumed that the stitch 13 is made of gold and the lead 14 is made of silver. As shown in FIG. 2, the reflectance on the gold surface and the reflectance on the silver surface are 350 to 5
It can be seen that a large difference occurs in the light wavelength region of 00 nm. Therefore, as in the case of imaging the ball 11, the lead 1 made of silver is formed by using a blue filter as shown in FIG.
Although the reflected light of the illumination light d (FIG. 19) by No. 4 is generated as before, the reflected light amount of the illumination light a, b and c (FIG. 19) by the stitch 13 made of gold is reduced.

Accordingly, an image in which the lead 14 is indistinguishable from the stitch flat portion 13b as shown in FIG.
The entire stitch 13 including b can be improved to an image separated from the lead 14. Thus, the image processing means 9 can easily identify the stitches 13 and perform highly accurate and stable processing.

As described above, according to the first embodiment,
In a test object composed of a plurality of different substances, the difference in the amount of light reflected by each substance is increased on the light receiving surface of the imaging means by utilizing the difference in the reflectance of each substance in the light wavelength area. Since the irradiation light of the above-mentioned is applied, an area to be inspected of the inspection object, that is, an area made of a specific substance can be easily identified, and a highly accurate and stable inspection can be performed.

Further, by using the filter means 16, the irradiation light becomes substantially monochromatic light, so that there is also an effect that blurring of an image due to chromatic aberration of the optical system can be reduced.

In the first embodiment, the case where the filter means 16 is installed in the epi-illumination 3 to limit the light wavelength range of the irradiation light has been described. It is needless to say that a similar effect can be obtained even when the configuration is such that the light wavelength region of the reflected light is limited.

Embodiment 2 FIG. 6 is a configuration diagram showing a semiconductor inspection apparatus according to Embodiment 2 of the present invention. In the figure, reference numeral 3a denotes a first illuminating unit, and 3b denotes a second illuminating unit. Unlike the first embodiment, a plurality of illuminating units are provided. Reference numeral 51 denotes a total reflection mirror. FIG. 7 is a captured image of the ball 11 captured by the semiconductor inspection device according to the second embodiment of the present invention.

Next, the operation will be described. The imaging and inspection of the ball 11 will be described as an example. First, the filter means 16
An image of the ball 11 is taken by the irradiation light from the first illuminating means 3a provided with the same blue filter as in the first embodiment. As in the first embodiment, a captured image as shown in FIG. 4 is obtained, and the captured image is stored in the image processing unit 9.

Next, an image of the ball 11 is taken by the irradiation light from the second lighting means 3b having no filter means.
Since the light wavelength range of the irradiation light from the second illumination unit 3b is not limited, it is possible to obtain a captured image of only the chamfer unit 11a as shown in FIG. 18 in the conventional example. Accordingly, the difference between the image captured by the blue filter 16 (FIG. 4) temporarily stored in the image processing unit 9 previously (FIG. 4) and the image captured by the irradiation light that does not limit the light wavelength region (FIG. 18) is obtained. Collar part 1 as shown in
An image of only 1b can be extracted.

If a captured image of only the flange portion 11b of the ball 11 can be extracted, the amount of displacement of the capillary 15 at the time of bonding, the amount of protrusion of the entire ball 11 from the pad 12, and the amount of the capillary 1 at the time of formation of the ball 11 can be obtained.
5 can be measured, and the amount of the deviation can be fed back to the bonding apparatus and corrected to reduce defects.

As described above, according to the second embodiment,
A region made of a specific substance is extracted as in the first embodiment, and a specific region is extracted by using a difference in the reflection direction of irradiation light due to a difference in the shape of the inspection object as in the conventional example. Further, since these differences are calculated, a specific area to be inspected can be identified.

In the second embodiment, a configuration in which a plurality of illumination means are provided and the filter means is provided in the illumination means has been described. However, a configuration in which a plurality of imaging means are provided and the filter means is provided in the imaging means may be adopted. good. FIG. 8 is a configuration diagram showing another semiconductor inspection device according to the second embodiment of the present invention. In the figure, reference numeral 6a denotes a first imaging unit having a filter unit 16, and 6b denotes a second imaging unit.

In this case, the image picked up by the first image pickup means 6a provided with the filter means 16 and the filter means 1
If the difference from the image captured by the second image capturing means 6b not provided with the device 6 is obtained, the same effect as in the second embodiment can be obtained.

Embodiment 3 In Embodiment 2 described above, an image is captured with irradiation light having no light wavelength range and an image as shown in FIG. 18 is obtained. However, irradiation light having no light wavelength range, that is, normal light is reflected by gold and aluminum. In FIG. 18, the flange 11 b made of gold and the pad 1 made of aluminum
2, the contrast with the chamfer portion 11a may be deteriorated, and the brim portion 11b may not be clearly extracted. Therefore, in the present embodiment, as the second filter means, a filter is used in which the difference between the reflected light amounts is small on the light receiving surface of the imaging means.
The region to be identified is more clearly extracted.

FIG. 9 is a configuration diagram showing a semiconductor inspection apparatus according to Embodiment 3 of the present invention. In the figure, 16a
Is a first filter provided in the first lighting means 3a, here, a blue filter used in the first embodiment, and 16b is a second filter provided in the second lighting means 3b. In this case, the blue filter 16a is a red filter having a different light wavelength range to be transmitted. FIG. 10 is a diagram showing transmission characteristics of a red filter used for the second filter means 16b.

Next, the operation will be described. The imaging and inspection of the ball 11 will be described as an example. First, the first embodiment
According to the same procedure as described above, imaging is performed using the irradiation light from the first illumination unit 3a including the first filter unit 16a. Since a blue filter is used for the first filter unit 16a, a captured image as shown in FIG. 4 is obtained, and the captured image is stored in the image processing unit 9.

Next, an image is picked up by irradiation light from the second illumination means 3b provided with the second filter means 16b. Here, a red filter is used as the second filter means 16b. As shown in FIG. 10, the red filter 16b
It transmits the light wavelength region of 00 nm or more. In FIG. 2 described above, looking at the reflectance of gold and aluminum in the light wavelength range of 600 nm or more, there is no difference in reflectance between gold and aluminum.
It can be said that the amount of light reflected by the gold surface and the amount of light reflected by the aluminum surface are almost the same. For this reason, the red filter 16b
When imaging is performed using irradiation light whose optical wavelength region is limited by the above, reflected light of the illumination light D (FIG. 17) from the pad 12 made of aluminum and illumination light B and C ( The amount of reflected light in FIG. 17) is substantially the same, and a captured image in which the chamfer portion 11a in the captured image shown in FIG. 18 is clearly raised can be obtained.

Therefore, as in the second embodiment, the difference between the image captured by the blue filter 16a temporarily stored in the image processing means 9 and the image captured by the red filter 16b that has just been captured is calculated, whereby the collar portion 11b Only the image can be better extracted than in the second embodiment.

As described above, according to the third embodiment, the second filter that transmits the light wavelength region in which the difference in the amount of reflected light of each of the substances constituting the object to be inspected is small on the light receiving surface of the imaging means. By providing the means, a specific region to be inspected can be more clearly extracted.

In the third embodiment, a configuration in which a plurality of illumination means are provided and each illumination means is provided with a filter means has been described. However, a configuration in which a plurality of imaging means are provided and each of the imaging means is provided with a filter means. You may do it. FIG. 11 is a configuration diagram showing another semiconductor inspection apparatus according to Embodiment 3 of the present invention. In the figure, reference numeral 6a denotes a first image pickup unit provided with a filter unit 16a, and 6b denotes a second image pickup unit provided with a filter unit 16b.

In this case, the difference between the image picked up by the first image pickup means 6a provided with the filter means 16a and the image picked up by the second image pickup means 6b provided with the filter means 16b is calculated as follows. The same effect as in the third embodiment can be obtained.

Embodiment 4 In Embodiment 3 described above, a configuration in which a plurality of illumination units or imaging units are provided, and a filter unit is provided in each of the illumination units or imaging units has been described. In the present embodiment, illumination is performed by using filter switching units. A single unit or a single imaging unit is used as in the first embodiment.

FIG. 12 is a configuration diagram showing a semiconductor inspection apparatus according to Embodiment 4 of the present invention. In the figure, 18
Are the first filter means 16a and the second filter means 1
6b is a filter switching means for switching 6b.

The first filter means 16a is selected by the filter switching means 18, the image picked up by the illumination light passing through the first filter means 16a, and the second filter means 16b is selected by the filter switching means 18. If the difference from the image captured by the illumination light passing through the second filter means 16b is obtained, an image similar to that of the third embodiment can be obtained. Therefore, the same effect as that of the third embodiment can be obtained without providing a plurality of illumination means.

In the fourth embodiment, the case where the first filter means 16a, the second filter means 16b, and the filter switching means 18 for switching between the first filter means 16a and the second filter means 16b are installed on the epi-illumination 3 side is explained. It is needless to say that the same effect as in the fourth embodiment can be obtained even if the above configuration is installed on the imaging means 6 side.

Embodiment 5 FIG. In the third and fourth embodiments, a case has been described in which imaging is performed using the first filter unit 16a and the second filter unit 16b that transmit different light wavelength regions, respectively. If the light wavelength region that can be electrically transmitted is switched by using the modulation element, the same effect as in the third and fourth embodiments using a plurality of filter means can be obtained with one filter means. An effect that can be simplified is also obtained.

Further, since the optical wavelength range is electrically switched, an effect of improving the switching response can be obtained as compared with the method using the filter switching means 18 described in the fourth embodiment.

The light modulating element utilizes a so-called acousto-optic effect in which an ultrasonic wave is applied to a medium, and when a light beam enters the medium, a part of the light beam is diffracted by the ultrasonic wave in the medium. It is desirable to use an acousto-optic filter or the like that can change the wavelength range of light that can be transmitted through.

Embodiment 6 FIG. In the first to fourth embodiments, the light source used for the epi-illumination 3 is not described. However, in the case of a general inspection device, a halogen lamp is used as the light source. The spectral distribution of the halogen lamp is shown in FIG.
As shown in (a), the light intensity is weak in the short wavelength region, and the light intensity increases in the long wavelength region. On the other hand, the blue filters used in the first to third embodiments have a transmitted light wavelength range of 400 to 480 n.
m is a relatively short wavelength region. Therefore, when a halogen lamp is used as a light source when a blue filter is used, the wavelength region where the light intensity of the irradiation light is strong is different from the light wavelength region where the filter can transmit, so that the illumination efficiency on the inspection object is reduced. There is a problem that.

Therefore, in the present embodiment, a metal halide lamp is used as a light source for the blue filter. As shown in FIG. 13 (b), the light intensity of the spectral distribution of the metal halide lamp increases between 400 and 600 nm.
On the other hand, the transmitted light wavelength range of the blue filter is 400 to 480.
nm. Therefore, since the wavelength region where the light intensity of the irradiation light becomes strong and the light wavelength region where the filter can pass almost coincide with each other, the amount of light transmitted through the filter means can be increased, and the object to be inspected can be efficiently illuminated. Can be irradiated.

Since the transmitted light wavelength range of the red filter is about 600 nm or more, it can be seen that irradiation with a halogen lamp is sufficient. In the sixth embodiment, an example in which a metal halide lamp is used as a light source for a blue filter has been described. However, the light source is not limited to this as long as the light source has a light wavelength region that substantially matches the transmitted light wavelength region of the filter to be used. is not.

Embodiment 7 FIG. In the first to sixth embodiments, the case where the inspection apparatus and the inspection method according to the present invention are applied to the inspection of the state of wire bonding in a semiconductor has been described. It is not limited to inspection.

For example, in a semiconductor chip, electrodes are generally formed on a semiconductor substrate such as silicon (Si) or gallium arsenide (GaAs) by gold deposition or the like. When such a semiconductor chip appearance inspection is performed, with conventional illumination, irradiation light passes through Si or GaAs, and even though electrodes formed by gold deposition can be detected, the appearance of the entire semiconductor chip cannot be detected. Therefore, as in each of the above embodiments, when the irradiation light is irradiated through the blue filter, the irradiation light is Si
The light is reflected by GaAs or GaAs, and the appearance of the entire semiconductor chip can be identified.

When it is desired to inspect an aluminum electrode of a semiconductor chip in which an aluminum electrode having a shape different from that of the gold electrode is present below the thin-film gold electrode, if an image is taken by conventional illumination, the illumination light is emitted on the surface of the gold electrode. It is reflected and the lower aluminum electrode cannot be identified. However, as in the above embodiments, when the illumination light is irradiated through a blue filter, the shape of the aluminum electrode can be identified because the light is not reflected on the surface of the gold electrode but is transmitted as it is and reflected on the aluminum electrode. it can.

[0067]

As described above, according to the first aspect of the present invention, an inspection object made of a plurality of different substances, illumination means for irradiating the inspection object with illumination light, and imaging for imaging the inspection object Means, provided in one of the illuminating means and the imaging means, a filter means for transmitting a light wavelength region in which the difference in the amount of reflected light by the different substances of the inspection object on the light receiving surface of the imaging means is large. Since an image processing means is provided for identifying a region of the test object made of a specific substance from the obtained captured image, a region of the test object made of the specific material can be easily identified, and the accuracy is high. The effect that a stable inspection can be obtained is obtained.

According to the second aspect of the present invention, since the filter means can change the light wavelength range that can be transmitted by using the light modulation element, the effect of simplifying the device configuration can be obtained.

According to the third aspect of the present invention, an object to be inspected made of a plurality of different substances, illumination means for irradiating the object with illumination light, first imaging means for imaging the object to be inspected, and The second imaging unit, the second imaging unit provided in the first imaging unit, transmits a light wavelength region in which a difference between respective reflected light amounts of different substances of the inspection object on the light receiving surface of the first imaging unit is large. One filter means and an image processing means for identifying a specific area of the inspection object from a difference between an image picked up by the first image pickup means and an image picked up by the second image pickup means are provided. A specific area of the inspection object can be easily identified, and the effect of high accuracy and stable inspection can be obtained.

According to the fourth aspect of the present invention, the second imaging means includes a light wavelength at which the difference in the amount of reflected light due to different substances of the inspection object is reduced on the light receiving surface of the second imaging means. Since the second filter means that transmits the area is provided, a specific area of the inspection object can be easily identified, and an effect of high accuracy and stable inspection can be obtained.

According to the fifth aspect of the present invention, an inspection object made of a plurality of different substances, illumination means for irradiating the inspection object with illumination light, imaging means for imaging the inspection object, illumination means, or The first filter means, which is provided on one of the imaging means and transmits a light wavelength region in which the difference in the amount of reflected light due to different substances of the inspection object increases on the light receiving surface of the imaging means, differs from the inspection object. Filter switching means for selecting any one of the second filter means, the first filter means and the second filter means which transmits a light wavelength region in which the difference in the amount of reflected light by the substance becomes smaller on the light receiving surface of the imaging means. A captured image captured via the first filter means selected by the filter switching means and an image captured via the second filter means selected by the filter switching means Since an image processing means for identifying a specific area of the inspection object from the difference from the image image is provided, it is possible to easily identify the specific area of the inspection object, and it is possible to perform a highly accurate and stable inspection. Is obtained.

According to the sixth aspect of the present invention, the illumination means is a light source whose spectral distribution is concentrated in the wavelength region of the transmitted light of the filter means. The effect that can be obtained is obtained.

According to the seventh aspect of the present invention, the inspection object made of a plurality of different substances, the first illumination means and the second illumination means for irradiating the inspection object with illumination light, and the inspection object Imaging means for imaging the first filter means, which is provided in the first illuminating means, transmits a light wavelength region in which the difference between the respective reflected light amounts of different substances of the inspection object on the light receiving surface of the imaging means is large, Since there is provided an image processing unit for identifying a specific area of the inspection object from a difference between a captured image captured by the illumination light of the first illumination unit and a captured image captured by the illumination light of the second illumination unit, A specific area of the inspection object can be easily identified, and the effect of high accuracy and stable inspection can be obtained.

According to the invention, the second illuminating means transmits the light in a light wavelength region in which the difference in the amount of reflected light due to different substances of the inspection object becomes small on the light receiving surface of the imaging means. Since the second filter means is provided, it is possible to easily identify a specific area of the inspection object, and to obtain an effect of high accuracy and stable inspection.

According to the ninth aspect of the present invention, since the first and second illuminating means are light sources whose spectral distributions are concentrated in the wavelength region of the transmitted light of the filter means, the efficiency of the object to be inspected is improved. The effect that illumination can be radiated well is obtained.

According to the tenth aspect of the present invention, in the semiconductor inspection method according to the present invention, the difference between the reflected light amounts of the plurality of different substances due to the different substances of the plurality of different substances is different. The method includes a step of irradiating the inspection object with illumination light in a light wavelength region that becomes larger, a step of imaging the inspection object, and a step of identifying a region made of a specific substance of the inspection object from the obtained captured image. An area consisting of a specific substance of the inspection object can be easily identified, and an effect of high accuracy and stable inspection can be obtained.

According to the eleventh aspect of the present invention, the first irradiation step of irradiating the inspection object made of a plurality of different substances with illumination light, and the inspection object is illuminated with the illumination light from the first irradiation step. A first imaging step of imaging, a second irradiation step of irradiating the inspection object with illumination light in a light wavelength region in which a difference in the amount of reflected light of each of the different substances of the inspection object is large, and a second irradiation step A second imaging step of imaging the inspection object with illumination light according to the method, and a step of identifying a specific region of the inspection object by taking a difference between the captured images obtained in the first and second imaging steps. In addition, it is possible to easily identify a specific area of the inspection object, and to obtain an effect that a highly accurate and stable inspection can be performed.

According to the twelfth aspect of the present invention, the illumination light in the light wavelength region where the difference in the amount of light reflected by each of the different substances of the inspection object is large is applied to the inspection object made of a plurality of different substances. A first irradiation step of irradiating the object to be inspected, a first imaging step of imaging the object to be inspected with illumination light from the first irradiation step, and a difference between respective reflected light amounts of different substances of the object to be inspected is reduced. A second irradiation step of irradiating the illumination light in the light wavelength region, a second imaging step of imaging the inspection object with the illumination light by the second irradiation step, and imaging obtained in the first and second imaging steps Since the method includes a step of identifying a specific region of the inspection object by taking a difference between images, it is possible to easily identify the specific region of the inspection object, and obtain an effect that a highly accurate and stable inspection can be performed. Can be

[Brief description of the drawings]

FIG. 1 is a configuration diagram showing a semiconductor inspection device according to a first embodiment of the present invention.

FIG. 2 is a diagram for explaining a semiconductor inspection device according to the first embodiment of the present invention.

FIG. 3 is a diagram showing characteristics of a filter means used in the semiconductor inspection device according to the first embodiment of the present invention;

FIG. 4 is a diagram showing a captured image captured by the semiconductor inspection device according to the first embodiment of the present invention;

FIG. 5 is a diagram showing a captured image captured by the semiconductor inspection device according to the first embodiment of the present invention;

FIG. 6 is a configuration diagram showing a semiconductor inspection device according to a second embodiment of the present invention.

FIG. 7 is a diagram illustrating a captured image captured by a semiconductor inspection device according to a second embodiment of the present invention;

FIG. 8 is a configuration diagram showing another semiconductor inspection apparatus according to the second embodiment of the present invention.

FIG. 9 is a configuration diagram showing a semiconductor inspection device according to a third embodiment of the present invention.

FIG. 10 is a diagram showing characteristics of a filter means used in a semiconductor inspection device according to a third embodiment of the present invention.

FIG. 11 is a configuration diagram showing another semiconductor inspection apparatus according to Embodiment 3 of the present invention.

FIG. 12 is a configuration diagram showing a semiconductor inspection device according to a fourth embodiment of the present invention.

FIG. 13 is a characteristic diagram of a light source used in a semiconductor inspection device according to a fifth embodiment of the present invention.

FIG. 14 is a configuration diagram showing a conventional semiconductor inspection device.

FIG. 15 is a view for explaining a conventional semiconductor inspection device.

FIG. 16 is a view for explaining a conventional semiconductor inspection device.

FIG. 17 is an image captured by a conventional semiconductor inspection device.

FIG. 18 is a view for explaining a conventional semiconductor inspection device.

FIG. 19 is a view for explaining a conventional semiconductor inspection device.

FIG. 20 is an image captured by a conventional semiconductor inspection device.

FIG. 21 is a view for explaining a conventional semiconductor inspection device.

[Explanation of symbols]

1 semiconductor chip, 2 oblique illumination, 3 epi-illumination, 4
Lens, 5 half mirror, 6 imaging means, 7 optical head, 8 XYZ stage, 9 image processing means, 10
Wire, 11 balls, 12 pads, 13 stitches, 14 leads, 15 capillaries, 16 filter means, 17 optical axis deflection switching means, 18 filter switching means

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Tatsunori Hihara 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Mitsui Electric Co., Ltd. (72) Inventor Masahiko Uno 2-3-2 Marunouchi, Chiyoda-ku, Tokyo No. Mitsubishi Electric Corporation

Claims (12)

[Claims] An object to be inspected made of a plurality of different substances, illumination means for irradiating the object with illumination light, imaging means for imaging the object, one of the illumination means and the imaging means A filter means for transmitting a light wavelength region in which a difference in the amount of reflected light due to different substances of the object to be inspected is large on a light receiving surface of the imaging means; A semiconductor inspection apparatus, comprising: an image processing unit for identifying an area of an object made of a specific substance. 2. The semiconductor inspection apparatus according to claim 1, wherein the filter means can change a light wavelength range that can be transmitted by using a light modulation element. 3. An inspection object made of a plurality of different substances, illumination means for irradiating the inspection object with illumination light, first imaging means and second imaging means for imaging the inspection object, The first filter means, which is provided in the image pickup means and transmits a light wavelength region in which the difference between the respective reflected light amounts of the different substances of the inspection object on the light receiving surface of the first image pickup means, the first filter means A semiconductor inspection apparatus comprising: an image processing unit that identifies a specific region of the inspection object from a difference between an image captured by an imaging unit and an image captured by the second imaging unit. 4. A second filter means for transmitting a light wavelength region in which a difference in the amount of reflected light by a different substance of the object to be inspected is reduced on a light receiving surface of the second image pickup means. 4. The semiconductor inspection apparatus according to claim 3, further comprising: 5. An object to be inspected made of a plurality of different substances, illumination means for irradiating the object with illumination light, imaging means for imaging the object to be inspected, and one of the illumination means or the imaging means A first filter means for transmitting a light wavelength region in which a difference between respective reflected light amounts of different substances of the object to be inspected by the different substances is large on a light receiving surface of the imaging means; A filter switching unit that selects one of the first filter unit or the second filter unit, the second filter unit transmitting a light wavelength region in which the difference in the amount of reflected light is reduced on the light receiving surface of the imaging unit, The captured image taken through the first filter means selected by the filter switching means and the second filter means selected by the filter switching means A semiconductor inspection apparatus comprising: an image processing unit that identifies a specific area of the inspection object from a difference from a captured image captured through the semiconductor device. 6. The semiconductor inspection apparatus according to claim 1, wherein the illuminating unit is a light source having a spectral distribution concentrated in a wavelength region of the transmitted light of the filter unit. 7. An object to be inspected made of a plurality of different substances, a first illumination unit and a second illumination unit for irradiating the inspection object with illumination light, an imaging unit for imaging the object, A first filter means that is provided in the illumination means and transmits a light wavelength region in which the difference in the amount of reflected light due to the different substances of the inspection object increases on the light receiving surface of the imaging means;
Image processing means for identifying a specific region of the inspection object from a difference between a captured image captured by the illumination light by the first illumination means and a captured image captured by the illumination light by the second illumination means is provided. A semiconductor inspection device. 8. The second illuminating means includes a second filter means for transmitting a light wavelength region in which a difference between reflected light amounts of different substances of the object to be inspected on the light receiving surface of the imaging means is small. The semiconductor inspection apparatus according to claim 7, wherein: 9. The semiconductor inspection apparatus according to claim 7, wherein the first and second illumination units are light sources whose spectral distributions are concentrated in a wavelength region of the transmitted light of the filter unit. 10. A step of irradiating an object to be inspected made of a plurality of different substances with illumination light in a light wavelength region in which a difference in the amount of light reflected by each of the different substances of the object becomes large. A semiconductor inspection method, comprising: a step of imaging an object to be inspected; and a step of identifying a region made of a specific substance of the object to be inspected from the obtained captured image. 11. A first irradiation step of irradiating an inspection object made of a plurality of different substances with illumination light, a first imaging step of imaging the inspection object with illumination light from the first irradiation step, A second irradiation step of irradiating the inspection object with illumination light in a light wavelength region in which a difference in the amount of light reflected by each of the different substances of the inspection object is large; A second imaging step of imaging the semiconductor device, and a step of identifying a specific area of the inspection object by calculating a difference between the captured images obtained in the first and second imaging steps. Inspection methods. 12. A first method of irradiating an object to be inspected made of a plurality of different substances with illumination light in a light wavelength region in which a difference in the amount of light reflected by each of the different substances of the object becomes large. Irradiation step, a first imaging step of imaging the inspection object with illumination light from the first irradiation step, illumination light in a light wavelength region where the difference in the amount of reflected light of each of the different substances of the inspection object is reduced. A second irradiation step of irradiating, a second imaging step of imaging the inspection object with the illumination light from the second irradiation step, and taking a difference between the captured images obtained in the first and second imaging steps. And a step of identifying a specific region of the inspection object.