JPH1123664A - Measuring circuit of semiconductor device - Google Patents
Measuring circuit of semiconductor deviceInfo
- Publication number
- JPH1123664A JPH1123664A JP9178341A JP17834197A JPH1123664A JP H1123664 A JPH1123664 A JP H1123664A JP 9178341 A JP9178341 A JP 9178341A JP 17834197 A JP17834197 A JP 17834197A JP H1123664 A JPH1123664 A JP H1123664A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- terminal
- current
- measured
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 238000005259 measurement Methods 0.000 claims abstract description 42
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体デバイスの
電流測定回路に関し、特に、測定中に電流測定レンジを
切り換えても、半導体デバイスに印加する電圧が一時的
に途切れることのない半導体デバイスの電流測定回路に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a current measuring circuit for a semiconductor device, and more particularly to a current measuring circuit for a semiconductor device in which a voltage applied to the semiconductor device is not interrupted temporarily even when a current measuring range is switched during measurement. It relates to a measurement circuit.
【０００２】[0002]
【従来の技術】以下、従来のこの種の半導体デバイスの
測定回路について説明する。図２において、４は被測定
ＩＣ、３は被測定ＩＣ４の電圧印加端子(電圧Ｖcc)、５
は電圧供給電流測定端子(電圧Ｖ2)である。2. Description of the Related Art A conventional measuring circuit for a semiconductor device of this type will be described below. In FIG. 2, reference numeral 4 denotes an IC to be measured, 3 denotes a voltage application terminal (voltage Vcc) of the IC 4 to be measured,
Is a voltage supply current measurement terminal (voltage V 2 ).
【０００３】このように構成された従来の電流測定回路
において、被測定ＩＣ４の電圧印加端子３に流れる電流
Ｉ1を測定する際は、電圧供給電流測定端子５に電圧Ｖ2
を供給し、かつその電圧供給電流測定端子５に流れる電
流を測定する。つまり、電圧供給と電流測定を一つの端
子で行ってきた。In the conventional current measuring circuit configured as described above, when measuring the current I 1 flowing through the voltage application terminal 3 of the IC 4 to be measured, the voltage V 2 is applied to the voltage supply current measurement terminal 5.
And the current flowing through the voltage supply current measurement terminal 5 is measured. That is, voltage supply and current measurement have been performed at one terminal.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、このよ
うな半導体デバイスの測定回路では、電流測定レンジを
またがるように大きく変化する電流を測定する場合で
は、電流測定レンジを切り換えると、印加電圧が一時的
に途切れてしまう。このように、印加電圧が一時的に途
切れてしまうと被測定ＩＣの状態も変化してしまうの
で、ＩＣの電流測定を行う場合は、印加電圧を維持させ
るために電流測定レンジを固定して電流測定を行わなけ
ればならず、結果として測定精度が低下するという問題
があった。However, in such a measurement circuit of a semiconductor device, when a current that greatly changes across the current measurement range is measured, when the current measurement range is switched, the applied voltage is temporarily reduced. Will be interrupted. As described above, when the applied voltage is temporarily interrupted, the state of the IC to be measured also changes. Therefore, when measuring the current of the IC, the current measurement range is fixed to maintain the applied voltage. Measurement has to be performed, and as a result, there is a problem that the measurement accuracy is reduced.
【０００５】本発明は、上記従来技術の問題点を解決す
るもので、電流測定を行う際に、電流測定レンジを切り
換えても、印加電圧は途切れることがなく、一定の電圧
を維持して、適正な電流測定レンジで高精度に電流測定
を行うことができる半導体デバイスの測定回路を提供す
ることを目的とする。The present invention solves the above-mentioned problems of the prior art. When current measurement is performed, the applied voltage is not interrupted even when the current measurement range is switched, and a constant voltage is maintained. It is an object of the present invention to provide a semiconductor device measurement circuit capable of performing current measurement with high accuracy in an appropriate current measurement range.
【０００６】[0006]
【課題を解決するための手段】この目的を達成するため
に、本発明の半導体デバイスの測定回路は、被測定ＩＣ
の印加電圧Ｖccを決定する第１の電圧Ｖ1を供給する電
圧供給端子と、非反転入力端子が電圧供給端子に接続さ
れた演算増幅器と、コレクタとベースが演算増幅器の出
力端子に接続された第１のトランジスタと、一端が第１
のトランジスタのエミッタに接続され他端が被測定ＩＣ
の電圧印加端子および演算増幅器の反転入力端子に接続
された第１の抵抗と、ベースが第１のトランジスタのベ
ースに接続されコレクタが演算増幅器の出力端子に接続
されて第１のトランジスタとカレントミラーを構成する
第２のトランジスタと、一端が第２のトランジスタのエ
ミッタに接続され、他端が、第２の電圧Ｖ2を供給する
とともに被測定ＩＣの電圧印加端子に流れる電流と同一
電流を測定する電圧供給電流測定端子に接続された第２
の抵抗とを備えた構成とする。In order to achieve this object, a measuring circuit for a semiconductor device according to the present invention comprises an IC to be measured.
A voltage supply terminal for supplying a first voltage V1 for determining the applied voltage Vcc, an operational amplifier having a non-inverting input terminal connected to the voltage supply terminal, and a collector and a base connected to output terminals of the operational amplifier. A first transistor having one end connected to the first transistor;
The other end is connected to the emitter of the transistor
A first resistor connected to the voltage application terminal of the operational amplifier and an inverting input terminal of the operational amplifier; a base connected to the base of the first transistor; and a collector connected to the output terminal of the operational amplifier, and a current mirror connected to the first transistor. a second transistor constituting the one end connected to the emitter of the second transistor and the other end, measuring the same current and current flowing to the voltage application terminal of the measured IC supplies a second voltage V 2 Connected to the voltage supply current measurement terminal
And a resistor having the same resistance.
【０００７】この構成によれば、電圧供給電流測定端子
における電流測定レンジを切り換えても、被測定ＩＣの
電圧印加端子に印加される電圧は電圧供給端子より供給
されたものであるから、印加電圧が途切れることなく、
被測定ＩＣの電圧印加端子に流れる広い幅の電流レベル
を測定することができる。According to this configuration, even if the current measurement range at the voltage supply current measurement terminal is switched, the voltage applied to the voltage application terminal of the IC to be measured is supplied from the voltage supply terminal. Without interruption
A wide current level flowing to the voltage application terminal of the IC to be measured can be measured.
【０００８】また、電圧供給電流測定端子における電流
測定レンジを切り換える代わりに、第２の抵抗の値を変
えて第１の抵抗と第２の抵抗の比を切り換えることによ
り、被測定ＩＣの電圧印加端子に流れる電流を測定する
こともできる。Further, instead of switching the current measurement range at the voltage supply current measurement terminal, the value of the second resistor is changed to switch the ratio between the first resistor and the second resistor, thereby applying the voltage to the IC under test. The current flowing through the terminal can also be measured.
【０００９】[0009]
【発明の実施の形態】以下、本発明の実施の形態につい
て、図面を参照しながら詳細に説明する。図１は、本発
明の一実施の形態における半導体デバイスの測定回路を
示したものである。図１において、１は電圧供給端子
で、被測定ＩＣ４の印加電圧Ｖccを決定する第１の電圧
Ｖ1を供給する。２は非反転入力端子が電圧供給端子１
に接続された演算増幅器、３は被測定ＩＣ４の電圧印加
端子、Ｑ1はコレクタとベースが演算増幅器２の出力端
子に接続された第１のトランジスタ、Ｒ1は一端が第１
のトランジスタＱ1のエミッタに接続され、他端が被測
定ＩＣ４の電圧印加端子３および演算増幅器２の反転入
力端子に接続された第１の抵抗、Ｑ2はベースが第１の
トランジスタＱ1のベースに接続されコレクタが演算増
幅器２の出力端子に接続されて第１のトランジスタＱ1
とカレントミラーを構成する第２のトランジスタ、Ｒ2
は一端が第２のトランジスタＱ2のエミッタに接続さ
れ、他端が、第２の電圧Ｖ2を供給するとともに被測定
ＩＣ４の電圧印加端子３に流れる電流と同一電流を測定
する電圧供給電流測定端子５に接続された第２の抵抗で
ある。Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 shows a measuring circuit of a semiconductor device according to an embodiment of the present invention. In Figure 1, 1 is the voltage supply terminal, for supplying a first voltage V 1 to determine the applied voltage Vcc of the measured IC 4. 2 is a non-inverting input terminal is a voltage supply terminal 1
, 3 is a voltage application terminal of the IC 4 to be measured, Q 1 is a first transistor whose collector and base are connected to the output terminal of the operational amplifier 2, and R 1 is one end of the first transistor.
Of being connected to the emitter of the transistor Q 1, a first resistor whose other end is connected to the inverting input terminal of the voltage application terminal 3 and an operational amplifier 2 of the measured IC 4, Q 2 is base of the first transistor Q 1 The first transistor Q 1 is connected to the base and the collector is connected to the output terminal of the operational amplifier 2.
And a second transistor forming a current mirror, R 2
Has one end connected to the second transistor Q 2 emitter, the other end, a voltage supply current measurement to measure the same current and current flowing to the voltage application terminal 3 of the measured IC4 supplies a second voltage V 2 The second resistor is connected to the terminal 5.
【００１０】次に、本実施の形態における動作を説明す
る。本発明の基本的構成はカレントミラー回路を用いた
点である。電圧供給端子１は演算増幅器２の非反転入力
端子に接続されており、電圧Ｖ1を印加すると、演算増
幅器の特性により反転入力端子には非反転入力端子に印
加された電圧Ｖ1と同じ電圧がかかる。さらに被測定Ｉ
Ｃ４の電圧印加端子３と演算増幅器２の反転入力端子が
接続されているので、被測定ＩＣ４の電圧印加端子３に
も演算増幅器２に印加された電圧Ｖ1と同じ電圧Ｖccが
印加されることになる。よって被測定ＩＣ４の電圧印加
端子３に印加される電圧は、演算増幅器２を使用するこ
とにより電圧供給端子１より供給することができる。Next, the operation of this embodiment will be described. The basic configuration of the present invention is that a current mirror circuit is used. Voltage supply terminal 1 is connected to the non-inverting input terminal of the operational amplifier 2, is applied to voltages V 1, to the inverting input terminal due to the characteristics of the operational amplifier non-inverting input applied voltages V 1 and the same voltage to the terminal It takes. Further, the measured I
Since the voltage application terminal 3 of C4 inverting input terminal of the operational amplifier 2 is connected, that the same voltage Vcc is applied as voltages V 1 applied to the voltage application terminal 3 of the measured IC4 to the operational amplifier 2 become. Therefore, the voltage applied to the voltage application terminal 3 of the IC under test 4 can be supplied from the voltage supply terminal 1 by using the operational amplifier 2.
【００１１】また、被測定ＩＣ４の電圧印加端子３に流
れる電流Ｉ1は、抵抗Ｒ1，ＮＰＮ形トランジスタＱ1よ
り供給される。抵抗Ｒ1，ＮＰＮ形トランジスタＱ1と抵
抗Ｒ2，ＮＰＮ形トランジスタＱ2はカレントミラーを構
成しているので、抵抗Ｒ2に流れる電流Ｉ2は、抵抗Ｒ1
と抵抗Ｒ2の比および電流Ｉ1によって決定される(即
ち、Ｉ2＝(Ｒ1／Ｒ2)Ｉ1)。この電流Ｉ2を、ＮＰＮ形ト
ランジスタＱ2のエミッタに直列に接続された抵抗Ｒ2の
一端に、電圧供給端子１に供給された電圧Ｖ1と同じ電
圧Ｖ2を供給し、電流測定を行う電圧供給電流測定端子
５で測定すれば、被測定ＩＣ４の電圧印加端子３に実際
に流れる電流Ｉ1を測定することができる。The current I 1 flowing to the voltage application terminal 3 of the IC under test 4 is supplied from the resistor R 1 and the NPN transistor Q 1 . Since the resistor R 1 and the NPN transistor Q 1 and the resistor R 2 and the NPN transistor Q 2 constitute a current mirror, the current I 2 flowing through the resistor R 2 is equal to the resistance R 1
Is determined by the ratio and the current I 1 of the resistor R 2 (i.e., I 2 = (R 1 / R 2) I 1). The current I 2, to one end of a resistor R 2 connected in series to the emitter of NPN type transistor Q 2, and supplies the same voltage V 2 and the voltages V 1 supplied to the voltage supply terminal 1, a current is measured if measured in the voltage supply current measuring terminal 5, it is possible to measure the current I 1 actually flowing to the voltage application terminal 3 of the measured IC 4.
【００１２】この電圧供給電流測定端子５で電流測定を
行えば、電流測定レンジを切り換えると、この電圧供給
電流測定端子５の印加電圧は一時的に途切れるが、被測
定ＩＣ４の印加電圧は電圧供給端子１より供給されてお
り、また被測定ＩＣ４の電圧印加端子３に流れる電流Ｉ
1はＮＰＮ形トランジスタＱ1，抵抗Ｒ1より供給されて
いるため、電圧供給電流測定端子５の影響を全く受け
ず、したがって、被測定ＩＣ４への印加電圧は途切れる
ことなく維持され、電圧印加端子３に流れる様々なレベ
ルの電流を適正な電流測定レンジで測定することが可能
となり、結果として高精度の電流測定を行うことができ
る。If the current is measured at the voltage supply current measurement terminal 5, when the current measurement range is switched, the voltage applied to the voltage supply current measurement terminal 5 is temporarily interrupted. The current I supplied from the terminal 1 and flowing to the voltage application terminal 3 of the IC 4 to be measured.
Since 1 is supplied from the NPN transistor Q 1 and the resistor R 1 , it is not affected by the voltage supply current measuring terminal 5 at all, so that the voltage applied to the IC 4 to be measured is maintained without interruption, and the voltage applying terminal 3 can be measured in an appropriate current measurement range, and as a result, highly accurate current measurement can be performed.
【００１３】[0013]
【発明の効果】以上説明したように、本発明によれば、
被測定ＩＣの電圧印加端子に電圧を供給する電圧供給端
子と電圧印加端子に流れる電流を測定する電流測定端子
とを別々に設けているため、電流測定端子の電流測定レ
ンジを切り換えても電圧印加端子の電圧は途切れること
なく電圧を保持し、様々なレベルの電流測定が可能とな
り、結果として高精度の電流測定を行うことができると
いう効果を奏する。As described above, according to the present invention,
Since the voltage supply terminal for supplying the voltage to the voltage application terminal of the IC to be measured and the current measurement terminal for measuring the current flowing through the voltage application terminal are separately provided, the voltage is applied even if the current measurement range of the current measurement terminal is switched. The voltage of the terminal is maintained without interruption, and various levels of current measurement can be performed. As a result, high-precision current measurement can be performed.
【図１】本発明の一実施の形態における半導体デバイス
の測定回路図である。FIG. 1 is a measurement circuit diagram of a semiconductor device according to an embodiment of the present invention.
【図２】従来例の半導体デバイスの測定回路図である。FIG. 2 is a measurement circuit diagram of a conventional semiconductor device.
１…電圧供給端子(電圧Ｖ1)、 ２…演算増幅器、 ３
…電圧印加端子(電圧Ｖcc)、 ４…被測定ＩＣ、 ５…
電圧供給電流測定端子(電圧Ｖ2)、 Ｑ1，Ｑ2…トラン
ジスタ、 Ｒ1，Ｒ2…抵抗。1 ... voltage supply terminal (voltage V 1 ), 2 ... operational amplifier, 3
... voltage application terminal (voltage Vcc), 4 ... IC to be measured, 5 ...
Voltage supply current measurement terminal (voltage V 2 ), Q 1 , Q 2 ... transistor, R 1 , R 2 ... resistor.
Claims (2)
１の電圧Ｖ1を供給する電圧供給端子と、非反転入力端
子が前記電圧供給端子に接続された演算増幅器と、コレ
クタとベースが前記演算増幅器の出力端子に接続された
第１のトランジスタと、一端が前記第１のトランジスタ
のエミッタに接続され他端が前記被測定ＩＣの電圧印加
端子および前記演算増幅器の反転入力端子に接続された
第１の抵抗と、ベースが前記第１のトランジスタのベー
スに接続されコレクタが前記演算増幅器の出力端子に接
続されて前記第１のトランジスタとカレントミラーを構
成する第２のトランジスタと、一端が前記第２のトラン
ジスタのエミッタに接続され、他端が、第２の電圧Ｖ2
を供給するとともに前記被測定ＩＣの電圧印加端子に流
れる電流と同一電流を測定する電圧供給電流測定端子に
接続された第２の抵抗とを備えており、前記電圧供給電
流測定端子における電流測定レンジを切り換えても、前
記被測定ＩＣの電圧印加端子に印加される電圧が途切れ
ることなく被測定ＩＣの電圧印加端子に流れる電流を測
定することを特徴とする半導体デバイスの測定回路。 1. A voltage supply terminal for supplying a first voltage V1 for determining an applied voltage Vcc of an IC to be measured, an operational amplifier having a non-inverting input terminal connected to the voltage supply terminal, a collector and a base. A first transistor connected to an output terminal of the operational amplifier, one end connected to an emitter of the first transistor, and the other end connected to a voltage application terminal of the IC under test and an inverting input terminal of the operational amplifier; A first resistor having a base connected to the base of the first transistor and a collector connected to the output terminal of the operational amplifier to form a current mirror with the first transistor; The other end is connected to the emitter of the second transistor, and the other end is connected to a second voltage V 2.
And a second resistor connected to a voltage supply current measurement terminal for measuring the same current as the current flowing through the voltage application terminal of the IC to be measured, and a current measurement range at the voltage supply current measurement terminal. A circuit for measuring a current flowing through a voltage application terminal of an IC to be measured without interruption of a voltage applied to a voltage application terminal of the IC to be measured even if the switching is performed.
１の電圧Ｖ1を供給する電圧供給端子と、非反転入力端
子が前記電圧供給端子に接続された演算増幅器と、コレ
クタとベースが前記演算増幅器の出力端子に接続された
第１のトランジスタと、一端が前記第１のトランジスタ
のエミッタに接続され他端が前記被測定ＩＣの電圧印加
端子および前記演算増幅器の反転入力端子に接続された
第１の抵抗と、ベースが前記第１のトランジスタのベー
スに接続されコレクタが前記演算増幅器の出力端子に接
続されて前記第１のトランジスタとカレントミラーを構
成する第２のトランジスタと、一端が前記第２のトラン
ジスタのエミッタに接続され、他端が、第２の電圧Ｖ2
を供給するとともに前記被測定ＩＣの電圧印加端子に流
れる電流と同一電流を測定する電圧供給電流測定端子に
接続された第２の抵抗とを備えており、前記第２の抵抗
の値を変えて前記第１の抵抗と第２の抵抗の比を切り換
えることにより前記被測定ＩＣの電圧印加端子に流れる
電流を測定することを特徴とする半導体デバイスの測定
回路。2. A voltage supply terminal for supplying a first voltage V1 for determining an applied voltage Vcc of an IC to be measured, an operational amplifier having a non-inverting input terminal connected to the voltage supply terminal, a collector and a base. A first transistor connected to an output terminal of the operational amplifier, one end connected to an emitter of the first transistor, and the other end connected to a voltage application terminal of the IC under test and an inverting input terminal of the operational amplifier; A first resistor having a base connected to the base of the first transistor and a collector connected to the output terminal of the operational amplifier to form a current mirror with the first transistor; The other end is connected to the emitter of the second transistor, and the other end is connected to a second voltage V 2.
And a second resistor connected to a voltage supply current measurement terminal for measuring the same current as the current flowing through the voltage application terminal of the IC under test, and changing the value of the second resistance. A measurement circuit for a semiconductor device, wherein a current flowing to a voltage application terminal of the IC to be measured is measured by switching a ratio between the first resistance and the second resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9178341A JPH1123664A (en) | 1997-07-03 | 1997-07-03 | Measuring circuit of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9178341A JPH1123664A (en) | 1997-07-03 | 1997-07-03 | Measuring circuit of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1123664A true JPH1123664A (en) | 1999-01-29 |
Family
ID=16046807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9178341A Pending JPH1123664A (en) | 1997-07-03 | 1997-07-03 | Measuring circuit of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1123664A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6968249B2 (en) | 2003-01-20 | 2005-11-22 | Mitsubishi Denki Kabushiki Kaisha | Current measuring circuit for measuring drive current to load |
| KR100852919B1 (en) | 2005-11-17 | 2008-08-22 | 정재호 | Voltage-Current Measurement Device for Semiconductor Device Diagnosis |
-
1997
- 1997-07-03 JP JP9178341A patent/JPH1123664A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6968249B2 (en) | 2003-01-20 | 2005-11-22 | Mitsubishi Denki Kabushiki Kaisha | Current measuring circuit for measuring drive current to load |
| KR100852919B1 (en) | 2005-11-17 | 2008-08-22 | 정재호 | Voltage-Current Measurement Device for Semiconductor Device Diagnosis |
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