JPH11251590A5 - - Google Patents
Info
- Publication number
- JPH11251590A5 JPH11251590A5 JP1998062336A JP6233698A JPH11251590A5 JP H11251590 A5 JPH11251590 A5 JP H11251590A5 JP 1998062336 A JP1998062336 A JP 1998062336A JP 6233698 A JP6233698 A JP 6233698A JP H11251590 A5 JPH11251590 A5 JP H11251590A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06233698A JP3738127B2 (ja) | 1998-02-26 | 1998-02-26 | 高耐圧半導体デバイス |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06233698A JP3738127B2 (ja) | 1998-02-26 | 1998-02-26 | 高耐圧半導体デバイス |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005273382A Division JP4294016B2 (ja) | 2005-09-21 | 2005-09-21 | 半導体デバイスの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH11251590A JPH11251590A (ja) | 1999-09-17 |
| JPH11251590A5 true JPH11251590A5 (2) | 2005-04-07 |
| JP3738127B2 JP3738127B2 (ja) | 2006-01-25 |
Family
ID=13197195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP06233698A Expired - Lifetime JP3738127B2 (ja) | 1998-02-26 | 1998-02-26 | 高耐圧半導体デバイス |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3738127B2 (2) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6635926B2 (en) * | 2000-08-30 | 2003-10-21 | Shindengen Electric Manufacturing Co., Ltd. | Field effect transistor with high withstand voltage and low resistance |
| JP2002246595A (ja) * | 2001-02-19 | 2002-08-30 | Shindengen Electric Mfg Co Ltd | トランジスタ |
| JP4088063B2 (ja) * | 2001-11-14 | 2008-05-21 | 株式会社東芝 | パワーｍｏｓｆｅｔ装置 |
| JP3973934B2 (ja) * | 2002-03-15 | 2007-09-12 | 株式会社東芝 | 高耐圧半導体装置 |
| JP5037476B2 (ja) * | 2008-11-13 | 2012-09-26 | 三菱電機株式会社 | 半導体装置 |
| JP6381101B2 (ja) * | 2013-12-09 | 2018-08-29 | 富士電機株式会社 | 炭化珪素半導体装置 |
-
1998
- 1998-02-26 JP JP06233698A patent/JP3738127B2/ja not_active Expired - Lifetime