JP3738127B2 - 高耐圧半導体デバイス - Google Patents

高耐圧半導体デバイス Download PDF

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Publication number
JP3738127B2
JP3738127B2 JP06233698A JP6233698A JP3738127B2 JP 3738127 B2 JP3738127 B2 JP 3738127B2 JP 06233698 A JP06233698 A JP 06233698A JP 6233698 A JP6233698 A JP 6233698A JP 3738127 B2 JP3738127 B2 JP 3738127B2
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JP
Japan
Prior art keywords
diffusion layer
layer
region
conductivity type
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP06233698A
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English (en)
Japanese (ja)
Other versions
JPH11251590A (ja
JPH11251590A5 (2
Inventor
宣樹 宮腰
正紀 福井
秀幸 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP06233698A priority Critical patent/JP3738127B2/ja
Publication of JPH11251590A publication Critical patent/JPH11251590A/ja
Publication of JPH11251590A5 publication Critical patent/JPH11251590A5/ja
Application granted granted Critical
Publication of JP3738127B2 publication Critical patent/JP3738127B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
JP06233698A 1998-02-26 1998-02-26 高耐圧半導体デバイス Expired - Lifetime JP3738127B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP06233698A JP3738127B2 (ja) 1998-02-26 1998-02-26 高耐圧半導体デバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06233698A JP3738127B2 (ja) 1998-02-26 1998-02-26 高耐圧半導体デバイス

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005273382A Division JP4294016B2 (ja) 2005-09-21 2005-09-21 半導体デバイスの製造方法

Publications (3)

Publication Number Publication Date
JPH11251590A JPH11251590A (ja) 1999-09-17
JPH11251590A5 JPH11251590A5 (2) 2005-04-07
JP3738127B2 true JP3738127B2 (ja) 2006-01-25

Family

ID=13197195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP06233698A Expired - Lifetime JP3738127B2 (ja) 1998-02-26 1998-02-26 高耐圧半導体デバイス

Country Status (1)

Country Link
JP (1) JP3738127B2 (2)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6635926B2 (en) * 2000-08-30 2003-10-21 Shindengen Electric Manufacturing Co., Ltd. Field effect transistor with high withstand voltage and low resistance
JP2002246595A (ja) * 2001-02-19 2002-08-30 Shindengen Electric Mfg Co Ltd トランジスタ
JP4088063B2 (ja) * 2001-11-14 2008-05-21 株式会社東芝 パワーｍｏｓｆｅｔ装置
JP3973934B2 (ja) * 2002-03-15 2007-09-12 株式会社東芝 高耐圧半導体装置
JP5037476B2 (ja) * 2008-11-13 2012-09-26 三菱電機株式会社 半導体装置
JP6381101B2 (ja) * 2013-12-09 2018-08-29 富士電機株式会社 炭化珪素半導体装置

Also Published As

Publication number Publication date
JPH11251590A (ja) 1999-09-17

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