JPH11260778A - Single wafer type surface cleaning method and apparatus - Google Patents
Single wafer type surface cleaning method and apparatusInfo
- Publication number
- JPH11260778A JPH11260778A JP5535498A JP5535498A JPH11260778A JP H11260778 A JPH11260778 A JP H11260778A JP 5535498 A JP5535498 A JP 5535498A JP 5535498 A JP5535498 A JP 5535498A JP H11260778 A JPH11260778 A JP H11260778A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- ultrasonic
- semiconductor substrate
- wafer
- cleaning liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
(57)【要約】
【課題】 洗浄液に対して耐性を有さない超音波振動板
を用いても洗浄液に超音波を印加することができる枚葉
式表面洗浄方法及び装置を提供すること。
【解決手段】 ウェーハＷの表面に洗浄液ノズル１９か
ら洗浄液を供給すると同時に、その裏面に超音波供給ノ
ズル２１から超純水に超音波を印加した超音波印加液Ｔ
を供給し、ウェーハ表面の洗浄液に、ウェーハＷを透過
した超音波を印加する。これにより、洗浄効果を高めな
がら、洗浄液に対して耐性を有さない超音波振動板を用
いても、洗浄液に超音波を印加することができ、装置コ
ストの低減を図ることができる。
(57) [Problem] To provide a single-wafer surface cleaning method and apparatus capable of applying ultrasonic waves to a cleaning liquid even when using an ultrasonic vibration plate having no resistance to the cleaning liquid. SOLUTION: At the same time as supplying a cleaning liquid to a front surface of a wafer W from a cleaning liquid nozzle 19, an ultrasonic application liquid T is applied to the back surface by applying ultrasonic waves to ultrapure water from an ultrasonic supply nozzle 21.
Is supplied, and the ultrasonic wave transmitted through the wafer W is applied to the cleaning liquid on the wafer surface. This makes it possible to apply ultrasonic waves to the cleaning liquid even when using an ultrasonic vibration plate having no resistance to the cleaning liquid while enhancing the cleaning effect, and to reduce the apparatus cost.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体基板の表面
洗浄に好適な枚葉式表面洗浄方法及び装置に関する。The present invention relates to a single wafer type surface cleaning method and apparatus suitable for cleaning the surface of a semiconductor substrate.
【０００２】[0002]
【従来の技術】半導体デバイスの製造において、半導体
基板（以下、ウェーハとよぶ。）は、製造（処理）装置
からの汚染、クリーンルーム大気からの汚染など、製造
プロセス中にさまざまな汚染にさらされる可能性を有し
ている。それらの汚染を除去するため、ウェーハは製造
プロセス中に洗浄される。2. Description of the Related Art In the manufacture of semiconductor devices, a semiconductor substrate (hereinafter, referred to as a wafer) can be exposed to various kinds of contamination during a manufacturing process, such as contamination from a manufacturing (processing) apparatus and contamination from a clean room atmosphere. It has nature. The wafer is cleaned during the manufacturing process to remove those contaminations.
【０００３】従来、ウェーハの洗浄には、図５に示すよ
うなバッチ式多槽洗浄機（ウェットステーション）が用
いられ、例えば、アンモニア・過酸化水素混合液（ＳＣ
１液（ＡＰＭ液ともよばれる））、塩酸・過酸化水素混
合液（ＳＣ２液（ＨＰＭ液ともよばれる））、希フッ酸
などの洗浄液や超純水を入れた複数の洗浄槽に連続的に
ウェーハＷを浸漬し、洗浄を行うものである。これは、
米国ＲＣＡ社が提唱したＲＣＡ洗浄とよばれるもので、
ＳＣ１液洗浄槽１、ＳＣ２液洗浄槽３及び希フッ酸洗浄
槽５において、それぞれ、有機性汚れ・付着粒子、表面
金属不純物、及びシリコン酸化皮膜の除去を行い、最後
に乾燥槽７にてウェーハ７の乾燥を行う。なお、それぞ
れの超純水洗浄槽２、４及び６は、前工程で付着した洗
浄液の清浄を目的に用いられる。この洗浄方法は、ウェ
ーハＷを２５〜５０枚一度に処理できるのでスループッ
トも高く、現在でも半導体デバイスの製造ラインで広く
採用されている。また、この洗浄方法において、ＳＣ１
洗浄液槽１に超音波発生部１ａを設けて、８００ｋＨｚ
〜１．５ＭＨｚの周波数領域を有する超音波（メガソニ
ック）をＳＣ１洗浄液に印加することが行われている。
これによって、洗浄効果、特に微小異物（パーティク
ル）の洗浄効果を高めている。Conventionally, a batch type multi-tank cleaning machine (wet station) as shown in FIG. 5 has been used for cleaning a wafer. For example, a mixed solution of ammonia and hydrogen peroxide (SC) is used.
One wafer (also called APM solution), a mixed solution of hydrochloric acid and hydrogen peroxide (SC2 solution (also called HPM solution)), a cleaning solution such as diluted hydrofluoric acid, and a plurality of cleaning tanks containing ultrapure water. W is immersed for cleaning. this is,
This is called RCA cleaning proposed by RCA in the United States.
In the SC1 liquid cleaning tank 1, the SC2 liquid cleaning tank 3, and the diluted hydrofluoric acid cleaning tank 5, organic dirt / adhered particles, surface metal impurities, and a silicon oxide film are respectively removed. 7 is dried. Each of the ultrapure water cleaning tanks 2, 4 and 6 is used for cleaning the cleaning liquid attached in the previous step. Since this cleaning method can process 25 to 50 wafers W at a time, it has a high throughput, and is still widely used today in semiconductor device manufacturing lines. In this cleaning method, SC1
The cleaning liquid tank 1 is provided with an ultrasonic generator 1a,
Ultrasound (megasonic) having a frequency range of 1.5 MHz is applied to the SC1 cleaning liquid.
As a result, the cleaning effect, especially the cleaning effect of minute foreign matter (particles) is enhanced.
【０００４】ところが、ウェーハＷの大口径化（２００
ｍｍ〜３００ｍｍ）に伴い、洗浄槽の容量が増大してウ
ェットステーションが大型化し、さらに洗浄液や超純水
使用量、廃液量、排気量の増大によるコスト増大や地球
環境適応性の低下が避けられなくなってきている。ま
た、半導体デバイスの高集積化に伴う要求清浄度にも上
述したバッチ式多層洗浄法では追随できなくなってきて
いる。However, the diameter of the wafer W has been increased (200
mm to 300 mm), the capacity of the cleaning tank increases, the wet station becomes larger, and the increase in cost and the decrease in adaptability to the global environment due to the increase in the amount of cleaning liquid and ultrapure water used, the amount of waste liquid, and the amount of exhaust gas can be avoided. It's gone. In addition, the above-mentioned batch-type multilayer cleaning method cannot keep up with the required cleanliness accompanying the high integration of semiconductor devices.
【０００５】そこで、近年になって、枚葉式表面洗浄法
が注目され開発されてきている。この洗浄法において
は、図６に示すようにウェーハＷを１枚ずつ洗浄カップ
１０内の回転テーブル１１に載せ、ウェーハＷを回転さ
せながらノズル１２から洗浄液を供給しウェーハ表面を
洗浄する。これによれば、装置を小型化でき、また、洗
浄効果も高い。しかし、枚葉式表面洗浄法を用いて上述
のＳＣ１液やＳＣ２液を用いたＲＣＡ洗浄を行うと、洗
浄時間が長くかかり、洗浄液使用量も少なくできないた
め、最近、オゾン水と希フッ酸だけを用い、室温で洗浄
する方法が開発されてきている。この洗浄方法では、ま
ず第１ステップで、オゾン水でウェーハ表面に酸化膜を
形成し、その後の第２ステップで希フッ酸で酸化膜をエ
ッチングすることで、汚染をウェーハ表面からリフトオ
フし除去する。必要清浄度に応じてこれらのステップを
繰り返す。このオゾン水・希フッ酸繰り返し洗浄におい
て、上記超音波の印加を用いることで洗浄効果の向上が
期待できる。特に希フッ酸による汚染除去ステップでの
超音波印加は効果的であると考えられる。Therefore, in recent years, a single-wafer surface cleaning method has attracted attention and has been developed. In this cleaning method, as shown in FIG. 6, wafers W are placed one by one on a rotating table 11 in a cleaning cup 10, and a cleaning liquid is supplied from a nozzle 12 while rotating the wafer W to clean the wafer surface. According to this, the device can be miniaturized and the cleaning effect is high. However, when the RCA cleaning using the SC1 solution or the SC2 solution is performed using the single-wafer surface cleaning method, the cleaning time is long and the amount of the cleaning solution cannot be reduced. , A method of cleaning at room temperature has been developed. In this cleaning method, first, an oxide film is formed on the wafer surface with ozone water in a first step, and then the oxide film is etched with dilute hydrofluoric acid in a second step, whereby the contamination is lifted off and removed from the wafer surface. . These steps are repeated according to the required cleanliness. In this repeated cleaning of ozone water and dilute hydrofluoric acid, improvement of the cleaning effect can be expected by using the application of the above-mentioned ultrasonic waves. In particular, it is considered that the application of ultrasonic waves in the contamination removal step using diluted hydrofluoric acid is effective.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、希フッ
酸やオゾン水に超音波を印加しようとした場合、希フッ
酸に耐性があり、かつ、超音波の伝搬特性が良く、さら
にコストの低い振動板がない。例えば、ＳＣ１液用メガ
ソニックで用いられている石英では希フッ酸に耐性がな
く、また、希フッ酸に耐性を有するＰＦＡやＰＴＦＥな
どのフッ素樹脂では超音波の伝搬特性が悪く、また、超
音波のエネルギによって発熱し、変形や溶解を引き起こ
してしまう。一方、サファイアは希フッ酸の耐性及び超
音波の伝搬特性から有力であるが、コストが非常に高い
という問題がある。このように、上記３つの条件を同時
に満足する超音波振動板はなく、現在の枚葉式表面洗浄
では希フッ酸等の洗浄液を用いずに超純水に超音波を印
加して洗浄するか、非常に高価な材料で成る超音波振動
板を用いて行うしかない。However, when an ultrasonic wave is applied to dilute hydrofluoric acid or ozone water, it is resistant to dilute hydrofluoric acid, has good ultrasonic wave propagation characteristics, and has low cost vibration. There is no board. For example, quartz used in megasonic for SC1 liquid has no resistance to dilute hydrofluoric acid, and fluorine resin such as PFA or PTFE which has resistance to dilute hydrofluoric acid has poor ultrasonic wave propagation characteristics. Heat is generated by the energy of the sound waves, causing deformation and melting. On the other hand, sapphire is influential due to the resistance of dilute hydrofluoric acid and the propagation characteristics of ultrasonic waves, but has a problem that the cost is extremely high. As described above, there is no ultrasonic vibrating plate that satisfies the above three conditions at the same time. , Using an ultrasonic diaphragm made of a very expensive material.
【０００７】そこで本発明は上述の問題に鑑みてなさ
れ、洗浄液に耐性を有さない超音波振動板を用いても洗
浄液に超音波を印加することができる枚葉式表面洗浄方
法及び装置を提供することを課題とする。Accordingly, the present invention has been made in view of the above-mentioned problems, and provides a single-wafer surface cleaning method and apparatus which can apply ultrasonic waves to a cleaning solution even if an ultrasonic vibration plate having no resistance to the cleaning solution is used. The task is to
【０００８】[0008]
【課題を解決するための手段】本発明は、半導体基板の
表面に洗浄液を供給すると同時に、半導体基板の裏面に
超音波印加液を供給することにより、半導体基板を透過
した超音波を表面に伝搬させて洗浄液に印加し、当該半
導体基板の表面を洗浄するようにしている。超音波印加
液は、超音波発生部を有した超音波供給ノズルにおいて
超音波が印加されるようにする。これにより、洗浄液に
対して耐性を有さない超音波振動板を用いても効果的に
洗浄液に超音波を印加して洗浄作用を得ることができ
る。According to the present invention, an ultrasonic wave transmitted through a semiconductor substrate is transmitted to a front surface of a semiconductor substrate by supplying a cleaning liquid to the front surface of the semiconductor substrate and supplying an ultrasonic application liquid to the back surface of the semiconductor substrate. The cleaning liquid is applied to the cleaning liquid to clean the surface of the semiconductor substrate. The ultrasonic wave application liquid is made to apply ultrasonic waves to an ultrasonic wave supply nozzle having an ultrasonic wave generation part. Thereby, even if an ultrasonic vibration plate having no resistance to the cleaning liquid is used, a cleaning action can be obtained by effectively applying ultrasonic waves to the cleaning liquid.
【０００９】[0009]
【発明の実施の形態】以下、本発明の実施の形態につい
て図面を参照して説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００１０】図１は本発明の実施の形態による枚葉式表
面洗浄装置を示し、全体として１５で示される。ウェー
ハ（半導体基板）Ｗは、洗浄チャンバ１６内のウェーハ
チャック１７にその表面（素子形成面）を上方にして水
平に支持され、中空モータ１８の駆動により回転され
る。ウェーハＷの上方位置には、それぞれオゾン水及び
希フッ酸を供給する洗浄液供給ノズル１９及び２０が配
置され、ウェーハＷの半径方向（矢印Ａの方向）にスキ
ャン可能で洗浄の均一性の向上が図られている。また、
ウェーハＷの裏面に対向して超音波供給ノズル２１が配
置され、例えば中空モータ１８の静止部に固定される。FIG. 1 shows a single-wafer surface cleaning apparatus according to an embodiment of the present invention, which is indicated by reference numeral 15 as a whole. The wafer (semiconductor substrate) W is horizontally supported by a wafer chuck 17 in a cleaning chamber 16 with its surface (element formation surface) facing upward, and is rotated by driving a hollow motor 18. Cleaning liquid supply nozzles 19 and 20 for supplying ozone water and diluted hydrofluoric acid are arranged above the wafer W, respectively, and can be scanned in the radial direction of the wafer W (direction of arrow A) to improve the uniformity of cleaning. It is planned. Also,
An ultrasonic supply nozzle 21 is arranged facing the back surface of the wafer W, and is fixed to, for example, a stationary portion of the hollow motor 18.
【００１１】超音波供給ノズル２１は、ステンレスに石
英を被覆した振動板を備えた音波発生部２１ａを有し、
中空モータ１８の中空部を通る供給配管２２を介して供
給される超純水Ｐにメガソニック超音波（０．８〜１．
５ＭＭＨｚの周波数帯の超音波）を印加して超音波印加
液である超音波印加超純水とし、ウェーハＷの裏面へ向
け吐出する（矢印Ｔ）。超音波供給ノズル２１のノズル
口２１ｂは、図３に示すようにウェーハＷの半径の大き
さに略等しく、当該半径をカバーするスリット状に形成
されている。なお、メガソニック超音波は、超音波供給
ノズル２１とウェーハＷとの間の距離やウェーハＷの厚
さ、また、超純水や希フッ酸、ウェーハ中の伝搬速度を
もとに、ウェーハ表面に最も効率良く伝搬するように、
その周波数、パワーが設定される。The ultrasonic supply nozzle 21 has a sound wave generator 21a provided with a diaphragm made of stainless steel coated with quartz.
The ultrapure water P supplied through a supply pipe 22 passing through the hollow portion of the hollow motor 18 is supplied with megasonic ultrasonic waves (0.8 to 1.
Ultrasonic waves in a frequency band of 5 MHz are applied to produce ultrasonic-applied ultrapure water as an ultrasonic-applied liquid, which is discharged toward the back surface of the wafer W (arrow T). The nozzle opening 21b of the ultrasonic supply nozzle 21 is substantially equal to the radius of the wafer W as shown in FIG. 3, and is formed in a slit shape covering the radius. The megasonic ultrasonic wave is generated based on the distance between the ultrasonic supply nozzle 21 and the wafer W, the thickness of the wafer W, ultrapure water, dilute hydrofluoric acid, and the propagation speed in the wafer. So that it propagates most efficiently to
The frequency and power are set.
【００１２】次に、本実施の形態によるウェーハＷの洗
浄プロセスの詳細について、以下に説明する。Next, the details of the cleaning process of the wafer W according to the present embodiment will be described below.
【００１３】ウェーハＷは、搬送ロボットや搬送ベルト
等の図示しない搬送機構により洗浄チャンバ１６内に移
送され、ウェーハチャック１７に保持される。ウェーハ
チャック１７はウェーハＷの周縁部を支持しながら中空
モータ１８により回転を開始する。ウェーハＷを回転さ
せながら、まず、オゾン水供給ノズル１９からオゾン水
をウェーハＷの表面に供給する。これと同時に、ウェー
ハＷの裏面に超音波供給ノズル２１から超音波印加超純
水を供給する。オゾン水は５〜２０ｐｐｍの濃度のオゾ
ンが超純水に溶解したもので、これにより数十秒で約１
ｎｍの酸化膜がウェーハＷの表面上に形成される。The wafer W is transferred into the cleaning chamber 16 by a transfer mechanism (not shown) such as a transfer robot or a transfer belt, and held by the wafer chuck 17. The wafer chuck 17 starts rotating by the hollow motor 18 while supporting the peripheral portion of the wafer W. While rotating the wafer W, first, ozone water is supplied from the ozone water supply nozzle 19 to the surface of the wafer W. At the same time, ultrasonic application ultrapure water is supplied from the ultrasonic supply nozzle 21 to the back surface of the wafer W. Ozone water is a solution in which ozone at a concentration of 5 to 20 ppm is dissolved in ultrapure water.
An oxide film of nm is formed on the surface of the wafer W.
【００１４】その後、オゾン水の供給を停止し、次に希
フッ酸供給ノズル２０から希フッ酸をウェーハＷの表面
に供給する。このとき、ウェーハＷの裏面へは引き続き
超音波印加超純水が供給されている。希フッ酸は、０．
５〜１．０％のフッ酸濃度の水溶液であり、これによっ
て約１０〜１５秒で約１ｎｍの上記酸化膜がエッチング
される。この酸化膜エッチングと同時にパーティクルや
メタル汚染、有機汚染などを除去する。このとき、超純
水を介して供給されるメガソニック超音波がウェーハＷ
を透過して表面へ伝搬し（矢印Ｓ）、希フッ酸に当該メ
ガソニック超音波が印加されることにより汚染除去効果
が促進される。その後、再度オゾン水、希フッ酸の供給
をウェーハＷの必要清浄度まで繰り返す。例えば、洗浄
前に銅汚染が１×１０13原子／ｃｍ2 あったとすると、
６回繰り返しで１×１０10原子／ｃｍ2 、９回繰り返し
で１×１０9 原子／ｃｍ2 に洗浄できる。最後に、超純
水によるリンス、乾燥を行って、ウェーハＷの洗浄処理
が終了する。Thereafter, the supply of the ozone water is stopped, and then the diluted hydrofluoric acid is supplied from the diluted hydrofluoric acid supply nozzle 20 to the surface of the wafer W. At this time, the ultrasonically applied ultrapure water is continuously supplied to the back surface of the wafer W. Dilute hydrofluoric acid is 0.1
This is an aqueous solution having a hydrofluoric acid concentration of 5 to 1.0%, whereby the oxide film of about 1 nm is etched in about 10 to 15 seconds. Particles, metal contamination, organic contamination and the like are removed simultaneously with the etching of the oxide film. At this time, the megasonic ultrasonic wave supplied through the ultrapure water is applied to the wafer W
, And propagates to the surface (arrow S), and the megasonic ultrasonic wave is applied to the diluted hydrofluoric acid, thereby promoting the contamination removal effect. Thereafter, the supply of the ozone water and the diluted hydrofluoric acid is repeated until the required cleanliness of the wafer W is reached. For example, if copper contamination was 1 × 10 13 atoms / cm 2 before cleaning,
Washing can be performed to 1 × 10 10 atoms / cm 2 by repeating 6 times and 1 × 10 9 atoms / cm 2 by repeating 9 times. Finally, rinsing with ultrapure water and drying are performed, and the cleaning process of the wafer W is completed.
【００１５】以上のように、本実施の形態によれば、ウ
ェーハＷの裏面へメガソニック超音波を印加した超音波
印加超純水を供給することにより、当該メガソニック超
音波をウェーハＷの表面へ伝搬させ希フッ酸等の洗浄液
に印加するようにしているので、洗浄液に対する耐性を
有した超音波振動板を用いなくても有効にメガソニック
超音波を印加することができる。したがって、ウェーハ
表面の洗浄効果を向上させて半導体デバイスの歩留、信
頼性を向上させながら、従来用いられていた比較的安価
な材料で超音波振動板を構成することができ、装置のコ
ストを低減することができる。As described above, according to the present embodiment, the megasonic ultrasonic wave is applied to the back surface of the wafer W by supplying the ultrapure water to which the ultrasonic wave is applied. Therefore, megasonic ultrasonic waves can be effectively applied without using an ultrasonic vibration plate having resistance to the cleaning liquid. Therefore, while improving the cleaning effect of the wafer surface and improving the yield and reliability of semiconductor devices, the ultrasonic diaphragm can be composed of relatively inexpensive materials conventionally used, and the cost of the apparatus can be reduced. Can be reduced.
【００１６】以上、本発明の実施の形態について説明し
たが、勿論、本発明はこれに限定されることなく、本発
明の技術的思想に基づいて種々の変形が可能である。Although the embodiments of the present invention have been described above, the present invention is, of course, not limited thereto, and various modifications can be made based on the technical concept of the present invention.
【００１７】例えば、以上の実施の形態では、ウェーハ
Ｗの裏面に供給する超音波印加液として超純水を用いた
が、これに代えて、アンモニア・過酸化水素混合液（Ｓ
Ｃ１液）等の超音波振動板（石英製）が耐性を有する洗
浄液にメガソニック超音波を印加して、これを超音波印
加液として用いてもよい。この場合、ウェーハＷの表面
の洗浄と同時に裏面の洗浄をも行うことができる。For example, in the above embodiment, ultrapure water was used as the ultrasonic wave application liquid to be supplied to the back surface of the wafer W, but instead of this, an ammonia / hydrogen peroxide mixed solution (S
A megasonic ultrasonic wave may be applied to a cleaning liquid having an ultrasonic vibrating plate (made of quartz), such as C1 liquid), which is resistant, and this may be used as an ultrasonic wave applying liquid. In this case, the back surface cleaning can be performed simultaneously with the front surface cleaning of the wafer W.
【００１８】また、以上の実施の形態では、超音波供給
ノズル２１として、ノズル口２１ｂがウェーハＷの半径
の大きさに略等しく形成したが、これをウェーハＷの直
径の大きさに略等しくスリット状に形成し、当該直径を
カバーするように設ければ、ウェーハＷへのメガソニッ
ク超音波の供給効率を高めることができる。In the above-described embodiment, the nozzle port 21b is formed as the ultrasonic supply nozzle 21 to have a size substantially equal to the radius of the wafer W. If it is formed so as to cover the diameter, the supply efficiency of megasonic ultrasonic waves to the wafer W can be increased.
【００１９】また、超音波供給ノズル２１のノズル口２
１ｂは、上述したようにスリット状のものだけに限ら
ず、図４に示すようにスポット状に超音波印加液を供給
する超音波供給ノズル２１’として構成してもよい。こ
の場合、当該ノズル２１’をウェーハＷの半径方向（矢
印Ｂ）にスキャンでき、かつ表面側の洗浄液ノズル１９
（２０）と同期してスキャンできるものが好ましい。The nozzle port 2 of the ultrasonic supply nozzle 21
1b is not limited to the slit shape as described above, and may be configured as an ultrasonic supply nozzle 21 'for supplying an ultrasonic application liquid in a spot shape as shown in FIG. In this case, the nozzle 21 'can be scanned in the radial direction (arrow B) of the wafer W, and the cleaning liquid nozzle 19 on the front side can be scanned.
Those that can scan in synchronization with (20) are preferable.
【００２０】[0020]
【発明の効果】以上述べたように、本発明の枚葉式表面
洗浄装置によれば、希フッ酸等の洗浄液に対して耐性を
有さない超音波振動板を用いて半導体基板の表面上の洗
浄液に超音波を印加することができるので、洗浄効果、
半導体デバイスの歩留、及び信頼性を向上させながら、
装置コストの低減を図ることができる。As described above, according to the single-wafer surface cleaning apparatus of the present invention, an ultrasonic vibration plate having no resistance to a cleaning liquid such as diluted hydrofluoric acid is used to clean the surface of a semiconductor substrate. Ultrasonic waves can be applied to the cleaning solution of
While improving the yield and reliability of semiconductor devices,
Equipment cost can be reduced.
【図１】本発明の実施の形態による枚葉式表面洗浄装置
を模式的に示す断面図である。FIG. 1 is a cross-sectional view schematically showing a single-wafer surface cleaning apparatus according to an embodiment of the present invention.
【図２】図１における超音波供給ノズルの拡大断面図で
ある。FIG. 2 is an enlarged sectional view of the ultrasonic supply nozzle in FIG.
【図３】同超音波供給ノズルのノズル口を示す斜視図で
ある。FIG. 3 is a perspective view showing a nozzle opening of the ultrasonic supply nozzle.
【図４】図２の変形例を示す要部の断面図である。FIG. 4 is a sectional view of a main part showing a modification of FIG. 2;
【図５】従来のバッチ式の洗浄処理方法を示す模式図で
ある。FIG. 5 is a schematic view showing a conventional batch-type cleaning treatment method.
【図６】他の従来の枚葉式の洗浄処理装置の断面図であ
る。FIG. 6 is a sectional view of another conventional single-wafer cleaning apparatus.
１５………枚葉式表面洗浄装置、１６………洗浄カッ
プ、１７………ウェーハチャック、１８………中空モー
タ、１９、２０………洗浄液供給ノズル、２１………超
音波供給ノズル、Ｓ………メガソニック超音波の透過
波、Ｔ………超音波印加液、Ｗ………ウェーハ（半導体
基板）。15 single-wafer type surface cleaning apparatus, 16 cleaning cup, 17 wafer chuck, 18 hollow motor, 19, 20 cleaning liquid supply nozzle, 21 ultrasonic supply nozzle , S: transmitted wave of megasonic ultrasonic wave, T: liquid for applying ultrasonic wave, W: wafer (semiconductor substrate).
Claims (7)
前記半導体基板の表面に洗浄液を供給し、当該表面を洗
浄するようにした枚葉式表面洗浄方法において、 前記半導体基板の表面に前記洗浄液を供給すると同時
に、 前記半導体基板の裏面に、超音波が印加された超音波印
加液を供給することにより、 前記半導体基板の表面へ透過した前記超音波を前記洗浄
液に印加して、 前記半導体基板の表面を洗浄するようにしたことを特徴
とする枚葉式表面洗浄方法。1. While rotating a semiconductor substrate one by one,
In the single-wafer surface cleaning method in which a cleaning liquid is supplied to the surface of the semiconductor substrate and the surface is cleaned, simultaneously with supplying the cleaning liquid to the surface of the semiconductor substrate, an ultrasonic wave is applied to the back surface of the semiconductor substrate. By supplying the applied ultrasonic wave applying liquid, the ultrasonic wave transmitted to the surface of the semiconductor substrate is applied to the cleaning liquid to clean the surface of the semiconductor substrate. Type surface cleaning method.
あり、それぞれ独立して前記半導体基板の表面に供給さ
れることを特徴とする請求項１に記載の枚葉式表面洗浄
方法。2. The single wafer surface cleaning method according to claim 1, wherein the cleaning liquid is ozone water and dilute hydrofluoric acid, and each of them is independently supplied to the surface of the semiconductor substrate.
ｚから１．５ＭＨｚであることを特徴とする請求項１に
記載の枚葉式表面洗浄方法。3. The frequency range of the ultrasonic wave is 0.8 MHz.
The single-wafer surface cleaning method according to claim 1, wherein the frequency is from z to 1.5 MHz.
た超純水、又はアンモニア・過酸化水素混合液であるこ
とを特徴とする請求項１に記載の枚葉式表面洗浄方法。4. The single-wafer surface cleaning method according to claim 1, wherein the ultrasonic application liquid is ultrapure water to which ultrasonic waves have been applied, or a mixed liquid of ammonia and hydrogen peroxide.
る支持手段と、前記半導体基板の表面へ洗浄液を供給す
る洗浄液供給ノズルとを備えた枚葉式表面洗浄装置にお
いて、 超音波発生部を有し、 この超音波発生部により超音波が印加された超音波印加
液を前記半導体基板の裏面に供給する超音波供給ノズル
を設けたことを特徴とする枚葉式表面洗浄装置。5. A single-wafer surface cleaning apparatus comprising: a support means for rotatably supporting a semiconductor substrate one by one; and a cleaning liquid supply nozzle for supplying a cleaning liquid to the surface of the semiconductor substrate. A single-wafer surface cleaning apparatus, comprising: an ultrasonic supply nozzle that supplies an ultrasonic application liquid to which ultrasonic waves have been applied by the ultrasonic generator to the back surface of the semiconductor substrate.
記半導体基板の半径又は直径の大きさに略等しいスリッ
ト状に形成されることを特徴とする請求項５に記載の枚
葉式表面洗浄装置。6. The single-wafer surface cleaning according to claim 5, wherein a nozzle opening of the ultrasonic supply nozzle is formed in a slit shape substantially equal to a radius or a diameter of the semiconductor substrate. apparatus.
板の径方向に移動可能であることを特徴とする請求項５
に記載の枚葉式表面洗浄装置。7. The cleaning liquid supply nozzle is movable in a radial direction of the semiconductor substrate.
A single-wafer surface cleaning apparatus according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5535498A JPH11260778A (en) | 1998-03-06 | 1998-03-06 | Single wafer type surface cleaning method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5535498A JPH11260778A (en) | 1998-03-06 | 1998-03-06 | Single wafer type surface cleaning method and apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11260778A true JPH11260778A (en) | 1999-09-24 |
Family
ID=12996175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5535498A Pending JPH11260778A (en) | 1998-03-06 | 1998-03-06 | Single wafer type surface cleaning method and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11260778A (en) |
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| JP2001348274A (en) * | 2000-06-01 | 2001-12-18 | Bridgestone Corp | Silicon carbide sintered compact |
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| JP2007234964A (en) * | 2006-03-02 | 2007-09-13 | Siltronic Ag | Semiconductor substrate cleaning method |
| JP2008288541A (en) * | 2007-04-19 | 2008-11-27 | Pre-Tech Co Ltd | Single wafer cleaning system |
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