JPH1126413A - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor deviceInfo
- Publication number
- JPH1126413A JPH1126413A JP17951697A JP17951697A JPH1126413A JP H1126413 A JPH1126413 A JP H1126413A JP 17951697 A JP17951697 A JP 17951697A JP 17951697 A JP17951697 A JP 17951697A JP H1126413 A JPH1126413 A JP H1126413A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- wafer
- carrier
- semiconductor device
- pure water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000004140 cleaning Methods 0.000 claims abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 150000004767 nitrides Chemical class 0.000 claims abstract description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 9
- 238000007654 immersion Methods 0.000 claims abstract description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 abstract description 21
- 230000000694 effects Effects 0.000 abstract description 8
- 238000012993 chemical processing Methods 0.000 abstract description 4
- 239000000243 solution Substances 0.000 description 9
- 238000012545 processing Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000010129 solution processing Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Landscapes
- Local Oxidation Of Silicon (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
(57)【要約】
【課題】半導体装置の前洗浄方法に関する。高温薬液処
理前にウェハ及びキャリアの温度を事前に上げる事によ
り熱損失を低減し、窒化膜残りや洗浄効果低下を抑制す
ることを目的とする。
【解決手段】高温の薬液処理槽への投入初期に発生する
熱損失を低減するため、高温薬液処理槽の前槽に温純水
を供給し、高温薬液処理前にウェハとキャリアを加温す
る。ウェハ及びキャリアの温度が温純水の浸漬及び高温
の窒素ガスにより常温以上（５０℃以上）になっている
ため、高温薬液槽に投入された時点の薬液温度とウェハ
及びキャリアの温度差が小さくなり、初期の薬液温度の
低下を抑制する事が可能となる。
【効果】高温薬液槽の初期に発生する温度低下が抑制で
きる。よって窒化膜の残りや、洗浄効果の低下を防止す
る事が可能となる。
(57) [Summary] A pre-cleaning method for a semiconductor device is provided. An object of the present invention is to reduce the heat loss by raising the temperatures of the wafer and the carrier before the high-temperature chemical solution treatment, and to suppress the remaining of the nitride film and the reduction of the cleaning effect. SOLUTION: In order to reduce heat loss occurring at the initial stage of charging into a high-temperature chemical processing tank, hot pure water is supplied to a front tank of the high-temperature chemical processing tank, and the wafer and the carrier are heated before the high-temperature chemical processing. Since the temperature of the wafer and the carrier is higher than the normal temperature (50 ° C. or higher) due to the immersion of the hot pure water and the high-temperature nitrogen gas, the difference between the temperature of the wafer and the carrier at the time of being introduced into the high-temperature chemical bath becomes small, It is possible to suppress a decrease in the initial temperature of the chemical solution. [Effect] It is possible to suppress the temperature drop that occurs in the initial stage of the high-temperature chemical solution tank. Therefore, it is possible to prevent the remaining of the nitride film and the reduction of the cleaning effect.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体装置の製造
工程における前洗浄方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pre-cleaning method in a semiconductor device manufacturing process.
【０００２】[0002]
【従来の技術】従来の技術では、高温の薬液処理をする
前のウェハ及びキャリアの温度は、室温もしくは前処理
の純水洗浄温度に律速されていた。2. Description of the Related Art In the prior art, the temperature of a wafer and a carrier before a high-temperature chemical treatment is controlled by a room temperature or a pure water cleaning temperature of a pretreatment.
【０００３】素子分離形成後の窒化膜除去工程におい
て、高温の薬液処理槽にウェハ及びキャリアが投入され
た場合、初期に温度低下が発生し温度制御が不安定とな
り窒化膜の残りを発生させた。拡散、ＣＶＤ前洗浄工程
においては、洗浄効果の低下を引き起こしていた。In a nitride film removing step after element isolation, when a wafer and a carrier are put into a high-temperature chemical solution treatment tank, the temperature is lowered at an initial stage, the temperature control becomes unstable, and the nitride film remains. . In the pre-diffusion and CVD cleaning steps, the cleaning effect was reduced.
【０００４】[0004]
【発明が解決しようとする課題】従来の半導体装置の製
造方法にあっては、ウェハ及びキャリアが高温薬液処理
される初期にウェハ及びキャリアによる熱損失を受け処
理温度が一時的に低下し素子分離形成後の窒化膜除去で
窒化膜残りが発生するという問題点を有していた。In the conventional method of manufacturing a semiconductor device, the processing temperature is temporarily lowered due to the heat loss caused by the wafer and the carrier in the early stage when the wafer and the carrier are subjected to the high-temperature chemical solution treatment, and the element separation is performed. There is a problem that a nitride film remains after the removal of the nitride film after the formation.
【０００５】また、従来の半導体装置の製造方法にあっ
ては、ウェハ及びキャリアが高温薬液処理される初期に
ウェハ及びキャリアによる熱損失を受け処理温度が一時
的に低下し拡散、ＣＶＤ前洗浄において洗浄効果が低下
するという問題点を有していた。Further, in the conventional method of manufacturing a semiconductor device, the processing temperature is temporarily reduced due to heat loss due to the wafer and the carrier in the early stage when the wafer and the carrier are subjected to the high-temperature chemical treatment, and the diffusion and the cleaning before the CVD are performed. There was a problem that the cleaning effect was reduced.
【０００６】本発明は、高温薬液処理前にウェハ及びキ
ャリアの温度を事前に上げる事により熱損失を低減し、
窒化膜残りや洗浄効果低下を抑制することを目的とす
る。The present invention reduces the heat loss by raising the temperature of the wafer and the carrier before the high temperature chemical treatment,
An object of the present invention is to suppress a remaining nitride film and a decrease in cleaning effect.
【０００７】[0007]
【課題を解決するための手段】本発明は、素子分離形成
後の窒化膜除去する半導体装置の製造方法において、高
温の熱燐酸水溶液で浸漬処理前に温純水でウェハとキャ
リアの温度を５０℃以上に上げることを特徴とする半導
体装置の製造方法である。According to the present invention, there is provided a method of manufacturing a semiconductor device for removing a nitride film after forming an element isolation, wherein the temperature of a wafer and a carrier is raised to 50 ° C. or more with hot pure water before immersion treatment with a high-temperature hot phosphoric acid aqueous solution. A method for manufacturing a semiconductor device.
【０００８】拡散、ＣＶＤ前洗浄する半導体装置の製造
方法において、高温のアルカリ水溶液及び硫酸／過酸化
水素溶液で浸漬処理前に高温の窒素ガスでウェハとキャ
リアの温度を５０℃以上に上げることを特徴とする半導
体装置の製造方法である。In a method of manufacturing a semiconductor device to be cleaned before diffusion and CVD, the temperature of a wafer and a carrier is raised to 50 ° C. or more by high-temperature nitrogen gas before immersion treatment with a high-temperature alkaline aqueous solution and a sulfuric acid / hydrogen peroxide solution. This is a method for manufacturing a semiconductor device.
【０００９】[0009]
【作用】素子分離形成後の窒化膜除去する半導体装置の
製造方法において、高温の熱燐酸水溶液で浸漬処理前に
温純水でウェハとキャリアの温度を５０℃以上に上げる
ことにより、処理槽内の熱損失が小さくなり窒化膜残り
不良が解消される。拡散、ＣＶＤ前洗浄する半導体装置
の製造方法において、高温のアルカリ水溶液及び硫酸／
過酸化水素溶液で浸漬処理前に高温の窒素ガスでウェハ
とキャリアの温度を５０℃以上に上げることにより洗浄
効果の低下を防止できる。In a method of manufacturing a semiconductor device for removing a nitride film after element isolation, the temperature of a wafer and a carrier is raised to 50 ° C. or higher with hot pure water before immersion treatment with a high-temperature hot phosphoric acid aqueous solution to thereby reduce heat in a processing tank. The loss is reduced, and the residual defect of the nitride film is eliminated. In a method of manufacturing a semiconductor device to be subjected to diffusion and pre-CVD cleaning, a high-temperature alkaline aqueous solution and sulfuric acid /
By lowering the temperature of the wafer and the carrier to 50 ° C. or higher with a high-temperature nitrogen gas before the immersion treatment with the hydrogen peroxide solution, it is possible to prevent the cleaning effect from lowering.
【００１０】温純水と高温の窒素ガスウェハ及びキャリ
アの温度が高い状態で、高温薬液処理槽へ投入されるた
め処理槽内の熱損失を小さくする事が可能となる。Since the hot pure water and the high-temperature nitrogen gas wafer and the carrier are charged into the high-temperature chemical processing tank in a high temperature state, heat loss in the processing tank can be reduced.
【００１１】[0011]
【発明の実施の形態】素子分離形成後の窒化膜除去する
半導体装置の製造工程において、熱燐酸水溶液による窒
化膜除去の前に、フッ化水素水による窒化膜上の酸化膜
除去処理が存在する。酸化膜除去後の純水洗浄は、純水
度が２３〜２５℃でおこなわれている。この純水洗浄を
温純水（６０〜８０℃）に切り替え供給し、ウェハとキ
ャリアを５〜１０分浸漬する。温純水浸漬によりウェハ
とキャリアの温度は、室温（２０〜２５℃）より上昇す
る。その後、設定温度内で制御されている高温薬液処理
槽に搬送し浸漬する。ウェハ及びキャリアの温度が、温
純水の浸漬により室温以上（４０〜５０℃）になってい
るため、高温薬液処理槽に投入された時点の薬液温度と
ウェハ及びキャリアの温度差が小さくなり、高温薬液処
理槽内の熱損失を抑制する事が可能となる。DESCRIPTION OF THE PREFERRED EMBODIMENTS In a manufacturing process of a semiconductor device for removing a nitride film after element isolation, an oxide film on the nitride film is removed by a hydrogen fluoride solution before the nitride film is removed by a hot phosphoric acid solution. . The pure water cleaning after removing the oxide film is performed at a pure water level of 23 to 25 ° C. This pure water cleaning is switched to hot pure water (60 to 80 ° C.), and the wafer and the carrier are immersed for 5 to 10 minutes. The temperature of the wafer and the carrier rises from room temperature (20 to 25 ° C.) by immersion in warm pure water. Then, it is conveyed and immersed in a high-temperature chemical treatment tank controlled within a set temperature. Since the temperature of the wafer and the carrier is higher than room temperature (40 to 50 ° C.) by immersion in hot pure water, the temperature difference between the temperature of the wafer and the carrier at the time of being introduced into the high-temperature chemical solution treatment tank is reduced, and the temperature of the wafer and the carrier is reduced. Heat loss in the processing tank can be suppressed.
【００１２】拡散、ＣＶＤ前洗浄する半導体装置の製造
工程において、高温薬液処理前に高温（４０〜８０℃）
の窒素ガスをウェハ及びキャリアに５〜１０分間パ−ジ
する。高温の窒素ガスによりウェハ及びキャリアの温度
が上昇する。高温薬液処理槽に投入された時点の薬液温
度とウェハ及びキャリアの温度差が小さくなり、高温薬
液処理槽内の熱損失を抑制する事が可能となる。In a semiconductor device manufacturing process for cleaning before diffusion and CVD, a high temperature (40 to 80 ° C.) is used before a high temperature chemical treatment.
The nitrogen gas is purged onto the wafer and carrier for 5 to 10 minutes. The high temperature nitrogen gas raises the temperature of the wafer and the carrier. The difference between the temperature of the chemical solution at the time of being introduced into the high-temperature chemical solution processing tank and the temperature of the wafer and the carrier is reduced, and heat loss in the high-temperature chemical solution processing tank can be suppressed.
【００１３】[0013]
【発明の効果】本発明により、高温薬液槽の初期に発生
する温度低下や熱履歴の不安定性が抑制できる。よって
窒化膜の残りや洗浄効果の低下を防止する事が可能とな
る。According to the present invention, it is possible to suppress the temperature drop and the instability of the heat history that occur in the initial stage of the high-temperature chemical solution tank. Therefore, it is possible to prevent the remaining of the nitride film and the reduction of the cleaning effect.
【図１】高温薬液処理槽と前槽の温純水によるウェハ及
びキャリアの加温の断面図である。FIG. 1 is a cross-sectional view of heating a wafer and a carrier with hot pure water in a high-temperature chemical treatment tank and a front tank.
【図２】高温薬液処理槽と高温の窒素ガスによるウェハ
及びキャリアの加温の断面図である。FIG. 2 is a cross-sectional view of heating a wafer and a carrier by a high-temperature chemical solution treatment tank and a high-temperature nitrogen gas.
【図３】ウェハ及びキャリア加温の有無による高温薬液
処理初期の温度プロファイルである。FIG. 3 is a temperature profile in an initial stage of a high-temperature chemical solution treatment depending on whether or not a wafer and a carrier are heated.
１．ウェハ及びキャリア ２．温純水槽 ３．温純水供給口 ４．搬送軌道 ５．高温薬液循環槽システム ６．高温窒素ガス供給口 ７．薬液処理設定温度 ８．従来の温度フ゜ロファイル ９．ウェハ及びキャリア加温有りの温度フ゜ロファイル 1. 1. Wafer and carrier Hot pure water tank 3. 3. Hot pure water supply port Transport track 5. High-temperature chemical liquid circulation tank system 6. 6. High-temperature nitrogen gas supply port 7. Chemical treatment set temperature Conventional temperature profile 9. Temperature profile with wafer and carrier heating
Claims (2)
置の製造方法において、高温の熱燐酸水溶液で浸漬処理
前に温純水でウェハとキャリアの温度を５０℃以上に上
げること特徴とする半導体装置の製造方法。In a method of manufacturing a semiconductor device for removing a nitride film after element isolation formation, the temperature of a wafer and a carrier is raised to 50 ° C. or higher with hot pure water before immersion treatment with a high-temperature hot phosphoric acid aqueous solution. Manufacturing method.
方法において、高温のアルカリ水溶液及び硫酸／過酸化
水素溶液で浸漬処理前に高温の窒素ガスでウェハとキャ
リアの温度を５０℃以上に上げることを特徴とする半導
体装置の製造方法。2. A method of manufacturing a semiconductor device for cleaning before diffusion and CVD, wherein the temperature of a wafer and a carrier is raised to 50 ° C. or more by high-temperature nitrogen gas before immersion treatment with a high-temperature alkaline aqueous solution and a sulfuric acid / hydrogen peroxide solution. A method for manufacturing a semiconductor device, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17951697A JPH1126413A (en) | 1997-07-04 | 1997-07-04 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17951697A JPH1126413A (en) | 1997-07-04 | 1997-07-04 | Method for manufacturing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1126413A true JPH1126413A (en) | 1999-01-29 |
Family
ID=16067163
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17951697A Withdrawn JPH1126413A (en) | 1997-07-04 | 1997-07-04 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1126413A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000069575A1 (en) * | 1999-05-18 | 2000-11-23 | Memc Electronic Materials, Inc. | Method and apparatus for washing a wafer carrier |
| JP2009004675A (en) * | 2007-06-25 | 2009-01-08 | Shin Etsu Handotai Co Ltd | Etching method and device for silicon wafer |
| JP2012186221A (en) * | 2011-03-03 | 2012-09-27 | Tokyo Electron Ltd | Etching method, etching apparatus, and storage medium |
| JP2015230910A (en) * | 2014-06-03 | 2015-12-21 | 三菱電機株式会社 | Device and method for manufacturing photovoltaic element |
-
1997
- 1997-07-04 JP JP17951697A patent/JPH1126413A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000069575A1 (en) * | 1999-05-18 | 2000-11-23 | Memc Electronic Materials, Inc. | Method and apparatus for washing a wafer carrier |
| JP2009004675A (en) * | 2007-06-25 | 2009-01-08 | Shin Etsu Handotai Co Ltd | Etching method and device for silicon wafer |
| JP2012186221A (en) * | 2011-03-03 | 2012-09-27 | Tokyo Electron Ltd | Etching method, etching apparatus, and storage medium |
| JP2015230910A (en) * | 2014-06-03 | 2015-12-21 | 三菱電機株式会社 | Device and method for manufacturing photovoltaic element |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20040907 |