JPH11265501A - Magnetic recording and reproducing system - Google Patents
Magnetic recording and reproducing systemInfo
- Publication number
- JPH11265501A JPH11265501A JP6551098A JP6551098A JPH11265501A JP H11265501 A JPH11265501 A JP H11265501A JP 6551098 A JP6551098 A JP 6551098A JP 6551098 A JP6551098 A JP 6551098A JP H11265501 A JPH11265501 A JP H11265501A
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetic
- head
- thin film
- recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 72
- 239000010408 film Substances 0.000 claims abstract description 113
- 239000010409 thin film Substances 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 21
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 abstract description 8
- 239000000314 lubricant Substances 0.000 description 14
- 230000001681 protective effect Effects 0.000 description 14
- 239000011347 resin Substances 0.000 description 12
- 229920005989 resin Polymers 0.000 description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 11
- 229910052799 carbon Inorganic materials 0.000 description 10
- 239000000178 monomer Substances 0.000 description 9
- 229920001721 polyimide Polymers 0.000 description 9
- 239000004642 Polyimide Substances 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 229910021385 hard carbon Inorganic materials 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000956 alloy Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000945 filler Substances 0.000 description 5
- 150000003949 imides Chemical class 0.000 description 5
- -1 polyethylene terephthalate Polymers 0.000 description 5
- 239000004215 Carbon black (E152) Substances 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 150000002430 hydrocarbons Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 125000002947 alkylene group Chemical group 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000003112 inhibitor Substances 0.000 description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 3
- 239000010702 perfluoropolyether Chemical group 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- KDCGOANMDULRCW-UHFFFAOYSA-N 7H-purine Chemical compound N1=CNC2=NC=NC2=C1 KDCGOANMDULRCW-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 229910000684 Cobalt-chrome Inorganic materials 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- 239000005069 Extreme pressure additive Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000003610 charcoal Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010952 cobalt-chrome Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 125000002993 cycloalkylene group Chemical group 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000007756 gravure coating Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000001050 lubricating effect Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- GLDOVTGHNKAZLK-UHFFFAOYSA-N octadecan-1-ol Chemical compound CCCCCCCCCCCCCCCCCCO GLDOVTGHNKAZLK-UHFFFAOYSA-N 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- ALSTYHKOOCGGFT-KTKRTIGZSA-N (9Z)-octadecen-1-ol Chemical compound CCCCCCCC\C=C/CCCCCCCCO ALSTYHKOOCGGFT-KTKRTIGZSA-N 0.000 description 1
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- QMMJWQMCMRUYTG-UHFFFAOYSA-N 1,2,4,5-tetrachloro-3-(trifluoromethyl)benzene Chemical compound FC(F)(F)C1=C(Cl)C(Cl)=CC(Cl)=C1Cl QMMJWQMCMRUYTG-UHFFFAOYSA-N 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- LOUICXNAWQPGSU-UHFFFAOYSA-N 2,2,3,3-tetrafluorooxirane Chemical compound FC1(F)OC1(F)F LOUICXNAWQPGSU-UHFFFAOYSA-N 0.000 description 1
- IRLYGRLEBKCYPY-UHFFFAOYSA-N 2,5-dimethylbenzenesulfonic acid Chemical compound CC1=CC=C(C)C(S(O)(=O)=O)=C1 IRLYGRLEBKCYPY-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- ONMOULMPIIOVTQ-UHFFFAOYSA-M 3-Nitrobenzene sulphonate Chemical compound [O-][N+](=O)C1=CC=CC(S([O-])(=O)=O)=C1 ONMOULMPIIOVTQ-UHFFFAOYSA-M 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910000943 NiAl Inorganic materials 0.000 description 1
- REYJJPSVUYRZGE-UHFFFAOYSA-N Octadecylamine Chemical compound CCCCCCCCCCCCCCCCCCN REYJJPSVUYRZGE-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 description 1
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000004450 alkenylene group Chemical group 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- LUFPJJNWMYZRQE-UHFFFAOYSA-N benzylsulfanylmethylbenzene Chemical compound C=1C=CC=CC=1CSCC1=CC=CC=C1 LUFPJJNWMYZRQE-UHFFFAOYSA-N 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- IYRWEQXVUNLMAY-UHFFFAOYSA-N carbonyl fluoride Chemical compound FC(F)=O IYRWEQXVUNLMAY-UHFFFAOYSA-N 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 125000001033 ether group Chemical group 0.000 description 1
- 125000005677 ethinylene group Chemical group [*:2]C#C[*:1] 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 125000003709 fluoroalkyl group Chemical group 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- KJDJPXUIZYHXEZ-UHFFFAOYSA-N hydrogen sulfate;methylaminoazanium Chemical compound CN[NH3+].OS([O-])(=O)=O KJDJPXUIZYHXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 125000005647 linker group Chemical group 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- VUQUOGPMUUJORT-UHFFFAOYSA-N methyl 4-methylbenzenesulfonate Chemical compound COS(=O)(=O)C1=CC=C(C)C=C1 VUQUOGPMUUJORT-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- GOQYKNQRPGWPLP-UHFFFAOYSA-N n-heptadecyl alcohol Natural products CCCCCCCCCCCCCCCCCO GOQYKNQRPGWPLP-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- LYRFLYHAGKPMFH-UHFFFAOYSA-N octadecanamide Chemical compound CCCCCCCCCCCCCCCCCC(N)=O LYRFLYHAGKPMFH-UHFFFAOYSA-N 0.000 description 1
- CACRRXGTWZXOAU-UHFFFAOYSA-N octadecane-1-sulfonic acid Chemical compound CCCCCCCCCCCCCCCCCCS(O)(=O)=O CACRRXGTWZXOAU-UHFFFAOYSA-N 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- UHGIMQLJWRAPLT-UHFFFAOYSA-N octadecyl dihydrogen phosphate Chemical compound CCCCCCCCCCCCCCCCCCOP(O)(O)=O UHGIMQLJWRAPLT-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 229940055577 oleyl alcohol Drugs 0.000 description 1
- XMLQWXUVTXCDDL-UHFFFAOYSA-N oleyl alcohol Natural products CCCCCCC=CCCCCCCCCCCO XMLQWXUVTXCDDL-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- AQSJGOWTSHOLKH-UHFFFAOYSA-N phosphite(3-) Chemical class [O-]P([O-])[O-] AQSJGOWTSHOLKH-UHFFFAOYSA-N 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920002577 polybenzoxazole Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-O pyridinium Chemical compound C1=CC=[NH+]C=C1 JUJWROOIHBZHMG-UHFFFAOYSA-O 0.000 description 1
- ZDYVRSLAEXCVBX-UHFFFAOYSA-N pyridinium p-toluenesulfonate Chemical compound C1=CC=[NH+]C=C1.CC1=CC=C(S([O-])(=O)=O)C=C1 ZDYVRSLAEXCVBX-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- ZEMGGZBWXRYJHK-UHFFFAOYSA-N thiouracil Chemical class O=C1C=CNC(=S)N1 ZEMGGZBWXRYJHK-UHFFFAOYSA-N 0.000 description 1
- 229910003470 tongbaite Inorganic materials 0.000 description 1
- OHRVKCZTBPSUIK-UHFFFAOYSA-N tridodecyl phosphate Chemical compound CCCCCCCCCCCCOP(=O)(OCCCCCCCCCCCC)OCCCCCCCCCCCC OHRVKCZTBPSUIK-UHFFFAOYSA-N 0.000 description 1
- IVIIAEVMQHEPAY-UHFFFAOYSA-N tridodecyl phosphite Chemical compound CCCCCCCCCCCCOP(OCCCCCCCCCCCC)OCCCCCCCCCCCC IVIIAEVMQHEPAY-UHFFFAOYSA-N 0.000 description 1
- JZNDMMGBXUYFNQ-UHFFFAOYSA-N tris(dodecylsulfanyl)phosphane Chemical compound CCCCCCCCCCCCSP(SCCCCCCCCCCCC)SCCCCCCCCCCCC JZNDMMGBXUYFNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Landscapes
- Magnetic Record Carriers (AREA)
- Magnetic Heads (AREA)
- Recording Or Reproducing By Magnetic Means (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は強磁性金属薄膜と可
撓性支持体を有する高密度フロッピーディスク(FD)
と、MR(磁気抵抗型)ヘッドを用いた再生を行う磁気
記録再生システムに関する。The present invention relates to a high-density floppy disk (FD) having a ferromagnetic metal thin film and a flexible support.
And a magnetic recording / reproducing system for performing reproduction using an MR (magnetoresistive) head.
【0002】[0002]
【従来の技術】超高密度記録ディスクの1つであるハー
ドディスク(HD)においてはスパッタ法で作成した強
磁性金属薄膜を記録層とすることとMRヘッドを用いる
ことで高密度記録を実現している。MRヘッドを使用し
た磁気記録再生システムとしてはアルミ板やガラス板な
どの合成基板上に強磁性金属薄膜の磁性層を有する媒体
上にヘッドを浮上させて直接磁性層に接触しないように
して、5000〜7000回転の高速回転させる方式で
ある。そのような記録再生システムにより、高容量で高
転送レートを実現してパソコンの外部記憶媒体として普
及している。2. Description of the Related Art In a hard disk (HD), which is one of ultra-high-density recording disks, high-density recording is realized by using a ferromagnetic metal thin film formed by a sputtering method as a recording layer and using an MR head. I have. As a magnetic recording / reproducing system using an MR head, a head is floated on a medium having a magnetic layer of a ferromagnetic metal thin film on a synthetic substrate such as an aluminum plate or a glass plate so that the head does not come into direct contact with the magnetic layer. This is a method of rotating at a high speed of up to 7000 rotations. Such a recording / reproducing system realizes a high capacity and a high transfer rate, and is widely used as an external storage medium of a personal computer.
【0003】MRヘッドは高感度、即ち高い出力を提供
するが、媒体とヘッドが接触した場合、ヘッドの温度上
昇に伴って、出力のベースラインが上昇し、読みとりエ
ラーを生じる。このような現象は、いわゆるサーマルア
スペリティ(以後TAと略す)として知られている。従
ってHDではこの接触が生じないようにヘッドを媒体か
ら離すこと、磁気ディスクの基板を厚く且つ剛性の高い
材質を用いてディスクが安定するようにして、ヘッドと
ディスクの接触を防いでいる。しかし、この基板の剛性
の高さが逆に衝突した場合の衝撃の強さとなり、前述し
たベースラインの大きな上昇を生じる原因ともなってい
る。更に、ヘッド又はディスクの破損にも結びつく結果
となる。HDは通常、固定形態で使用することで、上記
の難しさを乗り越え実用となっている。また、HDの問
題点として、基板の仕上げのためにどうしても高価にな
ること、また、基板が剛直であるので衝撃などの外力を
吸収しにくく、ヘッドから衝撃により磁性層が傷ついた
り、付着したゴミやほこりでも磁性層に傷が付きやす
い。[0003] Although the MR head provides high sensitivity, that is, high output, when the head comes in contact with the medium, the output baseline increases as the temperature of the head increases, causing a reading error. Such a phenomenon is known as so-called thermal asperity (hereinafter abbreviated as TA). Therefore, in the HD, the head is separated from the medium so that this contact does not occur, and the contact between the head and the disk is prevented by stabilizing the disk by using a thick and highly rigid material for the substrate of the magnetic disk. However, the high rigidity of the substrate adversely affects the impact in the event of a collision, which causes the above-described large rise in the baseline. Furthermore, the result is that the head or the disk is damaged. HD is usually used in a fixed form to overcome the above difficulties and become practical. In addition, the problem with HD is that it is inevitably expensive to finish the substrate, and because the substrate is rigid, it is difficult to absorb external force such as impact, and the magnetic layer is damaged by the impact from the head or dust attached thereto. The magnetic layer is easily damaged by dust and dust.
【0004】磁気記録媒体はFDにように可換であるこ
とが望まれるが、この場合は媒体を移動するためにどう
しても衝撃が生じ、ヘッドと媒体との接触が起こる機会
が増す。従って、HDのように剛直な基板を有する媒体
は、致命的な障害となる懸念を有している。且つHDは
高価格であるとの欠点も有している。可撓性基板を用い
たFDは、MRヘッドが実用化された後も、MRヘッド
固有の問題(TAの発生、静電気に弱い、素子が薄いた
め接触に弱い)のため約0.1Gbit/inch2 の記録密度
程度のものしか実用化出来ていないのが現状であり、更
に高密度の磁気記録再生システムが望まれていた。この
TAの発生は、高回転にすると媒体が可撓性であるため
にMRヘッドが磁性層表面に当たる頻度がHDより高
く、その当たりによりMRヘッドに生じた熱により抵抗
が変わって出力が瞬間的に変化し、しかもその熱が元に
戻るのに時間が掛かるのでその間、出力レベルが変化す
る頻度が増加するのである。また、MRヘッドと磁気記
録ディスクとの当たりにより両者がダメージを受け易く
耐久性が低いという問題があった。It is desired that the magnetic recording medium is interchangeable like the FD, but in this case, an impact is inevitably caused to move the medium, and the chance of contact between the head and the medium increases. Therefore, a medium having a rigid substrate such as HD has a concern that it may be a fatal obstacle. HD also has the disadvantage of being expensive. Even after the MR head is put to practical use, the FD using the flexible substrate is about 0.1 Gbit / inch due to problems inherent to the MR head (the generation of TA, weak to static electricity, and weak to contact due to thin elements). At present, only a recording density of about 2 has been practically used, and a magnetic recording / reproducing system with a higher density has been desired. The occurrence of TA is caused by the fact that the medium is flexible when the rotation speed is high, so that the frequency at which the MR head hits the magnetic layer surface is higher than HD. , And it takes time for the heat to return to its original state, during which time the output level changes more frequently. In addition, there is a problem that both are easily damaged due to the contact between the MR head and the magnetic recording disk and the durability is low.
【0005】[0005]
【発明が解決しようとする課題】本発明は、可撓性支持
体のFDを用いて、TAの発生を抑制すると共に耐久性
を高め、かつ安価な高回転で使用する高密度な記録再生
が可能な磁気記録再生システムを提供することを目的と
する。SUMMARY OF THE INVENTION According to the present invention, a high-density recording / reproducing method which uses a flexible support FD to suppress the generation of TA and enhance the durability and is inexpensive and used at a high rotation speed is provided. It is an object of the present invention to provide a possible magnetic recording / reproducing system.
【0006】[0006]
【課題を解決するための手段】本発明の目的は、可撓性
支持体の両面に少なくとも真空成膜法により形成された
強磁性金属薄膜を設けた磁気ディスクを回転可能な状態
でカートリッジに収納させた状態で3000rpm以上
に回転させて記録を行い、MR(磁気抵抗型)ヘッドで
再生を行う磁気記録再生システムにおいて、該可撓性支
持体上に真空成膜法で形成された薄膜の合計厚さ(t)
が0.08〜0.36μmであり、該可撓性支持体の厚
さ(d)が30〜100μmであり、さらに、(t3/
d3)が3.5×10-7〜1×10-9であって、該強磁
性金属薄膜の表面には微小な突起があることを特徴とす
る磁気記録再生システムにより達成できる。SUMMARY OF THE INVENTION It is an object of the present invention to provide a cartridge in which a magnetic disk having at least a ferromagnetic metal thin film formed on both surfaces of a flexible support by a vacuum film forming method is rotatable in a cartridge. In a magnetic recording / reproducing system in which recording is performed by rotating at 3000 rpm or more in a state where the recording medium is rotated and reproduction is performed using an MR (magnetoresistive) head, a total of thin films formed on the flexible support by a vacuum film forming method is used. Thickness (t)
Is 0.08 to 0.36 μm, the thickness (d) of the flexible support is 30 to 100 μm, and (t 3 /
d 3 ) is 3.5 × 10 −7 to 1 × 10 −9 , and the magnetic recording / reproducing system is characterized in that the ferromagnetic metal thin film has fine projections on its surface.
【0007】本発明は、まず、強磁性金属薄膜(以下、
「磁性膜」ともいう)表面に摩擦係数を低下するための
微小な突起(以下、「微小突起」という)を形成しヘッ
ドが衝突したとしてもその影響が軽減されるようにす
る。そして、本発明は、可撓性支持体の厚さ(d)と支
持体上に真空成膜法で形成される薄膜の合計厚さ(t)
を特定範囲にして、さらに(t3/d3)を特定して媒体
全体の剛直性を特定範囲に規定することによりMRヘッ
ドの衝撃を適度に和らげ、かつ、媒体の面ブレが生じな
い程度に剛性を保持させたことを特徴とする。The present invention first provides a ferromagnetic metal thin film (hereinafter, referred to as a ferromagnetic metal thin film).
Small protrusions (hereinafter, referred to as "fine protrusions") for reducing the friction coefficient are formed on the surface of the "magnetic film" so that the influence of the head colliding is reduced. Further, according to the present invention, the thickness (d) of the flexible support and the total thickness (t) of the thin film formed on the support by the vacuum film formation method are described.
Is defined as a specific range, and (t 3 / d 3 ) is further specified to define the rigidity of the entire medium in the specific range, so that the impact of the MR head is moderately moderated and the medium is not blurred. Characterized by maintaining rigidity.
【0008】本発明では、上記構成によりMRヘッドと
磁気ディスク間のスペーシングを好適に選定することに
より、高出力を得ることができる。また、MRヘッドは
素子の厚みが薄いため、接触に弱い、メカニズム上熱に
弱い、弱点を有するが、本発明は、接触を出来るだけ避
けることが出きると共に接触した場合でもTAのレベル
を少なくし、かつ磁気記録ディスクがMRヘッドに強く
当たらないので、両者の耐久性が向上する。In the present invention, high output can be obtained by suitably selecting the spacing between the MR head and the magnetic disk by the above configuration. In addition, the MR head has weak points due to the small thickness of the element, so that it is weak to contact and mechanically weak to heat.However, according to the present invention, it is possible to avoid contact as much as possible and to reduce the TA level even when contact is made. In addition, since the magnetic recording disk does not strongly hit the MR head, the durability of both is improved.
【0009】また、本発明は、記録再生上からも再生ア
ンプの飽和の問題からは、通常の出力の約3倍までは信
号処理で、TAを取り除くことは可能である。 即ち、
本発明は、TA発生を少なく、且つ発生したときのレベ
ルの上昇を少なくでき、信号処理で十分その部分を補償
する事が出来ると共に耐久性を確保することができる。Further, according to the present invention, it is possible to remove TA by signal processing up to about three times the normal output from the problem of saturation of the reproduction amplifier even in recording and reproduction. That is,
ADVANTAGE OF THE INVENTION This invention can reduce TA generation | occurrence | production and the rise of the level when it generate | occur | produces, can fully compensate the part by signal processing, and can ensure durability.
【0010】本発明において、薄膜の合計厚さ(t)と
は、真空成膜法により可撓性支持体の両面上に設けられ
る任意の薄膜の全ての合計を意味し、少なくとも磁性膜
を含む。tは、0.08〜0.36μm、好ましくは
0.06〜0.15μm/片面の範囲である。薄膜は、
磁性膜のみでもよいが、好ましくは、可撓性支持体上に
順次、下地膜、磁性膜、保護膜を設けることが好まし
い。これら各々の薄膜は、単膜でも組成乃至結晶構造の
異なる複膜でもよく、また、所望によりこれら薄膜の形
成順序を任意に選定してもよい。In the present invention, the total thickness (t) of the thin film means the total of all the arbitrary thin films provided on both surfaces of the flexible support by the vacuum film forming method, and includes at least the magnetic film. . t is in the range of 0.08 to 0.36 μm, preferably 0.06 to 0.15 μm / one side. The thin film is
Although only a magnetic film may be used, it is preferable to provide a base film, a magnetic film, and a protective film sequentially on a flexible support. Each of these thin films may be a single film or a multiple film having a different composition or crystal structure, and the order of forming these thin films may be arbitrarily selected as desired.
【0011】また、本発明において、可撓性支持体の厚
さ(d)は、30〜100μm、好ましくは45〜95
μm/片面の範囲である。また、本発明は、(t3/
d3)が3.5×10-7〜1×10-9、好ましくは1×
10-7〜2×10-9の範囲である。本発明において、t
とdに上記のように適切な範囲があることのメカニズム
は、定かではないが、以下のように推測している。In the present invention, the thickness (d) of the flexible support is 30 to 100 μm, preferably 45 to 95 μm.
μm / one side. Further, the present invention provides (t 3 /
d 3 ) is from 3.5 × 10 −7 to 1 × 10 −9 , preferably 1 × 10 −9
The range is 10 -7 to 2 × 10 -9 . In the present invention, t
Although the mechanism of the appropriate range of d and d as described above is not clear, it is speculated as follows.
【0012】本システムではヘッドと磁気記録媒体が接
触するため、高速回転時のその薄膜の強度が影響する。
又、薄膜は、内部歪みを有しているため、tが厚すぎる
とその影響が大きく現れ、平坦な磁気ディスクとなら
ず、ヘッドに接触した場合の衝撃強度が強く、ヘッド及
び磁気ディスクにダメージが入りやすい。又、tが厚す
ぎると膜の内部歪みが大きくなり、ある膜厚以上で密着
力を凌いでしまうか又は近づくため、少しの外部力が働
いたときに膜剥がれが生じ易くなる。逆にtが薄すぎる
と真空成膜自体の膜強度が十分でなく、ヘッドとの接触
で膜にダメージが生じ易くなる。また、面ブレが生じ易
くなる。In this system, since the head and the magnetic recording medium come into contact with each other, the strength of the thin film during high-speed rotation has an effect.
In addition, since the thin film has internal strain, if the thickness is too large, the effect will be significant, and it will not be a flat magnetic disk, but the impact strength when contacting the head is strong, and the head and the magnetic disk will be damaged. Is easy to enter. On the other hand, if the thickness t is too large, the internal strain of the film becomes large, and the film exceeds or approaches the adhesion at a certain film thickness or more. Therefore, when a small external force acts, the film is easily peeled. On the other hand, if t is too thin, the film strength of the vacuum film formation itself is not sufficient, and the film is likely to be damaged by contact with the head. In addition, surface blur is likely to occur.
【0013】一方、可撓性支持体は弾性を有している。
この弾性が薄膜の内部歪みの吸収を起こす利点とヘッド
との接触時に可撓性支持体が縮み、いわばクッション効
果を生んでいる可能性を有する。しかし、dが厚すぎる
と磁気ディスク全体としては硬くなり曲がり難くなるた
め、回転時に受ける遠心力により平坦化の効果が享受で
きない。そのため、一旦ヘッドと接触した場合の衝撃力
も強く、緩和作用が低下して大きなTAの発生と共にヘ
ッドと磁性膜にダメージが生じることが考えられる。On the other hand, the flexible support has elasticity.
This elasticity has the advantage of absorbing the internal strain of the thin film and the possibility that the flexible support shrinks at the time of contact with the head, thus producing a cushion effect. However, if d is too thick, the magnetic disk as a whole becomes hard and difficult to bend, so that the effect of flattening cannot be enjoyed due to the centrifugal force applied during rotation. For this reason, it is conceivable that the impact force once in contact with the head is strong, the relaxation effect is reduced, and a large TA is generated and the head and the magnetic film are damaged.
【0014】dが薄い場合は回転により平坦化し易い利
点を有するが、薄膜の内部歪みを吸収する許容度が小さ
いことから、回転前から平坦な形状に作成しずらくな
る。このため磁気ディスク全体の内部歪みが大きく現
れ、回転時に不均一な空気流を受けていわゆるバタ着き
(面ブレ)が生じる。また、TAも多く発生する。薄膜
は弾性が無く、硬いため、膜厚効果が薄い領域で現れ
る。可撓性支持体は弾性を有しているため、しなやかで
薄膜の内部歪みを吸収する利点も有するが、厚すぎると
磁気ディスク全体の曲げ硬さが上がりすぎる。このため
両者のバランスが不可欠になる。真空成膜の厚みの3乗
と高分子支持体の厚みの3乗の関係が、見出されたのも
上記のメカニズムに起因していると推定している。When d is thin, it has the advantage that it can be easily flattened by rotation, but it is difficult to create a flat shape before rotation because the tolerance for absorbing internal strain of the thin film is small. For this reason, a large internal distortion of the entire magnetic disk appears, and a so-called flutter (surface blur) occurs due to an uneven air flow during rotation. In addition, many TAs are generated. Since the thin film has no elasticity and is hard, it appears in a region where the film thickness effect is small. Since the flexible support has elasticity, it also has the advantage of being flexible and absorbing internal strain of the thin film. However, if it is too thick, the bending hardness of the entire magnetic disk becomes too high. For this reason, a balance between the two becomes essential. It is presumed that the relationship between the cube of the thickness of the vacuum film formation and the cube of the thickness of the polymer support was found due to the above mechanism.
【0015】次に磁性膜の表面に設けられる微小突起に
ついて説明する。本発明において、微小突起とは、磁性
膜表面をAFM(原子間力顕微鏡)で観察される高さ
が、1〜50nm、好ましくは5〜40nmのものを言
う。微小突起の形状は、特に制限されるべきものではな
く、表面を垂直方向から見て円形が好ましいが、楕円形
であっても良い。Next, the fine projections provided on the surface of the magnetic film will be described. In the present invention, the term “microprojection” refers to a magnetic film surface having a height of 1 to 50 nm, preferably 5 to 40 nm, as observed by an AFM (atomic force microscope). The shape of the fine projection is not particularly limited, and is preferably circular when the surface is viewed from the vertical direction, but may be elliptical.
【0016】本発明においては、微小突起の存在の態
様、例えば、微小突起の分布、微小突起の密度等を制御
することにより、上記本発明の目的を効果的に達成する
ことができる。例えば、微小突起の分布については、あ
る方向に偏在して微小突起密度を高く乃至低くし、摩擦
係数低減作用に加え、薄膜の内部応力を調整する手段と
して使用することも可能である。微小突起密度は、通
常、0.05〜10個/μm2 、好ましくは0.1〜1
0個/μm2 の範囲に調整される。In the present invention, the object of the present invention can be effectively achieved by controlling the mode of existence of the fine projections, for example, the distribution of the fine projections, the density of the fine projections, and the like. For example, regarding the distribution of the fine projections, the density of the fine projections may be unevenly distributed in a certain direction to increase or decrease the density of the fine projections, and it may be used as a means for adjusting the internal stress of the thin film in addition to the effect of reducing the friction coefficient. The microprojection density is usually 0.05 to 10 / μm 2 , preferably 0.1 to 1
It is adjusted to a range of 0 pieces / μm 2 .
【0017】微小突起密度の調整手段としては、特に制
限されるべきものではないが、可撓性支持体の表面性を
調整する手段が好適な手段として挙げられる。可撓性支
持体の表面性を調整する具体的方法としては、フィルム
ベースに耐熱性微粒子(フィラー)を含む樹脂からなる
下塗り膜を設けることが好ましい態様として例示され
る。この場合、フィルムベースが十分に平滑であること
が好ましく、そうでない場合は、耐熱性微粒子を含まな
い樹脂のみの下塗り膜aを設け、そして更にその下塗り
膜aの上に上記フィラーを含む樹脂からなる下塗り膜b
を設けることが好ましい。The means for adjusting the density of the microprojections is not particularly limited, but a means for adjusting the surface properties of the flexible support is preferred. As a specific method for adjusting the surface properties of the flexible support, a preferred embodiment is to provide an undercoat film made of a resin containing heat-resistant fine particles (filler) on a film base. In this case, it is preferable that the film base is sufficiently smooth. Otherwise, the undercoat film a containing only the resin containing no heat-resistant fine particles is provided, and the resin containing the filler is further provided on the undercoat film a. Undercoat film b
Is preferably provided.
【0018】下塗り膜aおよび/または下塗り膜bに用
いられる樹脂としては、特に制限されるべきものではな
いが、フィルムベースと同種の樹脂が好ましい。これら
樹脂は、ポリマーの状態で用いることもできるが、フィ
ルムベース上でポリマー化し得る樹脂モノマーの状態で
使用することが好ましく、下塗り膜aの場合は、樹脂モ
ノマーを溶剤に溶解した塗料を、下塗り膜bの場合は、
フィラーを含む樹脂モノマー塗料を調製してこれをフィ
ルムベース上に塗布することにより同フィルムベース上
に形成することができる。The resin used for the undercoat film a and / or the undercoat film b is not particularly limited, but is preferably the same type of resin as that of the film base. These resins can be used in the form of a polymer, but are preferably used in the form of a resin monomer that can be polymerized on a film base. In the case of the undercoat film a, a coating obtained by dissolving the resin monomer in a solvent is used for undercoating. In the case of membrane b,
By preparing a resin monomer paint containing a filler and applying it on a film base, it can be formed on the film base.
【0019】例えば、分子内に末端不飽和基を2つ以上
有するイミドモノマーの重合物であるポリイミド樹脂を
主成分とする下塗り膜とすることができ、さらに前記イ
ミドモノマーを下記化学式1で表されるビスアリルナジ
イミドとすることでより優れた特性を達成することがで
きる。For example, an undercoating film mainly composed of a polyimide resin, which is a polymer of an imide monomer having two or more terminal unsaturated groups in the molecule, can be used as an undercoating film, and the imide monomer is represented by the following chemical formula 1. Bisallyl nadimide can achieve more excellent properties.
【0020】[0020]
【化1】 式中、R1 、R2 は独立に選択された水素またはメチル
基、R3 は脂肪族または芳香族の炭化水素基等の2価の
連結基であって特に限定はされず、例えば直鎖または分
岐構造のアルキレン基およびアルケニレン基、シクロア
ルキレン基、アルキレン基を有するシクロアルキレン
基、芳香族基、アルキレン基を有する芳香族基、ポリオ
キシアルキレン基、カルボニル基、エーテル基等などが
あげられる。Embedded image In the formula, R 1 and R 2 are independently selected hydrogen or a methyl group, and R 3 is a divalent linking group such as an aliphatic or aromatic hydrocarbon group and is not particularly limited. Or an alkylene group and alkenylene group having a branched structure, a cycloalkylene group, a cycloalkylene group having an alkylene group, an aromatic group, an aromatic group having an alkylene group, a polyoxyalkylene group, a carbonyl group, an ether group, and the like.
【0021】下塗り膜の厚さは、通常、0〜5μm/片
面、好ましくは0.5〜3μm/片面の範囲である。ま
た、ベースに元々微小突起がついており、粗大突起がな
い場合は、下塗り膜はなくても良い。また下塗り膜塗料
には樹脂モノマーやフィラー以外の成分が含有されてい
ても良い。例えば重合を促進するための硬化剤、密着を
改善するためのカップリング剤、磁性膜の酸化を防止す
る防錆剤等を含有させることができる。The thickness of the undercoat film is usually in the range of 0 to 5 μm / one side, preferably 0.5 to 3 μm / one side. In the case where the base originally has fine projections and no coarse projections, the undercoat film may not be provided. Further, the undercoat film paint may contain components other than the resin monomer and the filler. For example, a curing agent for promoting polymerization, a coupling agent for improving adhesion, a rust inhibitor for preventing oxidation of the magnetic film, and the like can be contained.
【0022】硬化剤としてはpートルエンスルホン酸、
pーキシレンスルホン酸、トルエンスルホン酸メチル、
ピリジニウムpートルエンスルホネート、ピリジニウム
mーニトロベンゼンスルホネート、硫酸メチルヒドラジ
ンなどが使用できる。また可撓性支持体の表面に微小突
起を設けるためのフィラーとしてはシリカ、アルミナ、
チタニア、ジルコニアなどの無機酸化物、炭酸カルシウ
ム、炭素、樹脂等の高分子有機化合物などが挙げられ
る。この形状としては単分散で球状であることが好まし
い。その粒子径は上記微小突起の大きさに応じて適宜選
定される。As a curing agent, p-toluenesulfonic acid,
p-xylene sulfonic acid, methyl toluene sulfonate,
Pyridinium p-toluenesulfonate, pyridinium m-nitrobenzenesulfonate, methylhydrazine sulfate and the like can be used. In addition, as a filler for providing fine projections on the surface of the flexible support, silica, alumina,
Examples include inorganic oxides such as titania and zirconia, and high molecular organic compounds such as calcium carbonate, carbon, and resin. The shape is preferably monodisperse and spherical. The particle diameter is appropriately selected according to the size of the fine projections.
【0023】フィルムベースとしては、ポリエチレンテ
レフタレート、ポリエチレンナフタレート、ポリイミ
ド、ポリアミド、ポリアミドイミド、ポリベンゾキシア
ゾール等の材料が挙げられるが、高密度記録を行うため
に熱収縮そのもの及びその異方性が少ないことが望まれ
る。磁性膜は成膜時に高温に保つことが好ましいため耐
熱高分子が望ましい。従って上記の中でもポリイミド、
ポリアミドが好ましい。Examples of the film base include materials such as polyethylene terephthalate, polyethylene naphthalate, polyimide, polyamide, polyamide imide, and polybenzoxazole. It is desirable that there be few. Since the magnetic film is preferably kept at a high temperature during film formation, a heat-resistant polymer is desirable. Therefore among the above polyimide,
Polyamides are preferred.
【0024】本発明のシステムは、記録用の電磁誘導を
動作原理とする磁気ヘッド(インダクティブヘッド)と
再生用のMRヘッドを一体化したヘッド、即ち、マージ
型MRヘッドを用いても、記録と再生を別のヘッドを用
いても良いが、記録再生の安定性、価格の点からマージ
型を用いる方が好ましい。また、MRのタイプには通常
の構成のAMRとスピンバルブ等のGMRがあるが、ど
ちらでもかまわない。また 他の構造形態としてMR素
子の磁気ディスク側に磁束の通路を設けたヨーク型MR
でも、MR素子2つを別位相で取り込むデュアルストラ
イプ型MRでも良い。The system of the present invention can be used for recording and reproducing even if a magnetic head (inductive head) based on the principle of electromagnetic induction for recording and an MR head for reproduction are integrated, that is, a merge type MR head is used. Although another head may be used for reproduction, it is preferable to use the merge type from the viewpoint of recording / reproduction stability and price. In addition, the MR type includes an AMR having a normal configuration and a GMR such as a spin valve, but either type may be used. As another structural form, a yoke type MR in which a magnetic flux path is provided on the magnetic disk side of the MR element.
However, a dual stripe type MR that takes in two MR elements at different phases may be used.
【0025】磁気ディスクの回転数は一般に高速ほど、
転送速度が上がるため、高速が望ましい。また回転によ
る風の流れにより磁気ディスクが平坦化される効果も有
するため、3000rpm以上に設定される。高すぎる
と磁気ディスクに面ブレが生じる可能性があるため、3
000〜7000rpmが好ましい。次に本発明に使用
される磁気ディスクの構成について述べる。In general, the higher the rotation speed of the magnetic disk,
A high speed is desirable because the transfer speed increases. Further, since the magnetic disk is also flattened by the flow of the wind due to the rotation, the rotation speed is set to 3000 rpm or more. If it is too high, the surface of the magnetic disk may fluctuate.
000-7000 rpm is preferred. Next, the configuration of the magnetic disk used in the present invention will be described.
【0026】高記録密度を得るために、かつ磁性膜の配
向を制御するために磁性膜と可撓性支持体の間に下地膜
があることが望ましい。下地膜材料としては、Cr、C
r合金例えばつぎの金属との合金、Ti、Mo、V,T
a、B、Si、及びMoまたはMoと上記の元素との合
金等が好ましい。In order to obtain a high recording density and to control the orientation of the magnetic film, it is desirable that there is a base film between the magnetic film and the flexible support. Cr, C
r alloys such as alloys with the following metals, Ti, Mo, V, T
a, B, Si, Mo, or an alloy of Mo with the above elements is preferable.
【0027】下地膜の厚さは、磁気ディスク片面に通
常、0.01〜0.15μm、好ましくは0.03〜
0.10μmである。また、この上に設けられる磁性膜
の結晶性を高めるために非磁性のCrが30原子%より
多く含有するCoCrを更に別の下地膜として複膜構造
として設けることが好ましい。またAl、NiAl、N
iP等を下地膜の最下部(可撓性支持体上)に用いても
磁性膜の微粒子化に役立つ。The thickness of the underlayer is usually 0.01 to 0.15 μm, preferably 0.03 to 0.15 μm on one side of the magnetic disk.
0.10 μm. Further, in order to enhance the crystallinity of the magnetic film provided thereon, it is preferable to provide CoCr containing more than 30 atomic% of nonmagnetic Cr as a further underlayer as a multi-layer structure. Al, NiAl, N
Even if iP or the like is used at the lowermost portion (on the flexible support) of the base film, it is useful for making the magnetic film finer.
【0028】磁性膜材料としては、CoCr合金、特に
Pt、Ta、Ni、Si、B、Ni、Nb、W、Ti、
Oとの合金、中でもCo−Cr−Pt、Co−Cr−P
t−Ta、Co−Cr−Pt−Ta−Nbが好ましい。
また、更に特性を改良するために必要に応じてSiO2
とCoのように非磁性物質と強磁性物質を共にスパッタ
リングしてもよい。As the magnetic film material, a CoCr alloy, particularly Pt, Ta, Ni, Si, B, Ni, Nb, W, Ti,
Alloy with O, especially Co-Cr-Pt, Co-Cr-P
t-Ta and Co-Cr-Pt-Ta-Nb are preferred.
If necessary, further improve the properties by using SiO 2
A nonmagnetic material and a ferromagnetic material such as Co and Co may be sputtered together.
【0029】この磁性膜の厚さは、磁気ディスク片面に
好ましくは0.01〜0.10μm、特に好ましくは
0.015〜0.030μmである。下地膜と磁性膜は
共に真空成膜法で設けることが好ましい。真空成膜法と
しては、真空蒸着法や、スパッタリングが挙げられる
が、特にスパッタリングが多くの元素の組成を変えるこ
となく成膜できるため好ましい。The thickness of the magnetic film on one side of the magnetic disk is preferably 0.01 to 0.10 μm, particularly preferably 0.015 to 0.030 μm. It is preferable that both the base film and the magnetic film are provided by a vacuum film forming method. Examples of the vacuum film formation method include a vacuum deposition method and sputtering. Sputtering is particularly preferable because a film can be formed without changing the composition of many elements.
【0030】またスパッタ法で磁性膜を作成する場合に
は、支持体を加熱した状態で成膜する事が好ましく、そ
のときの温度は100℃〜250℃が好適である。ま
た、本発明の磁性膜は電磁変換特性を改善するため重層
構成としても良い。また、磁性膜上には薄膜として、保
護膜を設けることが好ましい。保護膜としてはシリカ、
アルミナ、チタニア、ジルコニア、酸化コバルト、酸化
ニッケルなどの酸化物、窒化チタン、窒化ケイ素、窒化
ホウ素などの窒化物、炭化ケイ素、炭化クロム、炭化ホ
ウ素等の炭化物、グラファイト、無定型カーボンなどの
炭素からなる保護膜が挙げられる。When a magnetic film is formed by a sputtering method, it is preferable to form the film while the support is heated, and the temperature at that time is preferably 100 ° C. to 250 ° C. Further, the magnetic film of the present invention may have a multilayer structure in order to improve electromagnetic conversion characteristics. Further, it is preferable to provide a protective film as a thin film on the magnetic film. Silica as a protective film,
From oxides such as alumina, titania, zirconia, cobalt oxide and nickel oxide, nitrides such as titanium nitride, silicon nitride and boron nitride, carbides such as silicon carbide, chromium carbide and boron carbide, and carbon such as graphite and amorphous carbon Protective film.
【0031】前記炭素保護膜は、プラズマCVD法、ス
パッタリング法等で作成したアモルファス、グラファイ
ト、ダイヤモンド構造、もしくはこれらの混合物からな
るカーボン膜であり、特に好ましくは一般にダイヤモン
ドライクカーボンと呼ばれる硬質カーボン膜である。こ
の硬質炭素膜はビッカース硬度で1000kg/mm 2
以上、好ましくは2000kg/mm2 以上の硬質の炭
素膜である。また、その結晶構造はアモルファス構造で
あり、かつ非導電性である。そして、ダイヤモンド状炭
素膜の構造をラマン光分光分析によって測定した場合に
は、1520〜1560cm-1にピークが検出されるこ
とによって確認することができる。炭素膜の構造がダイ
ヤモンド状構造からずれてくるとラマン光分光分析によ
り検出されるピークが上記範囲からずれるとともに、炭
素膜の硬度も低下する。 この硬質炭素保護膜はメタ
ン、エタン、プロパン、ブタン等のアルカン、あるいは
エチレン、プロピレン等のアルケン、またはアセチレン
等のアルキンをはじめとした炭素含有化合物を原料とし
たプラズマCVDや、水素や炭化水素雰囲気下で炭素を
ターゲットとしたスパッタリング等によって形成するこ
とができる。The carbon protective film is formed by a plasma CVD method,
Amorphous and graphite created by the sputtering method, etc.
Or diamond structures, or a mixture of these.
Carbon film, particularly preferably a diamond film.
It is a hard carbon film called dry carbon. This
Hard carbon film has a Vickers hardness of 1000 kg / mm Two
Above, preferably 2000 kg / mmTwoHard charcoal over
It is a base film. The crystal structure is amorphous.
And non-conductive. And diamond-like charcoal
When the structure of the base film is measured by Raman spectroscopy
Is 1520-1560cm-1That peaks are detected
And can be confirmed by: Carbon film structure is die
When it deviates from the diamond-like structure, Raman spectroscopy
Detected peaks deviate from the above range,
The hardness of the base film also decreases. This hard carbon protective film is meta
Alkanes such as ethane, ethane, propane, butane, or
Alkenes such as ethylene and propylene, or acetylene
From carbon-containing compounds such as alkynes
Plasma CVD or carbon under hydrogen or hydrocarbon atmosphere
The target is formed by sputtering or the like.
Can be.
【0032】炭素膜には、H、F、Nなどを含ませても
良い。硬質炭素保護膜の膜厚が厚いと電磁変換特性の悪
化や磁性膜に対する密着性の低下が生じ、膜厚が薄いと
耐磨耗性が不足するために、磁気ディスク片面の保護膜
膜厚は0.0025〜0.03μmが好ましく、とくに
好ましくは0.005〜0.010μmである。The carbon film may contain H, F, N and the like. If the thickness of the hard carbon protective film is large, the electromagnetic conversion characteristics are deteriorated and the adhesion to the magnetic film is deteriorated. If the film thickness is small, the abrasion resistance is insufficient. It is preferably from 0.0025 to 0.03 μm, and particularly preferably from 0.005 to 0.010 μm.
【0033】また、この硬質炭素保護膜上に付与する潤
滑剤との密着をさらに向上させる目的で硬質炭素保護膜
表面を酸化性もしくは不活性気体によって表面処理して
も良い。本発明の磁気記録媒体において、走行耐久性お
よび耐食性を改善するため、上記磁性膜もしくは保護膜
上に潤滑剤や防錆剤を付与することが好ましい。Further, the surface of the hard carbon protective film may be treated with an oxidizing or inert gas for the purpose of further improving the adhesion with the lubricant applied on the hard carbon protective film. In the magnetic recording medium of the present invention, in order to improve running durability and corrosion resistance, it is preferable to add a lubricant or a rust inhibitor to the magnetic film or the protective film.
【0034】潤滑剤としては公知の炭化水素系潤滑剤、
フッ素系潤滑剤、極圧添加剤などが使用できる。炭化水
素系潤滑剤としてはステアリン酸、オレイン酸等のカル
ボン酸類、ステアリン酸ブチル等のエステル類、オクタ
デシルスルホン酸等のスルホン酸類、リン酸モノオクタ
デシル等のリン酸エステル類、ステアリルアルコール、
オレイルアルコール等のアルコール類、ステアリン酸ア
ミド等のカルボン酸アミド類、ステアリルアミン等のア
ミン類などが挙げられる。As the lubricant, a known hydrocarbon-based lubricant,
Fluorine-based lubricants, extreme pressure additives and the like can be used. Examples of hydrocarbon-based lubricants include stearic acid, carboxylic acids such as oleic acid, esters such as butyl stearate, sulfonic acids such as octadecylsulfonic acid, phosphates such as monooctadecyl phosphate, stearyl alcohol,
Examples thereof include alcohols such as oleyl alcohol, carboxylic acid amides such as stearic acid amide, and amines such as stearylamine.
【0035】フッ素系潤滑剤としては上記炭化水素系潤
滑剤のアルキル基の一部または全部をフルオロアルキル
基もしくはパーフルオロポリエーテル基で置換した潤滑
剤が挙げられる。パーフルオロポリエーテル基としては
パーフルオロメチレンオキシド重合体、パーフルオロ
エチレンオキシド重合体、パーフルオロ−n−プロピレ
ンオキシド重合体(CF2 CF2 CF2 O)n 、パーフ
ルオロイソプロピレンオキシド重合体(CF(CF3 )
CF2 O)n またはこれらの共重合体等である。Examples of the fluorine-based lubricant include lubricants in which part or all of the alkyl group of the hydrocarbon-based lubricant is substituted with a fluoroalkyl group or a perfluoropolyether group. Examples of the perfluoropolyether group include a perfluoromethylene oxide polymer, a perfluoroethylene oxide polymer, a perfluoro-n-propylene oxide polymer (CF 2 CF 2 CF 2 O) n , and a perfluoroisopropylene oxide polymer (CF ( CF 3 )
CF 2 O) n or a copolymer thereof.
【0036】極圧添加剤としてはリン酸トリラウリル等
のリン酸エステル類、亜リン酸トリラウリル等の亜リン
酸エステル類、トリチオ亜リン酸トリラウリル等のチオ
亜リン酸エステルやチオリン酸エステル類、二硫化ジベ
ンジル等の硫黄系極圧剤などが挙げられる。上記潤滑剤
は単独もしくは複数を併用して使用される。これらの潤
滑剤を磁性膜もしくは保護膜上に付与する方法としては
潤滑剤を有機溶剤に溶解し、ワイヤーバー法、グラビア
法、スピンコート法、ディップコート法等で塗布する
か、真空蒸着法によって付着させればよい。Examples of extreme pressure additives include phosphoric esters such as trilauryl phosphate, phosphites such as trilauryl phosphite, thiophosphites and thiophosphoric esters such as trilauryl trithiophosphite, and the like. And sulfur-based extreme pressure agents such as dibenzyl sulfide. The above lubricants are used alone or in combination of two or more. As a method of applying these lubricants on a magnetic film or a protective film, a lubricant is dissolved in an organic solvent and applied by a wire bar method, a gravure method, a spin coating method, a dip coating method, or a vacuum evaporation method. What is necessary is just to make it adhere.
【0037】潤滑剤の塗布量としては1〜30mg/m
2 が好ましく、2〜20mg/m2が特に好ましい。本
発明で使用できる防錆剤としてはベンゾトリアゾール、
ベンズイミダゾール、プリン、ピリミジン等の窒素含有
複素環類およびこれらの母核にアルキル側鎖等を導入し
た誘導体、ベンゾチアゾール、2−メルカプトンベンゾ
チアゾール、テトラザインデン環化合物、チオウラシル
化合物等の窒素および硫黄含有複素環類およびこの誘導
体等が挙げられる。The amount of the lubricant to be applied is 1 to 30 mg / m
2 is preferable, and 2 to 20 mg / m 2 is particularly preferable. Benzotriazole, as a rust inhibitor that can be used in the present invention,
Nitrogen-containing heterocycles such as benzimidazole, purine and pyrimidine and derivatives having an alkyl side chain introduced into their mother nucleus, benzothiazole, 2-mercaptone benzothiazole, tetrazaindene ring compounds, nitrogen such as thiouracil compounds, Examples include sulfur-containing heterocycles and derivatives thereof.
【0038】本発明において、磁気ディスクのサイズと
しては3.5吋から1.8吋までの仕様に適する。In the present invention, the size of the magnetic disk is suitable for the specification from 3.5 inches to 1.8 inches.
【0039】[0039]
【実施例】以下、本発明の具体的実施例を説明するが、
本発明はこれに限定されるものではない。 実施例1 ベース厚み(b)75μmのポリイミド(PI)(三菱
化成(株)ノバックス)上にポリイミドアミド(PI
A)樹脂(東洋紡社製MT5050)をエタノールとト
ルエンの混合溶剤に溶解し、固形分濃度10重量%の塗
布液を作成した。これをグラビアコート法で塗布した
後、100℃で乾燥し、1.5μmの膜厚の下塗り膜を
作成した。更にこの上に粒子径20nmの球状シリカ粒
子を0.005重量%含有した上記塗布液を塗布し、1
00℃で乾燥し、下塗り膜上に微小突起を形成した。つ
いで300℃で5分加熱し、硬化と脱溶剤処理を行っ
た。ベースの反対面に同様な膜の形成を行った。これに
より両面の下塗り膜の厚さの合計(u)が3.0μm、
可撓性支持体の厚さ(d)が78μmのものを作成し
た。Hereinafter, specific examples of the present invention will be described.
The present invention is not limited to this. Example 1 A polyimide amide (PI) was coated on a polyimide (PI) having a base thickness (b) of 75 μm (Mitsubishi Kasei Corporation Novax).
A) A resin (MT5050 manufactured by Toyobo Co., Ltd.) was dissolved in a mixed solvent of ethanol and toluene to prepare a coating solution having a solid content of 10% by weight. After this was applied by a gravure coating method, it was dried at 100 ° C. to form an undercoat film having a thickness of 1.5 μm. Further, the above coating solution containing 0.005% by weight of spherical silica particles having a particle diameter of 20 nm was applied thereon, and
It dried at 00 degreeC, and formed the fine protrusion on the undercoat film. Then, the mixture was heated at 300 ° C. for 5 minutes to perform curing and solvent removal treatment. A similar film was formed on the opposite surface of the base. Thereby, the total (u) of the thicknesses of the undercoat films on both sides is 3.0 μm,
A flexible support having a thickness (d) of 78 μm was prepared.
【0040】このフィルムをスパッタ装置に設置し、基
板温度200℃でDCマグネトロンスパッタ法を用いて
Cr−Ti下地膜を0.06μm成膜し、さらに引き続
きCoーCr−Pt―Ta磁性膜を0.03μm成膜し
た。次にこのフィルムをプラズマCVD装置に設置し、
磁性膜上にエチレンを原料としたプラズマCVD法で硬
質炭素保護膜を0.02μm成膜した。次にこの保護膜
上にパーフルオロポリエーテル系潤滑剤(アウジモント
社製FOMBLINZ−DOL)をフッ素系溶剤(住友
3M社製FCー77)に溶解した溶液をディップコート
法で塗布して厚み2nmの潤滑膜を作成した。この下地
膜、磁性膜、保護膜、潤滑膜はフィルムの両面に対して
成膜し、薄膜の合計厚さ(t)を0.22μmとした。
これを2.5吋のディスクに打ち抜き、ライナーを有す
るカートリッジに挿入し、実施例1の試料を得た。This film was set in a sputtering apparatus, and a Cr—Ti underlayer was formed to a thickness of 0.06 μm using a DC magnetron sputtering method at a substrate temperature of 200 ° C., and a Co—Cr—Pt—Ta magnetic film was further formed to a thickness of 0 μm. .03 μm was formed. Next, this film is set in a plasma CVD apparatus,
A hard carbon protective film having a thickness of 0.02 μm was formed on the magnetic film by a plasma CVD method using ethylene as a raw material. Next, a solution obtained by dissolving a perfluoropolyether-based lubricant (FOMBLINZ-DOL manufactured by Ausimont) in a fluorine-based solvent (FC-77 manufactured by Sumitomo 3M) was applied on the protective film by dip coating to form a 2 nm thick film. A lubricating film was formed. The base film, the magnetic film, the protective film, and the lubricating film were formed on both sides of the film, and the total thickness (t) of the thin film was 0.22 μm.
This was punched out into a 2.5-inch disk and inserted into a cartridge having a liner to obtain a sample of Example 1.
【0041】実施例2〜7、比較例1〜10 実施例1と同じ作成方法で下地膜材料、磁性膜材料を変
更した以外は厚みを変えてサンプルを作成した(表1及
び2)。 実施例8〜13 イミドモノマー(丸善石油化学社製BANI−NB)を
トルエンに溶解した溶液をグラビアコート法で塗布した
後、100℃で乾燥して塗膜を作成し、次に塗膜を22
0℃で1時間加熱し、イミドモノマーを重合を行いポリ
イミド(PI)の下塗り膜を作成し、更にこの上に球状
シリカ粒子を含有する上記イミドモノマー溶液を塗布
し、下塗り膜上に微小突起を形成した。その後、可撓性
支持体上に実施例1と同様に薄膜を作成した。Examples 2 to 7 and Comparative Examples 1 to 10 Samples were prepared in the same manner as in Example 1 except that the material of the underlayer and the material of the magnetic film were changed, but the thickness was changed (Tables 1 and 2). Examples 8 to 13 A solution obtained by dissolving an imide monomer (BANI-NB manufactured by Maruzen Petrochemical Co., Ltd.) in toluene was applied by a gravure coating method, and then dried at 100 ° C. to form a coating film.
Heat at 0 ° C. for 1 hour to polymerize the imide monomer to form an undercoat film of polyimide (PI), and further apply the imide monomer solution containing spherical silica particles thereon to form fine protrusions on the undercoat film. Formed. Thereafter, a thin film was formed on the flexible support in the same manner as in Example 1.
【0042】以上の試料を以下により評価した。 TA(頻度、大きさ):トラック幅5μm、ギャップ長
0.3μmのインダクティブヘッド、トラック幅3μ
m、ギャップ長0.3μmのMRヘッドが一体となった
マージ型MRヘッドを用いて4000rpmで140KF
RPIの記録再生を行った。TAの頻度は、1周の再生信
号を10回測定し、平均して、1周1回当たりの発生回
数を求めた。TAの大きさ(信号強度)は、オシロスコ
ープのエンベロープの平均の値を求めた。The above samples were evaluated as follows. TA (frequency, size): inductive head with track width of 5 μm and gap length of 0.3 μm, track width of 3 μm
140 KF at 4000 rpm using a merged MR head with an integrated MR head with a gap length of 0.3 μm
RPI recording and playback was performed. The frequency of TA was obtained by measuring the reproduced signal in one round ten times and averaging the number of occurrences per round. The average value of the envelope of the oscilloscope was determined for the magnitude of TA (signal intensity).
【0043】モジュレーション:上記記録再生におい
て、TAの発生が無いときのレベルはエンベロープを写
真でとり{C(max)-C(min)}/{C(max)+C(min)}でモデ
ュレーションとした。尚、この際、TAは除外した。再
生波形の1周における最大値をC(max)、最小値をC(min)
とした。Modulation: In the above recording / reproduction, the level when no TA is generated is obtained by taking a photo of the envelope and modulating it by {C (max) -C (min)} / {C (max) + C (min)}. And At this time, TA was excluded. The maximum value in one round of the playback waveform is C (max) and the minimum value is C (min)
And
【0044】連続耐久性:常温常湿で2レールのテーパ
ーフラット型ヘッドを用い、3600rpmで回転しな
がら、再生信号をモニターし、その値が初期の値から6
dB以上低下するまでの値とした。結果を表3に示す。Continuous durability: Using a two-rail taper flat type head at normal temperature and normal humidity, while rotating at 3600 rpm, a reproduction signal was monitored, and the value was 6 from the initial value.
It was a value until it decreased by dB or more. Table 3 shows the results.
【0045】[0045]
【表1】 [Table 1]
【0046】[0046]
【表2】 [Table 2]
【0047】[0047]
【表3】 上記の結果から、本発明の実施例は連続耐久性、TA及
びモジュレーションの全てに優れた特性を示し、本発明
により高い耐久性と良好なヘッド当たりが実現できたこ
とがわかる。一方、可撓性支持体の厚さ、薄膜の合計厚
さ及び(t3/d3)の少なくとも1つを満足しない比較
例は、連続耐久性、TA及びモジュレーションを全て良
好に満足するものは得られず、少なくとも1つは本発明
よりも劣ることが分かる。[Table 3] From the above results, it can be seen that the examples of the present invention exhibited excellent properties in all of continuous durability, TA and modulation, and that high durability and good head contact were realized by the present invention. On the other hand, the comparative examples that do not satisfy at least one of the thickness of the flexible support, the total thickness of the thin film, and (t 3 / d 3 ) are those that satisfy all of the continuous durability, TA, and modulation. It was found that at least one was inferior to the present invention.
【0048】[0048]
【発明の効果】本発明は、可撓性支持体の両面に少なく
とも真空成膜法により形成された強磁性金属薄膜を設け
た磁気ディスクを回転可能な状態でカートリッジに収納
させた状態で3000rpm以上に回転させて記録を行
い、MR(磁気抵抗型)ヘッドで再生を行う磁気記録再
生システムにおいて、該可撓性支持体上に真空成膜法で
形成された薄膜の合計厚さ(t)を0.08〜0.36
μm、該可撓性支持体の厚さ(d)を30〜100μ
m、さらに、(t3/d3)を3.5×10-7〜1×10
-9とし、該強磁性金属薄膜の表面に微小突起を設けるこ
とにより、TAの発生を抑制すると共に耐久性を高め、
かつ安価な高回転で使用する高密度な記録再生が可能な
磁気記録再生システムを提供することができる。According to the present invention, a magnetic disk having at least a ferromagnetic metal thin film formed on both sides of a flexible support by a vacuum film forming method is stored in a cartridge in a rotatable state at 3000 rpm or more. In a magnetic recording / reproducing system in which recording is performed by rotating the magnetic recording medium and reproduction is performed using an MR (magnetoresistive) head, the total thickness (t) of the thin film formed on the flexible support by a vacuum film formation method is determined. 0.08-0.36
μm, and the thickness (d) of the flexible support is 30 to 100 μm.
m, and (t 3 / d 3 ) is changed from 3.5 × 10 −7 to 1 × 10
-9, and by providing minute projections on the surface of the ferromagnetic metal thin film, suppress generation of TA and increase durability,
It is also possible to provide a magnetic recording / reproducing system which is inexpensive and can be used at a high rotation speed and capable of high-density recording and reproduction.
Claims (1)
膜法により形成された強磁性金属薄膜を設けた磁気ディ
スクを回転可能な状態でカートリッジに収納させた状態
で3000rpm以上に回転させて記録を行い、MR
(磁気抵抗型)ヘッドで再生を行う磁気記録再生システ
ムにおいて、該可撓性支持体上に真空成膜法で形成され
た薄膜の合計厚さ(t)が0.08〜0.36μmであ
り、該可撓性支持体の厚さ(d)が30〜100μmで
あり、さらに、(t3/d3)が3.5×10-7〜1×1
0-9であって、該強磁性金属薄膜の表面には微小な突起
があることを特徴とする磁気記録再生システム。1. A magnetic disk provided with at least a ferromagnetic metal thin film formed on both sides of a flexible support by a vacuum film forming method is rotated at 3000 rpm or more while being rotatably housed in a cartridge. Make a record and MR
(Magnetic resistance type) In a magnetic recording / reproducing system for reproducing with a head, a total thickness (t) of a thin film formed on the flexible support by a vacuum film forming method is 0.08 to 0.36 μm. The thickness (d) of the flexible support is 30 to 100 μm, and (t 3 / d 3 ) is 3.5 × 10 −7 to 1 × 1.
A 0 -9, magnetic recording and reproducing system, characterized in that the surface of the ferromagnetic metal thin film has minute protrusions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6551098A JPH11265501A (en) | 1998-03-16 | 1998-03-16 | Magnetic recording and reproducing system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6551098A JPH11265501A (en) | 1998-03-16 | 1998-03-16 | Magnetic recording and reproducing system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11265501A true JPH11265501A (en) | 1999-09-28 |
Family
ID=13289135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6551098A Pending JPH11265501A (en) | 1998-03-16 | 1998-03-16 | Magnetic recording and reproducing system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11265501A (en) |
-
1998
- 1998-03-16 JP JP6551098A patent/JPH11265501A/en active Pending
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