JPH1126887A - Semiconductor laser with diamond heat dissipation component - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce manufacturing cost of a diamond heat dissipating part and to prevent deterioration of a performance caused by thermal stress, by joining a heat dissipating part of a specified thickness formed into a plate-like substrate shape with a wax material of a specified thickness. SOLUTION: A semiconductor laser 1 and a vapor phase synthetic diamond 4 of a thickness 3-9 μm formed on a plate-like substrate 5 are joined together with a wax material 2 of a thickness 2-8 μm, so that a thermal stress generated in a semiconductor element 1 is relaxed. The cost is significantly reduced compared with a conventional diamond because the maximum thickness is 9 μm. Not only reduce the cost but also a diamond film is made thin to prevent thermal stress. The diamond synthesized on the substrate 5 in a vapor phase synthetic manner is rough in the surface, and usually it is not fit for mounting on the semiconductor element if it is used as it is. However, in a thin film of the film thickness of the diamond 3-9 μm, a desired surface roughness is achieved even when especially no process is performed after synthesis.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor laser having a diamond heat radiating component. In particular, the present invention relates to a structure of a semiconductor laser whose performance is enhanced by relaxing thermal stress generated between the semiconductor laser and a diamond heat dissipation component.

[0002]

2. Description of the Related Art With the recent development of the information and communication society,
2. Description of the Related Art Large-capacity information transmission technologies such as multi-channel transmission such as ATV and long-distance trunk transmission / reception using a submarine cable have been actively developed. High-power semiconductor lasers are indispensable for transmitting large-capacity information, and the demand for them is increasing year by year. In order to maintain stable oscillation of these high-power semiconductor lasers, high-performance heat radiation components are required. The heat dissipating component is also called a heat sink.

As a matter of course, a material having high thermal conductivity is suitable for the heat radiating component. Metallic materials are used for heat sinks. For example, CuW or the like (Japanese Patent Laid-Open No. 1-187991,
JP-A-2-257689) A metal material having good thermal conductivity is used. However, the thermal conductivity of metal is not so high that it may not be enough to cool a semiconductor laser that generates heat.

The material with the highest thermal conductivity of matter is diamond. Diamond is expensive, but has excellent thermal conductivity, so that it has begun to be used slightly as a heat radiating component for semiconductor lasers.

Japanese Patent Application Laid-Open No. Hei 5-13843 proposes a semiconductor laser in which diamond is formed only on a stem and a semiconductor laser is brazed on the diamond only on a stem. The thickness of the diamond film is 10 μm to 500 μm. Since the thickness of the diamond affects the heat dissipation performance, the diamond film
It has to be 0 μm or more. However, it does not mention the thickness of the brazing material. No problem is noticed due to the difference in the coefficient of thermal expansion between the semiconductor laser and the diamond radiator plate.

Japanese Patent Application Laid-Open No. 8-195367 “Wafer and Method for Producing the Same” proposes a large-diameter wafer with diamond in which a diamond film is formed on a substrate such as Si. This is a warped wafer. It is not necessarily a heat sink for semiconductor lasers. There is no mention of the difference in the coefficient of thermal expansion between the semiconductor laser and the wafer.

Japanese Patent Application Laid-Open No. 48-79338, entitled "Heat-radiating electrode and its manufacturing method", uses diamond itself as a heat sink, and imparts electrical conductivity by coating chromium, platinum, and gold on natural diamond. The objects to be cooled are the input diode and the gun diode, not the semiconductor laser.

Japanese Unexamined Patent Publication No. 49-99482 discloses a method for assembling a microminiature semiconductor electronic device, which is a metallized natural diamond sphere having an almost spherical shape and a slightly flat surface on the top, and mounting a gun diode. is there. It is said that it is a spherical diamond and has better cooling capacity than a rectangular parallelepiped. However, this is not a cooling mechanism for the semiconductor laser.

Japanese Patent Application Laid-Open No. 50-67582 discloses a method of manufacturing a semiconductor device in which a natural diamond block is buried by digging a hole in a Cu block, and a semiconductor element such as an imput diode is generated thereon.
It does not use a thin diamond film synthesized by vapor phase.
Cracks due to the difference in the coefficient of thermal expansion between diamond and the element are not considered.

Japanese Utility Model Application Laid-Open No. 53-118470 discloses a "semiconductor device" in which a carbon film on diamond is formed on a Cu substrate and gold-plated, and a light emitting diode is fixed thereon. In this case, the chip is insulated by the carbon film. The diode is bonded to the gold layer, not brazed to the diamond film.

Japanese Patent Application Laid-Open No. Sho 63-41055 discloses a "radiation structure of semiconductor device" in which a diamond film having a thickness of 10 μm is formed on a Si substrate, a gold film is formed, and a chip is bonded using gold as solder. I have.

Japanese Unexamined Patent Publication No. Hei 2-26057 "radiator plate"
Metal oxides (Al ₂ O ₃ , TiO
₂ , a heat sink having a 50 μm-thick diamond film formed on a substrate on which SiO ₂ is dispersed. It is a heat radiating plate for an IC package, a hybrid IC, or the like. There is no mention of the structure for bonding these to the heat sink.

Japanese Utility Model Application Laid-Open No. 3-6862, "Heat dissipation substrate" proposes a substrate having a diamond film formed on the surface of a heat dissipation substrate by patterning and synthesis.

[0014]

SUMMARY OF THE INVENTION In a semiconductor laser having a diamond heat sink, a semiconductor laser element and diamond are joined by a brazing material. At that time, it is necessary to raise the temperature of the diamond and the semiconductor laser until the temperature at which the brazing material can be melted, braze, and then lower the temperature to room temperature. As the temperature rises and falls, a problem of thermal stress occurs.

I, which is a material of a typical semiconductor laser device,
The thermal expansion coefficient of nP or GaAs is two to three times the thermal expansion coefficient of diamond. Since the thermal expansion coefficients are significantly different in this manner, a large thermal stress is generated in the semiconductor laser device when the temperature is reduced from the brazing temperature to room temperature. If this thermal stress is large, cracks occur in the semiconductor laser device. Even without cracking, various problems occur such as a decrease in laser oscillation intensity and a shortened laser life. The thickness of diamond used in conventional heat dissipation components for semiconductor lasers is usually 200 μm or more. When such a thick diamond is used for a heat radiation component, a large thermal stress is generated between the semiconductor laser and the diamond, and the above-mentioned various problems occur due to the thermal stress.

Further, the demand for the price of the semiconductor substrate such as a heat radiating component is becoming stricter. Diamond having high thermal conductivity is excellent in heat dissipation, but is extremely expensive. In order to reduce costs by using expensive materials, it is necessary to reduce the thickness of the diamond to the minimum necessary. A diamond film is synthesized on a substrate by a vapor phase synthesis method, and is obtained as a self-supporting film by removing the substrate. If the diamond layer is too thin,
When removing the substrate, the diamond cracks. In severe cases, problems such as cracking of the diamond occur.

In order to avoid cracks when forming a self-standing film, the diamond film must have a thickness of 200 μm or more. That is, it was necessary to synthesize diamond having a thickness of 200 μm or more on the substrate.
As described above, it is not easy to reduce the price of the heat dissipating component using the self-supporting diamond film.

The present invention has been made in order to solve the above-described problems, and uses a vapor-phase synthetic diamond having a minimum necessary thickness synthesized on a substrate as a heat-radiating component with the substrate attached. Also, by optimizing the thickness of the brazing material between the semiconductor laser element and the heat radiating component, it is possible to reduce the manufacturing cost of the diamond heat radiating component and to provide a semiconductor laser in which the performance is not degraded due to thermal stress. The purpose is to:

[0019]

The semiconductor laser according to the present invention has a thickness of 3 μm to 9 μm formed on a plate-like substrate.
The semiconductor laser element is joined to the heat-dissipating component of vapor-phase synthetic diamond by a brazing material, and the thickness of the brazing material is 2 μm to 8 μm.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION A semiconductor laser device is formed by bonding a semiconductor laser element and a vapor-phase synthetic diamond having a thickness of 3 μm to 9 μm formed on a plate-like base with a brazing material having a thickness of 2 μm to 8 μm. Thermal stress generated in the element can be reduced. Conventional diamond heat sinks were considered to be unsuitable if they did not have a thickness of 200 μm or more, but the present invention argues that such a thickness is unnecessary and that an extremely thin one can be used.

Since the maximum thickness is 9 μm, the conventional 200
The cost can be remarkably reduced as compared with a diamond of μm or more. Instead of simply reducing the cost, the thickness of the diamond film is reduced to prevent the semiconductor laser chip from deteriorating due to thermal stress. The above-mentioned prior art proposes a heat sink having a diamond thickness of 10 μm to 500 μm, which is too thick to cause cracks and cracks in the chip, hinder laser oscillation and deteriorate characteristics.

The diamond layer used in the present invention is produced on a substrate by a gas phase synthesis method. Combustion flame method,
Known methods for producing a vapor phase synthetic diamond, such as a hot filament CVD method and a microwave plasma CVD method, can be used. A diamond synthesized on a substrate by a gas phase synthesis method has a surface having a self-shape peculiar to the diamond, and has a very rough surface and is not suitable for mounting a semiconductor element as it is in many cases. If the surface is rough, brazing of the semiconductor element will not be performed properly, resulting in an increase in thermal resistance. The surface roughness is R
It is preferable that _max is 50 nm or less and Ra is 20 nm or less. This can be achieved by polishing the surface with a diamond grindstone or the like. This surface roughness tends to increase as the synthetic film thickness of diamond increases. However, in the thin film having a diamond film thickness of 3 to 9 μm according to the present invention, the above-described surface roughness can be achieved without any special treatment after the synthesis, and in that case, polishing can be omitted. is there.
Usually, diamond which is vapor-phase synthesized on a substrate such as Si described later becomes a polycrystal. On the other hand, diamond heteroepitaxially grown on a substrate (single crystal) is a single crystal and therefore has very high quality and high thermal conductivity, and is therefore more preferable as a diamond layer used in the present invention. The thickness of the substrate used in the present invention is too large, the thermal resistance of the substrate becomes too large,
Not preferred. However, it is not preferable that the thickness is too small because defects such as cracks are likely to occur from the viewpoint of mechanical strength. 1
It is preferable to use a substrate having a thickness of not less than 00 μm and not more than 1 mm. The material of the base material is stable under the conditions for synthesizing diamond in a gas phase, capable of synthesizing diamond, and has a thermal conductivity not too low;
The condition is that the coefficient of thermal expansion is close to or larger than the semiconductor element to be mounted. Specifically, Si, S
iC, AlN, Cu, Cu-Mo alloy, Cu-W alloy,
A Cu-Mo-W alloy or the like is preferable. The brazing material for joining the diamond surface and the semiconductor element is Au, Ag, Ge,
It is preferable to be made of at least one material selected from In, Pb, Si, and Sn. The metallized layer on the diamond surface is made of Au, Mo, Ni, Pd, P
It is preferable to include at least one or more of t and Ti.

[0023]

【Example】

Example 1 (Hot filament CVD method) Hydrogen gas and methane gas were blown onto a 3-inch Si substrate heated by the hot filament CVD method to synthesize diamond films having a thickness of 3 μm and a thickness of 9 μm. The conditions are as follows. Substrate: Si wafer 76φ × 0.5 mm Filament temperature: 2100 ° C. Substrate temperature: 850 ° C. Hydrogen flow rate: 400 sccm Methane flow rate: 5 sccm Gas pressure: 80 Torr Synthesis time and film thickness: 3 hours 3 μm (after polishing) 8 hours 9 μm (After polishing)

The thermal conductivity of this diamond film is 1000
W / m · K, the surface roughness after polishing was R _max 40 nm, R
_a 10 nm. Without separating the diamond film from the Si substrate, the diamond remaining on the substrate was processed as follows. The diamond-coated Si substrate was cut into a square of 0.75 mm × 0.75 mm by a YAG laser. Ti, Pt,
Metallized by Au. This is to enable brazing. Using a AuSn alloy brazing material on a metallized diamond coated plate, 0.3 mm × 0.3
A semiconductor laser chip made of InGaAsP having a size of 0.1 mm × 0.1 mm was brazed at a temperature of 290 ° C. The thickness of the brazing material was varied to find the optimal conditions.

Thus, a semiconductor laser with a heat sink was manufactured. There are two problems. One is heat dissipation performance. The other is thermal stress generated between the element and the heat sink. If heat radiation is insufficient, laser oscillation becomes unstable. If the thermal stress is large, the semiconductor laser may be distorted and the element may be broken. Thermal stress must be small and heat dissipation must be sufficient.

Therefore, depending on the thickness of the brazing material, 3 μm
Temperature fluctuation and thermal stress of a semiconductor laser are measured by continuously oscillating with an output power of 150 mW for a laser element attached to a heat sink having a diamond film of m thickness and a laser attached to a heat sink having a diamond film of 9 μm thickness. did. Since the output is the same, the amount of heat generated is the same. Heat is removed by heat conduction through the chip, the brazing material, and the heat sink in addition to radiation. Table 1 shows that the diamond film thickness is 3
The measurement results for a heat radiating plate (diamond / Si substrate) of μm are shown.

[0027]

[Table 1]

Sample 1 has the thinnest brazing material (1 μm), but has the largest thermal stress of 95 MPa. When the brazing material is thin, the heat conduction between the chip and the heat radiating plate is good, so that the heat radiating property of the chip is good and the temperature rise can be effectively suppressed. Since the temperature is low, laser oscillation is stable. Sample 2 is 3 μm thicker and thicker. Since the brazing material has a stress relaxing action, the thermal stress of the chip is reduced. However, on the other hand, the temperature of the element rises because heat conduction is reduced.

The thickness of the brazing filler metal increases as in samples 3, 4, and 5. At the same time, the stress applied to the chip decreases.
Since the heat conduction gradually deteriorates, the laser temperature gradually increases. In sample 4, the thickness of the brazing material is 7 μm. Thermal stress is 2
Reduce to 0 MPa. Oscillation is stable in all of Samples 1 to 4.

Since the sample 5 has 9 mm of brazing material, the thermal stress is as small as 10 MPa. Looks good but not so. Instead, the laser temperature rises to 58 ° C. Since the laser temperature is high, the oscillation intensity decreases. When the driving current was increased so that the intensity became constant, the temperature further increased, so that the laser oscillation became unstable. This is because the brazing filler metal is too thick, resulting in poor heat conduction and incomplete heat radiation. Table 2 shows that a heat sink (diamond / Si
This shows the measurement results for the case of the substrate.

[0031]

[Table 2]

Sample 6 has the thinnest brazing material (1 μm). The diamond film has a thickness of 9 μm and is too thick, so that a 1 μm brazing material cannot reduce the thermal stress. The chip was broken in the process of lowering from the brazing temperature to room temperature due to strong thermal stress. Therefore, the energization test could not be performed. In Sample 7, the thermal stress generated by the thick diamond film (9 μm) was relaxed by the brazing material to reduce the thermal stress to 70 MPa. Since the diamond film is three times as large as the previous example (3 μm), it has excellent heat conduction. Temperature can be kept low and stable oscillation occurs.

The thermal stress decreases as the thickness of the brazing material increases in samples 7 to 10. Opposing stresses are canceled by the brazing material having a small Young's modulus. Instead, the heat conduction is reduced by the brazing material, so that the laser temperature increases.
Sample 10 has a thermal stress of 20 MPa. The oscillation is still stable.

Comparative Example 1 In the present invention, the thickness of the diamond film is an important factor. The film thickness was 10 for comparison.
A similar experiment was performed at 0 μm. Hot filament CV
Hydrogen gas on a 2-inch Si substrate heated by the D method,
A 100 μm thick diamond film was synthesized by blowing methane gas. The conditions are as follows. Substrate: Si wafer 50φ × 0.5mm Filament temperature: 2100 ° C. Substrate temperature: 850 ° C. Hydrogen flow rate: 400 sccm Methane flow rate: 10 sccm Gas pressure: 80 Torr Diamond film thickness: 100 μm Synthesis time: 50 hours

The above conditions are almost the same as the conventional example except that the methane flow rate is slightly different and the synthesis time is long. S
Without separating the diamond film from the i-substrate, the diamond-coated Si substrate was 0.75 mm × 0.
It was cut into a 75 mm square shape. The entire surrounding area (surface,
Back, side) were metallized with Ti, Pt and Au. 0.3mm × 0.3mm × 0.1m using AuSn alloy brazing material on metallized diamond coated plate
A semiconductor laser chip composed of m InGaAsP was brazed at a temperature of 290 ° C. For comparison with Example 1, the thickness of the brazing material was variously changed between 1 μm and 9 μm.

When the thickness of the brazing material is 1 μm to 9 μm,
The temperature fluctuation and the thermal stress of the semiconductor laser were measured by continuously oscillating the laser element mounted on the heat sink having a diamond film having a thickness of 0 μm at an output power of 150 mW. Table 3 shows the measurement results.

[0037]

[Table 3]

Since the thickness of the brazing material is in the range of 1 μm to 9 μm, the brazing temperature (2
While the temperature was lowered from 90 ° C.) to room temperature, the device was cracked and damaged. The energization test could not be performed.

Example 2 (Microwave Plasma CVD
Method)] Heated by microwave plasma CVD method
Hydrogen gas, methane gas, and oxygen gas were blown onto the SiC substrate of the square mm to synthesize diamond films of 3 μm thickness and 6 μm thickness. The conditions are as follows. Substrate: SiC plate 20 mm × 20 mm × 0.3 mm Microwave power: 3 kW Substrate temperature: 800 ° C. Hydrogen flow rate: 500 sccm Methane flow rate: 15 sccm Oxygen flow rate: 2 sccm Gas pressure: 90 Torr Synthesis time and film thickness: 3 hours 3 μm 6 hours 6 μm

The thermal conductivity of this diamond film is 1600
W / m · K. It has better thermal conductivity than the diamond film (1000 W / m · K) by the hot filament method. The diamond film is used as a heat sink without being separated from the SiC substrate. 0.75mm ×
It was cut into a 0.75 mm square shape. The entire surface (front surface, back surface, side surfaces) around the periphery was metallized with Ti, Pt, and Au. AuS on metallized diamond coated plate
0.3mm × 0.45mm ×
A semiconductor laser chip made of 0.1 mm InGaAsP was brazed at a temperature of 290 ° C. Such a point is the same as the case of the Si substrate diamond by the hot filament method. As in the previous example, the thickness of the brazing material was varied to find the optimum conditions.

A semiconductor laser with a heat sink was manufactured in the same manner as in the previous example. For these, the thermal stress and the device temperature of the laser chip at a constant optical power were measured. In this embodiment, since the heat radiation property is good, the power of the semiconductor laser
0 mW), that is, 300 mW. Table 4 shows a heat sink (diamond / SiC substrate) with a diamond film thickness of 3 μm.
The measurement results in the case of are shown.

[0042]

[Table 4]

In sample 16, since the brazing material is the thinnest (1 μm), the stress cannot be relaxed and the thermal stress is 95 MPa, which is the largest. When the brazing material is thin, the heat conduction between the chip and the heat radiating plate is good, so that the heat radiating property of the chip is good and the temperature rise can be effectively suppressed. Since the temperature is low, laser oscillation is stable.

The thickness of the brazing filler metal increases from sample 17 to sample 20. Since the brazing material has a stress relaxing action, as the thickness increases, the thermal stress of the chip decreases. On the other hand, the temperature of the element rises because the brazing material hinders heat conduction. In sample 20, the brazing material thickness is 8
μm. The thermal stress is reduced to 15 MPa, and the element temperature rises. Oscillation is stable in all of Samples 16 to 20. Table 5 shows the results of measuring the thermal stress in the case of a heat sink (diamond / SiC substrate) having a diamond film thickness of 6 μm.

[0045]

[Table 5]

Sample 21 has the thinnest brazing material (1 μm).
Since the diamond film is as thick as 6 μm and too thick, thermal stress cannot be reduced with a 1 μm brazing material. Chips cracked in the process of lowering from the brazing temperature to room temperature due to strong thermal stress. Therefore, the energization test could not be performed. In the sample 22, the thermal stress generated by the thick diamond film (6 μm) is reduced by the brazing material to reduce the thermal stress to 65 MPa. Since the diamond film is twice as large as the previous example (3 μm), it has excellent heat conduction. Temperature can be kept low and stable oscillation occurs.

The thermal stress decreases as the thickness of the brazing material increases in Samples 22 to 25. Since the heat conduction is reduced by the brazing material, the laser temperature increases. However, the sample 25 has a thermal stress of 15 MPa. Oscillation is stable in samples 22 to 25. In Table 5, the thermal stress is higher. Since the diamond is thicker, the stress generated between the diamond and the element increases.

Example 3 (Hot filament CVD method + plasma jet CVD method) Next, hot filament CVD
Diamond nuclei were generated on a single-crystal Si substrate by a plasma method, and a diamond / Si radiator coated with a diamond film was produced by a plasma jet method. (First Step: Nucleation) Hydrogen gas and methane gas were blown onto a 2-inch (100) single-crystal Si substrate heated by a hot filament CVD method to perform a nucleation process. The conditions are as follows. Substrate: (100) single crystal Si 50φ × 1 mm Filament temperature: 2000 ° C. Substrate temperature: 700 ° C. Hydrogen flow rate: 400 sccm Methane flow rate: 10 sccm Gas pressure: 30 Torr Substrate bias: −200 V Nuclear generation time: 10 minutes

(Second Step: Diamond Film Coating) An 8 μm-thick diamond film was coated on the (100) single crystal Si substrate on which nuclei were generated by plasma jet CVD. Substrate: nucleated (100) single crystal Si 50φ × 1 mm Substrate temperature: 850 ° C. Hydrogen flow rate: 2 slm (= 2000 sccm) Methane flow rate: 45 sccm Argon flow rate: 5 slm (= 5000 sccm) Gas pressure: 5 Torr Diamond film synthesis Time: 4 hours Diamond film thickness: 8 μm

The thermal conductivity of this diamond film was 2000
W / m · K. Extremely high thermal conductivity. Si
Without separating the diamond film from the substrate, the diamond remaining on the substrate was processed as follows. A diamond-coated Si substrate was 0.75 mm × 1.
It was cut into a 5 mm rectangular shape. The entire surface (front surface, back surface, side surfaces) around the periphery was metallized with Ti, Pt, and Au. 0.3mm × 0.6mm × 0.1m using AuSn alloy brazing material on metallized diamond coated plate
A semiconductor laser chip composed of m InGaAsP was brazed at a temperature of 290 ° C. The thickness of the brazing material was varied to find the optimal conditions. In this example, since the size of the semiconductor laser is large, the heat radiating plate is slightly enlarged.

Thus, a semiconductor laser with a heat sink (Si single crystal + 8 μm diamond film) was manufactured. Because of good heat radiation, the output of the semiconductor laser was set to 500 mW. Laser oscillation was performed under these conditions, and the thermal stress was measured. Table 6 shows the results.

[0052]

[Table 6]

Sample 26 was the thinnest brazing material, and cracks occurred in the semiconductor laser chip while the temperature was lowered from the brazing temperature to room temperature. Laser oscillation was stable in samples 27 to 30 having a brazing material thickness of 3 μm to 8 μm. The diamond thickness is 8 μm and the heat dissipation is better than any of the previous examples. This is the most preferred embodiment.

[0054]

The semiconductor laser according to the present invention uses a heat-dissipating component of vapor-phase synthetic diamond having a thickness of 3 μm to 9 μm synthesized on a plate-like substrate, and the heat-dissipating component and a semiconductor laser chip having a thickness of 2 μm to 8 μm. The semiconductor laser device is not damaged by thermal stress. Enables high power and stable laser oscillation. It is optimal as a high-power semiconductor laser for long-distance trunk transmission.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a structure of a semiconductor laser of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor laser chip 2 Brazing material layer 3 Metallized layer 4 Gas-phase synthetic diamond layer 5 Substrate

Claims (8)

[Claims] 1. A plate-like substrate, a gas-phase synthetic diamond layer having a thickness of 3 μm to 9 μm formed on the surface of the substrate, and a metallization layer provided so as to cover at least a part of the surface of the diamond layer. A semiconductor laser comprising a diamond heat radiating component, comprising: a semiconductor laser chip fixed on a diamond layer and a metallized layer by a brazing material having a thickness of 2 μm to 8 μm. 2. The method according to claim 1, wherein said diamond is from room temperature to room temperature.
Thermal conductivity up to 0 ° C is 500W / m · K to 2000W /
A semiconductor laser comprising the diamond heat radiating component according to claim 1, which has a m · K. 3. A semiconductor laser comprising a diamond heat radiating component according to claim 1, wherein said vapor phase synthetic diamond is a diamond heteroepitaxially grown on a substrate. 4. A semiconductor laser comprising a diamond heat radiating component according to claim 1, wherein the surface roughness of said vapor-phase synthetic diamond is reduced to Rmax 50 nm and Ra 20 nm or less by polishing. 5. The substrate according to claim 1, wherein said base has a thickness of 100 μm to 1000 μm.
A semiconductor laser comprising the diamond heat radiating component according to any one of claims 1 to 4, which is m. 6. The substrate according to claim 1, wherein said substrate is Si, SiC, AlN, Cu,
A semiconductor laser comprising the diamond heat radiating component according to any one of claims 1 to 5, wherein the semiconductor laser is made of one material selected from a Cu-Mo alloy, a Cu-W alloy, and a Cu-Mo-W alloy. 7. The brazing material is made of Au, Ag, Ge, In, P
7. A semiconductor laser comprising the diamond heat radiating component according to claim 1, comprising at least one material selected from the group consisting of b, Si, and Sn. 8. The metallized layer is made of Au, Mo, Ni, P
8. A semiconductor laser comprising the diamond heat radiating component according to claim 1, comprising at least one material selected from d, Pt, and Ti.