JPH1129794A5 - - Google Patents
Info
- Publication number
- JPH1129794A5 JPH1129794A5 JP1997197782A JP19778297A JPH1129794A5 JP H1129794 A5 JPH1129794 A5 JP H1129794A5 JP 1997197782 A JP1997197782 A JP 1997197782A JP 19778297 A JP19778297 A JP 19778297A JP H1129794 A5 JPH1129794 A5 JP H1129794A5
- Authority
- JP
- Japan
- Prior art keywords
- water
- present
- ultrapure water
- electronic materials
- membrane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Description
【０００１】
【発明の属する技術分野】
本発明は、電子材料用洗浄水に関する。さらに詳しくは、本発明は、微粒子により汚染された半導体用シリコン基板、液晶用ガラス基板などの電子材料を、使用する薬剤の量が少なく、超音波を用いて、しかも効率よく高い汚染物除去率で洗浄することができる電子材料用洗浄水に関する。
[0001]
[Technical Field to which the Invention Belongs]
The present invention relates to cleaning water for electronic materials. More specifically, the present invention relates to cleaning water for electronic materials that can clean electronic materials such as silicon substrates for semiconductors and glass substrates for liquid crystal displays that are contaminated with particulates using a small amount of chemicals and ultrasonic waves, and that can efficiently remove contaminants at a high rate.
【０００３】
【発明が解決しようとする課題】
本発明は、微粒子により汚染された半導体用シリコン基板、液晶用ガラス基板などの電子材料を、使用する薬剤の量が少なく、しかも効率よく高い汚染物除去率で洗浄することができる電子材料用洗浄水を提供することを目的としてなされたものである。
[0003]
[Problem to be solved by the invention]
The present invention has been made with an object of providing cleaning water for electronic materials that can clean electronic materials such as semiconductor silicon substrates and liquid crystal glass substrates contaminated with particulates efficiently with a high contaminant removal rate while using a small amount of chemicals.
【０００５】
【発明の実施の形態】
本発明の電子材料用洗浄水は、溶存水素濃度が０.７mg／リットル以上飽和濃度以下であり、pHが６〜１２である超純水からなる洗浄水である。本発明の電子材料用洗浄水により洗浄することができる電子材料としては、例えば、半導体用シリコン基板、液晶用ガラス基板、精密電子部品、これらの製造装置の部品などを挙げることができる。
本発明に用いる超純水の製造方法には特に制限はなく、例えば、脱イオン水、蒸留水などの１次純水を、逆浸透膜、限外ろ過膜、精密ろ過膜などを用いて処理することによって得ることができる。本発明に用いる超純水は、２５℃における電気抵抗率が１８ＭΩ・cm以上であり、有機体炭素が１０μｇ／リットル以下であり、微粒子が１０,０００個／リットル以下であることが好ましい。
図１は、本発明の電子材料用洗浄水の製造工程の一態様の工程系統図である。超純水は、流量計１を経由して脱気膜装置２に送られる。脱気膜装置は、ガス透過膜を介して超純水と接する気相側が真空ポンプ３により減圧状態に保たれ、超純水中に溶存しているガス分が除去される。脱気された超純水は、次いで溶解膜装置４に送られる。溶解膜装置においては、水素供給器５から供給された水素ガスが気相側に送られ、ガス透過膜を介して超純水に供給される。溶存水素濃度が所定の値に達した超純水には、薬液貯槽６から薬注ポンプ７によりアンモニア水などの薬液が供給され、所定のpH値に調整される。水素を溶解し、アルカリ性となった超純水は、最後に精密ろ過装置８に送られ、ＭＦフィルターなどにより微粒子を除去して本発明の電子材料用洗浄水が得られる。
[0005]
[Embodiments of the Invention]
The cleaning water for electronic materials of the present invention is ultrapure water having a dissolved hydrogen concentration of 0.7 mg/L or more and a saturated concentration or less, and a pH of 6 to 12. Examples of electronic materials that can be cleaned with the cleaning water for electronic materials of the present invention include silicon substrates for semiconductors, glass substrates for liquid crystal displays, precision electronic components, and parts of the manufacturing equipment for these components.
There are no particular limitations on the method for producing the ultrapure water used in the present invention, and it can be obtained, for example, by treating primary pure water such as deionized water or distilled water with a reverse osmosis membrane, an ultrafiltration membrane, a microfiltration membrane, etc. The ultrapure water used in the present invention preferably has an electrical resistivity at 25°C of 18 MΩ cm or more, an organic carbon content of 10 μg/L or less, and a particulate content of 10,000 particles/L or less.
FIG. 1 is a flow diagram of one embodiment of the manufacturing process for electronic material cleaning water of the present invention. Ultrapure water is sent to a degassing membrane device 2 via a flowmeter 1. The gas phase side of the degassing membrane device, which contacts the ultrapure water via a gas-permeable membrane, is maintained at a reduced pressure by a vacuum pump 3, and dissolved gases in the ultrapure water are removed. The degassed ultrapure water is then sent to a dissolution membrane device 4. In the dissolution membrane device, hydrogen gas supplied from a hydrogen supply device 5 is sent to the gas phase side and supplied to the ultrapure water via the gas-permeable membrane. Once the dissolved hydrogen concentration has reached a predetermined value, a chemical solution such as ammonia water is supplied from a chemical storage tank 6 via a chemical injection pump 7 to adjust the pH to a predetermined value. The ultrapure water, which has become alkaline due to the dissolved hydrogen, is finally sent to a microfiltration device 8, where particulates are removed using an MF filter or the like, to obtain the electronic material cleaning water of the present invention.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19778297A JP3940967B2 (en) | 1997-07-08 | 1997-07-08 | Method for producing cleaning water for electronic material and method for cleaning electronic material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19778297A JP3940967B2 (en) | 1997-07-08 | 1997-07-08 | Method for producing cleaning water for electronic material and method for cleaning electronic material |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH1129794A JPH1129794A (en) | 1999-02-02 |
| JPH1129794A5 true JPH1129794A5 (en) | 2005-04-07 |
| JP3940967B2 JP3940967B2 (en) | 2007-07-04 |
Family
ID=16380269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19778297A Expired - Fee Related JP3940967B2 (en) | 1997-07-08 | 1997-07-08 | Method for producing cleaning water for electronic material and method for cleaning electronic material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3940967B2 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4506909B2 (en) * | 1999-02-17 | 2010-07-21 | 栗田工業株式会社 | Planarization processing method of silicon substrate surface oxide film |
| TW464970B (en) | 1999-04-21 | 2001-11-21 | Sharp Kk | Ultrasonic cleaning device and resist-stripping device |
| JP4484980B2 (en) | 1999-05-20 | 2010-06-16 | 株式会社ルネサステクノロジ | Photomask cleaning method, cleaning apparatus, and photomask cleaning liquid |
| JP4683314B2 (en) * | 2000-08-01 | 2011-05-18 | 栗田工業株式会社 | Cleaning method for silicon substrate for semiconductor |
| CN1444259A (en) | 2002-03-12 | 2003-09-24 | 株式会社东芝 | Method for mfg. semiconductor device |
| JP4967001B2 (en) * | 2009-03-13 | 2012-07-04 | ミズ株式会社 | Method for producing hydrogen-containing biological fluid and apparatus therefor |
| KR101255895B1 (en) * | 2009-12-10 | 2013-04-17 | 가부시키가이샤 코아테크노로지 | Method for manufacturing nano-bubble water containing saturated gas |
| JP5353730B2 (en) * | 2010-01-25 | 2013-11-27 | 信越半導体株式会社 | Ultrasonic cleaning method, ultrasonic cleaning apparatus, and method for producing propagation water used for ultrasonic cleaning |
| JP5266267B2 (en) * | 2010-02-26 | 2013-08-21 | ミズ株式会社 | Method and apparatus for producing hydrogen-containing biological fluid |
| JP6154860B2 (en) * | 2015-07-17 | 2017-06-28 | 野村マイクロ・サイエンス株式会社 | Method and apparatus for producing hydrogen water for cleaning |
-
1997
- 1997-07-08 JP JP19778297A patent/JP3940967B2/en not_active Expired - Fee Related
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