JPH11312704A5 - - Google Patents
Info
- Publication number
- JPH11312704A5 JPH11312704A5 JP1998365074A JP36507498A JPH11312704A5 JP H11312704 A5 JPH11312704 A5 JP H11312704A5 JP 1998365074 A JP1998365074 A JP 1998365074A JP 36507498 A JP36507498 A JP 36507498A JP H11312704 A5 JPH11312704 A5 JP H11312704A5
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- metallization
- alloys
- tungsten
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Description
第二の異方性のエッチングの完結後及びボンドパッド溝２１８の最終形成が完結すると、上に置かれた金属被覆層は、任意の適当な金属被覆技術によって金属を付着させることによって直ちに形成される。金属被覆技術は、従来技術で十分に知られており、かつ例えば VLSI technology、第２版、S. M. Sze １９８８年、McGraw-Hill Publishing Company に記載されている。金属被覆層を形成するのに適する金属及び合金は、例えばアルミニウム、銅、ニッケル、モリブデン、タングステン、白金、二珪化タンタル、二珪化チタン並びに前記金属の他の合金である。アルミニウム、アルミニウム合金、例えば珪化アルミニウム、銅及びタングステンは、しばしば、相互接続金属被覆のために選択される材料である。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/997,682 US6033984A (en) | 1997-12-23 | 1997-12-23 | Dual damascene with bond pads |
| US08/997682 | 1997-12-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11312704A JPH11312704A (ja) | 1999-11-09 |
| JPH11312704A5 true JPH11312704A5 (ja) | 2006-02-02 |
Family
ID=25544264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10365074A Pending JPH11312704A (ja) | 1997-12-23 | 1998-12-22 | ボンドパッドを有するデュアルダマスク |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6033984A (ja) |
| EP (1) | EP0926721A3 (ja) |
| JP (1) | JPH11312704A (ja) |
| KR (1) | KR19990063359A (ja) |
| TW (1) | TW436930B (ja) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4651815B2 (ja) * | 1998-01-23 | 2011-03-16 | ローム株式会社 | ダマシン配線および半導体装置 |
| US6090696A (en) * | 1999-10-20 | 2000-07-18 | Taiwan Semicondutor Manufacturing Company | Method to improve the adhesion of a molding compound to a semiconductor chip comprised with copper damascene structures |
| US6191023B1 (en) * | 1999-11-18 | 2001-02-20 | Taiwan Semiconductor Manufacturing Company | Method of improving copper pad adhesion |
| US6417087B1 (en) * | 1999-12-16 | 2002-07-09 | Agere Systems Guardian Corp. | Process for forming a dual damascene bond pad structure over active circuitry |
| US6838769B1 (en) | 1999-12-16 | 2005-01-04 | Agere Systems Inc. | Dual damascene bond pad structure for lowering stress and allowing circuitry under pads |
| GB2364170B (en) * | 1999-12-16 | 2002-06-12 | Lucent Technologies Inc | Dual damascene bond pad structure for lowering stress and allowing circuitry under pads and a process to form the same |
| US6551856B1 (en) * | 2000-08-11 | 2003-04-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming copper pad redistribution and device formed |
| US6960496B2 (en) * | 2003-04-03 | 2005-11-01 | Taiwan Semiconductor Manufacturing | Method of damascene process flow |
| US20060071304A1 (en) * | 2004-09-29 | 2006-04-06 | International Business Machines Corporation | Structure and layout of a fet prime cell |
| US20060211167A1 (en) * | 2005-03-18 | 2006-09-21 | International Business Machines Corporation | Methods and systems for improving microelectronic i/o current capabilities |
| US7425507B2 (en) * | 2005-06-28 | 2008-09-16 | Micron Technology, Inc. | Semiconductor substrates including vias of nonuniform cross section, methods of forming and associated structures |
| US20110156260A1 (en) * | 2009-12-28 | 2011-06-30 | Yu-Hua Huang | Pad structure and integrated circuit chip with such pad structure |
| US20120273937A1 (en) * | 2011-04-30 | 2012-11-01 | Stats Chippac, Ltd. | Semiconductor Device and Method of Forming Bump Interconnect Structure with Conductive Layer Over Buffer Layer |
| US8575022B2 (en) * | 2011-11-28 | 2013-11-05 | International Business Machines Corporation | Top corner rounding of damascene wire for insulator crack suppression |
| US20250062124A1 (en) * | 2023-08-18 | 2025-02-20 | Tokyo Electron Limited | Methods and structures for improving etch profile of underlying layers |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2428373C2 (de) * | 1974-06-12 | 1982-05-27 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von weichlötbaren Anschlußkontakten auf einer Halbleiteranordnung |
| JPS5561027A (en) * | 1978-10-30 | 1980-05-08 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Gas plasma etching |
| US5266446A (en) * | 1990-11-15 | 1993-11-30 | International Business Machines Corporation | Method of making a multilayer thin film structure |
| US5618381A (en) * | 1992-01-24 | 1997-04-08 | Micron Technology, Inc. | Multiple step method of chemical-mechanical polishing which minimizes dishing |
| US5773363A (en) * | 1994-11-08 | 1998-06-30 | Micron Technology, Inc. | Semiconductor processing method of making electrical contact to a node |
| US5516710A (en) * | 1994-11-10 | 1996-05-14 | Northern Telecom Limited | Method of forming a transistor |
| US5534462A (en) * | 1995-02-24 | 1996-07-09 | Motorola, Inc. | Method for forming a plug and semiconductor device having the same |
| US5739563A (en) * | 1995-03-15 | 1998-04-14 | Kabushiki Kaisha Toshiba | Ferroelectric type semiconductor device having a barium titanate type dielectric film and method for manufacturing the same |
| JP2728025B2 (ja) * | 1995-04-13 | 1998-03-18 | 日本電気株式会社 | 半導体装置の製造方法 |
| US5534460A (en) * | 1995-04-27 | 1996-07-09 | Vanguard International Semiconductor Corp. | Optimized contact plug process |
| US5780337A (en) * | 1996-09-23 | 1998-07-14 | United Microelectronics Corporation | Method of fabricating a bit line of a dynamic random access memory |
| US5877076A (en) * | 1997-10-14 | 1999-03-02 | Industrial Technology Research Institute | Opposed two-layered photoresist process for dual damascene patterning |
-
1997
- 1997-12-23 US US08/997,682 patent/US6033984A/en not_active Expired - Lifetime
-
1998
- 1998-10-29 EP EP98120465A patent/EP0926721A3/en not_active Withdrawn
- 1998-11-09 TW TW087118611A patent/TW436930B/zh not_active IP Right Cessation
- 1998-12-22 JP JP10365074A patent/JPH11312704A/ja active Pending
- 1998-12-23 KR KR1019980057481A patent/KR19990063359A/ko not_active Ceased
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