JPH11321094A - Phase change optical recording medium - Google Patents
Phase change optical recording mediumInfo
- Publication number
- JPH11321094A JPH11321094A JP10130029A JP13002998A JPH11321094A JP H11321094 A JPH11321094 A JP H11321094A JP 10130029 A JP10130029 A JP 10130029A JP 13002998 A JP13002998 A JP 13002998A JP H11321094 A JPH11321094 A JP H11321094A
- Authority
- JP
- Japan
- Prior art keywords
- recording
- composition
- recording layer
- phase
- medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Optical Record Carriers And Manufacture Thereof (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
Abstract
(57)【要約】
【課題】 CAV方式等のように媒体の部位により異な
る記録線速で記録を行うランダムアクセス性に優れたタ
イプの相変化光記録媒体に関して、その高記録密度での
繰返し記録特性を向上させる記録層の組成等を明らかに
する。
【解決手段】 記録線速が媒体半径方向の位置により異
なる相変化光記録媒体1に関し、記録層4は、Sb及び
Teを必須元素としてIb族元素、Vb族元素及びVIb
族元素を有する相変化記録材料による。また、記録層4
が少なくとも1つの準安定結晶相を含み空間群Fm3m
に属する単数又は複数の結晶相を有する結晶化状態とア
モルファス化状態との間の相転移における光学的性質の
変化を示す。さらに、記録層4の原子比率での組成を
(Ib)a(Vb)x(VIb)1-a-x で表す組成式においてVb
族元素の組成を表すxが0.72≦x+2a≦0.80
の範囲内に設定され、かつ、記録線速の変化に対応して
記録層4の組成に媒体半径方向で差異を有する。
PROBLEM TO BE SOLVED: To repeatedly record at a high recording density with respect to a phase change optical recording medium of a type excellent in random access, such as a CAV method, which performs recording at a different recording linear velocity depending on a part of the medium. Clarify the composition of the recording layer for improving the characteristics. SOLUTION: Regarding a phase change optical recording medium 1 whose recording linear velocity differs depending on a position in a radial direction of the medium, a recording layer 4 comprises Sb and Te as essential elements, a group Ib element, a group Vb element and a group VIb.
It is based on a phase change recording material having a group III element. The recording layer 4
Contains at least one metastable crystal phase and the space group Fm3m
2 shows a change in optical properties in a phase transition between a crystallized state having one or a plurality of crystalline phases and an amorphous state. Further, the composition in the atomic ratio of the recording layer 4 is
(Ib) a (Vb) x (VIb) In the composition formula represented by 1-ax , Vb
X representing the composition of group element is 0.72 ≦ x + 2a ≦ 0.80
And there is a difference in the composition of the recording layer 4 in the medium radial direction in accordance with the change in the recording linear velocity.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、光ビームを照射す
ることにより記録層材料に光学的な変化を生じさせるこ
とにより、情報の記録・再生を行う書換え可能な相変化
光記録媒体に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a rewritable phase-change optical recording medium for recording and reproducing information by irradiating a light beam with an optical change in a recording layer material.
【0002】[0002]
【従来の技術】レーザビーム照射による情報の記録、再
生及び消去可能な光記録媒体の一つとして、結晶‐非結
晶相間、或いは、結晶‐結晶相間の転移を利用する、い
わゆる相変化光記録媒体がよく知られている。これは、
単一ビームによるオーバライトが可能であり、ドライブ
側の光学系もより単純で済むため、コンピュータ関連や
映像・音響に関する記録媒体として応用されている。2. Description of the Related Art As one of optical recording media capable of recording, reproducing and erasing information by irradiating a laser beam, a so-called phase-change optical recording medium utilizing a transition between a crystal and an amorphous phase or between a crystal and a crystal phase. Is well known. this is,
Since overwriting with a single beam is possible and the optical system on the drive side is simpler, it is applied as a computer-related or recording medium for video / audio.
【0003】その記録材料の一つとして、(SbxTe
1-x)My なる組成式で表されるものが、例えば特開平1
−277338号公報に開示されている。ここで、
“M”はAg,Al,As,Au,Bi,Cu,Ga,
Ge,In,Pb,Pt,Se,Si,Sn及びZn中
から選択された少なくとも1種の元素であり、組成範囲
は0.4≦x<0.7、かつ、y≦0.2に設定されて
いる。しかし、このような構造の記録層の場合、好まし
い記録特性が得られるのは0.4≦x<0.7であり、
x≧0.7の範囲では繰返し記録における消去特性に問
題を生じていた。As one of the recording materials, (Sb x Te
1-x) those represented by M y a composition formula, for example, JP-A-1
-277338. here,
“M” is Ag, Al, As, Au, Bi, Cu, Ga,
It is at least one element selected from Ge, In, Pb, Pt, Se, Si, Sn and Zn, and the composition range is set to 0.4 ≦ x <0.7 and y ≦ 0.2. Have been. However, in the case of the recording layer having such a structure, it is 0.4 ≦ x <0.7 that preferable recording characteristics are obtained.
In the range of x ≧ 0.7, there was a problem in the erasing characteristics in repeated recording.
【0004】また、類似の材料系で、(SbxTe1-x)a
M1-aなる組成式(MはAu,Ag又はCuの内の少な
くとも1つの元素)で表される相変化記録材料が、例え
ば特開平9−71049号公報に開示されている。この
組成範囲は0<x<0.9、かつ、0<a<1であり、
その構造はSb2Te3+Sbである。このSb2Te3+
Sb擬2元素の共晶組成近傍では、SbとSb2Te3と
では結晶化速度に差異があり、アモルファス化部と結晶
化部との境界が、SbとSb2Te3との粒界の影響で乱
れを生じすい。このため、CD‐RW(Compact Disk
‐Rewritable)等の比較的記録密度の低い媒体への適
用は可能であるが、記録密度がCD‐RWの約4倍であ
るDVD(Digital Versatile Disk)‐RAM或い
はDVD‐ROMと同等以上の高記録密度媒体では、良
好なる記録特性を得ることが困難である。In a similar material system, (Sb x Te 1-x ) a
A phase change recording material represented by a composition formula of M 1-a (M is at least one element of Au, Ag or Cu) is disclosed in, for example, JP-A-9-71049. This composition range is 0 <x <0.9 and 0 <a <1;
Its structure is Sb 2 Te 3 + Sb. This Sb 2 Te 3 +
The eutectic composition near the Sb pseudo two elements, in an Sb and Sb 2 Te 3 there is a difference in the crystallization rate, the boundary between the amorphous portion and the crystallized portion, the grain boundary between Sb and Sb 2 Te 3 Disturbance caused by influence. For this reason, CD-RW (Compactact Disk)
-It can be applied to a medium with a relatively low recording density such as Rewritable, but the recording density is about four times as high as that of a CD-RW, and is at least as high as a DVD (Digital Versatile Disk) -RAM or DVD-ROM. With a recording density medium, it is difficult to obtain good recording characteristics.
【0005】[0005]
【発明が解決しようとする課題】即ち、Sb‐Te‐M
系では、Sb2Te3,Sb2Te3+Sbなる構造をベー
スとして、Ag,Al,As,Au,Bi,Cu,G
a,Ge,In,Pb,Pt,Se,Si,Sn及びZ
nの何れかの元素を添加元素として、非晶質状態の安定
性や高速消去性、或いは、繰返し記録特性が改善された
記録材料が使用されているのみである。このように、S
b‐Te‐M系の記録材料で、空間群Fm3mに属する
単数又は複数の準安定結晶相を有する記録媒体に関する
知見は従来全く見当らない。さらに、この準安定結晶相
が存在可能であり、繰返し記録時の熱衝撃に対して耐久
性を有する組成領域を明確にした従来技術も見当らな
い。That is, Sb-Te-M
In the system, based on the structure of Sb 2 Te 3 , Sb 2 Te 3 + Sb, Ag, Al, As, Au, Bi, Cu, G
a, Ge, In, Pb, Pt, Se, Si, Sn and Z
Only a recording material in which the stability of the amorphous state, the high-speed erasing property, or the repetitive recording characteristic is improved using any one of n as an additive element. Thus, S
Heretofore, there is no knowledge about a b-Te-M recording material having a single or a plurality of metastable crystal phases belonging to the space group Fm3m. Furthermore, there is no prior art in which a metastable crystal phase can exist and a composition region having a durability against thermal shock during repeated recording is defined.
【0006】このため、準安定結晶相を有する記録層の
組成と繰返し記録特性との関係、或いは、組成と結晶構
造との関係、さらには、結晶構造と繰返し記録特性との
関係が明らかではなく、高記録密度、例えばDVD‐R
AMやDVD‐ROMと同等の記録密度を有し、良好な
る記録特性を有する相変化光記録媒体は無い状況にあ
る。また、繰返し記録特性が良好な組成範囲と記録線速
との関係も明確ではない状況にある。Therefore, the relationship between the composition of the recording layer having a metastable crystal phase and the repetitive recording characteristics, the relationship between the composition and the crystal structure, and the relationship between the crystal structure and the repetitive recording characteristics are not clear. , High recording density, eg DVD-R
There is no phase-change optical recording medium having a recording density equivalent to that of an AM or DVD-ROM and having good recording characteristics. In addition, the relationship between the composition range with good repetitive recording characteristics and the recording linear velocity is not clear.
【0007】加えて、繰返し記録の良好性が維持された
状態で、結晶化速度を制御するための組成に関する知見
も従来は全くなく、CAV(Constant Anguler Velo
city)記録や、MCAV(Modify CAV)記録などの
ように、記録線速が場所により変化する相変化光記録媒
体において、高記録密度で全面に渡って繰返し記録特性
が良好なものは無い状況にある。[0007] In addition, there has been no knowledge about the composition for controlling the crystallization rate while maintaining good repetitive recording, and CAV (Constant Angular Velocity) has not been known.
As in the case of phase change optical recording media where the recording linear velocity changes depending on the location, such as city) recording and MCAV (Modify CAV) recording, there are no recording media with high recording density and good repetitive recording characteristics over the entire surface. is there.
【0008】そこで、本発明は、CAV方式或いはMC
AV方式により媒体の部位によって異なる記録線速で記
録・再生を行うランダムアクセス性に優れたタイプの相
変化光記録媒体に関して、幅広い記録線速領域における
記録密度、繰返し記録特性に優れた記録層の組成等を明
確にした相変化光記録媒体を提供することを目的とす
る。Accordingly, the present invention provides a CAV system or MC
For a phase change optical recording medium of the type excellent in random access that performs recording / reproduction at different recording linear velocities depending on the part of the medium by the AV system, a recording layer having an excellent recording density and a repetitive recording characteristic in a wide recording linear velocity region. An object of the present invention is to provide a phase-change optical recording medium having a clarified composition and the like.
【0009】[0009]
【課題を解決するための手段】請求項1記載の発明は、
記録線速が媒体半径方向の位置により異なる相変化光記
録媒体において、Sb及びTeを必須元素としてIb族
元素、Vb族元素及びVIb族元素を有する相変化記録材
料を記録層とし、前記記録層が少なくとも1つの準安定
結晶相を含み空間群Fm3mに属する単数又は複数の結
晶相を有する結晶化状態とアモルファス化状態との間の
相転移における光学的性質の変化を示し、前記記録層の
原子比率での組成を(Ib)a(Vb)x(VIb)1-a-x で表す
組成式においてVb族元素の組成を表すxが0.72≦
x+2a≦0.80の範囲内に設定されて、前記記録線
速の変化に対応して前記記録層の組成に媒体半径方向で
差異を有する。According to the first aspect of the present invention,
In a phase change optical recording medium in which a recording linear velocity varies depending on a position in a radial direction of the medium, a phase change recording material having a group Ib element, a group Vb element, and a group VIb element with Sb and Te as essential elements is used as a recording layer. Shows a change in optical properties in a phase transition between a crystallized state and an amorphous state having at least one metastable crystal phase and one or more crystal phases belonging to the space group Fm3m, In the composition formula in which the composition at the ratio is represented by (Ib) a (Vb) x (VIb) 1-ax , x representing the composition of the Vb group element is 0.72 ≦
It is set in the range of x + 2a ≦ 0.80, and there is a difference in the composition of the recording layer in the medium radial direction in accordance with the change in the recording linear velocity.
【0010】請求項2記載の発明は、請求項1記載の相
変化光記録媒体において、結晶化状態の前記記録層中の
結晶相が準安定固溶体単相である。According to a second aspect of the present invention, in the phase-change optical recording medium according to the first aspect, the crystalline phase in the crystallized recording layer is a metastable solid solution single phase.
【0011】請求項3記載の発明は、請求項1又は2記
載の相変化光記録媒体において、前記記録層が少なくと
もAgとAuとの一方の元素を有し、その元素濃度が内
周部側に対して外周部側の方が小さく設定されている。According to a third aspect of the present invention, in the phase change optical recording medium according to the first or second aspect, the recording layer has at least one element of Ag and Au, and the element concentration of the recording layer is closer to the inner peripheral side. Is set smaller on the outer peripheral side.
【0012】請求項4記載の発明は、請求項3記載の相
変化光記録媒体において、前記記録層の原子比率での組
成が(Ag,Au)a(Vb)x(VIb)1-a-x なる組成式で表
され、記録線速1〜2m/sに対応する媒体半径方向の
部位に属する前記記録層の組成として0.05≦a≦
0.08の範囲内に設定されている。According to a fourth aspect of the present invention, in the phase change optical recording medium of the third aspect, the composition of the recording layer in the atomic ratio is (Ag, Au) a (Vb) x (VIb) 1-ax . 0.05 ≦ a ≦
It is set within the range of 0.08.
【0013】請求項5記載の発明は、請求項3記載の相
変化光記録媒体において、前記記録層の原子比率での組
成が(Ag,Au)a(Vb)x(VIb)1-a-x なる組成式で表
され、記録線速2〜3m/sに対応する媒体半径方向の
部位に属する前記記録層の組成として0.03≦a≦
0.07の範囲内に設定されている。According to a fifth aspect of the present invention, in the phase change optical recording medium according to the third aspect, the composition of the recording layer in the atomic ratio is (Ag, Au) a (Vb) x (VIb) 1-ax . The composition of the recording layer, which is represented by a composition formula and belongs to a portion in the medium radial direction corresponding to a recording linear velocity of 2 to 3 m / s, is 0.03 ≦ a ≦
It is set within the range of 0.07.
【0014】請求項6記載の発明は、請求項3記載の相
変化光記録媒体において、前記記録層の原子比率での組
成が(Ag,Au)a(Vb)x(VIb)1-a-x なる組成式で表
され、記録線速3〜4m/sに対応する媒体半径方向の
部位に属する前記記録層の組成として0.02≦a≦
0.06の範囲内に設定されている。According to a sixth aspect of the present invention, in the phase change optical recording medium of the third aspect, the composition of the recording layer in the atomic ratio is (Ag, Au) a (Vb) x (VIb) 1-ax . The composition of the recording layer, which is represented by a composition formula and belongs to a portion in the medium radial direction corresponding to a recording linear velocity of 3 to 4 m / s, is 0.02 ≦ a ≦
It is set within the range of 0.06.
【0015】請求項7記載の発明は、請求項3記載の相
変化光記録媒体において、前記記録層の原子比率での組
成が(Ag,Au)a(Vb)x(VIb)1-a-x なる組成式で表
され、記録線速4〜6m/sに対応する媒体半径方向の
部位に属する前記記録層の組成として0.01≦a≦
0.05の範囲内に設定されている。According to a seventh aspect of the present invention, in the phase change optical recording medium according to the third aspect, the composition of the recording layer in the atomic ratio is (Ag, Au) a (Vb) x (VIb) 1-ax . The composition of the recording layer, which is represented by a composition formula and belongs to a portion in the medium radial direction corresponding to a recording linear velocity of 4 to 6 m / s, is 0.01 ≦ a ≦
It is set within the range of 0.05.
【0016】請求項8記載の発明は、請求項3記載の相
変化光記録媒体において、前記記録層の原子比率での組
成が(Ag,Au)a(Vb)x(VIb)1-a-x なる組成式で表
され、記録線速6〜8m/sに対応する媒体半径方向の
部位に属する前記記録層の組成として0.005≦a≦
0.04の範囲内に設定されている。According to an eighth aspect of the present invention, in the phase change optical recording medium according to the third aspect, the composition of the recording layer in the atomic ratio is (Ag, Au) a (Vb) x (VIb) 1-ax . The composition of the recording layer, which is represented by a composition formula and belongs to a portion in the medium radial direction corresponding to a recording linear velocity of 6 to 8 m / s, is 0.005 ≦ a ≦
It is set within the range of 0.04.
【0017】まず、請求項1記載の発明の相変化光記録
媒体における記録層は、その相変化記録材料として、S
b及びTeを必須元素として、Ib族元素、Vb族元素
及びVIb族元素を有する。特に、Ib族元素としてはA
g,Cu及び/又はAu、Vb族元素としてはSb,A
s及び/又はBi、VIb族元素としてはTe,S及び/
又はSe系の記録材料であって、記録層が少なくとも準
安定結晶相を含む単数又は複数の結晶相と準安定アモル
ファス相との間の相転移において光学的性質が変化する
特性を有するものである。その組成は、Sb及びTeを
必須元素として、記録層の原子比率での組成を(Ib)
a(Vb)x(VIb)1-a-x で表す組成式においてVb族元素
の組成を表すxが0.72≦x+2a≦0.80の範囲
内に設定されている。同時に、このような記録層中の結
晶相は空間群Fm3mに属している。このような準安定
結晶相は、Sb又はTeを必須元素として、Ib‐Vb
‐VIb固溶体、Vb‐VIb固溶体、(Vb)3(VIb)結晶
相の中の少なくとも1つである。このような準安定結晶
相の具体的な材料としては、例えば、Ag‐Sb‐Te
系においては、Ag‐Sb‐Te固溶体、Sb‐Te固
溶体、Sb3Te の中の少なくとも1つである。これら
の準安定結晶相は、空間群Fm3mに属しており、格子
定数が0.615±0.02nmの結晶相、或いは、こ
の空間群Fm3mの結晶中の元素が規則化した長周期の
結晶相の何れかである。これらの準安定結晶相が存在す
る領域は、上記組成式によれば、4a<1なる条件が成
立する領域である。First, the recording layer in the phase-change optical recording medium according to the first aspect of the present invention comprises S
With b and Te as essential elements, it has a group Ib element, a group Vb element and a group VIb element. In particular, as the group Ib element, A
g, Cu and / or Au, Vb group elements as Sb, A
Te, S and / or Bi and / or Bi and VIb group elements
Or a Se-based recording material, wherein the recording layer has a property that optical properties change in a phase transition between one or more crystalline phases including at least a metastable crystalline phase and a metastable amorphous phase. . The composition is such that Sb and Te are essential elements and the composition in the atomic ratio of the recording layer is (Ib)
In the composition formula represented by a (Vb) x (VIb) 1-ax , x representing the composition of the Vb group element is set in the range of 0.72 ≦ x + 2a ≦ 0.80. At the same time, the crystal phase in such a recording layer belongs to the space group Fm3m. Such a metastable crystal phase contains Sb or Te as an essential element and contains Ib-Vb
At least one of -VIb solid solution, Vb-VIb solid solution, and (Vb) 3 (VIb) crystal phase. As a specific material of such a metastable crystal phase, for example, Ag-Sb-Te
In a system, Ag-Sb-Te solid solution, Sb-Te solid solution, at least one of Sb 3 Te. These metastable crystal phases belong to the space group Fm3m, and have a lattice constant of 0.615 ± 0.02 nm or a long-period crystal phase in which the elements in the crystals of the space group Fm3m are ordered. One of According to the above composition formula, the region where these metastable crystal phases exist is a region where the condition of 4a <1 is satisfied.
【0018】ここに、記録層の結晶化部が単相の準安定
結晶相で構成されたものは、請求項2記載の発明のもの
であって、Ib‐Vb‐VIb固溶体である。これは、例
えば、Ag‐Se‐Te,Au‐Sb‐Te,Au‐A
g‐Sb‐Bi‐Te‐Se,(Au,Ag,Cu)‐
(Sb,Bi,As)‐(Te,Se,S)である。Here, the one in which the crystallized portion of the recording layer is composed of a single metastable crystal phase is the invention according to claim 2, which is an Ib-Vb-VIb solid solution. This includes, for example, Ag-Se-Te, Au-Sb-Te, Au-A
g-Sb-Bi-Te-Se, (Au, Ag, Cu)-
(Sb, Bi, As)-(Te, Se, S).
【0019】これ以外に、上記の準安定結晶相の任意の
組合せで、準安定相のみからなる複数の結晶相からなる
混相状態でもよい。また、これらの準安定相と格子整合
関係にあるその他の安定結晶相、例えば、AgSbTe
2 等の結晶相が含まれる混相状態でもよい。In addition, any combination of the above metastable crystal phases may be in a mixed phase state composed of a plurality of crystal phases consisting only of the metastable phase. Further, other stable crystal phases having a lattice matching relationship with these metastable phases, for example, AgSbTe
It may be in a mixed phase state containing a crystal phase such as 2 .
【0020】何れの場合も、格子定数0.615nm近
傍の面心立方格子を基本とする結晶構造である。良好な
マーク形状を得る上では、請求項2記載の発明のよう
に、記録層の結晶化部が、単相の準安定Ib‐Vb‐VI
b固溶体のみからなることが好ましい。初期結晶化時の
過大な熱衝撃が避けられず、やむを得ず分相の結晶相を
生成する場合でも、上述したように互いに格子整合関係
にある空間群Fm3mに属する結晶相を主として生成
し、空間群Fm3mの結晶相と互いに格子整合関係にな
いその他の析出物、例えば、Sb,Sb2Te3、或い
は、結晶化部内のアモルファス相等は可能な限り出現せ
ず、準安定相を含む空間群Fm3mに属する結晶相生成
に適した初期結晶化過程が採用される。なお、本発明に
は、膜厚方向や面内方向に組成の勾配があってもよく、
上記の相の積層膜も含まれる。Each case has a crystal structure based on a face-centered cubic lattice having a lattice constant of about 0.615 nm. In order to obtain a good mark shape, the crystallized portion of the recording layer is formed of a single-phase metastable Ib-Vb-VI.
b It is preferable that the solid solution is composed of only a solid solution. Even when an excessive thermal shock at the time of initial crystallization is unavoidable and a unavoidable generation of a phase-separated crystal phase occurs, mainly a crystal phase belonging to the space group Fm3m having a lattice matching relationship with each other is generated as described above, and the space group is generated. Other precipitates that do not have a lattice matching relationship with the crystal phase of Fm3m, for example, Sb, Sb 2 Te 3 , or an amorphous phase in the crystallized portion do not appear as much as possible, and are in the space group Fm3m including the metastable phase. An initial crystallization process suitable for the formation of the belonging crystal phase is employed. In the present invention, there may be a composition gradient in a film thickness direction or an in-plane direction,
Also included are laminated films of the above phases.
【0021】もっとも、請求項1記載の発明では、その
特徴の1つとして、記録層の相変化記録材料に関して、
所定の記録線速に応じた結晶化速度を得るため、記録層
の組成に面内分布を生じさせている。例えば、この記録
層の結晶化速度は、Ib族元素及び/又はVIb族元素が
増えるほど遅くなり、Vb族元素が増えるほど速くなる
傾向にある。According to the first aspect of the present invention, one of the features is that the phase change recording material of the recording layer is
In order to obtain a crystallization speed corresponding to a predetermined recording linear velocity, an in-plane distribution is generated in the composition of the recording layer. For example, the crystallization speed of the recording layer tends to decrease as the group Ib element and / or group VIb element increases, and increase as the group Vb element increases.
【0022】特に、Ag及び/又はAuを含む(Ag,
Au)‐(Vb)‐(VIb)記録材料系では、Ag及び/又
はAuの濃度依存性が顕著であり、記録線速の高い領域
のAg及び/又はAuの濃度を低くする。即ち、請求項
3記載の発明のように、記録層の外周部側のAg及び/
又はAu濃度を内周部側のAg及び/又はAu濃度に比
較して小さくすれば、内周部分の記録線速が遅いCAV
記録などに対応することができる。この場合、組成は、
全面にわたる良好な繰返し記録特性を維持するため、
0.72≦x+2a≦0.80が成立する範囲に設定さ
れる。In particular, it contains Ag and / or Au (Ag,
In the (Au)-(Vb)-(VIb) recording material system, the concentration dependency of Ag and / or Au is remarkable, and the concentration of Ag and / or Au in the region where the recording linear velocity is high is lowered. That is, as in the invention according to claim 3, Ag and / or Ag on the outer peripheral side of the recording layer are provided.
Alternatively, if the Au concentration is made smaller than the Ag and / or Au concentration on the inner peripheral side, the recording linear velocity in the inner peripheral part is slow, and the CAV is low.
It can correspond to records and the like. In this case, the composition is
In order to maintain good repetitive recording characteristics over the entire surface,
The range is set so that 0.72 ≦ x + 2a ≦ 0.80 is satisfied.
【0023】即ち、請求項1記載の発明に関連して、S
b及びTeを必須元素とするIb族元素‐Vb族元素‐
VIb族元素からなる記録材料の結晶相に出現可能な相と
しては、単体や2元、3元系の化合物や合金相・固溶体
があるが、中でも、Ib‐Vb‐VIb,Vb‐VIb,V
b、例えば、AgSbTe2 ,準安定Sb3Te ,準安
定Sb‐Te固溶体,Sb2Te3,Sbが出現しやす
い。この中で、AgSbTe2 ,準安定Sb3Te ,準
安定Sb‐Te固溶体等のように、一般式IbVbVIb
2 ,準安定Vb3VIb,準安定Vb‐VIb固溶体,準安
定Ib‐Vb‐VIb固溶体で表される結晶の構造は空間
群Fm3mに属し、格子定数も0.615nmの近傍に
あるため、これらの結晶は互いに格子整合関係にある。
まず、記録層の結晶化部が単相の準安定Ib‐Vb‐VI
b固溶体のみからなる場合、粒界が存在しないか、仮に
結晶粒界が存在したとしても、この結晶粒界は比較的良
好な格子接合となっており、結晶粒界に大きな空隙は存
在せず、熱伝導率にむらを生じない。この場合には、光
ビームの強度分布と時間的プロファイルを忠実に反映し
た滑らかなアモルファス化部‐結晶化部の境界が得ら
れ、高記録密度領域で良好なジッタ値が得られる。この
準安定結晶相の記録時の熱衝撃に対する安定性が高い組
成領域は、(Ib)a(Vb)x(VIb)1-a-x なる組成式で示
される記録層に関するxの値が0.72≦x+2a≦
0.80の範囲内にあり、かつ、4a<1を満たす場合
であって、これは、準安定Ib‐Vb‐VIb固溶体が仮
に第1の相転移を起こし、混相状態となった場合でも、
上述した互いに格子整合関係にある準安定相を含む複数
の結晶相となるため、なお比較的良好な記録特性を維持
し得る組成領域でもある。That is, according to the first aspect of the present invention, S
Group Ib element with b and Te as essential elements -Vb group element-
The phases that can appear in the crystal phase of the recording material composed of Group VIb elements include simple substances, binary and ternary compounds, alloy phases and solid solutions, and among them, Ib-Vb-VIb, Vb-VIb and V
b, for example, AgSbTe 2, metastable Sb 3 Te, metastable Sb-Te solid solution, Sb 2 Te 3, Sb is likely to emerge. Among these, general formulas IbVbVIb, such as AgSbTe 2 , metastable Sb 3 Te, metastable Sb-Te solid solution, etc.
2. The structures of the crystals represented by the metastable Vb 3 VIb, the metastable Vb-VIb solid solution, and the metastable Ib-Vb-VIb solid solution belong to the space group Fm3m, and the lattice constant is near 0.615 nm. Are in lattice matching with each other.
First, the crystallization part of the recording layer is a single-phase metastable Ib-Vb-VI
b When the solid solution alone is used, there is no grain boundary, or even if a crystal grain boundary exists, the crystal grain boundary has a relatively good lattice junction, and no large void exists in the crystal grain boundary. No unevenness in thermal conductivity. In this case, a smooth boundary between the amorphized portion and the crystallized portion faithfully reflecting the intensity distribution and the temporal profile of the light beam is obtained, and a good jitter value is obtained in a high recording density region. The composition region where the metastable crystal phase has high stability against thermal shock during recording is such that the value x of the recording layer represented by the composition formula (Ib) a (Vb) x (VIb) 1-ax is 0.72. ≦ x + 2a ≦
0.80 and satisfy 4a <1, which means that even if the metastable Ib-Vb-VIb solid solution undergoes the first phase transition and enters a mixed phase state,
Since it is composed of a plurality of crystal phases including a metastable phase having a lattice matching relationship with each other, it is also a composition region in which relatively good recording characteristics can be maintained.
【0024】なお、複数の結晶相間、例えば、Ib‐V
b‐VIb安定結晶相とVb‐VIb準安定結晶相では、結
晶化速度に差異があるため、主要部は準安定相が占める
ことが好ましく、上記組成式では、a≦0.09の範囲
が好ましい。特に、Ag‐Sb‐Te系の記録材料で、
4a=1として、準安定相が存在し難い組成領域では、
結晶化速度が遅く、通常の記録線速領域では良好なる特
性は得られない。In addition, between a plurality of crystal phases, for example, Ib-V
Since there is a difference in the crystallization speed between the b-VIb stable crystal phase and the Vb-VIb metastable crystal phase, it is preferable that the main part is occupied by the metastable phase. preferable. In particular, Ag-Sb-Te based recording materials,
4a = 1, in a composition region where a metastable phase is unlikely to exist,
The crystallization speed is slow, and good characteristics cannot be obtained in a normal recording linear velocity region.
【0025】そして、従来技術のように、記録層の結晶
化部が格子整合関係にない複数の結晶相からなる場合、
結晶粒界での面の整合性がよくない場合には、粒界に空
孔や偏析が生じ、この粒界部分で熱伝導率にむらが生じ
る。さらに、結晶化速度は一般的に粒毎に異なるため、
結晶‐アモルファス部分の境界もこの結晶粒界を反映し
たものとなりやすく、アモルファス化部‐結晶化部の境
界に乱れが生じ、高記録密度領域では良好な特性が得ら
れない。また、結晶粒径を数nmオーダの微結晶にした
場合には、結晶粒界の滑らかさは得られるが、なお、高
記録密度の実現には問題がある。そして、互いに格子整
合関係にない粒界面では、界面部分の歪みや界面エネル
ギーが増加し、結晶化速度の低下や粒界からの腐食な
ど、好ましくない現象を生ずるため、結晶粒の微細化は
高記録密度には適さない。この点、本発明においては、
記録層の結晶化部が複数の結晶相からなる場合であって
も、生成する結晶相は同一の空間群Fm3mに属し、格
子定数も近接するため、粒界は単相の場合と同様に良好
なる接合となっている。このため、結晶化速度に差異は
あるものの、熱伝導の不均一性は比較的小さく、単相の
場合に準じた記録特性を有することとなる。In the case where the crystallized portion of the recording layer is composed of a plurality of crystal phases that are not in a lattice matching relationship as in the prior art,
If the conformity of the planes at the crystal grain boundaries is not good, vacancies and segregation occur at the grain boundaries, and the thermal conductivity becomes uneven at the grain boundaries. Furthermore, since the crystallization speed generally differs from grain to grain,
The boundary between the crystal and the amorphous portion tends to reflect the crystal grain boundary, and the boundary between the amorphous portion and the crystallized portion is disturbed, so that good characteristics cannot be obtained in a high recording density region. Further, when the crystal grain size is set to a fine crystal of several nm, smoothness of the crystal grain boundary can be obtained, but there is a problem in realizing high recording density. At grain boundaries that do not have a lattice-matching relationship with each other, undesired phenomena such as a decrease in crystallization speed and corrosion from grain boundaries occur due to an increase in strain and interface energy at the interface portions. Not suitable for recording density. In this regard, in the present invention,
Even when the crystallized portion of the recording layer is composed of a plurality of crystal phases, the generated crystal phases belong to the same space group Fm3m and have close lattice constants, so that the grain boundaries are as good as in the case of a single phase. Has become a joint. For this reason, although there is a difference in the crystallization speed, the non-uniformity of the heat conduction is relatively small, and the recording characteristics are similar to those of the single phase.
【0026】本発明による相変化光記録媒体の初期結晶
化では、準安定相の析出に適した初期化方法、例えば、
レーザビームによる初期化方法等が採用される。特に好
ましい構造は、(Ib)a(Vb)x(VIb)1-a-x 準安定固溶
体単相(請求項2)である。In the initial crystallization of the phase-change optical recording medium according to the present invention, an initialization method suitable for the precipitation of a metastable phase, for example,
An initialization method using a laser beam or the like is employed. A particularly preferred structure is (Ib) a (Vb) x (VIb) 1-ax metastable solid solution single phase (Claim 2).
【0027】Ib‐Vb‐VIb系記録層の結晶化速度に
は、組成依存性がある。記録層中のIb族元素やVIb族
元素の濃度が増えるほど低記録線速側に好適な記録層と
なり、Vb族元素の濃度が増えるほど高記録線速側に好
適な記録層となる。この結晶化速度と組成との間には一
定の対応関係がある。特に、Ag,Au或いはAg+A
uの濃度は結晶化速度に大きな影響を与える。即ち、A
g+Au濃度が増えるほど、結晶化速度は遅くなる。The crystallization rate of the Ib-Vb-VIb-based recording layer depends on the composition. As the concentration of the Ib group element or the VIb group element in the recording layer increases, the recording layer becomes more suitable for the low recording linear velocity side, and as the concentration of the Vb group element increases, the recording layer becomes more suitable for the higher recording linear velocity side. There is a certain correspondence between the crystallization rate and the composition. In particular, Ag, Au or Ag + A
The concentration of u has a great influence on the crystallization rate. That is, A
As the g + Au concentration increases, the crystallization speed decreases.
【0028】請求項4ないし8記載の発明では、特に、
CD‐RWなどに使用されるストラテジ(レーザダイオ
ードの発光パターン)を使用した場合の記録線速と記録
層の組成との適正な組合せが開示されている。即ち、記
録層中にAg及び/又はAuを含み、記録層の原子比率
での組成が(Ag,Au)a(Vb)x(VIb)1-a-x なる組成
式で表され、xが0.72≦x+2a≦0.80の範囲
内にあることを前提とした場合、記録線速1〜2m/s
に対応する媒体半径方向の部位に属する記録層の組成と
しては0.05≦a≦0.08の範囲内に設定され(請
求項4)、記録線速2〜3m/sに対応する媒体半径方
向の部位に属する記録層の組成としては0.03≦a≦
0.07の範囲内に設定され(請求項5)、記録線速3
〜4m/sに対応する媒体半径方向の部位に属する記録
層の組成としては0.02≦a≦0.06の範囲内に設
定され(請求項6)、記録線速4〜6m/sに対応する
媒体半径方向の部位に属する記録層の組成としては0.
01≦a≦0.05の範囲内に設定され(請求項7)、
記録線速6〜8m/sに対応する媒体半径方向の部位に
属する記録層の組成としては0.005≦a≦0.04
の範囲内に設定されている(請求項8)。In the inventions according to claims 4 to 8, in particular,
An appropriate combination of a recording linear velocity and a composition of a recording layer when a strategy (light emitting pattern of a laser diode) used for a CD-RW or the like is used is disclosed. That is, the recording layer contains Ag and / or Au, and the composition in the atomic ratio of the recording layer is represented by a composition formula of (Ag, Au) a (Vb) x (VIb) 1-ax , where x is 0. Assuming that it is within the range of 72 ≦ x + 2a ≦ 0.80, the recording linear velocity is 1-2 m / s.
The composition of the recording layer belonging to a portion in the radial direction of the medium corresponding to the medium radius is set within the range of 0.05 ≦ a ≦ 0.08 (claim 4), and the medium radius corresponding to the recording linear velocity of 2-3 m / s. The composition of the recording layer belonging to the portion in the direction is 0.03 ≦ a ≦
0.07 (claim 5), the recording linear velocity 3
The composition of the recording layer belonging to the portion in the medium radial direction corresponding to 44 m / s is set in the range of 0.02 ≦ a ≦ 0.06 (claim 6), and the recording linear velocity is 4 to 6 m / s. The composition of the recording layer belonging to the corresponding part in the radial direction of the medium is 0.1%
01 ≦ a ≦ 0.05 (claim 7),
The composition of the recording layer belonging to a portion in the medium radial direction corresponding to a recording linear velocity of 6 to 8 m / s is 0.005 ≦ a ≦ 0.04
(Claim 8).
【0029】[0029]
【発明の実施の形態】本発明の一実施の形態を図面を参
照して説明する。本発明の相変化光記録媒体は、その層
構成が特に限定されるものでなく、公知の任意構造のも
のに適用し得るが、一例として図1に示す構造例で説明
する。図1は相変化光記録媒体1の層構成の一例を示す
概念図である。この相変化光記録媒体1では、案内溝を
有するポリカーボネイト基板2上に、ZnS・SiO2
からなる第1保護層3、AgSbTe記録層4、ZnS
・SiO2 からなる第2保護層5、Al・Ti反射放熱
層6、UV硬化樹脂による環境保護層7が順次積層され
ている。このような相変化光記録媒体1は、例えば、そ
の記録線速が媒体半径方向の位置により異なるMCAV
方式により行われる仕様とされている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described with reference to the drawings. The layer structure of the phase change optical recording medium of the present invention is not particularly limited, and can be applied to a known arbitrary structure. An example of the structure will be described with reference to FIG. FIG. 1 is a conceptual diagram showing an example of the layer configuration of the phase change optical recording medium 1. In the phase change optical recording medium 1, on a polycarbonate substrate 2 having a guide groove, ZnS · SiO 2
First protective layer 3 made of AgSbTe recording layer 4, ZnS
A second protective layer 5 made of SiO 2 , an Al.Ti reflective heat radiation layer 6, and an environmental protective layer 7 made of a UV curable resin are sequentially laminated. Such a phase-change optical recording medium 1 has, for example, an MCAV whose recording linear velocity differs depending on the position in the medium radial direction.
It is a specification that is performed according to the method.
【0030】このような相変化光記録媒体1に関し、本
実施の形態では、その記録層4の組成等を明らかにする
ものである。即ち、この記録層4はSb及びTeを必須
元素としてIb族元素、Vb族元素及びVIb族元素を有
する相変化記録材料により形成されることを基本とす
る。そして、少なくとも1つの準安定結晶相を含む単数
又は複数の結晶相を有する結晶化状態とアモルファス化
状態との間の相転移における光学的性質の変化を利用す
るものとされている。ここに、記録層4の原子比率での
組成を(Ib)a(Vb)x(VIb)1-a-x で表す組成式におい
てVb族元素の組成を表すxが0.72≦x+2a≦
0.80の範囲内に設定されており、単数又は複数の結
晶相が空間群Fm3mに属する結晶相とされている。加
えて、相変化光記録媒体1の記録線速の変化に対応して
記録層4の組成に媒体半径方向で差異をもたらされてい
る。In the present embodiment, with respect to such a phase change optical recording medium 1, the composition and the like of the recording layer 4 are clarified. That is, the recording layer 4 is basically formed of a phase-change recording material having Sb and Te as essential elements and having an Ib group element, a Vb group element, and a VIb group element. In addition, the method utilizes a change in optical properties in a phase transition between a crystallized state having one or more crystal phases including at least one metastable crystal phase and an amorphous state. Here, in the composition formula expressed by (Ib) a (Vb) x (VIb) 1-ax , where the composition at the atomic ratio of the recording layer 4 is 0.72≤x + 2a≤
It is set within the range of 0.80, and one or more crystal phases are considered to belong to the space group Fm3m. In addition, there is a difference in the composition of the recording layer 4 in the medium radial direction corresponding to the change in the recording linear velocity of the phase-change optical recording medium 1.
【0031】本実施の形態では、このような組成等を採
る根拠を具体的測定例に基づき明らかにするものであ
る。即ち、記録層4の組成と記録線速と繰返し記録回数
(記録可能回数)との関係を図1に示す層構造の相変化
光記録媒体1について具体的に測定したものであり、記
録層1〜記録層15なる15種類の記録層サンプルにつ
いてその結果を表1及び表2に示す。ここに、記録スト
ラテジ(記録時のレーザダイオードの発光パターン)
は、CD‐RWで採用されているものを使用した。ま
た、記録可能回数は、ウインドウ幅Twで規格化したジ
ッタの値σ/Twが13%を上回らない最大繰返し記録
回数で判定したものである。In the present embodiment, the basis for adopting such a composition or the like is clarified based on a specific measurement example. That is, the relationship between the composition of the recording layer 4, the recording linear velocity, and the number of repetitive recordings (recordable times) was specifically measured for the phase-change optical recording medium 1 having the layer structure shown in FIG. Table 1 and Table 2 show the results of fifteen kinds of recording layer samples, namely, recording layer 15. Here, the recording strategy (the emission pattern of the laser diode during recording)
Used the one adopted in the CD-RW. The number of recordable times is determined by the maximum number of repetitive recordings in which the value of jitter σ / Tw normalized by the window width Tw does not exceed 13%.
【0032】[0032]
【表1】 [Table 1]
【0033】[0033]
【表2】 [Table 2]
【0034】表1及び表2で、記録可能回数が1000
回以上であることが確認された記録線速は、Ag濃度a
=0.08に対しては1〜2m/s(記録層1)、Ag
濃度a=0.07に対しては1〜3m/s(記録層
2)、Ag濃度a=0.06に対しては1〜4m/s
(記録層3)、Ag濃度a=0.05に対しては1〜6
m/s(記録層4)、Ag濃度a=0.04及びa=
0.03に対しては2〜8m/s(記録層5,6,10
〜14)、Ag濃度a=0.02に対しては3〜8m/
s(記録層7)、Ag濃度a=0.01に対しては4〜
8m/s(記録層8)、Ag濃度a=0.005に対し
ては6〜8m/s(記録層9)となる。即ち、記録線速
1〜2m/s,2〜3m/s,3〜4m/s,4〜6m
/s,6〜8m/sの各々に対応するAg濃度aは、各
々、0.05≦a≦0.08,0.03≦a≦0.0
7,0.02≦a≦0.06,0.01≦a≦0.0
5,0.005≦a≦0.04の範囲である。Agの一
部又は全部をAuに置換しても同様な結果が得られる。In Tables 1 and 2, the number of recordable times is 1000
The recording linear velocity which was confirmed to be equal to or more than
= 0.08, 1-2 m / s (recording layer 1), Ag
1-3 m / s (recording layer 2) for density a = 0.07, 1-4 m / s for Ag density a = 0.06
(Recording layer 3), 1 to 6 for Ag concentration a = 0.05
m / s (recording layer 4), Ag concentration a = 0.04 and a =
2 to 8 m / s for 0.03 (recording layers 5, 6, 10
~ 14), 3 to 8 m / for Ag concentration a = 0.02
s (recording layer 7), 4 to 4 for Ag concentration a = 0.01
For 8 m / s (recording layer 8) and Ag concentration a = 0.005, it becomes 6 to 8 m / s (recording layer 9). That is, the recording linear velocity is 1-2 m / s, 2-3 m / s, 3-4 m / s, 4-6 m
/ S, Ag concentration a corresponding to each of 6 to 8 m / s is 0.05 ≦ a ≦ 0.08, 0.03 ≦ a ≦ 0.0, respectively.
7,0.02 ≦ a ≦ 0.06,0.01 ≦ a ≦ 0.0
5, 0.005 ≦ a ≦ 0.04. Similar results can be obtained by replacing some or all of Ag with Au.
【0035】なお、表1及び表2の記録層の初期結晶化
は、サンプル記録層15を除き、レーザビーム照射によ
り行った。サンプル記録層1の初期結晶化はランプアニ
ールにより行った。サンプル記録層5,10〜14の測
定結果によれば、前述した(Ib)a(Vb)x(VIb)1-a-x
で表す組成式(ここでは、AgaSbxTe1-a-x )にお
いて、xが0.72≦x+2a≦0.80の範囲内では
繰返し記録回数が良好であることが分かる。繰返し記録
特性の全面にわたる均一性を確保する上では、パラメー
タx+2aの値が一定であることが好ましく、特に、こ
の値が±0.02であることが好ましいといえる。The initial crystallization of the recording layers in Tables 1 and 2 was performed by laser beam irradiation except for the sample recording layer 15. Initial crystallization of the sample recording layer 1 was performed by lamp annealing. According to the measurement results of the sample recording layers 5, 10 to 14, (Ib) a (Vb) x (VIb) 1-ax
It can be seen that, in the composition formula (here, Ag a Sb x Te 1-ax ), when x is in the range of 0.72 ≦ x + 2a ≦ 0.80, the number of repetitive recordings is good. In order to ensure the uniformity of the repetitive recording characteristics over the entire surface, it is preferable that the value of the parameter x + 2a is constant, and it is particularly preferable that this value be ± 0.02.
【0036】ちなみに、本発明と同一の組成を有する記
録総鵜構成であっても、サンプル記録層15では、準安
定相が分解した場合の析出物であるSbやSb2Te3等
の析出が起こり、高記録密度には不適となる。準安定相
は長時間の高温アニールにより安定相へ相分離する。By the way, even when the recording layer has the same composition as that of the present invention, the sample recording layer 15 does not precipitate Sb, Sb 2 Te 3, etc., which are precipitates when the metastable phase is decomposed. This is unsuitable for high recording densities. The metastable phase separates into a stable phase by prolonged high-temperature annealing.
【0037】[0037]
【実施例】図1に示した層構成の相変化光記録媒体1を
用い、その記録層4の組成に半径方向の分布を持たせた
場合の繰返し記録回数と記録層4の組成及び初期化後の
結晶構造との関係を実施例1〜3とし、組成に半径方向
に濃度分布を有しない比較例1と対比して表3に示す。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A phase change optical recording medium 1 having the layer structure shown in FIG. 1 is used, and the number of repetitive recordings, the composition of the recording layer 4 and the initialization when the composition of the recording layer 4 has a radial distribution. Table 3 shows the relationship with the subsequent crystal structure in Examples 1 to 3, in comparison with Comparative Example 1 in which the composition does not have a concentration distribution in the radial direction.
【0038】[0038]
【表3】 [Table 3]
【0039】実施例1では、Ib元素であるAg濃度に
半径位置rに依存する組成勾配を設け、これに応じて繰
返し記録回数が最適となるように、Vb族元素であるS
b及びVI族元素であるTe濃度に勾配を持たせている。
これにより、900rpmでのMCAV記録において、
全面にわたる高繰返し記録が可能となったものである。In Example 1, a composition gradient depending on the radial position r is provided in the Ag concentration as the Ib element, and the Sb as the Vb group element is adjusted so that the number of times of repetitive recording is optimized accordingly.
The concentration of Te which is a group b element and a group VI element has a gradient.
Thus, in MCAV recording at 900 rpm,
High repetitive recording over the entire surface is now possible.
【0040】実施例2では、1200rpmでのMCA
V記録に対応するもので、Ag及びAu濃度に勾配があ
る。さらに、Vb族元素としてBiが、VI族元素として
Seが添加されている。実施例2の場合も全面にわたる
繰返し記録特性が良好であることがわかる。In the second embodiment, the MCA at 1200 rpm is used.
This corresponds to V recording, and there is a gradient in the concentration of Ag and Au. Further, Bi is added as a Vb group element and Se is added as a VI group element. In the case of Example 2, too, the repetitive recording characteristics over the entire surface are good.
【0041】実施例3では、600rpmのMCAV記
録に対応するものであるが、Ib族元素はAuのみであ
る。The third embodiment corresponds to MCAV recording at 600 rpm, but Au is the only Ib group element.
【0042】ちなみに、組成に濃度分布を持たない比較
例1の繰返し記録特性によれば、最適記録線速が確保さ
れる半径位置では繰返し記録特性は良好であるものの、
これより内周側では記録(アモルファス化)が困難とな
り、外周側では消去(結晶化)が困難となり、全面にわ
たる均一な繰返し記録特性は得られないことが分かる。Incidentally, according to the repetitive recording characteristics of Comparative Example 1 having no concentration distribution in the composition, the repetitive recording characteristics are good at the radial position where the optimum recording linear velocity is ensured,
From this, it can be seen that recording (amorphization) becomes difficult on the inner peripheral side, and erasing (crystallization) becomes difficult on the outer peripheral side, and uniform repetitive recording characteristics over the entire surface cannot be obtained.
【0043】比較例2として、Ag‐Sb‐Te系の結
晶化速度に影響を与えるSb濃度に勾配を持たせた場
合、即ち、(Ag‐Sb‐Te)1-γ(Sb)γと表される
組成式で、γの値を変化させ、結晶化速度を最適化した
場合の繰返し記録特性を表4に示す。As Comparative Example 2, the case where a gradient was applied to the Sb concentration which affects the crystallization rate of the Ag-Sb-Te system, that is, (Ag-Sb-Te) 1-γ (Sb) γ Table 4 shows the repetitive recording characteristics when the crystallization rate was optimized by changing the value of γ in the composition formula shown below.
【0044】[0044]
【表4】 [Table 4]
【0045】組成条件0.72≦x+2a≦0.80の
範囲から逸脱するにつれ、急激に繰返し記録回数が悪化
しているのが分かる。即ち、組成条件0.72≦x+2
a≦0.80は準安定相の安定条件を示す本発明に固有
のパラメータといえる。特に、不純物の影響がない場合
の繰返し記録回数が良好な条件は、x+2a=0.75
である。また、この条件は、その他の特性、例えばオー
バライトシェルフ等の保存特性が良好な条件とも一致す
る。It can be seen that as the composition condition deviates from the range of 0.72 ≦ x + 2a ≦ 0.80, the number of repetitive recordings sharply deteriorates. That is, the composition condition 0.72 ≦ x + 2
a ≦ 0.80 can be said to be a parameter specific to the present invention, which indicates the stability condition of the metastable phase. In particular, when the number of repetitive recordings is good when there is no influence of impurities, x + 2a = 0.75
It is. This condition also matches other characteristics, for example, conditions under which the storage characteristics of the overwrite shelf or the like are good.
【0046】一方、記録層に不純物、例えば、C,B,
N,Pb,Sn,Zn,遷移金属元素等を添加する場
合、不純物の結合状態や保護層界面部分での偏析の状態
により上記の最適条件x+2a=0.75は若干シフト
する。例えば、記録層に窒素を添加する場合はx+2a
>0.75となる。しかし、不純物が概ね5at.% 以下
の微量である場合には本発明に該当する。不純物が無添
加の場合や不純物の添加量の面内分布がない場合には、
全面にわたる良好な繰返し記録特性を維持する上で、パ
ラメータx+2aの値を一定とすることが特に好まし
く、このパラメータx+2aの値を全面にわたり±0.
02以内とすることが好ましい。On the other hand, impurities such as C, B,
When N, Pb, Sn, Zn, a transition metal element, or the like is added, the above-mentioned optimum condition x + 2a = 0.75 is slightly shifted depending on the bonding state of impurities and the state of segregation at the interface of the protective layer. For example, when nitrogen is added to the recording layer, x + 2a
> 0.75. However, the present invention corresponds to the case where the amount of impurities is as small as about 5 at.% Or less. When no impurities are added or when there is no in-plane distribution of the amount of impurities added,
In order to maintain good repetitive recording characteristics over the entire surface, it is particularly preferable to keep the value of the parameter x + 2a constant.
It is preferable to be within 02.
【0047】[0047]
【発明の効果】請求項1記載の発明の相変化光記録媒体
によれば、CAV方式或いはMCAV方式のように媒体
の部位によって異なる記録線速で記録・再生を行うラン
ダムアクセス性に優れたタイプの相変化光記録媒体に関
して、その高記録密度での繰返し記録特性を向上させる
ことができる。According to the phase change optical recording medium of the first aspect of the present invention, a type excellent in random access, such as a CAV system or an MCAV system, which performs recording / reproducing at a different recording linear velocity depending on a part of the medium. With regard to the phase change optical recording medium described above, the repetitive recording characteristics at a high recording density can be improved.
【0048】請求項2記載の発明によれば、結晶化状態
の記録層中の結晶相が準安定固溶体単相であるので、準
安定相の析出に適したものとなる。According to the second aspect of the present invention, since the crystal phase in the recording layer in the crystallized state is a metastable solid solution single phase, it is suitable for the precipitation of a metastable phase.
【0049】請求項3記載の発明によれば、Ag及び/
又はAuを含む組成で、その元素濃度を内周部側よりも
外周部側の方を小さく設定しているので、記録線速の遅
速と結晶化速度の遅速とを対応させることができ、高記
録密度での繰返し記録特性を向上させることができる。According to the third aspect of the present invention, Ag and / or
Alternatively, since the element concentration is set to be smaller on the outer peripheral side than on the inner peripheral side in the composition containing Au, the slowing of the recording linear velocity and the slowing of the crystallization speed can be corresponded, and the high The repetitive recording characteristics at the recording density can be improved.
【0050】請求項4ないし8記載の発明によれば、例
えば、CD‐RWなどに使用されるストラテジを使用し
た場合の記録線速と記録層の組成との適正な組合せを提
供することができる。According to the fourth to eighth aspects of the present invention, it is possible to provide an appropriate combination of the recording linear velocity and the composition of the recording layer when a strategy used for, for example, a CD-RW is used. .
【図1】本発明の一実施の形態の相変化光記録媒体の層
構成を示す断面図である。FIG. 1 is a sectional view showing a layer configuration of a phase change optical recording medium according to an embodiment of the present invention.
4 記録層 4 Recording layer
Claims (8)
なる相変化光記録媒体において、 Sb及びTeを必須元素としてIb族元素、Vb族元素
及びVIb族元素を有する相変化記録材料を記録層とし、
前記記録層が少なくとも1つの準安定結晶相を含み空間
群Fm3mに属する単数又は複数の結晶相を有する結晶
化状態とアモルファス化状態との間の相転移における光
学的性質の変化を示し、前記記録層の原子比率での組成
を(Ib)a(Vb)x(VIb)1-a-x で表す組成式においてV
b族元素の組成を表すxが0.72≦x+2a≦0.8
0の範囲内に設定されて、前記記録線速の変化に対応し
て前記記録層の組成に媒体半径方向で差異を有すること
を特徴とする相変化光記録媒体。1. A phase change optical recording medium in which a recording linear velocity varies depending on a position in a radial direction of a medium, wherein a phase change recording material having a group Ib element, a group Vb element and a group VIb element with Sb and Te as essential elements is used as a recording layer. age,
The recording layer includes at least one metastable crystal phase, and has a single or a plurality of crystal phases belonging to a space group Fm3m, and shows a change in an optical property in a phase transition between a crystallized state and an amorphous state; In the composition formula represented by (Ib) a (Vb) x (VIb) 1-ax ,
x representing the composition of the group b element is 0.72 ≦ x + 2a ≦ 0.8
A phase change optical recording medium, wherein the phase difference is set in a range of 0, and the composition of the recording layer has a difference in a medium radial direction in accordance with the change in the recording linear velocity.
安定固溶体単相であることを特徴とする請求項1記載の
相変化光記録媒体。2. The phase-change optical recording medium according to claim 1, wherein a crystal phase in the recording layer in a crystallized state is a metastable solid solution single phase.
一方の元素を有し、その元素濃度が内周部側に対して外
周部側の方が小さく設定されていることを特徴とする請
求項1又は2記載の相変化光記録媒体。3. The recording layer according to claim 1, wherein the recording layer has at least one element of Ag and Au, and the concentration of the element is set smaller on the outer peripheral side than on the inner peripheral side. Item 3. The phase change optical recording medium according to Item 1 or 2.
g,Au)a(Vb)x(VIb)1-a-xなる組成式で表され、記
録線速1〜2m/sに対応する媒体半径方向の部位に属
する前記記録層の組成として0.05≦a≦0.08の
範囲内に設定されていることを特徴とする請求項3記載
の相変化光記録媒体。4. The composition of an atomic ratio of the recording layer is (A)
g, Au) a (Vb) x (VIb) 1 -ax The composition of the recording layer belonging to a radial direction of the medium corresponding to a recording linear velocity of 1 to 2 m / s is defined as 0.05 ≦ 4. The phase change optical recording medium according to claim 3, wherein a is set within a ≦ 0.08.
g,Au)a(Vb)x(VIb)1-a-xなる組成式で表され、記
録線速2〜3m/sに対応する媒体半径方向の部位に属
する前記記録層の組成として0.03≦a≦0.07の
範囲内に設定されていることを特徴とする請求項3記載
の相変化光記録媒体。5. The composition of the recording layer having an atomic ratio of (A)
g, Au) a (Vb) x (VIb) 1-ax The composition of the recording layer belonging to a portion in the radial direction of the medium corresponding to a recording linear velocity of 2 to 3 m / s is 0.03 ≦ 4. The phase change optical recording medium according to claim 3, wherein a is set within a range of a ≦ 0.07.
g,Au)a(Vb)x(VIb)1-a-xなる組成式で表され、記
録線速3〜4m/sに対応する媒体半径方向の部位に属
する前記記録層の組成として0.02≦a≦0.06の
範囲内に設定されていることを特徴とする請求項3記載
の相変化光記録媒体。6. The composition of the recording layer having an atomic ratio of (A)
g, Au) a (Vb) x (VIb) 1-ax , wherein the composition of the recording layer belonging to the radial direction of the medium corresponding to the recording linear velocity of 3 to 4 m / s is 0.02 ≦ 4. The phase change optical recording medium according to claim 3, wherein a is set within a range of a ≦ 0.06.
g,Au)a(Vb)x(VIb)1-a-xなる組成式で表され、記
録線速4〜6m/sに対応する媒体半径方向の部位に属
する前記記録層の組成として0.01≦a≦0.05の
範囲内に設定されていることを特徴とする請求項3記載
の相変化光記録媒体。7. The composition of the recording layer at an atomic ratio of (A)
g, Au) a (Vb) x (VIb) 1-ax The composition of the recording layer belonging to a radial direction of the medium corresponding to a recording linear velocity of 4 to 6 m / s is defined as 0.01 ≦ 0.01. 4. The phase-change optical recording medium according to claim 3, wherein a is set within a range of a ≦ 0.05.
g,Au)a(Vb)x(VIb)1-a-xなる組成式で表され、記
録線速6〜8m/sに対応する媒体半径方向の部位に属
する前記記録層の組成として0.005≦a≦0.04
の範囲内に設定されていることを特徴とする請求項3記
載の相変化光記録媒体。8. The composition of the recording layer having an atomic ratio of (A)
g, Au) a (Vb) x (VIb) 1-ax The composition of the recording layer belonging to a radial direction of the medium corresponding to a recording linear velocity of 6 to 8 m / s is 0.005 ≦ a ≦ 0.04
The phase change optical recording medium according to claim 3, wherein the value is set within the range of:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10130029A JPH11321094A (en) | 1998-05-13 | 1998-05-13 | Phase change optical recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10130029A JPH11321094A (en) | 1998-05-13 | 1998-05-13 | Phase change optical recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11321094A true JPH11321094A (en) | 1999-11-24 |
Family
ID=15024400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10130029A Pending JPH11321094A (en) | 1998-05-13 | 1998-05-13 | Phase change optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11321094A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7440380B2 (en) | 2000-03-03 | 2008-10-21 | Ricoh Company, Ltd. | Optical information recording medium and recording apparatus |
| US7510753B2 (en) | 2004-10-01 | 2009-03-31 | Kabushiki Kaisha Toshiba | Phase-change optical recording media |
| US7858166B2 (en) | 2006-02-02 | 2010-12-28 | Kabushiki Kaisha Toshiba | Phase change recording medium |
| US7909447B2 (en) | 2006-01-23 | 2011-03-22 | Fujifilm Corporation | Inkjet recording method and inkjet-recording material |
-
1998
- 1998-05-13 JP JP10130029A patent/JPH11321094A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7440380B2 (en) | 2000-03-03 | 2008-10-21 | Ricoh Company, Ltd. | Optical information recording medium and recording apparatus |
| US7539098B2 (en) | 2000-03-03 | 2009-05-26 | Ricoh Company, Ltd. | Optical information recording medium and recording apparatus |
| US7510753B2 (en) | 2004-10-01 | 2009-03-31 | Kabushiki Kaisha Toshiba | Phase-change optical recording media |
| US7909447B2 (en) | 2006-01-23 | 2011-03-22 | Fujifilm Corporation | Inkjet recording method and inkjet-recording material |
| US7858166B2 (en) | 2006-02-02 | 2010-12-28 | Kabushiki Kaisha Toshiba | Phase change recording medium |
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