JPH11345949A5 - - Google Patents

Info

Publication number: JPH11345949A5
Authority: JP; Japan
Prior art keywords: trench; integrated circuit; epitaxial layer; lining; oxide collar
Prior art date: 1999-04-06
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Withdrawn

Application number

JP1999098944A

Other languages

English (en)

Other versions

JPH11345949A (ja

Filing date

1999-04-06

Publication date

2006-03-30

1998-04-06 Priority claimed from US09/056,119 external-priority patent/US6265741B1/en

1999-04-06 Application filed filed Critical

1999-12-14 Publication of JPH11345949A publication Critical patent/JPH11345949A/ja

2006-03-30 Publication of JPH11345949A5 publication Critical patent/JPH11345949A5/ja

Status Withdrawn legal-status Critical Current

Links

Description

【特許請求の範囲】
【請求項１】半導体集積回路であり、前記集積回路がトレンチキャパシタを有し、前記トレンチキャパシタがエピタキシャル層を有し、前記エピタキシャル層が酸化物カラーの下方にトレンチ側面の下部を裏打ちし、酸化物カラーがトレンチの上部を裏打ちすることを特徴とする、半導体集積回路。

JP11098944A 1998-04-06 1999-04-06 半導体集積回路 Withdrawn JPH11345949A (ja)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US09/056119		1998-04-06
US09/056,119 US6265741B1 (en)	1998-04-06	1998-04-06	Trench capacitor with epi buried layer

Publications (2)

Publication Number	Publication Date
JPH11345949A JPH11345949A (ja)	1999-12-14
JPH11345949A5 true JPH11345949A5 (ja)	2006-03-30

Family

ID=22002267

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP11098944A Withdrawn JPH11345949A (ja)	1998-04-06	1999-04-06	半導体集積回路

Country Status (6)

Country	Link
US (1)	US6265741B1 (ja)
EP (1)	EP0949684A3 (ja)
JP (1)	JPH11345949A (ja)
KR (1)	KR19990082939A (ja)
CN (1)	CN1145214C (ja)
TW (1)	TW425693B (ja)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6310375B1 (en) *	1998-04-06	2001-10-30	Siemens Aktiengesellschaft	Trench capacitor with isolation collar and corresponding manufacturing method
US5945704A (en) *	1998-04-06	1999-08-31	Siemens Aktiengesellschaft	Trench capacitor with epi buried layer
US6018174A (en) *	1998-04-06	2000-01-25	Siemens Aktiengesellschaft	Bottle-shaped trench capacitor with epi buried layer
US6037620A (en) *	1998-06-08	2000-03-14	International Business Machines Corporation	DRAM cell with transfer device extending along perimeter of trench storage capacitor
US6307247B1 (en) *	1999-07-12	2001-10-23	Robert Bruce Davies	Monolithic low dielectric constant platform for passive components and method
JP3457236B2 (ja) *	1999-11-05	2003-10-14	茂徳科技股▲ふん▼有限公司	深いトレンチキャパシター蓄積電極の製造方法
DE19956078B4 (de)	1999-11-22	2006-12-28	Infineon Technologies Ag	Verfahren zur Herstellung eines Isolationskragens in einem Grabenkondensators
DE19957123B4 (de) *	1999-11-26	2006-11-16	Infineon Technologies Ag	Verfahren zur Herstellung einer Zellenanordnung für einen dynamischen Halbleiterspeicher
DE19956978B4 (de) *	1999-11-26	2008-05-15	Promos Technologies, Inc.	Verfahren zur Herstellung eines tiefen flaschenförmigen Graben-Kondensators
US6387772B1 (en) *	2000-04-25	2002-05-14	Agere Systems Guardian Corp.	Method for forming trench capacitors in SOI substrates
US6465373B1 (en) *	2000-08-31	2002-10-15	Micron Technology, Inc.	Ultra thin TCS (SiCl4) cell nitride for DRAM capacitor with DCS (SiH2Cl2) interface seeding layer
AUPR174800A0 (en) *	2000-11-29	2000-12-21	Australian National University, The	Semiconductor processing
DE10111755C1 (de) *	2001-03-12	2002-05-16	Infineon Technologies Ag	Verfahren zur Herstellung einer Speicherzelle eines Halbleiterspeichers
DE10120053A1 (de) *	2001-04-24	2002-11-14	Infineon Technologies Ag	Stressreduziertes Schichtsystem
MY144264A (en) *	2001-11-29	2011-08-29	Transform Solar Pty Ltd	Semiconductur texturing process
KR100442781B1 (ko) *	2001-12-24	2004-08-04	동부전자 주식회사	트렌치 캐패시터를 구비한 반도체소자 및 그 제조방법
DE10205077B4 (de) *	2002-02-07	2007-03-08	Infineon Technologies Ag	Halbleiterspeicherzelle mit einem Graben und einem planaren Auswahltransistor und Verfahren zu ihrer Herstellung
US6534824B1 (en)	2002-02-20	2003-03-18	International Business Machines Corporation	Self-aligned punch through stop for 6F2 rotated hybrid DRAM cell
US6734524B1 (en)	2002-12-31	2004-05-11	Motorola, Inc.	Electronic component and method of manufacturing same
TW584931B (en) *	2003-04-10	2004-04-21	Nanya Technology Corp	Collar dielectric process for preventing top size of deep trench from enlargement
US7182188B2 (en) *	2005-02-16	2007-02-27	Honeywell International, Inc.	Isolator using externally pressurized sealing bellows
DE102006029701B4 (de) *	2006-06-28	2017-06-01	Infineon Technologies Ag	Halbleiterbauteil sowie Verfahren zur Herstellung eines Halbleiterbauteils
US7982284B2 (en)	2006-06-28	2011-07-19	Infineon Technologies Ag	Semiconductor component including an isolation structure and a contact to the substrate
CN101409210B (zh) *	2007-10-09	2010-06-02	南亚科技股份有限公司	半导体元件及其制作方法
US7608908B1 (en)	2008-05-22	2009-10-27	Freescale Semiconductor, Inc.	Robust deep trench isolation
US8327985B2 (en) *	2009-06-22	2012-12-11	Honeywell International Inc.	Two stage vibration isolator
TWI826125B (zh) *	2022-05-24	2023-12-11	南亞科技股份有限公司	具有多層介電質的儲存電容器
US12176386B2 (en)	2022-05-24	2024-12-24	Nanya Technology Corporation	Storage capacitor with multiple dielectrics
US20230389267A1 (en) *	2022-05-24	2023-11-30	Nanya Technology Corporation	Method of fabricating storage capacitor with multiple dielectrics
GB2633551A (en) *	2023-09-07	2025-03-19	X Fab Global Services Gmbh	CMOS devices for high-voltage applications

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH02111062A (ja) *	1988-10-20	1990-04-24	Matsushita Electric Ind Co Ltd	半導体メモリの製造方法
US5250829A (en) *	1992-01-09	1993-10-05	International Business Machines Corporation	Double well substrate plate trench DRAM cell array
SG45211A1 (en) *	1992-01-09	1998-01-16	Ibm	Double grid and double well substrate plate trench dram cell array
JPH0637275A (ja) *	1992-07-13	1994-02-10	Toshiba Corp	半導体記憶装置及びその製造方法
TW366585B (en) *	1996-08-17	1999-08-11	United Microelectronics Corp	Manufacturing method of low-temperature epitaxy titanium silicide
US5945704A (en) *	1998-04-06	1999-08-31	Siemens Aktiengesellschaft	Trench capacitor with epi buried layer

1998
- 1998-04-06 US US09/056,119 patent/US6265741B1/en not_active Expired - Lifetime
1999
- 1999-04-01 EP EP99106682A patent/EP0949684A3/en not_active Withdrawn
- 1999-04-01 TW TW088105191A patent/TW425693B/zh not_active IP Right Cessation
- 1999-04-01 CN CNB991059719A patent/CN1145214C/zh not_active Expired - Fee Related
- 1999-04-06 KR KR1019990011817A patent/KR19990082939A/ko not_active Withdrawn
- 1999-04-06 JP JP11098944A patent/JPH11345949A/ja not_active Withdrawn

Publication	Publication Date	Title
JPH11345949A5 (ja)	2006-03-30
USD442462S1 (en)	2001-05-22	Pull
USD439048S1 (en)	2001-03-20	Equipment case
USD449026S1 (en)	2001-10-09	Vehicle center console
USD465081S1 (en)	2002-11-05	Shoe upper
USD460282S1 (en)	2002-07-16	Chair
USD461369S1 (en)	2002-08-13	Cup
USD436532S1 (en)	2001-01-23	Capsule
USD471343S1 (en)	2003-03-11	Glove
USD445673S1 (en)	2001-07-31	Capsule
USD450698S1 (en)	2001-11-20	Portion of an electronic mouse
JPH11204793A5 (ja)	2005-12-08
USD473685S1 (en)	2003-04-22	Buffing pad
USD473641S1 (en)	2003-04-22	Breast pad
USD489887S1 (en)	2004-05-18	Sock
GB2360631B (en)	2003-09-03	Trench isolation structure, semiconductor device having the same, and trench isolation method
USD499879S1 (en)	2004-12-21	Sock
USD498045S1 (en)	2004-11-09	Sock
USD483596S1 (en)	2003-12-16	Dual purpose floor mat
USD497712S1 (en)	2004-11-02	Sock
WO2003005416A3 (en)	2003-09-25	Trench structure for semiconductor devices
USD465789S1 (en)	2002-11-19	Graphic operating icon of a user interface for a portion of a medical playback device
USD446303S1 (en)	2001-08-07	Surface pattern of a seam for an absorbent article
USD495131S1 (en)	2004-08-31	Sock
USD433321S (en)	2000-11-07	Bed leg foot protector