JPH113624A - Encapsulated contact material and encapsulated contact using said material for electrodes - Google Patents
Encapsulated contact material and encapsulated contact using said material for electrodesInfo
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- JPH113624A JPH113624A JP9154196A JP15419697A JPH113624A JP H113624 A JPH113624 A JP H113624A JP 9154196 A JP9154196 A JP 9154196A JP 15419697 A JP15419697 A JP 15419697A JP H113624 A JPH113624 A JP H113624A
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- coating layer
- contact
- encapsulated
- contact material
- encapsulated contact
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Abstract
(57)【要約】
【課題】 高負荷条件でも接点寿命が長い、安価な封入
接点材料を提供する。
【解決手段】 接点基材上に厚さ0.1μm以上の被覆
層が形成され、前記被覆層がCr、Mn、Fe、Co、
Niのうちの少なくとも1元素を0.5〜50at%含
み、CまたはSiのうちの少なくとも1元素を0.5〜
50at%含み、O(酸素)を0〜40at%含み、残部が
59at%以上のCuまたはAgからなる封入接点材料。
【効果】 Cr、Mn、Fe、Co、Niなどのアーク
損傷分散元素を含み、またCまたはSiの耐溶融元素を
含むため、アーク放電が発生する高負荷条件でも良好な
接点寿命が得られる。また高価なRhやRuなどを用い
ないので安価である。[PROBLEMS] To provide an inexpensive encapsulated contact material having a long contact life even under high load conditions. SOLUTION: A coating layer having a thickness of 0.1 μm or more is formed on a contact substrate, and the coating layer is formed of Cr, Mn, Fe, Co,
0.5 to 50 at% of at least one element of Ni, and 0.5 to 50 at% of at least one element of C or Si
An encapsulated contact material containing 50 at%, containing 0 to 40 at% of O (oxygen), and a balance of 59 at% or more of Cu or Ag. [Effect] Since it contains an arc damage dispersing element such as Cr, Mn, Fe, Co, and Ni, and contains a melting element of C or Si, a good contact life can be obtained even under a high load condition in which arc discharge occurs. Also, since expensive Rh and Ru are not used, the cost is low.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、非酸化性雰囲気中
で開閉を行う封入型のリ−ドスイッチ、リレーなどの電
極に適した、開閉動作が長期間安定して行われ、かつ安
価な封入接点材料に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an encapsulated lead switch for opening and closing in a non-oxidizing atmosphere, suitable for electrodes of relays, etc., which can be operated stably for a long period of time and is inexpensive. It relates to an encapsulated contact material.
【0002】[0002]
【従来の技術】封入接点は、非酸化性雰囲気としたガラ
スやプラスチック製の封入容器の中に封入接点材料が電
極として装着された構造のものである。前記封入接点材
料には、従来よりNi−Fe系合金基材上にAg、A
u、Cuなどのめっき層を形成し、その上に、高融点
で、電気伝導度、硬度、耐消耗性に優れるRhまたはR
uの層を被覆した材料が多用されている。前記Ag、A
u、Cuなどのめっき層は、接点の開閉動作時のジュー
ル熱で、被覆層のRhやRuが基材に拡散するのを防止
し、またRhまたはRuの被覆層と接点基材との密着性
を改善する作用も果たす。2. Description of the Related Art A sealed contact has a structure in which a sealed contact material is mounted as an electrode in a glass or plastic sealed container in a non-oxidizing atmosphere. Conventionally, the encapsulated contact material includes Ag, A on a Ni—Fe alloy base material.
forming a plating layer of u, Cu, etc., on which Rh or R having a high melting point and excellent electrical conductivity, hardness, and wear resistance;
Materials coated with a layer of u are often used. Ag, A
The plating layer of u, Cu, etc. prevents the diffusion of Rh or Ru of the coating layer to the base material by the Joule heat during the opening / closing operation of the contact, and the adhesion between the Rh or Ru coating layer and the contact base material. Also acts to improve the performance.
【0003】[0003]
【発明が解決しようとする課題】しかし、前記の封入接
点材料は、高価なRhやRuを用いるためコスト高にな
るという欠点があった。そこで、Ni−Fe系合金基材
上にCu−Ni拡散層を形成した封入接点材料が提案さ
れた。しかし、この材料はアーク放電が発生するような
高負荷条件では接点間に開閉不良が起きるため、やはり
RhやRuを被覆する必要があり、コスト的に不利であ
った。However, the above-mentioned encapsulated contact material has a disadvantage that the cost is high because expensive Rh or Ru is used. Therefore, an encapsulated contact material in which a Cu-Ni diffusion layer is formed on a Ni-Fe alloy base material has been proposed. However, this material has a disadvantage in terms of cost because it needs to be coated with Rh or Ru, since switching failure occurs between the contacts under high load conditions where arc discharge occurs.
【0004】このようなことから、本発明者等は高負荷
条件でも十分適用できる封入接点材料について鋭意研究
を行い、被覆層のベース金属(Cuなど)にCr、M
n、Fe、Co、Niなどを添加するとアークによる損
傷が分散され、またCやSiなどを添加するとベース金
属の消耗移転が抑えられ、これらにより封入接点の開閉
動作が飛躍的に向上することを見いだし、さらに研究を
進めて本発明を完成させるに至った。本発明は高負荷条
件でも開閉動作が長期間安定してなされ、かつ安価な封
入接点材料、および前記封入接点材料を電極に用いた封
入接点の提供を目的とする。[0004] In view of the above, the present inventors have conducted intensive research on an encapsulated contact material which can be sufficiently applied even under a high load condition, and have found that the base metal (Cu or the like) of the coating layer contains Cr, M, or the like.
Addition of n, Fe, Co, Ni, etc. disperses the damage caused by the arc, and addition of C, Si, etc. suppresses the transfer of wear and tear of the base metal, thereby significantly improving the opening / closing operation of the encapsulated contact. The present inventors have found and conducted further research to complete the present invention. An object of the present invention is to provide an inexpensive encapsulated contact material in which switching operation is performed stably for a long period even under high load conditions, and an encapsulated contact using the encapsulated contact material for an electrode.
【0005】[0005]
【課題を解決するための手段】請求項1記載の発明は、
接点基材上に厚さ0.1μm以上の被覆層が形成され、
前記被覆層が、CuまたはAgのうちの少なくとも1元
素を59at%以上、Cr、Mn、Fe、Co、Niのう
ちの少なくとも1元素を0.5〜40at%、CまたはS
iのうちの少なくとも1元素を0.5〜30at%、O
(酸素)を0〜20at%含み、残部が不可避不純物から
なることを特徴とする封入接点材料である。According to the first aspect of the present invention,
A coating layer having a thickness of 0.1 μm or more is formed on the contact substrate,
The coating layer includes at least 59 at% of at least one element of Cu or Ag, 0.5 to 40 at% of at least one element of Cr, Mn, Fe, Co, and Ni, and C or S.
0.5 to 30 at% of at least one element of i
An encapsulated contact material containing (oxygen) in an amount of 0 to 20 at%, with the balance being unavoidable impurities.
【0006】請求項2記載の発明は、被覆層の厚さ方向
の各合金元素の濃度変動が±5at%以下であることを特
徴とする請求項1記載の封入接点材料である。According to a second aspect of the present invention, there is provided the encapsulated contact material according to the first aspect, wherein a concentration variation of each alloy element in a thickness direction of the coating layer is ± 5 at% or less.
【0007】請求項3記載の発明は、被覆層が組成の異
なる2以上の層からなり、各層が、CuまたはAgのう
ちの少なくとも1元素を59at%以上、Cr、Mn、F
e、Co、Niのうちの少なくとも1元素を0〜40at
%、CまたはSiのうちの少なくとも1元素を0〜30
at%、O(酸素)を0〜20at%含み、残部が不可避不
純物からなることを特徴とする請求項1記載の封入接点
材料である。According to a third aspect of the present invention, the coating layer is composed of two or more layers having different compositions, each layer containing at least one element of Cu or Ag in an amount of at least 59 at%, Cr, Mn, and F.
e, at least one element of Co, Ni is 0 to 40 at.
%, At least one element of C or Si is 0 to 30
2. The encapsulated contact material according to claim 1, wherein the encapsulated contact material contains at% and O (oxygen) in an amount of 0 to 20 at%, with the balance being unavoidable impurities.
【0008】請求項4記載の発明は、被覆層に、Cr、
Mn、Fe、Co、Niのうちの少なくとも1元素が被
覆層の厚さ方向に濃度勾配を有して含まれていることを
特徴とする請求項1、2、3のいずれかに記載の封入接
点材料である。The invention according to claim 4 is that the coating layer contains Cr,
4. The encapsulation according to claim 1, wherein at least one of Mn, Fe, Co, and Ni is contained with a concentration gradient in a thickness direction of the coating layer. It is a contact material.
【0009】請求項5記載の発明は、被覆層に、Cまた
はSiのうちの少なくとも1元素が被覆層の厚さ方向に
濃度勾配を有して含まれていることを特徴とする請求項
1、2、3、4のいずれかに記載の封入接点材料であ
る。According to a fifth aspect of the present invention, the coating layer contains at least one of C and Si with a concentration gradient in the thickness direction of the coating layer. The encapsulated contact material according to any one of 2, 3, and 4.
【0010】請求項6記載の発明は、請求項1、2、
3、4、5のいずれかに記載の封入接点材料を電極に用
いたことを特徴とする封入接点である。[0010] The invention according to claim 6 is based on claims 1 and 2,
An encapsulated contact characterized in that the encapsulated contact material according to any one of 3, 4, and 5 is used for an electrode.
【0011】[0011]
【発明の実施の形態】本発明において、接点基材には、
強度と導電性を有する任意の金属材料が用いられる。例
えば、Fe、Ni、Co、Ni−Fe系合金、Co−F
e−Nb系合金、Co−Fe−V系合金、Fe−Ni−
Al−Ti系合金、Fe−Co−Ni系合金、炭素鋼、
リン青銅、洋白、黄銅、ステンレス鋼、Cu−Ni−S
n系合金、Cu−Ti系合金などが用いられる。本発明
では、接点基材上にNiなどの下地層を設けておくと、
接点基材の被覆層への拡散が抑制され、良好な接点特性
がより長期間安定して得られる。BEST MODE FOR CARRYING OUT THE INVENTION In the present invention, a contact base material includes:
Any metal material having strength and conductivity is used. For example, Fe, Ni, Co, Ni-Fe alloy, Co-F
e-Nb-based alloy, Co-Fe-V-based alloy, Fe-Ni-
Al-Ti alloy, Fe-Co-Ni alloy, carbon steel,
Phosphor bronze, nickel silver, brass, stainless steel, Cu-Ni-S
An n-based alloy, a Cu-Ti-based alloy, or the like is used. In the present invention, if a base layer such as Ni is provided on the contact base material,
Diffusion of the contact base material into the coating layer is suppressed, and good contact characteristics can be stably obtained for a longer period.
【0012】本発明において、被覆層を構成するCuま
たはAgは、被覆層のベースとなる安価な金属元素で、
被覆層に導電性を付与する。その含有量を59at%以上
に規定する理由は、59at%未満では被覆層に要求され
る導電性が十分に得られないためである。In the present invention, Cu or Ag constituting the coating layer is an inexpensive metal element serving as the base of the coating layer.
The coating layer is provided with conductivity. The reason for specifying the content to be at least 59 at% is that if it is less than 59 at%, sufficient conductivity required for the coating layer cannot be obtained.
【0013】Cr、Mn、Fe、Co、Niは、使用中
に発生するアーク放電を接点面全体に分散させて、接点
面の形状損傷に起因する動作不良を改善する。その含有
量を0.5〜40at%に規定する理由は、0.5at%未
満ではその効果が十分に得られず、40at%を超えると
融点が低下して接点の消耗が激しくなるためである。以
後、前記Crなどの諸元素はアーク損傷分散元素と称す
る。[0013] Cr, Mn, Fe, Co, and Ni disperse the arc discharge generated during use over the entire contact surface, thereby improving operation failure due to shape damage of the contact surface. The reason why the content is specified in the range of 0.5 to 40 at% is that if the content is less than 0.5 at%, the effect cannot be sufficiently obtained, and if it exceeds 40 at%, the melting point is lowered and the contact is greatly consumed. . Hereinafter, the various elements such as Cr are referred to as arc damage dispersing elements.
【0014】CまたはSiは高融点元素であり、ベース
金属(Cu、Ag)の消耗や対極への移転を抑える作用
を有する。その含有量を0.5〜30at%に規定する理
由は、0.5at%未満ではその効果が十分に得られず、
30at%を超えると、被覆層が脆くなり、表面が膜状に
剥がれ易くなるためである。以後、CまたはSiは耐溶
融元素と称する。適量のO(酸素)は、被覆層の融点と
硬度を高めて耐消耗性を向上させる。その含有量を0〜
20at%に規定した理由は、20at%を超えると被覆層
がポーラスになり、また脆くなって接点寿命が低下する
ためである。本発明では、被覆層全体の組成を請求項1
記載の範囲に規定する。本発明において、被覆層の厚さ
を0.1μm以上に規定した理由は、0.1μm未満で
は十分な接点寿命が得られないためである。C or Si is a high melting point element and has an effect of suppressing consumption of the base metal (Cu, Ag) and transfer to the counter electrode. The reason for defining the content to be 0.5 to 30 at% is that if the content is less than 0.5 at%, the effect cannot be sufficiently obtained.
If the content exceeds 30 at%, the coating layer becomes brittle, and the surface is easily peeled off in the form of a film. Hereinafter, C or Si is referred to as a melting-resistant element. An appropriate amount of O (oxygen) increases the melting point and hardness of the coating layer to improve wear resistance. Its content is 0
The reason why the content is specified at 20 at% is that if the content exceeds 20 at%, the coating layer becomes porous, becomes brittle, and the contact life is shortened. In the present invention, the composition of the entire coating layer is defined by claim 1.
Defined in the range described. In the present invention, the reason why the thickness of the coating layer is specified to be 0.1 μm or more is that if the thickness is less than 0.1 μm, a sufficient contact life cannot be obtained.
【0015】請求項2記載の発明は、被覆層の各元素の
厚さ方向の濃度のばらつきを低く抑えて、つまり被覆層
を均質化して、接点特性の経時的変動を低減させたもの
である。前記濃度のばらつきは±5at%以下において、
特にその効果が顕著となる。According to a second aspect of the present invention, the variation in the concentration of each element in the coating layer in the thickness direction is suppressed to a low level, that is, the coating layer is homogenized to reduce the variation over time of the contact characteristics. . When the concentration variation is ± 5at% or less,
In particular, the effect is remarkable.
【0016】請求項3記載の発明は、被覆層を組成の異
なる2以上の層により構成したもので、このように層を
2以上にすることにより、たとえば、接点基材側と接点
面側とで組成を適性に選択でき、開閉動作寿命の向上を
効率よく実現できる。According to a third aspect of the present invention, the coating layer is composed of two or more layers having different compositions. By forming two or more layers in this manner, for example, the contact base material side and the contact surface side can be separated. Thus, the composition can be appropriately selected, and the life of the switching operation can be efficiently improved.
【0017】請求項4記載の発明は、アーク損傷分散元
素が、被覆層の厚さ方向に濃度勾配を有している封入接
点材料で、例えば、アーク損傷分散元素の濃度が表面側
で高くなるように勾配を付けたものは、少量のアーク損
傷分散元素でその効果が得られる。またアーク損傷分散
元素の濃度が表面側で低くなるように勾配を付けたもの
は、使用中にアーク損傷分散元素が被覆層表面に徐々に
拡散して、所要量のアーク損傷分散元素が被覆層表面に
長期に渡り保持される。According to a fourth aspect of the present invention, there is provided an encapsulated contact material in which the arc damage dispersing element has a concentration gradient in the thickness direction of the coating layer. For example, the concentration of the arc damage dispersing element increases on the surface side. In the case of such a gradient, the effect can be obtained with a small amount of the arc damage dispersing element. In the case where the concentration of the arc damage dispersing element is reduced so that it is lower on the surface side, the arc damage dispersing element gradually diffuses to the surface of the coating layer during use, and a required amount of the arc damage dispersing element is removed from the coating layer. Long-lasting on the surface.
【0018】請求項5記載の発明は、耐溶融元素が、被
覆層の厚さ方向に濃度勾配を有している封入接点材料
で、例えば、耐溶融元素の濃度が表面側で高くなるよう
に勾配を付けたものは、少量の耐溶融元素で接点間のア
ーク損傷を防止できる。また耐溶融元素の濃度が表面側
で低くなるように勾配を付けたものは、使用中に耐溶融
元素が被覆層表面に徐々に拡散して、所要量の耐溶融元
素が被覆層表面に長期に渡り保持される。アーク損傷分
散元素と耐溶融元素の両方に濃度勾配を付けることによ
り、その効果が一段と向上する。本発明において、被覆
層の形成には、スパッタリング法などの気相成長法が組
成の濃度分布を容易に制御できて好便である。According to a fifth aspect of the present invention, there is provided an encapsulated contact material in which the melting resistant element has a concentration gradient in the thickness direction of the coating layer, for example, such that the concentration of the melting resistant element increases on the surface side. The graded one can prevent arc damage between contacts with a small amount of melting resistant element. In the case where the concentration of the anti-fusing element is graded such that the concentration of the anti-fusing element becomes lower on the surface side, the anti-fusing element gradually diffuses to the surface of the coating layer during use, and the required amount of the anti-fusing element spreads over the surface of the coating layer for a long time. Is held for By imparting a concentration gradient to both the arc damage dispersing element and the melting resistance element, the effect is further improved. In the present invention, a vapor phase growth method such as a sputtering method is convenient for forming the coating layer because the concentration distribution of the composition can be easily controlled.
【0019】請求項6記載の発明は、請求項1、2、
3、4、5のいずれかに記載の封入接点材料を電極に用
いた封入接点で、その電極(接点材料)のアークによる
損傷が少なく、またベース金属の消耗移転が抑制されて
開閉動作が飛躍的に向上した封入接点材料である。The invention according to claim 6 is the invention according to claims 1, 2,
An encapsulated contact using the encapsulated contact material according to any one of 3, 4, and 5 as an electrode, the electrode (contact material) is less damaged by an arc, and the transfer of wear of the base metal is suppressed, so that the opening / closing operation is jumped. It is an encapsulated contact material that has been improved.
【0020】[0020]
【実施例】以下に本発明を実施例により詳細に説明す
る。 (実施例1)Ni−48at%Fe合金板 (1×1×0.2m
m)を接点基材に用い、その上に本発明で規定した組成の
被覆層を形成して封入接点材料を作製した。先ず、前記
接点基材の表面をアセトンで5分間超音波洗浄し、更に
リン酸を用いた電解研磨により洗浄した。次にこの接点
基材を真空チャンバ内にセットし、チャンバ内を2×1
0-4Pa以下まで真空排気したのち、真空ポンプのバル
ブを半開状態にして排気コンダクタンスを小さくしなが
らArガスを導入してチャンバ内を1×10-1Paに安
定させた。次に、接点基材に−400Vの電圧を印加
し、チャンバ内の高周波アンテナから0.2kWの高周
波を発生させ、Arイオンでイオンボンバード処理を行
って接点基材の表面を清浄化した。次にチャンバ内を
0.66PaのArまたはAr+O2 ガス雰囲気とし、
400℃に保持した接点基材表面に被覆層を1層に形成
した。前記被覆層はRFマグネトロンスパッタ法により
形成した。ターゲットにはベース金属元素、耐溶融元
素、アーク損傷分散元素の中からそれぞれ少なくとも1
元素を用いた。O量は雰囲気中の酸素分圧を変えること
により制御した。蒸着レートは種々に変化させた。The present invention will be described below in detail with reference to examples. (Example 1) Ni-48 at% Fe alloy plate (1 x 1 x 0.2 m
m) was used as a contact base material, and a coating layer having the composition specified in the present invention was formed thereon to prepare an encapsulated contact material. First, the surface of the contact substrate was ultrasonically cleaned with acetone for 5 minutes, and further cleaned by electrolytic polishing using phosphoric acid. Next, this contact base material is set in a vacuum chamber, and the inside of the chamber is 2 × 1
After evacuating to 0 -4 Pa or less, the vacuum pump valve was half-opened, and Ar gas was introduced while reducing the exhaust conductance to stabilize the inside of the chamber at 1 × 10 -1 Pa. Next, a voltage of -400 V was applied to the contact base material, a high-frequency power of 0.2 kW was generated from a high-frequency antenna in the chamber, and ion bombardment treatment was performed with Ar ions to clean the surface of the contact base material. Next, the inside of the chamber was set to an atmosphere of Ar or Ar + O 2 gas of 0.66 Pa,
A single coating layer was formed on the surface of the contact substrate held at 400 ° C. The coating layer was formed by an RF magnetron sputtering method. The target is at least one of each of a base metal element, a melting resistance element, and an arc damage dispersing element.
Elements were used. The amount of O was controlled by changing the oxygen partial pressure in the atmosphere. The deposition rate was varied.
【0021】(比較例1)被覆層の組成を本発明の規定
値外とした他は、実施例1と同じ方法により封入接点材
料を作製した。Comparative Example 1 An encapsulated contact material was produced in the same manner as in Example 1, except that the composition of the coating layer was outside the specified range of the present invention.
【0022】このようにして得られた各々の封入接点材
料を電極に用いてN2 ガス封入のリードスイッチを作製
し、これらリードスイッチの接点寿命を室温下で試験し
た。接点寿命は、電極間にアーク放電が発生する高負荷
(100V-0.5A-10Hz)下で、40Ampere Turn の駆動磁界
により開閉動作を反復させ、開閉不良が生じるまでの動
作回数(接点寿命)で現した。試験本数は各10本ずつ
とした。結果を表1、2に示す。Using the thus obtained sealed contact materials as electrodes, N 2 gas-filled reed switches were produced, and the contact life of these reed switches was tested at room temperature. Contact life is high when an arc discharge occurs between electrodes
The switching operation was repeated under a driving magnetic field of 40 Ampere Turn under (100 V-0.5 A-10 Hz), and the number of operations (contact life) until the opening / closing failure occurred was expressed. The number of test pieces was 10 each. The results are shown in Tables 1 and 2.
【0023】[0023]
【表1】 [Table 1]
【0024】[0024]
【表2】 [Table 2]
【0025】表1より明かなように、本発明例品のNo.1
〜15はいずれも接点寿命が長く、かつ非常に安定してい
る。これに対し、表2に示した比較例品では、No.1〜3
は耐溶融元素が含有されていないため、No.4〜6 は損傷
分散元素が含有されていないため、No.7,8は耐溶融元素
のCが多いため、No.9,10 は被覆層の厚さが薄いため、
いずれも平均寿命が低下した。As is clear from Table 1, the sample of the present invention was No. 1
Nos. 15 to 15 have a long contact life and are very stable. On the other hand, in the comparative example products shown in Table 2,
Nos. 4 and 6 contain no damage dispersing element because no melting resistant element is contained, and Nos. 9 and 10 are coating layers because No. 7 and 8 have a large amount of melting resistant element C. Is thin,
In each case, the average life was reduced.
【0026】(実施例2)被覆層を組成の異なる2以上
の層で構成した他は、実施例1と同様な方法で封入接点
材料を作製した。蒸着条件は層毎に変えた。Example 2 An encapsulated contact material was produced in the same manner as in Example 1 except that the coating layer was composed of two or more layers having different compositions. The deposition conditions were changed for each layer.
【0027】(比較例2)被覆層の組成を、本発明の規
定外とした他は、実施例2と同様な方法で封入接点材料
を作製した。Comparative Example 2 An encapsulated contact material was produced in the same manner as in Example 2 except that the composition of the coating layer was outside the range specified in the present invention.
【0028】このようにして得られた各々の封入接点材
料を電極に用いてN2 ガス封入のリードスイッチを作製
し、これらリードスイッチの接点寿命を実施例1と同じ
方法で試験した。開閉不良が生じるまでの動作回数(接
点寿命)を表3、4に示す。Using the thus-obtained sealed contact materials for electrodes, N 2 gas-filled reed switches were produced, and the contact life of these reed switches was tested in the same manner as in Example 1. Tables 3 and 4 show the number of operations (contact life) until a switching failure occurs.
【0029】[0029]
【表3】 [Table 3]
【0030】[0030]
【表4】 [Table 4]
【0031】表3より明らかなように、本発明例品の N
o.16〜22はいずれも接点寿命が長く、しかも被覆層を1
層に形成した実施例1の接点寿命よりさらに長めになっ
ている。これは被覆層を2層に形成したことにより構成
元素の各々の効果がより良好に発現されたためである。
これに対し、表4の比較例品では、 No.11は耐溶融元素
を含有していないため、 No.12は損傷分散元素を含有し
ていないため、 No.13は耐溶融元素と損傷分散元素の両
方を含有していないため、No.14,17は膜厚が薄いため、
No.15,16は耐溶融元素が多いため、いずれも接点寿命が
極端に短く、また寿命のばらつきも大きくなった。As is evident from Table 3, N of the sample of the present invention was
o.16 to 22 have a long contact life and have one coating layer.
The contact life is longer than that of the first embodiment formed in the layer. This is because the effect of each of the constituent elements was better exhibited by forming the coating layer in two layers.
On the other hand, in the comparative example products of Table 4, No. 11 does not contain the melting-resistant element, and No. 12 does not contain the damage-dispersing element. No. 14 and 17 are thin because they do not contain both elements.
In Nos. 15 and 16, the contact life was extremely short and the life variability was large because of the high resistance to melting elements.
【0032】(実施例3)被覆層の組成を厚さ方向に傾
斜させた他は、実施例1と同様な方法で封入接点材料を
作製した。被覆層の形成にあたり各元素のターゲットの
投入パワーは連続的に変化させた。Example 3 An encapsulated contact material was produced in the same manner as in Example 1, except that the composition of the coating layer was inclined in the thickness direction. In forming the coating layer, the input power of the target of each element was continuously changed.
【0033】このようにして得られた各々の封入接点材
料を電極に用いてN2 ガス封入のリードスイッチを作製
し、これらリードスイッチの接点寿命を実施例1と同じ
方法で試験した。開閉不良が生じるまでの動作回数(接
点寿命)を表5に示す。Using the thus-obtained sealed contact materials for electrodes, N 2 gas-filled reed switches were manufactured, and the contact life of these reed switches was tested in the same manner as in Example 1. Table 5 shows the number of operations (contact life) until the opening and closing failure occurs.
【0034】[0034]
【表5】 [Table 5]
【0035】表5より明らかなように、本発明例品の N
o.23〜29はいずれも接点寿命が長く、しかも実施例1、
2の接点寿命よりさらに長めになっている。これは被覆
層の厚さ方向に組成を傾斜させたことにより構成元素の
各々の効果が極めて効率良く発現されたためである。As is apparent from Table 5, the N of the sample of the present invention was
o.23 to 29 have a long contact life, and
2 is longer than the contact life. This is because the effect of each of the constituent elements was extremely efficiently exhibited by inclining the composition in the thickness direction of the coating layer.
【0036】以上、接点サイズの基材上に被覆層を形成
する場合について説明したが、本発明は大型基材上に被
覆層を形成し、これを接点サイズにサイジングして封入
接点材料としても、同様の効果が得られる。Although the case where the coating layer is formed on the substrate having the contact size has been described above, the present invention is also applicable to forming the coating layer on a large substrate and sizing the coating layer to the size of the contact to obtain an encapsulated contact material. The same effect can be obtained.
【0037】本発明の封入接点材料は、封入型リレー、
封入型スイッチなど様々な分野に使用できる。またベー
ス金属のCuまたはAgが大気中の硫化物と反応して接
点特性が劣化しない環境下であれば、大気中で用いる通
常のスイッチにも広く適用できる。The encapsulated contact material of the present invention is an encapsulated relay,
It can be used in various fields such as encapsulated switches. Also, in an environment where Cu or Ag of the base metal does not react with the sulfide in the atmosphere to degrade the contact characteristics, it can be widely applied to ordinary switches used in the atmosphere.
【0038】[0038]
【発明の効果】以上に述べたように、本発明の封入接点
材料は、Cr、Mn、Fe、Co、Niの少なくとも1
元素を含むためアーク損傷が分散され、またCまたはS
iの少なくとも1元素を含むためベース金属(Cu、A
g)の消耗移転が抑えられ、さらにOを含有させること
により耐消耗性が一層向上し、高負荷条件でも良好な接
点寿命が得られる。また高価なRhやRuなどを用いな
いので安価である。前記封入接点材料を電極に用いた封
入接点は安価で接点寿命が長い。依って工業上顕著な効
果を奏する。As described above, the encapsulated contact material of the present invention comprises at least one of Cr, Mn, Fe, Co and Ni.
The arc damage is dispersed due to the inclusion of elements, and C or S
i, the base metal (Cu, A
The transfer of wear of g) is suppressed, and by further containing O, the wear resistance is further improved, and a good contact life can be obtained even under a high load condition. Also, since expensive Rh and Ru are not used, the cost is low. An encapsulated contact using the encapsulated contact material for an electrode is inexpensive and has a long contact life. Therefore, there is an industrially significant effect.
Claims (6)
層が形成され、前記被覆層が、CuまたはAgのうちの
少なくとも1元素を59at%以上、Cr、Mn、Fe、
Co、Niのうちの少なくとも1元素を0.5〜40at
%、CまたはSiのうちの少なくとも1元素を0.5〜
30at%、O(酸素)を0〜20at%含み、残部が不可
避不純物からなることを特徴とする封入接点材料。1. A coating layer having a thickness of 0.1 μm or more is formed on a contact base material, said coating layer containing at least one element of Cu or Ag in an amount of at least 59 at%, Cr, Mn, Fe,
At least one element of Co and Ni is 0.5 to 40 at.
%, At least one element of C or Si is 0.5 to
An encapsulated contact material comprising 30 at%, O (oxygen) in an amount of 0 to 20 at%, and the balance consisting of unavoidable impurities.
動が±5at%以下であることを特徴とする請求項1記載
の封入接点材料。2. The encapsulated contact material according to claim 1, wherein a concentration variation of each alloy element in a thickness direction of the coating layer is ± 5 at% or less.
り、各層が、CuまたはAgのうちの少なくとも1元素
を59at%以上、Cr、Mn、Fe、Co、Niのうち
の少なくとも1元素を0〜40at%、CまたはSiのう
ちの少なくとも1元素を0〜30at%、O(酸素)を0
〜20at%含み、残部が不可避不純物からなることを特
徴とする請求項1記載の封入接点材料。3. The coating layer comprises at least two layers having different compositions, each layer comprising at least 59 at% of at least one element of Cu or Ag and at least one element of Cr, Mn, Fe, Co and Ni. 0 to 40 at%, at least one element of C or Si is 0 to 30 at%, and O (oxygen) is 0
2. The encapsulated contact material according to claim 1, wherein the content of the contact material is in the range of about 20 at% to about 20 at%, with the balance being inevitable impurities.
iのうちの少なくとも1元素が被覆層の厚さ方向に濃度
勾配を有して含まれていることを特徴とする請求項1、
2、3のいずれかに記載の封入接点材料。4. A coating layer comprising Cr, Mn, Fe, Co, N
2. The method according to claim 1, wherein at least one element of i is contained with a concentration gradient in a thickness direction of the coating layer.
4. The encapsulated contact material according to any one of items 2 and 3.
とも1元素が被覆層の厚さ方向に濃度勾配を有して含ま
れていることを特徴とする請求項1、2、3、4のいず
れかに記載の封入接点材料。5. The coating layer according to claim 1, wherein at least one of C and Si is contained with a concentration gradient in a thickness direction of the coating layer. The encapsulated contact material according to any one of the above.
記載の封入接点材料を電極に用いたことを特徴とする封
入接点。6. An encapsulated contact, characterized in that the encapsulated contact material according to any one of claims 1, 2, 3, 4, and 5 is used for an electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9154196A JPH113624A (en) | 1997-06-12 | 1997-06-12 | Encapsulated contact material and encapsulated contact using said material for electrodes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9154196A JPH113624A (en) | 1997-06-12 | 1997-06-12 | Encapsulated contact material and encapsulated contact using said material for electrodes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH113624A true JPH113624A (en) | 1999-01-06 |
Family
ID=15578945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9154196A Pending JPH113624A (en) | 1997-06-12 | 1997-06-12 | Encapsulated contact material and encapsulated contact using said material for electrodes |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH113624A (en) |
-
1997
- 1997-06-12 JP JP9154196A patent/JPH113624A/en active Pending
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