JPH113848A - Semiconductor device manufacturing equipment - Google Patents

Abstract

(57) [Summary] Regarding oxide film removal in photo process pretreatment in semiconductor manufacturing, unify the time from oxide film removal to resist coating, and keep the thickness of natural oxide film constant between wafers and lots. To reduce dimensional variation by maintaining. A time required from removal of an oxide film to application of a resist is unified by incorporating an oxide film removal unit into a resist coating coater, and dimensional variation is reduced by keeping the thickness of a natural oxide film constant between lots. After the substrate is placed in the oxide film removing unit 1 to remove the oxide film, it is placed in the bake plate 2 and dried. Thereafter, the resist coating process is completed by the resist coating coater 3 and the pre-bake plate 4. Each unit is a single-wafer processing.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to removal of an oxide film in a pre-processing of a photo process in semiconductor manufacturing.

[0002]

2. Description of the Related Art Conventionally, removal of an oxide film in a pre-process of a photo process in semiconductor manufacturing has been performed by a single unit separate from a resist coating machine in the next process.

[0003]

However, in the above-mentioned prior art, since the time until the resist coating is different between wafers or lots after removing the oxide film because it is separate from the resist coating apparatus, the "silicon wafer" As shown in Figure 8-5 in Section 8 of "Surface Cleaning Technology", a native oxide film is attached with a different film thickness for each wafer and for each lot.
As described in the above, there is a problem that it causes a dimensional variation. Accordingly, an object of the present invention is to provide a semiconductor manufacturing apparatus which unifies the time required from oxide film removal to resist coating and reduces dimensional variations by keeping the thickness of a natural oxide film constant between wafers or lots. I do.

[0004]

According to a first aspect of the present invention, there is provided a semiconductor manufacturing apparatus having a structure in which a unit for removing an oxide film before applying a resist is incorporated. By using a semiconductor manufacturing apparatus using the above-described means, an oxide film can be removed in-line, so that a natural oxide film is constant between wafers or lots, and the dimensional variation can be reduced. A semiconductor manufacturing apparatus according to a second aspect is characterized in that a dip tank is used as a unit for removing an oxide film before applying a resist. By using a semiconductor manufacturing apparatus using the above-described means, an oxide film can be removed in-line, so that a natural oxide film is constant between wafers or lots, and the dimensional variation can be reduced. An apparatus according to a third aspect is characterized in that a chamber for using anhydrous hydrofluoric acid for removing an oxide film is used in the apparatus according to the first aspect. By using a semiconductor manufacturing apparatus using the above-described means, an oxide film can be removed in-line, so that a natural oxide film is constant between wafers or lots, and the dimensional variation can be reduced. An apparatus according to a fourth aspect is characterized in that a spinner is used for removing an oxide film in the apparatus according to the first aspect. By using a semiconductor manufacturing apparatus using the above-described means, an oxide film can be removed in-line, so that a natural oxide film is constant between wafers or lots, and the dimensional variation can be reduced.

[0005]

Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1) FIGS. 2A and 2B are diagrams showing a configuration of a first embodiment of a semiconductor device manufacturing apparatus according to the present invention. The structure is described as follows.
Denotes an oxide film removing unit, 2 denotes a bake plate, 3 denotes a resist coating coater, and 4 denotes a pre-bake plate. Each unit is a single-wafer processing. Conventionally, there are only 3 resist coating coaters and 4 pre-baked plates, but by incorporating 1 and 2 units before coating,
The removal of the oxide film and the application of the resist can be performed in-line, and the thickness of the oxide film before the application of the resist is constant for each wafer and for each lot because the substrate 9 is subjected to single-wafer processing. In this configuration, HMDS processing may be added before step 3.

(Embodiment 2) FIG. 3 is a diagram showing the configuration of a second embodiment of the semiconductor device manufacturing apparatus according to the second aspect of the present invention. It shows the contents of the oxide film removing unit. Explaining the structure, the oxide film removing unit includes a dip tank 5 containing a hydrofluoric acid aqueous solution and a dip tank 6 containing pure water for rinsing, and all the substrates 9 are processed in a single wafer type. With this configuration, the same operation as in the first embodiment can be obtained.

(Embodiment 3) FIG. 4 is a view showing a configuration of a third embodiment of a semiconductor device manufacturing apparatus according to the third aspect of the present invention. It shows the contents of the oxide film removing unit. To explain the structure, the oxide film removing unit puts anhydrous hydrofluoric acid gas 7 into the chamber containing the wafer, removes the oxide film, rinses with pure water 6 and discharges waste liquid from 8. With this configuration, the same operation as in the first embodiment can be obtained.

(Embodiment 4) FIG. 5 is a view showing the configuration of a fourth embodiment of the semiconductor device manufacturing apparatus according to the fourth aspect of the present invention. It shows the contents of the oxide film removing unit. Explaining the structure, the oxide film removing unit uses a spinner to drop a hydrofluoric acid aqueous solution 5 on a wafer, removes the oxide film, and then rinses with pure water 6. With this configuration, the same operation as in the first embodiment can be obtained.

[0010]

As described above, according to the semiconductor device manufacturing apparatus of the present invention, since the oxide film removing apparatus and the resist coating apparatus for the pre-processing of the photo process are incorporated in-line,
Since there is no time difference between wafers and lots between the removal of the oxide film and the application of the resist, the thickness of the natural oxide film can be kept constant, so that dimensional variations can be reduced.

[Brief description of the drawings]

FIG. 1 shows a native oxide film thickness and a pattern size at that time.

FIG. 2 is a diagram showing a configuration of the present invention.

FIG. 3 is a sectional view showing an embodiment of the oxide film removing unit in FIG. 2;

FIG. 4 is a sectional view showing an embodiment of the oxide film removing unit in FIG. 2;

FIG. 5 is a sectional view showing an embodiment of the oxide film removing unit in FIG. 2;

[Explanation of symbols]

 1. Oxide film removal unit 2. 2. Bake plate Resist coating coater 4. Pre-baked plate 5. Hydrofluoric acid aqueous solution 6. Pure water 7. 7. Hydrofluoric anhydride Waste liquid 9. substrate

Claims (4)

[Claims] An integrated unit for removing an oxide film in a photo process pre-process in semiconductor manufacturing is integrated before a resist coating device to unify the processing time from the pre-process to the resist coating so that the processing time between processed wafers or between lots can be improved. An apparatus for manufacturing a semiconductor device, wherein a dimensional variation is reduced by keeping a natural oxide film constant. 2. A semiconductor device manufacturing apparatus according to claim 1, wherein a dip tank is used for removing an oxide film. 3. An apparatus for manufacturing a semiconductor device according to claim 1, wherein a chamber for using hydrofluoric anhydride for removing an oxide film is used. 4. An apparatus for manufacturing a semiconductor device according to claim 1, wherein a spinner is used for removing an oxide film.