JPH11505377A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH11505377A
JPH11505377A JP9508258A JP50825897A JPH11505377A JP H11505377 A JPH11505377 A JP H11505377A JP 9508258 A JP9508258 A JP 9508258A JP 50825897 A JP50825897 A JP 50825897A JP H11505377 A JPH11505377 A JP H11505377A
Authority
JP
Japan
Prior art keywords
transparent
semiconductor device
semiconductor
switching element
channel region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP9508258A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11505377A5 (2
Inventor
ヨハネス フランシスカス マリア シレセン
パウラス ヴィルヘルムス マリア ブロム
ロナルド マルティン ヴォルフ
ヤコブス ベルナルダス ヒースベルス
Original Assignee
フィリップス エレクトロニクス ネムローゼ フェンノートシャップ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by フィリップス エレクトロニクス ネムローゼ フェンノートシャップ filed Critical フィリップス エレクトロニクス ネムローゼ フェンノートシャップ
Publication of JPH11505377A publication Critical patent/JPH11505377A/ja
Publication of JPH11505377A5 publication Critical patent/JPH11505377A5/ja
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/674Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00Bonding of wafers, substrates or parts of devices
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP9508258A 1995-08-03 1996-07-26 半導体装置 Abandoned JPH11505377A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NL95202117.8 1995-08-03
EP95202117 1995-08-03
PCT/IB1996/000749 WO1997006554A2 (en) 1995-08-03 1996-07-26 Semiconductor device provided with transparent switching element

Publications (2)

Publication Number Publication Date
JPH11505377A true JPH11505377A (ja) 1999-05-18
JPH11505377A5 JPH11505377A5 (2) 2004-08-26

Family

ID=8220544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9508258A Abandoned JPH11505377A (ja) 1995-08-03 1996-07-26 半導体装置

Country Status (6)

Country Link
US (1) US5744864A (2)
EP (1) EP0820644B1 (2)
JP (1) JPH11505377A (2)
KR (1) KR100394896B1 (2)
DE (1) DE69635107D1 (2)
WO (1) WO1997006554A2 (2)

Cited By (1540)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004014982A (ja) * 2002-06-11 2004-01-15 Konica Minolta Holdings Inc 半導体回路および画像表示装置
JP2004103957A (ja) 2002-09-11 2004-04-02 Japan Science & Technology Corp ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
KR100436654B1 (ko) * 1998-11-17 2004-06-22 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 트랜지스터 및 반도체장치
JP2005093974A (ja) * 2003-09-18 2005-04-07 Ind Technol Res Inst 薄膜トランジスタ素子活性層の半導体材料とその製造方法
JP2005183984A (ja) * 2003-12-17 2005-07-07 Hewlett-Packard Development Co Lp トランジスタ素子
JP2006343612A (ja) * 2005-06-10 2006-12-21 Casio Comput Co Ltd 液晶表示装置
JP2006528843A (ja) * 2003-07-25 2006-12-21 ヒューレット−パッカード デベロップメント カンパニー エル.ピー. 三元化合物チャネル層を有する半導体デバイス
WO2007023612A1 (ja) * 2005-08-26 2007-03-01 Konica Minolta Holdings, Inc. 薄膜トランジスタ
JP2007529119A (ja) * 2004-03-12 2007-10-18 ヒューレット−パッカード デベロップメント カンパニー エル.ピー. 複合金属酸化物を含むチャネルを有する半導体デバイス
JP2007529118A (ja) * 2004-03-12 2007-10-18 ヒューレット−パッカード デベロップメント カンパニー エル.ピー. 複合酸化物を含むチャネルを有する半導体デバイス
KR20100088565A (ko) 2009-01-30 2010-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR20100090208A (ko) 2009-02-05 2010-08-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터 및 그 트랜지스터의 제조방법
KR20100090641A (ko) 2009-02-06 2010-08-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR20100092882A (ko) 2009-02-13 2010-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터를 구비한 반도체 장치 및 그 제작 방법
KR20100092885A (ko) 2009-02-13 2010-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터 및 그 트랜지스터를 구비한 반도체 장치 및 그들의 제작 방법
KR20100097053A (ko) 2009-02-25 2010-09-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR20100100636A (ko) 2009-03-06 2010-09-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR20100103414A (ko) 2009-03-13 2010-09-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP2010219538A (ja) 2004-03-12 2010-09-30 Japan Science & Technology Agency アモルファス酸化物薄膜
KR20100108245A (ko) 2009-03-26 2010-10-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR20100108215A (ko) 2009-03-27 2010-10-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치, 표시장치 및 전자기기
KR20100109395A (ko) 2009-03-30 2010-10-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그 제조방법
KR20100110278A (ko) 2009-04-02 2010-10-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR20100113039A (ko) 2009-04-10 2010-10-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
EP2256814A1 (en) 2009-05-29 2010-12-01 Semiconductor Energy Laboratory Co, Ltd. Oxide semiconductor device and method for manufacturing the same
EP2256795A1 (en) 2009-05-29 2010-12-01 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device and manufacturing method thereof
KR20110104057A (ko) 2008-12-19 2011-09-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터의 제작 방법
KR20120007068A (ko) 2009-05-01 2012-01-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US8158974B2 (en) 2007-03-23 2012-04-17 Idemitsu Kosan Co., Ltd. Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor
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US8232552B2 (en) 2007-03-26 2012-07-31 Idemitsu Kosan Co., Ltd. Noncrystalline oxide semiconductor thin film, process for producing the noncrystalline oxide semiconductor thin film, process for producing thin-film transistor, field-effect-transistor, light emitting device, display device, and sputtering target
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DE112011100841T5 (de) 2010-03-08 2013-01-24 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und verfahren zur herstellung der halbleitervorrichtung
US8362478B2 (en) 2009-04-16 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20130051020A (ko) 2009-11-28 2013-05-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR20130091701A (ko) 2009-03-27 2013-08-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2013253325A (ja) * 2013-08-29 2013-12-19 Idemitsu Kosan Co Ltd 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ
US8627170B2 (en) 2005-09-21 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Cyclic redundancy check circuit and semiconductor device having the cyclic redundancy check circuit
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DE69635107D1 (de) 2005-09-29
EP0820644A2 (en) 1998-01-28
EP0820644B1 (en) 2005-08-24
WO1997006554A3 (en) 1997-03-20
WO1997006554A2 (en) 1997-02-20
KR100394896B1 (ko) 2003-11-28
US5744864A (en) 1998-04-28

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