JPH11505610A - 消散的に励起されたルミネセンスを用いた複数の分析対象物質の並列的検出のためのセンサプラットホームおよび方法 - Google Patents
消散的に励起されたルミネセンスを用いた複数の分析対象物質の並列的検出のためのセンサプラットホームおよび方法Info
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- JPH11505610A JPH11505610A JP8533714A JP53371496A JPH11505610A JP H11505610 A JPH11505610 A JP H11505610A JP 8533714 A JP8533714 A JP 8533714A JP 53371496 A JP53371496 A JP 53371496A JP H11505610 A JPH11505610 A JP H11505610A
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- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
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- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
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- G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
- G01N21/7703—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator using reagent-clad optical fibres or optical waveguides
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- Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
- Investigating Or Analysing Biological Materials (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1. 連続した基板と透過性で平面状、無機質の誘電体導波層とを包含するセン サプラットホームであって、 a)前記透過性で無機質の誘電体導波層が少なくとも測定領域において少なくと も2つの導波領域に分割されており、波が導波される領域の有効屈折率が周囲の 領域よりも大きいか、または前記導波層の分割が入射光を吸収するその表面上の 物質により行なわれるという事実により分割されており; b)波動ベクトルの伝搬方向が入射後に維持されるように、前記導波領域がそれ ぞれ1個の入射グレーティングまたは共通の入射グレーティングを備えており; c)適切な場合、前記導波領域がそれぞれ1個の出射グレーティングまたは共通 の出射グレーティングを備えていることを特徴とするセンサプラットホーム。 2. 前記導波領域が独立したストリップ、方形、円、楕円またはチェス盤パタ ーンの形状に配列されていることを特徴とする請求項1に記載のセンサプラット ホーム。 3. 前記導波領域が平行なストリップの形状に配列されていることを特徴とす る請求項2に記載のセンサプラットホーム。 4. 前記導波領域が、一端または両端で接合される平行なストリップの形状に 配列されていることを特徴とする請求項1に記載のセンサプラットホーム。 5. 複数の導波領域への分割が、前記導波領域とその隣接する材料との間の有 効屈折率の変化によって実現され、前記有効屈折率の差が0.2単位よりも大きい ことを特徴とする請求項1に記載のセンサプラットホーム。 6. 複数の導波領域への分割が、導波層表面上の吸収性材料によって実現さ れることを特徴とする請求項1に記載のセンサプラットホーム。 7. 複数の導波領域への分割が、導波層表面上のコロイド状に付着した金属に よって実現されることを特徴とする請求項6に記載のセンサプラットホーム。 8. 複数の導波領域への分割が、導波層表面上のコロイド状に付着した金によ って実現されることを特徴とする請求項7に記載のセンサプラットホーム。 9. 複数の導波領域への分割が、導波層表面上のコロイド状に付着した金属に よって実現され、前記表面が接着促進剤の層により修飾されていることを特徴と する請求項7に記載のセンサプラットホーム。 10. 前記導波領域のストリップ幅が5マイクロメートルないし5ミリメートル であることを特徴とする請求項1に記載のセンサプラットホーム。 11. 前記導波領域のストリップ幅が50マイクロメートルないし1ミリメートル であることを特徴とする請求項10に記載のセンサプラットホーム。 12. ストリップ形状を有する前記個々の導波領域の長さが0.5ないし50mmで あることを特徴とする請求項1に記載のセンサプラットホーム。 13. 前記センサプラットホーム上のストリップの数が2ないし1000であること を特徴とする請求項1に記載のセンサプラットホーム。 14. 前記基板上の前記個々の導波領域が多重検出領域を形成するように配置さ れていることを特徴とする請求項1に記載のセンサプラットホーム。 15. 各多重検出領域が2ないし50の独立した導波領域を包含していることを 特徴とする請求項14に記載のセンサプラットホーム。 16. 前記センサプラットホーム上に2ないし100の多重検出領域を有する請求 項14に記載のセンサプラットホーム。 17. 中央切欠き部(6)を中心として自由に回転可能なディスクの形状を有す る請求項14に記載のセンサプラットホームであって、前記ディスクを励起および 検出用光学装置の下方で前記切欠き部(6)を中心として回転させると複数の多 重検出を連続して実施することができるように、前記センサプラットホーム上に 複数の多重検出領域(4)が接線方向または放射状に配列されていることを特徴 とするセンサプラットホーム。 18. 方形またはストリップの形状を有する請求項14に記載のセンサプラットホ ームであって、前記センサプラットホームを励起および検出用光学装置の下方で 横方向に移動させると複数の多重検出を連続して実施することができるように前 記方形またはストリップ上に多重検出領域(4)が配列されていることを特徴と するセンサプラットホーム。 19. 前記基板がガラス、石英または透過性の熱可塑性プラスチック材料である ことを特徴とする請求項1に記載のセンサプラットホーム。 20. 前記基板がポリカーボネート、ポリイミド、またはポリメタクリル酸メチ ルを包含していることを特徴とする請求項19に記載のセンサプラットホーム。 21. 前記屈折率がすべての導波領域に関して同一であることを特徴とする請求 項1に記載のセンサプラットホーム。 22. 前記導波領域の屈折率が2よりも大きいことを特徴とする請求項1に記 載のセンサプラットホーム。 23. 前記導波領域がTiO2、ZnO、Nb2O5、Ta2O5、HfO2またはZ rO2を包含していることを特徴とする請求項22に記載のセンサプラットホーム 。 24. 前記導波領域がTiO2またはTa2O5を包含していることを特徴とする 請求項23に記載のセンサプラットホーム。 25. 前記導波領域の厚さが40ないし300nmであることを特徴とする請求項1 に記載のセンサプラットホーム。 26. 前記導波領域の厚さが40ないし160nmであることを特徴とする請求項25 に記載のセンサプラットホーム。 27. 前記グレーティングの変調深度が3ないし60nmであることを特徴とする 請求項1に記載のセンサプラットホーム。 28. 前記導波層の厚さに対する変調深度の比が0.5以下であることを特徴とす る請求項1に記載のセンサプラットホーム。 29. 前記導波層の厚さに対する変調深度の比が0.2以下であることを特徴とす る請求項1に記載のセンサプラットホーム。 30. 前記グレーティングの周期が200ないし1000nmであることを特徴とする 請求項1に記載のセンサプラットホーム。 31. a)前記センサプラットホーム上における透過性で平面状、無機質の誘 電体導波領域が、屈折率の少なくとも0.6の増減により測定部に沿って相互に区 分されており、 b)各領域が1個または2個の独立したグレーティングカプラを備えているか、 またはすべての領域全体で1個または2個の共通のグレーティングカプラを備え ており、 c)前記透過性で平面状、無機質の誘電体導波領域における厚さが40ないし160 nm、前記グレーティングの変調深度が3ないし60nm、厚さに対する変調深度 の比が0.5以下であることを特徴とする請求項1に記載のセンサプラットホーム 。 32. 前記導波領域が1つないし3つのモードを導波することを特徴とする請求 項1に記載のセンサプラットホーム。 33. 適切に構成されたマスクの下で、真空状態において、無機質の導波材料を 蒸着することを包含する請求項1に記載のセンサプラットホームの作製方法。 34. 最初のステップにおいて、連続した層を形成するため無機質の導波材料を 蒸着することと、その後、前記の層を機械的なスクラッチング、レーザによる材 料加工、リソグラフィ加工またはプラズマ加工によって個々の導波領域に分割す ることとを包含する請求項1に記載のセンサプラットホームの作製方法。 35. 適切に構成された方式により、コロイド溶液から前記表面上に無機質の吸 収性金属を付着させることを包含する請求項1に記載のセンサプラットホームの 作製方法。 36. 適切に構成された方式により、コロイド溶液から前記表面上に粒子の大き さが少なくとも10nmの金を付着させることを包含する請求項1に記載のセンサ プラットホームの作製方法。 37. 前記粒子の大きさが15ないし35nmであることを特徴とする請求項36に記 載のセンサプラットホームの作製方法。 38. 請求項1に記載の導波領域の表面上に、1以上の同一または異なる分析対 象物質に関する化学的または生化学的認識要素として1以上の特異的結合パート ナーが固定化されていることを特徴とする変形されたセンサプラットホーム。 39. 各導波領域の表面上の前記特異的結合パートナーが相互に物理的に分離さ れていることを特徴とする請求項38に記載の変形されたセンサプラットホーム。 40. 各導波領域の表面に特異的結合パートナーが1種だけ配置されていること を特徴とする請求項38に記載の変形されたセンサプラットホーム。 41. 前記導波領域と前記固定化された特異的結合パートナーとの間に付着促進 層が配置されていることを特徴とする請求項38に記載の変形されたセンサプラッ トホーム。 42. 金のコロイドと共有結合した特異的結合パートナーが前記導波領域上に配 置されており、前記金のコロイドが10nmより小さいことを特徴とする請求項38 に記載の変形されたセンサプラットホーム。 43. 多重流路貫流セルを通じて、溶解させた前記特異的結合パートナーを前記 独立した導波領域にわたって通過させることを包含する請求項38に記載の変形さ れたセンサプラットホームを作製する方法であって、前記多重流路セルの流路が 流体工学的または物理的に分離されていることを特徴とする方法。 44. 溶解させた前記特異的結合パートナーを前記独立した導波領域にスタンプ によって付着させることを包含する請求項38に記載の変形されたセンサプラット ホームを作製する方法。 45. 請求項1または請求項38のいずれかに記載のセンサプラットホームまたは 変形されたセンサプラットホームを用いて1以上のルミネセンスを並列的に決定 する方法であって、1以上の液体試料を前記センサプラットホーム上の1以上の 導波領域と接触させることと、励起光を前記導波領域に入射させることと、励起 光を前記導波領域内に透過させることと、それにより前記試料中の発光物質また は前記導波領域上に固定化された発光物質をエバネッセントフィールド内におい て並列的に励起することと、それにより発生したルミネセンスをオプトエレクト ロニクス装置を用いて測定することとを包含する方法。 46. ルミネセンス励起のために波長が300ないし1100nmのコヒーレント光が 使用されることを特徴とする請求項45に記載の1以上のルミネセンスを並列的に 決定する方法。 47. ルミネセンス励起のために波長が450ないし850nmのレーザ光が使用され ることを特徴とする請求項46に記載の1以上のルミネセンスを並列的に決定する 方法。 48. 機能化された発光染料が、ローダミン;フルオレセイン誘導体;クマリン 誘導体;ジスチリルビフェニル;スチルベン誘導体;フタロシアニン;ナフタロ シアニン;トリス(2,2’−ビピリジル)ルテニウム塩化物、トリス(1,1 0−フェナントロリン)ルテニウム塩化物、トリス(4,7−ジフェニル−1, 10−フェナントロリン)ルテニウム塩化物、ポリピリジル/フェナジン/ルテ ニウム錯体などのポリピリジル/ルテニウム錯体;白金/ポルフィリン錯体;ユ ウロピウムおよびテルビウム錯体;およびシアニン色素からなる部類から選択さ れることを特徴とする請求項45に記載の1以上のルミネセンスを並列的に決定す る方法。 49. 前記発光染料としてフルオレセインイソチオシアナートが使用されること を特徴とする請求項48に記載の1以上のルミネセンスを並列的に決定する方法。 50. 消散的に励起され等方的に放射されたルミネセンスが検出されることを特 徴とする請求項45に記載の方法。 51. 前記導波層内に再結合された前記消散的に励起されたルミネセンスが出射 グレーティングを介して、または前記センサプラットホーム縁部において検出さ れることを特徴とする請求項45に記載の方法。 52. 等方的に放射されたルミネセンスと、再結合されたルミネセンスとの双方 が相互に独立に、しかし同時に検出されることを特徴とする請求項45に記載の方 法。 53. 放射された前記励起光の吸収が同時に判定されることを特徴とする請求項 45に記載の方法。 54. 同一または異なる波長のさまざまなレーザ光源によって前記ルミネセンス が励起されることを特徴とする請求項45に記載の方法。 55. 一列のダイオードレーザによって前記ルミネセンスが励起されることを特 徴とする請求項45に記載の方法。 56. 分析される前記試料が卵黄、血液、血清、血漿または尿であることを特 徴とする請求項45に記載の方法。 57. 分析される前記試料が表面水、土壌または植物の抽出物、または生物学的 プロセスまたは合成プロセスによる酒であることを特徴とする請求項45に記載の 方法。 58. アフィニティセンシングにおける生物学的物質の定量のための、請求項1 または請求項38のいずれかに記載のセンサプラットホームまたは変形されたセン サプラットホームの使用。 59. 抗体または抗原、レセプターまたはリガンド、キレート化剤またはヒスチ ジン標識成分、オリゴヌクレオチド、DNA鎖またはRNA鎖、DNAまたはR NAのアナログ、酵素、酵素基質、酵素補因子または酵素阻害剤、レクチンおよ び炭水化物の定量のための、請求項1または請求項38のいずれかに記載のセンサ プラットホームまたは変形されたセンサプラットホームの使用。 60. 光学的に不透明な流体における発光成分の選択的定量のための、請求項1 または請求項38のいずれかに記載のセンサプラットホームまたは変形されたセン サプラットホームの使用。
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| CH1396/95-0 | 1995-05-12 | ||
| PCT/EP1996/001817 WO1996035940A1 (en) | 1995-05-12 | 1996-05-02 | Sensor platform and method for the parallel detection of a plurality of analytes using evanescently excited luminescence |
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| JP2005204071A Pending JP2005338098A (ja) | 1995-05-12 | 2005-07-13 | 消散的に励起されたルミネセンスを用いた複数の分析対象物質の並列的検出のためのセンサプラットホームおよび方法 |
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| WO2024249362A1 (en) * | 2023-06-01 | 2024-12-05 | The Regents Of The University Of California | Rare antibody phage isolation and discrimination (rapid) biological panning |
| EP4621387A3 (en) * | 2024-03-20 | 2025-11-12 | Hand Held Products, Inc. | Method for functionalizing a sample channel in a waveguide |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5163118A (en) * | 1986-11-10 | 1992-11-10 | The United States Of America As Represented By The Secretary Of The Air Force | Lattice mismatched hetrostructure optical waveguide |
| US5165005A (en) * | 1988-01-29 | 1992-11-17 | Fiberchem Inc. | Planar and other waveguide refractive index sensors using metal cladding |
| GB8807486D0 (en) * | 1988-03-29 | 1988-05-05 | Ares Serono Res & Dev Ltd | Waveguide sensor |
| US5082629A (en) * | 1989-12-29 | 1992-01-21 | The Board Of The University Of Washington | Thin-film spectroscopic sensor |
| US5512492A (en) * | 1993-05-18 | 1996-04-30 | University Of Utah Research Foundation | Waveguide immunosensor with coating chemistry providing enhanced sensitivity |
| GB9314991D0 (en) * | 1993-07-20 | 1993-09-01 | Sandoz Ltd | Mechanical device |
| CN1149335A (zh) * | 1994-05-27 | 1997-05-07 | 希巴-盖吉股份公司 | 探测短暂受激发光的方法 |
-
1996
- 1996-05-02 TW TW085105240A patent/TW302435B/zh active
- 1996-05-02 AT AT96914164T patent/ATE377751T1/de not_active IP Right Cessation
- 1996-05-02 MX MX9708698A patent/MX9708698A/es unknown
- 1996-05-02 JP JP8533714A patent/JPH11505610A/ja active Pending
- 1996-05-02 CA CA002219769A patent/CA2219769A1/en not_active Abandoned
- 1996-05-02 WO PCT/EP1996/001817 patent/WO1996035940A1/en not_active Ceased
- 1996-05-02 US US08/945,588 patent/US6078705A/en not_active Expired - Lifetime
- 1996-05-02 AU AU57632/96A patent/AU5763296A/en not_active Abandoned
- 1996-05-02 PL PL96323257A patent/PL323257A1/xx unknown
- 1996-05-02 DE DE69637315T patent/DE69637315T2/de not_active Expired - Lifetime
- 1996-05-02 KR KR1019970708051A patent/KR19990014709A/ko not_active Withdrawn
- 1996-05-02 EP EP07118702A patent/EP1890130A3/en not_active Withdrawn
- 1996-05-02 BR BR9608503A patent/BR9608503A/pt not_active Application Discontinuation
- 1996-05-02 EP EP96914164A patent/EP0824684B1/en not_active Expired - Lifetime
- 1996-05-10 IL IL11821796A patent/IL118217A0/xx unknown
- 1996-05-10 ZA ZA963731A patent/ZA963731B/xx unknown
-
2000
- 2000-01-19 US US09/487,560 patent/US6289144B1/en not_active Expired - Lifetime
-
2005
- 2005-07-13 JP JP2005204071A patent/JP2005338098A/ja active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003503732A (ja) * | 1999-07-05 | 2003-01-28 | ノバルティス アクチエンゲゼルシャフト | センサープラットホーム、そのプラットホームを組み込んだ器具、およびそのプラットホームを使用する方法 |
| JP2003527580A (ja) * | 1999-12-17 | 2003-09-16 | ツェプトゼンス アクチエンゲゼルシャフト | フローセル配列及び多重分析対象物測定のためのその利用 |
| JP2004510130A (ja) * | 2000-06-02 | 2004-04-02 | ツェプトゼンス アクチエンゲゼルシャフト | 多分析対象物測定のためのキット及び方法 |
| JP2002365210A (ja) * | 2001-06-11 | 2002-12-18 | Hitachi Ltd | 生体分子検出方法 |
| WO2008075578A1 (ja) * | 2006-12-19 | 2008-06-26 | Omron Corporation | 表面プラズモンセンサ |
| JP2009133836A (ja) * | 2007-11-06 | 2009-06-18 | Toshiba Corp | 光学式センサ |
| JP2018040700A (ja) * | 2016-09-08 | 2018-03-15 | 株式会社日立ハイテクノロジーズ | 自動分析装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| ZA963731B (en) | 1996-11-12 |
| EP0824684B1 (en) | 2007-11-07 |
| US6078705A (en) | 2000-06-20 |
| ATE377751T1 (de) | 2007-11-15 |
| KR19990014709A (ko) | 1999-02-25 |
| AU5763296A (en) | 1996-11-29 |
| WO1996035940A1 (en) | 1996-11-14 |
| US6289144B1 (en) | 2001-09-11 |
| PL323257A1 (en) | 1998-03-16 |
| EP1890130A3 (en) | 2008-02-27 |
| DE69637315D1 (de) | 2007-12-20 |
| EP1890130A2 (en) | 2008-02-20 |
| BR9608503A (pt) | 1999-07-06 |
| MX9708698A (es) | 1998-02-28 |
| EP0824684A1 (en) | 1998-02-25 |
| CA2219769A1 (en) | 1996-11-14 |
| DE69637315T2 (de) | 2008-08-28 |
| IL118217A0 (en) | 1996-09-12 |
| TW302435B (ja) | 1997-04-11 |
| JP2005338098A (ja) | 2005-12-08 |
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