JPH11511293A - 基板および配線層を備え、基板と配線層との間にバッファ層を有する集積回路 - Google Patents

基板および配線層を備え、基板と配線層との間にバッファ層を有する集積回路

Info

Publication number
JPH11511293A
JPH11511293A JP9501501A JP50150197A JPH11511293A JP H11511293 A JPH11511293 A JP H11511293A JP 9501501 A JP9501501 A JP 9501501A JP 50150197 A JP50150197 A JP 50150197A JP H11511293 A JPH11511293 A JP H11511293A
Authority
JP
Japan
Prior art keywords
layer
metal
precursor
substrate
layered superlattice
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP9501501A
Other languages
English (en)
Japanese (ja)
Inventor
正道 吾妻
デ アラウジョ，カルロス エイ． パス
ディー． クチアロ，ジョセフ
Original Assignee
サイメトリックス コーポレイション
松下電子工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by サイメトリックス コーポレイション, 松下電子工業株式会社 filed Critical サイメトリックス コーポレイション
Publication of JPH11511293A publication Critical patent/JPH11511293A/ja
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4432—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

Landscapes

  • Inorganic Compounds Of Heavy Metals (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP9501501A 1995-06-07 1996-06-06 基板および配線層を備え、基板と配線層との間にバッファ層を有する集積回路 Ceased JPH11511293A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US47343295A 1995-06-07 1995-06-07
US08/473,432 1995-06-07
PCT/US1996/009100 WO1996041375A1 (fr) 1995-06-07 1996-06-06 Circuit integre comportant un substrat et une couche de cablage separes par une couche intermediaire

Publications (1)

Publication Number Publication Date
JPH11511293A true JPH11511293A (ja) 1999-09-28

Family

ID=23879500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9501501A Ceased JPH11511293A (ja) 1995-06-07 1996-06-06 基板および配線層を備え、基板と配線層との間にバッファ層を有する集積回路

Country Status (7)

Country Link
EP (1) EP0834196A1 (fr)
JP (1) JPH11511293A (fr)
KR (1) KR100333234B1 (fr)
CN (1) CN1199506A (fr)
CA (1) CA2223106A1 (fr)
TW (1) TW347577B (fr)
WO (1) WO1996041375A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004077463A1 (fr) * 2003-02-26 2004-09-10 Tdk Corporation Unite multicouche contenant une couche d'electrode et une couche dielectrique

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3108039B2 (ja) * 1997-01-18 2000-11-13 東京応化工業株式会社 Ｂｉ系強誘電体薄膜形成用塗布液およびこれを用いて形成した強誘電体薄膜、強誘電体メモリ
JP3195265B2 (ja) * 1997-01-18 2001-08-06 東京応化工業株式会社 Ｂｉ系強誘電体薄膜形成用塗布液およびこれを用いて形成した強誘電体薄膜、強誘電体メモリ
US6104049A (en) * 1997-03-03 2000-08-15 Symetrix Corporation Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same
JPH10313097A (ja) * 1997-05-13 1998-11-24 Sharp Corp 強誘電体薄膜、製造方法及び強誘電体薄膜を含んでなる素子
US6133092A (en) * 1998-07-24 2000-10-17 Symetrix Corporation Low temperature process for fabricating layered superlattice materials and making electronic devices including same
KR100293720B1 (ko) * 1998-10-01 2001-07-12 박종섭 반도체 소자의 캐패시터 형성 방법
US6399521B1 (en) * 1999-05-21 2002-06-04 Sharp Laboratories Of America, Inc. Composite iridium barrier structure with oxidized refractory metal companion barrier and method for same
US6190963B1 (en) * 1999-05-21 2001-02-20 Sharp Laboratories Of America, Inc. Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier and method for same
US6420740B1 (en) * 1999-05-24 2002-07-16 Sharp Laboratories Of America, Inc. Lead germanate ferroelectric structure with multi-layered electrode
WO2008156224A1 (fr) * 2007-06-18 2008-12-24 Min A Lee Structure laminée dotée d'une fine pellicule métallique à haute résistance présentant une durabilité et une fiabilité améliorées et son procédé de façonnage
CN101810047A (zh) 2007-09-27 2010-08-18 交互数字专利控股公司 为在增强型rach中发送消息部分而分配无线电资源的方法及设备

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5046043A (en) * 1987-10-08 1991-09-03 National Semiconductor Corporation Ferroelectric capacitor and memory cell including barrier and isolation layers
EP0415751B1 (fr) * 1989-08-30 1995-03-15 Nec Corporation Condensateur à couche mince et son procédé de fabrication
US5423285A (en) * 1991-02-25 1995-06-13 Olympus Optical Co., Ltd. Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications
US5164808A (en) * 1991-08-09 1992-11-17 Radiant Technologies Platinum electrode structure for use in conjunction with ferroelectric materials
US5270298A (en) * 1992-03-05 1993-12-14 Bell Communications Research, Inc. Cubic metal oxide thin film epitaxially grown on silicon
US5248564A (en) * 1992-12-09 1993-09-28 Bell Communications Research, Inc. C-axis perovskite thin films grown on silicon dioxide
US5387459A (en) * 1992-12-17 1995-02-07 Eastman Kodak Company Multilayer structure having an epitaxial metal electrode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004077463A1 (fr) * 2003-02-26 2004-09-10 Tdk Corporation Unite multicouche contenant une couche d'electrode et une couche dielectrique

Also Published As

Publication number Publication date
CA2223106A1 (fr) 1996-12-19
KR100333234B1 (ko) 2002-06-20
KR19990022075A (ko) 1999-03-25
CN1199506A (zh) 1998-11-18
TW347577B (en) 1998-12-11
WO1996041375A1 (fr) 1996-12-19
EP0834196A1 (fr) 1998-04-08

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