JPH1154366A - Capacitor and its manufacture - Google Patents
Capacitor and its manufactureInfo
- Publication number
- JPH1154366A JPH1154366A JP22080097A JP22080097A JPH1154366A JP H1154366 A JPH1154366 A JP H1154366A JP 22080097 A JP22080097 A JP 22080097A JP 22080097 A JP22080097 A JP 22080097A JP H1154366 A JPH1154366 A JP H1154366A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- dielectric film
- film
- dielectric
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000007751 thermal spraying Methods 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 238000007639 printing Methods 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 239000000843 powder Substances 0.000 abstract description 12
- 229910002113 barium titanate Inorganic materials 0.000 abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- 229910018274 Cu2 O Inorganic materials 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 46
- 239000010949 copper Substances 0.000 description 8
- 239000004020 conductor Substances 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、電極間に誘電体
膜が形成されたキャパシタとその製造方法に関する。[0001] 1. Field of the Invention [0002] The present invention relates to a capacitor having a dielectric film formed between electrodes and a method of manufacturing the capacitor.
【０００２】[0002]
【従来の技術】従来、比較的小型のキャパシタに使用さ
れる低温焼き付け型のチタン酸バリウム（ＢａＴｉ
Ｏ3）等の誘電体膜は、ＢａＴｉＯ3の粉末をシアノレジ
ンやフェノール等の有機樹脂や、シリコン樹脂等のバイ
ンダにより固めて、電極間に設けていた。また、ＢａＴ
ｉＯ3等の誘電体の粉末の表面に、金属の導電体を部分
的に付着させ、この導電体同士が隣接する誘電体の粉末
粒子間で接合するとともに、表裏面の間では短絡しない
ように上記誘電体粉末粒子上に上記導電体が形成されて
いる誘電体膜も本願出願人により提案されている。2. Description of the Related Art Conventionally, low-temperature baking type barium titanate (BaTi) used for relatively small-sized capacitors has been used.
The dielectric film such as O 3 ) is provided between the electrodes by solidifying BaTiO 3 powder with a binder such as an organic resin such as cyanoresin or phenol or a silicone resin. Also, BaT
A metal conductor is partially adhered to the surface of a dielectric powder such as iO 3 , and the conductors are bonded to each other between adjacent dielectric powder particles so that a short circuit does not occur between the front and back surfaces. The applicant has also proposed a dielectric film in which the conductor is formed on the dielectric powder particles.
【０００３】[0003]
【発明が解決しようとする課題】上記従来の技術の前者
の場合、ＢａＴｉＯ3の粉末を樹脂バインダで焼きつけ
ているため、誘電体膜としての誘電率がε＝５０程度と
ＢａＴｉＯ3のバルクの誘電率ε＝３０００に比べて著
しく低いという問題があった。In the former case of the above prior art, since the BaTiO 3 powder is baked with a resin binder, the dielectric constant of the dielectric film is about ε = 50 and the bulk dielectric of BaTiO 3 is about ε = 50. There was a problem that the ratio was significantly lower than the ratio ε = 3000.
【０００４】また、上記従来の技術の後者の場合、Ｂａ
ＴｉＯ3の粉末を金属のバインダで接合し、比較的誘電
率の高い誘電体薄膜を形成するものではあるが、未だＢ
ａＴｉＯ3のバルクの誘電率ε＝３０００に比べて低い
という問題があった。In the latter case of the above-mentioned conventional technology, Ba is used.
Although a TiO 3 powder is bonded with a metal binder to form a dielectric thin film having a relatively high dielectric constant, B
There is a problem that the bulk dielectric constant of aTiO 3 is lower than ε = 3000.
【０００５】この発明は、上記従来の技術の問題点に鑑
みてなされたもので、誘電体粉末から製造することがで
き、きわめて高い誘電率を得ることができるキャパシタ
とその製造方法を提供することを目的とする。The present invention has been made in view of the above-mentioned problems of the prior art, and provides a capacitor which can be manufactured from a dielectric powder and can obtain an extremely high dielectric constant, and a method of manufacturing the same. With the goal.
【０００６】[0006]
【課題を解決するための手段】この発明は、銅等の一方
の電極表面に、Ｃｕ2Ｏ等の酸化膜を形成し、その上に
ＢａＴｉＯ3等の誘電体膜が溶射により形成されている
キャパシタである。上記電極と酸化膜との間に金（Ａ
ｕ）等のバッファ層を形成したものである。According to the present invention, an oxide film such as Cu 2 O is formed on one electrode surface such as copper, and a dielectric film such as BaTiO 3 is formed thereon by thermal spraying. It is a capacitor. Gold (A) is placed between the electrode and the oxide film.
u) and other buffer layers.
【０００７】さらにこの発明は、上記一方の電極の対向
電極が、導電性ペーストを印刷または塗布してなるもの
である。この導電性ペーストは、Ａｇ／Ｐｄ，Ｃｕ，Ｎ
ｉ，Ａｕ等の金属粒子を樹脂中に分散させてなるもので
ある。さらに、上記対向電極は、溶射によるＴｉ膜を介
して上記導電性ペーストによる電極が形成されたもので
ある。Further, in the present invention, the counter electrode of the one electrode is formed by printing or applying a conductive paste. This conductive paste is made of Ag / Pd, Cu, N
Metal particles such as i and Au are dispersed in a resin. Further, the counter electrode is formed by forming an electrode of the conductive paste through a Ti film formed by thermal spraying.
【０００８】またこの発明は、銅等の一方の電極表面に
Ｃｕ2Ｏ等の酸化膜を形成し、その上にＢａＴｉＯ3等の
誘電体膜を溶射により形成するキャパシタの製造方法で
ある。上記電極の表面にＡｕ等のバッファ層を形成し、
その後、酸化膜を形成し、誘電体膜を溶射するものであ
る。Further, the present invention is a method for manufacturing a capacitor in which an oxide film such as Cu 2 O is formed on one electrode surface of copper or the like, and a dielectric film such as BaTiO 3 is formed thereon by thermal spraying. Forming a buffer layer such as Au on the surface of the electrode;
Thereafter, an oxide film is formed, and the dielectric film is thermally sprayed.
【０００９】さらにこの発明は、上記誘電体膜を形成
後、その誘電体膜表面に導電性ペーストを印刷または塗
布して、上記一方の電極の対向電極を形成するキャパシ
タの製造方法である。また、上記誘電体膜を形成後、そ
の誘電体膜表面に溶射によるＴｉ膜を形成し、その表面
を研磨して、その研磨したＴｉ膜表面に導電性ペースト
を印刷または塗布して上記一方の電極の対向電極を形成
するキャパシタの製造方法である。Further, the present invention is a method for manufacturing a capacitor, wherein after forming the dielectric film, a conductive paste is printed or applied on the surface of the dielectric film to form a counter electrode of the one electrode. Further, after forming the dielectric film, a Ti film is formed on the surface of the dielectric film by thermal spraying, the surface is polished, and a conductive paste is printed or applied on the polished Ti film surface to form the one of the above-mentioned one. This is a method for manufacturing a capacitor for forming a counter electrode of an electrode.
【００１０】[0010]
【発明の実施の形態】以下この発明の実施の形態につい
て図面に基づいて説明する。図１はこの発明の第一実施
形態を示し、この実施形態のキャパシタは、銅箔等の電
極１０の表面に、ＢａＴｉＯ3の誘電体膜１２が溶射に
より形成されているものである。電極１０と誘電体膜１
２間には、Ｃｕ2Ｏの酸化膜１４が形成され、溶射され
たＢａＴｉＯ3の誘電体膜１２との接合強度を高めてい
る。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a first embodiment of the present invention. A capacitor according to this embodiment has a dielectric film 12 of BaTiO 3 formed on a surface of an electrode 10 such as a copper foil by thermal spraying. Electrode 10 and dielectric film 1
An oxide film 14 of Cu 2 O is formed between the two to enhance the bonding strength with the dielectric film 12 of sprayed BaTiO 3 .
【００１１】この実施形態のキャパシタの製造方法は、
一方の電極１０の表面にＣｕ2Ｏ等の酸化膜１４が形成
されるように、溶射雰囲気の酸素分圧を調整する。その
状態でＢａＴｉＯ3の誘電体膜１２の溶射を行う。溶射
は、溶射ガン１６によりＢａＴｉＯ3の粉末を３０００
℃〜４０００℃の温度で溶融し噴射する。これにより、
電極１０の表面には、ＣｕＯによる酸化膜が形成され、
溶射された誘電体膜１２が強固に電極１０に酸化膜１４
を介して接合する。The method for manufacturing the capacitor of this embodiment is as follows.
The oxygen partial pressure of the spraying atmosphere is adjusted so that an oxide film 14 such as Cu 2 O is formed on the surface of one electrode 10. In this state, thermal spraying of the BaTiO 3 dielectric film 12 is performed. The thermal spraying is performed by spraying BaTiO 3 powder by the thermal spray gun 16 to 3000.
It is melted and sprayed at a temperature of from 4000 to 4000C. This allows
An oxide film of CuO is formed on the surface of the electrode 10,
The sprayed dielectric film 12 is firmly formed on the electrode 10 by the oxide film 14.
To join.
【００１２】この実施形態のキャパシタによれば、電極
１０の表面に溶射により誘電体膜１２を形成する際に、
電極１０の表面に酸化膜１４を形成して誘電体膜１２を
形成したので、誘電体膜の接合強度が高く、しかも誘電
体１２はＢａＴｉＯ3の粉末を溶射により噴射している
ので、電極１０に密に溶融して付着し、その誘電率はＢ
ａＴｉＯ3ののバルクに近いものとなる。According to the capacitor of this embodiment, when the dielectric film 12 is formed on the surface of the electrode 10 by thermal spraying,
Since the dielectric film 12 is formed by forming the oxide film 14 on the surface of the electrode 10, the bonding strength of the dielectric film is high, and the dielectric 12 is sprayed with BaTiO 3 powder by thermal spraying. Is melted and adhered densely, and its dielectric constant is B
It is close to the bulk of aTiO 3 .
【００１３】次にこの発明のキャパシタとその製造方法
の第二実施形態について図２を基にして説明する。ここ
で、上述の実施形態と同様の部材は同一符号を付して説
明を省略する。この実施形態のキャパシタは、電極１０
の表面にＡｕのバッファ層１８を形成し、このバッファ
層１８の表面に、酸化膜１４を形成したものである。Next, a second embodiment of the capacitor and the method of manufacturing the same according to the present invention will be described with reference to FIG. Here, the same members as those in the above-described embodiment are denoted by the same reference numerals, and description thereof will be omitted. The capacitor of this embodiment includes the electrode 10
A buffer layer 18 of Au is formed on the surface of the substrate, and an oxide film 14 is formed on the surface of the buffer layer 18.
【００１４】この実施形態によれば、電極１０と誘電体
膜１２の界面の状態により、誘電損失角δによるｔａｎ
δが大きくなる場合も、バッファ層１８により誘電損失
角のｔａｎδを小さくすることができる。According to this embodiment, depending on the state of the interface between the electrode 10 and the dielectric film 12, the tan based on the dielectric loss angle δ
Even when δ increases, the buffer layer 18 can reduce tan δ of the dielectric loss angle.
【００１５】次にこの発明のキャパシタとその製造方法
の第三実施形態について図３を基にして説明する。ここ
で、上述の実施形態と同様の部材は同一符号を付して説
明を省略する。この実施形態のキャパシタは、電極１０
の対向電極２０が、導電性ペースト２０を印刷または塗
布してなるものである。この導電性ペースト２０は、Ａ
ｇ／Ｐｄ，Ｃｕ，Ｎｉ，Ａｕ等の金属粒子を樹脂中に分
散させたもので、印刷または塗布後焼成してなる。Next, a third embodiment of the capacitor of the present invention and its manufacturing method will be described with reference to FIG. Here, the same members as those in the above-described embodiment are denoted by the same reference numerals, and description thereof will be omitted. The capacitor of this embodiment includes the electrode 10
Is formed by printing or applying the conductive paste 20. This conductive paste 20 is made of A
It is made by dispersing metal particles such as g / Pd, Cu, Ni, and Au in a resin, and is printed or coated and then fired.
【００１６】この実施形態によれば、対向電極２０の形
成が容易であり、小型で容量の大きいキャパシタが可能
となる。According to this embodiment, the formation of the counter electrode 20 is easy, and a small-sized and large-capacity capacitor can be realized.
【００１７】次にこの発明のキャパシタとその製造方法
の第四実施形態について図４を基にして説明する。ここ
で、上述の実施形態と同様の部材は同一符号を付して説
明を省略する。この実施形態のキャパシタは、電極１０
の対向電極２０は、誘電体膜１２と導電性ペースト２０
の間に、溶射によるＴｉ膜２２を介したものである。Ｔ
ｉ膜２２は、溶射後表面を研磨して鏡面にされたもので
あり、その表面に対向電極２０が印刷、または塗布され
る。Next, a fourth embodiment of the capacitor of the present invention and a method for manufacturing the same will be described with reference to FIG. Here, the same members as those in the above-described embodiment are denoted by the same reference numerals, and description thereof will be omitted. The capacitor of this embodiment includes the electrode 10
The opposing electrode 20 is composed of the dielectric film 12 and the conductive paste 20.
And a Ti film 22 formed by thermal spraying. T
The i-film 22 has a mirror-polished surface after thermal spraying, and the counter electrode 20 is printed or applied to the surface.
【００１８】この実施形態によれば、対向電極２０の形
成が容易であり、しかも小型でより容量の大きいキャパ
シタが可能となる。According to this embodiment, the counter electrode 20 can be easily formed, and a small-sized and large-capacity capacitor can be obtained.
【００１９】なお、この発明の誘電体膜の導電体は、Ｐ
ｂ−Ｓｎ、Ｓｎ−Ａｇ等、任意に選択可能なものであ
る。また、誘電体膜や電極の材料は適宜選択可能なもの
である。The conductor of the dielectric film of the present invention is P
It can be arbitrarily selected such as b-Sn or Sn-Ag. Further, the materials of the dielectric film and the electrode can be appropriately selected.
【００２０】[0020]
【発明の効果】この発明のキャパシタとその製造方法
は、誘電体の粉を元に形成した薄膜の誘電体膜であって
も誘電率が高く、製造も容易なものである。これによ
り、誘電体の粉体から形成した誘電体膜を、より広くキ
ャパシタの用途に利用することができる。The capacitor and the method of manufacturing the same according to the present invention have a high dielectric constant and are easy to manufacture even if they are thin dielectric films formed based on dielectric powder. Thus, the dielectric film formed from the dielectric powder can be more widely used for a capacitor.
【図１】この発明の誘電体膜の第一実施形態を用いたキ
ャパシタの模式的断面図である。FIG. 1 is a schematic sectional view of a capacitor using a first embodiment of a dielectric film of the present invention.
【図２】この発明の誘電体膜の第二実施形態を用いたキ
ャパシタの模式的断面図である。FIG. 2 is a schematic sectional view of a capacitor using a second embodiment of the dielectric film of the present invention.
【図３】この発明の誘電体膜の第三実施形態を用いたキ
ャパシタの模式的断面図である。FIG. 3 is a schematic sectional view of a capacitor using a third embodiment of the dielectric film of the present invention.
【図４】この発明の誘電体膜の第四実施形態を用いたキ
ャパシタの模式的断面図である。FIG. 4 is a schematic sectional view of a capacitor using a fourth embodiment of the dielectric film of the present invention.
１０ 電極 １２ 導電体膜 １４ 酸化膜 １６ 溶射ガン DESCRIPTION OF SYMBOLS 10 Electrode 12 Conductor film 14 Oxide film 16 Thermal spray gun
───────────────────────────────────────────────────── フロントページの続き (72)発明者 小原 陽三 富山県上新川郡大沢野町下大久保3158番地 北陸電気工業株式会社内 (72)発明者 石山 一郎 富山県上新川郡大沢野町下大久保3158番地 北陸電気工業株式会社内 (72)発明者 山崎 盛勝 富山県上新川郡大沢野町下大久保3158番地 北陸電気工業株式会社内 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Yozo Ohara 3158 Shimo-Okubo, Osawano-cho, Kamishinkawa-gun, Toyama Prefecture Inside Hokuriku Electric Industry Co., Ltd. Incorporated (72) Inventor Morikatsu Yamazaki 3158 Shimookubo, Osawano-cho, Kamishinkawa-gun, Toyama Prefecture Hokuriku Electric Industry Co., Ltd.
Claims (7)
形成し、その上に誘電体膜が溶射により形成されている
キャパシタ。1. A capacitor having an electrode metal oxide film formed on one electrode surface and a dielectric film formed thereon by thermal spraying.
ァ層を形成した請求項１記載のキャパシタ。2. A capacitor according to claim 1, wherein a metal buffer layer is formed between said electrode and said oxide film.
ーストによるものである請求項１記載のキャパシタ。3. The capacitor according to claim 1, wherein the counter electrode of said one electrode is made of a conductive paste.
して上記導電性ペーストによる電極が形成されたもので
ある請求項１記載のキャパシタ。4. The capacitor according to claim 1, wherein said counter electrode is formed by forming an electrode of said conductive paste via a Ti film formed by thermal spraying.
成し、その上に誘電体膜を溶射により形成するキャパシ
タの製造方法。5. A method for manufacturing a capacitor, comprising: forming an oxide film of an electrode metal on one electrode surface; and forming a dielectric film thereon by thermal spraying.
面に導電性ペーストを設け、上記一方の電極の対向電極
を形成する請求項５記載のキャパシタの製造方法。6. The method of manufacturing a capacitor according to claim 5, wherein after forming the dielectric film, a conductive paste is provided on the surface of the dielectric film to form a counter electrode of the one electrode.
面に溶射によるＴｉ膜を形成し、その表面を研磨して、
その研磨したＴｉ膜表面に導電性ペーストを印刷または
塗布して上記一方の電極の対向電極を形成する請求項６
記載のキャパシタの製造方法。7. After forming the dielectric film, a Ti film is formed on the surface of the dielectric film by thermal spraying, and the surface is polished.
7. A counter electrode of said one electrode is formed by printing or applying a conductive paste on the polished Ti film surface.
A method for manufacturing the capacitor according to the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22080097A JPH1154366A (en) | 1997-07-31 | 1997-07-31 | Capacitor and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22080097A JPH1154366A (en) | 1997-07-31 | 1997-07-31 | Capacitor and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1154366A true JPH1154366A (en) | 1999-02-26 |
Family
ID=16756768
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22080097A Pending JPH1154366A (en) | 1997-07-31 | 1997-07-31 | Capacitor and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1154366A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007329189A (en) * | 2006-06-06 | 2007-12-20 | Tdk Corp | Thin-film capacitor, and manufacturing method thereof |
| JP2008258535A (en) * | 2007-04-09 | 2008-10-23 | Choshu Industry Co Ltd | Manufacturing method of multilayer capacitor |
| JP2010087507A (en) * | 2008-09-30 | 2010-04-15 | General Electric Co <Ge> | Film capacitor |
| WO2011118308A1 (en) * | 2010-03-26 | 2011-09-29 | 三洋電機株式会社 | Capacitor element, substrate with built-in capacitor, element sheet, and production methods for same |
| WO2015104112A1 (en) * | 2014-01-10 | 2015-07-16 | Siemens Aktiengesellschaft | Method for the production of a capacitor, capacitor, and use thereof |
| CN107162038A (en) * | 2017-07-07 | 2017-09-15 | 盛洪超 | A kind of cuprous oxide powder and preparation method thereof |
-
1997
- 1997-07-31 JP JP22080097A patent/JPH1154366A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007329189A (en) * | 2006-06-06 | 2007-12-20 | Tdk Corp | Thin-film capacitor, and manufacturing method thereof |
| JP2008258535A (en) * | 2007-04-09 | 2008-10-23 | Choshu Industry Co Ltd | Manufacturing method of multilayer capacitor |
| JP2010087507A (en) * | 2008-09-30 | 2010-04-15 | General Electric Co <Ge> | Film capacitor |
| US9390857B2 (en) | 2008-09-30 | 2016-07-12 | General Electric Company | Film capacitor |
| WO2011118308A1 (en) * | 2010-03-26 | 2011-09-29 | 三洋電機株式会社 | Capacitor element, substrate with built-in capacitor, element sheet, and production methods for same |
| WO2015104112A1 (en) * | 2014-01-10 | 2015-07-16 | Siemens Aktiengesellschaft | Method for the production of a capacitor, capacitor, and use thereof |
| DE102014200318A1 (en) * | 2014-01-10 | 2015-07-16 | Siemens Aktiengesellschaft | A method of manufacturing a capacitor, capacitor and use thereof |
| CN107162038A (en) * | 2017-07-07 | 2017-09-15 | 盛洪超 | A kind of cuprous oxide powder and preparation method thereof |
| CN107162038B (en) * | 2017-07-07 | 2019-05-28 | 苏州昆腾威新材料科技有限公司 | A kind of cuprous oxide powder and preparation method thereof |
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