JPH1168253A - Optical semiconductor device - Google Patents

Abstract

(57) [Problem] To provide an optical semiconductor device capable of reducing the electric capacity of an optical semiconductor element. SOLUTION: A polyimide layer 12 having an opening in a region where the surface electrode 2 is provided, and a metal film disposed on an upper surface of the polyimide layer 12 connected to the electrode 2 and an inner side surface of the opening in the opening. 13, the semiconductor laser 1 is mounted on the submount 5, and the metal wiring 4 on the submount 5 and the metal film 13 are adhered to each other using the solder material 6 to form the surface electrode 2 of the semiconductor laser 1. And the metal wiring 4 are electrically connected.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device, and more particularly to an optical semiconductor device having an edge-emitting or edge-illuminated optical semiconductor element mounted on a mounting table such as a submount.

[0002]

2. Description of the Related Art FIG. 5 is a perspective view (FIG. 5 (a)) showing the structure of a conventional optical semiconductor device, and an optical semiconductor device formed by mounting this optical semiconductor device together with an optical fiber and the like on a submount to form a module. FIG. 1 is a side view showing the structure of FIG. 1, in which a semiconductor laminated structure 101 is formed by laminating a plurality of semiconductor layers including a stripe-shaped active layer 107 extending on a substrate 100 in a direction perpendicular to the end face of the resonator. 108,
An optical semiconductor device including a front electrode 102 disposed on the upper surface of the semiconductor laminated structure 108 and a back electrode 109 disposed on the back surface of the substrate 100. Cladding layers of different conductivity types are formed above and below the active layer 107. Are arranged respectively,
Further, a double hetero structure formed in a mesa shape is formed, and the vicinity of the active layer 107 is an optical waveguide functioning as a waveguide. Reference numeral 103 denotes a regrowth interface between the mesa-shaped double hetero structure and the semiconductor layer disposed on the double hetero structure. Reference numeral 105 denotes a submount for mounting a semiconductor laser, and electric wiring is patterned on the surface of the submount. 104 is an optical fiber mounted on the submount 105, 105a is a groove for positioning and fixing the optical fiber 104 formed on the submount 105, and 106 is a solder for attaching the element 101 to the surface of the submount 105. Material.

[0003] In an optical semiconductor device 101 of an end emission type or an end incidence type such as a semiconductor laser or a photodiode employed in an optical subscriber system module, that is, an optical semiconductor module used for optical communication for a subscriber. Is a surface electrode 102 provided on the upper surface side of the substrate 100 of the element 101 in order to switch the operation of the element 101 at high speed.
It is required to reduce the electric capacitance between the element 101 and the regrowth interface 103 in the semiconductor multilayer structure 108 of the element 101.
Therefore, the size of the surface electrode 102 of the element 101 needs to be as small as possible.
As shown in FIG. 5, it is formed only on the region along the optical waveguide which will be the waveguide of the device.

The optical semiconductor device 101 is obtained by forming a semiconductor laminated structure 108 including an optical waveguide on a semiconductor substrate 100 having a sufficiently large thickness. Formed. When a module in which these optical semiconductor elements 101 are fixed together with the optical fiber 104 on the submount 105 is obtained, the optical semiconductor element 101 has an optical waveguide on the upper side in order to improve the alignment accuracy with the optical fiber 104. So that it faces the surface of the mount 105,
The electrical wiring is mounted on the patterned submount 105 by so-called junction down. That is, the surface electrode 102 is formed such that the surface electrode 102 side of the optical semiconductor element 101 faces the surface of the submount 105.
It is mounted by bonding the electrical wiring on the submount 105 using a solder material 106.

[0005]

However, in such an optical semiconductor device in which such a conventional optical semiconductor element is mounted on a mounting table such as a submount, when the optical semiconductor device is mounted, the melted solder material is used in the submount. Since it is spread upward and comes into contact with a region other than the region where the surface electrode on the surface of the element is provided, the substantial electrode area becomes larger than the surface electrode area of the element, and the electric power of the element becomes large. There is a problem that the capacity becomes large.

The present invention has been made to solve the above problems, and has as its object to provide an optical semiconductor device capable of reducing the electric capacity of an optical semiconductor element.

[0007]

An optical semiconductor device according to the present invention has a semiconductor laminated structure having a stripe-shaped optical waveguide having a predetermined width extending in a direction perpendicular to an end face thereof, and a semiconductor laminated structure. An optical semiconductor element including a stripe-shaped electrode provided in a region along the optical waveguide on the upper surface of the semiconductor device, and a region excluding a region provided with the stripe-shaped electrode on the upper surface of the semiconductor laminated structure An insulating material layer disposed thereon, a metal film connected to the stripe-shaped electrode disposed on the upper surface and inner surface of the insulating material layer, and a metal wiring on the upper surface thereof; A mounting table is provided that has a metal film and a mounting table bonded by a conductive material so as to face each other.

Further, an optical semiconductor device according to the present invention has a semiconductor laminated structure having a stripe-shaped optical waveguide having a predetermined width extending in a direction perpendicular to an end face, and an upper surface of the semiconductor laminated structure. An optical semiconductor element including a stripe-shaped electrode provided in a region along the optical waveguide,
On its upper surface, an electrical contact area where metal wiring is arranged,
A groove of a predetermined depth adjacent to the electrical contact area,
The metal wiring and the stripe-shaped electrodes of the optical semiconductor element are bonded to each other by a conductive material so as to face each other, and a region other than the electrode on the upper surface of the optical semiconductor device is disposed on the region other than the electrical contact region. And a table.

Further, an optical semiconductor device according to the present invention has a semiconductor laminated structure including a stripe-shaped optical waveguide having a predetermined width extending in a direction perpendicular to an end face on an upper portion thereof, and an optical semiconductor device having an upper surface of the semiconductor laminated structure. An optical semiconductor element including a stripe-shaped electrode provided in a region along the optical waveguide,
A concave portion having a predetermined depth provided with a metal wiring on the bottom surface is provided on the upper surface, and the metal wiring and the stripe-shaped electrode of the optical semiconductor element are provided with a predetermined space between the concave portion and the concave portion. And a mounting table in which a region other than the stripe-shaped electrodes on the upper surface of the optical semiconductor element is disposed on a region other than the concave portion thereof with a conductive material disposed so as to form a conductive material. Things.

[0010]

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiment 1 FIG. FIG. 1 is a perspective view showing the structure of an optical semiconductor device according to Embodiment 1 of the present invention (FIG. 1A), and a perspective view showing the structure of an optical semiconductor element mounted on the optical semiconductor device (FIG. 1 (b)), in the figure, the semiconductor laminated structure 8 includes a semiconductor substrate 10 and a stripe-shaped active layer 7 extending on the substrate 10 and extending in a direction perpendicular to an end face perpendicular to the substrate 10. A clad layer having a different conductivity type is disposed above and below the active layer 7 to form a double hetero structure. The clad layer and the active layer 7 are formed into a mesa shape. I have. The vicinity of the active layer 7 is an optical waveguide functioning as a waveguide. This semiconductor laminated structure 8 and this semiconductor laminated structure 8
The semiconductor laser 1 is constituted by the front electrode 2 arranged on the upper surface of the substrate along the optical waveguide and the back electrode 9 arranged on the back surface of the substrate 10. Reference numeral 3 denotes a regrowth interface between the mesa-shaped portion and the semiconductor layer disposed on the mesa-shaped portion. Reference numeral 5 denotes a submount made of silicon or the like having an insulating property for mounting the semiconductor laser, and the electric wiring 4 is patterned on the surface thereof. 12
Is a polyimide layer provided on the upper surface of the semiconductor laser, and an opening on which the electrode 2 is exposed is provided in a region on the surface electrode 2 of the element 1. A metal film 13 made of a laminated film of titanium, chromium, gold or the like connected to the surface electrode 2 is provided on the upper surface of the polyimide layer and on the side surface of the opening. The semiconductor laser 1 is bonded on the submount 5 with a solder material via a polyimide layer 12 and a metal film 13. Note that, instead of the polyimide layer 12, an insulating material layer such as a layer made of an insulating resin may be provided. As the metal film 13, a general electrode material can be used.

FIG. 2 is a cross-sectional view in a direction perpendicular to the laser resonator length direction showing the method of assembling the optical semiconductor device according to the first embodiment of the present invention. In the figure, the same reference numerals as those in FIG. Shows the part to be performed.

Next, an assembling method will be described. First, as shown in FIG. 2A, the electrodes 2 and 4 are applied to a semiconductor multilayer structure 8 obtained by the same manufacturing method as that of a normal semiconductor laser, that is, formed by a plurality of epitaxial growths.
The semiconductor laser 1 obtained by forming the electrode 9 is prepared, and a polyimide 12a is applied on the upper surface of the semiconductor laser 1 so as to cover the surface electrode 2. An appropriate thickness is 5 μm or more. Thereafter, as shown in FIG. 2B, only the upper portion of the surface electrode 2 of the semiconductor laser 1 is selectively etched to form an opening in the upper region of the surface electrode 2 of the polyimide 12a where the surface electrode 2 is exposed. Is provided. Thereafter, as shown in FIG. 2 (c), a metal film 13 is formed on the upper surface of the polyimide and on the side surfaces in the openings by a method such as sputtering or vapor deposition. Incidentally, as shown in FIG. 7, a metal plating 14 may be further provided thereon. Subsequently, the semiconductor laser 1 is placed on the submount 5 so that the upper surface of the semiconductor laser 1 faces the upper surface of the submount 5, and the uppermost surface of the metal film 13 is electrically connected to the submount 5 by the solder material 6. The optical semiconductor device as shown in FIG. 1A is obtained by adhering to the region so that both oppose each other.

In this optical semiconductor device, the metal wiring 4 of the submount 5 and the surface electrode 2 of the semiconductor laser 1 are electrically connected via the metal film 13 and the surface region 200 of the semiconductor laser 1 In the electrode non-forming region 202 except the surface electrode forming region 201 where the surface electrode 2 is provided, the semiconductor laser 1 and the metal wiring 4 or the solder material 6 on the submount 5 are made of polyimide 1 having an insulating layer.
2, the semiconductor device is compared with the conventional optical semiconductor device in which the above-described region of the element surface where the surface electrode is not formed and the solder material spread on the submount are in direct contact. The distance between the surface of the laser 1 and the metal wiring 4 or the solder material 6 on the surface of the submount 5 can be increased by the thickness of the polyimide 12, whereby the electrode non-forming region 202 of the semiconductor laser 1 and the submount 5
The capacitance between the upper metal wiring 4 and the solder material 6 can be reduced, and the capacitance between the regrowth interface 3 of the semiconductor laser 1 and the metal wiring 4 or the solder material 6 can be reduced. Can be reduced.

As described above, according to the first embodiment, the polyimide layer 1 having an opening on the surface electrode formation region 201 is formed.
2 and a metal film 1 disposed on the upper surface of the polyimide layer 12 connected to the electrode 2 in the opening and on the inner surface of the opening.
3, the semiconductor laser 1 is mounted on the submount 5 such that the upper surface thereof faces the upper surface of the submount 5, and the metal wiring 4 and the metal film 13 on the submount 5 are soldered to the solder material 6. The surface electrode 2 of the semiconductor laser 1 and the metal wiring 4 are electrically connected to each other, so that the distance between the surface of the semiconductor laser 1 and the metal wiring 4 or the solder material 6 on the surface of the submount 5 is reduced. The thickness between the regrowth interface 3 in the electrode non-forming region 202 of the semiconductor laser 1 and the metal wiring 4 or the solder material 6 of the submount 5 can be reduced by the thickness of the polyimide 12. As a result, an optical semiconductor device in which the element capacitance of the semiconductor laser is reduced can be obtained.

Embodiment 2 FIG. 3 is a sectional view showing the structure of an optical semiconductor device according to Embodiment 2 of the present invention (FIG. 2A),
FIG. 2B is a view showing the structure of a submount of the optical semiconductor device (FIG. 2B), in which the same reference numerals as those in FIG. 1 denote the same or corresponding parts.
An electric contact region 23 having a metal wiring 22; and a bonding region 2 provided on both sides of the electric contact region 23 through a groove 21 having a predetermined depth to ensure bonding strength.
4 and an insulating material such as silicon having an insulating property on the electrical contact area 23 and an adhesive 26 having an insulating property on the bonding area 24.
7, an electrical contact area 23, in particular a metal wiring 22,
The surface electrode 2 of the semiconductor laser 1 is bonded so as to face each other, and the bonding region 24 and the electrode non-forming region 202 of the semiconductor laser 1 are bonded to each other by the adhesive 26 so as to face each other.

The optical semiconductor device according to the second embodiment is
As shown in FIG. 3B, a groove 21 is formed on the surface by etching or the like to use a submount 35 in which an electric contact region 23 having a metal wiring 22 and an adhesive region 24 for ensuring bonding strength are separated. It was made. That is, as shown in FIG. 3 (a), the semiconductor laser 1 is placed so that its upper surface faces the upper surface of the submount 25 by using a solder material 27 in the electric contact region 23 and an adhesive 26 in the bonding region 24. Since the solder material 27 spreading on the submount 25 protrudes from the electrical contact area 23 at the time of bonding, the protruding solder material 27 flows into the groove 21. ,
The solder material 27 does not spread from the electrical contact region 23 to the bonding region 24, and thus the spread of the solder material 27 during bonding is suppressed by the groove 21. As a result, the electrical contact area between the semiconductor laser 1 and the submount 25 does not increase from the area of the electrical contact region 23,
As compared with the above-described conventional optical semiconductor device, the electrical contact area between the semiconductor laser 1 and the submount 25 can be kept small, and the element capacitance of the semiconductor laser 1 can be reduced.

The electrode non-forming region 2 of the semiconductor laser 1
Since No. 02 is bonded to the submount 25 in the bonding area 24, sufficient bonding strength can be ensured.

It is preferable that the size of the electrical contact region 23 be equal to or smaller than the size of the surface electrode 2 of the semiconductor laser 1 in order to sufficiently reduce the increase in element capacitance due to the spread of the solder material.

As described above, according to the second embodiment, the submount 25 having the electrical contact area 23 and the adhesive area 24 provided on both sides of the groove 21 with the groove 21 therebetween is used. The solder material 27 protruding from the electric contact region 23 can flow into the groove 21, and the electric contact area between the semiconductor laser 1 and the submount 25 does not become larger than the area of the electric contact region 23. Thus, there is an effect that an optical semiconductor device in which the element capacitance of the semiconductor laser is reduced can be obtained.

Embodiment 3 FIG. 4 is a sectional view showing the structure of an optical semiconductor device according to Embodiment 3 of the present invention (FIG. 4A),
FIG. 4 is a cross-sectional view (FIG. 4B) showing the structure of the submount of the optical semiconductor device. In FIG. 4, the same reference numerals as those in FIG. Reference numeral 35 denotes a submount in which an insulating film 31 such as SiO ₂ formed by sputtering or the like is disposed on a silicon layer 30. The size of the insulating film 31 as viewed from above is the surface electrode 2 of the semiconductor laser 1. A slightly larger recess 32 is provided by etching. The silicon layer 30 is exposed at the bottom of the concave portion 32, and the metal wiring 22 is provided at the center of the bottom. The solder material 27 is arranged on the bottom surface of the concave portion 32 so as to form a predetermined space between the solder material 27 and the concave portion 32. Are arranged so that a space is formed in the space.

This optical semiconductor device uses a submount 35 having a concave portion 32 which is larger than the surface electrode 2 of the semiconductor laser 1 and has a larger size when viewed from above.
2 The metal wiring 22 disposed on the bottom surface and the semiconductor laser 1
The surface electrode 2 is bonded to the surface electrode 2 of the semiconductor laser 1 so that the upper surface thereof is opposed to the surface electrode 2 of the semiconductor laser 1 only by the solder material 27.

As shown in FIG. 4B, a solder material 25 is disposed on the bottom surface of the submount 35 so as to be slightly thicker than the insulating film 31 so as to cover the wiring 22 on the bottom surface of the concave portion 32. The adhesive 26 is arranged on both sides of the concave portion 32 on the surface of the submount 35, and the semiconductor laser 1 is placed and heated on the submount 35 so that the surface electrode 2 of the semiconductor laser faces the concave portion 32. Then, while the submount 35 and the semiconductor laser 1 are bonded,
Of the melted solder material 27, the surplus solder material 27 that has not been bonded to the surface electrode 2 flows into the space in the recess 32 where the solder material 27 was not arranged.

As a result, as shown in FIG. 4A, the optical semiconductor device has a structure in which the solder material 27 does not come into contact with the semiconductor laser 1 in a region other than the surface electrode forming region 201, and the solder material 27 The structure does not extend to the electrode non-forming region 202 on the upper surface of the laser 1, and the electrical contact region between the semiconductor laser 1 and the submount 35 is reduced as compared with the above-mentioned conventional optical semiconductor device, and the device of the semiconductor laser 1 The capacity can be reduced.

Further, since the electrode non-forming region 202 on the surface of the semiconductor laser 1 is bonded by the adhesive 26 disposed adjacent to the concave portion 32 of the submount 25, a sufficient bonding strength can be ensured. is there.

As described above, according to the third embodiment, the submount 35 having the concave portion 32 having a size larger than the surface electrode 2 of the semiconductor laser 1 as viewed from above is used, and the submount 35 is disposed on the bottom surface of the concave portion 32. The metal wiring 22 and the surface electrode 2 of the optical semiconductor laser 1 are bonded to each other by the solder material 27 whose upper surface disposed in the recess 32 is in contact only with the surface electrode 2 of the semiconductor laser 1. ,
Since the solder material 27 that is not adhered to the surface electrode 2 moves to the space in the recess 32 where the solder material 27 is not disposed, the semiconductor laser 1 and the solder material 27 can be brought into contact with each other only at the surface electrode 2. It is possible to obtain an optical semiconductor device in which the electrical contact area between the semiconductor laser and the submount is reduced and the element capacitance of the semiconductor laser is reduced.

FIG. 6 is a view for explaining a modification of the optical semiconductor device according to the third embodiment of the present invention. In the figure, the same reference numerals as those in FIG. 4 denote the same or corresponding parts. In the third embodiment, the submount has a two-layer structure in which an insulating film such as a SiO ₂ film is disposed on a silicon layer, and has a concave portion formed by patterning the insulating film on the surface thereof. However, in the present invention, as shown in FIG. 6, a concave portion 32 formed of a single layer and formed by directly patterning the surface thereof is used.
The submount 35a provided with a may be used, and in such a case, the same effect as in the third embodiment can be obtained.

In the first to third embodiments, the case where a semiconductor laser is used has been described. However, in the present invention, another optical semiconductor element such as a photodiode may be used. In this case, the same effects as those of the first to third embodiments can be obtained.

In the first to third embodiments, the case where a solder material is used for bonding the semiconductor laser and the wiring of the submount has been described. However, in the present invention, a conductive adhesive is used instead of the solder material. Other adherable conductive materials may be used. In such a case, the same effects as those of the first to third embodiments can be obtained.

In the first to third embodiments, the case where the submount is used has been described. However, in the present invention, another mounting table may be used instead of the submount. Embodiment 1 also in the case
The same effects as those of Nos. 1 to 3 are obtained.

[0030]

As described above, according to the present invention, a semiconductor laminated structure having a stripe-shaped optical waveguide of a predetermined width extending in a direction perpendicular to the end face on the upper surface thereof, and an upper surface of the semiconductor laminated structure. An optical semiconductor element including a stripe-shaped electrode provided in a region along the optical waveguide; and an optical semiconductor element disposed on a region on the upper surface of the semiconductor laminated structure except for a region where the stripe-shaped electrode is provided. Insulating material layer, a metal film connected to the stripe-shaped electrode disposed on the upper surface and inner surface of the insulating material layer, and a metal wiring on the upper surface, the metal film with respect to the metal wiring With the mounting table bonded by a conductive material so as to face each other, the capacitance formed on the regrowth interface in the region other than the region where the stripe-shaped electrodes are provided on the upper surface of the optical semiconductor element is reduced. Can fence, the effect can be obtained optical semiconductor device with reduced device capacitance of the semiconductor laser is obtained.

According to the invention, there is provided a semiconductor laminated structure having a stripe-shaped optical waveguide having a predetermined width extending in a direction perpendicular to an end face on an upper portion thereof, and the optical waveguide on an upper surface of the semiconductor laminated structure. An optical semiconductor device including a stripe-shaped electrode provided in a region along
An electrical contact region in which a metal wiring is disposed; and a groove having a predetermined depth adjacent to the electrical contact region, wherein the metal wiring and the stripe-shaped electrode of the optical semiconductor element are electrically conductive to face each other. And a mounting table on which a region other than the electrode on the upper surface of the optical semiconductor element is disposed on a region other than the electrical contact region, the conductive material protruding from the electrical contact region. Can be caused to flow into the groove, and the element capacity of the optical semiconductor element is reduced by preventing the area of electrical contact between the optical semiconductor element and the mounting table from becoming larger than the area of the electrical contact region. There is an effect that an optical semiconductor device can be obtained.

Further, according to the present invention, a semiconductor laminated structure having a stripe-shaped optical waveguide having a predetermined width extending in a direction perpendicular to an end face on an upper portion thereof, and the optical waveguide on an upper surface of the semiconductor laminated structure is provided. Semiconductor device having a stripe-shaped electrode provided in a region along the upper surface, a concave portion having a predetermined depth provided with a metal wiring on the bottom surface is provided on the upper surface, and the metal wiring and the optical semiconductor device The stripe-shaped electrodes are adhered to each other by a conductive material disposed in the concave portion so as to form a predetermined space between the electrode and the concave portion, and the upper surface of the optical semiconductor element is formed on a region other than the concave portion. And a mounting table on which a region other than the stripe-shaped electrodes is arranged, so that the remaining conductive material that is not adhered to the stripe-shaped electrodes is transferred to a space where the conductive material in the concave portion is not disposed. As a result, the optical semiconductor element and the conductive material can be brought into contact only with the stripe-shaped electrode, the electrical contact area between the optical semiconductor element and the mounting table is reduced, and the element capacity of the optical semiconductor element is reduced. There is an effect that an optical semiconductor device can be obtained.

[Brief description of the drawings]

FIG. 1 is a diagram showing a structure of an optical semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a sectional view illustrating the method for manufacturing the optical semiconductor device according to the first embodiment of the present invention.

FIG. 3 is a diagram showing a structure of an optical semiconductor device according to a second embodiment of the present invention.

FIG. 4 is a diagram showing a structure of an optical semiconductor device according to a third embodiment of the present invention.

FIG. 5 is a diagram showing a structure of a conventional optical semiconductor device.

FIG. 6 is a diagram showing a structure of a modification of the optical semiconductor device according to the third embodiment of the present invention.

FIG. 7 is a diagram for explaining a structure of a modified example of the optical semiconductor device according to the first embodiment of the present invention;

[Explanation of symbols]

1 semiconductor laser, 2,102 surface electrode, 3,103
Regrowth interface, 4,22 metal wiring, 5,25,35,
105 submount, 6, 27, 106 solder material,
7,107 active layer, 8,108 semiconductor laminated structure,
9,109 Back electrode, 10,100 Semiconductor substrate, 1
2 polyimide layer, 13 metal film, 21 groove, 23 electrical contact area, 24 adhesive area, 26 adhesive, 30
Silicon layer, 31 insulating film, 32 recess, 101 optical semiconductor element, 105a fiber mounting groove, 104 optical fiber, 200 surface electrode, 201 surface electrode formation area, 202 electrode non-formation area.

Claims (3)

[Claims] 1. A semiconductor laminated structure having a stripe-shaped optical waveguide having a predetermined width extending in a direction perpendicular to an end face on an upper portion thereof, and a semiconductor laminated structure provided on a top surface of the semiconductor laminated structure in a region along the optical waveguide. An optical semiconductor device having a striped electrode provided thereon; an insulating material layer disposed on a region of the upper surface of the semiconductor laminated structure other than a region where the striped electrode is provided; A metal film connected to the stripe-shaped electrodes disposed on the upper surface and the inner surface of the layer; and a metal wiring on the upper surface, and the metal films are bonded to the metal wiring by a conductive material so as to face each other. An optical semiconductor device, comprising: a mounting table. 2. A semiconductor laminated structure having a stripe-shaped optical waveguide having a predetermined width extending in a direction perpendicular to an end face on an upper portion thereof, and a semiconductor laminated structure provided on an upper surface of the semiconductor laminated structure in a region along the optical waveguide. An optical semiconductor element comprising a striped electrode, an electrical contact area on which metal wiring is arranged,
A groove of a predetermined depth adjacent to the electrical contact area,
The metal wiring and the stripe-shaped electrodes of the optical semiconductor element are bonded to each other by a conductive material so as to face each other, and a region other than the electrode on the upper surface of the optical semiconductor device is disposed on the region other than the electrical contact region. An optical semiconductor device comprising: a mounting table. 3. A semiconductor laminated structure having a stripe-shaped optical waveguide having a predetermined width extending in a direction perpendicular to an end face on an upper portion thereof, and a semiconductor laminated structure provided on an upper surface of the semiconductor laminated structure in a region along the optical waveguide. An optical semiconductor device having a striped electrode, a concave portion having a predetermined depth provided with a metal wiring on the bottom surface, and the metal wiring and the striped electrode of the optical semiconductor device are formed on the bottom surface. A stripe-shaped electrode on the upper surface of the optical semiconductor element is adhered to a region other than the concave portion by a conductive material disposed so as to form a predetermined space between the concave portion and the conductive material. An optical semiconductor device, comprising: a mounting table on which a region other than the above is arranged.