JPH1183776A - Gas detector and its design method - Google Patents
Gas detector and its design methodInfo
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- JPH1183776A JPH1183776A JP25604997A JP25604997A JPH1183776A JP H1183776 A JPH1183776 A JP H1183776A JP 25604997 A JP25604997 A JP 25604997A JP 25604997 A JP25604997 A JP 25604997A JP H1183776 A JPH1183776 A JP H1183776A
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- signal
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- ppm
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Abstract
Description
【0001】[0001]
【発明の利用分野】この発明は、金属酸化物半導体ガス
センサを用いたガス検出装置とその設計とに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas detector using a metal oxide semiconductor gas sensor and its design.
【0002】[0002]
【従来技術】温度変化を用いた金属酸化物半導体ガスセ
ンサとして、SnO2系のCOセンサTGS203等
(TGS203はフィガロ技研の商品名)がある。この
ガスセンサは150秒周期で動作し、最初の60秒間を
高温域に次の90秒間を低温域に割り当て、高温域での
最終温度は300℃、低温域での最終温度は80℃で、
低温域終了時の金属酸化物半導体の抵抗値からCOを検
出する。センサの抵抗値はCO濃度にほぼ反比例し、水
素とCOとの相対感度は1:10で、例えば水素100
0ppmとCO100ppmとが等価となる。さらに抵抗値の
初期分布は、CO100ppm中で1〜10KΩである。2. Description of the Related Art As a metal oxide semiconductor gas sensor using a temperature change, there is an SnO2 type CO sensor TGS203 or the like (TGS203 is a trade name of FIGARO GIKEN). This gas sensor operates at a cycle of 150 seconds, assigning the first 60 seconds to the high temperature area and the next 90 seconds to the low temperature area, the final temperature in the high temperature area is 300 ° C, and the final temperature in the low temperature area is 80 ° C.
CO is detected from the resistance value of the metal oxide semiconductor at the end of the low temperature range. The resistance value of the sensor is almost inversely proportional to the CO concentration, and the relative sensitivity between hydrogen and CO is 1:10.
0 ppm and 100 ppm of CO are equivalent. Further, the initial distribution of the resistance value is 1 to 10 KΩ in 100 ppm of CO.
【0003】しかしながら金属酸化物半導体ガスセンサ
には使用に伴う特性のドリフトがあり、このセンサの場
合は使用開始から2カ月程度で抵抗値は最大2倍に増加
し、その後数年程度で抵抗値は初期値の約1/2程度ま
で低下する。TGS203の抵抗値はCO濃度にほぼ反
比例するので、上記のドリフトはCO検出濃度が2倍〜
1/2倍に変化することを意味する。[0003] However, the metal oxide semiconductor gas sensor has a characteristic drift associated with use. In the case of this sensor, the resistance value increases at most twice in about two months from the start of use, and in several years thereafter, the resistance value increases. It decreases to about 1/2 of the initial value. Since the resistance value of the TGS 203 is almost inversely proportional to the CO concentration, the above drift is caused when the CO detection concentration is twice or more.
It means to change by 1/2 times.
【0004】発明者は、TGS203を用いて温度変化
に伴う複数の時点での信号を組合せ、ドリフトを補正す
ることを検討した。COの検出信号としては従来法と同
様に低温域の信号を用いることとし、それと組み合わせ
る信号を探索した。そしてこのためには、どの信号を用
いるのが好ましいかの探索手法が必要であった。例えば
TGS203は150秒周期で動作し、仮に3秒毎にセ
ンサ信号をサンプリングすると信号の総数は50個であ
り、これらの信号の組合せは極めて多数存在する。そし
て信号の数が多いとその整理はきわめて難しい。[0004] The inventor has studied the use of the TGS 203 to combine signals at a plurality of time points accompanying a temperature change to correct drift. As in the conventional method, a signal in a low temperature range was used as a detection signal of CO, and a signal to be combined with the signal was searched. For this purpose, a search method for determining which signal should be used is required. For example, the TGS 203 operates in a cycle of 150 seconds. If sensor signals are sampled every three seconds, the total number of signals is 50, and there are extremely many combinations of these signals. And if there are many signals, it is extremely difficult to organize them.
【0005】ここで関連する先行技術を示す。ガスセン
サの温度を変化させて、その抵抗値の挙動を温度波形と
見なし、これをフーリエ変換してガスを検出すること
は、吉川らにより提案されている(アナリティカル・ケ
ミストリー VoL68,No.13,2067−2072,
1996)。またガスセンサの高温域の信号と低温域の
信号とを組み合わせることには、多数の研究がある(例
えば、米国特許4896143,同4399684)。Here, related prior art is shown. It has been proposed by Yoshikawa et al. To change the temperature of a gas sensor and regard the behavior of its resistance value as a temperature waveform and to perform a Fourier transform on this to detect gas (Analytical Chemistry VoL68, No. 13, 2067-2072
1996). In addition, there are many studies on combining a high-temperature signal and a low-temperature signal of a gas sensor (for example, US Pat. Nos. 4,896,143 and 4,399,684).
【0006】[0006]
【発明の課題】この発明の課題は、金属酸化物半導体ガ
スセンサの温度変化を用いてガスを検出するに際し、用
いる信号の組合せを容易に決定し得るようにすることに
ある。SUMMARY OF THE INVENTION An object of the present invention is to make it possible to easily determine a combination of signals to be used when detecting a gas using a temperature change of a metal oxide semiconductor gas sensor.
【0007】[0007]
【発明の構成】この発明では、金属酸化物半導体ガスセ
ンサを温度変化させて複数のガスセンサ信号を取り出
し、これらを組み合わせて対象ガスを検出する。例えば
複数の時点でガスセンサの出力をサンプリングすれば、
複数のガスセンサ信号が得られる。またサンプリングし
た出力にフーリエ変換等を施せば、フーリエ変換等での
成分が複数のガスセンサ信号となる。According to the present invention, a plurality of gas sensor signals are extracted by changing the temperature of a metal oxide semiconductor gas sensor, and an object gas is detected by combining these signals. For example, if you sample the output of the gas sensor at multiple times,
A plurality of gas sensor signals are obtained. If a Fourier transform or the like is applied to the sampled output, components in the Fourier transform or the like become a plurality of gas sensor signals.
【0008】この発明はここで、対象ガスへの感度の高
いガスセンサ信号を主信号として用い、上記主信号と相
関が高いガスセンサ信号の中で、対象ガスへの感度が異
なり、かつ補正対象に対する特性が類似した信号を補正
用信号として用いることを特徴とする。According to the present invention, a gas sensor signal having high sensitivity to a target gas is used as a main signal. Among the gas sensor signals having a high correlation with the main signal, the sensitivity to the target gas is different and the characteristic for the correction target is different. Are used as correction signals.
【0009】この発明では、金属酸化物半導体ガスセン
サを温度変化させて複数のガスセンサ信号を取り出し、
これらを組み合わせて対象ガスを検出するようにしたガ
ス検出装置の設計において、対象ガスへの感度の高いガ
スセンサ信号を主信号として用い、上記主信号と相関が
高いガスセンサ信号を探索して、探索したガスセンサ信
号の中で、対象ガスへの感度が異なり、かつ補正対象に
対する特性が類似した信号を補正用信号として用いるこ
とを特徴とする。According to the present invention, a plurality of gas sensor signals are extracted by changing the temperature of the metal oxide semiconductor gas sensor.
In the design of a gas detection device that is configured to detect a target gas by combining these, a gas sensor signal having high sensitivity to the target gas is used as a main signal, and a gas sensor signal having a high correlation with the main signal is searched and searched. In the gas sensor signal, a signal having different sensitivity to a target gas and having similar characteristics to a correction target is used as a correction signal.
【0010】好ましくは、前記の相関として、ガスセン
サを複数個、例えば10個〜100個程度用いて温度変
化に対するガスセンサ信号の波形(以下温度波形)を測
定し、対象ガス中での抵抗値の相関を用いる。また好ま
しくは、前記の相関として、ガスセンサを複数個、例え
ば10個〜100個程度用いて温度波形を測定し、補正
対象での抵抗値の挙動の相関を用いる。Preferably, as the correlation, a waveform of a gas sensor signal (hereinafter referred to as a temperature waveform) with respect to a temperature change is measured using a plurality of gas sensors, for example, about 10 to 100 gas sensors, and a correlation of a resistance value in a target gas is measured. Is used. Preferably, as the correlation, a temperature waveform is measured using a plurality of gas sensors, for example, about 10 to 100 gas sensors, and a correlation of a behavior of a resistance value in a correction target is used.
【0011】[0011]
【発明の作用と効果】この発明では、金属酸化物半導体
ガスセンサを温度変化させてCOや水蒸気,アンモニ
ア,エタノール,ベンゼン等のガスを検出する。温度変
化は例えばガスセンサのヒータに方形波状の電力を加え
て行うが、サイン波状や鋸波状等でも良い。金属酸化物
半導体の種類は実施例に示すSnO2の他にIn2O3や
ZnO等でも良く、センサの構造は任意である。According to the present invention, the temperature of the metal oxide semiconductor gas sensor is changed to detect gases such as CO, water vapor, ammonia, ethanol, and benzene. The temperature change is performed, for example, by applying a square wave power to the heater of the gas sensor, but may be a sine wave, a sawtooth wave, or the like. The type of the metal oxide semiconductor may be In2O3, ZnO, or the like in addition to SnO2 shown in the embodiment, and the structure of the sensor is arbitrary.
【0012】主信号は検出対象ガスへの感度が高い信号
で、補正用信号はセンサ特性のドリフト,温湿度依存
性,共存ガスへの感度等への補正用の信号である。そし
てこの発明では、補正対象での特性に関して主信号と相
関が高く、かつ対象ガスへの感度が異なる信号を補正用
の信号とする。The main signal is a signal having high sensitivity to the gas to be detected, and the correction signal is a signal for correcting drift of sensor characteristics, temperature / humidity dependency, sensitivity to coexisting gas, and the like. In the present invention, a signal having a high correlation with the main signal with respect to the characteristic of the correction target and having a different sensitivity to the target gas is used as a correction signal.
【0013】ここで発明者は1つの経験則を発見した。
例えばガスセンサのドリフト、即ち使用に伴うセンサ特
性の変化を補正対象とする。主信号の選択は対象ガスへ
の感度の点から行えばよく簡単である。ここで例えば数
十個のセンサを用い、測定開始時、例えばガスセンサの
使用開始から3日目〜1週間目程度の時期での、対象ガ
ス中等での温度波形を測定する。ここで主信号と抵抗値
の相関の高い時点を選び出す。この選択は使用開始時の
初期的特性に関して行ったもので、ドリフトを反映して
いない。しかしここで抵抗値の相関の高い信号を用いる
と、ドリフトに関しても高い相関が得られるのである。Here, the inventor has discovered one rule of thumb.
For example, a drift of the gas sensor, that is, a change in sensor characteristics due to use is set as a correction target. The selection of the main signal can be made simply from the viewpoint of sensitivity to the target gas. Here, for example, several tens of sensors are used to measure the temperature waveform in the target gas or the like at the start of measurement, for example, about three days to one week after the start of use of the gas sensor. Here, a time point having a high correlation between the main signal and the resistance value is selected. This selection was made with respect to the initial characteristics at the start of use and does not reflect drift. However, if a signal having a high resistance value correlation is used here, a high correlation can be obtained even with respect to drift.
【0014】即ちある測定日に置いて相関が高い2つの
信号は、他の項目に関しても挙動が類似した信号であ
り、その一方を主信号他方を補正用信号とすると、これ
らはドリフト補正にも用いる得る。当然のことながら、
例えばドリフトを補正対象とする場合、ドリフトに関す
る挙動、例えば抵抗値の初期値からの変化分等を測定し
て、この変化分の相関を求めて補正用信号を決定しても
良い。ここでの発明者の知見は、初期的に抵抗値が相関
する2つの信号は、ドリフトによる抵抗値の変化に関し
ても強く相関することである。That is, two signals having a high correlation on a certain measurement day have similar behaviors with respect to other items, and if one of them is a main signal and the other is a correction signal, they are also used for drift correction. Get used. As a matter of course,
For example, when a drift is to be corrected, a drift-related behavior, for example, a change from the initial value of the resistance value may be measured, and a correlation for the change may be obtained to determine a correction signal. The inventor's knowledge here is that the two signals whose resistance values are initially correlated strongly correlate with the change in resistance value due to drift.
【0015】フーリエ変換等の母関数へ変換する場合、
対象ガスへの感度が高い成分を主信号とし、これと相関
が強く、かつ対象ガスへの感度が低く、補正対象での挙
動が類似する成分を補正用の信号とする。When converting to a generating function such as Fourier transform,
A component having high sensitivity to the target gas is defined as a main signal, and a component having a strong correlation with the sensitivity, a low sensitivity to the target gas, and a similar behavior in the correction target is defined as a correction signal.
【0016】この発明では、主信号と組み合わせる補正
用信号を容易に決定することができる。以下に相関関数
を用いて補正用信号を選択し、クラスター解析で選択し
た補正用信号の妥当性を確認をするようにした実施例を
示す。なおガス検出装置の構造、その調整方法、ガス検
出のアルゴリズム等も示すが、これはガス検出装置の構
造自体も新しいものが要求され、調整方法に関しても従
来の調整では不十分であるからである。実施例では特定
のガスセンサと特定の検出対象や補正対象を示すが、こ
れらに限られるものではない。According to the present invention, the correction signal to be combined with the main signal can be easily determined. Hereinafter, an embodiment in which a correction signal is selected using a correlation function and the validity of the correction signal selected by the cluster analysis will be confirmed. The structure of the gas detection device, its adjustment method, the algorithm of gas detection, etc. are also shown, because the structure itself of the gas detection device is required to be new, and the conventional adjustment is not enough for the adjustment method. . In the embodiment, a specific gas sensor, a specific detection target and a correction target are shown, but the present invention is not limited to these.
【0017】[0017]
【0018】[0018]
【ガス検出装置の構造】図1〜図36に実施例を示す。
図1に開発したガス検出装置の構造を示すと、Sは金属
酸化物半導体ガスセンサで、ここではTGS203を用
い、SnO2系の金属酸化物半導体2の両端に一対のヒ
ータh1,h2を配置したものである。センサSの種類
や構造,材料,検出対象ガスは任意である。4は直流5
V等の直流電源で、その出力VDDを用いてガス検出装置
を駆動する。ガスセンサSの一対のヒータh1,h2を
共に駆動するため、トランジスタT1,T2を用い、こ
れらを同時にオン/オフさせる。そしてトランジスタT
1,T2が共にオンすると、ヒータh1、h2に電流が
流れ、トランジスタT1,T2のオンのデューティー比
を変えることによって、金属酸化物半導体2の温度を周
期的に変化させる。ここではTGS203の動作条件に
従い、高温域を60秒間、低温域を90秒間とし、ヒー
タ電力の波形は高温域と低温域の2段階で変化する方形
波状で、高温域の最終温度は300℃、低温域の最終温
度は80℃である。また実施例では時刻の表示として、
低温域の終了直前を0秒目とし、0〜60秒目を高温域
として、90〜150秒目(150秒目は0秒目と等し
い)を低温域とする。ただしヒータ波形は方形波に限ら
ず、サイン波や鋸波等でも良い。[Structure of Gas Detector] FIG. 1 to FIG. 36 show an embodiment.
FIG. 1 shows the structure of the developed gas detecting device. S is a metal oxide semiconductor gas sensor, in which a TGS203 is used and a pair of heaters h1 and h2 are arranged at both ends of a SnO2 based metal oxide semiconductor 2. It is. The type, structure, material, and detection target gas of the sensor S are arbitrary. 4 is DC 5
The gas detection device is driven by the output VDD using a DC power supply such as V. In order to drive the pair of heaters h1 and h2 of the gas sensor S together, transistors T1 and T2 are used, and these are turned on / off at the same time. And the transistor T
When both T1 and T2 are turned on, current flows through the heaters h1 and h2, and the temperature of the metal oxide semiconductor 2 is periodically changed by changing the on duty ratio of the transistors T1 and T2. Here, in accordance with the operating conditions of the TGS 203, the high-temperature range is set to 60 seconds and the low-temperature range is set to 90 seconds. The waveform of the heater power is a square wave that changes in two stages, a high-temperature range and a low-temperature range. The final temperature in the low temperature range is 80 ° C. In the embodiment, the time is displayed as
The 0th second immediately before the end of the low temperature range is defined as the 0th second, the 0th to 60th second is defined as the high temperature range, and the 90th to 150th second (the 150th second is equal to the 0th second) is defined as the low temperature range. However, the heater waveform is not limited to a square wave, but may be a sine wave or a sawtooth wave.
【0019】金属酸化物半導体2には、抵抗ラダー5を
接続し、R1〜Rnはその個別の抵抗である。ここでは
各抵抗R1〜Rnは4倍ずつ変化するものとし、例えば
0.5KΩ,2KΩ,8KΩ,32KΩ,128KΩ,
512KΩの6つの抵抗を用いる。固定抵抗の精度は±
2%程度のものが容易に得られ、抵抗値の切り替えに基
づくAD変換誤差は±2%程度である。そしてトランジ
スタT1,T2をオフすると、電源出力VDD(以下検出
電圧Vcと呼ぶ)は金属酸化物半導体2を介して抵抗ラ
ダー5に流れ、抵抗ラダー5への出力電圧をAD変換し
て処理する。A resistance ladder 5 is connected to the metal oxide semiconductor 2, and R1 to Rn are individual resistors. Here, it is assumed that each of the resistors R1 to Rn changes four times, for example, 0.5KΩ, 2KΩ, 8KΩ, 32KΩ, 128KΩ,
Six resistors of 512 KΩ are used. The accuracy of the fixed resistor is ±
An AD conversion error of about 2% is easily obtained, and an AD conversion error based on the switching of the resistance value is about ± 2%. When the transistors T1 and T2 are turned off, the power supply output VDD (hereinafter, referred to as a detection voltage Vc) flows to the resistance ladder 5 via the metal oxide semiconductor 2, and the output voltage to the resistance ladder 5 is A / D converted and processed.
【0020】8はマイクロコンピュータで、ここでは4
ビットの1チップマイクロコンピュータを想定する。1
0はそのバスで、12は例えば8ビットのADコンバー
タ、14は抵抗ラダー制御部で、抵抗R1〜Rnの1本
のみをアースし、アースした抵抗を負荷抵抗として用い
る。そして前記のように抵抗ラダーへの出力電圧はAD
コンバータ12でAD変換される。なお抵抗ラダー5へ
の出力電圧をさらに分圧してAD変換しても良いことは
当然で、また抵抗ラダー5側の電圧ではなく、センサS
側の電圧をAD変換しても同じことである。16はヒー
タ制御部で、トランジスタT1,T2のオン/オフを制
御し、60秒の高温域と90秒の低温域からなる温度サ
イクルを発生させる。18はEEPROM制御部で、2
0はEEPROMである。Reference numeral 8 denotes a microcomputer.
Assume a one-chip microcomputer of bits. 1
Reference numeral 0 denotes the bus, reference numeral 12 denotes, for example, an 8-bit AD converter, reference numeral 14 denotes a resistor ladder control unit, which grounds only one of the resistors R1 to Rn, and uses the grounded resistor as a load resistor. As described above, the output voltage to the resistor ladder is AD
AD conversion is performed by the converter 12. It is natural that the output voltage to the resistance ladder 5 may be further divided and A / D-converted.
The same is true even if the voltage on the side is AD-converted. Reference numeral 16 denotes a heater control unit that controls on / off of the transistors T1 and T2 to generate a temperature cycle including a high-temperature region for 60 seconds and a low-temperature region for 90 seconds. Reference numeral 18 denotes an EEPROM control unit.
0 is an EEPROM.
【0021】EEPROM20の構成を図3に示すと、
例えばここではCOを検出対象とし、検出範囲をCO5
0〜600ppmの約10倍の範囲とする。基準信号とし
てはCO65ppm,200ppm,400ppmの3点を用
い、基準信号として0秒目のセンサ抵抗の対数LnR0,
6秒目のセンサ抵抗の対数LnR6,69秒目(低温域の
初期)のセンサ抵抗の対数LnR69を用いる。なおLnは
自然対数を表し、R0の0等の添え字は0秒基準のタイ
ミングを表す。CO200ppmや400ppmでも、同様に
して0秒目,6秒目,69秒目の3つの基準信号をセン
サ抵抗の対数の形で記憶させる。51〜53は、各濃度
についての基準信号を1枚のカードとして考えた際のカ
ードである。これ以外にカード54にはCO検出装置の
使用経歴を記録させる。即ち経過時間として、延べ使用
時間と過去のCOの警報に関する記録を記憶させる。延
べ使用時間はCO検出装置の電源がオンしている時間の
累積値であり、例えば時間の単位は1日として、累積使
用時間をカード54に記憶させる。警報の記録として
は、後述のブザーが鳴動する毎にその日付を記憶する。
日付としては、延べ使用時間と同じ基準での日付を記憶
させる。このようにすると、ブザーが鳴動した日が判明
する。FIG. 3 shows the structure of the EEPROM 20.
For example, here, CO is a detection target, and the detection range is CO5.
The range is about 10 times of 0 to 600 ppm. As the reference signal, three points of 65 ppm, 200 ppm, and 400 ppm of CO are used, and the logarithm LnR0,
The logarithm LnR6 of the sensor resistance at the 6th second and the logarithm LnR69 of the sensor resistance at the 69th second (the initial stage of the low temperature range) are used. Ln represents a natural logarithm, and a subscript such as 0 of R0 represents a timing based on 0 seconds. Similarly, at 200 ppm and 400 ppm of CO, the three reference signals at the 0th, 6th and 69th seconds are stored in the form of the logarithm of the sensor resistance. Cards 51 to 53 are used when the reference signal for each density is considered as one card. In addition, the card 54 is used to record the usage history of the CO detection device. That is, a record of the total use time and the past CO warning is stored as the elapsed time. The total usage time is a cumulative value of the time during which the power supply of the CO detection device is turned on. For example, the time unit is one day, and the cumulative usage time is stored in the card 54. As a record of the alarm, the date is stored each time a buzzer described later sounds.
As the date, a date based on the same standard as the total use time is stored. In this way, the day when the buzzer sounds is known.
【0022】22は入出力で、調整スイッチ23とリセ
ットスイッチ24が接続されており、調整スイッチ23
をオンすると、EEPROM制御部18はEEPROM
20への書き込みが可能になり、CO検出装置の調整時
にのみ使用するスイッチである。リセットスイッチ24
はブザー38の鳴動を停止させるためのスイッチであ
る。Reference numeral 22 denotes an input / output, to which an adjustment switch 23 and a reset switch 24 are connected.
Is turned on, the EEPROM control unit 18
This switch is used only when adjusting the CO detection device. Reset switch 24
Is a switch for stopping the buzzer 38 from sounding.
【0023】マイクロコンピュータ8には4ビットの算
術論理演算ユニット26があり、150秒周期でCO検
出装置を動作させるためのシーケンス制御部28が存在
し、シーケンス制御部28はタイマを内蔵している。3
0はRAMで、揮発性メモリーとして用い、その構成を
図2に示す。RAM30には、LnR0,LnR6,LnR6
9の3つの測定データと、これらに対する2濃度での基
準信号が記憶されている。基準信号は常時は低濃度側の
65ppmと200ppmを使用し、ガス濃度が200ppmを
越えると、65ppmの基準信号を400ppmの基準信号で
置き換える。そしてガス濃度が200ppm以下に低下す
ると、400ppmの基準信号を65ppmの基準信号で置き
換える。ガスの検出範囲は50〜600ppmであり、5
0〜65ppmの範囲は、基準信号65ppmに近い。また4
00〜600ppmの範囲は、基準信号の400ppmに対し
て1.5倍の範囲であり、400ppmの基準信号を用いて
ガス濃度を正確に求めることができる。これらの範囲を
除くと、COが発生している場合、現実のCO濃度の両
側の基準信号を用いて、2つの基準信号間の補間により
ガス濃度を決定する。The microcomputer 8 has a 4-bit arithmetic and logic operation unit 26, a sequence control unit 28 for operating the CO detection device at a period of 150 seconds, and the sequence control unit 28 has a built-in timer. . 3
Reference numeral 0 denotes a RAM, which is used as a volatile memory, and its configuration is shown in FIG. In the RAM 30, LnR0, LnR6, LnR6
Nine measurement data and reference signals at two concentrations are stored. As the reference signal, 65 ppm and 200 ppm on the low concentration side are always used, and when the gas concentration exceeds 200 ppm, the 65 ppm reference signal is replaced with a 400 ppm reference signal. When the gas concentration drops to 200 ppm or less, the reference signal of 400 ppm is replaced with the reference signal of 65 ppm. The gas detection range is 50-600 ppm and 5
The range of 0 to 65 ppm is close to the reference signal 65 ppm. Also 4
The range of 00 to 600 ppm is 1.5 times the range of 400 ppm of the reference signal, and the gas concentration can be accurately obtained using the 400 ppm reference signal. Excluding these ranges, when CO is generated, the gas concentration is determined by interpolation between the two reference signals using the reference signals on both sides of the actual CO concentration.
【0024】RAM30にはこれ以外に、求めたCO濃
度やCO濃度から換算したCOHb(血中のCOヘモグ
ロビン濃度)やその他の補助信号(例えば1日単位での
タイマを構成するための時刻データ)等を記録する。The RAM 30 also stores the obtained CO concentration, COHb (CO hemoglobin concentration in blood) converted from the CO concentration, and other auxiliary signals (for example, time data for configuring a timer on a daily basis). And so on.
【0025】図1に戻り、32は警報制御部で、駆動回
路36を介してLED39,40を動作させ、血中CO
ヘモグロビン濃度が例えば5%以上でブザー38を鳴動
させる。ブザー38を鳴動させると、EEPROM制御
部18はカード54に警報の日付を書き込む。34はプ
ログラムメモリーであり、これ以外に温度補正に用いる
様々な常数等のデータも記録させてある。なおこれらの
データは、センサSが変わっても共通の固定データであ
る。そしてセンサ毎のデータは全てEEPROM20に
記録させてある。42はサーミスタで周囲温度を測定
し、44は温湿度補正部である。Returning to FIG. 1, reference numeral 32 denotes an alarm control unit which operates the LEDs 39 and 40 via a drive circuit 36 to thereby control the blood CO 2.
The buzzer 38 sounds when the hemoglobin concentration is, for example, 5% or more. When the buzzer 38 sounds, the EEPROM control unit 18 writes the date of the alarm on the card 54. Reference numeral 34 denotes a program memory in which various constants and other data used for temperature correction are recorded. These data are common fixed data even when the sensor S changes. All data for each sensor is recorded in the EEPROM 20. 42 is a thermistor for measuring the ambient temperature, and 44 is a temperature / humidity correction unit.
【0026】[0026]
【検出装置でのサンプリングと対数変換】図4に10個
のセンサの平均の温度波形を示す。CO100ppmの波
形に実施例で用いたサンプリングポイントを○で示す
と、150秒目,6秒目及び69秒目でサンプリングを
行う。センサの抵抗値はCO30ppm〜300ppmの範囲
で約10倍変化し、また0秒目と69秒目とでは抵抗値
が約10倍異なる。これ以外にセンサ抵抗のばらつきや
周囲温湿度の変動等を加えると、AD変換の範囲は抵抗
値で約0.5〜500KΩとなる。そこでこの範囲でA
D変換ができるように、抵抗R1〜Rnを0.5KΩ〜
512KΩまで4倍ずつ6段階に変化させ、各サンプリ
ングタイミングの直前に抵抗ラダーへの出力VRlを監視
して、その値に応じて負荷抵抗を切り替える。VRlのA
D変換自体は1秒以内に行うことができ、その時の値に
応じて各サンプリングポイントでどの抵抗を用いるかを
決定すればよい。[Sampling and Logarithmic Conversion by Detector] FIG. 4 shows an average temperature waveform of ten sensors. If the sampling point used in the embodiment is indicated by a circle in the waveform of CO 100 ppm, sampling is performed at 150 seconds, 6 seconds, and 69 seconds. The resistance value of the sensor changes about 10 times in the range of 30 ppm to 300 ppm of CO, and the resistance value changes about 10 times between 0 second and 69 seconds. If a variation in sensor resistance, a change in ambient temperature and humidity, and the like are added to the above, the range of the AD conversion is about 0.5 to 500 KΩ in resistance value. So in this range A
The resistances R1 to Rn are set to 0.5 KΩ or more so that D conversion can be performed.
The output voltage VRl is changed to a resistance ladder immediately before each sampling timing, and the load resistance is switched according to the value. A of VRl
The D conversion itself can be performed within one second, and it is sufficient to determine which resistor is used at each sampling point according to the value at that time.
【0027】図5は、別の10個のセンサについて高温
域の初期の温度波形を拡大して示したものである。雰囲
気は0℃で相対湿度96%,20℃ 65%,50℃
40%,の3種類で、±2δ(δは標準偏差)の範囲と
平均値とを示してある。ガス濃度はCO100ppmであ
るが、周囲の温度や湿度の変動により抵抗値は各タイミ
ングで10倍弱変化している。また0秒目と6秒目の抵
抗値はほぼ等しく、例えば6秒目には0秒目と同じ負荷
抵抗を用いても良い。しかし好ましくは例えば148秒
目の信号で0秒目(もしくは高温域への移行前のサンプ
リングを確実にするため、149秒目)の抵抗値を決定
し、5秒目の抵抗値から6秒目の負荷抵抗を決定する。
同様に68秒目の抵抗値から69秒目の負荷抵抗を決定
する。FIG. 5 is an enlarged view of the initial temperature waveform in the high temperature region for another 10 sensors. Atmosphere is 0 ° C, relative humidity 96%, 20 ° C 65%, 50 ° C
40%, the range of ± 2δ (δ is the standard deviation) and the average value are shown. Although the gas concentration is 100 ppm CO, the resistance value changes slightly less than 10 times at each timing due to fluctuations in ambient temperature and humidity. Further, the resistance values at the 0th and 6th seconds are substantially equal. For example, the same load resistance as at the 0th second may be used at the 6th second. However, preferably, for example, a resistance value of 0 second (or 149 second to ensure sampling before shifting to a high temperature region) is determined from a signal of 148 seconds, and a resistance value of 6 seconds from a resistance value of 5 seconds is determined. Determine the load resistance of
Similarly, the load resistance at 69 seconds is determined from the resistance value at 68 seconds.
【0028】図6にサンプリングのアルゴリズムを示
す。時刻が148秒目に達すると、出力電圧をAD変換
し、この値が検出電圧Vc(VDDと同じ)の1/3〜2
/3の範囲内にあることを確認する。この範囲では、セ
ンサ抵抗と負荷抵抗との抵抗値の比は2:1〜1:2の
範囲内にある。出力電圧が正しければそのままで、正し
くない場合には負荷抵抗を切り替え、この範囲に収まる
ようにする。次に0秒目に達すると出力電圧をAD変換
し、AD変換した出力電圧VRlを用いて式(1)により0
秒目でのセンサ抵抗の対数を求める。同様に5秒に負荷
抵抗の値が正しいかどうかをチェックし、6秒目のセン
サ抵抗の対数を求める。さらに68秒目でも負荷抵抗の
値が正しいかどうかをチェックし、69秒目でセンサ抵
抗の対数を求める。FIG. 6 shows a sampling algorithm. When the time reaches 148 seconds, the output voltage is AD-converted, and this value is 1/3 to 2 of the detection voltage Vc (same as VDD).
Confirm that it is within the range of / 3. In this range, the ratio of the resistance value between the sensor resistance and the load resistance is in the range of 2: 1 to 1: 2. If the output voltage is correct, the output voltage is kept as it is. If the output voltage is not correct, the load resistance is switched so that the output voltage falls within this range. Next, when it reaches the 0th second, the output voltage is AD-converted, and the output voltage VRl obtained by AD conversion is used to obtain 0 according to the equation (1).
Find the logarithm of the sensor resistance at the second. Similarly, at 5 seconds, it is checked whether the value of the load resistance is correct, and the logarithm of the sensor resistance at 6 seconds is obtained. Further, it is checked whether the value of the load resistance is correct at the 68th second, and the logarithm of the sensor resistance is obtained at the 69th second.
【0029】 LnR=2−4VRl/Vc+LnRl (1) 式(1)のようにセンサ抵抗の対数を1次の項まで近似し
た場合、R/Rlが1で誤差が0、R/Rlが1/2また
は2で誤差は2%、R/Rlが1/3または3で誤差は
11%となる。実施例ではCO濃度を±20%以下の誤
差で検出することを目的とするので、±10%の誤差は
大きすぎる。そこでセンサ抵抗と負荷抵抗との比を0秒
目,6秒目,69秒目の3点で2〜1/2の範囲に保つ
ように抵抗ラダー5を制御する。LnR = 2−4VRl / Vc + LnRl (1) When the logarithm of the sensor resistance is approximated to the first-order term as in equation (1), R / Rl is 1 and the error is 0, and R / Rl is 1 / 2 or 2, the error is 2%, and R / Rl is 1/3 or 3, the error is 11%. In the embodiment, since the purpose is to detect the CO concentration with an error of ± 20% or less, the error of ± 10% is too large. Therefore, the resistance ladder 5 is controlled so that the ratio between the sensor resistance and the load resistance is maintained in the range of 2 to 1/2 at three points of 0 second, 6 seconds, and 69 seconds.
【0030】式(1)によるVRlからセンサ抵抗の対数へ
の変換は線形変換であり、極めて簡単な変換である。し
かしこれに伴って6個の負荷抵抗が必要であった。負荷
抵抗の数を例えば4個に減少させるには、R/Rlの範
囲を4〜1/4、より好ましくはルート8〜1/ルート
8の範囲に保つようにする。このためには3次の項まで
の変換が必要である。センサ抵抗の対数をVRlで級数展
開すると、2次の項は存在せず、3次の項までを加味し
たものが式(2)、(3)である。式(2),(3)を用いた場合、
R/Rlが1で変換誤差は0%、R/Rlが1/4または
4で変換誤差は4%、Rlが1/3または3で変換誤差
は2%である。そこで例えば抵抗R1〜Rnの値を16
倍ずつ、より好ましくは8倍もしくは9倍ずつ変化させ
る。そして例えば抵抗R1〜Rnの値を1KΩ,8K
Ω,64KΩ,512KΩの4種とする。このようにす
れば0.5〜1MΩの範囲を2%以下の誤差で対数に変
換することができる。 LnR=2x+2/3×x3+LnRl (2) x=1−2VRl/Vc (3)The conversion from VR1 to the logarithm of the sensor resistance according to the equation (1) is a linear conversion, which is a very simple conversion. However, six load resistors were required accordingly. In order to reduce the number of load resistors to, for example, four, the range of R / Rl is maintained in the range of 4 to 1/4, more preferably in the range of route 8 to 1 / route 8. For this purpose, conversion up to the third order term is necessary. When the logarithm of the sensor resistance is series-expanded by VRl, there are no second-order terms, and equations (2) and (3) take into account the third-order terms. When equations (2) and (3) are used,
When R / Rl is 1, the conversion error is 0%, when R / Rl is 1/4 or 4, the conversion error is 4%, and when Rl is 1/3 or 3, the conversion error is 2%. Therefore, for example, the values of the resistors R1 to Rn are set to 16
It is changed by a factor of two, more preferably by a factor of eight or nine. For example, when the values of the resistors R1 to Rn are 1KΩ and 8K
Ω, 64 KΩ, and 512 KΩ. In this way, the range of 0.5 to 1 MΩ can be converted to logarithm with an error of 2% or less. LnR = 2x + 2/3 × x 3 + LnRl (2) x = 1-2VRl / Vc (3)
【0031】[0031]
【ガス検出装置の調整】図1のガス検出装置の調整の手
続を図7に示す。なおこの時調整スイッチ23をオン
し、EEPROM20への基準信号の書き込みを可能に
しておく。CO検出装置を調整槽にセットするものとし
て説明すると、検出装置をセットした後、電源を投入し
て作動させる。そして例えば65ppmのCOを注入す
る。するとマイクロコンピュータ8はRAM30に書き
込むために、LnR0,LnR6,LnR69を発生する。こ
れをEEPROM20のカード51に記入させる。次い
でCO濃度を200ppmに増加し、同様の手順を行う。
さらにCO濃度を400ppmまで増加させる。このよう
に所定の手順でCO濃度を増加させれば、EEPROM
20に基準信号を書き込むことができる。そしてこの結
果、可変抵抗を調整して基準信号を記憶させる必要が無
く、調整作業が簡単になる。[Adjustment of Gas Detection Device] FIG. 7 shows a procedure for adjusting the gas detection device of FIG. At this time, the adjustment switch 23 is turned on to enable the writing of the reference signal to the EEPROM 20. In the following description, it is assumed that the CO detection device is set in the adjustment tank, and after the detection device is set, the power is turned on to operate. Then, for example, 65 ppm of CO is injected. Then, the microcomputer 8 generates LnR0, LnR6, and LnR69 for writing into the RAM 30. This is written on the card 51 of the EEPROM 20. The same procedure is then followed, increasing the CO concentration to 200 ppm.
Further, the CO concentration is increased to 400 ppm. If the CO concentration is increased in a predetermined procedure as described above, the EEPROM
20 can be written with a reference signal. As a result, there is no need to adjust the variable resistance to store the reference signal, and the adjustment operation is simplified.
【0032】ここではCO検出装置を調整槽にセットす
るものとしたが、センサSのみをセットしても良い。そ
してセンサSの抵抗値を例えば12ビット程度のADコ
ンバータでAD変換し、パーソナルコンピュータ等に記
録させ、これをEEPROM20に書き込んでも良い。
この場合にはセンサSはCO検出装置には組み込まれて
おらず、センサSをEEPROM20とセットにして取
り扱い、これらを別途に組み立てたCO検出装置に組み
付ける。センサSとEEPROM20以外の部分は、通
常の電子回路と全く同様に扱え、ガスセンサについて経
験のないメーカーでもCO検出装置を組み立てることが
できる。Here, the CO detector is set in the adjustment tank, but only the sensor S may be set. Then, the resistance value of the sensor S may be A / D converted by, for example, an AD converter of about 12 bits, recorded in a personal computer or the like, and written in the EEPROM 20.
In this case, the sensor S is not incorporated in the CO detection device, but the sensor S is handled as a set with the EEPROM 20, and these are assembled into a separately assembled CO detection device. The parts other than the sensor S and the EEPROM 20 can be handled in exactly the same manner as a normal electronic circuit, and even a manufacturer having no experience with a gas sensor can assemble a CO detection device.
【0033】[0033]
【ガスセンサ信号の相関】図8にTGS203の温度、
(サーミスタで測定した金属酸化物半導体の表面温度,
センサ数1個)を示す。[Correlation of gas sensor signal] FIG.
(Surface temperature of metal oxide semiconductor measured by thermistor,
(1 sensor number).
【0034】図9〜図12に、CO100ppm中でのT
GS203のセンサ信号の抵抗値の相関を示す。通電期
間は、途中2回の放置を挟んで、約40日間である。セ
ンサの抵抗値は150秒周期の50点で3秒間隔で測定
した。用いたTGS203は10個で、図19〜図26
に用いたサンプル中の良品20個の内の、ランダムに抽
出した10個のデータである。図9は0秒目との抵抗値
の相関を、図10は6秒目との抵抗値の相関を、図11
は60秒目との抵抗値の相関を、図12は69秒目との
抵抗値の相関を示す。図13〜図15に同じ10個のサ
ンプルに付いて、0秒目値と他のタイミングとの抵抗値
の相関を示し、図13はCO300ppm中で、図14は
CO100ppm+H2300ppm中で、図15はH2100
0ppm中である。FIGS. 9 to 12 show T in CO at 100 ppm.
The correlation of the resistance value of the sensor signal of GS203 is shown. The energization period is about 40 days after two times of leaving. The resistance value of the sensor was measured at 3 points at 50 points in a 150 second cycle. The number of TGS 203 used was 10, and FIG.
10 are randomly extracted data out of 20 non-defective products in the sample used in (1). 9 shows the correlation of the resistance value with the 0th second, FIG. 10 shows the correlation of the resistance value with the 6th second, and FIG.
Shows the correlation of the resistance value with the 60th second, and FIG. 12 shows the correlation of the resistance value with the 69th second. 13 to 15 show the correlation of the resistance value between the 0th second value and other timings for the same 10 samples. FIG. 13 shows the result in 300 ppm CO, FIG. 14 shows the result in 100 ppm CO + 300 ppm H2, and FIG.
It is in 0 ppm.
【0035】低温域の後期(120秒〜150秒)の相
関は強く(図9)、高温域の初期(6秒)は低温域の後
期から高温域の中期(30秒)と相関が強く(図1
0)、高温域の後期(60秒)は高温域の中期(30
秒)と強く相関するが低温域の後期との相関は弱い(図
11)。また低温域の初期(69秒)は60秒や90秒
と相関する(図12)。CO300ppm中でもCO10
0ppm中と相関の傾向は変わらないが(図13)、CO
と水素との混合ガスでは相関の傾向は変わり(図1
4)、水素中でも相関の傾向が異なる(図15)。The correlation between the late stage of the low temperature region (120 seconds to 150 seconds) is strong (FIG. 9), and the early stage of the high temperature region (6 seconds) has a strong correlation from the latter stage of the low temperature region to the middle stage of the high temperature region (30 seconds). FIG.
0), the late stage (60 seconds) of the high temperature region is the middle stage (30 seconds) of the high temperature region.
Second), but the correlation with the latter part of the low temperature region is weak (FIG. 11). Further, the initial period (69 seconds) of the low temperature region correlates with 60 seconds or 90 seconds (FIG. 12). CO10 even in CO300ppm
Although the correlation tendency does not change from that in 0 ppm (FIG. 13),
The tendency of the correlation changes with the mixed gas of hydrogen and hydrogen (Fig. 1
4) The tendency of the correlation is different even in hydrogen (FIG. 15).
【0036】ドリフトに伴う抵抗値の変化の相関を図1
6に示す。ガスはCO100ppmで、通電開始から3日
目のCO100ppm中の0秒を基準とする他者相関であ
る。通電開始3日目に、0秒目の抵抗値と6秒目の抵抗
値は強い相関があるが、この相関はその後も崩れない。
0秒目の抵抗値は測定日を変えても相関係数はほぼ1な
ので、通電開始3日目の6秒目の抵抗値は、その後の0
秒目の抵抗値と強く相関する。従って、通電開始3日目
の6秒目の抵抗値で、その後の0秒目の抵抗値のドリフ
トを補正できる。FIG. 1 shows the correlation between the change in the resistance value due to the drift.
6 is shown. The gas is 100 ppm of CO, and the correlation with the others is based on 0 second in 100 ppm of CO on the third day from the start of energization. On the third day from the start of energization, the resistance value at 0 seconds and the resistance value at 6 seconds have a strong correlation, but this correlation does not break down thereafter.
Since the correlation coefficient of the 0 second resistance value is almost 1 even if the measurement date is changed, the 6 second resistance value on the third day of the energization start is 0%.
It strongly correlates with the resistance value at the second. Accordingly, the drift of the resistance value at the 0th second thereafter can be corrected by the resistance value at the 6th second on the third day of energization.
【0037】図17に抵抗値の相関を用いた際の補正用
信号の決定基準を示し、図18にドリフトに伴う抵抗値
の変化分の相関を用いた際の補正用信号の決定基準を示
す。図17では、0秒目の抵抗値をTGS203の従来
の用い方に従いCO検出用の主信号とする。通電開始3
日目,あるいは7日目等の適当な日に各タイミングtに
ついて、CO中での抵抗値を測定し、抵抗値の平均と分
散とを各タイミングついて求める。次に0秒目とt秒目
との抵抗値の他者相関Cを求め、相関が強く、CO感度
が低く、妨害ガスである水素への感度が類似したタイミ
ングの信号を補正用の信号とする。FIG. 17 shows the criterion for determining the correction signal when the correlation of the resistance value is used, and FIG. 18 shows the criterion for determining the correction signal when the correlation for the change in the resistance value due to the drift is used. . In FIG. 17, the resistance value at the 0th second is used as a main signal for CO detection in accordance with the conventional use of the TGS 203. Energization start 3
At an appropriate day such as the day or the seventh day, at each timing t, the resistance value in CO is measured, and the average and variance of the resistance value are obtained for each timing. Next, the other correlation C of the resistance value between the 0th and tth seconds is obtained, and a signal having a strong correlation, a low CO sensitivity, and a timing similar in sensitivity to hydrogen as an interfering gas is used as a correction signal. I do.
【0038】図18の処理も同様で、0秒目の抵抗値を
TGS203の従来の用い方に従いCO検出用の主信号
とする。例えば40日〜1年程度の期間に渡って、CO
中での抵抗値を測定し、同じタイミングでの抵抗値の初
期値(3日目あるいは7日目)との比の平均と分散とを
求める。次に0秒目とt秒目との抵抗値の他者相関Cを
求め、相関が強く、CO感度が低く、妨害ガスである水
素への感度が類似したタイミングの信号を補正用の信号
とする。The same applies to the processing in FIG. 18, and the resistance value at the 0th second is used as the main signal for CO detection in accordance with the conventional method of using the TGS 203. For example, over a period of about 40 days to one year, CO
The average value and the variance of the ratio of the resistance value to the initial value (day 3 or day 7) at the same timing are determined. Next, the other correlation C of the resistance value between the 0th and tth seconds is obtained, and a signal having a strong correlation, a low CO sensitivity, and a timing similar in sensitivity to hydrogen as an interfering gas is used as a correction signal. I do.
【0039】[0039]
【ガスセンサ信号のドリフト】図19〜図24にセンサ
抵抗のドリフト特性を示す。用いたサンプルは45個
で、良品(20個),2年以上放置したサンプル(8
個),不良品(7個),いったんCO警報器に組み込ん
だ後回収したサンプル(10個)を含んでいる。各図の
横軸は0秒目のセンサ抵抗を対数目盛りで示し、縦軸は
3秒目(図19),6秒目(図20),12秒目(図2
1),30秒目(図22),60秒目(図23),12
0秒目(図24)のセンサ抵抗を同様に対数目盛りで示
している。そして横軸が1は0秒目のCO100ppm中
での基準信号(通電開始3日目)で、縦軸が1は6秒目
等でのCO100ppmでの基準信号(通電開始3日目)
である。図19〜図24はCO100ppm中での通電開
始3日目の基準信号で正規化してある。[Drift of Gas Sensor Signal] FIGS. 19 to 24 show drift characteristics of the sensor resistance. The samples used were 45, good (20), and samples left for more than 2 years (8
Pcs), defective products (7 pcs), and samples (10 pcs) collected after being assembled in the CO alarm. In each figure, the horizontal axis indicates the sensor resistance at 0 second on a logarithmic scale, and the vertical axes indicate the 3rd second (FIG. 19), the 6th second (FIG. 20), and the 12th second (FIG. 2).
1), 30 seconds (FIG. 22), 60 seconds (FIG. 23), 12
The sensor resistance at the 0th second (FIG. 24) is similarly shown on a logarithmic scale. The horizontal axis 1 is a reference signal in CO 100 ppm at 0 second (third day of energization start), and the vertical axis is 1 is a reference signal at 100 ppm CO at 6 seconds and the like (third day of energization start).
It is. 19 to 24 are normalized by the reference signal on the third day from the start of energization in 100 ppm of CO.
【0040】図の各点は5週間の通電に伴う測定点を示
し、45個のTGS203を5週間使用すると、センサ
は2倍程度、高低抵抗化してゆく。図20では、高抵抗
化は6秒目等と0秒目との2次元位相空間で傾きが1の
狭い直線上に集中している。この軸をドリフト軸と呼ぶ
ことにする。なおCO30ppm中や300ppm中でドリフ
ト軸が明瞭でないのは、TGS203の濃度依存性の分
散のためである。即ち濃度依存性が均一でなく、CO3
0ppm中や300ppm中での初期点が1点に揃わないの
で、初期点の分散のためドリフト軸が不明瞭である。ま
たCO30ppm,100ppm,300ppmの3点を結んだ
直線を濃度軸と呼ぶことにする。そしてTGS203の
初期の特性はこの濃度軸上にあり、使用と共に濃度軸は
ドリフト軸の方向に沿って平行移動していく。また図1
9〜図24を通してサンプルの一部は低抵抗化が始まっ
ており、これはCO100ppm中の座標(位相点)が原
点よりも左下の第4象限にあるものが存在することに示
されている。そして低抵抗化のドリフトは高抵抗化の場
合と同様にドリフト軸に沿って進行している。Each point in the figure indicates a measurement point associated with 5 weeks of energization. If 45 TGS 203 are used for 5 weeks, the resistance of the sensor will be about twice as high and low. In FIG. 20, the increase in resistance is concentrated on a narrow straight line with a slope of 1 in a two-dimensional phase space of 6 seconds and the like and 0 seconds. This axis is called the drift axis. The reason why the drift axis is not clear at 30 ppm or 300 ppm of CO is due to the dispersion of the concentration dependency of TGS203. That is, the concentration dependency is not uniform and CO3
Since the initial points in 0 ppm and 300 ppm are not aligned at one point, the drift axis is unclear due to dispersion of the initial points. A straight line connecting three points of 30 ppm, 100 ppm, and 300 ppm of CO will be referred to as a concentration axis. The initial characteristics of the TGS 203 are on this concentration axis, and the concentration axis moves parallel to the direction of the drift axis with use. FIG.
9 to FIG. 24, the resistance of a part of the sample has started to be lowered, which indicates that the coordinate (phase point) in 100 ppm of CO exists in the fourth quadrant lower left from the origin. The drift for lowering the resistance proceeds along the drift axis as in the case of the higher resistance.
【0041】抵抗値の谷の3秒目の信号と0秒目の信号
の組合せ(図19)では、ドリフト軸と濃度軸は近接
し、ドリフト補正は困難である。これは3秒目の信号
(100℃強)は低温域の信号(80℃付近)とCO感
度が類似するためである。In the combination of the signal at the 3rd second of the valley of the resistance value and the signal at the 0th second (FIG. 19), the drift axis and the concentration axis are close to each other, and it is difficult to correct the drift. This is because the signal at the third second (more than 100 ° C.) has similar CO sensitivity to the signal in the low temperature range (around 80 ° C.).
【0042】図21でも図20と同様のドリフト軸が見
られるが、ドリフト軸の周囲の位相点の分布は広がり、
これは0秒目の信号のドリフトと12秒目の信号のドリ
フトの相関が、0−6秒目の場合に比べて弱いことを示
している。図22の30−0秒目の特性では、ドリフト
軸の周囲の分布はより広く、CO300ppmでCO10
0ppmとの区別が難しい点が生じている。図23の60
−0秒目の特性では、CO300ppm中で最もドリフト
したものでは、CO100ppmでの基準点にほぼ重なろ
うとしているものが存在する。図24の120秒目−0
秒目の特性では、0秒目の信号と120秒目の信号が酷
似した信号であるため、ドリフト軸も濃度軸も共通で、
かつ全ての位相点が1本の直線の周囲に集まっている。FIG. 21 also shows a drift axis similar to that of FIG. 20, but the distribution of the phase points around the drift axis is widened.
This indicates that the correlation between the drift of the signal at 0 seconds and the drift of the signal at 12 seconds is weaker than that at 0-6 seconds. In the characteristics at the 30th to 0th seconds in FIG. 22, the distribution around the drift axis is wider,
It is difficult to distinguish from 0 ppm. 23 in FIG.
Among the characteristics at −0 second, some of the ones that drifted the most at 300 ppm of CO tend to almost overlap the reference point at 100 ppm of CO. 24th second-0 in FIG.
In the characteristics of the second, since the signal at the second and the signal at the 120th are very similar, both the drift axis and the concentration axis are common,
And all the phase points are gathered around one straight line.
【0043】これらのことからドリフト補正に用いるこ
とができるのは、高温域の初期の信号は、例えば4〜2
0秒目の信号、好ましくは5〜15秒目の信号とする。
そして組み合わせる相手は低温域の後期の信号で、例え
ば90〜150秒目,好ましくは120〜150秒目の
信号である。図19〜図23のいずれでも濃度軸とドリ
フト軸は斜交し、直交座標系でCO濃度とドリフトとに
対応する2軸を求めることができない。仮にドリフト軸
と直交する濃度軸を求めることができるとすると、それ
はドリフトの影響を受けない軸が存在し、その軸上の座
標はガス濃度のみで定まることを意味する。しかしなが
らこのような軸を見つけることはできなかった。From these facts, it can be used for drift correction that the initial signal in the high temperature range is, for example, 4 to 2
A signal at the 0th second, preferably a signal at the 5th to 15th seconds.
The other party to be combined is a signal in the latter half of the low temperature range, for example, a signal at the 90th to 150th seconds, preferably at the 120th to 150th seconds. In any of FIGS. 19 to 23, the concentration axis and the drift axis are oblique, and two axes corresponding to the CO concentration and the drift cannot be obtained in the orthogonal coordinate system. If a concentration axis orthogonal to the drift axis can be obtained, it means that there is an axis that is not affected by the drift, and the coordinates on that axis are determined only by the gas concentration. However, no such axis could be found.
【0044】[0044]
【負の水素感度】各図にはこれ以外にCO100ppmと
水素300ppmの混合ガスの挙動や、水素1000ppm中
での挙動を示した。図20から明らかなように、水素に
対しては感度は僅かに負になっている。例えば図20の
CO100ppm+水素300ppmの各点をドリフト軸に沿
って平行移動させ、濃度軸との交点を求めると、得られ
る濃度範囲はCO80ppm〜60ppmである。一方CO1
00ppm中での5週間の各点の分布は狭く、ドリフト軸
に沿って平行移動させ、濃度軸との交点を求めると、分
布範囲はCO80〜120ppm程度となる。水素に対す
る感度が負になるのは、6秒目の信号の方が0秒目の信
号よりも水素感度が高いためである。そこでこれを補正
するため、0秒目と69秒目の信号からなる位相空間を
用いる。[Negative hydrogen sensitivity] In each figure, the behavior of a mixed gas of 100 ppm of CO and 300 ppm of hydrogen and the behavior in 1000 ppm of hydrogen are also shown. As is clear from FIG. 20, the sensitivity is slightly negative for hydrogen. For example, when each point of 100 ppm of CO + 300 ppm of hydrogen in FIG. 20 is translated along the drift axis and the intersection with the concentration axis is obtained, the obtained concentration range is 80 ppm to 60 ppm of CO. On the other hand, CO1
The distribution of each point in 00 ppm for 5 weeks is narrow, and when the point of intersection with the concentration axis is determined by translating along the drift axis, the distribution range is about 80 to 120 ppm of CO. The reason why the sensitivity to hydrogen is negative is that the signal at 6 seconds has a higher hydrogen sensitivity than the signal at 0 seconds. Therefore, in order to correct this, a phase space consisting of signals at the 0th and 69th seconds is used.
【0045】この場合の同様の5週間の通電データを図
25に示す。図25から明らかなように、水素が発生す
ると69秒目の抵抗値は著しく減少し、濃度軸から極端
に離れた場所にある。そこで濃度軸から図25の下方向
に下降する距離をもって水素濃度を表す信号とする。FIG. 25 shows the same energization data for 5 weeks in this case. As is clear from FIG. 25, when hydrogen is generated, the resistance value at the 69th second is significantly reduced, and is located at a place extremely far from the concentration axis. Therefore, a signal representing the hydrogen concentration is defined as the distance from the concentration axis in the downward direction in FIG.
【0046】このような水素検出信号は正確なものでは
なく、図25では斜交座標系を用いていない。しかし小
さな負の水素感度の補正用なので、定量性のない水素検
出信号でも用いることができる。そして水素感度の補正
では、図20で僅かに負になっている水素感度を0に戻
す、即ちCOのみに極めて選択的なCO検出装置を設計
する、あるいはTGS203の本来の特性のようにCO
対水素の相対感度を10:1となるように補正する、の
2通りが考えられる。これらのいずれを選ぶかは、CO
検出装置の設計方針の問題である。Such a hydrogen detection signal is not accurate, and FIG. 25 does not use an oblique coordinate system. However, since it is used for correcting a small negative hydrogen sensitivity, even a hydrogen detection signal having no quantitative property can be used. Then, in the correction of the hydrogen sensitivity, the hydrogen sensitivity slightly negative in FIG. 20 is returned to 0, that is, a CO detection device which is extremely selective only for CO is designed, or the CO characteristic is changed like the original characteristic of the TGS 203.
Correcting the relative sensitivity of hydrogen to 10: 1 can be considered. Which of these to choose depends on the CO
This is a matter of the design policy of the detection device.
【0047】[0047]
【温湿度依存性】図26は40個のTGS203につい
て、0℃相対湿度96%と20℃,65%,50℃40
%での温湿度依存性を、CO30ppm,100ppm,30
0ppmについて示したものである。0℃では20℃や5
0℃とは別のライン上に位相点が存在し、絶対湿度の低
下を検出することができる。なおTGS203の温湿度
依存性は周知のように、主として絶対湿度依存性であ
る。[Temperature and Humidity Dependence] FIG. 26 shows the relative humidity of 96% at 20 ° C., 40% at 65 ° C.
% Dependence on temperature and humidity in CO30ppm, 100ppm, 30ppm
This is for 0 ppm. 20 ° C or 5 at 0 ° C
A phase point exists on a line different from 0 ° C., and a decrease in absolute humidity can be detected. As is well known, the TGS 203 mainly depends on the absolute humidity.
【0048】図27に別の10個のTGS203(使用
開始から2カ月弱経過)について、CO100ppm中で
の0℃,相対湿度約96%と、20℃相対湿度65%と
の間の抵抗値の比を示す。横軸は温度変化でのタイミン
グである。温湿度依存性の大部分は0秒目と6秒目との
ドリフト補正の副作用として補正される。FIG. 27 shows another ten TGS 203 (less than 2 months from the start of use) having a resistance value between 0 ° C., relative humidity of about 96% and 20 ° C. relative humidity of 65% in 100 ppm CO. Shows the ratio. The horizontal axis represents the timing of the temperature change. Most of the temperature-humidity dependence is corrected as a side effect of drift correction at the 0th and 6th seconds.
【0049】図28に同じ10個のTGS203(図2
7と同じサンプル)について、CO100ppm中での5
0℃,相対湿度約40%と、20℃相対湿度65%との
間の抵抗値の比を示す。温湿度依存性の大部分は0秒目
と6秒目とのドリフト補正の副作用として補正される。FIG. 28 shows the same 10 TGSs 203 (FIG. 2).
5) in 100 ppm CO.
It shows the ratio of resistance values between 0 ° C. and about 40% relative humidity and 20 ° C. and 65% relative humidity. Most of the temperature-humidity dependence is corrected as a side effect of drift correction at the 0th and 6th seconds.
【0050】図27,図28は高温域の初期で温湿度依
存性が小さくなることを示しており、低温域よりも温湿
度依存性が小さいことが問題である。温湿度補正のため
に高温域初期での温湿度依存性を増大させるには、例え
ば10〜15秒目の信号が信号が好ましく、6秒目付近
の信号を用いてドリフトを正確に補正するか、10〜1
5秒目の信号を用いて温湿度依存性の補正に重点を置く
かはトレードオフの問題である。FIGS. 27 and 28 show that the temperature / humidity dependency is small in the initial stage of the high temperature range, and there is a problem that the temperature / humidity dependency is smaller than that in the low temperature range. In order to increase the temperature / humidity dependence in the early high temperature range for temperature / humidity correction, for example, a signal at 10 to 15 seconds is preferable, and the drift is accurately corrected using a signal at around 6 seconds. , 10-1
It is a matter of trade-off whether to emphasize the correction of the temperature and humidity dependency using the signal at the 5th second.
【0051】[0051]
【ガスセンサの情報次元】ガスセンサが含む独立した信
号の数を情報次元と呼ぶことにする。情報次元はエント
ロピーを基礎として情報科学で明確に定義された概念で
あるが、ここでは単に独立した信号の数を定性的に求め
て情報次元と呼ぶ。既に述べたように、0秒目の信号と
6秒目の信号との組合せでCO濃度とドリフトの程度と
を知ることができ、0秒目の信号と69秒目の信号の組
合せでH2濃度を知ることができた。[Information dimension of gas sensor] The number of independent signals included in the gas sensor will be referred to as information dimension. The information dimension is a concept clearly defined in the information science on the basis of entropy, but here, the number of independent signals is simply qualitatively determined and called the information dimension. As described above, the CO concentration and the degree of drift can be known from the combination of the signal at the 0th second and the signal at the 6th second, and the H2 concentration can be determined from the combination of the signal at the 0th second and the signal at the 69th second. I was able to know.
【0052】TGS203の温度波形を用いると、C
O,ドリフト,水素,絶対湿度(図26)の4種の信号
を得ることができる。一方TGS203の温度波形の相
関(図9〜図16)からは、低温域の後期,高温域の初
期,高温域の後期,低温域の初期の4つに温度波形を分
類できることが分かっている。またTGS203の特性
に影響するのは、CO,水素,絶対湿度,ドリフトの4
者である。これらのことからTGS203の温度波形は
CO,水素,絶対湿度,ドリフトの4つの信号を含んで
おり、TGS203の温度波形の情報次元は4次元であ
るといえる。Using the temperature waveform of TGS203, C
Four signals of O, drift, hydrogen, and absolute humidity (FIG. 26) can be obtained. On the other hand, from the correlation of the temperature waveforms of the TGS 203 (FIGS. 9 to 16), it is known that the temperature waveforms can be classified into four stages: a late stage of a low temperature region, an early stage of a high temperature region, a late stage of a high temperature region, and an early stage of a low temperature region. The characteristics of the TGS 203 are affected by four factors: CO, hydrogen, absolute humidity, and drift.
Person. From these facts, it can be said that the temperature waveform of the TGS 203 includes four signals of CO, hydrogen, absolute humidity, and drift, and the information dimension of the temperature waveform of the TGS 203 is four-dimensional.
【0053】そしてこれらの4次元の情報次元の信号
は、 1) CO検出用の主信号、例えば90秒〜150秒,よ
り好ましくは120秒〜150秒の信号と、 2) ドリフト補正用の信号,例えば4〜20秒,より好
ましくは5〜15秒の信号、 3) 低温域初期の水素検出用の信号と、 4) 高温域初期の信号と高温域後期の信号の組合せによ
るサーミスタ無しでの絶対湿度の補正用の信号、 の4種の信号として使用できる。These four-dimensional information-dimensional signals are: 1) a main signal for detecting CO, for example, a signal for 90 seconds to 150 seconds, more preferably 120 seconds to 150 seconds, and 2) a signal for drift correction. For example, a signal for 4 to 20 seconds, more preferably 5 to 15 seconds, 3) a signal for detecting hydrogen in the early low temperature range, and 4) a combination of a signal in the early high temperature range and a late signal in the high temperature range without thermistor. It can be used as four kinds of signals, for correction of absolute humidity.
【0054】TGS203の情報次元が4次元であるこ
とは、相関解析とクラスター解析で裏付けられている。
そして相関解析は高温域初期の信号をドリフト補正用の
信号とすべきことを示している。主信号となる低温域後
期の信号と相関の強いのは高温域初期の信号で、高温域
の後期の信号とは相関が弱い。また低温域初期の信号と
低温域後期の信号は相関が弱く、かつ低温域初期の信号
は水素に選択的でドリフト補正用の信号とはならない。The fact that the information dimension of the TGS 203 is four-dimensional is supported by correlation analysis and cluster analysis.
The correlation analysis indicates that the signal in the high temperature range should be used as a signal for drift correction. The signal at the early stage of the high temperature region has a strong correlation with the signal at the late stage of the low temperature region, which is the main signal, and has a weak correlation with the signal at the latter stage of the high temperature region. In addition, the signal at the early stage of the low-temperature region and the signal at the latter stage of the low-temperature region have a weak correlation, and the signal at the early stage of the low-temperature region is selective to hydrogen and does not become a signal for drift correction.
【0055】図4の波形データは、高温域初期の例えば
3秒目では0秒目とCO感度が酷似し、その後は水素感
度が増すことを示している。従ってドリフト補正用の信
号は例えば4〜20秒、好ましくは5〜15秒目の信号
に限られる。即ち3秒目では検出対象ガスでの特性が類
似し過ぎ、20秒を越えると水素感度の差が著しくな
る。このことは図19〜図22のクラスター解析で裏付
けられ、6〜12秒目付近に最適点があることが判明す
る。The waveform data in FIG. 4 indicates that the CO sensitivity is very similar to that at the 0th second, for example, at the 3rd second at the beginning of the high temperature range, and thereafter the hydrogen sensitivity increases. Therefore, the signal for drift correction is limited to a signal of, for example, 4 to 20 seconds, preferably 5 to 15 seconds. That is, the characteristics of the gas to be detected are too similar at the third second, and the difference of the hydrogen sensitivity becomes remarkable after more than 20 seconds. This is supported by the cluster analysis in FIGS. 19 to 22, and it is found that there is an optimum point around the 6th to 12th seconds.
【0056】[0056]
【ドリフト補正】図29にドリフト補正の原理を示す。
図の実線は濃度軸、破線はドリフト軸である。そして6
5ppm、200ppm,400ppmの3点での基準信号がE
EPROM20に記録されている。測定により、LnR0
とLnR6の2つの次元での位相空間上の点(a,b)が
定まる。またこの位相空間での各基準信号の座標を図2
9のように定める。そして点(a,b)からドリフト軸
に沿って平行移動させ、濃度軸との交点の座標を(e,
f)とする。座標(e,f)が求まれば、濃度軸上の位
置からCO濃度を求めることができる。そして座標
(a,b)から座標(e,f)への移動は、ドリフト軸
に平行な濃度軸への射影である。[Drift correction] FIG. 29 shows the principle of drift correction.
The solid line in the figure is the concentration axis, and the broken line is the drift axis. And 6
The reference signal at three points of 5 ppm, 200 ppm and 400 ppm is E
It is recorded in the EPROM 20. By measurement, LnR0
And a point (a, b) on the phase space in two dimensions of LnR6. The coordinates of each reference signal in this phase space are shown in FIG.
Determined as 9 Then, the object is translated from the point (a, b) along the drift axis, and the coordinates of the intersection with the concentration axis are (e,
f). Once the coordinates (e, f) are obtained, the CO concentration can be obtained from the position on the concentration axis. The movement from the coordinates (a, b) to the coordinates (e, f) is a projection onto the density axis parallel to the drift axis.
【0057】なお射影の手法は任意で、例えば図29の
位相空間上にCO濃度を示すデータを書き込んで2次元
のマップとし、マップ上の位置からCO濃度を求めても
良い。そしてマップが粗く各座標に直接対応するデータ
が無いことは、マップの各点間の補間で処理すれば良
い。あるいは各基準点(l,m),(e,f),(q,
r)からドリフト軸に平行な3本の線を引き、各線上に
CO濃度に対する補正値を書き込み、濃度軸上では補正
値は1とする。そしてドリフトによる高抵抗化を補正す
るように、補正値を定める。そして測定点を通るように
濃度軸を平行移動させ、両側の2つの補正線との交点を
求め、各補正線での補正値を求めて補間する。このよう
にして求めた補正値で0秒目のセンサ抵抗の対数を補正
し、CO濃度に換算する。これらの変形例では、射影の
制限を補正線での補正値やマップの値に反映させること
ができ、射影への微細な操作が容易である。The projection method may be arbitrarily selected. For example, data indicating the CO concentration may be written in the phase space of FIG. 29 to form a two-dimensional map, and the CO concentration may be obtained from the position on the map. The fact that the map is coarse and there is no data directly corresponding to each coordinate may be processed by interpolation between each point of the map. Alternatively, each reference point (l, m), (e, f), (q,
From r), three lines parallel to the drift axis are drawn, and a correction value for the CO concentration is written on each line, and the correction value is set to 1 on the concentration axis. Then, a correction value is determined so as to correct the increase in resistance due to the drift. Then, the density axis is moved in parallel so as to pass through the measurement point, the intersection point between the two correction lines on both sides is obtained, and the correction value at each correction line is obtained and interpolated. The logarithm of the sensor resistance at the 0th second is corrected by the correction value thus obtained, and is converted into a CO concentration. In these modified examples, the restriction of the projection can be reflected on the correction value of the correction line and the value of the map, and a fine operation on the projection is easy.
【0058】[0058]
【信号処理】図31〜図36に、CO濃度の算出を示
す。図31はメインループを示し、最初に測定データか
ら、a,b,cの3つの変数を定義する。次に温度補正
のサブルーチン(図32)、ドリフト補正のサブルーチ
ン(図33),水素補正のサブルーチン(図34)によ
りCO濃度を求める。最後にCO濃度から血中COヘモ
グロビン濃度COHbを求める。なおCOHbの初期値
はリセット時には0としておく。この変換自体は既に周
知で、k2,k3,k4は定数で、k4はここでは検出
下限以下のCO30ppm程度に相当する値とし、CO濃
度が30ppm以下では検出を行わないようにする。[Signal Processing] FIGS. 31 to 36 show the calculation of the CO concentration. FIG. 31 shows a main loop. First, three variables a, b, and c are defined from measurement data. Next, the CO concentration is determined by a temperature correction subroutine (FIG. 32), a drift correction subroutine (FIG. 33), and a hydrogen correction subroutine (FIG. 34). Finally, the blood CO hemoglobin concentration COHb is determined from the CO concentration. The initial value of COHb is set to 0 at the time of reset. This conversion itself is already known, and k2, k3, and k4 are constants. Here, k4 is a value corresponding to about 30 ppm of CO, which is equal to or less than the lower limit of detection, and detection is not performed when the CO concentration is 30 ppm or less.
【0059】[0059]
【温度補正サブルーチン】図32の温度補正サブルーチ
ンでは、サーミスタ42から周囲温度Tを求める。プロ
グラムメモリー34には、周囲温度からa,b,cに対
する補正常数T1,T2,T3の参照表が用意され、こ
れを読み出してa,b,cに加算する。[Temperature Correction Subroutine] In the temperature correction subroutine of FIG. A reference table of correction constants T1, T2, and T3 for a, b, and c from the ambient temperature is prepared in the program memory 34, and is read and added to a, b, and c.
【0060】[0060]
【ドリフト補正サブルーチン】図33にドリフト補正サ
ブルーチンを示す。ドリフト軸の傾きは1で、(e−
a)と(f−b)は等しい。このため f=e+(b−
a) が成立する。そこでe,fの2つの未知数の1つ
を消去できる。次に、n−pがa−b以上かどうかチェ
ックする。この条件が不成立の場合、測定点は200pp
mからドリフト軸を延ばした際にドリフト軸の下側にあ
り、検出濃度は200ppm以下である。次に点(e,
f)は65ppmと200ppmの2つの基準信号で定まる線
分を内分している。このことからe,fは65ppmや2
00ppmでの基準信号の座標n,p,q,rと1つの関
係式に拘束され、これらを用いて座標eを解くことがで
きる。[Drift Correction Subroutine] FIG. 33 shows a drift correction subroutine. The inclination of the drift axis is 1, and (e-
a) and (fb) are equal. Therefore, f = e + (b−
a) is established. Therefore, one of the two unknowns e and f can be deleted. Next, it is checked whether np is equal to or larger than ab. If this condition is not satisfied, the measurement point is 200pp
When the drift axis is extended from m, it is below the drift axis, and the detected concentration is 200 ppm or less. Next, the point (e,
f) internally divides a line segment defined by two reference signals of 65 ppm and 200 ppm. From this, e and f are 65 ppm or 2 ppm.
The coordinates n, p, q, and r of the reference signal at 00 ppm are constrained by one relational expression, and the coordinates e can be solved using these.
【0061】求めたeには射影の制限がなく、濃度軸か
ら極端に離れた点でも、濃度軸の近傍でも同様に射影し
ている。また濃度軸の上下で射影は対称である。これに
対して、濃度軸から高抵抗側へのドリフトが著しいほ
ど、射影を制限してドリフトの一部のみを補正するよう
にすることが好ましい。また濃度軸から低抵抗側にドリ
フトした場合には、高抵抗側へのドリフトよりも補正を
控え目にすることが好ましい。さらにCO30ppm程度
でのドリフト軸の傾きは、100ppm以上でのドリフト
軸の傾きよりも僅かに大きく、濃度毎にドリフト軸の傾
きを変えるのが好ましい。また30ppmのCOは無害で
検出対象に含まれず、このような低濃度域のCOに対し
てドリフト補正を行う必要が無い。そこで図35に示す
ように、濃度軸の上下で補正を非対称にし、かつ濃度軸
からの距離が増すとドリフトを部分的に補正することが
好ましい。There is no limitation on the projection of the obtained e, and the projection is similarly performed at a point extremely distant from the density axis or near the density axis. The projection is symmetrical above and below the density axis. On the other hand, as the drift from the concentration axis to the high resistance side becomes remarkable, it is preferable to limit the projection and correct only a part of the drift. In addition, when drifting from the concentration axis to the low resistance side, it is preferable to make correction more conservative than drift to the high resistance side. Further, the inclination of the drift axis at about 30 ppm of CO is slightly larger than the inclination of the drift axis at 100 ppm or more, and it is preferable to change the inclination of the drift axis for each concentration. Also, 30 ppm of CO is harmless and is not included in the detection target, and there is no need to perform drift correction on CO in such a low concentration range. Therefore, as shown in FIG. 35, it is preferable to make the correction asymmetric above and below the density axis, and to partially correct the drift as the distance from the density axis increases.
【0062】マップを用いる場合やドリフト軸をCO濃
度毎に複数容易する場合は、上記の処理はマップ内のデ
ータの操作やドリフト軸の傾きの操作で処理できる。し
かし実施例では、eを求めた後にプログラムメモリー3
4に記憶させた2次元の参照表で、上記の処理を行う。
この参照表の見出しは(e−a)とeで、(e−a)は
濃度軸からの距離に比例する。また(e−a)の符号
は、濃度軸の上下で反転する。eの値はCO濃度を示
し、低濃度域の処理か高濃度域の処理かはeの値で判明
する。そこで(e−a)とeに応じて、eの値を参照表
から更新すれば、濃度軸の上下で非対称で、濃度軸から
の距離の大きな領域で補正を控え目にし、低濃度域で補
正を控え目にすることができる。ただし図35に対応す
る処理は行わなくても良い。When a map is used or a plurality of drift axes are provided for each CO concentration, the above processing can be performed by manipulating the data in the map or manipulating the inclination of the drift axis. However, in the embodiment, after e is obtained, the program memory 3
The above-described processing is performed using the two-dimensional lookup table stored in step S4.
The headings of this look-up table are (ea) and e, where (ea) is proportional to the distance from the concentration axis. The sign of (ea) is inverted above and below the density axis. The value of e indicates the CO concentration, and the processing of the low concentration area or the processing of the high concentration area is determined by the value of e. Therefore, if the value of e is updated from the look-up table in accordance with (ea) and e, the correction is conservative in an area that is asymmetrical above and below the density axis and large in distance from the density axis, and is corrected in a low density area. Can be modest. However, the processing corresponding to FIG. 35 may not be performed.
【0063】値eが最終的に判明すると、65ppmと2
00ppm間の線分の内分比yを求める。yが0でCO濃
度が200ppm、yが1でCO濃度が65ppmである。こ
の間には約3倍のCO濃度の変化があり、これをそのま
ま解くと、exp(y)の級数展開で2次以上の項が必
要になるので、65ppmと200ppmの中点を考え、これ
よりも200ppm寄りでは、200ppmの濃度を元に級数
展開し、これよりも65ppm寄りでは65ppmの濃度を元
に級数展開する。このようにすればexp(y)=1+
y と近似しても、ほとんど近似誤差は生じない。この
ようにして水素濃度の補正前のCO濃度が定まる。When the value e is finally found, 65 ppm and 2
The internal division ratio y of the line segment between 00 ppm is determined. When y is 0, the CO concentration is 200 ppm, and when y is 1, the CO concentration is 65 ppm. During this period, there is a change in the CO concentration about three times, and if this is solved as it is, a second-order or higher term is required in the series expansion of exp (y), so consider the midpoint between 65 ppm and 200 ppm. In the vicinity of 200 ppm, the series is developed based on the concentration of 200 ppm, and in the vicinity of 65 ppm, the series is developed based on the concentration of 65 ppm. In this way, exp (y) = 1 +
Even when approximating y, there is almost no approximation error. In this way, the CO concentration before the correction of the hydrogen concentration is determined.
【0064】さて求めた位相点がCO200ppmを通る
ドリフト軸よりも上側にある場合、CO濃度は200pp
mを越えている。そこでこの場合EEPROM20にア
クセスし、CO400ppmの基準信号を読み出す。以下
同様にしてCO濃度を求める。この場合の処理はCO6
5ppmと200ppmの2つの基準信号を用いた場合の処理
と同様で、CO65ppmの基準信号の代わりにCO40
0ppmの基準信号を用いればよい。When the obtained phase point is above the drift axis passing through 200 ppm of CO, the CO concentration is 200 pp.
m is exceeded. Therefore, in this case, the EEPROM 20 is accessed to read the reference signal of 400 ppm of CO. Hereinafter, the CO concentration is determined in the same manner. The processing in this case is CO6
This is the same as the process when two reference signals of 5 ppm and 200 ppm are used.
A reference signal of 0 ppm may be used.
【0065】温湿度依存性には図36のようなガス濃度
依存性があり、低濃度域と高濃度域とでは温湿度依存性
が異なる。しかし温湿度補正サブルーチンの段階ではC
O濃度は不明である。そこでCO濃度を仮に求めた後
に、周囲温度Tと仮に求めたCO濃度とからプログラム
メモリー34に記憶させた2次元の参照表を用い、CO
濃度を再補正する。これは温湿度依存性のCO濃度依存
性を無視して1次近似し、求めた仮のCO濃度を用いて
温湿度依存性のCO濃度依存性を再補正する手法であ
る。参照表には仮のCO濃度と周囲温度とを見出しとし
てCO濃度の増減量を記憶させ、この値を加えて再度C
O濃度を求める。図35に対応する処理は省略可能であ
る。The temperature / humidity dependency has a gas concentration dependency as shown in FIG. 36, and the temperature / humidity dependency differs between a low concentration region and a high concentration region. However, at the stage of the temperature / humidity correction subroutine, C
O concentration is unknown. Therefore, after temporarily calculating the CO concentration, a two-dimensional look-up table stored in the program memory 34 from the ambient temperature T and the temporarily determined CO concentration is used.
Re-correct the density. This is a method of first-order approximation ignoring the temperature-humidity dependence of the CO concentration, and re-correcting the temperature-humidity dependence of the CO concentration using the obtained temporary CO concentration. In the lookup table, the amount of increase or decrease in the CO concentration is stored using the provisional CO concentration and the ambient temperature as headings.
Obtain the O concentration. The processing corresponding to FIG. 35 can be omitted.
【0066】[0066]
【水素補正サブルーチン】CO濃度が求まると水素補正
を施す。その処理を図34に、その原理を図30に示
す。0秒目の抵抗値の対数と69秒目の抵抗値の対数で
定まる2次元位相空間において、測定点の座標が(a,
c)であるとする。これを65ppm,200ppm,400
ppmの濃度軸へ図30の垂直上方に移動させた際の交点
を(a,g)とする。そしてgとcとの差をhとし、h
によって水素濃度が定まるものとする。この場合aの値
がnを越えるか否かから、基準信号として400ppmの
信号を用いる必要があるか否かを判別し、aがn以下の
場合、EEPROM20にアクセスして400ppmの基
準信号を読み出す。そして点(a,g)が200ppmの
基準信号と400ppmの基準信号を結ぶ線分上にあるこ
とから、座標gについて1つの式が発生し、これからg
を求めることができる。gが求まればhが求まり、例え
ばk1を適当な正の定数として、図31のメインループ
で求めたCO濃度にk1×hを加算する。ここでの加算
の基準としては、例えばCO検出装置の水素濃度依存性
が0となるようにする、あるいはCO対水素の相対感度
が10:1等の適当な値となるようにする。aがnより
も大きい場合、即ち図30で求めた座標点(a,c)が
200ppmの基準信号よりも右側にある場合、65ppmと
200ppmの基準信号を用いる。そして前記と同様にし
てhを求め、水素濃度の補正を行う。[Hydrogen correction subroutine] When the CO concentration is determined, hydrogen correction is performed. FIG. 34 shows the processing, and FIG. 30 shows the principle thereof. In a two-dimensional phase space defined by the logarithm of the resistance value at 0 seconds and the logarithm of the resistance value at 69 seconds, the coordinates of the measurement point are (a,
c). This is 65ppm, 200ppm, 400
The point of intersection at the time of moving vertically upward in FIG. 30 to the ppm concentration axis is (a, g). Then, the difference between g and c is h, and h
The hydrogen concentration is determined by the In this case, it is determined whether or not it is necessary to use a signal of 400 ppm as a reference signal from whether or not the value of a exceeds n. If a is equal to or less than n, the EEPROM 20 is accessed to read the reference signal of 400 ppm. . Since the point (a, g) is on the line connecting the 200 ppm reference signal and the 400 ppm reference signal, one equation is generated for the coordinate g, and g
Can be requested. When g is obtained, h is obtained. For example, k1 × h is added to the CO concentration obtained in the main loop of FIG. 31, for example, using k1 as an appropriate positive constant. As a criterion for the addition, for example, the hydrogen concentration dependency of the CO detector is set to 0, or the relative sensitivity of CO to hydrogen is set to an appropriate value such as 10: 1. When a is larger than n, that is, when the coordinate point (a, c) obtained in FIG. 30 is on the right side of the reference signal of 200 ppm, the reference signals of 65 ppm and 200 ppm are used. Then, h is obtained in the same manner as described above, and the hydrogen concentration is corrected.
【0067】[0067]
【フーリエ変換】特定のセンサを例にし特定のヒータ波
形を例にして、実施例を説明したが、これらは例であ
る。また実施例ではガスセンサ信号の温度波形を母関数
に変換せずに用いたが、フーリエ変換等を施した信号を
用いても良い。例えばガスセンサの温度波形にラプラス
変換やフーリエ変換を施し、変換後の成分を複数組み合
わせてガスを検出する。この場合、対象ガスへの感度の
高い成分を主信号とし、これと相関して対象ガスへの感
度が低く、補正対象での挙動が類似した成分を補正用の
信号とすれば良い。[Fourier Transform] The embodiment has been described by taking a specific sensor as an example and a specific heater waveform as an example, but these are examples. In the embodiment, the temperature waveform of the gas sensor signal is used without being converted into the generating function. However, a signal subjected to Fourier transform or the like may be used. For example, Laplace transform or Fourier transform is performed on the temperature waveform of the gas sensor, and gas is detected by combining a plurality of converted components. In this case, a component having high sensitivity to the target gas may be used as the main signal, and a component having low sensitivity to the target gas and having a similar behavior in the correction target may be used as the correction signal.
【図1】 実施例のガス検出装置のブロック図FIG. 1 is a block diagram of a gas detection device according to an embodiment.
【図2】 実施例のガス検出装置でのRAMの構成を
示す図FIG. 2 is a diagram showing a configuration of a RAM in the gas detection device of the embodiment.
【図3】 実施例のガス検出装置でのEEPROMの
構成を示す図FIG. 3 is a diagram showing a configuration of an EEPROM in the gas detection device of the embodiment.
【図4】 実施例で用いたガスセンサの抵抗値の波形
を示す特性図FIG. 4 is a characteristic diagram showing a waveform of a resistance value of the gas sensor used in the embodiment.
【図5】 実施例で用いたガスセンサの高温域初期の
抵抗値波形を示す特性図FIG. 5 is a characteristic diagram showing a resistance value waveform of a gas sensor used in an example in an initial high temperature range.
【図6】 実施例のガス検出装置での、サンプリング
アルゴリズムを示すフローチャートFIG. 6 is a flowchart showing a sampling algorithm in the gas detection device according to the embodiment.
【図7】 実施例のガス検出装置での、調整アルゴリ
ズムを示すフローチャートFIG. 7 is a flowchart showing an adjustment algorithm in the gas detection device according to the embodiment.
【図8】 実施例で用いたガスセンサの温度変化を示
す特性図FIG. 8 is a characteristic diagram showing a temperature change of the gas sensor used in the embodiment.
【図9】 実施例での0秒目のセンサ信号と他の時点
でのセンサ信号との、同一測定日での抵抗値の相関を示
す特性図FIG. 9 is a characteristic diagram showing a correlation between a resistance value of a sensor signal at 0 seconds and a sensor signal at another time point on the same measurement date in the embodiment.
【図10】 実施例での6秒目のセンサ信号と他の時点
でのセンサ信号との、同一測定日でCO100ppm中で
の抵抗値の相関を示す特性図FIG. 10 is a characteristic diagram showing the correlation between the resistance value of the sensor signal at 6 seconds and the sensor signal at another time point in the example in 100 ppm of CO on the same measurement date.
【図11】 実施例での60秒目のセンサ信号と他の時
点でのセンサ信号との、同一測定日でCO100ppm中
での抵抗値の相関を示す特性図FIG. 11 is a characteristic diagram showing a correlation between a resistance value of a sensor signal at 60 seconds and a sensor signal at another time point in 100 ppm of CO on the same measurement date in the embodiment.
【図12】 実施例での69秒目のセンサ信号と他の時
点でのセンサ信号との、同一測定日でCO100ppm中
での抵抗値の相関を示す特性図FIG. 12 is a characteristic diagram showing a correlation between a resistance value of a sensor signal at 69 seconds and a sensor signal at another time point in 100 ppm of CO on the same measurement date in the embodiment.
【図13】 実施例での0秒目のセンサ信号と他の時点
でのセンサ信号との、同一測定日でCO300ppm中で
の抵抗値の相関を示す特性図FIG. 13 is a characteristic diagram showing a correlation between a resistance value of the sensor signal at 0 seconds and a sensor signal at another time point in the same measurement date in 300 ppm of CO in the embodiment.
【図14】 実施例での6秒目のセンサ信号と他の時点
でのセンサ信号との、同一測定日でCO100ppm+H2
300ppm中での抵抗値の相関を示す特性図FIG. 14 is a graph showing the relationship between the sensor signal at 6 seconds and the sensor signal at another time point in the embodiment, on the same measurement date, CO 100 ppm + H 2.
Characteristic diagram showing correlation of resistance value at 300 ppm
【図15】 実施例での60秒目のセンサ信号と他の時
点でのセンサ信号との、同一測定日でH21000ppm中
での抵抗値の相関を示す特性図FIG. 15 is a characteristic diagram showing a correlation between a resistance value in H2 1000 ppm on the same measurement date between a sensor signal at 60 seconds and a sensor signal at another time point in the embodiment.
【図16】 実施例での69秒目のセンサ信号と他の時
点でのセンサ信号との、異なる測定日での抵抗値の相関
を示す特性図FIG. 16 is a characteristic diagram showing a correlation between resistance values at different measurement dates between a sensor signal at 69 seconds and a sensor signal at another time point in the embodiment.
【図17】 実施例での相関の評価を示すフローチャー
トFIG. 17 is a flowchart illustrating evaluation of correlation in the embodiment.
【図18】 変形例での相関の評価を示すフローチャー
トFIG. 18 is a flowchart showing an evaluation of a correlation in a modified example.
【図19】 実施例での0−3秒平面でのドリフト特性
を示す特性図FIG. 19 is a characteristic diagram showing a drift characteristic on a 0-3 second plane in the example.
【図20】 実施例での0−6秒平面でのドリフト特性
を示す特性図FIG. 20 is a characteristic diagram showing a drift characteristic on a 0-6 second plane in the example.
【図21】 実施例での0−12秒平面でのドリフト特
性を示す特性図FIG. 21 is a characteristic diagram showing a drift characteristic on a 0-12 second plane in the example.
【図22】 実施例での0−30秒平面でのドリフト特
性を示す特性図FIG. 22 is a characteristic diagram showing a drift characteristic on a 0-30 second plane in the example.
【図23】 実施例での0−60秒平面でのドリフト特
性を示す特性図FIG. 23 is a characteristic diagram showing a drift characteristic in a 0-60 second plane in the example.
【図24】 実施例での0−120秒平面でのドリフト
特性を示す特性図FIG. 24 is a characteristic diagram showing a drift characteristic on a 0-120 second plane in the example.
【図25】 実施例での0−69秒平面でのドリフト特
性を示す特性図FIG. 25 is a characteristic diagram showing a drift characteristic on a 0-69 second plane in the example.
【図26】 実施例での9−60秒平面での温湿度特性
を示す特性図FIG. 26 is a characteristic diagram showing a temperature-humidity characteristic in a plane for 9-60 seconds in the example.
【図27】 ガスセンサの20℃−65%RHと0℃間
の温湿度依存性を示す特性図FIG. 27 is a characteristic diagram showing the temperature and humidity dependency between 20 ° C.-65% RH and 0 ° C. of the gas sensor.
【図28】 ガスセンサの20℃−65%RHと50℃
−40%RH間の温湿度依存性を示す特性図FIG. 28: 20 ° C.-65% RH of gas sensor and 50 ° C.
Characteristic diagram showing temperature and humidity dependence between -40% RH
【図29】 実施例でのCO濃度の算出機構を示す特性
図FIG. 29 is a characteristic diagram showing a mechanism for calculating the CO concentration in the embodiment.
【図30】 実施例での水素補正を示す特性図FIG. 30 is a characteristic diagram showing hydrogen correction in the embodiment.
【図31】 実施例での、メインプログラムを示すフロ
ーチャートFIG. 31 is a flowchart showing a main program in the embodiment.
【図32】 実施例での、温湿度補正を示すフローチャ
ートFIG. 32 is a flowchart illustrating temperature and humidity correction in the embodiment.
【図33】 実施例での、ドリフト補正を示すフローチ
ャートFIG. 33 is a flowchart illustrating drift correction in the embodiment.
【図34】 実施例のガス検出装置での、共存水素への
補正を示すフローチャートFIG. 34 is a flowchart showing correction to coexisting hydrogen in the gas detection device according to the embodiment.
【図35】 実施例でのドリフト補正の詳細を示す特性
図FIG. 35 is a characteristic diagram showing details of drift correction in the embodiment.
【図36】 実施例での温湿度補正の詳細を示す特性図FIG. 36 is a characteristic diagram showing details of temperature and humidity correction in the embodiment.
2 金属酸化物半導体 4 直流電源 5 抵抗ラダー 8,48 マイクロコンピュータ 10 バス 12 ADコンバータ 14 抵抗ラダー制御部 16 ヒータ制御部 18 EEPROM制御部 20 EEPROM 22 入出力 23 調整スイッチ 24 リセットスイッチ 26 算術論理演算ユニット 28 シーケンス制御部 30 RAM 32 警報制御部 34 プログラムメモリー 36 駆動回路 38 ブザー 39,40 LED 51〜54 カード 42 サーミスタ 44 温湿度補正部 S 金属酸化物半導体ガスセンサ h1,h2 ヒータ T1,T2 トランジスタ R1〜Rn 抵抗 2 Metal oxide semiconductor 4 DC power supply 5 Resistance ladder 8,48 Microcomputer 10 Bus 12 AD converter 14 Resistance ladder control unit 16 Heater control unit 18 EEPROM control unit 20 EEPROM 22 I / O 23 Adjustment switch 24 Reset switch 26 Arithmetic logic operation unit 28 Sequence control unit 30 RAM 32 Alarm control unit 34 Program memory 36 Drive circuit 38 Buzzer 39, 40 LED 51 to 54 Card 42 Thermistor 44 Temperature / humidity correction unit S Metal oxide semiconductor gas sensor h1, h2 Heater T1, T2 Transistors R1 to Rn resistance
───────────────────────────────────────────────────── フロントページの続き (72)発明者 高松 和子 箕面市船場西1丁目5番3号 フィガロ技 研株式会社内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Kazuko Takamatsu 1-3-5 Senba Nishi, Minoh City Inside Figaro Giken Co., Ltd.
Claims (4)
化させて複数のガスセンサ信号を取り出し、これらを組
み合わせて対象ガスを検出するようにしたガス検出装置
において、 対象ガスへの感度の高いガスセンサ信号を主信号として
用い、 上記主信号と相関が高いガスセンサ信号の中で、対象ガ
スへの感度が異なり、かつ補正対象に対する特性が類似
した信号を補正用信号として用いることを特徴とする、
ガス検出装置。1. A gas detection device which detects a target gas by combining a plurality of gas sensor signals by changing a temperature of a metal oxide semiconductor gas sensor, wherein a gas sensor signal having high sensitivity to the target gas is mainly used. Used as a signal, among the gas sensor signals having a high correlation with the main signal, a signal having a different sensitivity to the target gas and having a characteristic similar to the correction target is used as a correction signal,
Gas detector.
化させて複数のガスセンサ信号を取り出し、これらを組
み合わせて対象ガスを検出するようにしたガス検出装置
の設計において、 対象ガスへの感度の高いガスセンサ信号を主信号として
用い、 上記主信号と相関が高いガスセンサ信号を探索して、 探索したガスセンサ信号の中で、対象ガスへの感度が異
なり、かつ補正対象に対する特性が類似した信号を補正
用信号として用いることを特徴とする、ガス検出装置の
設計方法。2. A gas detection device having a high sensitivity to a target gas in a gas detection device designed to detect a target gas by combining a plurality of gas sensor signals by changing a temperature of a metal oxide semiconductor gas sensor. Is used as a main signal, a gas sensor signal having a high correlation with the main signal is searched, and among the searched gas sensor signals, a signal having a different sensitivity to a target gas and having similar characteristics to a correction target is used as a correction signal. A method for designing a gas detection device, characterized in that it is used.
用いて、対象ガス中での抵抗値の相関を用いることを特
徴とする、請求項2のガス検出装置の設計方法。3. The method for designing a gas detection device according to claim 2, wherein a plurality of gas sensors are used as the correlation and a correlation between resistance values in a target gas is used.
用いて、補正対象での抵抗値の挙動の相関を用いること
を特徴とする、請求項2のガス検出装置の設計方法。4. The method according to claim 2, wherein a plurality of gas sensors are used as the correlation, and a correlation of a behavior of a resistance value of a correction target is used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25604997A JPH1183776A (en) | 1997-09-03 | 1997-09-03 | Gas detector and its design method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25604997A JPH1183776A (en) | 1997-09-03 | 1997-09-03 | Gas detector and its design method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1183776A true JPH1183776A (en) | 1999-03-26 |
Family
ID=17287202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25604997A Pending JPH1183776A (en) | 1997-09-03 | 1997-09-03 | Gas detector and its design method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1183776A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005300448A (en) * | 2004-04-15 | 2005-10-27 | Yazaki Corp | Gas detector and alarm |
| JP2009539069A (en) * | 2006-05-29 | 2009-11-12 | エーアーデーエス・ドイッチュラント・ゲーエムベーハー | Method and device for operating a MOX gas sensor |
| JP2024020312A (en) * | 2019-04-05 | 2024-02-14 | エイチツースキャン・コーポレーション | Method and system for determining target gas concentration in a fluid environment |
-
1997
- 1997-09-03 JP JP25604997A patent/JPH1183776A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005300448A (en) * | 2004-04-15 | 2005-10-27 | Yazaki Corp | Gas detector and alarm |
| JP2009539069A (en) * | 2006-05-29 | 2009-11-12 | エーアーデーエス・ドイッチュラント・ゲーエムベーハー | Method and device for operating a MOX gas sensor |
| JP2024020312A (en) * | 2019-04-05 | 2024-02-14 | エイチツースキャン・コーポレーション | Method and system for determining target gas concentration in a fluid environment |
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