JPS4832779A - - Google Patents

Info

Publication number: JPS4832779A
Authority: JP; Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP47080085A

Other languages

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1971-08-30

Filing date

1972-08-11

Publication date

1973-05-02

1972-08-11 Application filed filed Critical

1973-05-02 Publication of JPS4832779A publication Critical patent/JPS4832779A/ja

Status Pending legal-status Critical Current

Links

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/063—Sliding boat system
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/066—Injection or centrifugal force system
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
- C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
- H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
- H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2907—Materials being Group IIIA-VA materials
- H10P14/2911—Arsenides
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3421—Arsenides
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

JP47080085A 1971-08-30 1972-08-11 Pending JPS4832779A (cs)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US17585671A	1971-08-30	1971-08-30

Publications (1)

Publication Number	Publication Date
JPS4832779A true JPS4832779A (cs)	1973-05-02

Family

ID=22641941

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP47080085A Pending JPS4832779A (cs)	1971-08-30	1972-08-11

Country Status (4)

Country	Link
JP (1)	JPS4832779A (cs)
DE (1)	DE2242138A1 (cs)
FR (1)	FR2150756A1 (cs)
IT (1)	IT964142B (cs)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5440567A (en) *	1977-09-06	1979-03-30	Matsushita Electric Ind Co Ltd	Crystal growth device
JPS6155102A (ja) *	1984-08-10	1986-03-19	ヘキスト・アクチエンゲゼルシヤフト	低下した接着力および改善された抗張力を有するポリビニルブチラールの製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS4840806A (cs) *	1971-09-21	1973-06-15

1972
- 1972-07-26 FR FR7228837A patent/FR2150756A1/fr active Granted
- 1972-08-11 JP JP47080085A patent/JPS4832779A/ja active Pending
- 1972-08-22 IT IT28365/72A patent/IT964142B/it active
- 1972-08-26 DE DE2242138A patent/DE2242138A1/de active Pending

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS4840806A (cs) *	1971-09-21	1973-06-15

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5440567A (en) *	1977-09-06	1979-03-30	Matsushita Electric Ind Co Ltd	Crystal growth device
JPS6155102A (ja) *	1984-08-10	1986-03-19	ヘキスト・アクチエンゲゼルシヤフト	低下した接着力および改善された抗張力を有するポリビニルブチラールの製造方法

Also Published As

Publication number	Publication date
IT964142B (it)	1974-01-21
DE2242138A1 (de)	1973-03-08
FR2150756B1 (cs)	1975-09-12
FR2150756A1 (en)	1973-04-13

Publication	Publication Date	Title
ATA136472A (cs)	1973-12-15
FR2154185A5 (cs)	1973-05-04
AU2658571A (cs)	1972-09-21
FR2150756B1 (cs)	1975-09-12
AU2691671A (cs)	1972-09-28
AU2684071A (cs)	1972-09-28
AU2742671A (cs)	1972-10-12
AU2726271A (cs)	1972-10-05
AU3005371A (cs)	1972-12-21
AU2894671A (cs)	1972-11-23
AU2941471A (cs)	1972-11-30
AU2952271A (cs)	1972-12-07
AU2837671A (cs)	1972-11-09
AU2740271A (cs)	1972-10-12
AU2654071A (cs)	1972-09-21
AU2880771A (cs)	1972-11-16
AU2669471A (cs)	1972-09-21
AU2684171A (cs)	1971-07-15
AU2706571A (cs)	1971-07-15
AU3038671A (cs)	1973-01-04
AU3025871A (cs)	1973-01-04
AU2724971A (cs)	1972-10-05
AU2963771A (cs)	1972-12-07
AU2875571A (cs)	1972-11-16
AU2755871A (cs)	1972-10-19

JPS4832779A - - Google Patents

Info

Links

Classifications

Landscapes

Applications Claiming Priority (1)

Publications (1)

Family

ID=22641941

Family Applications (1)

Country Status (4)

Cited By (2)

Citations (1)

Patent Citations (1)

Cited By (2)

Also Published As

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