JPS4893276A - - Google Patents

Info

Publication number: JPS4893276A
Authority: JP; Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP48015482A

Other versions

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1972-02-09

Filing date

1973-02-07

Publication date

1973-12-03

1973-02-07 Application filed filed Critical

1973-12-03 Publication of JPS4893276A publication Critical patent/JPS4893276A/ja

1976-12-15 Publication of JPS5147587B2 publication Critical patent/JPS5147587B2/ja

Status Expired legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
- H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
- H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/118—Oxide films

Landscapes

Electrodes Of Semiconductors (AREA)
Insulated Gate Type Field-Effect Transistor (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

JP48015482A 1972-02-09 1973-02-07 Expired JPS5147587B2 (ja)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US22479672A	1972-02-09	1972-02-09

Publications (2)

Publication Number	Publication Date
JPS4893276A true JPS4893276A (ja)	1973-12-03
JPS5147587B2 JPS5147587B2 (ja)	1976-12-15

Family

ID=22842251

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP48015482A Expired JPS5147587B2 (ja)	1972-02-09	1973-02-07

Country Status (5)

Country	Link
US (1)	US3775262A (ja)
JP (1)	JPS5147587B2 (ja)
DE (1)	DE2303574B2 (ja)
FR (1)	FR2171219B1 (ja)
GB (1)	GB1351923A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5384460A (en) *	1976-12-29	1978-07-25	Fujitsu Ltd	Munufacture of semiconductor device
JPS54164193A (en) *	1978-03-23	1979-12-27	Olsson Kjell I	Method and device for measuring surface tension

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3987538A (en) *	1973-12-26	1976-10-26	Texas Instruments Incorporated	Method of making devices having closely spaced electrodes
US3929529A (en) *	1974-12-09	1975-12-30	Ibm	Method for gettering contaminants in monocrystalline silicon
US4157610A (en) *	1976-12-20	1979-06-12	Tokyo Shibaura Electric Co., Ltd.	Method of manufacturing a field effect transistor
US4136434A (en) *	1977-06-10	1979-01-30	Bell Telephone Laboratories, Incorporated	Fabrication of small contact openings in large-scale-integrated devices
JPS5812365A (ja) *	1981-07-15	1983-01-24	Japan Electronic Ind Dev Assoc<Jeida>	薄膜トランジスタ及びその製造方法
JPS5844033A (ja) *	1981-09-11	1983-03-14	富士写真光機株式会社	内視鏡用アダプタ−型処置具導入装置
DE3229205A1 (de) *	1982-08-05	1984-02-09	Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt	Halbleiterbauelement und ein verfahren zu dessen herstellung
JPS6142140A (ja) *	1984-07-30	1986-02-28	インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション	自己整合構造の形成方法
US5289030A (en)	1991-03-06	1994-02-22	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device with oxide layer
JP2794678B2 (ja) *	1991-08-26	1998-09-10	株式会社半導体エネルギー研究所	絶縁ゲイト型半導体装置およびその作製方法
USRE36314E (en) *	1991-03-06	1999-09-28	Semiconductor Energy Laboratory Co., Ltd.	Insulated gate field effect semiconductor devices having a LDD region and an anodic oxide film of a gate electrode
JP2717237B2 (ja)	1991-05-16	1998-02-18	株式会社半導体エネルギー研究所	絶縁ゲイト型半導体装置およびその作製方法
US5650338A (en) *	1991-08-26	1997-07-22	Semiconductor Energy Laboratory Co., Ltd.	Method for forming thin film transistor
US6624450B1 (en)	1992-03-27	2003-09-23	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for forming the same
US5576225A (en) *	1992-05-09	1996-11-19	Semiconductor Energy Laboratory Co., Ltd.	Method of forming electric circuit using anodic oxidation
US5441618A (en) *	1992-11-10	1995-08-15	Casio Computer Co., Ltd.	Anodizing apparatus and an anodizing method
TW297142B (ja)	1993-09-20	1997-02-01	Handotai Energy Kenkyusho Kk
TW299897U (en)	1993-11-05	1997-03-01	Semiconductor Energy Lab	A semiconductor integrated circuit
US5798281A (en) *	1995-11-08	1998-08-25	Texas Instruments Incorporated	Method for stressing oxide in MOS devices during fabrication using first and second opposite potentials
US5780347A (en) *	1996-05-20	1998-07-14	Kapoor; Ashok K.	Method of forming polysilicon local interconnects
US6370502B1 (en) *	1999-05-27	2002-04-09	America Online, Inc.	Method and system for reduction of quantization-induced block-discontinuities and general purpose audio codec
KR100358056B1 (ko) *	1999-12-27	2002-10-25	주식회사 하이닉스반도체	반도체 소자의 게이트 산화막 형성방법
US7060622B2 (en) *	2002-09-27	2006-06-13	Oki Electric Industry Co., Ltd.	Method of forming dummy wafer
US20120132529A1 (en) *	2010-11-30	2012-05-31	Katholieke Universiteit Leuven, K.U.Leuven R&D	Method for precisely controlled masked anodization

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3351825A (en) *	1964-12-21	1967-11-07	Solitron Devices	Semiconductor device having an anodized protective film thereon and method of manufacturing same
DE1919563A1 (de) *	1969-04-17	1970-10-29	Siemens Ag	Verfahren zum Herstellen von mit Gallium diffundierten Zonen in Halbleiterkristallen
US3634203A (en) *	1969-07-22	1972-01-11	Texas Instruments Inc	Thin film metallization processes for microcircuits
JPS4939873B1 (ja) *	1969-10-15	1974-10-29

1972
- 1972-02-09 US US00224796A patent/US3775262A/en not_active Expired - Lifetime
1973
- 1973-01-25 DE DE19732303574 patent/DE2303574B2/de not_active Withdrawn
- 1973-01-29 GB GB438473A patent/GB1351923A/en not_active Expired
- 1973-02-07 JP JP48015482A patent/JPS5147587B2/ja not_active Expired
- 1973-02-07 FR FR7304240A patent/FR2171219B1/fr not_active Expired

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5384460A (en) *	1976-12-29	1978-07-25	Fujitsu Ltd	Munufacture of semiconductor device
JPS54164193A (en) *	1978-03-23	1979-12-27	Olsson Kjell I	Method and device for measuring surface tension

Also Published As

Publication number	Publication date
DE2303574B2 (de)	1976-07-29
GB1351923A (en)	1974-05-15
DE2303574A1 (de)	1973-08-23
FR2171219B1 (ja)	1978-02-10
FR2171219A1 (ja)	1973-09-21
US3775262A (en)	1973-11-27
JPS5147587B2 (ja)	1976-12-15

Publication	Publication Date	Title
CS157611B2 (ja)	1974-09-16
JPS4974580U (ja)	1974-06-27
JPS498546U (ja)	1974-01-24
CS158009B1 (ja)	1974-10-15
CS156320B1 (ja)	1974-07-24
CS156348B1 (ja)	1974-07-24
CS155081B1 (ja)	1974-05-30
AR202780Q (ja)	1975-07-24
CS157544B1 (ja)	1974-09-16
CS157390B1 (ja)	1974-09-16
CS157329B1 (ja)	1974-09-16
JPS4991579U (ja)	1974-08-08
CS156390B1 (ja)	1974-07-24
CH579804A5 (ja)	1976-09-15
CH591514A5 (ja)	1977-09-30
CH573003A5 (ja)	1976-02-27
CH574834A5 (ja)	1976-04-30
CH574860A5 (ja)	1976-04-30
CH575929A5 (ja)	1976-05-31
CH576160A5 (ja)	1976-05-31
CH576517A5 (ja)	1976-06-15
CH578010A5 (ja)	1976-07-30
CH578151A5 (ja)	1976-07-30
CH579543A5 (ja)	1976-09-15
CH568120A5 (ja)	1975-10-31

JPS4893276A - - Google Patents

Info

Links

Classifications

Landscapes

Applications Claiming Priority (1)

Publications (2)

Family

ID=22842251

Family Applications (1)

Country Status (5)

Cited By (2)

Families Citing this family (24)

Family Cites Families (4)

Cited By (2)

Also Published As

Similar Documents