JPS4941469B1 - - Google Patents

Info

Publication number
JPS4941469B1
JPS4941469B1 JP48140242A JP14024273A JPS4941469B1 JP S4941469 B1 JPS4941469 B1 JP S4941469B1 JP 48140242 A JP48140242 A JP 48140242A JP 14024273 A JP14024273 A JP 14024273A JP S4941469 B1 JPS4941469 B1 JP S4941469B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48140242A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4941469B1 publication Critical patent/JPS4941469B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP48140242A 1970-05-04 1973-12-11 Pending JPS4941469B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3413970A 1970-05-04 1970-05-04

Publications (1)

Publication Number Publication Date
JPS4941469B1 true JPS4941469B1 (fr) 1974-11-09

Family

ID=21874557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48140242A Pending JPS4941469B1 (fr) 1970-05-04 1973-12-11

Country Status (8)

Country Link
JP (1) JPS4941469B1 (fr)
BE (1) BE766652A (fr)
DE (1) DE2120660A1 (fr)
ES (1) ES390640A1 (fr)
FR (1) FR2096742B1 (fr)
GB (1) GB1295395A (fr)
NL (1) NL7106007A (fr)
SE (1) SE7501442L (fr)

Also Published As

Publication number Publication date
GB1295395A (fr) 1972-11-08
NL7106007A (fr) 1971-11-08
ES390640A1 (es) 1975-08-16
FR2096742A1 (fr) 1972-02-25
DE2120660A1 (de) 1971-11-25
BE766652A (fr) 1971-10-01
SE7501442L (fr) 1975-02-10
FR2096742B1 (fr) 1976-05-28

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