BE766652A - Dispositif a circuit integre a transistors complementaires a effet de champ et a porte isolee ou analogue - Google Patents

Dispositif a circuit integre a transistors complementaires a effet de champ et a porte isolee ou analogue

Info

Publication number
BE766652A
BE766652A BE766652A BE766652A BE766652A BE 766652 A BE766652 A BE 766652A BE 766652 A BE766652 A BE 766652A BE 766652 A BE766652 A BE 766652A BE 766652 A BE766652 A BE 766652A
Authority
BE
Belgium
Prior art keywords
insulated
integrated circuit
field effect
circuit device
effect transistors
Prior art date
Application number
BE766652A
Other languages
English (en)
Inventor
T G Athanas
J K Bhagat
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of BE766652A publication Critical patent/BE766652A/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
BE766652A 1970-05-04 1971-05-03 Dispositif a circuit integre a transistors complementaires a effet de champ et a porte isolee ou analogue BE766652A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3413970A 1970-05-04 1970-05-04

Publications (1)

Publication Number Publication Date
BE766652A true BE766652A (fr) 1971-10-01

Family

ID=21874557

Family Applications (1)

Application Number Title Priority Date Filing Date
BE766652A BE766652A (fr) 1970-05-04 1971-05-03 Dispositif a circuit integre a transistors complementaires a effet de champ et a porte isolee ou analogue

Country Status (8)

Country Link
JP (1) JPS4941469B1 (fr)
BE (1) BE766652A (fr)
DE (1) DE2120660A1 (fr)
ES (1) ES390640A1 (fr)
FR (1) FR2096742B1 (fr)
GB (1) GB1295395A (fr)
NL (1) NL7106007A (fr)
SE (1) SE7501442L (fr)

Also Published As

Publication number Publication date
SE7501442L (fr) 1975-02-10
FR2096742B1 (fr) 1976-05-28
FR2096742A1 (fr) 1972-02-25
JPS4941469B1 (fr) 1974-11-09
GB1295395A (fr) 1972-11-08
NL7106007A (fr) 1971-11-08
ES390640A1 (es) 1975-08-16
DE2120660A1 (de) 1971-11-25

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