JPS5094887A - - Google Patents

Info

Publication number
JPS5094887A
JPS5094887A JP49146687A JP14668774A JPS5094887A JP S5094887 A JPS5094887 A JP S5094887A JP 49146687 A JP49146687 A JP 49146687A JP 14668774 A JP14668774 A JP 14668774A JP S5094887 A JPS5094887 A JP S5094887A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP49146687A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5094887A publication Critical patent/JPS5094887A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Bipolar Transistors (AREA)
JP49146687A 1973-12-20 1974-12-19 Pending JPS5094887A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2363577A DE2363577A1 (de) 1973-12-20 1973-12-20 Kombination aus einem bipolaren transistor und einem mos-feldeffekttransistor

Publications (1)

Publication Number Publication Date
JPS5094887A true JPS5094887A (de) 1975-07-28

Family

ID=5901421

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49146687A Pending JPS5094887A (de) 1973-12-20 1974-12-19

Country Status (11)

Country Link
JP (1) JPS5094887A (de)
AT (1) AT340481B (de)
BE (1) BE823686R (de)
CA (1) CA1033468A (de)
CH (1) CH586959A5 (de)
DE (1) DE2363577A1 (de)
FR (1) FR2255710B2 (de)
GB (1) GB1481184A (de)
IT (1) IT1046735B (de)
NL (1) NL7416703A (de)
SE (1) SE404853B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009019866A1 (ja) * 2007-08-07 2009-02-12 Kaori Takakubo 半導体装置及びその駆動方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0118336B1 (de) * 1983-02-03 1988-04-20 Fairchild Semiconductor Corporation BiMOS Leistungstransistor mit hoher Spannung
DE3620686C2 (de) * 1986-06-20 1999-07-22 Daimler Chrysler Ag Strukturierter Halbleiterkörper
US4857766A (en) * 1987-10-30 1989-08-15 International Business Machine Corporation BiMos input circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009019866A1 (ja) * 2007-08-07 2009-02-12 Kaori Takakubo 半導体装置及びその駆動方法

Also Published As

Publication number Publication date
NL7416703A (nl) 1975-06-24
CA1033468A (en) 1978-06-20
CH586959A5 (de) 1977-04-15
IT1046735B (it) 1980-07-31
FR2255710B2 (de) 1979-02-23
GB1481184A (en) 1977-07-27
SE7416017L (de) 1975-06-23
ATA917974A (de) 1977-04-15
SE404853B (sv) 1978-10-30
BE823686R (fr) 1975-04-16
DE2363577A1 (de) 1975-06-26
AT340481B (de) 1977-12-12
FR2255710A2 (de) 1975-07-18

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