JPS51111043A - Mis logical circuit - Google Patents
Mis logical circuitInfo
- Publication number
- JPS51111043A JPS51111043A JP50035597A JP3559775A JPS51111043A JP S51111043 A JPS51111043 A JP S51111043A JP 50035597 A JP50035597 A JP 50035597A JP 3559775 A JP3559775 A JP 3559775A JP S51111043 A JPS51111043 A JP S51111043A
- Authority
- JP
- Japan
- Prior art keywords
- logical circuit
- mis
- transmission gate
- effect caused
- gate fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/83125—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having shared source or drain regions
Landscapes
- Shift Register Type Memory (AREA)
- Logic Circuits (AREA)
Abstract
PURPOSE:Logical circuit preventing memory discharge due to lateral transistor effect caused by transmission gate FET.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50035597A JPS51111043A (en) | 1975-03-26 | 1975-03-26 | Mis logical circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50035597A JPS51111043A (en) | 1975-03-26 | 1975-03-26 | Mis logical circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51111043A true JPS51111043A (en) | 1976-10-01 |
| JPS533221B2 JPS533221B2 (en) | 1978-02-04 |
Family
ID=12446205
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50035597A Granted JPS51111043A (en) | 1975-03-26 | 1975-03-26 | Mis logical circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS51111043A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5798717U (en) * | 1980-12-08 | 1982-06-17 |
-
1975
- 1975-03-26 JP JP50035597A patent/JPS51111043A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS533221B2 (en) | 1978-02-04 |
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