JPS5384570A - Field effect semiconductor device and its manufacture - Google Patents

Field effect semiconductor device and its manufacture

Info

Publication number
JPS5384570A
JPS5384570A JP16028376A JP16028376A JPS5384570A JP S5384570 A JPS5384570 A JP S5384570A JP 16028376 A JP16028376 A JP 16028376A JP 16028376 A JP16028376 A JP 16028376A JP S5384570 A JPS5384570 A JP S5384570A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
field effect
effect semiconductor
contacting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16028376A
Other languages
Japanese (ja)
Inventor
Yu Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16028376A priority Critical patent/JPS5384570A/en
Publication of JPS5384570A publication Critical patent/JPS5384570A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/871—Vertical FETs having Schottky gate electrodes 

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To manufacture FET, by providing the gate electrode Schottky-contacting on the conductive channel side wall projected on the semiconductor substrate.
JP16028376A 1976-12-29 1976-12-29 Field effect semiconductor device and its manufacture Pending JPS5384570A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16028376A JPS5384570A (en) 1976-12-29 1976-12-29 Field effect semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16028376A JPS5384570A (en) 1976-12-29 1976-12-29 Field effect semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPS5384570A true JPS5384570A (en) 1978-07-26

Family

ID=15711631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16028376A Pending JPS5384570A (en) 1976-12-29 1976-12-29 Field effect semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5384570A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5654075A (en) * 1979-07-27 1981-05-13 Gen Electric High frequency field effect transistor and method of manufacturing same
JPS58173870A (en) * 1982-04-05 1983-10-12 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン Semiconductor device
US4460910A (en) * 1981-11-23 1984-07-17 International Business Machines Corporation Heterojunction semiconductor
US4532532A (en) * 1982-12-30 1985-07-30 International Business Machines Corporation Submicron conductor manufacturing
US4570174A (en) * 1981-08-21 1986-02-11 The United States Of America As Represented By The Secretary Of The Army Vertical MESFET with air spaced gate electrode
JPS62283676A (en) * 1986-06-02 1987-12-09 Nec Corp Vertical field-effect transistor
CN105525444A (en) * 2014-10-17 2016-04-27 大和缝纫机制造株式会社 Sewing machine

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5654075A (en) * 1979-07-27 1981-05-13 Gen Electric High frequency field effect transistor and method of manufacturing same
US4570174A (en) * 1981-08-21 1986-02-11 The United States Of America As Represented By The Secretary Of The Army Vertical MESFET with air spaced gate electrode
US4460910A (en) * 1981-11-23 1984-07-17 International Business Machines Corporation Heterojunction semiconductor
JPS58173870A (en) * 1982-04-05 1983-10-12 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン Semiconductor device
US4532532A (en) * 1982-12-30 1985-07-30 International Business Machines Corporation Submicron conductor manufacturing
JPS62283676A (en) * 1986-06-02 1987-12-09 Nec Corp Vertical field-effect transistor
CN105525444A (en) * 2014-10-17 2016-04-27 大和缝纫机制造株式会社 Sewing machine
CN105525444B (en) * 2014-10-17 2020-04-07 大和缝纫机制造株式会社 Sewing machine

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