JPS51111085A - Semiconductor manufucturing process - Google Patents

Semiconductor manufucturing process

Info

Publication number
JPS51111085A
JPS51111085A JP50035595A JP3559575A JPS51111085A JP S51111085 A JPS51111085 A JP S51111085A JP 50035595 A JP50035595 A JP 50035595A JP 3559575 A JP3559575 A JP 3559575A JP S51111085 A JPS51111085 A JP S51111085A
Authority
JP
Japan
Prior art keywords
manufucturing
semiconductor
load
inverter
driver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50035595A
Other languages
Japanese (ja)
Inventor
Yoshio Tominaga
Eiichiro Sato
Hiroo Sakaba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50035595A priority Critical patent/JPS51111085A/en
Publication of JPS51111085A publication Critical patent/JPS51111085A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce the power consumption of the load MOST, in the circuit where the driver MOST such as an inverter and the load MOST are connected in series.
JP50035595A 1975-03-26 1975-03-26 Semiconductor manufucturing process Pending JPS51111085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50035595A JPS51111085A (en) 1975-03-26 1975-03-26 Semiconductor manufucturing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50035595A JPS51111085A (en) 1975-03-26 1975-03-26 Semiconductor manufucturing process

Publications (1)

Publication Number Publication Date
JPS51111085A true JPS51111085A (en) 1976-10-01

Family

ID=12446142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50035595A Pending JPS51111085A (en) 1975-03-26 1975-03-26 Semiconductor manufucturing process

Country Status (1)

Country Link
JP (1) JPS51111085A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4838984A (en) * 1971-09-20 1973-06-08
US3873372A (en) * 1973-07-09 1975-03-25 Ibm Method for producing improved transistor devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4838984A (en) * 1971-09-20 1973-06-08
US3873372A (en) * 1973-07-09 1975-03-25 Ibm Method for producing improved transistor devices

Similar Documents

Publication Publication Date Title
JPS544560A (en) Semiconductor inverter circuit
JPS5330840A (en) Reduction system of power consumption
JPS5219058A (en) Exclusive logical sum circuit
JPS51111085A (en) Semiconductor manufucturing process
JPS5221754A (en) Oscillation circuit
JPS51123533A (en) Transistor circuit
JPS5214345A (en) Transistor sparking circuit
JPS5319065A (en) Electronic timepiece
JPS53102660A (en) Push pull buffer circuit
JPS5220755A (en) Gate circuit
JPS528867A (en) Electronic watch
JPS52116059A (en) Pulse circuit
JPS52161A (en) Mos inverter circuit
JPS533764A (en) Low power consumption oscillating circuit
JPS5265635A (en) Level shift circuit
JPS5439536A (en) Ttl circuit possible for wired logic
JPS51113577A (en) Bipolar semi-conductor integrated circuit
JPS5264242A (en) Power-suspension time memory c-mos circuit
JPS5220754A (en) Gate circuit
JPS5362484A (en) Thyristor
JPS5266365A (en) Semiconductor logic circuit
JPS53143186A (en) Production of semiconductor device
JPS5295135A (en) Semi-conductor logic circuit
JPS5220777A (en) Semi-conductor unit
JPS5279689A (en) Driving circuit of electromic display unit