JPS51111086A - Manufacturing method of semi-conductor equipment - Google Patents
Manufacturing method of semi-conductor equipmentInfo
- Publication number
- JPS51111086A JPS51111086A JP50035574A JP3557475A JPS51111086A JP S51111086 A JPS51111086 A JP S51111086A JP 50035574 A JP50035574 A JP 50035574A JP 3557475 A JP3557475 A JP 3557475A JP S51111086 A JPS51111086 A JP S51111086A
- Authority
- JP
- Japan
- Prior art keywords
- semi
- manufacturing
- conductor equipment
- conductor
- equipment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- 230000010355 oscillation Effects 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
PURPOSE: To obtain low cost, highly reliable solid oscillation elements such as gun diode by mass production.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50035574A JPS51111086A (en) | 1975-03-26 | 1975-03-26 | Manufacturing method of semi-conductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50035574A JPS51111086A (en) | 1975-03-26 | 1975-03-26 | Manufacturing method of semi-conductor equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS51111086A true JPS51111086A (en) | 1976-10-01 |
Family
ID=12445518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50035574A Pending JPS51111086A (en) | 1975-03-26 | 1975-03-26 | Manufacturing method of semi-conductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS51111086A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54162484A (en) * | 1978-06-13 | 1979-12-24 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS60149176A (en) * | 1983-08-31 | 1985-08-06 | テキサス インスツルメンツ インコ−ポレイテツド | Microwave device |
| JPH01503423A (en) * | 1987-05-14 | 1989-11-16 | ヒユーズ・エアクラフト・カンパニー | 2 terminal semiconductor diode device |
| JPH07326623A (en) * | 1994-09-09 | 1995-12-12 | Res Dev Corp Of Japan | Method for manufacturing GaAs semiconductor diode |
-
1975
- 1975-03-26 JP JP50035574A patent/JPS51111086A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54162484A (en) * | 1978-06-13 | 1979-12-24 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS60149176A (en) * | 1983-08-31 | 1985-08-06 | テキサス インスツルメンツ インコ−ポレイテツド | Microwave device |
| JPS6372169A (en) * | 1983-08-31 | 1988-04-01 | テキサス インスツルメンツ インコ−ポレイテツド | Microwave device |
| JPH01503423A (en) * | 1987-05-14 | 1989-11-16 | ヒユーズ・エアクラフト・カンパニー | 2 terminal semiconductor diode device |
| JPH07326623A (en) * | 1994-09-09 | 1995-12-12 | Res Dev Corp Of Japan | Method for manufacturing GaAs semiconductor diode |
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