JPS51114875A - Semiconductor device manufacturing method - Google Patents

Semiconductor device manufacturing method

Info

Publication number
JPS51114875A
JPS51114875A JP50040130A JP4013075A JPS51114875A JP S51114875 A JPS51114875 A JP S51114875A JP 50040130 A JP50040130 A JP 50040130A JP 4013075 A JP4013075 A JP 4013075A JP S51114875 A JPS51114875 A JP S51114875A
Authority
JP
Japan
Prior art keywords
semiconductor device
device manufacturing
silicon dioxide
witstanding
ghdrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50040130A
Other languages
Japanese (ja)
Inventor
Kazuo Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50040130A priority Critical patent/JPS51114875A/en
Publication of JPS51114875A publication Critical patent/JPS51114875A/en
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: Voltage witstanding yield of mesa-type semiconductors is improved by removing silicon dioxide contaminated when structuring electrodes, with hydrofluoric acid solution and by forming a silicon dioxide with ghdrogen peroxide water.
COPYRIGHT: (C)1976,JPO&Japio
JP50040130A 1975-04-01 1975-04-01 Semiconductor device manufacturing method Pending JPS51114875A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50040130A JPS51114875A (en) 1975-04-01 1975-04-01 Semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50040130A JPS51114875A (en) 1975-04-01 1975-04-01 Semiconductor device manufacturing method

Publications (1)

Publication Number Publication Date
JPS51114875A true JPS51114875A (en) 1976-10-08

Family

ID=12572212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50040130A Pending JPS51114875A (en) 1975-04-01 1975-04-01 Semiconductor device manufacturing method

Country Status (1)

Country Link
JP (1) JPS51114875A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58146696U (en) * 1982-03-25 1983-10-03 アロン化成株式会社 Continuous cutting tool
WO1990013912A1 (en) * 1989-05-07 1990-11-15 Tadahiro Ohmi Silicon oxide film and semiconductor device having the same
WO1990013911A1 (en) * 1989-05-07 1990-11-15 Tadahiro Ohmi Method of forming oxide film
JP2594702B2 (en) * 1989-05-07 1997-03-26 忠弘 大見 Silicon oxide film and semiconductor device having the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58146696U (en) * 1982-03-25 1983-10-03 アロン化成株式会社 Continuous cutting tool
WO1990013912A1 (en) * 1989-05-07 1990-11-15 Tadahiro Ohmi Silicon oxide film and semiconductor device having the same
WO1990013911A1 (en) * 1989-05-07 1990-11-15 Tadahiro Ohmi Method of forming oxide film
US5360768A (en) * 1989-05-07 1994-11-01 Tadahiro Ohmi Method of forming oxide film
JP2594702B2 (en) * 1989-05-07 1997-03-26 忠弘 大見 Silicon oxide film and semiconductor device having the same

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