JPS51115780A - Hetero junction gate form fieid effect transistor and manufacturing me thod - Google Patents

Hetero junction gate form fieid effect transistor and manufacturing me thod

Info

Publication number
JPS51115780A
JPS51115780A JP49126233A JP12623374A JPS51115780A JP S51115780 A JPS51115780 A JP S51115780A JP 49126233 A JP49126233 A JP 49126233A JP 12623374 A JP12623374 A JP 12623374A JP S51115780 A JPS51115780 A JP S51115780A
Authority
JP
Japan
Prior art keywords
effect transistor
thod
manufacturing
hetero junction
junction gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP49126233A
Other languages
Japanese (ja)
Inventor
Shotaro Umebachi
Kunihiko Asahi
Morio Inoue
Kota Kano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP49126233A priority Critical patent/JPS51115780A/en
Publication of JPS51115780A publication Critical patent/JPS51115780A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: Method to manufacture a field effect transistor used hetero junction of Ga-Al-As and GaAs at the gate part.
COPYRIGHT: (C)1976,JPO&Japio
JP49126233A 1974-10-31 1974-10-31 Hetero junction gate form fieid effect transistor and manufacturing me thod Pending JPS51115780A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP49126233A JPS51115780A (en) 1974-10-31 1974-10-31 Hetero junction gate form fieid effect transistor and manufacturing me thod

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49126233A JPS51115780A (en) 1974-10-31 1974-10-31 Hetero junction gate form fieid effect transistor and manufacturing me thod

Publications (1)

Publication Number Publication Date
JPS51115780A true JPS51115780A (en) 1976-10-12

Family

ID=14930066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49126233A Pending JPS51115780A (en) 1974-10-31 1974-10-31 Hetero junction gate form fieid effect transistor and manufacturing me thod

Country Status (1)

Country Link
JP (1) JPS51115780A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5642378A (en) * 1979-09-14 1981-04-20 Fujitsu Ltd Manufacture of field effect semiconductor device
JPS6010785A (en) * 1983-06-30 1985-01-19 Fujitsu Ltd Field effect transistor and manufacture thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50157078A (en) * 1974-06-07 1975-12-18

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50157078A (en) * 1974-06-07 1975-12-18

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5642378A (en) * 1979-09-14 1981-04-20 Fujitsu Ltd Manufacture of field effect semiconductor device
JPS6010785A (en) * 1983-06-30 1985-01-19 Fujitsu Ltd Field effect transistor and manufacture thereof

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